Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328706
J. Guillermin, B. Vandevelde, N. Chatry, F. Bezerra, D. Dangla, D. Standarovski, R. Ecoffet
Complex events such as High Current Event and Single Event Functional Interrupt were observed on different non-volatile memories in a radiative environment. Indeed, ionizing particles can strongly impact the behavior of the devices. The purpose of this work was to characterize precisely these complex events and to assess their impact on the operability of the devices. The correlation between losses of functionality and over-power consumption was also studied in order to investigate some mitigation techniques for in-flight conditions.
{"title":"High Current Event and Single Event Functional Interrupt in Non-Volatile Memories","authors":"J. Guillermin, B. Vandevelde, N. Chatry, F. Bezerra, D. Dangla, D. Standarovski, R. Ecoffet","doi":"10.1109/RADECS45761.2018.9328706","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328706","url":null,"abstract":"Complex events such as High Current Event and Single Event Functional Interrupt were observed on different non-volatile memories in a radiative environment. Indeed, ionizing particles can strongly impact the behavior of the devices. The purpose of this work was to characterize precisely these complex events and to assess their impact on the operability of the devices. The correlation between losses of functionality and over-power consumption was also studied in order to investigate some mitigation techniques for in-flight conditions.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116999654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328657
R. Germanicus, B. Crețu, A. Touboul, C. Grygiel, F. Bezerra, G. Rolland, F. Lallemand, C. Bunel, P. Descamps
In this study, we demonstrate the capability to detect microscopic stable displacement nature created by proton irradiations with a method based on the discrimination of the three major low frequency noise sources generally observed in semiconductor devices. Low frequency noise measurements are carried out in silicon in-situ phosphorus doped polycrystalline silicon serpentine resistance used as test vehicle. We observe that for the pristine sample, the voltage noise power density can be explained only considering 1/f and thermal noise contribution on the total noise, while for irradiated sample generation recombination noise prevails. Preliminary results on low frequency noise spectroscopy, used as a diagnostic tool in order to identify stable traps created by protons irradiations are presented.
{"title":"Identification of stable irradiation-induced-defects using low frequency noise spectroscopy","authors":"R. Germanicus, B. Crețu, A. Touboul, C. Grygiel, F. Bezerra, G. Rolland, F. Lallemand, C. Bunel, P. Descamps","doi":"10.1109/RADECS45761.2018.9328657","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328657","url":null,"abstract":"In this study, we demonstrate the capability to detect microscopic stable displacement nature created by proton irradiations with a method based on the discrimination of the three major low frequency noise sources generally observed in semiconductor devices. Low frequency noise measurements are carried out in silicon in-situ phosphorus doped polycrystalline silicon serpentine resistance used as test vehicle. We observe that for the pristine sample, the voltage noise power density can be explained only considering 1/f and thermal noise contribution on the total noise, while for irradiated sample generation recombination noise prevails. Preliminary results on low frequency noise spectroscopy, used as a diagnostic tool in order to identify stable traps created by protons irradiations are presented.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122418350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/radecs45761.2018.9328649
L. C. Adams, J. Howard, E. J. Barth, peixiong zhao, R. A. Reed, R. A. Peters, A. Witulski
Machine learning is used to extend performance in robotic systems suffering from TID sensor failure. The method is implemented on a robotic manipulator to demonstrate reconstruction of encoder signals submitted to simulated radiation effects.
{"title":"Machine Learning Techniques for Mitigating Sensor Ionizing Dose Failures in Robotic Systems","authors":"L. C. Adams, J. Howard, E. J. Barth, peixiong zhao, R. A. Reed, R. A. Peters, A. Witulski","doi":"10.1109/radecs45761.2018.9328649","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328649","url":null,"abstract":"Machine learning is used to extend performance in robotic systems suffering from TID sensor failure. The method is implemented on a robotic manipulator to demonstrate reconstruction of encoder signals submitted to simulated radiation effects.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"320 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117066284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328714
A. V. Demidova, M. Koroteev, Dmitry V. Zavorotnov, D. Boychenko
The influence of TID on several types of XSIS and Epson quartz oscillators has been studied. Parameters of quartz resonator don't change much until functionality fails. It's recommended to check the OE or ST signal.
{"title":"Total-Ionizing-Dose induced degradation of several quartz oscillators","authors":"A. V. Demidova, M. Koroteev, Dmitry V. Zavorotnov, D. Boychenko","doi":"10.1109/RADECS45761.2018.9328714","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328714","url":null,"abstract":"The influence of TID on several types of XSIS and Epson quartz oscillators has been studied. Parameters of quartz resonator don't change much until functionality fails. It's recommended to check the OE or ST signal.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131687609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328677
T. Nuns, C. Inguimbert, S. Soonckindt, B. Dryer, T. Buggey, C. Poivey
This paper proposes some new experimental data comparing the damage factor of silicon devices with the NIEL after electron, proton and gamma irradiations. The results show that the measured damage factors fit better with the “effective” NIEL, an alternative model of displacement damage effects, than with the classical one.
{"title":"Experimental Study of the NIEL Scaling for Silicon Devices","authors":"T. Nuns, C. Inguimbert, S. Soonckindt, B. Dryer, T. Buggey, C. Poivey","doi":"10.1109/RADECS45761.2018.9328677","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328677","url":null,"abstract":"This paper proposes some new experimental data comparing the damage factor of silicon devices with the NIEL after electron, proton and gamma irradiations. The results show that the measured damage factors fit better with the “effective” NIEL, an alternative model of displacement damage effects, than with the classical one.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133883169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328685
C. Fuchs, N. Murillo, A. Plaat, E. V. D. Kouwe, D. Harsono, T. Stefanov
We present an on-board computer architecture designed for small satellites (< 50kg), which exploits software-fault-tolerance to achieve strong fault coverage with commodity hardware. Micro- and nanosatellites have become popular platforms for a variety of commercial and scientific applications, but today are considered suitable mainly for short and low-priority space missions due to their low reliability. In part, this can be attributed to their reliance upon cheap, low-feature size, COTS components originally designed for embedded and mobile-market applications, for which traditional hardware-voting concepts are ineffective. Software-fault-tolerance has been shown to be effective for such systems, but have largely been ignored by the space industry due to low maturity, as most have only been researched in theory. In practice, designers of payload instruments and miniaturized satellites are usually forced to sacrifice reliability in favor of delivering the level of performance necessary for cutting-edge science and innovative commercial applications. Thus, we developed a set of software measures facilitating fault tolerance based upon thread-level coarse-grain lockstep, which we validated through fault-injection. To offer strong long-term fault coverage, our architecture is implemented as tiled MPSoC on an FPGA, utilizing partial reconfiguration, as well as mixed criticality. This architecture can satisfy the high performance requirements of current and future scientific and commercial space missions at very low cost, while offering the strong fault-coverage guarantees necessary for platform control even for missions with a long duration. This architecture was developed for a 4-year ESA project. Together with two industrial partners, we are developing a prototype to then undergo radiation testing.
{"title":"Fault-Tolerant Nanosatellite Computing on a Budget","authors":"C. Fuchs, N. Murillo, A. Plaat, E. V. D. Kouwe, D. Harsono, T. Stefanov","doi":"10.1109/RADECS45761.2018.9328685","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328685","url":null,"abstract":"We present an on-board computer architecture designed for small satellites (< 50kg), which exploits software-fault-tolerance to achieve strong fault coverage with commodity hardware. Micro- and nanosatellites have become popular platforms for a variety of commercial and scientific applications, but today are considered suitable mainly for short and low-priority space missions due to their low reliability. In part, this can be attributed to their reliance upon cheap, low-feature size, COTS components originally designed for embedded and mobile-market applications, for which traditional hardware-voting concepts are ineffective. Software-fault-tolerance has been shown to be effective for such systems, but have largely been ignored by the space industry due to low maturity, as most have only been researched in theory. In practice, designers of payload instruments and miniaturized satellites are usually forced to sacrifice reliability in favor of delivering the level of performance necessary for cutting-edge science and innovative commercial applications. Thus, we developed a set of software measures facilitating fault tolerance based upon thread-level coarse-grain lockstep, which we validated through fault-injection. To offer strong long-term fault coverage, our architecture is implemented as tiled MPSoC on an FPGA, utilizing partial reconfiguration, as well as mixed criticality. This architecture can satisfy the high performance requirements of current and future scientific and commercial space missions at very low cost, while offering the strong fault-coverage guarantees necessary for platform control even for missions with a long duration. This architecture was developed for a 4-year ESA project. Together with two industrial partners, we are developing a prototype to then undergo radiation testing.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126137566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328653
O. Dvornikov, V. Dziatlau, N. Prokopenko, V. Tchekhovski, A. Bugakova
Theeffect of 6 MeV fast electrons and ${}^{60}{mathbf{Co}}$ gamma radiation on the parameters of analog components of the structured array (SA) MH2XA010 - the reference voltage source (RVS) and the charge-sensitive amplifier (CSA) is compared. It is shown that at the absorbed dose of gamma radiation $mathbf{D}_{mathbf{G}}$ = 2.04 Mrad and the electron fluence 3.0×1014 el/cm2 the change in the RVS and CSA parameters doesn't exceed the norms established for the operating temperature range. SA MH2XA010 is recommended for the fabrication of analog sensor interfaces operating under hard operation conditions.
{"title":"The Radiation Effect on the Parameters of Reference Voltage Sources and Charge-Sensitive Amplifiers of the Structured Array MH2XA010","authors":"O. Dvornikov, V. Dziatlau, N. Prokopenko, V. Tchekhovski, A. Bugakova","doi":"10.1109/RADECS45761.2018.9328653","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328653","url":null,"abstract":"Theeffect of 6 MeV fast electrons and ${}^{60}{mathbf{Co}}$ gamma radiation on the parameters of analog components of the structured array (SA) MH2XA010 - the reference voltage source (RVS) and the charge-sensitive amplifier (CSA) is compared. It is shown that at the absorbed dose of gamma radiation $mathbf{D}_{mathbf{G}}$ = 2.04 Mrad and the electron fluence 3.0×1014 el/cm2 the change in the RVS and CSA parameters doesn't exceed the norms established for the operating temperature range. SA MH2XA010 is recommended for the fabrication of analog sensor interfaces operating under hard operation conditions.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121375767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/radecs45761.2018.9328662
{"title":"The RADECS2018 Awards Committee","authors":"","doi":"10.1109/radecs45761.2018.9328662","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328662","url":null,"abstract":"","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124244879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328688
A. Denker, J. Röhrich
The HZB offers the possibility of γ- and proton irradiation under ambient atmosphere. Previous experiments include tests of dosimeters, radiation hardness tests of electronic components as well as TID tests.
{"title":"Irradiation Facilities at the Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)","authors":"A. Denker, J. Röhrich","doi":"10.1109/RADECS45761.2018.9328688","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328688","url":null,"abstract":"The HZB offers the possibility of γ- and proton irradiation under ambient atmosphere. Previous experiments include tests of dosimeters, radiation hardness tests of electronic components as well as TID tests.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125426783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The ELDRS of PNP transistors were investigated at dose rates of 10, 5, 1, and 0.1mrad(Si)/s and dose rate 100rad(Si)/s, while the evaluation of the ELDRS under the high and dose rate are performed with the Temperature-Switching-Approach Irradiation. The estimated results using Temperature-Switching-Approach were in good agreement with the experimental data.
{"title":"Enhanced Low Dose Rate Sensitivity of PNP Transistor at Extreme-Low Dose Rates","authors":"Mohan Liu, Wu Lu, Xin Wang, Xing Yu, Jing Sun, Xiaolong Li, Xinyu Wei, S. Yao, Weilei Shi, Cheng-fa He, Q. Guo","doi":"10.1109/RADECS45761.2018.9328712","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328712","url":null,"abstract":"The ELDRS of PNP transistors were investigated at dose rates of 10, 5, 1, and 0.1mrad(Si)/s and dose rate 100rad(Si)/s, while the evaluation of the ELDRS under the high and dose rate are performed with the Temperature-Switching-Approach Irradiation. The estimated results using Temperature-Switching-Approach were in good agreement with the experimental data.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122479575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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