Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553130
Z.B. Zhang, S.C. Song, K. Choi, J. H. Sim, P. Majhi, B. Lee
This paper describes a simple process that can tune the work function of ALD TaCN on HfO2 from 4.47eV to 4.77eV by adding a MOCVD TiN overlayer. It also discusses the device characteristics of TaCN and TiN/TaCN (TaCN with a TiN overlayer) metal gate/high-k MOSFETs and presents a manufacturable process for integrating the dual metal gate/high-k CMOS in FD-FET technology
{"title":"Effects of TiN overlay on ALD TaCN metal gate/high-k MOSFET characteristics","authors":"Z.B. Zhang, S.C. Song, K. Choi, J. H. Sim, P. Majhi, B. Lee","doi":"10.1109/DRC.2005.1553130","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553130","url":null,"abstract":"This paper describes a simple process that can tune the work function of ALD TaCN on HfO2 from 4.47eV to 4.77eV by adding a MOCVD TiN overlayer. It also discusses the device characteristics of TaCN and TiN/TaCN (TaCN with a TiN overlayer) metal gate/high-k MOSFETs and presents a manufacturable process for integrating the dual metal gate/high-k CMOS in FD-FET technology","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123846744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553063
S. Rai, S. S. Islam
This paper reports a model to calculate low frequency noise in single- and double-gate MOSFETs using a quantum mechanical approach. The cross-sections of the single- and double-gate FETs are shown in the paper
{"title":"Modeling of low-frequency noise in single- and double-gate MOSFETs using quantum mechanical approach","authors":"S. Rai, S. S. Islam","doi":"10.1109/DRC.2005.1553063","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553063","url":null,"abstract":"This paper reports a model to calculate low frequency noise in single- and double-gate MOSFETs using a quantum mechanical approach. The cross-sections of the single- and double-gate FETs are shown in the paper","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125865090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553048
Dongsoo Lee, Dooho Choi, Hyejung Choi, H. Sim, H. Hwang
The authors have investigated the resistance switching characteristics of non-stoichiometric ZrOx and STOx thin films for nonvolatile memory application. The non-stoichiometric ZrOx films were grown in a reactive sputtering method using Zr target and SrTiOx (STOx) films were deposited by pulsed laser deposition (PLD) method using a pure SrTiO3 target
{"title":"Reversible resistance switching of the non-stoichiometric ZrO/sub x/ and SrTiO/sub x/ for non-volatile memory applications","authors":"Dongsoo Lee, Dooho Choi, Hyejung Choi, H. Sim, H. Hwang","doi":"10.1109/DRC.2005.1553048","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553048","url":null,"abstract":"The authors have investigated the resistance switching characteristics of non-stoichiometric ZrO<sub>x</sub> and STO<sub>x</sub> thin films for nonvolatile memory application. The non-stoichiometric ZrO<sub>x</sub> films were grown in a reactive sputtering method using Zr target and SrTiO<sub>x</sub> (STO<sub>x</sub>) films were deposited by pulsed laser deposition (PLD) method using a pure SrTiO<sub>3</sub> target","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115871459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553125
M. Holub, J. Shin, S. Chakrabarti, P. Bhattacharya
In summary, the authors have demonstrated controlled switching between left- and right- elliptically polarized modes in a VCSEL using a ferromagnetic semiconductor to align hole spins. The experiment proves that the concept of spin injection applies equally well for semiconductor lasers as it does for LEDs. Spin transport occurs across a distance of -0.25 mum for temperatures ranging from 80 to 105 K. Future work will concentrate on increasing IICP by designing spin-VCSELs with In(Ga)As/GaAs quantum dot active regions and incorporating spin-aligner layers that will allow operation at higher temperatures
{"title":"Electrically-injected, spin-polarized, quantum well vertical-cavity surface-emitting lasers","authors":"M. Holub, J. Shin, S. Chakrabarti, P. Bhattacharya","doi":"10.1109/DRC.2005.1553125","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553125","url":null,"abstract":"In summary, the authors have demonstrated controlled switching between left- and right- elliptically polarized modes in a VCSEL using a ferromagnetic semiconductor to align hole spins. The experiment proves that the concept of spin injection applies equally well for semiconductor lasers as it does for LEDs. Spin transport occurs across a distance of -0.25 mum for temperatures ranging from 80 to 105 K. Future work will concentrate on increasing IICP by designing spin-VCSELs with In(Ga)As/GaAs quantum dot active regions and incorporating spin-aligner layers that will allow operation at higher temperatures","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125861728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553105
J. Chen, M. Freitag, J. Tsang, Q. Fu, Jie Liu, P. Avouris
In this work, we report the first electroluminescence results from suspended CNTFETs. We find not only an increase in quantum efficiency by 2-3 orders of magnitude, but a completely different dependence of the light emission on the electrical properties of the CNTFET. To fabricate a suspended CNTFET, we etched 2-10 mum wide trenches in 200 nm thick SiO2 on Si wafers
{"title":"Enhanced electroluminescence in suspended carbon nanotube transistors","authors":"J. Chen, M. Freitag, J. Tsang, Q. Fu, Jie Liu, P. Avouris","doi":"10.1109/DRC.2005.1553105","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553105","url":null,"abstract":"In this work, we report the first electroluminescence results from suspended CNTFETs. We find not only an increase in quantum efficiency by 2-3 orders of magnitude, but a completely different dependence of the light emission on the electrical properties of the CNTFET. To fabricate a suspended CNTFET, we etched 2-10 mum wide trenches in 200 nm thick SiO2 on Si wafers","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130423615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553145
A. Cappy, N. Widimann, S. Bolaert, X. Wallart, W. Knap
THz radiations present a great interest for applications in different fields ranging from telecommunications to sensors for biology and medicine. This paper reviews two new field effect devices especially suited for THz applications: double-gate HEMTs (DG-HEMT) and plasma wave transistors
{"title":"New HEMT structures for THz applications","authors":"A. Cappy, N. Widimann, S. Bolaert, X. Wallart, W. Knap","doi":"10.1109/DRC.2005.1553145","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553145","url":null,"abstract":"THz radiations present a great interest for applications in different fields ranging from telecommunications to sensors for biology and medicine. This paper reviews two new field effect devices especially suited for THz applications: double-gate HEMTs (DG-HEMT) and plasma wave transistors","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128963886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553040
A. Kikuchi, A. Manoshiro, I. Nomura, K. Kishino
Current injection lasing operation of ZnTe based yellow-green light semiconductor laser diodes (LDs) with ZnCdTe active layer and MgZnSeTe cladding layers have been achieved, for the first time. The lasing characteristics were evaluated with a single pulse current injection mode at low temperature. The lowest threshold current density of the LD was 2.7 kA/cm2 at 100 K. The maximum lasing temperature was 175 K and the observed lasing wavelength ranged from 564 to 576 nm
{"title":"Lasing operation of ZnTe based yellow-green laser diodes","authors":"A. Kikuchi, A. Manoshiro, I. Nomura, K. Kishino","doi":"10.1109/DRC.2005.1553040","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553040","url":null,"abstract":"Current injection lasing operation of ZnTe based yellow-green light semiconductor laser diodes (LDs) with ZnCdTe active layer and MgZnSeTe cladding layers have been achieved, for the first time. The lasing characteristics were evaluated with a single pulse current injection mode at low temperature. The lowest threshold current density of the LD was 2.7 kA/cm2 at 100 K. The maximum lasing temperature was 175 K and the observed lasing wavelength ranged from 564 to 576 nm","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114651815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553157
B. Kunert, K. Volz, J. Koch, T. Torunski, S. Reinhard, S. Borck, K. Hantke, J. Heber, W. Ruhle, W. Stolz
Realizing monolithic optoelectronic integrated circuits (OIECs) on silicon substrate would open up an exciting and completely new field of applications, i.e. optical interconnects at the chip level. In the past a lot of effort has been devoted to the growth of standard direct band gap III-V compound semiconductors on Si substrate, i.e. GaAs/Si or InP/Si. Due to the large lattice mismatch of these materials to the Si substrate large densities of threading dislocations are formed in the layers, preventing any long-term stable lasing operation of corresponding device structures. In this study the authors present a novel direct band gap material ( Ga(NAsP) ), which can be grown lattice-matched to GaP. Due to the similar lattice constant of GaP and Si, this novel material system might lead to the real monolithic integration of III/V-based optoelectronics and Si-based microelectronics in the near future
{"title":"Novel GaP-based dilute nitride Ga(NAsP)GaP laser material system","authors":"B. Kunert, K. Volz, J. Koch, T. Torunski, S. Reinhard, S. Borck, K. Hantke, J. Heber, W. Ruhle, W. Stolz","doi":"10.1109/DRC.2005.1553157","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553157","url":null,"abstract":"Realizing monolithic optoelectronic integrated circuits (OIECs) on silicon substrate would open up an exciting and completely new field of applications, i.e. optical interconnects at the chip level. In the past a lot of effort has been devoted to the growth of standard direct band gap III-V compound semiconductors on Si substrate, i.e. GaAs/Si or InP/Si. Due to the large lattice mismatch of these materials to the Si substrate large densities of threading dislocations are formed in the layers, preventing any long-term stable lasing operation of corresponding device structures. In this study the authors present a novel direct band gap material ( Ga(NAsP) ), which can be grown lattice-matched to GaP. Due to the similar lattice constant of GaP and Si, this novel material system might lead to the real monolithic integration of III/V-based optoelectronics and Si-based microelectronics in the near future","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125965352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553137
Z. Chen, J. Appenzeller, J. Knoch, Yu-Ming Lin, P. Avouris
This study investigates 38 CNFETs and shows that nearly 3 orders of magnitude current variation can be explained in a comprehensive way by the diameter variation among nanotubes alone. This is the first systematic analysis that correlates the device performance with the nanotube properties quantitatively. It also shows that one can neglect the impact of the preparation on the contact quality to a large extend
{"title":"Impact of the nanotube diameter on the performance of CNFETs","authors":"Z. Chen, J. Appenzeller, J. Knoch, Yu-Ming Lin, P. Avouris","doi":"10.1109/DRC.2005.1553137","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553137","url":null,"abstract":"This study investigates 38 CNFETs and shows that nearly 3 orders of magnitude current variation can be explained in a comprehensive way by the diameter variation among nanotubes alone. This is the first systematic analysis that correlates the device performance with the nanotube properties quantitatively. It also shows that one can neglect the impact of the preparation on the contact quality to a large extend","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126024833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553034
L. Coldren, J. Raring, J. Barton, M. Sysak, L. Johansson
Widely-tunable lasers and single-chip transmitters, in which such lasers are integrated with modulators and semiconductor-optical-amplifiers, have recently become the core of practical modules that are gaining wide-spread use in new wavelength-division-multiplexed systems. More-photonic advanced ICs have been demonstrated for use it advanced communication and sensor system
{"title":"Widely-tunable transmitters and photonic integrated circuits","authors":"L. Coldren, J. Raring, J. Barton, M. Sysak, L. Johansson","doi":"10.1109/DRC.2005.1553034","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553034","url":null,"abstract":"Widely-tunable lasers and single-chip transmitters, in which such lasers are integrated with modulators and semiconductor-optical-amplifiers, have recently become the core of practical modules that are gaining wide-spread use in new wavelength-division-multiplexed systems. More-photonic advanced ICs have been demonstrated for use it advanced communication and sensor system","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127189034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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