Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051127
C. Chin, Cheng-Syun Li, Ming-Huang Li, Sheng-Shian Li
In this work, a CMOS-MEMS arrayed resonant gate field effect transistor (RGFET) oscillator is demonstrated for the first time. With the mechanically coupled array approach and deep submicron gap spacing, the proposed resonator with Q of 1,800 under purely capacitive transduction achieves the record-low motional impedance Rm of 1.1 kΩ among all CMOS-MEMS resonators. By using the FET readout, a CMOS-MEMS arrayed RGFET oscillator is realized through a closed-loop configuration, demonstrating phase noise performance of -96 dBc/Hz at 1 kHz offset and -122 dBc/Hz at far-from-carrier offset, respectively. In particular, a novel band-to-band tunneling bias scheme is employed for the proposed CMOS-MEMS RGFET without the need of manual switch charging or complicated biasing circuits. The proposed device is fabricated by a standard 0.35 μm CMOS process together with a maskless release process.
{"title":"A CMOS-MEMS arrayed RGFET oscillator using a band-to-band tunneling bias scheme","authors":"C. Chin, Cheng-Syun Li, Ming-Huang Li, Sheng-Shian Li","doi":"10.1109/MEMSYS.2015.7051127","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051127","url":null,"abstract":"In this work, a CMOS-MEMS arrayed resonant gate field effect transistor (RGFET) oscillator is demonstrated for the first time. With the mechanically coupled array approach and deep submicron gap spacing, the proposed resonator with Q of 1,800 under purely capacitive transduction achieves the record-low motional impedance Rm of 1.1 kΩ among all CMOS-MEMS resonators. By using the FET readout, a CMOS-MEMS arrayed RGFET oscillator is realized through a closed-loop configuration, demonstrating phase noise performance of -96 dBc/Hz at 1 kHz offset and -122 dBc/Hz at far-from-carrier offset, respectively. In particular, a novel band-to-band tunneling bias scheme is employed for the proposed CMOS-MEMS RGFET without the need of manual switch charging or complicated biasing circuits. The proposed device is fabricated by a standard 0.35 μm CMOS process together with a maskless release process.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121082503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051162
B. Truong, C. Le, E. Halvorsen
This paper presents experimentally verified progress on modeling of MEMS electrostatic energy harvesters with internal impacts on transducing end-stops. The two-mechanical-degrees-of-freedom device dynamics are described by a set of ordinary differential equations which can be represented by an equivalent circuit and solved numerically in the time domain using a circuit simulator. The model accounts for the electromechanical nonlinearities, nonlinear damping upon impact at strong accelerations and the nonlinear squeezed-film damping force of the in-plane gap-closing transducer functioning as end-stop. The comparison between simulation and experimental results shows that these effects are crucial and gives good agreement for phenomenological damping parameters. This is a significant step towards accurate modeling of this complex system and is an important prerequisite to improve performance under displacement-limited operation.
{"title":"Experimentally verified model of electrostatic energy harvester with internal impacts","authors":"B. Truong, C. Le, E. Halvorsen","doi":"10.1109/MEMSYS.2015.7051162","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051162","url":null,"abstract":"This paper presents experimentally verified progress on modeling of MEMS electrostatic energy harvesters with internal impacts on transducing end-stops. The two-mechanical-degrees-of-freedom device dynamics are described by a set of ordinary differential equations which can be represented by an equivalent circuit and solved numerically in the time domain using a circuit simulator. The model accounts for the electromechanical nonlinearities, nonlinear damping upon impact at strong accelerations and the nonlinear squeezed-film damping force of the in-plane gap-closing transducer functioning as end-stop. The comparison between simulation and experimental results shows that these effects are crucial and gives good agreement for phenomenological damping parameters. This is a significant step towards accurate modeling of this complex system and is an important prerequisite to improve performance under displacement-limited operation.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122653377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051116
Hung D. Nguyen, Joshua A. Erbland, L. Sorenson, R. Perahia, Lian X. Huang, R. Joyce, Y. Yoon, D. Kirby, Tracy J. Boden, Robert B. McElwain, D. Chang
This paper reports the design, fabrication, and characterization of piezoelectric quartz MEMS magnetometers based on acoustic coupling between resonance modes. The magnetic sensors described herein employ a novel transduction scheme to upconvert the desired near-DC magnetic field signal (using the fundamental flexural mode) onto frequency modulated (FM) sidebands of the primary quartz thickness shear (TS) oscillation at frequencies above 500 MHz. First-generation devices exhibit flexural and TS resonances at 2.77 kHz and at 583.31 MHz, respectively, and magnetic sensitivity of 63.6 V/T was measured with an AC loop current of 9.2 mA. This novel sensing method, intended for electronic compassing, illuminates the interactions between low and high frequency acoustic modes within resonant devices.
{"title":"UHF piezoelectric quartz mems magnetometers based on acoustic coupling of flexural and thickness shear modes","authors":"Hung D. Nguyen, Joshua A. Erbland, L. Sorenson, R. Perahia, Lian X. Huang, R. Joyce, Y. Yoon, D. Kirby, Tracy J. Boden, Robert B. McElwain, D. Chang","doi":"10.1109/MEMSYS.2015.7051116","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051116","url":null,"abstract":"This paper reports the design, fabrication, and characterization of piezoelectric quartz MEMS magnetometers based on acoustic coupling between resonance modes. The magnetic sensors described herein employ a novel transduction scheme to upconvert the desired near-DC magnetic field signal (using the fundamental flexural mode) onto frequency modulated (FM) sidebands of the primary quartz thickness shear (TS) oscillation at frequencies above 500 MHz. First-generation devices exhibit flexural and TS resonances at 2.77 kHz and at 583.31 MHz, respectively, and magnetic sensitivity of 63.6 V/T was measured with an AC loop current of 9.2 mA. This novel sensing method, intended for electronic compassing, illuminates the interactions between low and high frequency acoustic modes within resonant devices.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129696763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051050
Hiroki Makino, Kohei Asai, Masahiro Tanaka, S. Yamagiwa, H. Sawahata, I. Akita, M. Ishida, T. Kawano
We report a heterogeneous integration of vertically aligned extracellular micro-scale silicon (Si)-probe arrays/(111) with MOSFET amplifiers/(100), by IC processes and subsequent vapor-liquid-solid (VLS) growth of Si-probes. To improve the extracellular recording capability of the microprobe with a high impedance of > 1 MΩ at 1 kHz, here we integrated (100)-Si source follower buffer amplifiers by ~700°C VLS growth compatible (100)-Si MOSFET technology. Without on-chip source follower, output/input signal ratio of the microprobe in saline was 0.59, which was improved to 0.72 by the on-chip source follower configuration, while the signal-to-noise ratio (SNR) was improved to 12.5 dB in the frequency of extracellular recording. These results indicate that the integration of the source follower buffer amplifiers becomes a powerful way to enhance the performance of high impedance microprobe electrodes in neural recordings.
{"title":"Vertically aligned extracellular microprobe arrays/(111) integrated with (100)-silicon mosfet amplifiers","authors":"Hiroki Makino, Kohei Asai, Masahiro Tanaka, S. Yamagiwa, H. Sawahata, I. Akita, M. Ishida, T. Kawano","doi":"10.1109/MEMSYS.2015.7051050","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051050","url":null,"abstract":"We report a heterogeneous integration of vertically aligned extracellular micro-scale silicon (Si)-probe arrays/(111) with MOSFET amplifiers/(100), by IC processes and subsequent vapor-liquid-solid (VLS) growth of Si-probes. To improve the extracellular recording capability of the microprobe with a high impedance of > 1 MΩ at 1 kHz, here we integrated (100)-Si source follower buffer amplifiers by ~700°C VLS growth compatible (100)-Si MOSFET technology. Without on-chip source follower, output/input signal ratio of the microprobe in saline was 0.59, which was improved to 0.72 by the on-chip source follower configuration, while the signal-to-noise ratio (SNR) was improved to 12.5 dB in the frequency of extracellular recording. These results indicate that the integration of the source follower buffer amplifiers becomes a powerful way to enhance the performance of high impedance microprobe electrodes in neural recordings.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129463650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7050896
B. Meng, Xuan Cheng, M. Han, H. Chen, F. Zhu, H. X. Zhang
We present a novel sensor for polymer distinguishing among a group of known polymers based on the effects of triboelectrification and electrostatic induction. Multiple polymer-electrode cells are integrated on a flexible substrate, each cell produces an independent signal. The manufacture procedure of flexible printed circuit is employed to implement a low-cost and efficient fabrication of the device. According to the triboelectric serials, for different polymer groups, the friction layers can be well-selected. As an example, the distinguishing of polydimethylsiloxane, polyethylene and polyethylene terephthalate has been well demonstrated by employing polyimide and polystyrene as friction layers, showing potential applications in robotics and industrial fields.
{"title":"Triboelectrification based active sensor for polymer distinguishing","authors":"B. Meng, Xuan Cheng, M. Han, H. Chen, F. Zhu, H. X. Zhang","doi":"10.1109/MEMSYS.2015.7050896","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7050896","url":null,"abstract":"We present a novel sensor for polymer distinguishing among a group of known polymers based on the effects of triboelectrification and electrostatic induction. Multiple polymer-electrode cells are integrated on a flexible substrate, each cell produces an independent signal. The manufacture procedure of flexible printed circuit is employed to implement a low-cost and efficient fabrication of the device. According to the triboelectric serials, for different polymer groups, the friction layers can be well-selected. As an example, the distinguishing of polydimethylsiloxane, polyethylene and polyethylene terephthalate has been well demonstrated by employing polyimide and polystyrene as friction layers, showing potential applications in robotics and industrial fields.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121932521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051101
M. Maldonado-Garcia, E. Mehdizadeh, Varun Kumar, J. C. Wilson, S. Pourkamali
This work presents chip-scale integration of MEMS resonant mass balances along with aerosol inertial impactors (airborne micro/nanoparticle collectors). A three mask microfabrication process has been developed to produce the main components; mass balance, impactor nozzle, and impaction micro-chamber on a single SOI substrate. In addition to extreme miniaturization of a conventionally bulky setup and allowing real-time particulate mass concentration data collection, this approach addresses assembly challenges for discrete versions of such systems, e.g. misalignment between MEMS resonators and nozzles. Furthermore, small nozzle diameters achievable through microfabrication, minimizes the air flow and therefore pump capacity requirements.
{"title":"Chip-scale aerosol impactor with integrated resonant mass balances for real time monitoring of airborne particulate concentrations","authors":"M. Maldonado-Garcia, E. Mehdizadeh, Varun Kumar, J. C. Wilson, S. Pourkamali","doi":"10.1109/MEMSYS.2015.7051101","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051101","url":null,"abstract":"This work presents chip-scale integration of MEMS resonant mass balances along with aerosol inertial impactors (airborne micro/nanoparticle collectors). A three mask microfabrication process has been developed to produce the main components; mass balance, impactor nozzle, and impaction micro-chamber on a single SOI substrate. In addition to extreme miniaturization of a conventionally bulky setup and allowing real-time particulate mass concentration data collection, this approach addresses assembly challenges for discrete versions of such systems, e.g. misalignment between MEMS resonators and nozzles. Furthermore, small nozzle diameters achievable through microfabrication, minimizes the air flow and therefore pump capacity requirements.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"352 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115977843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7050950
Hokuto Yamane, S. Nagasawa
In this paper we propose a trajectory control method for a MEMS falling object as shown in Figure 1. The MEMS falling object is consisted of two units, an autorotation part and a non-rotation part. The autorotation part keeps its attitude stable with the gyro-effect of the autorotation phenomenon. The non-rotation part keeps a non-rotation state by using the air breaking boards. This non-rotation part controls its falling trajectory and the scattering region. By using large falling objects, aerodynamics of the falling object was characterized, e.g. falling speed, rotational speed, etc. Then the MEMS falling object was designed considering with this aerodynamics. The MEMS falling object was fabricated with a method of the SU-8 multi-layer structure. A MEMS autorotation part whose wing length is 6mm in diameter rotates at 4,800 rpm in the wind-tunnel successfully.
{"title":"Trajectory control of MEMS falling object fabricated by SU-8 multilayer structure","authors":"Hokuto Yamane, S. Nagasawa","doi":"10.1109/MEMSYS.2015.7050950","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7050950","url":null,"abstract":"In this paper we propose a trajectory control method for a MEMS falling object as shown in Figure 1. The MEMS falling object is consisted of two units, an autorotation part and a non-rotation part. The autorotation part keeps its attitude stable with the gyro-effect of the autorotation phenomenon. The non-rotation part keeps a non-rotation state by using the air breaking boards. This non-rotation part controls its falling trajectory and the scattering region. By using large falling objects, aerodynamics of the falling object was characterized, e.g. falling speed, rotational speed, etc. Then the MEMS falling object was designed considering with this aerodynamics. The MEMS falling object was fabricated with a method of the SU-8 multi-layer structure. A MEMS autorotation part whose wing length is 6mm in diameter rotates at 4,800 rpm in the wind-tunnel successfully.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"46 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120853990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051128
Lisha Shi, G. Piazza
This paper reports on the design and demonstration of active reflectors for enhancing the electromechanical coupling (kt2) and suppressing spurious modes in Laterally Vibrating Resonators (LVRs) based on X-cut ion-sliced Lithium Niobate (LN) thin film on silicon dioxide (SiO2). By adding electroded quarter wavelength (λ/4) regions at the two ends of the resonant plate, active reflectors (since an electrical signal is applied to them) are formed to improve the device performance. Optimized active reflectors that resort to 100% metal coverage of the λ/4 extensions enable: (i) a considerable improvement of kt2, (ii) spurious mode suppression, and robustness to processing (iii) misalignment and (iv) over/under-etching. 2X improvement in kt2 and significant suppression of in-band spurious vibrations were attained with respect to the conventional design (without active reflectors) despite 0.5 μm misalignment and more than 0.5 μm overetch in the fabrication process.
{"title":"Active reflectors for high performance lithium niobate on silicon dioxide resonators","authors":"Lisha Shi, G. Piazza","doi":"10.1109/MEMSYS.2015.7051128","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051128","url":null,"abstract":"This paper reports on the design and demonstration of active reflectors for enhancing the electromechanical coupling (kt2) and suppressing spurious modes in Laterally Vibrating Resonators (LVRs) based on X-cut ion-sliced Lithium Niobate (LN) thin film on silicon dioxide (SiO2). By adding electroded quarter wavelength (λ/4) regions at the two ends of the resonant plate, active reflectors (since an electrical signal is applied to them) are formed to improve the device performance. Optimized active reflectors that resort to 100% metal coverage of the λ/4 extensions enable: (i) a considerable improvement of kt2, (ii) spurious mode suppression, and robustness to processing (iii) misalignment and (iv) over/under-etching. 2X improvement in kt2 and significant suppression of in-band spurious vibrations were attained with respect to the conventional design (without active reflectors) despite 0.5 μm misalignment and more than 0.5 μm overetch in the fabrication process.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127560289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051138
Prakash Pitchappa, C. Ho, Y. Qian, Yu‐Sheng Lin, Navab Singh, Chengkuo Lee
In this report, we demonstrate a method to enhance the controllability of MEMS tunable metamaterial by isolating the electrical routing of alternate lines in the metamaterial unit cell array. The metamaterial consists of alternate lines of split ring resonators with two released heights. This allows for two independent tuning characteristics for a single MEMS metamaterial by selecting between the two external control ports. This technology can be further improved to provide line or pixel wise control, and can even be programmed to have one of many functionalities such as tunable filter, multicolor spatial modulator, gradient metamaterial or random metamaterial.
{"title":"Enhanced controllability in MEMS metamaterial","authors":"Prakash Pitchappa, C. Ho, Y. Qian, Yu‐Sheng Lin, Navab Singh, Chengkuo Lee","doi":"10.1109/MEMSYS.2015.7051138","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051138","url":null,"abstract":"In this report, we demonstrate a method to enhance the controllability of MEMS tunable metamaterial by isolating the electrical routing of alternate lines in the metamaterial unit cell array. The metamaterial consists of alternate lines of split ring resonators with two released heights. This allows for two independent tuning characteristics for a single MEMS metamaterial by selecting between the two external control ports. This technology can be further improved to provide line or pixel wise control, and can even be programmed to have one of many functionalities such as tunable filter, multicolor spatial modulator, gradient metamaterial or random metamaterial.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127496073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051090
M. Shibata, Takahiro Yamaguchi, S. Kumagai, M. Sasaki
In a microfluidic channel, thermocouples were fabricated on the sidewall of microchannel using the three-dimensional photolithography. The thermocouples on the side wall can directly sense the microfluid in the channel, and the accurate temperature measurement can be achieved. Moreover, the thermocouple metals on the sidewall do not make the shadow allowing the observation using the optical microscopy.
{"title":"Thermocouples on trench sidewall in channel fronting on flowing material","authors":"M. Shibata, Takahiro Yamaguchi, S. Kumagai, M. Sasaki","doi":"10.1109/MEMSYS.2015.7051090","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051090","url":null,"abstract":"In a microfluidic channel, thermocouples were fabricated on the sidewall of microchannel using the three-dimensional photolithography. The thermocouples on the side wall can directly sense the microfluid in the channel, and the accurate temperature measurement can be achieved. Moreover, the thermocouple metals on the sidewall do not make the shadow allowing the observation using the optical microscopy.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121570937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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