Pub Date : 2024-08-30DOI: 10.1134/s1063782624010044
S. A. Fomichev, V. A. Burdov
Absrtact
—Within the framework of the envelope function approximation, the rates of intraband radiative transitions in silicon nanocrystals with donors are calculated. It is shown that for nanocrystals of sufficiently small sizes (about two nanometers in diameter), the singlet level splitting off from the rest of the spectrum in the conduction band, arising due to the short-range potential of the donor ion, can be sufficiently strong (more than eV for a bismuth atom), which makes emission in the visible range possible. The rates of radiative transitions turn out to be on the order of inverse microseconds. At the same time, in the case of intraband transitions, Auger recombination can be completely eliminated and, thereby, the quantum efficiency of the luminescence process is significantly increased.
{"title":"Singlet-Triplet Radiative Transitions in Silicon Nanocrystals with Shallow Donors","authors":"S. A. Fomichev, V. A. Burdov","doi":"10.1134/s1063782624010044","DOIUrl":"https://doi.org/10.1134/s1063782624010044","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Absrtact</h3><p>—Within the framework of the envelope function approximation, the rates of intraband radiative transitions in silicon nanocrystals with donors are calculated. It is shown that for nanocrystals of sufficiently small sizes (about two nanometers in diameter), the singlet level splitting off from the rest of the spectrum in the conduction band, arising due to the short-range potential of the donor ion, can be sufficiently strong (more than eV for a bismuth atom), which makes emission in the visible range possible. The rates of radiative transitions turn out to be on the order of inverse microseconds. At the same time, in the case of intraband transitions, Auger recombination can be completely eliminated and, thereby, the quantum efficiency of the luminescence process is significantly increased.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1134/s106378262401010x
M. B. Lifshits, V. A. Grabar, N. S. Averkiev
Abstract
The paper theoretically describes the solid effect in the Si:As structure in ESR conditions at low temperatures and in strong magnetic fields. A quantitative comparison of the results of calculating the dynamic polarization of As nuclei in silicon by the Overhauser mechanism and the solid effect with experimental data has been carried out. A good agreement between theory and experiment was demonstrated and the key parameter of the effects, the time of cross-relaxation transitions, was determined which turned out to be approximately 10 s for the As atom.
摘要 本文从理论上描述了硅:砷结构在低温和强磁场 ESR 条件下的固态效应。通过奥弗豪斯机制和固体效应计算硅中 As 原子核的动态极化结果，并与实验数据进行了定量比较。结果表明理论与实验之间存在良好的一致性，并确定了这些效应的关键参数--交叉衰减转变的时间，对于 As 原子而言，该时间约为 10 秒。
{"title":"Parameters of Dynamic Polarization of As Nuclei in Silicon at Low Temperatures and Strong Magnetic Fields","authors":"M. B. Lifshits, V. A. Grabar, N. S. Averkiev","doi":"10.1134/s106378262401010x","DOIUrl":"https://doi.org/10.1134/s106378262401010x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper theoretically describes the solid effect in the Si:As structure in ESR conditions at low temperatures and in strong magnetic fields. A quantitative comparison of the results of calculating the dynamic polarization of As nuclei in silicon by the Overhauser mechanism and the solid effect with experimental data has been carried out. A good agreement between theory and experiment was demonstrated and the key parameter of the effects, the time of cross-relaxation transitions, was determined which turned out to be approximately 10 s for the As atom.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1134/s1063782624010020
V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, Yu. E. Kitaev, S. S. Sharofidinov, A. A. Lebedev, D. Yu. Panov, V. A. Spiridonov, D. A. Bauman, A. E. Romanov, V. V. Kozlovski
Abstract
Proton irradiation of β-Ga2O3 crystals has been established to lead to a significant increase in the amount of Cr3+ ions being active in luminescence. Using angle-resolved luminescence, the features of the spectra of Cr3+ ions were studied. The high sensitivity of photoluminescence spectra and the related selection rules to the local symmetry of Cr3+ ions in the β-Ga2O3 matrix has been found. The results obtained indicate the potential possibility of using β-Ga2O3 crystals as optical dosimeters of proton irradiation.
{"title":"Investigation of the Cr3+ Impurity Luminescence in Proton-Irradiated β-Ga2O3","authors":"V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, Yu. E. Kitaev, S. S. Sharofidinov, A. A. Lebedev, D. Yu. Panov, V. A. Spiridonov, D. A. Bauman, A. E. Romanov, V. V. Kozlovski","doi":"10.1134/s1063782624010020","DOIUrl":"https://doi.org/10.1134/s1063782624010020","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Proton irradiation of β-Ga<sub>2</sub>O<sub>3</sub> crystals has been established to lead to a significant increase in the amount of Cr<sup>3+</sup> ions being active in luminescence. Using angle-resolved luminescence, the features of the spectra of Cr<sup>3+</sup> ions were studied. The high sensitivity of photoluminescence spectra and the related selection rules to the local symmetry of Cr<sup>3+</sup> ions in the β-Ga<sub>2</sub>O<sub>3</sub> matrix has been found. The results obtained indicate the potential possibility of using β-Ga<sub>2</sub>O<sub>3</sub> crystals as optical dosimeters of proton irradiation.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1134/s1063782624010056
M. V. Gavrikov, E. G. Glukhovskoy, N. D. Zhukov
Abstract
An organo-modified ordered layered structure with three-dimensional close packing based on colloidal quantumsized particles (QP) of InSb, PbS, CdSe semiconductors and Langmuir–Blodgett films has been fabricated and studied. According to the current-voltage characteristics (CVC) of single-electron transport in the model of a nanocell with a linear chain QP across the layers, the processes limiting conductivity were established: emission–injection tunneling from a probe into a nanoparticle, motion in a nanoparticle determined by the establishment of an electronic wave process in it, and tunneling through a nanogap between nanoparticles. Quasi-periodic oscillations of the current and resonant peaks of quantum conductivity are observed on the I–V characteristics, which were estimated in the quantum wire model. For an even number of layers (QP, 2, or 4), the I–V characteristics were used to determine the attenuation of size quantization and the decrease in current due to the weak interaction of nanoparticles. With an odd number (3 or 5), the nanochain acts as a single quantum thread with manifestations on the CVC similar to the cases of one QP. In this case, the motion of an electron can be considered as a one-electron charge wave.
{"title":"Quantum Conductivity in Single and Coupled Quantum-Dimensional Particles of Narrow-Gap Semiconductors","authors":"M. V. Gavrikov, E. G. Glukhovskoy, N. D. Zhukov","doi":"10.1134/s1063782624010056","DOIUrl":"https://doi.org/10.1134/s1063782624010056","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>An organo-modified ordered layered structure with three-dimensional close packing based on colloidal quantumsized particles (QP) of InSb, PbS, CdSe semiconductors and Langmuir–Blodgett films has been fabricated and studied. According to the current-voltage characteristics (CVC) of single-electron transport in the model of a nanocell with a linear chain QP across the layers, the processes limiting conductivity were established: emission–injection tunneling from a probe into a nanoparticle, motion in a nanoparticle determined by the establishment of an electronic wave process in it, and tunneling through a nanogap between nanoparticles. Quasi-periodic oscillations of the current and resonant peaks of quantum conductivity are observed on the I–V characteristics, which were estimated in the quantum wire model. For an even number of layers (QP, 2, or 4), the <i>I–V</i> characteristics were used to determine the attenuation of size quantization and the decrease in current due to the weak interaction of nanoparticles. With an odd number (3 or 5), the nanochain acts as a single quantum thread with manifestations on the CVC similar to the cases of one QP. In this case, the motion of an electron can be considered as a one-electron charge wave.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1134/s1063782624010093
A. A. Lebedev, D. A. Malevsky, V. V. Kozlovski, M. E. Levinshtein
Abstract
The processes of long-term (persistent) conductivity relaxation in n-type silicon carbide irradiated with protons in a wide range irradiation temperatures Ti from 23 to 500°C are studied. It is shown for the first time that as a result of the proton irradiation with the fluence of 1014 cm–2, two “competing” long-term processes of conductivity relaxation can be observed. The characteristics of both processes significantly depend on the irradiation temperature and bias, at which the dynamics of conductivity changes is studied. After applying a relatively small constant voltage to the sample, the decrease in current during persistent relaxation process is replaced by persistent increase in current and establishing of the steady state. Both processes are characterized by a very wide range of time constants. When irradiation is performed at room temperature (Ti= 23°C), the time constants range from milliseconds to hundreds of seconds. When the samples are irradiated at elevated temperatures, the time constants are in the range from milliseconds to hundreds of milliseconds. The higher the bias applied, the faster the decrease in current is replaced by its increase. The possible nature of the observed effects is discussed.
摘要 研究了在 23 至 500°C 的宽范围辐照温度 Ti 下用质子辐照 n 型碳化硅的长期（持续）电导弛豫过程。研究首次表明，在 1014 cm-2 的质子辐照下，可以观察到两个 "相互竞争 "的长期电导弛豫过程。这两个过程的特征在很大程度上取决于辐照温度和偏压，在此温度和偏压下，电导率的动态变化被研究出来。在样品上施加相对较小的恒定电压后，持续弛豫过程中的电流下降会被电流的持续增加和稳定状态的建立所取代。这两个过程的时间常数范围都很宽。在室温（Ti = 23°C）下进行辐照时，时间常数从几毫秒到几百秒不等。在高温下辐照样品时，时间常数的范围为毫秒到数百毫秒。施加的偏压越高，电流下降被电流上升取代的速度就越快。本文讨论了所观察到的效应的可能性质。
{"title":"Persistent Relaxation Processes in Proton-Irradiated 4H-SiC","authors":"A. A. Lebedev, D. A. Malevsky, V. V. Kozlovski, M. E. Levinshtein","doi":"10.1134/s1063782624010093","DOIUrl":"https://doi.org/10.1134/s1063782624010093","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The processes of long-term (persistent) conductivity relaxation in <i>n</i>-type silicon carbide irradiated with protons in a wide range irradiation temperatures <i>T</i><sub><i>i</i></sub> from 23 to 500°C are studied. It is shown for the first time that as a result of the proton irradiation with the fluence of 10<sup>14</sup> cm<sup>–2</sup>, two “competing” long-term processes of conductivity relaxation can be observed. The characteristics of both processes significantly depend on the irradiation temperature and bias, at which the dynamics of conductivity changes is studied. After applying a relatively small constant voltage to the sample, the decrease in current during persistent relaxation process is replaced by persistent increase in current and establishing of the steady state. Both processes are characterized by a very wide range of time constants. When irradiation is performed at room temperature (<i>T</i><sub><i>i</i></sub> <i>=</i> 23°C), the time constants range from milliseconds to hundreds of seconds. When the samples are irradiated at elevated temperatures, the time constants are in the range from milliseconds to hundreds of milliseconds. The higher the bias applied, the faster the decrease in current is replaced by its increase. The possible nature of the observed effects is discussed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1134/s1063782624010068
I. A. Gulyaeva, V. V. Petrov
Abstract
Numerical simulation of a solar cell based on the heterojunction of nanocrystalline films of zinc oxide modified with cobalt oxide (Co3O4)1 –x (ZnO)x and cobalt oxide (Co3O4) formed by solid-phase pyrolysis is carried out. The effect of the electron affinity of (Co3O4)1 –x (ZnO)x films, the thickness of the Co3O4 layer and the concentration of acceptors in it on the photoelectric parameters has been studied.
{"title":"Modeling of a Solar Cell Based on Co3O4 and (Co3O4)1 – x(ZnO)x Films","authors":"I. A. Gulyaeva, V. V. Petrov","doi":"10.1134/s1063782624010068","DOIUrl":"https://doi.org/10.1134/s1063782624010068","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Numerical simulation of a solar cell based on the heterojunction of nanocrystalline films of zinc oxide modified with cobalt oxide (Co<sub>3</sub>O<sub>4</sub>)<sub>1 –</sub> <sub><i>x</i></sub> (ZnO)<sub><i>x</i></sub> and cobalt oxide (Co<sub>3</sub>O<sub>4</sub>) formed by solid-phase pyrolysis is carried out. The effect of the electron affinity of (Co<sub>3</sub>O<sub>4</sub>)<sub>1 –</sub> <sub><i>x</i></sub> (ZnO)<sub><i>x</i></sub> films, the thickness of the Co<sub>3</sub>O<sub>4</sub> layer and the concentration of acceptors in it on the photoelectric parameters has been studied.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1134/s1063782624010159
N. P. Stepanov
Abstract
The temperature dependences of the reflection coefficient spectra in the range of effects caused by the resonant behavior of the plasma of free charge carriers of the Bi0.6Sb1.4Te3 crystal, in the temperature dependences of the magnetic susceptibility of which features are observed, are investigated. A change in the shape of the plasma edge and the resulting splitting of the peak of the energy loss function were detected, which allows us to conclude that an electron-plasmon interaction affecting the state of the electronic system has been observed.
{"title":"Convergence of Plasmon and Electron Transition Energies in Crystal Bi0.6Sb1.4Te3","authors":"N. P. Stepanov","doi":"10.1134/s1063782624010159","DOIUrl":"https://doi.org/10.1134/s1063782624010159","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The temperature dependences of the reflection coefficient spectra in the range of effects caused by the resonant behavior of the plasma of free charge carriers of the Bi<sub>0.6</sub>Sb<sub>1.4</sub>Te<sub>3</sub> crystal, in the temperature dependences of the magnetic susceptibility of which features are observed, are investigated. A change in the shape of the plasma edge and the resulting splitting of the peak of the energy loss function were detected, which allows us to conclude that an electron-plasmon interaction affecting the state of the electronic system has been observed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1134/s1063782624010032
M. A. Fadeev, A. A. Yantser, A. A. Dubinov, D. V. Kozlov, V. V. Rumyantsev, N. N. Mikhailov, V. I. Gavrilenko, S. V. Morozov
Abstract
In this work, we studied the spectra of stimulated emission of a waveguide heterostructure with quantum wells based on HgCdTe. In the course of the studies, we used optical pumping, at wavelengths of 2 and 2.3 μm, which are mainly absorbed, in the barriers and quantum wells, respectively. It was found that in both cases optical pumping leads to stimulated emission, with a wavelength corresponding to the energy of the fundamental transition in quantum wells, it being 138 meV. With pumping absorbed in barriers, it was found that a short-wavelength emission line with an energy of 248 meV appeared on the spectra, which can be attributed to transitions involving deep donor levels. At liquid nitrogen temperature, increasing the pumping intensity leads to the appearance of a narrow peak in the short-wave line and, by selecting the pumping parameters, two-frequency generation at 5 and 7 μm wavelengths can be achieved.
{"title":"Two-Frequency Stimulated Emission in Hg(Cd)Te/CdHgTe Heterostructure","authors":"M. A. Fadeev, A. A. Yantser, A. A. Dubinov, D. V. Kozlov, V. V. Rumyantsev, N. N. Mikhailov, V. I. Gavrilenko, S. V. Morozov","doi":"10.1134/s1063782624010032","DOIUrl":"https://doi.org/10.1134/s1063782624010032","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this work, we studied the spectra of stimulated emission of a waveguide heterostructure with quantum wells based on HgCdTe. In the course of the studies, we used optical pumping, at wavelengths of 2 and 2.3 μm, which are mainly absorbed, in the barriers and quantum wells, respectively. It was found that in both cases optical pumping leads to stimulated emission, with a wavelength corresponding to the energy of the fundamental transition in quantum wells, it being 138 meV. With pumping absorbed in barriers, it was found that a short-wavelength emission line with an energy of 248 meV appeared on the spectra, which can be attributed to transitions involving deep donor levels. At liquid nitrogen temperature, increasing the pumping intensity leads to the appearance of a narrow peak in the short-wave line and, by selecting the pumping parameters, two-frequency generation at 5 and 7 μm wavelengths can be achieved.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1134/s1063782624010160
S. V. Zaitsev, V. V. Dremov, V. S. Stolyarov
Abstract
A detailed study of the coherent spin dynamics of photoexcited carriers in a heterostructure with an InGaAs/GaAs quantum well and a δ-Mn-layer separated from the quantum well by a 3–10 nm-thick GaAs spacer indicates its strong non-uniformity in the plane and mesoscopic separation to the regions of carrier localization. Mesoscopic separation with a characteristic scale of ~100–200 nm is also observed using magnetic force microscopy below the Curie temperature of the δ-Mn-layer.
{"title":"Coherent Spin Dynamics in the Nonuniform Ferromagnetic InGaAs/GaAs/δ-Mn Structures","authors":"S. V. Zaitsev, V. V. Dremov, V. S. Stolyarov","doi":"10.1134/s1063782624010160","DOIUrl":"https://doi.org/10.1134/s1063782624010160","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A detailed study of the coherent spin dynamics of photoexcited carriers in a heterostructure with an InGaAs/GaAs quantum well and a δ-Mn-layer separated from the quantum well by a 3–10 nm-thick GaAs spacer indicates its strong non-uniformity in the plane and mesoscopic separation to the regions of carrier localization. Mesoscopic separation with a characteristic scale of ~100–200 nm is also observed using magnetic force microscopy below the Curie temperature of the δ-Mn-layer.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1134/s1063782624010135
A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, M. I. Kondratov, A. E. Grishin, S. O. Slipchenko
Abstract
Radiative characteristics of microstripe laser diode bar in an external resonator based on an aspherical lens and a flat dielectric mirror were Investigated. The bar had total emitting aperture of 185 μm, formed by 10 stripes with a width of 6 μm separated by mesa-grooves. Operation in the external resonator of the entire emitting aperture was characterized by a multimode generation regime with a peak power of 3 W/6 A. Selection of lateral modal structures and transition to a single-mode regime is possible by limiting the number of stripes involved in optical feedback. Dependences of optical mode reconfiguration were studied by introducing limiting slits into the external cavity. It was shown that limiting the emitting aperture involved in the feedback to 65 μm allows us to demonstrate high-order single-mode operation with far-field divergence for the central lobe of 1°.
{"title":"Lateral Mode Selection of Single-Mode Laser Diode Microstripe Bar (1050 nm) in External Cavity","authors":"A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, M. I. Kondratov, A. E. Grishin, S. O. Slipchenko","doi":"10.1134/s1063782624010135","DOIUrl":"https://doi.org/10.1134/s1063782624010135","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Radiative characteristics of microstripe laser diode bar in an external resonator based on an aspherical lens and a flat dielectric mirror were Investigated. The bar had total emitting aperture of 185 μm, formed by 10 stripes with a width of 6 μm separated by mesa-grooves. Operation in the external resonator of the entire emitting aperture was characterized by a multimode generation regime with a peak power of 3 W/6 A. Selection of lateral modal structures and transition to a single-mode regime is possible by limiting the number of stripes involved in optical feedback. Dependences of optical mode reconfiguration were studied by introducing limiting slits into the external cavity. It was shown that limiting the emitting aperture involved in the feedback to 65 μm allows us to demonstrate high-order single-mode operation with far-field divergence for the central lobe of 1°.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
扫码关注我们
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号