Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553035
R. Bugge, B. Fimland
A new design for tunable mid-IR lasers is proposed and demonstrated. The design involves a new quantum well structure with AlInGaAsSb barriers and InGaAsSb wells, a new rapid thermal annealing (RTA) processing step and a new design for a wet etched waveguide junction
{"title":"A novel tunable wet etched mid-IR pentenary AIInGaAsSb junction laser at 2.34-2.44 /spl mu/m","authors":"R. Bugge, B. Fimland","doi":"10.1109/DRC.2005.1553035","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553035","url":null,"abstract":"A new design for tunable mid-IR lasers is proposed and demonstrated. The design involves a new quantum well structure with AlInGaAsSb barriers and InGaAsSb wells, a new rapid thermal annealing (RTA) processing step and a new design for a wet etched waveguide junction","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125702744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553054
Shui-Jinn Wang, Shun-Cheng Chang, K. Uang, B. Liou
For the past decade, most of vertical device applications of GaN were processed by either wafer bonding or direct epitaxy on SiC or GaN wafer. However, the former usually suffers from large strain between GaN and bonding wafer because the high temperature and high pressure bonding process, and the later is not cost effective because of using SiC or GaN substrate. In this work, a novel vertical structure of Ni/n-GaN Schottky barrier diode (SBD) with metallic substrate employing nickel electroplating and laser lift-off (LLO) processes is proposed and its electrical characteristics is reported
{"title":"Vertical-structured Ni/n-GaN schottky diode with electroplating nickel substrate","authors":"Shui-Jinn Wang, Shun-Cheng Chang, K. Uang, B. Liou","doi":"10.1109/DRC.2005.1553054","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553054","url":null,"abstract":"For the past decade, most of vertical device applications of GaN were processed by either wafer bonding or direct epitaxy on SiC or GaN wafer. However, the former usually suffers from large strain between GaN and bonding wafer because the high temperature and high pressure bonding process, and the later is not cost effective because of using SiC or GaN substrate. In this work, a novel vertical structure of Ni/n-GaN Schottky barrier diode (SBD) with metallic substrate employing nickel electroplating and laser lift-off (LLO) processes is proposed and its electrical characteristics is reported","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"628 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116631149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553075
Yan Zhu, D. Zhao, Ruigang Li, Jianlin Liu
After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al2O3, HfO2 and Si4N3 et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory
{"title":"Self-aligned TiSi/sub 2/Si hetero-nanocrystal nonvolatile memory","authors":"Yan Zhu, D. Zhao, Ruigang Li, Jianlin Liu","doi":"10.1109/DRC.2005.1553075","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553075","url":null,"abstract":"After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub> and Si<sub>4</sub>N<sub>3</sub> et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131951400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553111
T. Palacios, A. Chakraborty, S. Keller, S. Denbaars, U. Mishra
In this work, we use an ultra-thin InGaN layer below the GaN channel to increase the confinement of the electrons. In this novel approach, the polarization induced electric field in the InGaN layer is used to raise the conduction band energy in the buffer layer with respect to the channel. With this technique, a double-heterojunction transistor can be formed without the need of a high bandgap or p-doped buffer. Poisson-Schrodinger simulations (Wu, et.al.) have confirmed the increased electron confinement at electron temperatures as high as 3000 K
{"title":"AlGaN/GaN HEMTs with an InGaN-based back-barrier","authors":"T. Palacios, A. Chakraborty, S. Keller, S. Denbaars, U. Mishra","doi":"10.1109/DRC.2005.1553111","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553111","url":null,"abstract":"In this work, we use an ultra-thin InGaN layer below the GaN channel to increase the confinement of the electrons. In this novel approach, the polarization induced electric field in the InGaN layer is used to raise the conduction band energy in the buffer layer with respect to the channel. With this technique, a double-heterojunction transistor can be formed without the need of a high bandgap or p-doped buffer. Poisson-Schrodinger simulations (Wu, et.al.) have confirmed the increased electron confinement at electron temperatures as high as 3000 K","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114702831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553097
Soyoun Jung, T. Jackson
In this paper, the authors report the first strain sensors using an organic semiconductor as the active element. The authors have used a doped organic semiconductor as the active element for low Young's modulus strain sensors. The sensor cross-section is shown. For these sensors 2 nm thick Ti and 20 nm thick Au were deposited on 50 micron thick polyimide substrates by thermal evaporation and patterned to form sensor electrodes and wiring. Next, a 50 nm thick pentacene layer was deposited, again by thermal evaporation. The pentacene layer was then doped p-type by exposure to a 1 % solution of ferric chloride in water. The doped pentacene film was then patterned using an aqueous polyvinyl alcohol photolithography step and oxygen reactive ion etching. The maximum process temperature used to fabricate the organic strain sensors is 110 degC
{"title":"Organic semiconductor strain sensors","authors":"Soyoun Jung, T. Jackson","doi":"10.1109/DRC.2005.1553097","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553097","url":null,"abstract":"In this paper, the authors report the first strain sensors using an organic semiconductor as the active element. The authors have used a doped organic semiconductor as the active element for low Young's modulus strain sensors. The sensor cross-section is shown. For these sensors 2 nm thick Ti and 20 nm thick Au were deposited on 50 micron thick polyimide substrates by thermal evaporation and patterned to form sensor electrodes and wiring. Next, a 50 nm thick pentacene layer was deposited, again by thermal evaporation. The pentacene layer was then doped p-type by exposure to a 1 % solution of ferric chloride in water. The doped pentacene film was then patterned using an aqueous polyvinyl alcohol photolithography step and oxygen reactive ion etching. The maximum process temperature used to fabricate the organic strain sensors is 110 degC","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116099267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553086
Mo Liu, C. Lent
This paper reports on the dynamic behavior of power dissipation in a clocked QCA majority gate. A distributed clocking scheme is employed in the QCA array to form a "computation wave" which moves smoothly across the circuit. The quantum dynamical calculation is done with coherence vector formalism with dissipation incorporated so that we can see power flowing to the environment, and also to and from the clocking circuit
{"title":"Power dissipation in clocked quantum-dot cellular automata circuits","authors":"Mo Liu, C. Lent","doi":"10.1109/DRC.2005.1553086","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553086","url":null,"abstract":"This paper reports on the dynamic behavior of power dissipation in a clocked QCA majority gate. A distributed clocking scheme is employed in the QCA array to form a \"computation wave\" which moves smoothly across the circuit. The quantum dynamical calculation is done with coherence vector formalism with dissipation incorporated so that we can see power flowing to the environment, and also to and from the clocking circuit","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123988626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553058
Jian Xu, A. Lakhtakia, J. Liou, D. Cui, M. Gerhold
In this paper, a novel microcavity light emitting device is demonstrated to produce pure circularly polarized light with simultaneous control over emission bandwidth and center wavelength. This is achieved by sandwiching fluorescent molecules (Alq3) between two sculptured thin film (STF) chiral reflectors to form a resonant microcavity device of circular polarization selectivity, and optically pumping the device with unpolarized violet light
{"title":"Circularly polarized light emission from microcavity light emitting devices based on sculptured chiral reflectors","authors":"Jian Xu, A. Lakhtakia, J. Liou, D. Cui, M. Gerhold","doi":"10.1109/DRC.2005.1553058","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553058","url":null,"abstract":"In this paper, a novel microcavity light emitting device is demonstrated to produce pure circularly polarized light with simultaneous control over emission bandwidth and center wavelength. This is achieved by sandwiching fluorescent molecules (Alq3) between two sculptured thin film (STF) chiral reflectors to form a resonant microcavity device of circular polarization selectivity, and optically pumping the device with unpolarized violet light","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124073690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553057
Yo‐Sheng Lin, Hsiao-Bin Liang, Chi-Chen Chen, Jia-lun Chen, Shey-Shi Lu
In this paper, a comprehensive analysis of the effect of small-signal intrinsic base resistance (Rbin) on the RF performances of InP-InGaAs (Gao et al., 2004), InGaP-GaAs (Bousnina et al., 2004), and SiGe HBTs are demonstrated for the first time. It was found that for these HBTs, both the real part of the equivalent input impedance (Re(Zin)) and the real part of the equivalent output impedance (Re(Zout)) increase with the increase of the intrinsic base resistance Rbin. Therefore, an increase of R bin (i.e. reducing the base doping, the base width, and the base edge length in the base contact side) makes the kink phenomena of both the scattering parameter S11 and S22 of these HBTs more obvious (Lu et al., 2001). These phenomena can be explained perfectly by our derived complete expressions of Zin and Z out at low and high frequencies. In addition, for relatively smaller Rbin, it was found that under constant collector-emitter voltage (VCE), an increase of base current (which corresponds to a decrease of base-emitter resistance (rpi ) and an increase of trans-conductance (gm)) enhances the anomalous dip. While for relatively larger Rbin, it was found that under constant VCE, an increase of base current obscures the anomalous dip. These phenomena can also be explained by our proposed theory
本文首次全面分析了小信号固有基电阻(Rbin)对InP-InGaAs (Gao et al.， 2004)、InGaP-GaAs (Bousnina et al.， 2004)和SiGe hbt射频性能的影响。结果表明，等效输入阻抗实部(Re(Zin))和等效输出阻抗实部(Re(Zout))均随着本禀基极电阻Rbin的增大而增大。因此，R bin的增加(即减少基底掺杂、基底宽度和基底接触侧基底边缘长度)会使这些HBTs的散射参数S11和S22的扭结现象更加明显(Lu et al.， 2001)。这些现象可以用我们推导出的Zin和zout在低频和高频下的完整表达式来很好地解释。此外，对于相对较小的Rbin，发现在恒定的集电极-发射极电压(VCE)下，基极电流的增加(对应于基极-发射极电阻(rpi)的降低和跨导(gm)的增加)增强了异常倾角。而对于相对较大的Rbin，在VCE不变的情况下，基极电流的增加掩盖了异常倾角。这些现象也可以用我们提出的理论来解释
{"title":"Small-signal intrinsic base resistance effect on InP-InGaAs, InGaP-GaAs and SiGe HBTs","authors":"Yo‐Sheng Lin, Hsiao-Bin Liang, Chi-Chen Chen, Jia-lun Chen, Shey-Shi Lu","doi":"10.1109/DRC.2005.1553057","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553057","url":null,"abstract":"In this paper, a comprehensive analysis of the effect of small-signal intrinsic base resistance (R<sub>bin</sub>) on the RF performances of InP-InGaAs (Gao et al., 2004), InGaP-GaAs (Bousnina et al., 2004), and SiGe HBTs are demonstrated for the first time. It was found that for these HBTs, both the real part of the equivalent input impedance (Re(Z<sub>in</sub>)) and the real part of the equivalent output impedance (Re(Z<sub>out</sub>)) increase with the increase of the intrinsic base resistance R<sub>bin</sub>. Therefore, an increase of R <sub>bin</sub> (i.e. reducing the base doping, the base width, and the base edge length in the base contact side) makes the kink phenomena of both the scattering parameter S<sub>11</sub> and S<sub>22</sub> of these HBTs more obvious (Lu et al., 2001). These phenomena can be explained perfectly by our derived complete expressions of Z<sub>in</sub> and Z <sub>out</sub> at low and high frequencies. In addition, for relatively smaller R<sub>bin</sub>, it was found that under constant collector-emitter voltage (V<sub>CE</sub>), an increase of base current (which corresponds to a decrease of base-emitter resistance (r<sub>pi </sub>) and an increase of trans-conductance (g<sub>m</sub>)) enhances the anomalous dip. While for relatively larger R<sub>bin</sub>, it was found that under constant V<sub>CE</sub>, an increase of base current obscures the anomalous dip. These phenomena can also be explained by our proposed theory","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131465675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553114
A. Aaarwal, J. Haley, H. Bartlow, B. McCalpin, C. Capell, J. Palmour
4H-SiC RF bipolar junction transistors (BJTs) have been designed and tested at 425 MHz. Twenty four cells representing approximately 24 inches of emitter periphery were packaged and tested at 425 MHz in common emitter, Class C mode with a 75 V power supply voltage. The pulse width was 2 mus and duty cycle 1%. The total output power was measured to be 2100 W with a power gain of 6.3 dB, collector efficiency of 45% and power added efficiency of 35%. This is the first time, SiC BJTs have been used to produce an output power in excess of 2 kW at 425 MHz. Although the gain and PAE are not very high, the individual cells are capable of producing 50 W with a gain of 9.3 dB and 51% collector efficiency (Agarwal, 2002). By further optimization of the device design, cell layout, the input and output match, and by increasing the power supply voltage to 120 V, it is expected that the output power, gain and efficiency can be further improved
{"title":"2100 W at 425 MHz with SiC RF power BJTs","authors":"A. Aaarwal, J. Haley, H. Bartlow, B. McCalpin, C. Capell, J. Palmour","doi":"10.1109/DRC.2005.1553114","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553114","url":null,"abstract":"4H-SiC RF bipolar junction transistors (BJTs) have been designed and tested at 425 MHz. Twenty four cells representing approximately 24 inches of emitter periphery were packaged and tested at 425 MHz in common emitter, Class C mode with a 75 V power supply voltage. The pulse width was 2 mus and duty cycle 1%. The total output power was measured to be 2100 W with a power gain of 6.3 dB, collector efficiency of 45% and power added efficiency of 35%. This is the first time, SiC BJTs have been used to produce an output power in excess of 2 kW at 425 MHz. Although the gain and PAE are not very high, the individual cells are capable of producing 50 W with a gain of 9.3 dB and 51% collector efficiency (Agarwal, 2002). By further optimization of the device design, cell layout, the input and output match, and by increasing the power supply voltage to 120 V, it is expected that the output power, gain and efficiency can be further improved","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127654191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-22DOI: 10.1109/DRC.2005.1553062
S. Mallik, K. Hultquist, S. Ghosh, S. Velicu, Hye-Son Jung
Modern weapon systems need to detect, recognize, and track a variety of targets under a wide spectrum of atmospheric conditions. They include stationary and mobile targets against complex backgrounds and landmines. A number of active systems like hybrid LIDAR-RADAR systems, heterodyne detection as well as passive systems like thermal imagers have been proposed and developed to meet this objective. Most ground-based and air-based systems would operate at long distances. The return laser signal from the target is not only attenuated by absorption, reflection and scattering by air-borne gas, dust and liquid particles, but also by the emissivity and reflectivity variations of the target surface. High bandwidth detectors with internal gain are required. Avalanche photodetectors (APDs) are best suited for this purpose due to their high gain-bandwidth characteristics. Robust silicon-APDs are limited to visible and very near infrared region, while InGaAs works well up to certain wavelengths. On the other hand, it is important to realize that the atmospheric attenuation is wavelength dependent. Local changes in the air density yield random fluctuations in the refractive index, diverging the laser signal. Consequently, longer wavelength (MWIR: 3 - 5mum and LWIR: 8 -12mu m) source-detector systems are required to overcome the practical and seasonal conditions of the atmosphere. Previous efforts on HgCdTe APDs has been based on expensive CdZnTe substrates . The paper reports on the first HgCdTe based MWIR (3 - 5mum) APD grown on Si substrates by molecular beam epitaxy(MBE)
{"title":"MBE grown mid-infrared HgCdTe avalanche photodiodes on Si substrates","authors":"S. Mallik, K. Hultquist, S. Ghosh, S. Velicu, Hye-Son Jung","doi":"10.1109/DRC.2005.1553062","DOIUrl":"https://doi.org/10.1109/DRC.2005.1553062","url":null,"abstract":"Modern weapon systems need to detect, recognize, and track a variety of targets under a wide spectrum of atmospheric conditions. They include stationary and mobile targets against complex backgrounds and landmines. A number of active systems like hybrid LIDAR-RADAR systems, heterodyne detection as well as passive systems like thermal imagers have been proposed and developed to meet this objective. Most ground-based and air-based systems would operate at long distances. The return laser signal from the target is not only attenuated by absorption, reflection and scattering by air-borne gas, dust and liquid particles, but also by the emissivity and reflectivity variations of the target surface. High bandwidth detectors with internal gain are required. Avalanche photodetectors (APDs) are best suited for this purpose due to their high gain-bandwidth characteristics. Robust silicon-APDs are limited to visible and very near infrared region, while InGaAs works well up to certain wavelengths. On the other hand, it is important to realize that the atmospheric attenuation is wavelength dependent. Local changes in the air density yield random fluctuations in the refractive index, diverging the laser signal. Consequently, longer wavelength (MWIR: 3 - 5mum and LWIR: 8 -12mu m) source-detector systems are required to overcome the practical and seasonal conditions of the atmosphere. Previous efforts on HgCdTe APDs has been based on expensive CdZnTe substrates . The paper reports on the first HgCdTe based MWIR (3 - 5mum) APD grown on Si substrates by molecular beam epitaxy(MBE)","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128933734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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