Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636911
J. Smuk, P. Katzin
We describe the design and measured performance of GaAs MMIC phase-locked oscillators (PLOs) operating concurrently at 1.353 GHz and 2.030 GHz. All the active components, including reference oscillator, phase/frequency comparators, charge pumps, voltage controlled oscillators (VCOs) and frequency dividers, are integrated on GaAs MMICs. The packaged MMICs are attached to a duroid mother board along with a small number of discrete components, resulting in a rugged dual PLO subassembly. Single sideband phase noise at 1 kHz offset is -87 dBc/Hz and -84 dBc/Hz, respectively. Phase lock is maintained over wide variations of temperature and power supply voltage.
{"title":"MMIC phase locked L-S band oscillators","authors":"J. Smuk, P. Katzin","doi":"10.1109/GAAS.1994.636911","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636911","url":null,"abstract":"We describe the design and measured performance of GaAs MMIC phase-locked oscillators (PLOs) operating concurrently at 1.353 GHz and 2.030 GHz. All the active components, including reference oscillator, phase/frequency comparators, charge pumps, voltage controlled oscillators (VCOs) and frequency dividers, are integrated on GaAs MMICs. The packaged MMICs are attached to a duroid mother board along with a small number of discrete components, resulting in a rugged dual PLO subassembly. Single sideband phase noise at 1 kHz offset is -87 dBc/Hz and -84 dBc/Hz, respectively. Phase lock is maintained over wide variations of temperature and power supply voltage.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129932029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636923
P. Sherhart, M.D. Upton, R. Lomax, R.B. Brown
A bidirectional I/O pad for digital GaAs applications has been designed, fabricated, and tested using Vitesse Semiconductor process technology. The I/O pad is designed to operate at frequencies up to 500 MHz and at GTL, ECL, or Rambus voltage levels. The I/O pads can be calibrated to these voltage levels either manually using external signals or internally using on-chip digital calibration logic.
{"title":"A variable-voltage bidirectional I/O pad for digital GaAs applications","authors":"P. Sherhart, M.D. Upton, R. Lomax, R.B. Brown","doi":"10.1109/GAAS.1994.636923","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636923","url":null,"abstract":"A bidirectional I/O pad for digital GaAs applications has been designed, fabricated, and tested using Vitesse Semiconductor process technology. The I/O pad is designed to operate at frequencies up to 500 MHz and at GTL, ECL, or Rambus voltage levels. The I/O pads can be calibrated to these voltage levels either manually using external signals or internally using on-chip digital calibration logic.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130373663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636954
R. Gold
Television has been a key driver in the development of GaAs MMIC technology. A succession of techniques for video distribution-from 4 GHz TVRO to 28 GHz LMDS-has been enabled by the unique capabilities of GaAs MMICs. In turn, these markets have provided a steadily-growing outlet for semiconductor producers. One specific example, a GaAs MMIC-based rooftop receiver for 2.5 GHz "wireless cable TV", is illustrative of the impact of the technology, with over 250,000 units shipped to date. In this case, the performance advantages of GaAs MMICs were secondary. Size and cost reduction were the real market enablers, but only when the system-level design was opened up to exploit the technology's true leverage.
{"title":"Applications of GaAs ICs in video distribution","authors":"R. Gold","doi":"10.1109/GAAS.1994.636954","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636954","url":null,"abstract":"Television has been a key driver in the development of GaAs MMIC technology. A succession of techniques for video distribution-from 4 GHz TVRO to 28 GHz LMDS-has been enabled by the unique capabilities of GaAs MMICs. In turn, these markets have provided a steadily-growing outlet for semiconductor producers. One specific example, a GaAs MMIC-based rooftop receiver for 2.5 GHz \"wireless cable TV\", is illustrative of the impact of the technology, with over 250,000 units shipped to date. In this case, the performance advantages of GaAs MMICs were secondary. Size and cost reduction were the real market enablers, but only when the system-level design was opened up to exploit the technology's true leverage.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127728373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636978
W. Roesch, R. Winters, A. Rubalcava, B. Ingle
A series of investigations into reliability effects of moisture on GaAs structures have lead to the conclusion that GaAs devices have resistance to degradation effects of humidity. This not only provides evidence that GaAs devices are ready for low-cost non-hermetic packages, but that GaAs ICs may have superior reliability performance compared to silicon devices under accelerated humidity conditions.
{"title":"Humidity resistance of GaAs ICs","authors":"W. Roesch, R. Winters, A. Rubalcava, B. Ingle","doi":"10.1109/GAAS.1994.636978","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636978","url":null,"abstract":"A series of investigations into reliability effects of moisture on GaAs structures have lead to the conclusion that GaAs devices have resistance to degradation effects of humidity. This not only provides evidence that GaAs devices are ready for low-cost non-hermetic packages, but that GaAs ICs may have superior reliability performance compared to silicon devices under accelerated humidity conditions.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"47 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120987573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636969
M. Shikata, A. Nishino, R. Shigemasa, H. Fujishiro, S. Nishi, T. Ushikubo
A decision circuit with a function of detecting the phase difference between the input data signal and the clock signal is presented. The novel circuit technology has been used for the phase detectors. A linear and wide-rage phase detection was achieved as well as a wide phase margin of 288/spl deg/ and a small decision ambiguity of 27 mVPP up to 10 Gb/s.
{"title":"A decision circuit with phase detectors for 10 Gb/s optical communication systems","authors":"M. Shikata, A. Nishino, R. Shigemasa, H. Fujishiro, S. Nishi, T. Ushikubo","doi":"10.1109/GAAS.1994.636969","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636969","url":null,"abstract":"A decision circuit with a function of detecting the phase difference between the input data signal and the clock signal is presented. The novel circuit technology has been used for the phase detectors. A linear and wide-rage phase detection was achieved as well as a wide phase margin of 288/spl deg/ and a small decision ambiguity of 27 mVPP up to 10 Gb/s.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"4 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120807458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636991
Dong Yi, Zeng Qingming, Cai Keli, Zhang Keqiang
We report the fabrication and testing of a wideband and high slew-rate voltage-mode operational amplifier using AlGaAs/GaAs HBTs. The fabrication process showed that a higher carbon doping concentration is more effective to reducing base resistance and gives a good steadiness of process. The specific contact resistivity of base measured by TLM was 6.4/spl times/10/sup -7/ /spl Omega/.cm/sup 2/ at the base doping concentration 4/spl times/10/sup 19/ cm/sup 3/ by using a AuZu/Au alloy. The HBT operational amplifier has provided 500 v//spl mu/s high slew-rate, only 8 ns settling time and about 2 GHz unity-gain frequency. The circuit structure gave CMRR values in the order of 70 dB.
{"title":"Integrated AlGaAs/GaAs HBT high speed operational amplifier","authors":"Dong Yi, Zeng Qingming, Cai Keli, Zhang Keqiang","doi":"10.1109/GAAS.1994.636991","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636991","url":null,"abstract":"We report the fabrication and testing of a wideband and high slew-rate voltage-mode operational amplifier using AlGaAs/GaAs HBTs. The fabrication process showed that a higher carbon doping concentration is more effective to reducing base resistance and gives a good steadiness of process. The specific contact resistivity of base measured by TLM was 6.4/spl times/10/sup -7/ /spl Omega/.cm/sup 2/ at the base doping concentration 4/spl times/10/sup 19/ cm/sup 3/ by using a AuZu/Au alloy. The HBT operational amplifier has provided 500 v//spl mu/s high slew-rate, only 8 ns settling time and about 2 GHz unity-gain frequency. The circuit structure gave CMRR values in the order of 70 dB.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116023600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636959
J. Osepchuk
It is likely that some emerging technologies, which are a market for GaAs IC will be slowed by factors which are an outgrowth of today's "EMF" controversy. Questions of safety for human exposure to electromagnetic energy associated with electronic systems are not based on rational comparisons to science-based standards but on media and public perceptions and stimulation from the legal community. There is, today, significant "Electrophobia" and spreading exploitation of this phobia. Increased support is needed for committees which deal with setting standards or with public education, like the IEEE Committee on Man and Radiation (COMAR). It can be foreseen that the eventual concern about environmental electromagnetic energies associated with emerging technologies will relate to the susceptibility to interference of ICs in the face of greatly expanding uses of electromagnetic energy for wireless and also for non-communication uses. Today there is an international program to eliminate the excess noise radiated from microwave ovens. In the future, space transmission of huge amounts of power signals an ultimate challenge for electromagnetic compatibility with future systems employing the GaAs IC.
{"title":"Impact of the \"EMF\" controversy on emerging technologies: good or bad","authors":"J. Osepchuk","doi":"10.1109/GAAS.1994.636959","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636959","url":null,"abstract":"It is likely that some emerging technologies, which are a market for GaAs IC will be slowed by factors which are an outgrowth of today's \"EMF\" controversy. Questions of safety for human exposure to electromagnetic energy associated with electronic systems are not based on rational comparisons to science-based standards but on media and public perceptions and stimulation from the legal community. There is, today, significant \"Electrophobia\" and spreading exploitation of this phobia. Increased support is needed for committees which deal with setting standards or with public education, like the IEEE Committee on Man and Radiation (COMAR). It can be foreseen that the eventual concern about environmental electromagnetic energies associated with emerging technologies will relate to the susceptibility to interference of ICs in the face of greatly expanding uses of electromagnetic energy for wireless and also for non-communication uses. Today there is an international program to eliminate the excess noise radiated from microwave ovens. In the future, space transmission of huge amounts of power signals an ultimate challenge for electromagnetic compatibility with future systems employing the GaAs IC.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132647335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636916
W. Ho, M. Chang, S. Beccue, P. Zampardi, J. Yu, A. Sailer, R. Pierson, W.C. Wang
A GaAs BiFET LSI technology has been successfully developed for low power, mixed mode communication circuit applications. The direct placement of the FET on the HBT emitter cap layer simplifies the device epitaxial growth and process integration. High integration levels and functional circuit yield have been achieved. Excellent HBT and FET characteristics have been produced with the noise figure of the FETs comparable to those of traditional MESFETs, enabling them to perform well in front end receiver applications. Through this technology, several LSI circuits, including 32-bit by 2-bit shift registers and a single-chip DRFM have been successfully demonstrated.
{"title":"A GaAs BiFET LSI technology","authors":"W. Ho, M. Chang, S. Beccue, P. Zampardi, J. Yu, A. Sailer, R. Pierson, W.C. Wang","doi":"10.1109/GAAS.1994.636916","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636916","url":null,"abstract":"A GaAs BiFET LSI technology has been successfully developed for low power, mixed mode communication circuit applications. The direct placement of the FET on the HBT emitter cap layer simplifies the device epitaxial growth and process integration. High integration levels and functional circuit yield have been achieved. Excellent HBT and FET characteristics have been produced with the noise figure of the FETs comparable to those of traditional MESFETs, enabling them to perform well in front end receiver applications. Through this technology, several LSI circuits, including 32-bit by 2-bit shift registers and a single-chip DRFM have been successfully demonstrated.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127353101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636925
A. Chandna, Richard B. Brown, D. Putti, C. Kibler
This paper describes a new logic style called Power Rail Logic (PRL) which is compatible with DCFL circuits. Multiplexors, latches, flip-flops and exclusive-OR gates can be built using this logic style. Compared to DCFL, PRL uses fewer transistors, has larger noise margins, and up to 40% lower power-delay products. A test chip containing 32-bit barrel shifters designed in DCFL and in PRL, were successfully fabricated and tested. Test results are given for both circuits.
{"title":"Power rail logic: a low power logic style for digital GaAs circuits","authors":"A. Chandna, Richard B. Brown, D. Putti, C. Kibler","doi":"10.1109/GAAS.1994.636925","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636925","url":null,"abstract":"This paper describes a new logic style called Power Rail Logic (PRL) which is compatible with DCFL circuits. Multiplexors, latches, flip-flops and exclusive-OR gates can be built using this logic style. Compared to DCFL, PRL uses fewer transistors, has larger noise margins, and up to 40% lower power-delay products. A test chip containing 32-bit barrel shifters designed in DCFL and in PRL, were successfully fabricated and tested. Test results are given for both circuits.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128154997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636947
L.W. Yang, J. Komiak, D.P. Smith, M. Kao, R. S. Brozovich, K. Nordheden, D. Helms, D. Houston, F. Bardsley
A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell achieved 72% PAE with 0.17 W at 6 GHz. The two tone saturated power of the MMIC achieved 36.4% PAE at 10 GHz. The IMD is 30 dBc at 5 dB back-off from 2 dB gain compression.
{"title":"Manufacturing technology for high performance HBT linear power amplifiers","authors":"L.W. Yang, J. Komiak, D.P. Smith, M. Kao, R. S. Brozovich, K. Nordheden, D. Helms, D. Houston, F. Bardsley","doi":"10.1109/GAAS.1994.636947","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636947","url":null,"abstract":"A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell achieved 72% PAE with 0.17 W at 6 GHz. The two tone saturated power of the MMIC achieved 36.4% PAE at 10 GHz. The IMD is 30 dBc at 5 dB back-off from 2 dB gain compression.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121720717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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