Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256946
H. Klauk
Unlike thin-film transistors (TFTs) based on hydrogenated amorphous silicon, polycrystalline silicon or metal oxides, which typically require process temperatures above 150 °C, organic TFTs can often be fabricated at temperatures around 100 °C or below and thus not only on glass or certain high-temperature-compatible types of plastics, such as polyimide or polyethersulfone, but also on less expensive plastics, such as polyethylene naphthalate (PEN) and polyethylene terephthalate (PET), and even on paper, making organic TFTs potentially useful for flexible active-matrix displays, flexible sensor arrays, and flexible integrated circuits.
{"title":"Organic thin-film transistors for flexible displays and circuits","authors":"H. Klauk","doi":"10.1109/DRC.2012.6256946","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256946","url":null,"abstract":"Unlike thin-film transistors (TFTs) based on hydrogenated amorphous silicon, polycrystalline silicon or metal oxides, which typically require process temperatures above 150 °C, organic TFTs can often be fabricated at temperatures around 100 °C or below and thus not only on glass or certain high-temperature-compatible types of plastics, such as polyimide or polyethersulfone, but also on less expensive plastics, such as polyethylene naphthalate (PEN) and polyethylene terephthalate (PET), and even on paper, making organic TFTs potentially useful for flexible active-matrix displays, flexible sensor arrays, and flexible integrated circuits.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"28 1","pages":"237-238"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91517667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257033
An Chen, Z. Krivokapic, M. Lin
A crossbar array model with complete solutions for arbitrary memory and selector device behaviors (e.g., nonlinear, rectifying, etc.) is presented in this paper to analyze various array designs and device options. Voltage/current decay due to line resistance limits practical size of linear crossbar arrays below 10kbit. Less than 2% current reaches the end of a line in a small 1kbit array. Nonlinearity in memory characteristics and select diodes improve sensing margin from below 5% to above 30% in a 1kbit array. The voltage window between selected and unselected devices is increased from <;5%Vdd to >;20%Vdd by nonlinearity and >;40%Vdd by select diodes. This model provides quantitative evaluation for crossbar array designs and enables statistical analysis of array characteristics.
{"title":"A comprehensive model for crossbar memory arrays","authors":"An Chen, Z. Krivokapic, M. Lin","doi":"10.1109/DRC.2012.6257033","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257033","url":null,"abstract":"A crossbar array model with complete solutions for arbitrary memory and selector device behaviors (e.g., nonlinear, rectifying, etc.) is presented in this paper to analyze various array designs and device options. Voltage/current decay due to line resistance limits practical size of linear crossbar arrays below 10kbit. Less than 2% current reaches the end of a line in a small 1kbit array. Nonlinearity in memory characteristics and select diodes improve sensing margin from below 5% to above 30% in a 1kbit array. The voltage window between selected and unselected devices is increased from <;5%Vdd to >;20%Vdd by nonlinearity and >;40%Vdd by select diodes. This model provides quantitative evaluation for crossbar array designs and enables statistical analysis of array characteristics.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"55 1","pages":"219-220"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87137354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256936
T. Ha, P. Sonar, A. Dodabalapur
Since the first report that the use of regioregular conjugated polymer semiconductors results in significantly improved device performance in field-effect transistors (FETs), research into polymer FETs such as novel material development, fabrication processes optimization and device architectures employment has been focused [1-2]. One of such attempts is dual-gate configuration based polymer FETs. In a dual-gate device, the semiconductor active layer is sandwiched between two separate dielectrics and carrier concentration or the channel conductivity can be effectively controlled through the voltages applied independently to the top and bottom gate electrodes. Dual-gate devices have been investigated to obtain improved performance such as higher on-current, increased on-off current ratio and decreased threshold voltage [3-4].
{"title":"Understanding dual-gate polymer field-effect transistors","authors":"T. Ha, P. Sonar, A. Dodabalapur","doi":"10.1109/DRC.2012.6256936","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256936","url":null,"abstract":"Since the first report that the use of regioregular conjugated polymer semiconductors results in significantly improved device performance in field-effect transistors (FETs), research into polymer FETs such as novel material development, fabrication processes optimization and device architectures employment has been focused [1-2]. One of such attempts is dual-gate configuration based polymer FETs. In a dual-gate device, the semiconductor active layer is sandwiched between two separate dielectrics and carrier concentration or the channel conductivity can be effectively controlled through the voltages applied independently to the top and bottom gate electrodes. Dual-gate devices have been investigated to obtain improved performance such as higher on-current, increased on-off current ratio and decreased threshold voltage [3-4].","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"59 1","pages":"81-82"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90871320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256970
Wenjie Chen, Baile Chen, J. Yuan, A. Holmes, P. Fay
InP-based multiple quantum well (MQW) photodiodes in the InGaAs/GaAsSb material system are promising for mid-infrared detection [1]; by including strain in these devices, the detection wavelength has been extended to beyond 3 μm [2]. However, owing to the relative immaturity of these materials, there have been few reports of the characteristics of defects in this system and their impact on device performance, especially under strain and at material compositions appropriate for MQW detectors. In this work, In0.53Ga0.47As/GaAs0.5Sb0.5 (lattice-matched) and In0.34Ga0.66As/GaAs0.25Sb0.75 (strain-compensated) MQW photodiodes are evaluated using low-frequency noise spectroscopy (LFNS) and deep level transient spectroscopy (DLTS) to detect and extract the properties of defect levels, and their impact on dark current and noise performance of the photodiodes is evaluated.
{"title":"Characterization and impact of traps in lattice-matched and strain-compensated In1−xGaxAs/GaAs1−ySby multiple quantum well photodiodes","authors":"Wenjie Chen, Baile Chen, J. Yuan, A. Holmes, P. Fay","doi":"10.1109/DRC.2012.6256970","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256970","url":null,"abstract":"InP-based multiple quantum well (MQW) photodiodes in the InGaAs/GaAsSb material system are promising for mid-infrared detection [1]; by including strain in these devices, the detection wavelength has been extended to beyond 3 μm [2]. However, owing to the relative immaturity of these materials, there have been few reports of the characteristics of defects in this system and their impact on device performance, especially under strain and at material compositions appropriate for MQW detectors. In this work, In0.53Ga0.47As/GaAs0.5Sb0.5 (lattice-matched) and In0.34Ga0.66As/GaAs0.25Sb0.75 (strain-compensated) MQW photodiodes are evaluated using low-frequency noise spectroscopy (LFNS) and deep level transient spectroscopy (DLTS) to detect and extract the properties of defect levels, and their impact on dark current and noise performance of the photodiodes is evaluated.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"3 1","pages":"251-252"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90819571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257044
L. Czornomaz, M. El Kazzi, D. Caimi, C. Rossel, E. Uccelli, M. Sousa, C. Marchiori, M. Richter, H. Siegwart, J. Fompeyrine
We have demonstrated the first InGaAs MOSFETs with sub-nm EOT featuring a gate-first implant-free process compatible with VLSI. At LG = 65 nm, these devices are among the best reported ones in terms of electrostatic integrity but they suffer from a large access resistance related to a large gate-to-source/drain spacing. Future work will focus on scaling this spacing in the 5 nm range in order to achieve the desired on-performance.
{"title":"Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI","authors":"L. Czornomaz, M. El Kazzi, D. Caimi, C. Rossel, E. Uccelli, M. Sousa, C. Marchiori, M. Richter, H. Siegwart, J. Fompeyrine","doi":"10.1109/DRC.2012.6257044","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257044","url":null,"abstract":"We have demonstrated the first InGaAs MOSFETs with sub-nm EOT featuring a gate-first implant-free process compatible with VLSI. At LG = 65 nm, these devices are among the best reported ones in terms of electrostatic integrity but they suffer from a large access resistance related to a large gate-to-source/drain spacing. Future work will focus on scaling this spacing in the 5 nm range in order to achieve the desired on-performance.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"34 1","pages":"207-208"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77503578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257034
Ruiyi Chen, Suprem R. Das, Changwook Jeong, D. Janes, M. Alam
Single layer graphene (SLG), with high optical transparency and electrical conductivity, may potentially be used as flexible transparent electrode in photovoltaics, photo detectors, and flat panel displays. While its optical transmittance exceeds 95% (significantly better than most traditional materials), its sheet resistance (ρpoly-G) must be reduced below 10-20Ω/□ for viable replacement of present Transparent Conducting Oxides (TCOs) like Indium doped Tin Oxide (ITO). However, large scale CVD SLG is typically polycrystalline, consisting of many grains, with neighboring grains separated by high- and low-resistance grain boundaries (HGB and LGB), see Fig. 1 and 7. The HGBs severely limit the (percolating) electronic transport, so that ρpoly-G>; 1000Ω/□. It is therefore important to determine the electronic nature and fraction of HGB to improve transport in polycrystalline SLG.
{"title":"Exclusive electrical determination of high-resistance grain-boundaries in poly-graphene","authors":"Ruiyi Chen, Suprem R. Das, Changwook Jeong, D. Janes, M. Alam","doi":"10.1109/DRC.2012.6257034","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257034","url":null,"abstract":"Single layer graphene (SLG), with high optical transparency and electrical conductivity, may potentially be used as flexible transparent electrode in photovoltaics, photo detectors, and flat panel displays. While its optical transmittance exceeds 95% (significantly better than most traditional materials), its sheet resistance (ρpoly-G) must be reduced below 10-20Ω/□ for viable replacement of present Transparent Conducting Oxides (TCOs) like Indium doped Tin Oxide (ITO). However, large scale CVD SLG is typically polycrystalline, consisting of many grains, with neighboring grains separated by high- and low-resistance grain boundaries (HGB and LGB), see Fig. 1 and 7. The HGBs severely limit the (percolating) electronic transport, so that ρpoly-G>; 1000Ω/□. It is therefore important to determine the electronic nature and fraction of HGB to improve transport in polycrystalline SLG.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"57 1","pages":"57-58"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75347089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256926
S. Agarwal, E. Yablonovitch
In order to reduce the power consumption of modern electronics, the operating voltage needs to be significantly reduced. Tunneling field effect transistors (TFET's) have the potential to do this. As shown in figure, current can flow as soon as the conduction band and valence band overlap. However, the shape of the turn on is dependent on the density of states (DOS) of each band. The DOS can be controlled by changing the dimensionality of the device.
{"title":"Enhanced tunneling current in 1d-1dEdge overlapped TFET's","authors":"S. Agarwal, E. Yablonovitch","doi":"10.1109/DRC.2012.6256926","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256926","url":null,"abstract":"In order to reduce the power consumption of modern electronics, the operating voltage needs to be significantly reduced. Tunneling field effect transistors (TFET's) have the potential to do this. As shown in figure, current can flow as soon as the conduction band and valence band overlap. However, the shape of the turn on is dependent on the density of states (DOS) of each band. The DOS can be controlled by changing the dimensionality of the device.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"29 1","pages":"63-64"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74633365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256937
T. Ernst, J. Arcamone, J. Philippe, O. Martin, E. Ollier, P. Batude, V. Gouttenoire, C. Marcoux, F. Ricoul, C. Dupré, É. Colinet, O. Rozeau, G. Billiot, L. Duraffourg
In this paper, we will present some possible emerging applications for Nano-Electro-Mechanical Systems (NEMS) and the interest of their co-integration with CMOS. We will compare some integration schemes and present mass sensing as a possible emerging application. In particular, experimental results on complex gas measurements with NEMS will be introduced. We will show that multi-physics simulations and compact modelling of NEMS components (including chemical and physical effects) can be efficiently used in circuit simulations standard tools for such system optimization.
{"title":"High performance miniaturized NEMS sensors Toward co-integration with CMOS?","authors":"T. Ernst, J. Arcamone, J. Philippe, O. Martin, E. Ollier, P. Batude, V. Gouttenoire, C. Marcoux, F. Ricoul, C. Dupré, É. Colinet, O. Rozeau, G. Billiot, L. Duraffourg","doi":"10.1109/DRC.2012.6256937","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256937","url":null,"abstract":"In this paper, we will present some possible emerging applications for Nano-Electro-Mechanical Systems (NEMS) and the interest of their co-integration with CMOS. We will compare some integration schemes and present mass sensing as a possible emerging application. In particular, experimental results on complex gas measurements with NEMS will be introduced. We will show that multi-physics simulations and compact modelling of NEMS components (including chemical and physical effects) can be efficiently used in circuit simulations standard tools for such system optimization.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"14 1","pages":"15-16"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74766559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257017
A. Faraclas, N. Williams, G. Bakan, A. Gokirmak, H. Silva
Phase change memory (PCM) is a possible competitor for future generation non-volatile storage class memory due to its fast writing speed and aggressively scaled packing density. In PCM cells current is confined through narrow conductive paths to create high current densities in a chalcogenide material (Ge2Sb2Te5 or GST is most commonly used). The resulting heat allows the material to switch between crystalline (set) and amorphous (reset) states, changing the cell's resistance by ~10-104 times depending on the cell dimensions. Less energy is required for melting smaller regions, therefore aggressive cell scaling results in reduced power and increased packing density. The properties of GST change by orders of magnitude as a function of temperature, and thus understanding its thermal dependency is crucial to accurately model phase change memory cell operation.
{"title":"Comparison of instantaneous crystallization and metastable models in phase change memory cells","authors":"A. Faraclas, N. Williams, G. Bakan, A. Gokirmak, H. Silva","doi":"10.1109/DRC.2012.6257017","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257017","url":null,"abstract":"Phase change memory (PCM) is a possible competitor for future generation non-volatile storage class memory due to its fast writing speed and aggressively scaled packing density. In PCM cells current is confined through narrow conductive paths to create high current densities in a chalcogenide material (Ge2Sb2Te5 or GST is most commonly used). The resulting heat allows the material to switch between crystalline (set) and amorphous (reset) states, changing the cell's resistance by ~10-104 times depending on the cell dimensions. Less energy is required for melting smaller regions, therefore aggressive cell scaling results in reduced power and increased packing density. The properties of GST change by orders of magnitude as a function of temperature, and thus understanding its thermal dependency is crucial to accurately model phase change memory cell operation.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"583 1","pages":"145-146"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76587838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256950
D. Sarkar, K. Banerjee
Electrical detection of biomolecules using Field-Effect-Transistors (FETs) [1-5] is very attractive, since it is label-free, inexpensive, allows scalability and on-chip integration of both sensor and measurement systems. Nanostructured FETs, especially nanowires have gained special importance due to their high electrostatic control and large surface-to-volume ratio. In order to configure the FET as a biosensor (Fig. 1(a)), the dielectric/oxide layer on the semiconductor is functionalized with specific receptors. These receptors capture the desired target biomolecules (a process called conjugation), which due to their charge produce gating effect on the semiconductor, thus changing its electrical properties such as current, conductance etc. Thus it is intuitive, that greater the response of the FET to the gating effect, higher will be its sensitivity where sensitivity can be defined as the ratio of change in current due to biomolecule conjugation to the initial current (before conjugation). While the highest response to gating effect can be obtained in the subthreshold region, the conventional FETs (CFET) suffer severely due to the theoretical limitation on the minimum achievable Subthreshold Swing (SS) of [KBT/q ln(10)] due to the Boltzmann tyranny (Fig. 1(b)) effect where KB is the Boltzmann constant and T is the temperature. This also poses fundamental limitations on the sensitivity and response time of CFET based biosensors [6]. In recent times, Tunnel- FETs have attracted a lot of attention for low power digital applications [7]-[17], due to their ability to overcome the fundamental limitation in SS (60 mV/decade) of CFETs. Recently, it has been shown that the superior subthreshold behavior of TFETs can be leveraged to achieve highly efficient biosensors [6]. This is possible, thanks to the fundamentally different current injection mechanism in TFETs in the form of band-to-band tunneling [17]. The working principle of TFET biosensors is illustrated in Fig. 1c.
{"title":"Fundamental limitations of conventional-FET biosensors: Quantum-mechanical-tunneling to the rescue","authors":"D. Sarkar, K. Banerjee","doi":"10.1109/DRC.2012.6256950","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256950","url":null,"abstract":"Electrical detection of biomolecules using Field-Effect-Transistors (FETs) [1-5] is very attractive, since it is label-free, inexpensive, allows scalability and on-chip integration of both sensor and measurement systems. Nanostructured FETs, especially nanowires have gained special importance due to their high electrostatic control and large surface-to-volume ratio. In order to configure the FET as a biosensor (Fig. 1(a)), the dielectric/oxide layer on the semiconductor is functionalized with specific receptors. These receptors capture the desired target biomolecules (a process called conjugation), which due to their charge produce gating effect on the semiconductor, thus changing its electrical properties such as current, conductance etc. Thus it is intuitive, that greater the response of the FET to the gating effect, higher will be its sensitivity where sensitivity can be defined as the ratio of change in current due to biomolecule conjugation to the initial current (before conjugation). While the highest response to gating effect can be obtained in the subthreshold region, the conventional FETs (CFET) suffer severely due to the theoretical limitation on the minimum achievable Subthreshold Swing (SS) of [KBT/q ln(10)] due to the Boltzmann tyranny (Fig. 1(b)) effect where KB is the Boltzmann constant and T is the temperature. This also poses fundamental limitations on the sensitivity and response time of CFET based biosensors [6]. In recent times, Tunnel- FETs have attracted a lot of attention for low power digital applications [7]-[17], due to their ability to overcome the fundamental limitation in SS (60 mV/decade) of CFETs. Recently, it has been shown that the superior subthreshold behavior of TFETs can be leveraged to achieve highly efficient biosensors [6]. This is possible, thanks to the fundamentally different current injection mechanism in TFETs in the form of band-to-band tunneling [17]. The working principle of TFET biosensors is illustrated in Fig. 1c.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"32 1","pages":"83-84"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76897297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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