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The contribution of kinetic nucleation theories to studies of Volmer-Weber thin film growth 动力学成核理论对Volmer-Weber薄膜生长研究的贡献
Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90182-5
B.F. Usher

Extensive study of the vapour deposition of noble metals onto UHV cleaved alkali halide crystal surfaces has made an important contribution to the development of time-dependent nucleation theory. There nevertheless remain significant inconsistencies between results obtained from different studies of identical systems. The role which the time-dependent kinetic approach to nucleation theory has played in the past and that which it might take in the future are discussed.

贵重金属在特高压劈裂碱卤化物晶体表面气相沉积的广泛研究,对时变成核理论的发展作出了重要贡献。然而,从相同系统的不同研究中获得的结果之间仍然存在显著的不一致。讨论了随时间变化的动力学方法在成核理论中过去所起的作用和将来可能发挥的作用。
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引用次数: 11
SEM alloyed AuGeNi ohmic contacts to GaAs SEM alloyedGe在既ohmic接触GaAs摄氏度
Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90236-3
A.G. Nassibian, T.S. Kalkur

A scanned electron beam from a commercial SEM is used for the localized alloying of vacuum evaporated AuGeNi contacts on n-type GaAs. The contact quality is studied for metallization thickness, 450–1350 Å, for furnace and electron beam alloyed contacts. For the electron beam alloyed method, the contact resistivity decreases with increasing metallization thickness and remains constant for thicknesses above 750 Å. Scanning electron microscopy and electron microprobe analysis shows that electron beam alloyed contacts undergo less redistribution of contact constituents than furnace alloyed contacts. The stability of the contacts is determined by high temperature ageing.

用商用扫描电镜扫描电子束对n型砷化镓上真空蒸发AuGeNi触点进行局部合金化。研究了在金属化厚度450 ~ 1350 Å范围内,电炉和电子束合金触点的接触质量。对于电子束合金化方法,接触电阻率随金属化厚度的增加而减小,当金属化厚度大于750时保持恒定Å。扫描电镜和电子探针分析表明,电子束合金触点比炉合金触点发生较少的触点成分重分布。触点的稳定性由高温老化决定。
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引用次数: 3
Anisotropic etching during negative ion resputtering 负离子溅射过程中的各向异性蚀刻
Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90042-X
Russell Messier, Daniel J. Kester

Negative ion resputtering leads to a nonuniform erosion of material which can result in a wide range of morphological features. These various surface structures are a consequence of focused bombardment processes which are highly sensitive to sputtering system geometry and preparation parameters. The continuous manner in which the features are connected leads to a clearer understanding of each.

负离子溅射导致材料的不均匀侵蚀,这可能导致广泛的形态特征。这些不同的表面结构是聚焦轰击过程的结果,这对溅射系统的几何形状和制备参数高度敏感。特征连接的连续方式可以更清楚地理解每个特征。
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引用次数: 1
Amorphous silicon solar cells produced by a DC magnetron glow discharge technique 用直流磁控管辉光放电技术制备非晶硅太阳能电池
Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90221-1
D.R. McKenzie , G.B. Smith

The production of amorphous silicon solar cells using deposition from a DC magnetron glow discharge is described. The cells have the p-i-n structure with indium tin oxide front contacts. Fill factors of 40% and overall solar efficiencies of around 1.2% were obtained. Investigations were carried out to determine the reasons for deficiencies in the carrier collection efficiency. The cell efficiency was increased by increasing the μτ product of the i-layer. The spectral dependences of carrier collection efficiency, open circuit voltage and fill factors were determined. Comparison with published theoretical models of similar cells showed that for the best cells, surface recombination effects limited the efficiency. Argon used in the p-layer deposition was the most likely cause of these effects.

介绍了用直流磁控管辉光放电沉积法生产非晶硅太阳能电池的方法。电池具有具有氧化铟锡前触点的p-i-n结构。填充系数为40%,整体太阳能效率约为1.2%。进行了调查,以确定载体收集效率不足的原因。通过增加i层的μτ积,提高了电池效率。确定了载流子收集效率、开路电压和填充因子与光谱的关系。与已发表的类似电池的理论模型比较表明,对于最好的电池,表面重组效应限制了效率。p层沉积中使用的氩最有可能是造成这些影响的原因。
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引用次数: 3
Surface compositions of the two phases of differently prepared Ni-Cr-Al and Ni-Cr-Al-Zr samples 不同制备的Ni-Cr-Al和Ni-Cr-Al- zr样品的两相表面组成
Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90050-9
M.M. El Gomati, M. Prutton, R.H. Roberts

The surface compositions of the α/β and γ/γ' phases of different metallographic preparations of Ni-15Cr-24Al and Ni-15Cr-24Al-0.3Zr (at%) alloys are presented. Surfaces investigated include a mechanically polished surface for both alloys, a mechanically polished acid etched surface of the Ni-Cr-Al-Zr both before heating and after heating to 600°C for several hours, and the underlying surface of this latter sample exposed by ball cratering. Both phases of all surfaces considered show depletion of Al. It is concluded that the Al depletion is not an artefact of the sample metallographic preparation or the analytical procedure. This is supported by analysis of the composition of a sample scratched in situ under UHV. It is further concluded that the Al depletion is due to oxidation during bakeout. Cr-rich features in both the α/β and γ/γ' phases are reported. An optimal two dimensionally smoothed Cr Auger image is presented showing these features which are considered to be due to the αCr solid solution particles or clustering of these particles in the α/β phase and the Ni solid solution component in the γ/γ' phase.

研究了Ni-15Cr-24Al和Ni-15Cr-24Al-0.3 zr (at%)合金不同金相制备过程中α/β和γ/γ′相的表面组成。所研究的表面包括两种合金的机械抛光表面,Ni-Cr-Al-Zr在加热前和加热至600°C数小时后的机械抛光酸蚀表面,以及后一种样品的下表面。所考虑的所有表面的两相都显示出铝的损耗。由此得出结论,铝的损耗不是样品金相制备或分析过程的人工产物。这是由在特高压下原位划伤的样品的成分分析支持的。进一步得出铝的损耗是由于焙烧过程中的氧化所致。α/β相和γ/γ′相均具有富cr特征。二维光滑Cr俄格图像显示了这些特征,这些特征被认为是由于αCr固溶体颗粒或这些颗粒在α/β相中聚集而Ni固溶体成分在γ/γ′相中。
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引用次数: 1
Some properties of Si(111) and Ge(111) cleaved surfaces at low temperatures 低温下Si(111)和Ge(111)切割表面的一些性质
Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90032-7
V.A. Grazhulis, V.F. Kuleshov

Low-temperature experimental results on Ge(111) and Si(111) surfaces prepared by crystal cleavage in ultra-high vacuum (∼ 10-10 Torr), liquid N2, and liquid He are presented and briefly discussed. Some of these results are reanalyzed and new interpretations are suggested.

介绍了在超高真空(~ 10-10 Torr)、液态N2和液态He条件下晶体解理制备Ge(111)和Si(111)表面的低温实验结果,并进行了简要讨论。对其中的一些结果进行了重新分析,并提出了新的解释。
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引用次数: 2
Some strategies for quantitative scanning Auger electron microscopy 定量扫描俄歇电子显微镜的一些策略
Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90046-7
R. Browning , D.C. Peacock, M. Prutton

The general applicability of power law forms of the background in electron spectra is pointed out and exploited for background removal from under Auger peaks. This form of B(E) is found to be extremely sensitive to instrumental alignment and to fault-free construction - an observation which can be used to set up analyser configurations in an accurate way. Also, differences between N(E) and B(E) can be used to derive a spectrometer transmission function T(E). The questions of information density in an energy-analysing spatially-resolving instrument are addressed after reliable instrumental characterization has been established. Strategies involving ratio histograms, showing the population distribution of the ratio of a pair of Auger peak heights, composition scatter diagrams and windowed imaging are discussed and illustrated.

指出了电子能谱中背景幂律形式的一般适用性,并利用幂律形式从俄歇峰下去除背景。这种形式的B(E)被发现对仪器校准和无故障结构极其敏感-这种观察可以用来精确地设置分析仪配置。此外,N(E)和B(E)之间的差异可以用来推导光谱仪透射函数T(E)。在建立了可靠的仪器表征后,解决了能量分析空间分辨仪器中的信息密度问题。讨论并说明了包括比值直方图、成分散点图和窗口成像在内的策略。比值直方图显示了一对俄歇峰高比值的总体分布。
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引用次数: 3
Further studies on the semiconductivity and pyroelectricity of poled and Cd-doped mercury telluride thin films for electronics and engineering 电子和工程用掺杂镉和极化碲化汞薄膜的半导体性和热电性的进一步研究
Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90209-0
A. Tawfik, M.M.Abou Sekkina, M.I.Abd El-Ati

The crystalline structure, electrical conductivity, and pyroelectricity of freshly prepared Hg0.7Cd0.30Te thin films have been investigated in detail. It was found that these properties hold good with one another. The roles of Hg migration, non-stoichiometry and degree of crystallinity are clearly indicated. Finally, the optimum conditions were evaluated and recommended for mercury telluride thin films for application in electronic industries and engineering.

研究了新制备的Hg0.7Cd0.30Te薄膜的晶体结构、电导率和热释电性能。人们发现,这些性质彼此保持良好。明确指出了汞迁移、非化学计量学和结晶度的作用。最后,对碲化汞薄膜在电子工业和工程中的应用进行了评价和推荐。
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引用次数: 1
The role of hydrogen and boron in a-SiH : B—Electronic and optical properties 氢和硼在a-SiH: b中电子和光学性质的作用
Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90224-7
N. Savvides

Measurements of electrical conductivity and optical constants of thin films of a-SiH : B produced with varying hydrogen concentration (CH = 0–30 at%) and boron concentration (CB = 0.1–10 at%) are used to investigate the effects of increasing hydrogenation and doping on the density of states (DOS) of the a-Si network. There exist strong and abnormal dependences of electronic properties on CH and CB which correlate with increasing topological disorder of the a-Si network. For undoped films, concentrations of hydrogen up to 15 at% lead to a general decrease in the density of defect and band-tail states, a redistribution of valence band states, and a widening of the optical gap. A hydrogen content > 15 at% leads to increasing density of localized dangling-bond type states and deep-lying valence band states suggesting substantial topological disorder.

采用不同氢浓度(CH = 0-30 at%)和硼浓度(CB = 0.1-10 at%)制备的a-SiH: B薄膜的电导率和光学常数,研究了加氢和掺杂对a-Si网络态密度(DOS)的影响。电子性质对CH和CB存在强烈的异常依赖,这与a-Si网络拓扑无序度的增加有关。对于未掺杂的薄膜,高达15% at%的氢浓度会导致缺陷态和带尾态密度的普遍降低,价带态的重新分布,以及光学间隙的扩大。氢含量>15 at%导致局域悬垂键型态和深层价带态密度增加,表明存在大量的拓扑无序。
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引用次数: 2
Fe/MgO(001) model catalysts: Electron microscopic and spectroscopic studies Fe/MgO(001)模型催化剂:电子显微镜和光谱研究
Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90195-3
R.A. Hubert, J.M. Gilles

An ultrathin iron film deposited on a MgO single crystal in UHV is heated up to 500°C. AES/LEED measurements combined with TEM observations performed on small single crystal platelets show that the film is transformed into small particles below 300°C. Around 380°C, surface diffusion induces a spectacular growth of some particles. Upon further heating, the evolution of the system depends on the shape of the particles. In most cases, the particles become square and orient themselves along the MgO(110) direction (epitaxial configuration); however, they are unstable: they progressively dissolve in the MgO matrix, leading to a substitutional (MgxFe1−x)O solid solution. In other cases, the iron particles remain shapeless and stable, suggesting that dissolution only occurs when the particles grow epitaxially.

在超高压条件下,将超薄铁膜沉积在氧化镁单晶上,加热至500℃。AES/LEED测量结合对小单晶片的TEM观察表明,薄膜在300°C以下转变为小颗粒。在380°C左右,表面扩散引起一些粒子的显著生长。进一步加热后,系统的演化取决于粒子的形状。在大多数情况下,粒子变成方形并沿着MgO(110)方向定向(外延结构);然而,它们是不稳定的:它们逐渐溶解在MgO基体中,导致取代的(MgxFe1−x)O固溶体。在其他情况下,铁颗粒保持不变和稳定,这表明只有当颗粒外延生长时才会发生溶解。
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引用次数: 9
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Applications of Surface Science
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