Pub Date : 2024-07-04DOI: 10.1109/LMWT.2024.3412756
Baoping Ren;Wenjia Yuan;Xuehui Guan;Xinlei Liu;Xiaoyan Zhang;Haiwen Liu
In this letter, a newly dual-mode composite right-/left-handed (CRLH) resonator with fully symmetrical structure is proposed to design high-order high-temperature superconducting (HTS) dual-band differential bandpass filter (BPF). Based on the conventional CRLH unit cell, a dual-mode symmetrical CRLH resonator is developed for constructing dual-band differential BPF. The resonant properties of the proposed dual-mode resonator are investigated by building differential-mode (DM) and common-mode (CM) equivalent circuits (ECs) and their lumped ECs (LECs). Finally, a fourth-order dual-band HTS differential BPF with two DM passbands that operate at 2.45 and 4.94 GHz is designed. Good agreement between the simulated and measured results validates the proposed structure and the design method.
{"title":"High-Order Superconducting Dual-Band Differential Bandpass Filter Using Symmetrical Composite Right-/Left-Handed Resonator With Wide Stopband","authors":"Baoping Ren;Wenjia Yuan;Xuehui Guan;Xinlei Liu;Xiaoyan Zhang;Haiwen Liu","doi":"10.1109/LMWT.2024.3412756","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3412756","url":null,"abstract":"In this letter, a newly dual-mode composite right-/left-handed (CRLH) resonator with fully symmetrical structure is proposed to design high-order high-temperature superconducting (HTS) dual-band differential bandpass filter (BPF). Based on the conventional CRLH unit cell, a dual-mode symmetrical CRLH resonator is developed for constructing dual-band differential BPF. The resonant properties of the proposed dual-mode resonator are investigated by building differential-mode (DM) and common-mode (CM) equivalent circuits (ECs) and their lumped ECs (LECs). Finally, a fourth-order dual-band HTS differential BPF with two DM passbands that operate at 2.45 and 4.94 GHz is designed. Good agreement between the simulated and measured results validates the proposed structure and the design method.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"979-982"},"PeriodicalIF":0.0,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-04DOI: 10.1109/LMWT.2024.3412964
Sara Hamzeloui;Akshay M. Arabhavi;Filippo Ciabattini;Giorgio Bonomo;Mojtaba Ebrahimi;Rimjhim Chaudhary;Markus Müller;Olivier Ostinelli;Michael Schröter;Colombo R. Bolognesi
We report the 170-GHz power performance of multifinger common-emitter (CE) 300-nm indium phosphide (InP)/GaAsSb double heterojunction bipolar transistors (DHBTs). Devices with one-, two-, and four-finger(s) with 7.5-, 10-, or 12.5- $mu $ m-long emitter fingers were simultaneously fabricated. A record power-added efficiency PAE =35% is measured for single-finger 7.5- $mu $ m-long DHBTs with a saturated matched output power $P_{mathrm {OUT,SAT}} =9.5$ dBm. A $P_{mathrm {OUT,SAT}} gt 12$ and >14.5 dBm with peak PAE =25% and 22% is delivered from two- and four-finger 10- $mu $ m-long DHBTs, respectively. To the best of our knowledge, 35% is the highest PAE reported for any PA/PA cell in any transistor technology over the entire G-band range. We attribute the high efficiency achieved in this study to the exceptionally high gain transistors in the (sub)-millimeter-wave (mm-wave) range, as well as the advantageous combination of high breakdown and low knee voltages. This work details the first G-band power characterization of single- and multi-finger GaAsSb-based DHBTs—it is also the first such study in any InP DHBT. An all-technology record Class-A G-band PAE is achieved with a minimal reduction with respect to W-band peak PAE levels. An HICUM-based large-signal model verifies the mm-wave RF measurements.
{"title":"Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs","authors":"Sara Hamzeloui;Akshay M. Arabhavi;Filippo Ciabattini;Giorgio Bonomo;Mojtaba Ebrahimi;Rimjhim Chaudhary;Markus Müller;Olivier Ostinelli;Michael Schröter;Colombo R. Bolognesi","doi":"10.1109/LMWT.2024.3412964","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3412964","url":null,"abstract":"We report the 170-GHz power performance of multifinger common-emitter (CE) 300-nm indium phosphide (InP)/GaAsSb double heterojunction bipolar transistors (DHBTs). Devices with one-, two-, and four-finger(s) with 7.5-, 10-, or 12.5-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m-long emitter fingers were simultaneously fabricated. A record power-added efficiency PAE =35% is measured for single-finger 7.5-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m-long DHBTs with a saturated matched output power \u0000<inline-formula> <tex-math>$P_{mathrm {OUT,SAT}} =9.5$ </tex-math></inline-formula>\u0000 dBm. A \u0000<inline-formula> <tex-math>$P_{mathrm {OUT,SAT}} gt 12$ </tex-math></inline-formula>\u0000 and >14.5 dBm with peak PAE =25% and 22% is delivered from two- and four-finger 10-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m-long DHBTs, respectively. To the best of our knowledge, 35% is the highest PAE reported for any PA/PA cell in any transistor technology over the entire G-band range. We attribute the high efficiency achieved in this study to the exceptionally high gain transistors in the (sub)-millimeter-wave (mm-wave) range, as well as the advantageous combination of high breakdown and low knee voltages. This work details the first G-band power characterization of single- and multi-finger GaAsSb-based DHBTs—it is also the first such study in any InP DHBT. An all-technology record Class-A G-band PAE is achieved with a minimal reduction with respect to W-band peak PAE levels. An HICUM-based large-signal model verifies the mm-wave RF measurements.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"1003-1006"},"PeriodicalIF":0.0,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10584507","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents a novel microwave heating method that utilizes tubular loads as a substitute for the inner conductor of a coaxial waveguide, thereby improving heating uniformity and energy coupling efficiency through the TEM mode. First, the effect of replacing the inner conductor of the coaxial waveguide with dielectric on microwave propagation was analyzed. It was found that the microwave still maintains the TEM mode when its dielectric constant exceeds 20. Second, a waveguide-to-coaxial transition is designed, utilizing probe coupling methods with a tapered structure, resulting in a 53% increase in return loss (-10 dB) bandwidth. Finally, a microwave heating device was designed based on this transition. Compared with common microwave ovens, the microwave energy conversion efficiency of this method exceeds 90% for tubular materials with dielectric constants from 20 to 70, and it exhibited higher uniformity. It can be applied to the continuous industrial production of tubular materials.
这封信提出了一种新型微波加热方法，利用管状负载替代同轴波导的内导体，从而通过 TEM 模式改善加热均匀性和能量耦合效率。首先，分析了用电介质替代同轴波导内导体对微波传播的影响。结果发现，当介电常数超过 20 时，微波仍能保持 TEM 模式。其次，利用锥形结构的探针耦合方法，设计了波导到同轴的过渡，使回波损耗（-10 dB）带宽增加了 53%。最后，基于这种过渡设计了一种微波加热装置。与普通微波炉相比，对于介电常数在 20 到 70 之间的管状材料，这种方法的微波能量转换效率超过 90%，而且表现出更高的均匀性。它可以应用于管状材料的连续工业生产。
{"title":"High-Performance Microwave Heating Device for Tubular Loads Using a Quasi-Coaxial Structure","authors":"Fengming Yang;Yuanyuan Wu;Liaoyuan Xu;Jinghua Ye;Chengzhuo Wang;Yang Yang;Tao Hong;Huacheng Zhu","doi":"10.1109/LMWT.2024.3404782","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3404782","url":null,"abstract":"This letter presents a novel microwave heating method that utilizes tubular loads as a substitute for the inner conductor of a coaxial waveguide, thereby improving heating uniformity and energy coupling efficiency through the TEM mode. First, the effect of replacing the inner conductor of the coaxial waveguide with dielectric on microwave propagation was analyzed. It was found that the microwave still maintains the TEM mode when its dielectric constant exceeds 20. Second, a waveguide-to-coaxial transition is designed, utilizing probe coupling methods with a tapered structure, resulting in a 53% increase in return loss (-10 dB) bandwidth. Finally, a microwave heating device was designed based on this transition. Compared with common microwave ovens, the microwave energy conversion efficiency of this method exceeds 90% for tubular materials with dielectric constants from 20 to 70, and it exhibited higher uniformity. It can be applied to the continuous industrial production of tubular materials.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 7","pages":"963-966"},"PeriodicalIF":0.0,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141602540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-03DOI: 10.1109/LMWT.2024.3419246
Li Wang;Dehai Zhang;Jin Meng
This letter presents a broadband frequency doubler that covers the 165–260 GHz range. To achieve the broadband matching of Schottky barrier diodes (SBDs), an “Hourglass-shaped” (H-S) transmission line is applied in this work. Compared to the conventional high-low impedance microstrip matching, the “H-S” transmission line adopts an asymmetric taper of microstrip steps, resulting in lower transmission loss of interstage microstrip according to the small reflection theory. Meanwhile, the “H-S” transmission line is carefully designed to achieve a minimum reflection coefficient from SBDs to the output waveguide, which can expand the operating bandwidth. To verify this concept, we fabricated and measured a broadband frequency doubler. Measured results show that the doubler has an efficiency of 6.02%–12.02% covering the 165–260 GHz frequency band under 95–135 mW input power. The peak output power is 14.9 mW at 181 GHz under the 135 mW input power.
{"title":"A 165–260 GHz Broadband Frequency Doubler Using “Hourglass-Shaped” Transmission Matching Technology","authors":"Li Wang;Dehai Zhang;Jin Meng","doi":"10.1109/LMWT.2024.3419246","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3419246","url":null,"abstract":"This letter presents a broadband frequency doubler that covers the 165–260 GHz range. To achieve the broadband matching of Schottky barrier diodes (SBDs), an “Hourglass-shaped” (H-S) transmission line is applied in this work. Compared to the conventional high-low impedance microstrip matching, the “H-S” transmission line adopts an asymmetric taper of microstrip steps, resulting in lower transmission loss of interstage microstrip according to the small reflection theory. Meanwhile, the “H-S” transmission line is carefully designed to achieve a minimum reflection coefficient from SBDs to the output waveguide, which can expand the operating bandwidth. To verify this concept, we fabricated and measured a broadband frequency doubler. Measured results show that the doubler has an efficiency of 6.02%–12.02% covering the 165–260 GHz frequency band under 95–135 mW input power. The peak output power is 14.9 mW at 181 GHz under the 135 mW input power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"1039-1042"},"PeriodicalIF":0.0,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141964831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-01DOI: 10.1109/LMWT.2024.3418455
Behnam Pouya
This letter presents the implementation of a 20-terahertz (THz) far-infrared (FIR) imager using an antenna-coupled Schottky barrier diode (SBD) structure fabricated in a 130-nm foundry CMOS process without any process modifications. The detector’s performance is characterized using a 15.1- $mu $ m quantum-cascade laser (QCL) source. At a modulation frequency of 13 Hz, the detector achieves a peak optical responsivity ( $R_{v}$ ) of 35.2 V/W, which is ~six times higher than that of CMOS detectors operating in a similar frequency range. The measured shot-noise limited noise equivalent power (NEP) is 1.8 nW/ $surd $ Hz, which is comparable to that of commercially available thermopile detectors that are 47000 times larger in area.
{"title":"20-THz Far-Infrared Imaging Using an Antenna-Coupled Schottky Barrier Diode in a Foundry CMOS","authors":"Behnam Pouya","doi":"10.1109/LMWT.2024.3418455","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3418455","url":null,"abstract":"This letter presents the implementation of a 20-terahertz (THz) far-infrared (FIR) imager using an antenna-coupled Schottky barrier diode (SBD) structure fabricated in a 130-nm foundry CMOS process without any process modifications. The detector’s performance is characterized using a 15.1-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000m quantum-cascade laser (QCL) source. At a modulation frequency of 13 Hz, the detector achieves a peak optical responsivity (\u0000<inline-formula> <tex-math>$R_{v}$ </tex-math></inline-formula>\u0000) of 35.2 V/W, which is ~six times higher than that of CMOS detectors operating in a similar frequency range. The measured shot-noise limited noise equivalent power (NEP) is 1.8 nW/\u0000<inline-formula> <tex-math>$surd $ </tex-math></inline-formula>\u0000Hz, which is comparable to that of commercially available thermopile detectors that are 47000 times larger in area.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"1047-1050"},"PeriodicalIF":0.0,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141964833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-28DOI: 10.1109/LMWT.2024.3416490
Jaehyun Kwon;Changkun Park
In this study, we designed a W-band asymmetric single-pole double-throw (SPDT) switch using a 65-nm RFCMOS process. In order to secure the power-handling capability of the switch, all transistors constituting the switch were designed to be in the on-state in the transmit (Tx) mode. In addition, the designed switch was matched in the Tx mode and achieved compact size using the property of the inductor. In the receive (Rx) mode, four LC resonators were used to achieve both wide and high isolation and low insertion loss. At 70–90 GHz, the isolations in the Tx and Rx modes were measured higher than 17.5 and 22.5 dB, respectively. The insertion losses in the Tx and Rx modes were measured less than 3.71 and 3.11 dB, respectively, in the frequency range of 70–90 GHz. The measured input 1-dB compression points (IP1dBs) at 80 GHz were >18.5 dBm and 7.5 dBm in the Tx and Rx modes, respectively. The core size of the designed SPDT switch is 0.057 mm2.
{"title":"W-Band Asymmetric CMOS Switch Using Inductive Matching Technique","authors":"Jaehyun Kwon;Changkun Park","doi":"10.1109/LMWT.2024.3416490","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3416490","url":null,"abstract":"In this study, we designed a W-band asymmetric single-pole double-throw (SPDT) switch using a 65-nm RFCMOS process. In order to secure the power-handling capability of the switch, all transistors constituting the switch were designed to be in the on-state in the transmit (Tx) mode. In addition, the designed switch was matched in the Tx mode and achieved compact size using the property of the inductor. In the receive (Rx) mode, four LC resonators were used to achieve both wide and high isolation and low insertion loss. At 70–90 GHz, the isolations in the Tx and Rx modes were measured higher than 17.5 and 22.5 dB, respectively. The insertion losses in the Tx and Rx modes were measured less than 3.71 and 3.11 dB, respectively, in the frequency range of 70–90 GHz. The measured input 1-dB compression points (IP1dBs) at 80 GHz were >18.5 dBm and 7.5 dBm in the Tx and Rx modes, respectively. The core size of the designed SPDT switch is 0.057 mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"1007-1010"},"PeriodicalIF":0.0,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-26DOI: 10.1109/LMWT.2024.3416435
Jian-Xin Chen;Yu-Xing Yan;Ye-Xin Huang;Wei Yu;Yunli Li
A simple design approach of wideband three-way filtering power divider (FPD) with unequal division ratio based on coaxial-to-rectangular waveguide (RWG) transition is investigated. The bandpass filtering response is achieved using high-pass characteristic of RGW and bandgap characteristic of coaxial-to-RWG transition improved by loading T-type resonators. The allocation of power depends solely on the distance between the outputs and the central plane of the rectangular cavity. Meanwhile, the filtering functions and power splitting are independent of each other, achieving sharped roll-off of the upper stopband and unequal power division ratio. For validation, a wideband unequal FPD with center frequency at 4.1 GHz and with 3-dB fractional bandwidth (FBW) of 58.5% is designed, simulated, and fabricated. The insertion loss (IL) of all three outputs is less than 0.4 dB (excluding ideal loss), demonstrating the advantage of low loss in the rectangular cavity.
{"title":"Wideband Three-Way FPD With Unequal Division Ratio Based on Coaxial-to-RWG Transition","authors":"Jian-Xin Chen;Yu-Xing Yan;Ye-Xin Huang;Wei Yu;Yunli Li","doi":"10.1109/LMWT.2024.3416435","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3416435","url":null,"abstract":"A simple design approach of wideband three-way filtering power divider (FPD) with unequal division ratio based on coaxial-to-rectangular waveguide (RWG) transition is investigated. The bandpass filtering response is achieved using high-pass characteristic of RGW and bandgap characteristic of coaxial-to-RWG transition improved by loading T-type resonators. The allocation of power depends solely on the distance between the outputs and the central plane of the rectangular cavity. Meanwhile, the filtering functions and power splitting are independent of each other, achieving sharped roll-off of the upper stopband and unequal power division ratio. For validation, a wideband unequal FPD with center frequency at 4.1 GHz and with 3-dB fractional bandwidth (FBW) of 58.5% is designed, simulated, and fabricated. The insertion loss (IL) of all three outputs is less than 0.4 dB (excluding ideal loss), demonstrating the advantage of low loss in the rectangular cavity.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"987-990"},"PeriodicalIF":0.0,"publicationDate":"2024-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-26DOI: 10.1109/LMWT.2024.3416545
Yu-Ming Li;Hong-Ji Li;Chao Wu;Sai-Wai Wong
The design approach for multistate diplexers based on coaxial resonators is presented for the first time in this letter. By partitioning a large cylindrical cavity into multiple sections, a wide range of frequency channels is established, enabling the formation of different states for the diplexer through the selection of specific frequency channels. By introducing cross coupling in the resonators, a transmission zero is achieved within each channel, resulting in sharp out-of-band rejection skirts. The proposed multistate diplexers exhibit improved performance along with compact structures. A third-order four-state diplexer (FSD) is designed and presented, and the same methodology can be applied to create the mth-order and n-state diplexers. To validate this concept, the FSD is fabricated and measured, with the measurement results exhibiting good agreement with the simulation results.
本文首次介绍了基于同轴谐振器的多态双工器的设计方法。通过将一个大型圆柱形腔体分割成多个部分，建立了广泛的频率信道，从而能够通过选择特定频率信道形成双工器的不同状态。通过在谐振器中引入交叉耦合，在每个信道内实现零传输，从而产生尖锐的带外抑制裙边。所提出的多态双工器性能提高，结构紧凑。设计并展示了一个三阶四态双工器（FSD），同样的方法可用于创建 mth 阶和 n 阶双工器。为了验证这一概念，对 FSD 进行了制造和测量，测量结果与模拟结果显示出良好的一致性。
{"title":"Design of Multistate Cavity Diplexers Based on Coaxial Resonators","authors":"Yu-Ming Li;Hong-Ji Li;Chao Wu;Sai-Wai Wong","doi":"10.1109/LMWT.2024.3416545","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3416545","url":null,"abstract":"The design approach for multistate diplexers based on coaxial resonators is presented for the first time in this letter. By partitioning a large cylindrical cavity into multiple sections, a wide range of frequency channels is established, enabling the formation of different states for the diplexer through the selection of specific frequency channels. By introducing cross coupling in the resonators, a transmission zero is achieved within each channel, resulting in sharp out-of-band rejection skirts. The proposed multistate diplexers exhibit improved performance along with compact structures. A third-order four-state diplexer (FSD) is designed and presented, and the same methodology can be applied to create the mth-order and n-state diplexers. To validate this concept, the FSD is fabricated and measured, with the measurement results exhibiting good agreement with the simulation results.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"983-986"},"PeriodicalIF":0.0,"publicationDate":"2024-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-25DOI: 10.1109/LMWT.2024.3412592
Nicholas R. Jungwirth;Bryan T. Bosworth;Aaron M. Hagerstrom;Meagan C. Papac;Eric J. Marksz;Jerome Cheron;Kassiopeia Smith;Angela C. Stelson;Ari Feldman;Dylan F. Williams;Christian J. Long;Nathan D. Orloff
We test a multimodal analytical model for distributed contactless interconnects by comparing it to 3-D full-wave simulations. In comparison to 3-D simulations, the model offers insight into how the interconnect works and reduces the computational cost of estimating and optimizing the interconnect’s performance. The model predicts the performance of four distributed contactless interconnects and finds good agreement between with 3-D simulations up to 1 THz. All the interconnects have less than 1-dB insertion loss in their first pass bands, highlighting the opportunity offered by contactless interconnects.
{"title":"A Distributed Theory for Contactless Interconnects at Terahertz Frequencies","authors":"Nicholas R. Jungwirth;Bryan T. Bosworth;Aaron M. Hagerstrom;Meagan C. Papac;Eric J. Marksz;Jerome Cheron;Kassiopeia Smith;Angela C. Stelson;Ari Feldman;Dylan F. Williams;Christian J. Long;Nathan D. Orloff","doi":"10.1109/LMWT.2024.3412592","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3412592","url":null,"abstract":"We test a multimodal analytical model for distributed contactless interconnects by comparing it to 3-D full-wave simulations. In comparison to 3-D simulations, the model offers insight into how the interconnect works and reduces the computational cost of estimating and optimizing the interconnect’s performance. The model predicts the performance of four distributed contactless interconnects and finds good agreement between with 3-D simulations up to 1 THz. All the interconnects have less than 1-dB insertion loss in their first pass bands, highlighting the opportunity offered by contactless interconnects.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"975-978"},"PeriodicalIF":0.0,"publicationDate":"2024-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10570460","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-24DOI: 10.1109/LMWT.2024.3411572
Yi Ding;Tianyi Li;Xinqin Guo;Hongming Lyu
This letter presents a 9-V wireless power and data receiver IC in a standard CMOS process technology. A transistor-stacking scheme is employed for accommodating active circuits in a high-voltage domain that exceeds the transistor’s voltage tolerance. The IC successfully generates 9-V through a 21-stage cross-coupled rectifier and regulated 6- and 3-V supplies with low-dropout regulators (LDOs) delivering a maximum power of 27 mW with a peak power conversion efficiency (PCE) of 74.2%. Forward telemetry at 200 kbit/s and backward telemetry at 10 kbit/s are achieved based on on-off keying (OOK) and load-shift keying (LSK) modulation schemes, respectively, which negligibly affect the generated voltage domains. The IC serves as a wireless power solution for batteryless and high-voltage-required medical implants.
这封信介绍了一种采用标准 CMOS 工艺技术的 9 V 无线电源和数据接收器集成电路。该集成电路采用晶体管堆叠方案，可在超出晶体管耐压能力的高压域中容纳有源电路。该集成电路通过 21 级交叉耦合整流器成功产生 9 V 电压，并利用低压差稳压器 (LDO) 调节 6 V 和 3 V 电源，提供 27 mW 的最大功率，峰值功率转换效率 (PCE) 为 74.2%。基于开关键控（OOK）和负载移动键控（LSK）调制方案，分别实现了 200 kbit/s 的前向遥测和 10 kbit/s 的后向遥测，对所产生的电压域的影响可忽略不计。该集成电路可作为无电池和需要高电压的医疗植入物的无线供电解决方案。
{"title":"A 9-V Wireless Power Receiver IC With 74.2% Power Conversion Efficiency and Integrated Bidirectional Telemetries for Implantable Neurostimulation Systems in Standard CMOS","authors":"Yi Ding;Tianyi Li;Xinqin Guo;Hongming Lyu","doi":"10.1109/LMWT.2024.3411572","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3411572","url":null,"abstract":"This letter presents a 9-V wireless power and data receiver IC in a standard CMOS process technology. A transistor-stacking scheme is employed for accommodating active circuits in a high-voltage domain that exceeds the transistor’s voltage tolerance. The IC successfully generates 9-V through a 21-stage cross-coupled rectifier and regulated 6- and 3-V supplies with low-dropout regulators (LDOs) delivering a maximum power of 27 mW with a peak power conversion efficiency (PCE) of 74.2%. Forward telemetry at 200 kbit/s and backward telemetry at 10 kbit/s are achieved based on on-off keying (OOK) and load-shift keying (LSK) modulation schemes, respectively, which negligibly affect the generated voltage domains. The IC serves as a wireless power solution for batteryless and high-voltage-required medical implants.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"1051-1054"},"PeriodicalIF":0.0,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141964810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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