Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328726
J. Moreno, E. Cordero, D. López, S. Massetti, M. Cabello, V. Soler, P. Godignon, E. Maset
It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.
{"title":"Assessing Radiation Hardness of SIC MOS Structures","authors":"J. Moreno, E. Cordero, D. López, S. Massetti, M. Cabello, V. Soler, P. Godignon, E. Maset","doi":"10.1109/RADECS45761.2018.9328726","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328726","url":null,"abstract":"It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134553843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328674
M. Mauguet, L. Azema, E. L. Goulven, A. Varotsou, X. Marie, D. Lagarde, C. Boatella-Polo
A selection of power diodes with a large range of electrical and structural characteristics was irradiated with heavy ions. The data are analyzed based on 4 main behaviors of the leakage current recorded during irradiation. The types and occurrences of failures are studied considering the material (silicon, silicon carbide) and the structure (Schottky or PN junction) of the diode. The derating schemes for Si, SiC Schottky diode and ultrafast rectifiers are also discussed.
{"title":"Analysis of Heavy Ion Irradiation Test Results on Power Diodes","authors":"M. Mauguet, L. Azema, E. L. Goulven, A. Varotsou, X. Marie, D. Lagarde, C. Boatella-Polo","doi":"10.1109/RADECS45761.2018.9328674","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328674","url":null,"abstract":"A selection of power diodes with a large range of electrical and structural characteristics was irradiated with heavy ions. The data are analyzed based on 4 main behaviors of the leakage current recorded during irradiation. The types and occurrences of failures are studied considering the material (silicon, silicon carbide) and the structure (Schottky or PN junction) of the diode. The derating schemes for Si, SiC Schottky diode and ultrafast rectifiers are also discussed.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131341620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/radecs45761.2018.9328722
{"title":"The RADECS 2018 Topical Day (Short Courses)","authors":"","doi":"10.1109/radecs45761.2018.9328722","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328722","url":null,"abstract":"","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"46 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113965630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328692
A. Tsirkov, D. Bobrovsky, A. Pechenkin, A. Chumakov, G. Sorokoumov
Experimental results are presented for different CMOS ICs, evidencing latent damage induced by single event latch-up. Additive and non-additive destructive effects are analyzed.
实验结果表明，单事件锁存会引起潜在的损伤。分析了加性和非加性破坏效应。
{"title":"Latent Single-Event Latchup-induced damage in Complementary Metal-Oxide- Semiconductor","authors":"A. Tsirkov, D. Bobrovsky, A. Pechenkin, A. Chumakov, G. Sorokoumov","doi":"10.1109/RADECS45761.2018.9328692","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328692","url":null,"abstract":"Experimental results are presented for different CMOS ICs, evidencing latent damage induced by single event latch-up. Additive and non-additive destructive effects are analyzed.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133913326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328730
A. M. Galimov, G. Protopopov, I. A. Lyakhov, V. Anashin, O. S. Pivko, A. V. Alexandrov, G. Zebrev
A procedure for proton-induced upset cross section simulation based on the limited heavy ion experimental data is proposed. Validation and comparison to the existing techniques are provided as well.
提出了一种基于有限重离子实验数据的质子诱导扰动截面模拟方法。并对现有技术进行了验证和比较。
{"title":"Phenomenological Approach to Simulation of Proton Indirect-Ionization Induced Upset Cross Sections in Commercial Memory Circuits","authors":"A. M. Galimov, G. Protopopov, I. A. Lyakhov, V. Anashin, O. S. Pivko, A. V. Alexandrov, G. Zebrev","doi":"10.1109/RADECS45761.2018.9328730","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328730","url":null,"abstract":"A procedure for proton-induced upset cross section simulation based on the limited heavy ion experimental data is proposed. Validation and comparison to the existing techniques are provided as well.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133360922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328658
M. Gorbunov, A. A. Antonov, P. A. Monakhov, V. Anashin, Andrey A. Klyayn, A. Koziukov, E. Imametdinov, Elena V. Marina
We present the direct experimental vulnerability comparison of two microprocessor designs with different Single Event Effects (SEE) mitigation techniques at different heavy ion fluxes. The trade-off between the performance, fault-tolerance and power consumption is considered. We introduce the Mean Fluence Between Failures (MFBF) metric for the vulnerability comparison.
{"title":"Direct Experimental Performance Comparison of Two Microprocessors for the Efficiency Evaluation of Single Event Effects Mitigation Techniques","authors":"M. Gorbunov, A. A. Antonov, P. A. Monakhov, V. Anashin, Andrey A. Klyayn, A. Koziukov, E. Imametdinov, Elena V. Marina","doi":"10.1109/RADECS45761.2018.9328658","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328658","url":null,"abstract":"We present the direct experimental vulnerability comparison of two microprocessor designs with different Single Event Effects (SEE) mitigation techniques at different heavy ion fluxes. The trade-off between the performance, fault-tolerance and power consumption is considered. We introduce the Mean Fluence Between Failures (MFBF) metric for the vulnerability comparison.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125001604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328675
E. Mizuta, Y. Nakada, S. Kuboyama, M. Inoue, Y. Kumagai, S. Tatemichi, T. Shiigi, T. Watashima, H. Shindou
We report the results of single-event effects test using heavy ions and total ionizing dose test using γ-ray in JAXA qualified super-junction power MOSFETs manufactured by Fuji electric company and COTS super- junction power MOSFETs.
{"title":"Radiation Test Results in Newly Developed Super-Junction Power MOSFETs","authors":"E. Mizuta, Y. Nakada, S. Kuboyama, M. Inoue, Y. Kumagai, S. Tatemichi, T. Shiigi, T. Watashima, H. Shindou","doi":"10.1109/RADECS45761.2018.9328675","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328675","url":null,"abstract":"We report the results of single-event effects test using heavy ions and total ionizing dose test using γ-ray in JAXA qualified super-junction power MOSFETs manufactured by Fuji electric company and COTS super- junction power MOSFETs.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129424689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328670
K. Niederkleine, Theodor Hillebrand, S. Paul
Semiconductor design for radiation environments usualy applies worst-case estimations to calculate the needs for reliable operation. The ability to simulate components for any mission is an advantage in this process and helps to save costs.
{"title":"Realistic Radiation and PVTA fault simulation for OFDM synchronization","authors":"K. Niederkleine, Theodor Hillebrand, S. Paul","doi":"10.1109/RADECS45761.2018.9328670","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328670","url":null,"abstract":"Semiconductor design for radiation environments usualy applies worst-case estimations to calculate the needs for reliable operation. The ability to simulate components for any mission is an advantage in this process and helps to save costs.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124550123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/radecs45761.2018.9328723
{"title":"The 2018 RADECS Association - Yuri Gagarin Award","authors":"","doi":"10.1109/radecs45761.2018.9328723","DOIUrl":"https://doi.org/10.1109/radecs45761.2018.9328723","url":null,"abstract":"","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124138640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328718
H. Torres, J. Cruz-Colon, V. Narayanan, J. Valle, R. Baumann
Single Events Effect (SEE) and Total Ionizing Dose (TID) characterization results for the new TPS50601A-SP, 6 A, DC-DC converter from Texas Instruments are presented. The TPS50601A-SP is Radiation Hardness Assured (RHA) up to a TID=100 krad (Si) for HDR and LDR and SEL-SEB-SEGR free up to LETEFF=75 MeV-cm2/mg. SET's were characterized up to LETEFF=65 MeV-cm2/mg.
介绍了德州仪器公司新型TPS50601A-SP, 6 A DC-DC变换器的单事件效应(SEE)和总电离剂量(TID)表征结果。TPS50601A-SP是辐射硬度保证(RHA)高达TID=100克拉(Si)的HDR和LDR和SEL-SEB-SEGR自由高达LETEFF=75 MeV-cm2/mg。SET的特征值高达LETEFF=65 MeV-cm2/mg。
{"title":"Radiation Testing and Characterization of the TPS50601A-SP Radiation Hardened Buck Converter","authors":"H. Torres, J. Cruz-Colon, V. Narayanan, J. Valle, R. Baumann","doi":"10.1109/RADECS45761.2018.9328718","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328718","url":null,"abstract":"Single Events Effect (SEE) and Total Ionizing Dose (TID) characterization results for the new TPS50601A-SP, 6 A, DC-DC converter from Texas Instruments are presented. The TPS50601A-SP is Radiation Hardness Assured (RHA) up to a TID=100 krad (Si) for HDR and LDR and SEL-SEB-SEGR free up to LET<inf>EFF</inf>=75 MeV-cm<sup>2</sup>/mg. SET's were characterized up to LET<inf>EFF</inf>=65 MeV-cm<sup>2</sup>/mg.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125258826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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