Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257011
F. Xiong, M. Bae, Yuan Dai, A. Liao, A. Behnam, E. Carrion, Sungduk Hong, D. Ielmini, E. Pop
Phase change material (PCM) nanowires (NWs) that are self-aligned with carbon nanotube (CNT) electrodes that achieves a switching currents of the order ~1 μA, over two orders of magnitude below industrial state of the art, is described. The programming currents, ~0.1 μA SET, ~1.6 μA RESET, and power dissipation of the fabricated self-aligned PCM NW devices are among the lowest reported to date. The nanopatterning method used can be applied to probe other nanomaterials by automatically aligning them with CNT electrodes.
{"title":"Nanowire phase change memory with carbon nanotube electrodes","authors":"F. Xiong, M. Bae, Yuan Dai, A. Liao, A. Behnam, E. Carrion, Sungduk Hong, D. Ielmini, E. Pop","doi":"10.1109/DRC.2012.6257011","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257011","url":null,"abstract":"Phase change material (PCM) nanowires (NWs) that are self-aligned with carbon nanotube (CNT) electrodes that achieves a switching currents of the order ~1 μA, over two orders of magnitude below industrial state of the art, is described. The programming currents, ~0.1 μA SET, ~1.6 μA RESET, and power dissipation of the fabricated self-aligned PCM NW devices are among the lowest reported to date. The nanopatterning method used can be applied to probe other nanomaterials by automatically aligning them with CNT electrodes.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"46 1","pages":"215-216"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81402925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256978
Lieh-Ting Tung, M. V. Mateus, E. Kan
Independently-driven tri-gate graphene nanoribbon transistors were implemented by CMOS-compatible double-self-aligned spacer lithography, which effectively suppresses the line edge roughness and width variation. The consistent electrical characteristics show bandgap modulation with transverse electrical fields and ambipolar conduction with perpendicular fields in graphene film.
{"title":"Transverse-field bandgap modulation on graphene nanoribbon transistors by double-self-aligned spacers","authors":"Lieh-Ting Tung, M. V. Mateus, E. Kan","doi":"10.1109/DRC.2012.6256978","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256978","url":null,"abstract":"Independently-driven tri-gate graphene nanoribbon transistors were implemented by CMOS-compatible double-self-aligned spacer lithography, which effectively suppresses the line edge roughness and width variation. The consistent electrical characteristics show bandgap modulation with transverse electrical fields and ambipolar conduction with perpendicular fields in graphene film.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"6 1","pages":"113-114"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79117825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257024
Feng Pan, Jaewon Jang, V. Subramanian
We demonstrate an excellent Resistive Random Access Memory (RRAM) device based on Yttria Stabilized Zirconia (YSZ). Robust multilevel operation is achieved using incremental step pulse programming. Using this scheme, we realize excellent reliability, and further, demonstrate that oxygen vacancy-based cells are superior to metallic filament cells for multilevel operation.
{"title":"A very reliable multilevel YSZ resistive switching memory","authors":"Feng Pan, Jaewon Jang, V. Subramanian","doi":"10.1109/DRC.2012.6257024","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257024","url":null,"abstract":"We demonstrate an excellent Resistive Random Access Memory (RRAM) device based on Yttria Stabilized Zirconia (YSZ). Robust multilevel operation is achieved using incremental step pulse programming. Using this scheme, we realize excellent reliability, and further, demonstrate that oxygen vacancy-based cells are superior to metallic filament cells for multilevel operation.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"1 1","pages":"217-218"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76266871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257018
R. Jana, D. Jena
This paper introduce a method for incorporating polarization sheet charges into compact modeling in transistors. The Poisson equation is solved directly with a Dirac-delta function sheet charge at the heterojunction to obtain an analytical equation for the surface potential. This surface potential is then used to calculate the HEMT characteristics. Thus, the results of this work for the first time make an explicit connection between the material properties of the HEMT heterostructure with a surface potential based compact model through the polarization sheet charge. Furthermore, the authors have extended the intrinsic model by including field-dependent mobility and velocity saturation. The developed model should prove helpful in designing of devices and circuits.
{"title":"A surface-potential based compact model for GaN HEMTs incorporating polarization charges","authors":"R. Jana, D. Jena","doi":"10.1109/DRC.2012.6257018","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257018","url":null,"abstract":"This paper introduce a method for incorporating polarization sheet charges into compact modeling in transistors. The Poisson equation is solved directly with a Dirac-delta function sheet charge at the heterojunction to obtain an analytical equation for the surface potential. This surface potential is then used to calculate the HEMT characteristics. Thus, the results of this work for the first time make an explicit connection between the material properties of the HEMT heterostructure with a surface potential based compact model through the polarization sheet charge. Furthermore, the authors have extended the intrinsic model by including field-dependent mobility and velocity saturation. The developed model should prove helpful in designing of devices and circuits.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"22 1","pages":"147-148"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79829670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257000
K. Auluck, S. Rajwade, E. Kan
A statistical model is proposed for ferroelectric (FE) polarization switching response during program and retention in FE-charge hybrid nonvolatile memory. During the program pulse, high fields first occur in the FE layer and then transfer to tunnel oxide after FE polarization, which leads to a two-step process: (a) rapid domain switching (~1ns - 100ns) and (b) electron injection into the floating gate (~10μs - 1ms). This device can be potentially used as a dual-mode memory with a fast low-retention mode (DRAM), and a slower high-retention mode (Flash).
{"title":"Switching dynamics in ferroelectric-charge hybrid nonvolatile memory","authors":"K. Auluck, S. Rajwade, E. Kan","doi":"10.1109/DRC.2012.6257000","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257000","url":null,"abstract":"A statistical model is proposed for ferroelectric (FE) polarization switching response during program and retention in FE-charge hybrid nonvolatile memory. During the program pulse, high fields first occur in the FE layer and then transfer to tunnel oxide after FE polarization, which leads to a two-step process: (a) rapid domain switching (~1ns - 100ns) and (b) electron injection into the floating gate (~10μs - 1ms). This device can be potentially used as a dual-mode memory with a fast low-retention mode (DRAM), and a slower high-retention mode (Flash).","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"298 1","pages":"133-134"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91456299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256947
J. Verma, Prem Kumar Kandaswamy, V. Protasenko, A. Verma, H. Xing, D. Jena
In this work, the authors report on electroluminescence from 8 period self-assembled GaN QDs embedded in AIN barriers grown by plasma assisted molecular beam epitaxy (PAMBE), in SK growth mode, on commercially available AlN/sapphire templates.
{"title":"Tunnel injection GaN/AlN quantum dot UV LED","authors":"J. Verma, Prem Kumar Kandaswamy, V. Protasenko, A. Verma, H. Xing, D. Jena","doi":"10.1109/DRC.2012.6256947","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256947","url":null,"abstract":"In this work, the authors report on electroluminescence from 8 period self-assembled GaN QDs embedded in AIN barriers grown by plasma assisted molecular beam epitaxy (PAMBE), in SK growth mode, on commercially available AlN/sapphire templates.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"74 1","pages":"249-250"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90813352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257039
M. Sharad, G. Panagopoulos, K. Roy
We propose a device model for neuron based on lateral spin valve (LSV) that constitutes of multiple input magnets, connected to an output magnet, using metal channels. The low-resistance, magneto-metallic neuron can operate at a small terminal voltage of ~20mV, while performing computation upon current-mode inputs. The spin-based neurons can be integrated with CMOS to realize ultra low-power data processing hardware, based on neural networks (NN), for different classes of applications like, cognitive computing, programmable Boolean/non-Boolean logic and analog and digital signal processing [1, 2]. In this work we present analog image acquisition and processing as an example. Results based on device-circuit co-simulation framework show that a spin-CMOS hybrid design, employing the proposed neuron, can achieve ~100x lower energy consumption per computation-frame, as compared to the state of art CMOS designs employing conventional analog circuits [13].
{"title":"Spin neuron for ultra low power computational hardware","authors":"M. Sharad, G. Panagopoulos, K. Roy","doi":"10.1109/DRC.2012.6257039","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257039","url":null,"abstract":"We propose a device model for neuron based on lateral spin valve (LSV) that constitutes of multiple input magnets, connected to an output magnet, using metal channels. The low-resistance, magneto-metallic neuron can operate at a small terminal voltage of ~20mV, while performing computation upon current-mode inputs. The spin-based neurons can be integrated with CMOS to realize ultra low-power data processing hardware, based on neural networks (NN), for different classes of applications like, cognitive computing, programmable Boolean/non-Boolean logic and analog and digital signal processing [1, 2]. In this work we present analog image acquisition and processing as an example. Results based on device-circuit co-simulation framework show that a spin-CMOS hybrid design, employing the proposed neuron, can achieve ~100x lower energy consumption per computation-frame, as compared to the state of art CMOS designs employing conventional analog circuits [13].","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"9 1","pages":"221-222"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84369773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257007
S. Krishnamoorthy, F. Akyol, Jing Yang, P. Park, R. Myers, S. Rajan
We report on the design, fabrication, and characterization of record high efficiency inter-band tunnel junctions in GaN. We have achieved tunnel junction specific resistivity values as low as 3×10-4 Ωcm2 by using polarization engineered GaN/InGaN/GaN tunnel junctions. An alternate approach of using rare earth nitride (GdN) nano-islands embedded in degenerately doped GaN p n junction has resulted in tunnel junction specific resistivity of 2.7×10-3 Ωcm2. This is the first report of mid gap states assisted tunneling in GaN.
我们报道了氮化镓中创纪录高效率带间隧道结的设计、制造和表征。通过使用极化工程GaN/InGaN/GaN隧道结，我们已经实现了低至3×10-4 Ωcm2的隧道结比电阻率值。利用稀土氮化物(GdN)纳米岛嵌入简并掺杂GaN p n结的另一种方法导致隧道结的比电阻率为2.7×10-3 Ωcm2。这是氮化镓中隙态辅助隧穿的首次报道。
{"title":"Record low tunnel junction specific resistivity (< 3×10−4 Ωcm2) in GaN inter-band tunnel junctions","authors":"S. Krishnamoorthy, F. Akyol, Jing Yang, P. Park, R. Myers, S. Rajan","doi":"10.1109/DRC.2012.6257007","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257007","url":null,"abstract":"We report on the design, fabrication, and characterization of record high efficiency inter-band tunnel junctions in GaN. We have achieved tunnel junction specific resistivity values as low as 3×10<sup>-4</sup> Ωcm<sup>2</sup> by using polarization engineered GaN/InGaN/GaN tunnel junctions. An alternate approach of using rare earth nitride (GdN) nano-islands embedded in degenerately doped GaN p n junction has resulted in tunnel junction specific resistivity of 2.7×10<sup>-3</sup> Ωcm<sup>2</sup>. This is the first report of mid gap states assisted tunneling in GaN.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"4 1","pages":"157-158"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84455368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256956
S. Famenini, C. Fonstad
We report the first demonstration of in-plane InGaAs/InP laser diodes integrated with SiON waveguides on silicon substrates using a modular recess-integration technique. This technique allows for pre-testing and selection of devices before integration, is compatible with integration on full CMOS wafers after conventional back-end processing is completed, and can be used to integrate multiple types of devices on a single wafer [1]. We feel it is superior to other optoelectronic integration techniques; more broadly, it is ideally suited to realizing robust, planar, monolithically integrated micro-systems incorporating a variety of materials and devices.
{"title":"Recess integration of platelet laser diodes with waveguides on silicon","authors":"S. Famenini, C. Fonstad","doi":"10.1109/DRC.2012.6256956","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256956","url":null,"abstract":"We report the first demonstration of in-plane InGaAs/InP laser diodes integrated with SiON waveguides on silicon substrates using a modular recess-integration technique. This technique allows for pre-testing and selection of devices before integration, is compatible with integration on full CMOS wafers after conventional back-end processing is completed, and can be used to integrate multiple types of devices on a single wafer [1]. We feel it is superior to other optoelectronic integration techniques; more broadly, it is ideally suited to realizing robust, planar, monolithically integrated micro-systems incorporating a variety of materials and devices.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"47 1","pages":"95-96"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79510793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257016
Taehoon Kim, J. Byun, Hyunsoo Song, Yongtaek Hong
Stretchable electronics is one of the most attractive research areas for next-generation electronics application, where most parts of devices need to show stable and good mechanical properties under flexible and bendable deformation conditions. [n order to implement stretchable electrodes, "soft metal" such as gold, silver, and copper has been widely used, but they showed relatively poor mechanical properties, especially in highly stretched cases. Therefore, metallic carbon nano tube (CNT) based materials have been considered the most adequate candidate in such conditions due to their excellent mechanical properties. In addition, relative easiness of controlling sensitivity of resistance change with applied strain is another advantage of the CNT based materials because their characteristics can be changed by various chemical treatment and structural changes. When the sensitivity is controlled to be large, the CNT films can be used as strain sensors.
{"title":"Inkjet-printed SWCNT films for stretchable electrode and strain sensor applications","authors":"Taehoon Kim, J. Byun, Hyunsoo Song, Yongtaek Hong","doi":"10.1109/DRC.2012.6257016","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257016","url":null,"abstract":"Stretchable electronics is one of the most attractive research areas for next-generation electronics application, where most parts of devices need to show stable and good mechanical properties under flexible and bendable deformation conditions. [n order to implement stretchable electrodes, \"soft metal\" such as gold, silver, and copper has been widely used, but they showed relatively poor mechanical properties, especially in highly stretched cases. Therefore, metallic carbon nano tube (CNT) based materials have been considered the most adequate candidate in such conditions due to their excellent mechanical properties. In addition, relative easiness of controlling sensitivity of resistance change with applied strain is another advantage of the CNT based materials because their characteristics can be changed by various chemical treatment and structural changes. When the sensitivity is controlled to be large, the CNT films can be used as strain sensors.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"69 1","pages":"143-144"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86082612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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