Pub Date : 2021-06-20DOI: 10.1109/Transducers50396.2021.9495654
T. Fujii
A Droplet Microfluidic Platform is developed for massively-parallel tests to draw feature maps of molecular computation with several ten thousands of different reaction conditions. This enables precise tuning and design of molecular systems to be used for specific applications. Two types of applications based on “PEN DNA Toolbox” developed inn our group, molecular-based cancer diagnostics and stimuli-responsive DNA hydrogels, are presented in this talk.
{"title":"Drawing Feature Maps of Molecular Computation","authors":"T. Fujii","doi":"10.1109/Transducers50396.2021.9495654","DOIUrl":"https://doi.org/10.1109/Transducers50396.2021.9495654","url":null,"abstract":"A Droplet Microfluidic Platform is developed for massively-parallel tests to draw feature maps of molecular computation with several ten thousands of different reaction conditions. This enables precise tuning and design of molecular systems to be used for specific applications. Two types of applications based on “PEN DNA Toolbox” developed inn our group, molecular-based cancer diagnostics and stimuli-responsive DNA hydrogels, are presented in this talk.","PeriodicalId":6814,"journal":{"name":"2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)","volume":"46 1","pages":"300-300"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88706896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/Transducers50396.2021.9495750
Jesus Yanez, A. Uranga, N. Barniol
Here we present a longitudinal bulk-acoustic-wave microsensor using the pulse-echo mode of operation to identify presence of liquid in microchannels by its compressional properties, with the particularity of sub-I-volt and multi-frequency operation in the 1 - 10 GHz range. The effect produced by the configuration of layers and materials constituting these bulk acoustic transducers was studied analytically and by FEM simulations, finding multiple transduction peaks throughout the operating range of the 0.5 µm AlN film (fr = 10.9 GHz). The expected peaks for the 1 - 2 GHz range were verified experimentally by feeding the transducers with short RF pulses of 5 dBm, achieving SNR up to 27 dB. Since the detection surface lacks electronics or wires, this device can be used to detect both conductive and non-conductive liquid in real time applications.
{"title":"Multi-Frequency Thin Film HBAR Microsensor for Acoustic Impedance Sensing Over the GHz Range","authors":"Jesus Yanez, A. Uranga, N. Barniol","doi":"10.1109/Transducers50396.2021.9495750","DOIUrl":"https://doi.org/10.1109/Transducers50396.2021.9495750","url":null,"abstract":"Here we present a longitudinal bulk-acoustic-wave microsensor using the pulse-echo mode of operation to identify presence of liquid in microchannels by its compressional properties, with the particularity of sub-I-volt and multi-frequency operation in the 1 - 10 GHz range. The effect produced by the configuration of layers and materials constituting these bulk acoustic transducers was studied analytically and by FEM simulations, finding multiple transduction peaks throughout the operating range of the 0.5 µm AlN film (fr = 10.9 GHz). The expected peaks for the 1 - 2 GHz range were verified experimentally by feeding the transducers with short RF pulses of 5 dBm, achieving SNR up to 27 dB. Since the detection surface lacks electronics or wires, this device can be used to detect both conductive and non-conductive liquid in real time applications.","PeriodicalId":6814,"journal":{"name":"2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)","volume":"3 1","pages":"1347-1350"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89155567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/Transducers50396.2021.9495496
Vedant Sumaria, S. Tadigadapa
We present sub-picometer displacement measurement using a high quality-factor (Q) whispering gallery mode (WGM) borosilicate glass microspherical resonators. Calibrating the expansion of the WGM resonator using a laser Doppler vibrometer (LDV) upon absorption of thermal radiation, 3.7 pm of dimensional change can be experimentally resolved using a 1 mm diameter and $8.4 mu mathrm{m}$ thick glass microspherical shell resonator. COMSOL models presented show that an unprecedented displacement resolution of 89 fm is possible for a microspherical shell resonator with a diameter of 2 mm and a thickness of $2 mu mathrm{m}$.
我们提出了使用高质量因子(Q)耳语通道模式(WGM)硼硅玻璃微球谐振器进行亚皮米位移测量。利用激光多普勒振动计(LDV)校准WGM谐振器在吸收热辐射时的膨胀，使用直径为1 mm、厚度为8.4 mu mathrm{m}$的玻璃微球壳谐振器可以实验分辨3.7 pm的尺寸变化。所提出的COMSOL模型表明，对于直径为2mm，厚度为$2 mu mathm {m}$的微球壳谐振器，可以实现前所未有的89 fm的位移分辨率。
{"title":"Picometer Level Dimensional Sensing Using Microspherical Glass Shell Whispering Gallery Mode Resonators","authors":"Vedant Sumaria, S. Tadigadapa","doi":"10.1109/Transducers50396.2021.9495496","DOIUrl":"https://doi.org/10.1109/Transducers50396.2021.9495496","url":null,"abstract":"We present sub-picometer displacement measurement using a high quality-factor (Q) whispering gallery mode (WGM) borosilicate glass microspherical resonators. Calibrating the expansion of the WGM resonator using a laser Doppler vibrometer (LDV) upon absorption of thermal radiation, 3.7 pm of dimensional change can be experimentally resolved using a 1 mm diameter and $8.4 mu mathrm{m}$ thick glass microspherical shell resonator. COMSOL models presented show that an unprecedented displacement resolution of 89 fm is possible for a microspherical shell resonator with a diameter of 2 mm and a thickness of $2 mu mathrm{m}$.","PeriodicalId":6814,"journal":{"name":"2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)","volume":"36 1","pages":"1104-1107"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88891246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/Transducers50396.2021.9495432
M. Ghatge, M. Rais-Zadeh, R. Tabrizian
This paper reports on a high quality factor ($Q$) gallium nitride (GaN) thickness-shear (TS) bulk acoustic wave resonator with a reduced temperature coefficient of frequency (TCF). $4.2mu mathrm{m}$-thick AlGaN/GaN-on-Si substrate is used to create high-Q resonators operating in TS mode, as well as high-order width-extensional modes (WEn). The temperature characteristic of TS and WE resonators are measured and compared highlighting the considerable reduction in TCF of the shear mode. GaN resonator prototypes are presented operating in TS mode at 573MHz, with a $Q$ of 2700, and in WE3, WE5, and WE7 modes at 239MHz, 407MHz, and 564MHz, with $Qmathrm{s}$ of 8700, 7200 and 2300, respectively. A TCF of-17.9 ppm/°C is measured for the TS mode, which is significantly lower compared to WE3,5,7 modes with measured TCF of $-24 text{ppm}/^{circ}mathrm{C}pm 0.3 text{ppm}/^{circ}mathrm{C}$. The large (> 6 ppm/°C) improvement in temperature sensitivity, along with the promise of monolithic integration with HEMT electronics highlights the potential of TS GaN resonators for realization of frequency stable and radiation hard integrated oscillators.
{"title":"High-$Q$ Gallium Nitride Thickness-Shear Baw Resonators with Reduced Temperature Sensitivty","authors":"M. Ghatge, M. Rais-Zadeh, R. Tabrizian","doi":"10.1109/Transducers50396.2021.9495432","DOIUrl":"https://doi.org/10.1109/Transducers50396.2021.9495432","url":null,"abstract":"This paper reports on a high quality factor ($Q$) gallium nitride (GaN) thickness-shear (TS) bulk acoustic wave resonator with a reduced temperature coefficient of frequency (TCF). $4.2mu mathrm{m}$-thick AlGaN/GaN-on-Si substrate is used to create high-Q resonators operating in TS mode, as well as high-order width-extensional modes (WEn). The temperature characteristic of TS and WE resonators are measured and compared highlighting the considerable reduction in TCF of the shear mode. GaN resonator prototypes are presented operating in TS mode at 573MHz, with a $Q$ of 2700, and in WE3, WE5, and WE7 modes at 239MHz, 407MHz, and 564MHz, with $Qmathrm{s}$ of 8700, 7200 and 2300, respectively. A TCF of-17.9 ppm/°C is measured for the TS mode, which is significantly lower compared to WE3,5,7 modes with measured TCF of $-24 text{ppm}/^{circ}mathrm{C}pm 0.3 text{ppm}/^{circ}mathrm{C}$. The large (> 6 ppm/°C) improvement in temperature sensitivity, along with the promise of monolithic integration with HEMT electronics highlights the potential of TS GaN resonators for realization of frequency stable and radiation hard integrated oscillators.","PeriodicalId":6814,"journal":{"name":"2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)","volume":"97 1","pages":"1400-1403"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76012976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/Transducers50396.2021.9495687
A. Sucich, Danny Kim, C. Roper
This paper presents the reversible actuation of alkali vapor pressure using devices based on the solid electrolyte beta”-alumina. We demonstrate electrical actuation that gives a dynamic range of 20X in the alkali vapor density in 1 s, which is a IOX improvement over prior work. This is achieved through a combination of low alkali adsorption energy cell-wall coatings, finer sub-micron pitch electrodes, and elevated device operation temperature. This is an enabling component technology for compact atomic clocks and sensors.
{"title":"Atomic Vapor Actuators","authors":"A. Sucich, Danny Kim, C. Roper","doi":"10.1109/Transducers50396.2021.9495687","DOIUrl":"https://doi.org/10.1109/Transducers50396.2021.9495687","url":null,"abstract":"This paper presents the reversible actuation of alkali vapor pressure using devices based on the solid electrolyte beta”-alumina. We demonstrate electrical actuation that gives a dynamic range of 20X in the alkali vapor density in 1 s, which is a IOX improvement over prior work. This is achieved through a combination of low alkali adsorption energy cell-wall coatings, finer sub-micron pitch electrodes, and elevated device operation temperature. This is an enabling component technology for compact atomic clocks and sensors.","PeriodicalId":6814,"journal":{"name":"2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)","volume":"2018 1","pages":"1108-1109"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76022020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/Transducers50396.2021.9495697
Renhua Yang, Jingui Qian, Joshua E.-Y. Lee
We demonstrate the boosting of quality factor (Q) of a <100> aligned Aluminum Nitride (AlN) on Silicon (Si) laterally vibrating resonator (LVR) by using wide acoustic bandgap (ABG) phononic crystal (PnC) anchors. To date, Q-boosting strategies have been studied predominantly for the common <110> orientation. Given the anisotropy of Si, changing orientation could notably affect the effectiveness of Q-boosting strategies. We show experimentally that Qs of <100> aligned LVRs more than doubled to 10000 with the PnC anchors. To further corroborate the effectiveness of the PnCs, we also incorporated the PnCs into delay lines with wave propagation along the <100> axis, showing that the PnCs provide large acoustic attenuation of 45 dB.
{"title":"Boosting Q of <100> Aligned ALN-on-Silicon Laterally Vibrating Resonators by Wide Acoustic Bandgap Phononic Crystal Anchors","authors":"Renhua Yang, Jingui Qian, Joshua E.-Y. Lee","doi":"10.1109/Transducers50396.2021.9495697","DOIUrl":"https://doi.org/10.1109/Transducers50396.2021.9495697","url":null,"abstract":"We demonstrate the boosting of quality factor (Q) of a <100> aligned Aluminum Nitride (AlN) on Silicon (Si) laterally vibrating resonator (LVR) by using wide acoustic bandgap (ABG) phononic crystal (PnC) anchors. To date, Q-boosting strategies have been studied predominantly for the common <110> orientation. Given the anisotropy of Si, changing orientation could notably affect the effectiveness of Q-boosting strategies. We show experimentally that Qs of <100> aligned LVRs more than doubled to 10000 with the PnC anchors. To further corroborate the effectiveness of the PnCs, we also incorporated the PnCs into delay lines with wave propagation along the <100> axis, showing that the PnCs provide large acoustic attenuation of 45 dB.","PeriodicalId":6814,"journal":{"name":"2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)","volume":"67 1","pages":"1375-1378"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78992016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/Transducers50396.2021.9495566
Chi-Fu Huang, Ray-Tung Chiang, Yu-Ting Cheng
This paper presents a new manufacturing technology, i.e., combined spin coating and lift-off process (CSLOP), for the fabrication of Ag interconnects and microstructures such as interconnect lines, interdigitated capacitors and spiral inductors with a high aspect ratio of thickness vs. width. For the interconnect fabrication using the thin film CSLOP, Ag lines with a width range from 10 to $100 mu mathrm{m}$ can be realized with an electrical resistivity of $sim 2.36 muOmegacdot text{cm}$, only 1.48 times higher than that of bulk silver ($1.59 muOmegacdot text{cm}$), which is the lowest resistive Ag line ever reported. For high performance on-chip flexible passive fabrication using the thick film CSLOP, the interdigitated capacitors with an electrode thickness of $70 mu mathrm{m}$ can exhibit a capacitance of 0.502pF@10 kHz and the 5-turn, $70 mu mathrm{m}$ thick spiral inductor can have high $Q$ performance with a highest inductance density up to 9.7 nH/mm2. Because the process scheme can be applied using other metal/metal oxide nanoparticles, the CSLOP can facilitate the realization of highly sensitive sensors and excellent heterogeneous integration for IOT applications.
本文提出了一种新的制造技术，即复合自旋镀膜和升离工艺(CSLOP)，用于制造具有高宽厚比的银互连线和微结构，如互连线、交叉电容和螺旋电感。对于使用薄膜CSLOP的互连制造，可以实现宽度从10到$100 mu mathrm{m}$的银线，其电阻率为$sim 2.36 muOmegacdot text{cm}$，仅比体银($1.59 muOmegacdot text{cm}$)高1.48倍，这是迄今为止报道的最低电阻银线。对于使用厚膜CSLOP的高性能片上柔性无源制造，电极厚度为$70 mu mathrm{m}$的交叉电容具有0.502pF@10 kHz的电容，5匝$70 mu mathrm{m}$厚螺旋电感具有较高的$Q$性能，最高电感密度可达9.7 nH/mm2。由于该工艺方案可以应用于其他金属/金属氧化物纳米颗粒，因此CSLOP可以促进实现高灵敏度传感器和物联网应用的出色异构集成。
{"title":"A Combined Spin Coating and Lift-Off Process (CSLOP) to Realize Thick Silver Microstructures with a High Aspect Ratio for IoT Applications","authors":"Chi-Fu Huang, Ray-Tung Chiang, Yu-Ting Cheng","doi":"10.1109/Transducers50396.2021.9495566","DOIUrl":"https://doi.org/10.1109/Transducers50396.2021.9495566","url":null,"abstract":"This paper presents a new manufacturing technology, i.e., combined spin coating and lift-off process (CSLOP), for the fabrication of Ag interconnects and microstructures such as interconnect lines, interdigitated capacitors and spiral inductors with a high aspect ratio of thickness vs. width. For the interconnect fabrication using the thin film CSLOP, Ag lines with a width range from 10 to $100 mu mathrm{m}$ can be realized with an electrical resistivity of $sim 2.36 muOmegacdot text{cm}$, only 1.48 times higher than that of bulk silver ($1.59 muOmegacdot text{cm}$), which is the lowest resistive Ag line ever reported. For high performance on-chip flexible passive fabrication using the thick film CSLOP, the interdigitated capacitors with an electrode thickness of $70 mu mathrm{m}$ can exhibit a capacitance of 0.502pF@10 kHz and the 5-turn, $70 mu mathrm{m}$ thick spiral inductor can have high $Q$ performance with a highest inductance density up to 9.7 nH/mm2. Because the process scheme can be applied using other metal/metal oxide nanoparticles, the CSLOP can facilitate the realization of highly sensitive sensors and excellent heterogeneous integration for IOT applications.","PeriodicalId":6814,"journal":{"name":"2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)","volume":"1 1","pages":"1122-1125"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79188201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/Transducers50396.2021.9495401
Huahuang Luo, Jose Cabot, Xiaoyi Wang, Mingzheng Duan, Yi-Kuen Lee
In this paper, we present a systematic study of the PWM frequency ($f_{text{PWM}}$) effect on the sensitivity of a thermal expansion-based angular motion (TEAM) sensor. An optimal $f_{text{PWM}}$ of heaters was experimentally derived for each pair of temperature detectors to achieve the optimized sensitivity. Based on the time-dependent analysis of our $2mathrm{D}$ PDE model and experiments, a semi-empirical formula has been proposed to relate the optimal $f_{text{PWM}}, (f_{mathrm{o}})$ with the thermal time constant ($tau^{ast}$). Moreover, a generalized ‘Phase Diagram’ of the TEAM sensor's normalized sensitivity ($S^{ast}$) was presented, for the first time, as a function of the $f_{text{PWM}}$ and the normalized heater-to-detector distance $(D_{x}/L_{x})$. Herein, an optimal region, where $S^{ast}geq 0.95$, has been identified to enhance the sensor performance with the corresponding optimal $f_{text{PWM}}$ range of $22sim 26text{Hz}$ and optimal $D_{x}/L_{x}$ range of 0. $42sim 0.53$. Thus, the diagram can be useful to guide the designing optimization of TEAM sensors.
{"title":"Theoretical and Experimental Investigations of the PWM Frequency Effect on the Sensitivity of Thermal Expansion-Based Angular Motion Sensor","authors":"Huahuang Luo, Jose Cabot, Xiaoyi Wang, Mingzheng Duan, Yi-Kuen Lee","doi":"10.1109/Transducers50396.2021.9495401","DOIUrl":"https://doi.org/10.1109/Transducers50396.2021.9495401","url":null,"abstract":"In this paper, we present a systematic study of the PWM frequency (<tex>$f_{text{PWM}}$</tex>) effect on the sensitivity of a thermal expansion-based angular motion (TEAM) sensor. An optimal <tex>$f_{text{PWM}}$</tex> of heaters was experimentally derived for each pair of temperature detectors to achieve the optimized sensitivity. Based on the time-dependent analysis of our <tex>$2mathrm{D}$</tex> PDE model and experiments, a semi-empirical formula has been proposed to relate the optimal <tex>$f_{text{PWM}}, (f_{mathrm{o}})$</tex> with the thermal time constant (<tex>$tau^{ast}$</tex>). Moreover, a generalized ‘Phase Diagram’ of the TEAM sensor's normalized sensitivity (<tex>$S^{ast}$</tex>) was presented, for the first time, as a function of the <tex>$f_{text{PWM}}$</tex> and the normalized heater-to-detector distance <tex>$(D_{x}/L_{x})$</tex>. Herein, an optimal region, where <tex>$S^{ast}geq 0.95$</tex>, has been identified to enhance the sensor performance with the corresponding optimal <tex>$f_{text{PWM}}$</tex> range of <tex>$22sim 26text{Hz}$</tex> and optimal <tex>$D_{x}/L_{x}$</tex> range of 0. <tex>$42sim 0.53$</tex>. Thus, the diagram can be useful to guide the designing optimization of TEAM sensors.","PeriodicalId":6814,"journal":{"name":"2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)","volume":"129 1","pages":"406-409"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79567252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/Transducers50396.2021.9495406
Zehua Lan, Qi Tao, Zili Tang, T. Tsuchiya, M. Wong, X. Wang
This work presents a micro-fabricated planar bi-stable switch that requires no hook locking structure for switching between its two stable states. The hookless bi-stable mechanism is connected to a lever-amplifier driving by a single actuator and is built from four beams without sharp-angled design, improving durability and reducing fabrication difficulty. The setting and resetting voltages are 11 V and 12.5 V, respectively. By continuously performing more than 30,000 times of ON/OFF switching, the switch exhibits high robustness and offers potential for applications requiring a highly durable micro-switch.
{"title":"A Planar Single-Actuator Bi-Stable Switch Based on Hookless Mechanism","authors":"Zehua Lan, Qi Tao, Zili Tang, T. Tsuchiya, M. Wong, X. Wang","doi":"10.1109/Transducers50396.2021.9495406","DOIUrl":"https://doi.org/10.1109/Transducers50396.2021.9495406","url":null,"abstract":"This work presents a micro-fabricated planar bi-stable switch that requires no hook locking structure for switching between its two stable states. The hookless bi-stable mechanism is connected to a lever-amplifier driving by a single actuator and is built from four beams without sharp-angled design, improving durability and reducing fabrication difficulty. The setting and resetting voltages are 11 V and 12.5 V, respectively. By continuously performing more than 30,000 times of ON/OFF switching, the switch exhibits high robustness and offers potential for applications requiring a highly durable micro-switch.","PeriodicalId":6814,"journal":{"name":"2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)","volume":"23 1","pages":"128-131"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74059342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/Transducers50396.2021.9495383
C. Kim
As a subset of microfluidics, digital microfluidics handles fluids as small discrete entities (e.g., droplets) by actuating them individually. The choice of actuation mechanism to handle droplets has been electrowetting, especially in the form of electrowetting-on-dielectric (EWOD) developed in early 2000s. Because of its elegantly simple platform (no channel, pump or valve needed), EWOD digital microfluidics has been attracting high research interest and led to a series of commercial products in recent years. However, the number of labs utilizing digital microfluidics is still relatively small due to the difficulties fabricating and operating EWOD devices. To open the bottlenecks, we have been striving to establish a cloud-based ecosystem, where digital microfluidics would be accessible to a wide range of end users regardless of their background. The goal is to allow the end users (researchers, entrepreneurs, students, and hobbyists alike) to focus on their own ideas and applications without worrying about the engineering side of the technology. Presented will be the approach, progress, and the status and direction of the endeavor as well as the future outlook.
{"title":"Democratizing Digital Microfluidics","authors":"C. Kim","doi":"10.1109/Transducers50396.2021.9495383","DOIUrl":"https://doi.org/10.1109/Transducers50396.2021.9495383","url":null,"abstract":"As a subset of microfluidics, digital microfluidics handles fluids as small discrete entities (e.g., droplets) by actuating them individually. The choice of actuation mechanism to handle droplets has been electrowetting, especially in the form of electrowetting-on-dielectric (EWOD) developed in early 2000s. Because of its elegantly simple platform (no channel, pump or valve needed), EWOD digital microfluidics has been attracting high research interest and led to a series of commercial products in recent years. However, the number of labs utilizing digital microfluidics is still relatively small due to the difficulties fabricating and operating EWOD devices. To open the bottlenecks, we have been striving to establish a cloud-based ecosystem, where digital microfluidics would be accessible to a wide range of end users regardless of their background. The goal is to allow the end users (researchers, entrepreneurs, students, and hobbyists alike) to focus on their own ideas and applications without worrying about the engineering side of the technology. Presented will be the approach, progress, and the status and direction of the endeavor as well as the future outlook.","PeriodicalId":6814,"journal":{"name":"2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)","volume":"160 1","pages":"4-4"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84820519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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