Pub Date : 2018-09-01DOI: 10.1109/radecs45761.2018.9328719
{"title":"Tables of RADECS 2018 papers","authors":"","doi":"10.1109/radecs45761.2018.9328719","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328719","url":null,"abstract":"","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127382108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328683
Á. B. de Oliveira, F. Benevenuti, L. A. C. Benites, G. Rodrigues, F. Kastensmidt, N. Added, V. Aguiar, N. Medina, M. Silveira, Cédric Debarge
This work investigates the influence of using the built-in configuration memory scrubber and triple modular hardware redundancy in the cross section of a radiation-hardened SRAM-based FPGA from NanoXplore. Different designs versions are investigated under heavy ions for the occurrence of transient errors, failures, and timeouts. The calculated dynamic cross-sections are in agreement with the expected order of magnitude of radiation hardened SRAM-based FPGAs. Results show that the most reliable configuration is using DSPs for the operational logic and applying full design redundancy combined with scrubbing.
{"title":"Analyzing the Influence of using Reconfiguration Memory Scrubber and Hardware Redundancy in a Radiation Hardened FPGA under Heavy Ions","authors":"Á. B. de Oliveira, F. Benevenuti, L. A. C. Benites, G. Rodrigues, F. Kastensmidt, N. Added, V. Aguiar, N. Medina, M. Silveira, Cédric Debarge","doi":"10.1109/RADECS45761.2018.9328683","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328683","url":null,"abstract":"This work investigates the influence of using the built-in configuration memory scrubber and triple modular hardware redundancy in the cross section of a radiation-hardened SRAM-based FPGA from NanoXplore. Different designs versions are investigated under heavy ions for the occurrence of transient errors, failures, and timeouts. The calculated dynamic cross-sections are in agreement with the expected order of magnitude of radiation hardened SRAM-based FPGAs. Results show that the most reliable configuration is using DSPs for the operational logic and applying full design redundancy combined with scrubbing.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125330878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328715
F. Irom, G. Allen, L. Edmonds, B. Rax
This paper reports proton damage in the Micropac 66183–300 optocoupler and investigates the radiation degradation of the optocoupler current transfer ratio (CTR) and transistor gain, HFE. We present statistical analysis using a one-sided tolerance method on the optocoupler CTR data.
{"title":"Proton Damage in Micropac 66183-300 Optocoupler","authors":"F. Irom, G. Allen, L. Edmonds, B. Rax","doi":"10.1109/RADECS45761.2018.9328715","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328715","url":null,"abstract":"This paper reports proton damage in the Micropac 66183–300 optocoupler and investigates the radiation degradation of the optocoupler current transfer ratio (CTR) and transistor gain, HFE. We present statistical analysis using a one-sided tolerance method on the optocoupler CTR data.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121917093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328731
L. Obermueller, C. Cazzaniga, S. Kulmiya, C. Frost
A fast neutron monitor based on Single Event Upsets in SRAM devices has been designed and tested for use on atmospheric neutron beamlines. Boards with a total memory capacity of up to 16 Mbit are irradiated, and the total number of bit-flips in the memory caused by fast neutron radiation effects is directly proportional to the neutron beam fluence. This system provides a count rate of 0.242 cps/Mbit. A scan of the beam was possible using this monitor, demonstrating that the beam profile is square and uniform.
{"title":"A Fast Neutron Monitor Based on Single Event Effects in SRAMs Using Commercial off-the-Shelf Components","authors":"L. Obermueller, C. Cazzaniga, S. Kulmiya, C. Frost","doi":"10.1109/RADECS45761.2018.9328731","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328731","url":null,"abstract":"A fast neutron monitor based on Single Event Upsets in SRAM devices has been designed and tested for use on atmospheric neutron beamlines. Boards with a total memory capacity of up to 16 Mbit are irradiated, and the total number of bit-flips in the memory caused by fast neutron radiation effects is directly proportional to the neutron beam fluence. This system provides a count rate of 0.242 cps/Mbit. A scan of the beam was possible using this monitor, demonstrating that the beam profile is square and uniform.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126567980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328689
V. Bezhenova, A. Michalowska-Forsyth, W. Pflanzl
MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID <25 krad, on the example of a test-chip fabricated in a commercial 180 nm CMOS technology.
{"title":"Low TID Effects on MOS Transistors","authors":"V. Bezhenova, A. Michalowska-Forsyth, W. Pflanzl","doi":"10.1109/RADECS45761.2018.9328689","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328689","url":null,"abstract":"MOS transistors are susceptible to total ionizing dose (TID) effects. Although TID effects have been studied for the past decades, most of the studies focus on doses far beyond 100 krad. In various applications, TID is between 1 and 100 krad. In this study we discuss TID effects on DC and noise performance of NMOS and PMOS transistors with thick gate oxide at TID <25 krad, on the example of a test-chip fabricated in a commercial 180 nm CMOS technology.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117286267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/radecs45761.2018.9328671
{"title":"The RADECS 2018 Technical Program Committee","authors":"","doi":"10.1109/radecs45761.2018.9328671","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328671","url":null,"abstract":"","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129365320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328703
B. Fox, K. Simmons-Potter
Fibers doped with Yb3+ serve as optical amplification elements in many high-power amplification systems, and there is an interest in significantly extending the capabilities of rare-earth doped fiber amplifiers to space-based systems. We investigate the effects of gamma-radiation-induced photodarkening on the performance of such fibers, both for passive as well as active configurations. With an emphasis on low total ionizing doses, passive irradiations were found to show increased absorption across the visible and IR spectrum. Furthermore, continuous-pumping of an Yb3+ -doped fiber amplifier in a gamma radiation environment was found to exhibit significantly greater degradation than a similar intermittently-pumped irradiated amplifier for low total ionizing doses of under 10 krad(Si) [100 Gy(Si)]. We discuss the implications of the data which provide insight into energy-transfer mechanisms in the fibers and the relationship of gamma-radiation-induced photodarkening and pump-radiation-induced photodarkening associated with the observed fiber degradation.
{"title":"Effect of Ionizing Radiation on Optical Transmission of Actively Pumped Yb- Doped Fiber Amplifiers","authors":"B. Fox, K. Simmons-Potter","doi":"10.1109/RADECS45761.2018.9328703","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328703","url":null,"abstract":"Fibers doped with Yb3+ serve as optical amplification elements in many high-power amplification systems, and there is an interest in significantly extending the capabilities of rare-earth doped fiber amplifiers to space-based systems. We investigate the effects of gamma-radiation-induced photodarkening on the performance of such fibers, both for passive as well as active configurations. With an emphasis on low total ionizing doses, passive irradiations were found to show increased absorption across the visible and IR spectrum. Furthermore, continuous-pumping of an Yb3+ -doped fiber amplifier in a gamma radiation environment was found to exhibit significantly greater degradation than a similar intermittently-pumped irradiated amplifier for low total ionizing doses of under 10 krad(Si) [100 Gy(Si)]. We discuss the implications of the data which provide insight into energy-transfer mechanisms in the fibers and the relationship of gamma-radiation-induced photodarkening and pump-radiation-induced photodarkening associated with the observed fiber degradation.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127840232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/radecs45761.2018.9328659
Yu-Mi Kim, S. Yun, Seung-Hyun Lee, H. Kwon, Kyeryung Kim, Yong-sub Cho
Korea Multi-purpose Accelerator Complex (KOMAC) has been operating 20 MeV and 100 MeV proton beam lines to provide proton beams for various applications since 2013. A new beam line with low flux proton has been constructed for simulation of the space radiation-like environment in 2016 and commissioning has been completed in 2017. In this work, we introduced the new proton beam line and reported the results of preliminary proton beam characterization test. As the results, we concluded the new beam line can provide as low as flux of 105 #/cm2/pulse, good uniformity within ± 10% and large beam area with wide range of proton energies.
{"title":"Investigation of Low Flux Proton Beam at KOMAC for Space Applications","authors":"Yu-Mi Kim, S. Yun, Seung-Hyun Lee, H. Kwon, Kyeryung Kim, Yong-sub Cho","doi":"10.1109/radecs45761.2018.9328659","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328659","url":null,"abstract":"Korea Multi-purpose Accelerator Complex (KOMAC) has been operating 20 MeV and 100 MeV proton beam lines to provide proton beams for various applications since 2013. A new beam line with low flux proton has been constructed for simulation of the space radiation-like environment in 2016 and commissioning has been completed in 2017. In this work, we introduced the new proton beam line and reported the results of preliminary proton beam characterization test. As the results, we concluded the new beam line can provide as low as flux of 105 #/cm2/pulse, good uniformity within ± 10% and large beam area with wide range of proton energies.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131090420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328657
R. Germanicus, B. Crețu, A. Touboul, C. Grygiel, F. Bezerra, G. Rolland, F. Lallemand, C. Bunel, P. Descamps
In this study, we demonstrate the capability to detect microscopic stable displacement nature created by proton irradiations with a method based on the discrimination of the three major low frequency noise sources generally observed in semiconductor devices. Low frequency noise measurements are carried out in silicon in-situ phosphorus doped polycrystalline silicon serpentine resistance used as test vehicle. We observe that for the pristine sample, the voltage noise power density can be explained only considering 1/f and thermal noise contribution on the total noise, while for irradiated sample generation recombination noise prevails. Preliminary results on low frequency noise spectroscopy, used as a diagnostic tool in order to identify stable traps created by protons irradiations are presented.
{"title":"Identification of stable irradiation-induced-defects using low frequency noise spectroscopy","authors":"R. Germanicus, B. Crețu, A. Touboul, C. Grygiel, F. Bezerra, G. Rolland, F. Lallemand, C. Bunel, P. Descamps","doi":"10.1109/RADECS45761.2018.9328657","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328657","url":null,"abstract":"In this study, we demonstrate the capability to detect microscopic stable displacement nature created by proton irradiations with a method based on the discrimination of the three major low frequency noise sources generally observed in semiconductor devices. Low frequency noise measurements are carried out in silicon in-situ phosphorus doped polycrystalline silicon serpentine resistance used as test vehicle. We observe that for the pristine sample, the voltage noise power density can be explained only considering 1/f and thermal noise contribution on the total noise, while for irradiated sample generation recombination noise prevails. Preliminary results on low frequency noise spectroscopy, used as a diagnostic tool in order to identify stable traps created by protons irradiations are presented.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122418350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328685
C. Fuchs, N. Murillo, A. Plaat, E. V. D. Kouwe, D. Harsono, T. Stefanov
We present an on-board computer architecture designed for small satellites (< 50kg), which exploits software-fault-tolerance to achieve strong fault coverage with commodity hardware. Micro- and nanosatellites have become popular platforms for a variety of commercial and scientific applications, but today are considered suitable mainly for short and low-priority space missions due to their low reliability. In part, this can be attributed to their reliance upon cheap, low-feature size, COTS components originally designed for embedded and mobile-market applications, for which traditional hardware-voting concepts are ineffective. Software-fault-tolerance has been shown to be effective for such systems, but have largely been ignored by the space industry due to low maturity, as most have only been researched in theory. In practice, designers of payload instruments and miniaturized satellites are usually forced to sacrifice reliability in favor of delivering the level of performance necessary for cutting-edge science and innovative commercial applications. Thus, we developed a set of software measures facilitating fault tolerance based upon thread-level coarse-grain lockstep, which we validated through fault-injection. To offer strong long-term fault coverage, our architecture is implemented as tiled MPSoC on an FPGA, utilizing partial reconfiguration, as well as mixed criticality. This architecture can satisfy the high performance requirements of current and future scientific and commercial space missions at very low cost, while offering the strong fault-coverage guarantees necessary for platform control even for missions with a long duration. This architecture was developed for a 4-year ESA project. Together with two industrial partners, we are developing a prototype to then undergo radiation testing.
{"title":"Fault-Tolerant Nanosatellite Computing on a Budget","authors":"C. Fuchs, N. Murillo, A. Plaat, E. V. D. Kouwe, D. Harsono, T. Stefanov","doi":"10.1109/RADECS45761.2018.9328685","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328685","url":null,"abstract":"We present an on-board computer architecture designed for small satellites (< 50kg), which exploits software-fault-tolerance to achieve strong fault coverage with commodity hardware. Micro- and nanosatellites have become popular platforms for a variety of commercial and scientific applications, but today are considered suitable mainly for short and low-priority space missions due to their low reliability. In part, this can be attributed to their reliance upon cheap, low-feature size, COTS components originally designed for embedded and mobile-market applications, for which traditional hardware-voting concepts are ineffective. Software-fault-tolerance has been shown to be effective for such systems, but have largely been ignored by the space industry due to low maturity, as most have only been researched in theory. In practice, designers of payload instruments and miniaturized satellites are usually forced to sacrifice reliability in favor of delivering the level of performance necessary for cutting-edge science and innovative commercial applications. Thus, we developed a set of software measures facilitating fault tolerance based upon thread-level coarse-grain lockstep, which we validated through fault-injection. To offer strong long-term fault coverage, our architecture is implemented as tiled MPSoC on an FPGA, utilizing partial reconfiguration, as well as mixed criticality. This architecture can satisfy the high performance requirements of current and future scientific and commercial space missions at very low cost, while offering the strong fault-coverage guarantees necessary for platform control even for missions with a long duration. This architecture was developed for a 4-year ESA project. Together with two industrial partners, we are developing a prototype to then undergo radiation testing.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126137566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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