Pub Date : 2018-09-01DOI: 10.1109/radecs45761.2018.9328699
S. Habinc
{"title":"The General Chairman's Address","authors":"S. Habinc","doi":"10.1109/radecs45761.2018.9328699","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328699","url":null,"abstract":"","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115334634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328672
A. Hudson, A. Scofield, W. Lotshaw, S. Hubbard, M. Slocum, B. Liang, M. Debnath, B. Juang, D. Huffaker
As part of a study on radiation effects in optoelectronic materials, we exposed a series of AIGaAs/GaAs double heterostructures grown by molecular beam epitaxy and metalorganic chemical vapor deposition to electron and proton radiation. The active regions of the test articles were either p-, n-, or unintentionally doped. Steady state and time resolved photoluminescence spectroscopy were used to characterize radiation induced changes to the band structure and carrier dynamics. The effects of electron radiation on low temperature photoluminescence spectra and room temperature carrier dynamics varied with dopant type and density. Steady-state photoluminescence reveals distinct proton exposure effects for p-type materials grown by molecular beam epitaxy compared to n-type structures. Both the steady state and time resolved results suggest that n-type materials are more radiation hard to the effects of 1 MeV electrons than p-type materials.
{"title":"Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures","authors":"A. Hudson, A. Scofield, W. Lotshaw, S. Hubbard, M. Slocum, B. Liang, M. Debnath, B. Juang, D. Huffaker","doi":"10.1109/RADECS45761.2018.9328672","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328672","url":null,"abstract":"As part of a study on radiation effects in optoelectronic materials, we exposed a series of AIGaAs/GaAs double heterostructures grown by molecular beam epitaxy and metalorganic chemical vapor deposition to electron and proton radiation. The active regions of the test articles were either p-, n-, or unintentionally doped. Steady state and time resolved photoluminescence spectroscopy were used to characterize radiation induced changes to the band structure and carrier dynamics. The effects of electron radiation on low temperature photoluminescence spectra and room temperature carrier dynamics varied with dopant type and density. Steady-state photoluminescence reveals distinct proton exposure effects for p-type materials grown by molecular beam epitaxy compared to n-type structures. Both the steady state and time resolved results suggest that n-type materials are more radiation hard to the effects of 1 MeV electrons than p-type materials.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128216394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328724
J. Furuta, Kentaro Kojima, Kazutoshi Kobayashi
Cross sections to cause single event upsets by heavy ions are sensitive to dopant concentration in diffusion and the structure of the raised layer especially in FDSOI. Due to the parasitic bipolar effect, radiation-hardened FFs using the stacked structure in FDSOI are not free from soft errors, which is consistent with measurement results by heavy-ion irradiation. Device-simulation results show that the cross section is proportional to the silicon thickness of the raised layer and inversely proportional to the doping concentration in drain.
{"title":"Evaluation of Heavy-Ion-Induced SEU Cross Sections of a 65-nm Thin BOX FD-SOI Flip-Flops Based on Stacked Inverter","authors":"J. Furuta, Kentaro Kojima, Kazutoshi Kobayashi","doi":"10.1109/RADECS45761.2018.9328724","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328724","url":null,"abstract":"Cross sections to cause single event upsets by heavy ions are sensitive to dopant concentration in diffusion and the structure of the raised layer especially in FDSOI. Due to the parasitic bipolar effect, radiation-hardened FFs using the stacked structure in FDSOI are not free from soft errors, which is consistent with measurement results by heavy-ion irradiation. Device-simulation results show that the cross section is proportional to the silicon thickness of the raised layer and inversely proportional to the doping concentration in drain.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129540741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Heavy Ion SEL/SEE Testing of Microsemi Integrated Motor Controller LX7720","authors":"M. Sureau, Russell Stevens, M. Leuenberger, N. Rezzak, Dorian Johnson","doi":"10.1109/RADECS45761.2018.9328681","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328681","url":null,"abstract":"The initial Heavy Ion SEL/SEE testing results of the Microsemi radiation hardened analog mixed-signal motor controller IC, the LX7720, are presented.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128195461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328669
L. Ding, Wei Chen, Tan Wang, Yinhong Luo, Fengqi Zhang, Rongmei Chen, Xiaoyu Pan, Huabo Sun, Lei Chen
Bipolar amplification effects and feedback of well potential modulation on the primary charge collection were modeled and integrated into bias-dependent SEE model with layout information considered. Through monitoring the well potential evolution with time, establishing the relationship between bipolar amplification current and well potential other than using the parameter current gain, and establishing the relationship between collection current and well potential, phenomena including the pulse quenching in inverter chain, the pulse width increase with reduced well contact area, the upset vulnerability evolution with various well contact areas, etc, can be simulated and evaluated.
{"title":"Circuit-level Prediction of Charge Sharing Transients and Upsets for Various Well Contacts","authors":"L. Ding, Wei Chen, Tan Wang, Yinhong Luo, Fengqi Zhang, Rongmei Chen, Xiaoyu Pan, Huabo Sun, Lei Chen","doi":"10.1109/RADECS45761.2018.9328669","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328669","url":null,"abstract":"Bipolar amplification effects and feedback of well potential modulation on the primary charge collection were modeled and integrated into bias-dependent SEE model with layout information considered. Through monitoring the well potential evolution with time, establishing the relationship between bipolar amplification current and well potential other than using the parameter current gain, and establishing the relationship between collection current and well potential, phenomena including the pulse quenching in inverter chain, the pulse width increase with reduced well contact area, the upset vulnerability evolution with various well contact areas, etc, can be simulated and evaluated.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125707764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328660
M. Campajola, F. Di Capua, D. Fiore, C. Nappi, E. Sarnelli, L. Gasparini
We investigated the radiation tolerance of a Single-Photon Avalanche Diode (SPAD) device manufactured using a 150-nm CMOS process. CMOS SPADs have been studied in view of utilization as photo-detectors in future space missions. An irradiation campaign has been carried out on several test chips containing SPAD arrays with different dimensions. Samples have been exposed to different displacement damage dose. The dark count rate (DCR) characterization as a function of the delivered proton fluence has showed a significant increase in mean DCR, providing the limits of operability of such devices in a space environment. Annealing and cooling have been investigated as possible damage mitigation approaches.
{"title":"Long-Term Degradation Study of CMOS SPADs in Space Radiation Environment","authors":"M. Campajola, F. Di Capua, D. Fiore, C. Nappi, E. Sarnelli, L. Gasparini","doi":"10.1109/RADECS45761.2018.9328660","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328660","url":null,"abstract":"We investigated the radiation tolerance of a Single-Photon Avalanche Diode (SPAD) device manufactured using a 150-nm CMOS process. CMOS SPADs have been studied in view of utilization as photo-detectors in future space missions. An irradiation campaign has been carried out on several test chips containing SPAD arrays with different dimensions. Samples have been exposed to different displacement damage dose. The dark count rate (DCR) characterization as a function of the delivered proton fluence has showed a significant increase in mean DCR, providing the limits of operability of such devices in a space environment. Annealing and cooling have been investigated as possible damage mitigation approaches.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125801777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/radecs45761.2018.9328728
{"title":"The RADECS 2018 Awards","authors":"","doi":"10.1109/radecs45761.2018.9328728","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328728","url":null,"abstract":"","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115859912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328654
P. Zimin, E. Mrozovskaya, V. Anashin, P. Chubunov, O. V. Meschurov, R. G. Useinov, V. M. Uzhegov, A. G. Baz, G. Zebrev
It was shown that enhanced charge trapping takes place in thick gate dielectrics of p-MOS and MNOS dosimeters at low dose rates (ELDRS). The results are shown to be consistent with the previously proposed model.
{"title":"ELDRS in p-MOS and p-MNOS Based RAD-FETs with Thick Gate Insulators: Experiment and Simulation","authors":"P. Zimin, E. Mrozovskaya, V. Anashin, P. Chubunov, O. V. Meschurov, R. G. Useinov, V. M. Uzhegov, A. G. Baz, G. Zebrev","doi":"10.1109/RADECS45761.2018.9328654","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328654","url":null,"abstract":"It was shown that enhanced charge trapping takes place in thick gate dielectrics of p-MOS and MNOS dosimeters at low dose rates (ELDRS). The results are shown to be consistent with the previously proposed model.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114592359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328710
P. Casolaro, G. Breglio, S. Buontempo, L. Campajola, M. Consales, A. Cusano, A. Cutolo, F. Di Capua, F. Fienga, P. Vaiano
Radiochromic film dosimetry is a technique particularly suitable for dose measurements of radiation hardness assurance tests. The main characteristics of radiochromic films are the precise, accurate and permanent dose values, ease of handling and data analysis, high spatial resolution and wide range of dose. However, measurements of the trend of the dose in time with radiochromic films are very difficult by means of commercial read-out tools. In this work we propose a new method, for which a National Patent was filed, for the determination of the dose in real-time and by remote control with radiochromic films. This method based on optoelectronic instrumentation, makes radiochromic film dosimetry an ideal technique for radiation hardness quality assurance tests.
{"title":"An innovative dosimetry method for accurate and real time dose assessment for Radiation Hardness Assurance tests","authors":"P. Casolaro, G. Breglio, S. Buontempo, L. Campajola, M. Consales, A. Cusano, A. Cutolo, F. Di Capua, F. Fienga, P. Vaiano","doi":"10.1109/RADECS45761.2018.9328710","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328710","url":null,"abstract":"Radiochromic film dosimetry is a technique particularly suitable for dose measurements of radiation hardness assurance tests. The main characteristics of radiochromic films are the precise, accurate and permanent dose values, ease of handling and data analysis, high spatial resolution and wide range of dose. However, measurements of the trend of the dose in time with radiochromic films are very difficult by means of commercial read-out tools. In this work we propose a new method, for which a National Patent was filed, for the determination of the dose in real-time and by remote control with radiochromic films. This method based on optoelectronic instrumentation, makes radiochromic film dosimetry an ideal technique for radiation hardness quality assurance tests.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125914060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328696
J. Armani, Alejandro Ureña-Acuña, Philippe Dollfus, M. Slimani
A Radiation hardened temperature controller intended to regenerate CMOS circuits has been designed using commercial off-the-shelf components. Tested with 60Co gamma rays, it has shown a radiation hardness greater than 65 kGy. The hardening methodology used to design the temperature controller is validated through these results.
{"title":"THERMIC: a Hardened Temperature Controller for Regenerating CMOS Circuits Exposed to Ionizing Radiation","authors":"J. Armani, Alejandro Ureña-Acuña, Philippe Dollfus, M. Slimani","doi":"10.1109/RADECS45761.2018.9328696","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328696","url":null,"abstract":"A Radiation hardened temperature controller intended to regenerate CMOS circuits has been designed using commercial off-the-shelf components. Tested with 60Co gamma rays, it has shown a radiation hardness greater than 65 kGy. The hardening methodology used to design the temperature controller is validated through these results.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126342097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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