Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636975
G. Rohmer, J. Sauerer, D. Seitzer, U. Nowotny, B. Raynor, J. Schneider
A feedforward T/H was developed as past of a 200 MSps/10 bit successive approximation ADC using a 0.3 /spl mu/m AlGaAs-HEMT process. This T/H is able to operate up to a clock frequency of 3 GHz and reaches a THD/spl ges/60 dB up to the Nyquist frequency of the ADC at the nominal clock frequency of 800 MHz. This was realized using a special circuit structure with a signal path and a reference path and a new diode bridge switch with an additional auxiliary bridge.
{"title":"An 800 MSps track and hold using a 0.3 /spl mu/m AlGaAs-HEMT-technology","authors":"G. Rohmer, J. Sauerer, D. Seitzer, U. Nowotny, B. Raynor, J. Schneider","doi":"10.1109/GAAS.1994.636975","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636975","url":null,"abstract":"A feedforward T/H was developed as past of a 200 MSps/10 bit successive approximation ADC using a 0.3 /spl mu/m AlGaAs-HEMT process. This T/H is able to operate up to a clock frequency of 3 GHz and reaches a THD/spl ges/60 dB up to the Nyquist frequency of the ADC at the nominal clock frequency of 800 MHz. This was realized using a special circuit structure with a signal path and a reference path and a new diode bridge switch with an additional auxiliary bridge.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115712548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636985
D. Dawson
This paper addresses the thermal management issues associated with fabricating microwave power devices. Thermal management of microwave devices includes: modeling thermal resistance with techniques such as Green's function/method of images, conformal map, finite element, spectral domain, and Fourier series; measurement techniques such as improved IR, self heating, laser probing, and direct thermocouple measurement; and layout and fabrication alternatives such as silicon substrates, shunt metal paths, and selective thinning that allow smaller form factors while maintaining or reducing thermal resistance. Examples of several device layout and fabrication approaches (MESFET, HBT, PHEMT) show how high frequency performance and low thermal resistance can be part of the unit cell design.
{"title":"Thermal modeling, measurements and design considerations of GaAs microwave devices","authors":"D. Dawson","doi":"10.1109/GAAS.1994.636985","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636985","url":null,"abstract":"This paper addresses the thermal management issues associated with fabricating microwave power devices. Thermal management of microwave devices includes: modeling thermal resistance with techniques such as Green's function/method of images, conformal map, finite element, spectral domain, and Fourier series; measurement techniques such as improved IR, self heating, laser probing, and direct thermocouple measurement; and layout and fabrication alternatives such as silicon substrates, shunt metal paths, and selective thinning that allow smaller form factors while maintaining or reducing thermal resistance. Examples of several device layout and fabrication approaches (MESFET, HBT, PHEMT) show how high frequency performance and low thermal resistance can be part of the unit cell design.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115483807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636943
T.M. Smith
This paper describes TriQuint's yield improvement efforts and results for our ion implanted, recessed-gate, MESFET IC processes. It discusses how we approached fab line yield improvement, the techniques that were utilized, some of the lessons learned, and the results achieved from 1989 to present.
{"title":"Wafer fab line yield improvement at TriQuint semiconductor","authors":"T.M. Smith","doi":"10.1109/GAAS.1994.636943","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636943","url":null,"abstract":"This paper describes TriQuint's yield improvement efforts and results for our ion implanted, recessed-gate, MESFET IC processes. It discusses how we approached fab line yield improvement, the techniques that were utilized, some of the lessons learned, and the results achieved from 1989 to present.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125951608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636958
Kwang-Jun Youn, Jeon-Wook Yang, Chang-Seok Lee, Min-Kun Kim, S. Kang, Seong-Su Park, Dong-Goo Kim, Chul Soon Park, I. Hwang, Hyung‐Moo Park, S. Park
A 1.5 V operating GaAs 2/spl sim/9 GHz ultrawide-band MMIC amplifier for portable wireless LAN, microwave link and satellite communication applications has been developed. This amplifier has 16/spl plusmn/1 dB gain and more than 10 dB input and output return loss in the 2/spl sim/9 GHz frequency range with 118 mA operating current. Measured 1-dB compression power is 13 dBm at 0 dBm input power and minimum noise figure is 4.8 dB. When operated at 3 V and 128 mA, this amplifier has up to 18/spl plusmn/1 dB gain, 18 dBm 1-dB compression power, more than 10 dB return loss and 4.9 dB minimum noise figure.
{"title":"1.5 V ultrawide-band GaAs monolithic amplifier for portable wireless LAN and satellite communication applications","authors":"Kwang-Jun Youn, Jeon-Wook Yang, Chang-Seok Lee, Min-Kun Kim, S. Kang, Seong-Su Park, Dong-Goo Kim, Chul Soon Park, I. Hwang, Hyung‐Moo Park, S. Park","doi":"10.1109/GAAS.1994.636958","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636958","url":null,"abstract":"A 1.5 V operating GaAs 2/spl sim/9 GHz ultrawide-band MMIC amplifier for portable wireless LAN, microwave link and satellite communication applications has been developed. This amplifier has 16/spl plusmn/1 dB gain and more than 10 dB input and output return loss in the 2/spl sim/9 GHz frequency range with 118 mA operating current. Measured 1-dB compression power is 13 dBm at 0 dBm input power and minimum noise figure is 4.8 dB. When operated at 3 V and 128 mA, this amplifier has up to 18/spl plusmn/1 dB gain, 18 dBm 1-dB compression power, more than 10 dB return loss and 4.9 dB minimum noise figure.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126485930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636922
H. Yamada, M. Tunotani, F. Kaneyama, S. Seki
2.5 Gb/s 8/spl times/8 self-routing switch LSIs have been developed for the asynchronous transfer mode (ATM) switching systems. The basic architecture of this switch is a Batcher-Banyan network. This switching system consists of three LSIs using a 0.5 /spl mu/m gate GaAs MESFET technology. These LSIs are a switching network LSI for exchanging packet cells, a "NEMAWASHI" network LSI for previously detecting the cells with the same output port address, and a demultiplexer LSI for converting the cells from the switching network into the eight streams per a channel. These LSIs are mounted in a 520 pin multi-chip module package. The number of total logic gates is 13.3 k, and the power dissipation is 24 W. The switching system fully operates at a data rate of 2.6 Gb/s, and the throughput is 20.8 Gb/s.
{"title":"2.5 Gb/s 8/spl times/8 self-routing switch GaAs LSIs for ATM switching systems","authors":"H. Yamada, M. Tunotani, F. Kaneyama, S. Seki","doi":"10.1109/GAAS.1994.636922","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636922","url":null,"abstract":"2.5 Gb/s 8/spl times/8 self-routing switch LSIs have been developed for the asynchronous transfer mode (ATM) switching systems. The basic architecture of this switch is a Batcher-Banyan network. This switching system consists of three LSIs using a 0.5 /spl mu/m gate GaAs MESFET technology. These LSIs are a switching network LSI for exchanging packet cells, a \"NEMAWASHI\" network LSI for previously detecting the cells with the same output port address, and a demultiplexer LSI for converting the cells from the switching network into the eight streams per a channel. These LSIs are mounted in a 520 pin multi-chip module package. The number of total logic gates is 13.3 k, and the power dissipation is 24 W. The switching system fully operates at a data rate of 2.6 Gb/s, and the throughput is 20.8 Gb/s.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128006701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636938
D. Hollmann, R. Heilig, G. Baumann
A millimeter-wave GaAs HEMT MMIC distributed mixer covering the RF frequency range from 10 to 50 GHz with IF frequencies from several MHz to 5 GHz was developed. The active devices are AlGaAs-GaAs HEMTs with a gatelength of 0.2 /spl mu/m and a gatewidth of 2/spl times/25 /spl mu/m. The conversion gain of the mixer is better than -3 dB over the frequency range at an LO power of less than 5 dBm without IF amplification. The RF and the LO signals are fed through an active distributed combiner with 2 dB gain and LO to RF port isolation of 20 dB. The size of the single mixer is 1.5/spl times/1 mm/sup 2/ and of the combiner including bias networks is 2/spl times/1 mm/sup 2/. An integrated broadband mixer chip including the LO and RF combiner was fabricated with a size of 4/spl times/1 mm/sup 2/.
{"title":"A monolithic broadband 10-50 GHz distributed HEMT mixer including active LO-RF combiner","authors":"D. Hollmann, R. Heilig, G. Baumann","doi":"10.1109/GAAS.1994.636938","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636938","url":null,"abstract":"A millimeter-wave GaAs HEMT MMIC distributed mixer covering the RF frequency range from 10 to 50 GHz with IF frequencies from several MHz to 5 GHz was developed. The active devices are AlGaAs-GaAs HEMTs with a gatelength of 0.2 /spl mu/m and a gatewidth of 2/spl times/25 /spl mu/m. The conversion gain of the mixer is better than -3 dB over the frequency range at an LO power of less than 5 dBm without IF amplification. The RF and the LO signals are fed through an active distributed combiner with 2 dB gain and LO to RF port isolation of 20 dB. The size of the single mixer is 1.5/spl times/1 mm/sup 2/ and of the combiner including bias networks is 2/spl times/1 mm/sup 2/. An integrated broadband mixer chip including the LO and RF combiner was fabricated with a size of 4/spl times/1 mm/sup 2/.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"88 22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126316272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636996
J. Putnam, M. Fukuda, P. Staecker, Y. Yun
This paper presents the design, fabrication, and performance of a 94 GHz monolithic PIN diode SPDT switch. The switch uses a vertical PIN diode structure to achieve insertion loss of 1.0 dB and isolation greater than 30 dB at 94 GHz, The circuits were fabricated on semi-insulating GaAs wafers with MOCVD grown p+, i, and n+ layers. An AlGaAs layer was used as an etch stop in the fabrication of the backside via hole. Measurements were made in a fixture containing transitions from WR-10 waveguide to quartz microstrip and from the quartz microstrip to the MMIC chip.
{"title":"A 94 GHz monolithic switch with a vertical PIN diode structure","authors":"J. Putnam, M. Fukuda, P. Staecker, Y. Yun","doi":"10.1109/GAAS.1994.636996","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636996","url":null,"abstract":"This paper presents the design, fabrication, and performance of a 94 GHz monolithic PIN diode SPDT switch. The switch uses a vertical PIN diode structure to achieve insertion loss of 1.0 dB and isolation greater than 30 dB at 94 GHz, The circuits were fabricated on semi-insulating GaAs wafers with MOCVD grown p+, i, and n+ layers. An AlGaAs layer was used as an etch stop in the fabrication of the backside via hole. Measurements were made in a fixture containing transitions from WR-10 waveguide to quartz microstrip and from the quartz microstrip to the MMIC chip.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129563265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636972
J. Jensen, A. Cosand, W. Stanchina, R. Walden, T. Lui, Y. Brown, M. Montes, K. Elliott, C. Kirkpatrick
For high resolution analog circuits we have developed a double heterostructure bipolar transistor (DHBT) technology using InP as the collector material. Our baseline DHBTs have demonstrated current gain /spl beta/, early voltage V/sub A/, f/sub T/, and f/sub max/ of 55, 100 V, 70 GHz, and 60 GHz, respectively. We have implemented an analog cell library to build high resolution /spl Delta//spl Sigma/ modulator circuits in this technology. We have used the cell library to demonstrate a first order modulator and to verify the design of these analog cells. At a sample rate of 4 GSPS and an OSR equal to 32 (i.e., input bandwidth of 62.5 MHz) the first order modulator demonstrated an SNR of 40.3 dB. This first order modulator operates using /spl plusmn/5 V power supplies and dissipates 572 mW.
{"title":"Double heterostructure InP HBT technology for high resolution A/D converters","authors":"J. Jensen, A. Cosand, W. Stanchina, R. Walden, T. Lui, Y. Brown, M. Montes, K. Elliott, C. Kirkpatrick","doi":"10.1109/GAAS.1994.636972","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636972","url":null,"abstract":"For high resolution analog circuits we have developed a double heterostructure bipolar transistor (DHBT) technology using InP as the collector material. Our baseline DHBTs have demonstrated current gain /spl beta/, early voltage V/sub A/, f/sub T/, and f/sub max/ of 55, 100 V, 70 GHz, and 60 GHz, respectively. We have implemented an analog cell library to build high resolution /spl Delta//spl Sigma/ modulator circuits in this technology. We have used the cell library to demonstrate a first order modulator and to verify the design of these analog cells. At a sample rate of 4 GSPS and an OSR equal to 32 (i.e., input bandwidth of 62.5 MHz) the first order modulator demonstrated an SNR of 40.3 dB. This first order modulator operates using /spl plusmn/5 V power supplies and dissipates 572 mW.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129361651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636907
A. Ignatiev, C. Horton, M. Sterling, R. Sega, A. Bensaoula, A. Freundlich, S. Pei
GaAs films, both silicon doped and undoped, have been deposited by Molecular Beam Epitaxy (MBE) in Low Earth Orbit (LEO) in an ultra vacuum environment created by the Wake Shield Facility (WSF). The WSF is a 12 foot diameter stainless steel disk that sweeps out a volume of space thus creating an ultra vacuum in its wake. It was developed specifically to take advantage of the ultra vacuum for the deposition of thin film materials. The WSF was flown for the first time on STS-60 in February, 1994. The mission objectives were to measure the unique wake vacuum environment formed by the Wake Shield, and to epitaxially deposit GaAs thin films. In this paper we describe the films deposited and report on the characterization performed to date. Films were deposited in two basic structures. The first structure consisted of undoped GaAs films of thicknesses ranging from 2 to 4 /spl mu/m with a thin (/spl ap/200 mn) highly silicon doped layer (n/spl ap/5/spl times/10/sup 17//cc) on top. This is basically a metal-semiconductor field effect transistor (MESFET) structure. The second structure was a lightly silicon doped GaAs film (n/spl ap/5/spl times/10/sup 15//cc). We have obtained Photoluminescence (PL), Secondary Ion Mass Spectrometry (SIMS) and X-Ray diffraction data on selected films. The data indicate nominal quality single crystal films with oxygen and carbon contamination. The source of the contamination and further characterization are discussed.
采用分子束外延(MBE)技术，在低地球轨道(LEO)的超真空环境中制备了掺杂和未掺杂的砷化镓薄膜。WSF是一个直径12英尺的不锈钢圆盘，可以扫出一定体积的空间，从而在其尾迹中产生超真空。它是专门为利用超真空沉积薄膜材料而开发的。WSF于1994年2月首次在STS-60上飞行。任务目标是测量尾流屏蔽形成的独特的尾流真空环境，并外延沉积GaAs薄膜。在本文中，我们描述了沉积的薄膜，并报告了迄今为止所进行的表征。薄膜沉积成两种基本结构。第一种结构由厚度为2 ~ 4 /spl μ m的未掺杂GaAs薄膜组成，薄膜上有薄层(/spl μ m /200 mn)高硅掺杂层(n/spl μ m /5/spl倍/10/sup 17//cc)。这基本上是一个金属半导体场效应晶体管(MESFET)结构。第二种结构是轻硅掺杂的GaAs膜(n/spl /5/spl × /10/sup / 15//cc)。我们获得了所选薄膜的光致发光(PL)、二次离子质谱(SIMS)和x射线衍射数据。数据表明，标称质量单晶膜与氧和碳污染。讨论了污染的来源和进一步的表征。
{"title":"Advanced III-V materials processing in the vacuum of space","authors":"A. Ignatiev, C. Horton, M. Sterling, R. Sega, A. Bensaoula, A. Freundlich, S. Pei","doi":"10.1109/GAAS.1994.636907","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636907","url":null,"abstract":"GaAs films, both silicon doped and undoped, have been deposited by Molecular Beam Epitaxy (MBE) in Low Earth Orbit (LEO) in an ultra vacuum environment created by the Wake Shield Facility (WSF). The WSF is a 12 foot diameter stainless steel disk that sweeps out a volume of space thus creating an ultra vacuum in its wake. It was developed specifically to take advantage of the ultra vacuum for the deposition of thin film materials. The WSF was flown for the first time on STS-60 in February, 1994. The mission objectives were to measure the unique wake vacuum environment formed by the Wake Shield, and to epitaxially deposit GaAs thin films. In this paper we describe the films deposited and report on the characterization performed to date. Films were deposited in two basic structures. The first structure consisted of undoped GaAs films of thicknesses ranging from 2 to 4 /spl mu/m with a thin (/spl ap/200 mn) highly silicon doped layer (n/spl ap/5/spl times/10/sup 17//cc) on top. This is basically a metal-semiconductor field effect transistor (MESFET) structure. The second structure was a lightly silicon doped GaAs film (n/spl ap/5/spl times/10/sup 15//cc). We have obtained Photoluminescence (PL), Secondary Ion Mass Spectrometry (SIMS) and X-Ray diffraction data on selected films. The data indicate nominal quality single crystal films with oxygen and carbon contamination. The source of the contamination and further characterization are discussed.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117013153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-10-16DOI: 10.1109/GAAS.1994.636932
T. Saito, N. Hidaka, Y. Ohashi, Y. Aoki
Using InGaP-InGaAs-GaAs technology, we designed, fabricated, and evaluated a 60-GHz fully integrated HEMT-based MMIC receiver. The receiver consists of a four-stage low-noise amplifier (LNA) and a single-balanced active-gate mixer, a 60 GHz local oscillator (LO), and a buffer amplifier for the LO. The HEMTs in the receiver have gates 0.1 /spl mu/m long and 100 /spl mu/m wide. The receiver had a conversion gain of greater than 17 dB from 60.2 GHz to 62.3 GHz, and the maximum conversion gain was 20 dB at 62.2 GHz. The noise figure of the receiver was less than 6 db for IF frequencies between 100 MHz and 1 GHz for a 61.536 GHz LO, and the minimum noise figure was 49 dB at 1 GHz IF.
{"title":"60-GHz HEMT-based MMIC receiver with on-chip LO","authors":"T. Saito, N. Hidaka, Y. Ohashi, Y. Aoki","doi":"10.1109/GAAS.1994.636932","DOIUrl":"https://doi.org/10.1109/GAAS.1994.636932","url":null,"abstract":"Using InGaP-InGaAs-GaAs technology, we designed, fabricated, and evaluated a 60-GHz fully integrated HEMT-based MMIC receiver. The receiver consists of a four-stage low-noise amplifier (LNA) and a single-balanced active-gate mixer, a 60 GHz local oscillator (LO), and a buffer amplifier for the LO. The HEMTs in the receiver have gates 0.1 /spl mu/m long and 100 /spl mu/m wide. The receiver had a conversion gain of greater than 17 dB from 60.2 GHz to 62.3 GHz, and the maximum conversion gain was 20 dB at 62.2 GHz. The noise figure of the receiver was less than 6 db for IF frequencies between 100 MHz and 1 GHz for a 61.536 GHz LO, and the minimum noise figure was 49 dB at 1 GHz IF.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115514771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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