首页 > 最新文献

Semiconductors最新文献

英文 中文
Singlet-Triplet Radiative Transitions in Silicon Nanocrystals with Shallow Donors 浅捐献者硅纳米晶体中的单三重辐射转变
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010044
S. A. Fomichev, V. A. Burdov

Absrtact

—Within the framework of the envelope function approximation, the rates of intraband radiative transitions in silicon nanocrystals with donors are calculated. It is shown that for nanocrystals of sufficiently small sizes (about two nanometers in diameter), the singlet level splitting off from the rest of the spectrum in the conduction band, arising due to the short-range potential of the donor ion, can be sufficiently strong (more than eV for a bismuth atom), which makes emission in the visible range possible. The rates of radiative transitions turn out to be on the order of inverse microseconds. At the same time, in the case of intraband transitions, Auger recombination can be completely eliminated and, thereby, the quantum efficiency of the luminescence process is significantly increased.

Absrtact - 在包络函数近似的框架下,计算了带有供体的硅纳米晶体的带内辐射转变速率。结果表明,对于尺寸足够小(直径约为两个纳米)的纳米晶体,由于供体离子的短程电势而产生的与导带光谱其他部分相分离的单线电平可以足够强(对于铋原子超过 eV),这使得在可见光范围内发射成为可能。辐射转变的速率可达到逆微秒量级。同时,在带内跃迁的情况下,可以完全消除奥杰尔重组,从而显著提高发光过程的量子效率。
{"title":"Singlet-Triplet Radiative Transitions in Silicon Nanocrystals with Shallow Donors","authors":"S. A. Fomichev, V. A. Burdov","doi":"10.1134/s1063782624010044","DOIUrl":"https://doi.org/10.1134/s1063782624010044","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Absrtact</h3><p>—Within the framework of the envelope function approximation, the rates of intraband radiative transitions in silicon nanocrystals with donors are calculated. It is shown that for nanocrystals of sufficiently small sizes (about two nanometers in diameter), the singlet level splitting off from the rest of the spectrum in the conduction band, arising due to the short-range potential of the donor ion, can be sufficiently strong (more than eV for a bismuth atom), which makes emission in the visible range possible. The rates of radiative transitions turn out to be on the order of inverse microseconds. At the same time, in the case of intraband transitions, Auger recombination can be completely eliminated and, thereby, the quantum efficiency of the luminescence process is significantly increased.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"17 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the Cr3+ Impurity Luminescence in Proton-Irradiated β-Ga2O3 质子辐照 β-Ga2O3 中 Cr3+ 杂质发光的研究
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010020
V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, Yu. E. Kitaev, S. S. Sharofidinov, A. A. Lebedev, D. Yu. Panov, V. A. Spiridonov, D. A. Bauman, A. E. Romanov, V. V. Kozlovski

Abstract

Proton irradiation of β-Ga2O3 crystals has been established to lead to a significant increase in the amount of Cr3+ ions being active in luminescence. Using angle-resolved luminescence, the features of the spectra of Cr3+ ions were studied. The high sensitivity of photoluminescence spectra and the related selection rules to the local symmetry of Cr3+ ions in the β-Ga2O3 matrix has been found. The results obtained indicate the potential possibility of using β-Ga2O3 crystals as optical dosimeters of proton irradiation.

摘要 β-Ga2O3晶体经质子辐照后,发光中活跃的Cr3+离子数量显著增加。利用角度分辨发光法研究了 Cr3+ 离子的光谱特征。研究发现,光致发光光谱和相关选择规则对 β-Ga2O3 基体中 Cr3+ 离子的局部对称性非常敏感。研究结果表明,将 β-Ga2O3 晶体用作质子辐照的光学剂量计具有潜在的可能性。
{"title":"Investigation of the Cr3+ Impurity Luminescence in Proton-Irradiated β-Ga2O3","authors":"V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, Yu. E. Kitaev, S. S. Sharofidinov, A. A. Lebedev, D. Yu. Panov, V. A. Spiridonov, D. A. Bauman, A. E. Romanov, V. V. Kozlovski","doi":"10.1134/s1063782624010020","DOIUrl":"https://doi.org/10.1134/s1063782624010020","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Proton irradiation of β-Ga<sub>2</sub>O<sub>3</sub> crystals has been established to lead to a significant increase in the amount of Cr<sup>3+</sup> ions being active in luminescence. Using angle-resolved luminescence, the features of the spectra of Cr<sup>3+</sup> ions were studied. The high sensitivity of photoluminescence spectra and the related selection rules to the local symmetry of Cr<sup>3+</sup> ions in the β-Ga<sub>2</sub>O<sub>3</sub> matrix has been found. The results obtained indicate the potential possibility of using β-Ga<sub>2</sub>O<sub>3</sub> crystals as optical dosimeters of proton irradiation.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"22 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parameters of Dynamic Polarization of As Nuclei in Silicon at Low Temperatures and Strong Magnetic Fields 低温和强磁场条件下硅中砷核的动态极化参数
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-30 DOI: 10.1134/s106378262401010x
M. B. Lifshits, V. A. Grabar, N. S. Averkiev

Abstract

The paper theoretically describes the solid effect in the Si:As structure in ESR conditions at low temperatures and in strong magnetic fields. A quantitative comparison of the results of calculating the dynamic polarization of As nuclei in silicon by the Overhauser mechanism and the solid effect with experimental data has been carried out. A good agreement between theory and experiment was demonstrated and the key parameter of the effects, the time of cross-relaxation transitions, was determined which turned out to be approximately 10 s for the As atom.

摘要 本文从理论上描述了硅:砷结构在低温和强磁场 ESR 条件下的固态效应。通过奥弗豪斯机制和固体效应计算硅中 As 原子核的动态极化结果,并与实验数据进行了定量比较。结果表明理论与实验之间存在良好的一致性,并确定了这些效应的关键参数--交叉衰减转变的时间,对于 As 原子而言,该时间约为 10 秒。
{"title":"Parameters of Dynamic Polarization of As Nuclei in Silicon at Low Temperatures and Strong Magnetic Fields","authors":"M. B. Lifshits, V. A. Grabar, N. S. Averkiev","doi":"10.1134/s106378262401010x","DOIUrl":"https://doi.org/10.1134/s106378262401010x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper theoretically describes the solid effect in the Si:As structure in ESR conditions at low temperatures and in strong magnetic fields. A quantitative comparison of the results of calculating the dynamic polarization of As nuclei in silicon by the Overhauser mechanism and the solid effect with experimental data has been carried out. A good agreement between theory and experiment was demonstrated and the key parameter of the effects, the time of cross-relaxation transitions, was determined which turned out to be approximately 10 s for the As atom.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum Conductivity in Single and Coupled Quantum-Dimensional Particles of Narrow-Gap Semiconductors 窄隙半导体单个和耦合量子维粒子的量子传导性
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010056
M. V. Gavrikov, E. G. Glukhovskoy, N. D. Zhukov

Abstract

An organo-modified ordered layered structure with three-dimensional close packing based on colloidal quantumsized particles (QP) of InSb, PbS, CdSe semiconductors and Langmuir–Blodgett films has been fabricated and studied. According to the current-voltage characteristics (CVC) of single-electron transport in the model of a nanocell with a linear chain QP across the layers, the processes limiting conductivity were established: emission–injection tunneling from a probe into a nanoparticle, motion in a nanoparticle determined by the establishment of an electronic wave process in it, and tunneling through a nanogap between nanoparticles. Quasi-periodic oscillations of the current and resonant peaks of quantum conductivity are observed on the I–V characteristics, which were estimated in the quantum wire model. For an even number of layers (QP, 2, or 4), the I–V characteristics were used to determine the attenuation of size quantization and the decrease in current due to the weak interaction of nanoparticles. With an odd number (3 or 5), the nanochain acts as a single quantum thread with manifestations on the CVC similar to the cases of one QP. In this case, the motion of an electron can be considered as a one-electron charge wave.

摘要 以 InSb、PbS、CdSe 半导体的胶体量子化颗粒(QP)和 Langmuir-Blodgett 薄膜为基础,制备并研究了具有三维紧密堆积的有机修饰有序层状结构。根据具有跨层线性链 QP 的纳米电池模型中单电子传输的电流-电压特性 (CVC),确定了限制导电性的过程:从探针到纳米粒子的发射-注入隧穿、由纳米粒子中电子波过程的建立决定的纳米粒子中的运动以及通过纳米粒子之间的纳米间隙的隧穿。根据量子线模型的估算,在 I-V 特性上可以观察到电流的准周期振荡和量子电导率的共振峰。对于偶数层(QP、2 或 4),I-V 特性用于确定尺寸量子化的衰减和纳米粒子弱相互作用导致的电流下降。当数量为奇数(3 或 5)时,纳米链就像一条量子线,在 CVC 上的表现与一个 QP 的情况类似。在这种情况下,电子的运动可视为单电子电荷波。
{"title":"Quantum Conductivity in Single and Coupled Quantum-Dimensional Particles of Narrow-Gap Semiconductors","authors":"M. V. Gavrikov, E. G. Glukhovskoy, N. D. Zhukov","doi":"10.1134/s1063782624010056","DOIUrl":"https://doi.org/10.1134/s1063782624010056","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>An organo-modified ordered layered structure with three-dimensional close packing based on colloidal quantumsized particles (QP) of InSb, PbS, CdSe semiconductors and Langmuir–Blodgett films has been fabricated and studied. According to the current-voltage characteristics (CVC) of single-electron transport in the model of a nanocell with a linear chain QP across the layers, the processes limiting conductivity were established: emission–injection tunneling from a probe into a nanoparticle, motion in a nanoparticle determined by the establishment of an electronic wave process in it, and tunneling through a nanogap between nanoparticles. Quasi-periodic oscillations of the current and resonant peaks of quantum conductivity are observed on the I–V characteristics, which were estimated in the quantum wire model. For an even number of layers (QP, 2, or 4), the <i>I–V</i> characteristics were used to determine the attenuation of size quantization and the decrease in current due to the weak interaction of nanoparticles. With an odd number (3 or 5), the nanochain acts as a single quantum thread with manifestations on the CVC similar to the cases of one QP. In this case, the motion of an electron can be considered as a one-electron charge wave.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"29 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Persistent Relaxation Processes in Proton-Irradiated 4H-SiC 质子辐照 4H-SiC 中的持续弛豫过程
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010093
A. A. Lebedev, D. A. Malevsky, V. V. Kozlovski, M. E. Levinshtein

Abstract

The processes of long-term (persistent) conductivity relaxation in n-type silicon carbide irradiated with protons in a wide range irradiation temperatures Ti from 23 to 500°C are studied. It is shown for the first time that as a result of the proton irradiation with the fluence of 1014 cm–2, two “competing” long-term processes of conductivity relaxation can be observed. The characteristics of both processes significantly depend on the irradiation temperature and bias, at which the dynamics of conductivity changes is studied. After applying a relatively small constant voltage to the sample, the decrease in current during persistent relaxation process is replaced by persistent increase in current and establishing of the steady state. Both processes are characterized by a very wide range of time constants. When irradiation is performed at room temperature (Ti = 23°C), the time constants range from milliseconds to hundreds of seconds. When the samples are irradiated at elevated temperatures, the time constants are in the range from milliseconds to hundreds of milliseconds. The higher the bias applied, the faster the decrease in current is replaced by its increase. The possible nature of the observed effects is discussed.

摘要 研究了在 23 至 500°C 的宽范围辐照温度 Ti 下用质子辐照 n 型碳化硅的长期(持续)电导弛豫过程。研究首次表明,在 1014 cm-2 的质子辐照下,可以观察到两个 "相互竞争 "的长期电导弛豫过程。这两个过程的特征在很大程度上取决于辐照温度和偏压,在此温度和偏压下,电导率的动态变化被研究出来。在样品上施加相对较小的恒定电压后,持续弛豫过程中的电流下降会被电流的持续增加和稳定状态的建立所取代。这两个过程的时间常数范围都很宽。在室温(Ti = 23°C)下进行辐照时,时间常数从几毫秒到几百秒不等。在高温下辐照样品时,时间常数的范围为毫秒到数百毫秒。施加的偏压越高,电流下降被电流上升取代的速度就越快。本文讨论了所观察到的效应的可能性质。
{"title":"Persistent Relaxation Processes in Proton-Irradiated 4H-SiC","authors":"A. A. Lebedev, D. A. Malevsky, V. V. Kozlovski, M. E. Levinshtein","doi":"10.1134/s1063782624010093","DOIUrl":"https://doi.org/10.1134/s1063782624010093","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The processes of long-term (persistent) conductivity relaxation in <i>n</i>-type silicon carbide irradiated with protons in a wide range irradiation temperatures <i>T</i><sub><i>i</i></sub> from 23 to 500°C are studied. It is shown for the first time that as a result of the proton irradiation with the fluence of 10<sup>14</sup> cm<sup>–2</sup>, two “competing” long-term processes of conductivity relaxation can be observed. The characteristics of both processes significantly depend on the irradiation temperature and bias, at which the dynamics of conductivity changes is studied. After applying a relatively small constant voltage to the sample, the decrease in current during persistent relaxation process is replaced by persistent increase in current and establishing of the steady state. Both processes are characterized by a very wide range of time constants. When irradiation is performed at room temperature (<i>T</i><sub><i>i</i></sub> <i>=</i> 23°C), the time constants range from milliseconds to hundreds of seconds. When the samples are irradiated at elevated temperatures, the time constants are in the range from milliseconds to hundreds of milliseconds. The higher the bias applied, the faster the decrease in current is replaced by its increase. The possible nature of the observed effects is discussed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"7 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of a Solar Cell Based on Co3O4 and (Co3O4)1 – x(ZnO)x Films 基于 Co3O4 和 (Co3O4)1 - x(ZnO)x 薄膜的太阳能电池建模
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010068
I. A. Gulyaeva, V. V. Petrov

Abstract

Numerical simulation of a solar cell based on the heterojunction of nanocrystalline films of zinc oxide modified with cobalt oxide (Co3O4)1 – x (ZnO)x and cobalt oxide (Co3O4) formed by solid-phase pyrolysis is carried out. The effect of the electron affinity of (Co3O4)1 – x (ZnO)x films, the thickness of the Co3O4 layer and the concentration of acceptors in it on the photoelectric parameters has been studied.

摘要 数值模拟了一种太阳能电池,该电池基于固相热解形成的氧化钴(Co3O4)1 - x(ZnO)x 和氧化钴(Co3O4)修饰的纳米氧化锌薄膜的异质结。研究了 (Co3O4)1 - x (ZnO)x 薄膜的电子亲和力、Co3O4 层的厚度以及其中的受体浓度对光电参数的影响。
{"title":"Modeling of a Solar Cell Based on Co3O4 and (Co3O4)1 – x(ZnO)x Films","authors":"I. A. Gulyaeva, V. V. Petrov","doi":"10.1134/s1063782624010068","DOIUrl":"https://doi.org/10.1134/s1063782624010068","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Numerical simulation of a solar cell based on the heterojunction of nanocrystalline films of zinc oxide modified with cobalt oxide (Co<sub>3</sub>O<sub>4</sub>)<sub>1 –</sub> <sub><i>x</i></sub> (ZnO)<sub><i>x</i></sub> and cobalt oxide (Co<sub>3</sub>O<sub>4</sub>) formed by solid-phase pyrolysis is carried out. The effect of the electron affinity of (Co<sub>3</sub>O<sub>4</sub>)<sub>1 –</sub> <sub><i>x</i></sub> (ZnO)<sub><i>x</i></sub> films, the thickness of the Co<sub>3</sub>O<sub>4</sub> layer and the concentration of acceptors in it on the photoelectric parameters has been studied.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"1 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-Frequency Stimulated Emission in Hg(Cd)Te/CdHgTe Heterostructure 碲镉汞异质结构中的双频受激发射
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010032
M. A. Fadeev, A. A. Yantser, A. A. Dubinov, D. V. Kozlov, V. V. Rumyantsev, N. N. Mikhailov, V. I. Gavrilenko, S. V. Morozov

Abstract

In this work, we studied the spectra of stimulated emission of a waveguide heterostructure with quantum wells based on HgCdTe. In the course of the studies, we used optical pumping, at wavelengths of 2 and 2.3 μm, which are mainly absorbed, in the barriers and quantum wells, respectively. It was found that in both cases optical pumping leads to stimulated emission, with a wavelength corresponding to the energy of the fundamental transition in quantum wells, it being 138 meV. With pumping absorbed in barriers, it was found that a short-wavelength emission line with an energy of 248 meV appeared on the spectra, which can be attributed to transitions involving deep donor levels. At liquid nitrogen temperature, increasing the pumping intensity leads to the appearance of a narrow peak in the short-wave line and, by selecting the pumping parameters, two-frequency generation at 5 and 7 μm wavelengths can be achieved.

摘要 在这项工作中,我们研究了基于 HgCdTe 的带有量子阱的波导异质结构的受激发射光谱。在研究过程中,我们使用了光泵浦,波长分别为 2 μm 和 2.3 μm,这两个波长主要被势垒和量子阱吸收。研究发现,在这两种情况下,光泵浦都会导致受激发射,其波长与量子阱中基态转变的能量(138 meV)相对应。当泵浦在势垒中被吸收时,发现光谱上出现了一条能量为 248 meV 的短波发射线,这可以归因于涉及深供体水平的跃迁。在液氮温度下,增加泵浦强度会导致短波线出现一个窄峰,通过选择泵浦参数,可以实现 5 和 7 μm 波长的双频产生。
{"title":"Two-Frequency Stimulated Emission in Hg(Cd)Te/CdHgTe Heterostructure","authors":"M. A. Fadeev, A. A. Yantser, A. A. Dubinov, D. V. Kozlov, V. V. Rumyantsev, N. N. Mikhailov, V. I. Gavrilenko, S. V. Morozov","doi":"10.1134/s1063782624010032","DOIUrl":"https://doi.org/10.1134/s1063782624010032","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this work, we studied the spectra of stimulated emission of a waveguide heterostructure with quantum wells based on HgCdTe. In the course of the studies, we used optical pumping, at wavelengths of 2 and 2.3 μm, which are mainly absorbed, in the barriers and quantum wells, respectively. It was found that in both cases optical pumping leads to stimulated emission, with a wavelength corresponding to the energy of the fundamental transition in quantum wells, it being 138 meV. With pumping absorbed in barriers, it was found that a short-wavelength emission line with an energy of 248 meV appeared on the spectra, which can be attributed to transitions involving deep donor levels. At liquid nitrogen temperature, increasing the pumping intensity leads to the appearance of a narrow peak in the short-wave line and, by selecting the pumping parameters, two-frequency generation at 5 and 7 μm wavelengths can be achieved.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Convergence of Plasmon and Electron Transition Energies in Crystal Bi0.6Sb1.4Te3 晶体 Bi0.6Sb1.4Te3 中等离子体和电子转变能的趋同
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010159
N. P. Stepanov

Abstract

The temperature dependences of the reflection coefficient spectra in the range of effects caused by the resonant behavior of the plasma of free charge carriers of the Bi0.6Sb1.4Te3 crystal, in the temperature dependences of the magnetic susceptibility of which features are observed, are investigated. A change in the shape of the plasma edge and the resulting splitting of the peak of the energy loss function were detected, which allows us to conclude that an electron-plasmon interaction affecting the state of the electronic system has been observed.

摘要 研究了 Bi0.6Sb1.4Te3 晶体自由电荷载流子等离子体共振行为引起的效应范围内反射系数光谱的温度相关性,在磁感应强度的温度相关性中观察到了这些特征。探测到等离子体边缘形状的变化以及由此产生的能量损失函数峰值的分裂,从而得出结论:已经观察到影响电子系统状态的电子-等离子相互作用。
{"title":"Convergence of Plasmon and Electron Transition Energies in Crystal Bi0.6Sb1.4Te3","authors":"N. P. Stepanov","doi":"10.1134/s1063782624010159","DOIUrl":"https://doi.org/10.1134/s1063782624010159","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The temperature dependences of the reflection coefficient spectra in the range of effects caused by the resonant behavior of the plasma of free charge carriers of the Bi<sub>0.6</sub>Sb<sub>1.4</sub>Te<sub>3</sub> crystal, in the temperature dependences of the magnetic susceptibility of which features are observed, are investigated. A change in the shape of the plasma edge and the resulting splitting of the peak of the energy loss function were detected, which allows us to conclude that an electron-plasmon interaction affecting the state of the electronic system has been observed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"58 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coherent Spin Dynamics in the Nonuniform Ferromagnetic InGaAs/GaAs/δ-Mn Structures 非均匀铁磁性 InGaAs/GaAs/δ-Mn 结构中的相干自旋动力学
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010160
S. V. Zaitsev, V. V. Dremov, V. S. Stolyarov

Abstract

A detailed study of the coherent spin dynamics of photoexcited carriers in a heterostructure with an InGaAs/GaAs quantum well and a δ-Mn-layer separated from the quantum well by a 3–10 nm-thick GaAs spacer indicates its strong non-uniformity in the plane and mesoscopic separation to the regions of carrier localization. Mesoscopic separation with a characteristic scale of ~100–200 nm is also observed using magnetic force microscopy below the Curie temperature of the δ-Mn-layer.

摘要:对InGaAs/GaAs量子阱异质结构中光激发载流子相干自旋动力学的详细研究表明,该异质结构中的InGaAs/GaAs量子阱和由δ-Mn层与量子阱隔开的3-10 nm厚的GaAs间隔层在平面上具有很强的不均匀性,载流子定位区域之间存在介观分离。在δ-锰层居里温度以下,使用磁力显微镜也能观察到介观分离,其特征尺度为 ~100-200 nm。
{"title":"Coherent Spin Dynamics in the Nonuniform Ferromagnetic InGaAs/GaAs/δ-Mn Structures","authors":"S. V. Zaitsev, V. V. Dremov, V. S. Stolyarov","doi":"10.1134/s1063782624010160","DOIUrl":"https://doi.org/10.1134/s1063782624010160","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A detailed study of the coherent spin dynamics of photoexcited carriers in a heterostructure with an InGaAs/GaAs quantum well and a δ-Mn-layer separated from the quantum well by a 3–10 nm-thick GaAs spacer indicates its strong non-uniformity in the plane and mesoscopic separation to the regions of carrier localization. Mesoscopic separation with a characteristic scale of ~100–200 nm is also observed using magnetic force microscopy below the Curie temperature of the δ-Mn-layer.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"45 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lateral Mode Selection of Single-Mode Laser Diode Microstripe Bar (1050 nm) in External Cavity 外腔中单模激光二极管微纹条(1050 nm)的横向模式选择
IF 0.7 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010135
A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, M. I. Kondratov, A. E. Grishin, S. O. Slipchenko

Abstract

Radiative characteristics of microstripe laser diode bar in an external resonator based on an aspherical lens and a flat dielectric mirror were Investigated. The bar had total emitting aperture of 185 μm, formed by 10 stripes with a width of 6 μm separated by mesa-grooves. Operation in the external resonator of the entire emitting aperture was characterized by a multimode generation regime with a peak power of 3 W/6 A. Selection of lateral modal structures and transition to a single-mode regime is possible by limiting the number of stripes involved in optical feedback. Dependences of optical mode reconfiguration were studied by introducing limiting slits into the external cavity. It was shown that limiting the emitting aperture involved in the feedback to 65 μm allows us to demonstrate high-order single-mode operation with far-field divergence for the central lobe of 1°.

摘要 研究了微条纹激光二极管棒在基于非球面透镜和平面介质镜的外部谐振器中的辐射特性。条形激光二极管的总发射孔径为 185 μm,由 10 条宽度为 6 μm 的条纹组成,条纹之间有间隙。通过限制参与光反馈的条纹数量,可以选择横向模态结构并过渡到单模态。通过在外部腔体中引入限制狭缝,研究了光模式重构的相关性。结果表明,将参与反馈的发射孔径限制在 65 μm 时,我们可以演示中心叶远场发散为 1° 的高阶单模运行。
{"title":"Lateral Mode Selection of Single-Mode Laser Diode Microstripe Bar (1050 nm) in External Cavity","authors":"A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, M. I. Kondratov, A. E. Grishin, S. O. Slipchenko","doi":"10.1134/s1063782624010135","DOIUrl":"https://doi.org/10.1134/s1063782624010135","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Radiative characteristics of microstripe laser diode bar in an external resonator based on an aspherical lens and a flat dielectric mirror were Investigated. The bar had total emitting aperture of 185 μm, formed by 10 stripes with a width of 6 μm separated by mesa-grooves. Operation in the external resonator of the entire emitting aperture was characterized by a multimode generation regime with a peak power of 3 W/6 A. Selection of lateral modal structures and transition to a single-mode regime is possible by limiting the number of stripes involved in optical feedback. Dependences of optical mode reconfiguration were studied by introducing limiting slits into the external cavity. It was shown that limiting the emitting aperture involved in the feedback to 65 μm allows us to demonstrate high-order single-mode operation with far-field divergence for the central lobe of 1°.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"17 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Semiconductors
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1