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2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)最新文献

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Manufacturing of silver-ink micrometer inductors through multilayer D.O.D. printing for VHF Power Transfer 利用多层D.O.D.印刷制造用于甚高频功率传输的银墨微米电感
Pub Date : 2022-06-12 DOI: 10.1109/prime55000.2022.9816792
Giuseppe Barbalace, D. Natali, Martina Scolari
Silver-ink tracks features deposited through piezoelectric Drop-on-Demand printing, thanks to an innovative state-of-art printer, are described. Precise printing-trajectories are implemented to limit track-width and to increase thickness with the purpose of manufacturing high-conductivity spirals in order to create inductors for Very High Frequency power transfer applications. More layers are deposited onto polyimide without provoking noticeable track-width variations. The described printing methodology enabled a rapid and effective thickness increase, essential to manufacture high quality components characterized by low values of sheet resistance together with high values of quality factor.
银墨轨道的特点沉积通过压电滴按需印刷,感谢一个创新的国家的最先进的打印机,描述。精确的打印轨迹是为了限制轨道宽度和增加厚度,以制造高导电性螺旋,以便为甚高频功率传输应用创建电感。更多的层沉积在聚酰亚胺上,而不会引起明显的轨道宽度变化。所描述的印刷方法能够快速有效地增加厚度,这对于制造具有低片材电阻值和高质量因子值的高质量组件至关重要。
{"title":"Manufacturing of silver-ink micrometer inductors through multilayer D.O.D. printing for VHF Power Transfer","authors":"Giuseppe Barbalace, D. Natali, Martina Scolari","doi":"10.1109/prime55000.2022.9816792","DOIUrl":"https://doi.org/10.1109/prime55000.2022.9816792","url":null,"abstract":"Silver-ink tracks features deposited through piezoelectric Drop-on-Demand printing, thanks to an innovative state-of-art printer, are described. Precise printing-trajectories are implemented to limit track-width and to increase thickness with the purpose of manufacturing high-conductivity spirals in order to create inductors for Very High Frequency power transfer applications. More layers are deposited onto polyimide without provoking noticeable track-width variations. The described printing methodology enabled a rapid and effective thickness increase, essential to manufacture high quality components characterized by low values of sheet resistance together with high values of quality factor.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132210570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Logic Synthesis From Incomplete Specifications Using Disjoint Support Decomposition 基于不相交支持分解的不完全规范逻辑综合
Pub Date : 2022-06-12 DOI: 10.1109/prime55000.2022.9816806
Andrea Costamagna, G. Micheli
Approximate logic synthesis is an emerging field that tolerates errors in the synthesized logic circuits for better optimization quality. Indeed, in many computing problems, the requirement of preserving the exact functionality either results in unnecessary overuse of resources or is hardly possible to meet. The latter case is typical of incompletely specified synthesis problems, targeting the hardware implementation of a Boolean function from a partial knowledge of its care set. The missing elements of the care set are named don’t knows. Previous works identified information theory-based decomposition strategies as powerful synthesis tools. Nonetheless, the definition of an automatic method for approximate synthesis is an open problem, and the approximate counterpart of many logic synthesis techniques is still missing. In this paper, we extend a disjoint support decomposition algorithm to target Boolean functions in the presence of don’t knows. Furthermore, we integrate the decomposition in an information theory-based synthesis flow. Relative experiments on the IWLS2020 benchmarks show that, on average, the addition of the designed decomposition to the flow reduces by 15.81% the number of gates and by 9.66% the depth.
近似逻辑综合是一个新兴的领域,它可以容忍合成逻辑电路中的误差,以获得更好的优化质量。实际上,在许多计算问题中,保持精确功能的要求要么导致不必要的过度使用资源,要么几乎无法满足。后一种情况是典型的不完全指定的综合问题,目标是通过对其关心集的部分知识实现布尔函数的硬件实现。缺失的元素被命名为不知道。以前的工作将基于信息理论的分解策略确定为强大的合成工具。然而,近似综合的自动方法的定义是一个开放的问题,许多逻辑综合技术的近似对应仍然缺失。本文将不相交支持分解算法推广到不知道存在情况下的布尔函数。此外,我们将分解集成到一个基于信息论的合成流程中。在IWLS2020基准上的相关实验表明,在流量中加入设计的分解后,闸门数量平均减少了15.81%,深度平均减少了9.66%。
{"title":"Logic Synthesis From Incomplete Specifications Using Disjoint Support Decomposition","authors":"Andrea Costamagna, G. Micheli","doi":"10.1109/prime55000.2022.9816806","DOIUrl":"https://doi.org/10.1109/prime55000.2022.9816806","url":null,"abstract":"Approximate logic synthesis is an emerging field that tolerates errors in the synthesized logic circuits for better optimization quality. Indeed, in many computing problems, the requirement of preserving the exact functionality either results in unnecessary overuse of resources or is hardly possible to meet. The latter case is typical of incompletely specified synthesis problems, targeting the hardware implementation of a Boolean function from a partial knowledge of its care set. The missing elements of the care set are named don’t knows. Previous works identified information theory-based decomposition strategies as powerful synthesis tools. Nonetheless, the definition of an automatic method for approximate synthesis is an open problem, and the approximate counterpart of many logic synthesis techniques is still missing. In this paper, we extend a disjoint support decomposition algorithm to target Boolean functions in the presence of don’t knows. Furthermore, we integrate the decomposition in an information theory-based synthesis flow. Relative experiments on the IWLS2020 benchmarks show that, on average, the addition of the designed decomposition to the flow reduces by 15.81% the number of gates and by 9.66% the depth.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134145199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology 基于100V-GaN集成电路技术的全集成脉冲激光雷达驱动器分析与设计
Pub Date : 2022-06-12 DOI: 10.1109/prime55000.2022.9816827
A. Bettini, T. Cosnier, A. Magnani, O. Syshchyk, M. Borga, S. Decoutere, A. Neviani
The design of an integrated 40A pulsed driver for ToF LiDAR in GaN-on-SOI technology is presented. The produced laser current, generated by a resonant circuit, can achieve sub-nanosecond rise time. The design aims to optimally exploit GaN technology, mitigating source bounce effects and compensating the lack of complementary devices, while preserving reliability. The integration process minimizes parasitics via wafer-level-chip-scale packaging (WLCSP), enhancing the performance of the driver.
介绍了一种基于GaN-on-SOI技术的ToF激光雷达集成40A脉冲驱动器的设计。所产生的激光电流由谐振电路产生,上升时间可达亚纳秒。该设计旨在最佳地利用GaN技术,减轻源弹跳效应并补偿互补器件的缺乏,同时保持可靠性。集成过程通过晶圆级芯片规模封装(WLCSP)最大限度地减少寄生,提高驱动器的性能。
{"title":"Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology","authors":"A. Bettini, T. Cosnier, A. Magnani, O. Syshchyk, M. Borga, S. Decoutere, A. Neviani","doi":"10.1109/prime55000.2022.9816827","DOIUrl":"https://doi.org/10.1109/prime55000.2022.9816827","url":null,"abstract":"The design of an integrated 40A pulsed driver for ToF LiDAR in GaN-on-SOI technology is presented. The produced laser current, generated by a resonant circuit, can achieve sub-nanosecond rise time. The design aims to optimally exploit GaN technology, mitigating source bounce effects and compensating the lack of complementary devices, while preserving reliability. The integration process minimizes parasitics via wafer-level-chip-scale packaging (WLCSP), enhancing the performance of the driver.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134232827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An Ultra Low-Voltage RF Front-end Receiver for IoT Devices 物联网设备的超低电压射频前端接收器
Pub Date : 2022-06-12 DOI: 10.1109/prime55000.2022.9816813
F. Malena, X. Aragonès, D. Mateo, Michele Caselli, A. Boni
This paper presents the design of an RF receiver front-end for IoT application, integrating a low noise amplifier (LNA) and an active mixer. The circuit is designed in 28-nm FDSOI technology, to operate on the ISM 2.4-2.5 GHz band. The inductor-less LNA exploits the parasitic package inductance as resonant load, limiting chip area and costs. The receiver, designed for the stringent requirements of the application, operates with a voltage supply of 0.35 V, and it exhibits in simulation a power consumption below 45 μW. Besides, it achieves a voltage gain of 27.4 dB, a Third Order Input Intercept Point (IIP3) of -26.8dBm, and a noise Figure (NF) of 12.8 dB, with an intermediate frequency (FI) of 2 MHz. The small area of only 0.0021 mm2, combined with the low power consumption and operating voltage, makes the proposed RF receiver well-suited for the IoT application domain.
本文介绍了一种用于物联网应用的射频接收器前端设计,该前端集成了低噪声放大器(LNA)和有源混频器。该电路采用28纳米FDSOI技术设计,可在ISM 2.4-2.5 GHz频段上工作。无电感LNA利用寄生封装电感作为谐振负载,限制了芯片面积和成本。该接收器专为满足应用的严格要求而设计,工作电压为0.35 V,仿真功耗低于45 μW。电压增益为27.4 dB,三阶输入截距(IIP3)为-26.8dBm,噪声系数(NF)为12.8 dB,中频(FI)为2 MHz。仅0.0021 mm2的小面积,加上低功耗和工作电压,使所提出的射频接收器非常适合物联网应用领域。
{"title":"An Ultra Low-Voltage RF Front-end Receiver for IoT Devices","authors":"F. Malena, X. Aragonès, D. Mateo, Michele Caselli, A. Boni","doi":"10.1109/prime55000.2022.9816813","DOIUrl":"https://doi.org/10.1109/prime55000.2022.9816813","url":null,"abstract":"This paper presents the design of an RF receiver front-end for IoT application, integrating a low noise amplifier (LNA) and an active mixer. The circuit is designed in 28-nm FDSOI technology, to operate on the ISM 2.4-2.5 GHz band. The inductor-less LNA exploits the parasitic package inductance as resonant load, limiting chip area and costs. The receiver, designed for the stringent requirements of the application, operates with a voltage supply of 0.35 V, and it exhibits in simulation a power consumption below 45 μW. Besides, it achieves a voltage gain of 27.4 dB, a Third Order Input Intercept Point (IIP3) of -26.8dBm, and a noise Figure (NF) of 12.8 dB, with an intermediate frequency (FI) of 2 MHz. The small area of only 0.0021 mm2, combined with the low power consumption and operating voltage, makes the proposed RF receiver well-suited for the IoT application domain.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131612635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
16- and 64-Point Analog Computing of FFT with Improved Performance and Efficiency 提高FFT性能和效率的16点和64点模拟计算
Pub Date : 2022-06-12 DOI: 10.1109/prime55000.2022.9816825
Jingjing Li, Xingchen Chao, Qiang Li
Fast fourier transform (FFT) is indispensable in multi-carrier radio frequency transform systems, especially in the Orthogonal Frequency Division Multiplexing (OFDM) system. And almost all transform systems implement FFT algorithms in the digital domain. Compared with the realization in digital domain, the implementation in analog domain brings greater advantages in speed and power consumption. This paper proposes a new type of analog Fast fourier transform (AFFT) system, analyzes the algorithm choice and compares the advantages and disadvantages of different algorithms, sets up the system model with non-ideal factors, constructs the specific circuit and compares the performance with different systems.
快速傅里叶变换(FFT)是多载波射频变换系统,特别是正交频分复用(OFDM)系统中不可缺少的技术。几乎所有的变换系统都在数字域实现FFT算法。与数字域的实现相比,模拟域的实现在速度和功耗方面具有更大的优势。本文提出了一种新型的模拟快速傅立叶变换(AFFT)系统,分析了算法的选择,比较了不同算法的优缺点,建立了考虑非理想因素的系统模型,构造了具体的电路,比较了不同系统的性能。
{"title":"16- and 64-Point Analog Computing of FFT with Improved Performance and Efficiency","authors":"Jingjing Li, Xingchen Chao, Qiang Li","doi":"10.1109/prime55000.2022.9816825","DOIUrl":"https://doi.org/10.1109/prime55000.2022.9816825","url":null,"abstract":"Fast fourier transform (FFT) is indispensable in multi-carrier radio frequency transform systems, especially in the Orthogonal Frequency Division Multiplexing (OFDM) system. And almost all transform systems implement FFT algorithms in the digital domain. Compared with the realization in digital domain, the implementation in analog domain brings greater advantages in speed and power consumption. This paper proposes a new type of analog Fast fourier transform (AFFT) system, analyzes the algorithm choice and compares the advantages and disadvantages of different algorithms, sets up the system model with non-ideal factors, constructs the specific circuit and compares the performance with different systems.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131185966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical Model of a Wireless mW-Power and Mbps-Data Transfer System Over a Single Pair of Coils 单对线圈上无线毫瓦功率和mbps数据传输系统的电学模型
Pub Date : 2022-06-12 DOI: 10.1109/prime55000.2022.9816821
David Palomeque-Mangut, A. Schmid, Á. Rodríguez-Vázquez, M. Delgado-Restituto
This paper proposes a system to transfer both mW-power and Mbps-data over an inductive link using a single pair of coils. The system is able to handle a wide range of loads by implementing a load adapter block that divides the operation into two phases: a Power Transfer Phase (PTP) and a Data Transfer Phase (DTP). On the one hand, during PTP, a constant amount of power is drawn from the inductive link, regardless of the current demanded by the load. On the other hand, during DTP, the load is powered with external capacitors, allowing the inductive link to be used for data transmission. With this architecture, intended to be used in a neural implant, power can be delivered to a wide range of loads without affecting the uplink/downlink data communication reliability and with no need of extra coils. Thus, the proposed solution permits minimizing the overall size of the neural implant. An electrical mixed-signal model of the system is described and implemented in MATLAB Simulink through Simscape Electrical and Stateflow toolboxes. Simulations performed on the electrical model of the system are shown and discussed.
本文提出了一种利用单对线圈在感应链路上传输毫瓦功率和mbps数据的系统。该系统能够处理大范围的负载,通过实现负载适配器块,将操作分为两个阶段:功率传输阶段(PTP)和数据传输阶段(DTP)。一方面,在PTP过程中,无论负载需要多少电流,都从感应链路获得恒定的功率。另一方面,在DTP期间,负载由外部电容器供电,允许电感链路用于数据传输。采用这种旨在用于神经植入物的架构,可以在不影响上行/下行数据通信可靠性的情况下向大范围负载输送电力,并且不需要额外的线圈。因此,提出的解决方案允许最小化神经植入物的整体尺寸。通过Simscape电气和Stateflow工具箱,在MATLAB Simulink中描述并实现了系统的电气混合信号模型。对系统的电学模型进行了仿真,并进行了讨论。
{"title":"Electrical Model of a Wireless mW-Power and Mbps-Data Transfer System Over a Single Pair of Coils","authors":"David Palomeque-Mangut, A. Schmid, Á. Rodríguez-Vázquez, M. Delgado-Restituto","doi":"10.1109/prime55000.2022.9816821","DOIUrl":"https://doi.org/10.1109/prime55000.2022.9816821","url":null,"abstract":"This paper proposes a system to transfer both mW-power and Mbps-data over an inductive link using a single pair of coils. The system is able to handle a wide range of loads by implementing a load adapter block that divides the operation into two phases: a Power Transfer Phase (PTP) and a Data Transfer Phase (DTP). On the one hand, during PTP, a constant amount of power is drawn from the inductive link, regardless of the current demanded by the load. On the other hand, during DTP, the load is powered with external capacitors, allowing the inductive link to be used for data transmission. With this architecture, intended to be used in a neural implant, power can be delivered to a wide range of loads without affecting the uplink/downlink data communication reliability and with no need of extra coils. Thus, the proposed solution permits minimizing the overall size of the neural implant. An electrical mixed-signal model of the system is described and implemented in MATLAB Simulink through Simscape Electrical and Stateflow toolboxes. Simulations performed on the electrical model of the system are shown and discussed.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132148236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Runtime Reconfigurable Hardware Accelerator for Energy-Efficient Transposed Convolutions 运行时可重构硬件加速器节能转置卷积
Pub Date : 2022-06-12 DOI: 10.1109/prime55000.2022.9816800
Emanuel Marrazzo, F. Spagnolo, S. Perri
Transposed convolution is a crucial operation in several computer vision applications, including emerging Convolutional Neural Networks for super-resolution, generative adversarial and segmentation tasks. Such algorithms deal with high computational loads and memory requirements, which hinder their implementation in real-time and power-constrained embedded systems. In addition, they may adopt different kernel sizes along the network, thus making the design of flexible yet efficient hardware architectures highly desirable. This paper presents a reconfigurable accelerator able to runtime adapt its computational capabilities to perform transposed convolution with different kernel sizes. When accommodated within the Xilinx XC7Z020 and XC7K410T chips, the proposed design dissipates less than 95 mW at 125MHz and 179 mW at 250MHz, exhibiting a throughput of 1.95 and 3.9 Giga output per second, respectively. Both the implementations overcome state-of-the-art counterparts, achieving an energy efficiency up to 4.4 times higher. When used to accelerate the Fast Super Resolution Convolutional Neural Networks, the novel reconfigurable architecture achieves an energy efficiency at least 23% better than the competitors.
转置卷积是许多计算机视觉应用中的关键操作,包括用于超分辨率,生成对抗和分割任务的新兴卷积神经网络。这种算法处理高计算负载和内存需求,这阻碍了它们在实时和功耗受限的嵌入式系统中的实现。此外,它们可能在网络上采用不同的内核大小,因此非常需要设计灵活而高效的硬件体系结构。本文提出了一种可重构加速器,能够在运行时调整其计算能力来执行不同核大小的转置卷积。在Xilinx XC7Z020和XC7K410T芯片中,所提出的设计在125MHz和250MHz下的功耗分别小于95 mW和179 mW,分别显示每秒1.95和3.9 Giga的输出吞吐量。这两种实现方案都超越了最先进的同类产品,实现了高达4.4倍的能源效率。当用于加速快速超分辨率卷积神经网络时,这种新颖的可重构架构比竞争对手的能效提高了至少23%。
{"title":"Runtime Reconfigurable Hardware Accelerator for Energy-Efficient Transposed Convolutions","authors":"Emanuel Marrazzo, F. Spagnolo, S. Perri","doi":"10.1109/prime55000.2022.9816800","DOIUrl":"https://doi.org/10.1109/prime55000.2022.9816800","url":null,"abstract":"Transposed convolution is a crucial operation in several computer vision applications, including emerging Convolutional Neural Networks for super-resolution, generative adversarial and segmentation tasks. Such algorithms deal with high computational loads and memory requirements, which hinder their implementation in real-time and power-constrained embedded systems. In addition, they may adopt different kernel sizes along the network, thus making the design of flexible yet efficient hardware architectures highly desirable. This paper presents a reconfigurable accelerator able to runtime adapt its computational capabilities to perform transposed convolution with different kernel sizes. When accommodated within the Xilinx XC7Z020 and XC7K410T chips, the proposed design dissipates less than 95 mW at 125MHz and 179 mW at 250MHz, exhibiting a throughput of 1.95 and 3.9 Giga output per second, respectively. Both the implementations overcome state-of-the-art counterparts, achieving an energy efficiency up to 4.4 times higher. When used to accelerate the Fast Super Resolution Convolutional Neural Networks, the novel reconfigurable architecture achieves an energy efficiency at least 23% better than the competitors.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128853860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design Algorithm for N-bit Input Parallel Counters in Application to dSiPM Readout 应用于dSiPM读出的n位输入并行计数器设计算法
Pub Date : 2022-06-12 DOI: 10.1109/prime55000.2022.9816803
Simone Giroletti, L. Ratti, C. Vacchi
This work is concerned with the definition of an algorithm for the design of fast parallel counters suitable for counting 1’s in large arrays of binary signal sources. One example of such systems is the silicon photomultiplier (SiPM), consisting of an array of SPADs (single photon avalanche diodes) each one providing a high output level when hit by a photon. The paper, besides describing the algorithm, will present and discuss a set of computational tools for estimating the design parameters of interest, such as area, power and delay, as a function of the number of cells to read out.
这项工作是关于一个算法的定义,为设计快速并行计数器适合计数1的大型二进制信号源阵列。这种系统的一个例子是硅光电倍增管(SiPM),由一组spad(单光子雪崩二极管)组成,每个spad在被光子击中时提供高输出电平。本文除了描述算法外,还将介绍和讨论一套计算工具,用于估计感兴趣的设计参数,如面积,功率和延迟,作为读出单元数的函数。
{"title":"Design Algorithm for N-bit Input Parallel Counters in Application to dSiPM Readout","authors":"Simone Giroletti, L. Ratti, C. Vacchi","doi":"10.1109/prime55000.2022.9816803","DOIUrl":"https://doi.org/10.1109/prime55000.2022.9816803","url":null,"abstract":"This work is concerned with the definition of an algorithm for the design of fast parallel counters suitable for counting 1’s in large arrays of binary signal sources. One example of such systems is the silicon photomultiplier (SiPM), consisting of an array of SPADs (single photon avalanche diodes) each one providing a high output level when hit by a photon. The paper, besides describing the algorithm, will present and discuss a set of computational tools for estimating the design parameters of interest, such as area, power and delay, as a function of the number of cells to read out.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124305782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Current-Reuse and Split-Voltage Topology for Biomedical Amplifier Arrays 生物医学放大器阵列电流复用与分压拓扑分析
Pub Date : 2022-06-12 DOI: 10.1109/prime55000.2022.9816819
Sebastian Simmich, R. Rieger
This paper presents the analysis of two low-power noise-efficient multichannel amplifier topologies, the current-reuse and the split-voltage amplifier, using lateral BJT input transistors. The calculated noise, noise-efficiency factor (NEF), and power consumption is compared with simulation results in a 350nm CMOS technology. The designed current-reuse amplifier has a NEF of 3.19 with an input referred noise floor of 8.3 nV/√Hz and the split-voltage amplifier has a NEF of 2.2 and a noise floor of 5.7 nV/√Hz.
本文分析了两种低功耗、低噪声的多通道放大器拓扑结构,即电流复用放大器和分压放大器,它们采用横向BJT输入晶体管。计算的噪声、噪声效率因子(NEF)和功耗与350nm CMOS技术的仿真结果进行了比较。所设计的电流复用放大器的NEF为3.19,输入参考本底噪声为8.3 nV/√Hz;分压放大器的NEF为2.2,本底噪声为5.7 nV/√Hz。
{"title":"Analysis of Current-Reuse and Split-Voltage Topology for Biomedical Amplifier Arrays","authors":"Sebastian Simmich, R. Rieger","doi":"10.1109/prime55000.2022.9816819","DOIUrl":"https://doi.org/10.1109/prime55000.2022.9816819","url":null,"abstract":"This paper presents the analysis of two low-power noise-efficient multichannel amplifier topologies, the current-reuse and the split-voltage amplifier, using lateral BJT input transistors. The calculated noise, noise-efficiency factor (NEF), and power consumption is compared with simulation results in a 350nm CMOS technology. The designed current-reuse amplifier has a NEF of 3.19 with an input referred noise floor of 8.3 nV/√Hz and the split-voltage amplifier has a NEF of 2.2 and a noise floor of 5.7 nV/√Hz.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114437673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CMOS driving circuit operating down to 77 K for single-photon emitting diode 用于单光子发射二极管的CMOS驱动电路,工作温度低至77k
Pub Date : 2022-06-12 DOI: 10.1109/prime55000.2022.9816818
Michele Castriotta, Alexander Falbo, Luca Orsenigo, Fabio Olivieri, G. Ferrari
A fully-integrated CMOS driving circuit for single-photon emitting diodes in silicon, optimized for space applications, is presented. The electronics comprises two 10-bit DACs in order to precisely set the on and off voltages of the diode based on the measured temperature by an integrated temperature sensor. A large driving voltage range of 0-5 V guarantees the maximum flexibility in the working temperature range from 77 K to 300 K. The chip also contains a pulse generator, capable of driving the diode with short pulses down to 20 ns triggered by an external signal, which is essential in a single-photon light source. The integrated circuit is realized in standard 150-nm CMOS technology, with a chip area of 1.2 mm2 and a power consumption less than 6mW.
提出了一种针对空间应用进行优化的单光子发射二极管全集成CMOS驱动电路。电子元件包括两个10位dac,以便根据集成温度传感器测量的温度精确设置二极管的导通和关断电压。0-5 V的大驱动电压范围保证了在77 K到300 K的工作温度范围内的最大灵活性。该芯片还包含一个脉冲发生器,能够用外部信号触发的短脉冲驱动二极管至20ns,这在单光子光源中是必不可少的。该集成电路采用标准的150nm CMOS技术实现,芯片面积为1.2 mm2,功耗低于6mW。
{"title":"CMOS driving circuit operating down to 77 K for single-photon emitting diode","authors":"Michele Castriotta, Alexander Falbo, Luca Orsenigo, Fabio Olivieri, G. Ferrari","doi":"10.1109/prime55000.2022.9816818","DOIUrl":"https://doi.org/10.1109/prime55000.2022.9816818","url":null,"abstract":"A fully-integrated CMOS driving circuit for single-photon emitting diodes in silicon, optimized for space applications, is presented. The electronics comprises two 10-bit DACs in order to precisely set the on and off voltages of the diode based on the measured temperature by an integrated temperature sensor. A large driving voltage range of 0-5 V guarantees the maximum flexibility in the working temperature range from 77 K to 300 K. The chip also contains a pulse generator, capable of driving the diode with short pulses down to 20 ns triggered by an external signal, which is essential in a single-photon light source. The integrated circuit is realized in standard 150-nm CMOS technology, with a chip area of 1.2 mm2 and a power consumption less than 6mW.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116339531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)
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