Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328669
L. Ding, Wei Chen, Tan Wang, Yinhong Luo, Fengqi Zhang, Rongmei Chen, Xiaoyu Pan, Huabo Sun, Lei Chen
Bipolar amplification effects and feedback of well potential modulation on the primary charge collection were modeled and integrated into bias-dependent SEE model with layout information considered. Through monitoring the well potential evolution with time, establishing the relationship between bipolar amplification current and well potential other than using the parameter current gain, and establishing the relationship between collection current and well potential, phenomena including the pulse quenching in inverter chain, the pulse width increase with reduced well contact area, the upset vulnerability evolution with various well contact areas, etc, can be simulated and evaluated.
{"title":"Circuit-level Prediction of Charge Sharing Transients and Upsets for Various Well Contacts","authors":"L. Ding, Wei Chen, Tan Wang, Yinhong Luo, Fengqi Zhang, Rongmei Chen, Xiaoyu Pan, Huabo Sun, Lei Chen","doi":"10.1109/RADECS45761.2018.9328669","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328669","url":null,"abstract":"Bipolar amplification effects and feedback of well potential modulation on the primary charge collection were modeled and integrated into bias-dependent SEE model with layout information considered. Through monitoring the well potential evolution with time, establishing the relationship between bipolar amplification current and well potential other than using the parameter current gain, and establishing the relationship between collection current and well potential, phenomena including the pulse quenching in inverter chain, the pulse width increase with reduced well contact area, the upset vulnerability evolution with various well contact areas, etc, can be simulated and evaluated.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125707764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328720
A. Barnard, F. Smit, R. Neveling, W.H. Steyn
The development and verification of the Single-Event-Effect (SEE) Proton Testing of electronic systems facility at iThemba LABS using a novel Beam Loss Monitor (BLM) based dosimetry system is presented. This is the first high-energy proton SEE testing facility in Africa and the Southern hemisphere.
{"title":"SEE Proton Testing Facility at iThemba LABS","authors":"A. Barnard, F. Smit, R. Neveling, W.H. Steyn","doi":"10.1109/RADECS45761.2018.9328720","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328720","url":null,"abstract":"The development and verification of the Single-Event-Effect (SEE) Proton Testing of electronic systems facility at iThemba LABS using a novel Beam Loss Monitor (BLM) based dosimetry system is presented. This is the first high-energy proton SEE testing facility in Africa and the Southern hemisphere.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"56 17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124316363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Heavy Ion SEL/SEE Testing of Microsemi Integrated Motor Controller LX7720","authors":"M. Sureau, Russell Stevens, M. Leuenberger, N. Rezzak, Dorian Johnson","doi":"10.1109/RADECS45761.2018.9328681","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328681","url":null,"abstract":"The initial Heavy Ion SEL/SEE testing results of the Microsemi radiation hardened analog mixed-signal motor controller IC, the LX7720, are presented.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128195461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328672
A. Hudson, A. Scofield, W. Lotshaw, S. Hubbard, M. Slocum, B. Liang, M. Debnath, B. Juang, D. Huffaker
As part of a study on radiation effects in optoelectronic materials, we exposed a series of AIGaAs/GaAs double heterostructures grown by molecular beam epitaxy and metalorganic chemical vapor deposition to electron and proton radiation. The active regions of the test articles were either p-, n-, or unintentionally doped. Steady state and time resolved photoluminescence spectroscopy were used to characterize radiation induced changes to the band structure and carrier dynamics. The effects of electron radiation on low temperature photoluminescence spectra and room temperature carrier dynamics varied with dopant type and density. Steady-state photoluminescence reveals distinct proton exposure effects for p-type materials grown by molecular beam epitaxy compared to n-type structures. Both the steady state and time resolved results suggest that n-type materials are more radiation hard to the effects of 1 MeV electrons than p-type materials.
{"title":"Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures","authors":"A. Hudson, A. Scofield, W. Lotshaw, S. Hubbard, M. Slocum, B. Liang, M. Debnath, B. Juang, D. Huffaker","doi":"10.1109/RADECS45761.2018.9328672","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328672","url":null,"abstract":"As part of a study on radiation effects in optoelectronic materials, we exposed a series of AIGaAs/GaAs double heterostructures grown by molecular beam epitaxy and metalorganic chemical vapor deposition to electron and proton radiation. The active regions of the test articles were either p-, n-, or unintentionally doped. Steady state and time resolved photoluminescence spectroscopy were used to characterize radiation induced changes to the band structure and carrier dynamics. The effects of electron radiation on low temperature photoluminescence spectra and room temperature carrier dynamics varied with dopant type and density. Steady-state photoluminescence reveals distinct proton exposure effects for p-type materials grown by molecular beam epitaxy compared to n-type structures. Both the steady state and time resolved results suggest that n-type materials are more radiation hard to the effects of 1 MeV electrons than p-type materials.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128216394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328716
D. Bamber, K. Ryden, D. Tye, C. Underwood
This paper describes the development and testing of a new radiation monitor for MEO and GEO orbits utilizing novel design techniques including dual-footprinting of COTS and radiation hardened components. Its sensor suite consists of proton and heavy ion particle telescopes, ionizing dose sensors and current sensing plates for deep dielectric charge monitoring.
{"title":"Development and Calibration of a New, Low Cost Radiation Monitor for High Radiation Orbits","authors":"D. Bamber, K. Ryden, D. Tye, C. Underwood","doi":"10.1109/RADECS45761.2018.9328716","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328716","url":null,"abstract":"This paper describes the development and testing of a new radiation monitor for MEO and GEO orbits utilizing novel design techniques including dual-footprinting of COTS and radiation hardened components. Its sensor suite consists of proton and heavy ion particle telescopes, ionizing dose sensors and current sensing plates for deep dielectric charge monitoring.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134125769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328725
L. Tambara, J. Andersson, F. Sturesson, J. Jalle, R. Sharp
The Cobham Gaisler LEON4FT is a fault-tolerant synthesizable VHDL model of a 32-bit processor core, compliant with the SPARC V8 architecture. The model is highly configurable and particularly suitable for System-on-Chip (SoC) designs. The processor is the basis of the Cobham Gaisler GR740, a radiation-tolerant SoC that features a quad-core LEON4FT processor, as well as several other peripherals. The Microsemi RTG4 Field Programmable Gate Array (FPGA) is fabricated using a low-power, 65 nm CMOS Flash technology, which is known to provide higher immunity to radiation-induced errors than SRAM-based FPGAs. This work performs a dynamic test of RTG4 FPGA embedding a LEON4FT-based SoC under heavy ion-induced single event effects. The results obtained demonstrate the effectiveness of the fault-tolerant techniques adopted at both device and design levels in a real application.
{"title":"Dynamic Heavy Ion SEE Testing of Microsemi RTG4 Flash-based FPGA Embedding a LEON4FT-based SoC","authors":"L. Tambara, J. Andersson, F. Sturesson, J. Jalle, R. Sharp","doi":"10.1109/RADECS45761.2018.9328725","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328725","url":null,"abstract":"The Cobham Gaisler LEON4FT is a fault-tolerant synthesizable VHDL model of a 32-bit processor core, compliant with the SPARC V8 architecture. The model is highly configurable and particularly suitable for System-on-Chip (SoC) designs. The processor is the basis of the Cobham Gaisler GR740, a radiation-tolerant SoC that features a quad-core LEON4FT processor, as well as several other peripherals. The Microsemi RTG4 Field Programmable Gate Array (FPGA) is fabricated using a low-power, 65 nm CMOS Flash technology, which is known to provide higher immunity to radiation-induced errors than SRAM-based FPGAs. This work performs a dynamic test of RTG4 FPGA embedding a LEON4FT-based SoC under heavy ion-induced single event effects. The results obtained demonstrate the effectiveness of the fault-tolerant techniques adopted at both device and design levels in a real application.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"329 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133196297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/radecs45761.2018.9328728
{"title":"The RADECS 2018 Awards","authors":"","doi":"10.1109/radecs45761.2018.9328728","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328728","url":null,"abstract":"","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115859912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328654
P. Zimin, E. Mrozovskaya, V. Anashin, P. Chubunov, O. V. Meschurov, R. G. Useinov, V. M. Uzhegov, A. G. Baz, G. Zebrev
It was shown that enhanced charge trapping takes place in thick gate dielectrics of p-MOS and MNOS dosimeters at low dose rates (ELDRS). The results are shown to be consistent with the previously proposed model.
{"title":"ELDRS in p-MOS and p-MNOS Based RAD-FETs with Thick Gate Insulators: Experiment and Simulation","authors":"P. Zimin, E. Mrozovskaya, V. Anashin, P. Chubunov, O. V. Meschurov, R. G. Useinov, V. M. Uzhegov, A. G. Baz, G. Zebrev","doi":"10.1109/RADECS45761.2018.9328654","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328654","url":null,"abstract":"It was shown that enhanced charge trapping takes place in thick gate dielectrics of p-MOS and MNOS dosimeters at low dose rates (ELDRS). The results are shown to be consistent with the previously proposed model.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114592359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328710
P. Casolaro, G. Breglio, S. Buontempo, L. Campajola, M. Consales, A. Cusano, A. Cutolo, F. Di Capua, F. Fienga, P. Vaiano
Radiochromic film dosimetry is a technique particularly suitable for dose measurements of radiation hardness assurance tests. The main characteristics of radiochromic films are the precise, accurate and permanent dose values, ease of handling and data analysis, high spatial resolution and wide range of dose. However, measurements of the trend of the dose in time with radiochromic films are very difficult by means of commercial read-out tools. In this work we propose a new method, for which a National Patent was filed, for the determination of the dose in real-time and by remote control with radiochromic films. This method based on optoelectronic instrumentation, makes radiochromic film dosimetry an ideal technique for radiation hardness quality assurance tests.
{"title":"An innovative dosimetry method for accurate and real time dose assessment for Radiation Hardness Assurance tests","authors":"P. Casolaro, G. Breglio, S. Buontempo, L. Campajola, M. Consales, A. Cusano, A. Cutolo, F. Di Capua, F. Fienga, P. Vaiano","doi":"10.1109/RADECS45761.2018.9328710","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328710","url":null,"abstract":"Radiochromic film dosimetry is a technique particularly suitable for dose measurements of radiation hardness assurance tests. The main characteristics of radiochromic films are the precise, accurate and permanent dose values, ease of handling and data analysis, high spatial resolution and wide range of dose. However, measurements of the trend of the dose in time with radiochromic films are very difficult by means of commercial read-out tools. In this work we propose a new method, for which a National Patent was filed, for the determination of the dose in real-time and by remote control with radiochromic films. This method based on optoelectronic instrumentation, makes radiochromic film dosimetry an ideal technique for radiation hardness quality assurance tests.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125914060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328696
J. Armani, Alejandro Ureña-Acuña, Philippe Dollfus, M. Slimani
A Radiation hardened temperature controller intended to regenerate CMOS circuits has been designed using commercial off-the-shelf components. Tested with 60Co gamma rays, it has shown a radiation hardness greater than 65 kGy. The hardening methodology used to design the temperature controller is validated through these results.
{"title":"THERMIC: a Hardened Temperature Controller for Regenerating CMOS Circuits Exposed to Ionizing Radiation","authors":"J. Armani, Alejandro Ureña-Acuña, Philippe Dollfus, M. Slimani","doi":"10.1109/RADECS45761.2018.9328696","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328696","url":null,"abstract":"A Radiation hardened temperature controller intended to regenerate CMOS circuits has been designed using commercial off-the-shelf components. Tested with 60Co gamma rays, it has shown a radiation hardness greater than 65 kGy. The hardening methodology used to design the temperature controller is validated through these results.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126342097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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