Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051128
Lisha Shi, G. Piazza
This paper reports on the design and demonstration of active reflectors for enhancing the electromechanical coupling (kt2) and suppressing spurious modes in Laterally Vibrating Resonators (LVRs) based on X-cut ion-sliced Lithium Niobate (LN) thin film on silicon dioxide (SiO2). By adding electroded quarter wavelength (λ/4) regions at the two ends of the resonant plate, active reflectors (since an electrical signal is applied to them) are formed to improve the device performance. Optimized active reflectors that resort to 100% metal coverage of the λ/4 extensions enable: (i) a considerable improvement of kt2, (ii) spurious mode suppression, and robustness to processing (iii) misalignment and (iv) over/under-etching. 2X improvement in kt2 and significant suppression of in-band spurious vibrations were attained with respect to the conventional design (without active reflectors) despite 0.5 μm misalignment and more than 0.5 μm overetch in the fabrication process.
{"title":"Active reflectors for high performance lithium niobate on silicon dioxide resonators","authors":"Lisha Shi, G. Piazza","doi":"10.1109/MEMSYS.2015.7051128","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051128","url":null,"abstract":"This paper reports on the design and demonstration of active reflectors for enhancing the electromechanical coupling (kt2) and suppressing spurious modes in Laterally Vibrating Resonators (LVRs) based on X-cut ion-sliced Lithium Niobate (LN) thin film on silicon dioxide (SiO2). By adding electroded quarter wavelength (λ/4) regions at the two ends of the resonant plate, active reflectors (since an electrical signal is applied to them) are formed to improve the device performance. Optimized active reflectors that resort to 100% metal coverage of the λ/4 extensions enable: (i) a considerable improvement of kt2, (ii) spurious mode suppression, and robustness to processing (iii) misalignment and (iv) over/under-etching. 2X improvement in kt2 and significant suppression of in-band spurious vibrations were attained with respect to the conventional design (without active reflectors) despite 0.5 μm misalignment and more than 0.5 μm overetch in the fabrication process.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127560289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051162
B. Truong, C. Le, E. Halvorsen
This paper presents experimentally verified progress on modeling of MEMS electrostatic energy harvesters with internal impacts on transducing end-stops. The two-mechanical-degrees-of-freedom device dynamics are described by a set of ordinary differential equations which can be represented by an equivalent circuit and solved numerically in the time domain using a circuit simulator. The model accounts for the electromechanical nonlinearities, nonlinear damping upon impact at strong accelerations and the nonlinear squeezed-film damping force of the in-plane gap-closing transducer functioning as end-stop. The comparison between simulation and experimental results shows that these effects are crucial and gives good agreement for phenomenological damping parameters. This is a significant step towards accurate modeling of this complex system and is an important prerequisite to improve performance under displacement-limited operation.
{"title":"Experimentally verified model of electrostatic energy harvester with internal impacts","authors":"B. Truong, C. Le, E. Halvorsen","doi":"10.1109/MEMSYS.2015.7051162","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051162","url":null,"abstract":"This paper presents experimentally verified progress on modeling of MEMS electrostatic energy harvesters with internal impacts on transducing end-stops. The two-mechanical-degrees-of-freedom device dynamics are described by a set of ordinary differential equations which can be represented by an equivalent circuit and solved numerically in the time domain using a circuit simulator. The model accounts for the electromechanical nonlinearities, nonlinear damping upon impact at strong accelerations and the nonlinear squeezed-film damping force of the in-plane gap-closing transducer functioning as end-stop. The comparison between simulation and experimental results shows that these effects are crucial and gives good agreement for phenomenological damping parameters. This is a significant step towards accurate modeling of this complex system and is an important prerequisite to improve performance under displacement-limited operation.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122653377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051108
M. Mahdavi, A. Ramezany, Varun Kumar, S. Pourkamali
Effect of thermal-piezoresistive internal amplification on signal to noise ratio (SNR) of amplitude modulated resonant MEMS sensors (e.g. vibratory gyroscopes and Lorentz force magnetometers) has been studied in this work showing the possibility to significantly improve the detection limit. It has been shown that as the thermal-piezoresistive amplification sets in, noise rms value increases with a slower rate than the boost in vibration amplitude and output signal level, therefore the SNR increases. In addition to higher sensitivity due to internal amplification in such devices, improvement in SNR reduces the minimum detectable signal in presence of limiting Brownian and thermal noises. Preliminary measurement results show that increasing the DC bias current, which leads to a 3X increase in vibration amplitude, improves the SNR by a factor of 4.5 (6.6 dB).
{"title":"SNR improvement in amplitude modulated resonant MEMS sensors via thermal-piezoresistive internal amplification","authors":"M. Mahdavi, A. Ramezany, Varun Kumar, S. Pourkamali","doi":"10.1109/MEMSYS.2015.7051108","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051108","url":null,"abstract":"Effect of thermal-piezoresistive internal amplification on signal to noise ratio (SNR) of amplitude modulated resonant MEMS sensors (e.g. vibratory gyroscopes and Lorentz force magnetometers) has been studied in this work showing the possibility to significantly improve the detection limit. It has been shown that as the thermal-piezoresistive amplification sets in, noise rms value increases with a slower rate than the boost in vibration amplitude and output signal level, therefore the SNR increases. In addition to higher sensitivity due to internal amplification in such devices, improvement in SNR reduces the minimum detectable signal in presence of limiting Brownian and thermal noises. Preliminary measurement results show that increasing the DC bias current, which leads to a 3X increase in vibration amplitude, improves the SNR by a factor of 4.5 (6.6 dB).","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121429023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7050896
B. Meng, Xuan Cheng, M. Han, H. Chen, F. Zhu, H. X. Zhang
We present a novel sensor for polymer distinguishing among a group of known polymers based on the effects of triboelectrification and electrostatic induction. Multiple polymer-electrode cells are integrated on a flexible substrate, each cell produces an independent signal. The manufacture procedure of flexible printed circuit is employed to implement a low-cost and efficient fabrication of the device. According to the triboelectric serials, for different polymer groups, the friction layers can be well-selected. As an example, the distinguishing of polydimethylsiloxane, polyethylene and polyethylene terephthalate has been well demonstrated by employing polyimide and polystyrene as friction layers, showing potential applications in robotics and industrial fields.
{"title":"Triboelectrification based active sensor for polymer distinguishing","authors":"B. Meng, Xuan Cheng, M. Han, H. Chen, F. Zhu, H. X. Zhang","doi":"10.1109/MEMSYS.2015.7050896","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7050896","url":null,"abstract":"We present a novel sensor for polymer distinguishing among a group of known polymers based on the effects of triboelectrification and electrostatic induction. Multiple polymer-electrode cells are integrated on a flexible substrate, each cell produces an independent signal. The manufacture procedure of flexible printed circuit is employed to implement a low-cost and efficient fabrication of the device. According to the triboelectric serials, for different polymer groups, the friction layers can be well-selected. As an example, the distinguishing of polydimethylsiloxane, polyethylene and polyethylene terephthalate has been well demonstrated by employing polyimide and polystyrene as friction layers, showing potential applications in robotics and industrial fields.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121932521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051127
C. Chin, Cheng-Syun Li, Ming-Huang Li, Sheng-Shian Li
In this work, a CMOS-MEMS arrayed resonant gate field effect transistor (RGFET) oscillator is demonstrated for the first time. With the mechanically coupled array approach and deep submicron gap spacing, the proposed resonator with Q of 1,800 under purely capacitive transduction achieves the record-low motional impedance Rm of 1.1 kΩ among all CMOS-MEMS resonators. By using the FET readout, a CMOS-MEMS arrayed RGFET oscillator is realized through a closed-loop configuration, demonstrating phase noise performance of -96 dBc/Hz at 1 kHz offset and -122 dBc/Hz at far-from-carrier offset, respectively. In particular, a novel band-to-band tunneling bias scheme is employed for the proposed CMOS-MEMS RGFET without the need of manual switch charging or complicated biasing circuits. The proposed device is fabricated by a standard 0.35 μm CMOS process together with a maskless release process.
{"title":"A CMOS-MEMS arrayed RGFET oscillator using a band-to-band tunneling bias scheme","authors":"C. Chin, Cheng-Syun Li, Ming-Huang Li, Sheng-Shian Li","doi":"10.1109/MEMSYS.2015.7051127","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051127","url":null,"abstract":"In this work, a CMOS-MEMS arrayed resonant gate field effect transistor (RGFET) oscillator is demonstrated for the first time. With the mechanically coupled array approach and deep submicron gap spacing, the proposed resonator with Q of 1,800 under purely capacitive transduction achieves the record-low motional impedance Rm of 1.1 kΩ among all CMOS-MEMS resonators. By using the FET readout, a CMOS-MEMS arrayed RGFET oscillator is realized through a closed-loop configuration, demonstrating phase noise performance of -96 dBc/Hz at 1 kHz offset and -122 dBc/Hz at far-from-carrier offset, respectively. In particular, a novel band-to-band tunneling bias scheme is employed for the proposed CMOS-MEMS RGFET without the need of manual switch charging or complicated biasing circuits. The proposed device is fabricated by a standard 0.35 μm CMOS process together with a maskless release process.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121082503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051050
Hiroki Makino, Kohei Asai, Masahiro Tanaka, S. Yamagiwa, H. Sawahata, I. Akita, M. Ishida, T. Kawano
We report a heterogeneous integration of vertically aligned extracellular micro-scale silicon (Si)-probe arrays/(111) with MOSFET amplifiers/(100), by IC processes and subsequent vapor-liquid-solid (VLS) growth of Si-probes. To improve the extracellular recording capability of the microprobe with a high impedance of > 1 MΩ at 1 kHz, here we integrated (100)-Si source follower buffer amplifiers by ~700°C VLS growth compatible (100)-Si MOSFET technology. Without on-chip source follower, output/input signal ratio of the microprobe in saline was 0.59, which was improved to 0.72 by the on-chip source follower configuration, while the signal-to-noise ratio (SNR) was improved to 12.5 dB in the frequency of extracellular recording. These results indicate that the integration of the source follower buffer amplifiers becomes a powerful way to enhance the performance of high impedance microprobe electrodes in neural recordings.
{"title":"Vertically aligned extracellular microprobe arrays/(111) integrated with (100)-silicon mosfet amplifiers","authors":"Hiroki Makino, Kohei Asai, Masahiro Tanaka, S. Yamagiwa, H. Sawahata, I. Akita, M. Ishida, T. Kawano","doi":"10.1109/MEMSYS.2015.7051050","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051050","url":null,"abstract":"We report a heterogeneous integration of vertically aligned extracellular micro-scale silicon (Si)-probe arrays/(111) with MOSFET amplifiers/(100), by IC processes and subsequent vapor-liquid-solid (VLS) growth of Si-probes. To improve the extracellular recording capability of the microprobe with a high impedance of > 1 MΩ at 1 kHz, here we integrated (100)-Si source follower buffer amplifiers by ~700°C VLS growth compatible (100)-Si MOSFET technology. Without on-chip source follower, output/input signal ratio of the microprobe in saline was 0.59, which was improved to 0.72 by the on-chip source follower configuration, while the signal-to-noise ratio (SNR) was improved to 12.5 dB in the frequency of extracellular recording. These results indicate that the integration of the source follower buffer amplifiers becomes a powerful way to enhance the performance of high impedance microprobe electrodes in neural recordings.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129463650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051136
T. Naing, T. Rocheleau, C. Nguyen
An electromechanical circuit constructed from array-composites of capacitive-gap micromechanical resonators with differing frequencies, wired in closed-loop feedback with a single ASIC amplifier, provides a first MEMS-based multi-frequency oscillator generating simultaneous oscillation outputs in the vicinity of 61 MHz. The use of only one amplifier for all frequencies (as opposed to one for each frequency) saves substantial power and is made possible by exploiting softening and damping non-linearities in the MEMS resonators, often considered a limitation, but here providing amplitude limiting that prevents amplifier desensitization to other frequencies. Furthermore, electrical stiffness-based frequency tuning enables Frequency-Shift Keyed (FSK) modulation of the output waveform, offering a space and power-efficient multichannel transmitter, as desired for mobile applications requiring long battery life, such as wireless sensor nodes. Indeed, while capable of multiple simultaneous and independent frequency outputs, this oscillator consumes only 137 μW, which is one-third that of previous multi-frequency efforts that only produce one frequency at a time [1].
{"title":"Simultaneous multi-frequency switchable oscillator and FSK modulator based on a capacitive-gap MEMS disk array","authors":"T. Naing, T. Rocheleau, C. Nguyen","doi":"10.1109/MEMSYS.2015.7051136","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051136","url":null,"abstract":"An electromechanical circuit constructed from array-composites of capacitive-gap micromechanical resonators with differing frequencies, wired in closed-loop feedback with a single ASIC amplifier, provides a first MEMS-based multi-frequency oscillator generating simultaneous oscillation outputs in the vicinity of 61 MHz. The use of only one amplifier for all frequencies (as opposed to one for each frequency) saves substantial power and is made possible by exploiting softening and damping non-linearities in the MEMS resonators, often considered a limitation, but here providing amplitude limiting that prevents amplifier desensitization to other frequencies. Furthermore, electrical stiffness-based frequency tuning enables Frequency-Shift Keyed (FSK) modulation of the output waveform, offering a space and power-efficient multichannel transmitter, as desired for mobile applications requiring long battery life, such as wireless sensor nodes. Indeed, while capable of multiple simultaneous and independent frequency outputs, this oscillator consumes only 137 μW, which is one-third that of previous multi-frequency efforts that only produce one frequency at a time [1].","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"217 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123018190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7050993
D. Serien, S. Takeuchi
We report the multiphoton fabrication of hybrid microstructures of photoresist and chemically responsive protein hydrogel for microactuation, such as a lever and a rotary stepper. By two-step direct laser writing (DLW) technology, we combine chemically responsive protein hydrogel with mechanical robust photoresist into pH-responsive hybrid actuators that contain only biocompatible materials. The fabrication can be performed separately, without adding to the complexity of device fabrication. We observe micrometer-range motion of the photoresist components. These microactuators may also serve as a pH- or salt-concentration-sensor that measure and interact with their environment by their motion as immediate feedback.
{"title":"Chemically responsive protein-photoresist hybrid actuator","authors":"D. Serien, S. Takeuchi","doi":"10.1109/MEMSYS.2015.7050993","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7050993","url":null,"abstract":"We report the multiphoton fabrication of hybrid microstructures of photoresist and chemically responsive protein hydrogel for microactuation, such as a lever and a rotary stepper. By two-step direct laser writing (DLW) technology, we combine chemically responsive protein hydrogel with mechanical robust photoresist into pH-responsive hybrid actuators that contain only biocompatible materials. The fabrication can be performed separately, without adding to the complexity of device fabrication. We observe micrometer-range motion of the photoresist components. These microactuators may also serve as a pH- or salt-concentration-sensor that measure and interact with their environment by their motion as immediate feedback.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"220 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128624809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7050966
K. Yamauchi, T. Kuno, K. Sugano, Y. Isono
This research clarified the anomalous electric resistance change of ultrastrained multi-walled carbon nanotube (MWCNT), as well as its mechanical properties, using the Electrostatically Actuated NAnotensile Testing device (EANAT) mounted on the in-situ SEM nanomanipulation system. The Young's modulus of MWCNT and its shear stress during interlayer sliding deformation were estimated from the load-displacement curve. The electrical resistance of the MWCNT was 215 kΩ without strain, which was similar to the previously reported value, however the anomalous resistance change was observed under enormous strain. Although the resistance change ratio was almost constant during interlayer sliding of the MWCNT, it specifically showed a sharp raise at the end of the sliding in spite of the MWCNT not breaking mechanically. The molecular dynamics (MD) simulation provided a good understanding that the atomic reconfiguration due to the hard sticking at the edge of extracted outer layer of MWCNT might induce the sharp raise of resistance without its mechanically breaking. This result reported here is extremely important for reliability of MWCNT interconnects.
{"title":"Anomalous resistance change of ultrastrained individual MWCNT using MEMS-based strain engineering","authors":"K. Yamauchi, T. Kuno, K. Sugano, Y. Isono","doi":"10.1109/MEMSYS.2015.7050966","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7050966","url":null,"abstract":"This research clarified the anomalous electric resistance change of ultrastrained multi-walled carbon nanotube (MWCNT), as well as its mechanical properties, using the Electrostatically Actuated NAnotensile Testing device (EANAT) mounted on the in-situ SEM nanomanipulation system. The Young's modulus of MWCNT and its shear stress during interlayer sliding deformation were estimated from the load-displacement curve. The electrical resistance of the MWCNT was 215 kΩ without strain, which was similar to the previously reported value, however the anomalous resistance change was observed under enormous strain. Although the resistance change ratio was almost constant during interlayer sliding of the MWCNT, it specifically showed a sharp raise at the end of the sliding in spite of the MWCNT not breaking mechanically. The molecular dynamics (MD) simulation provided a good understanding that the atomic reconfiguration due to the hard sticking at the edge of extracted outer layer of MWCNT might induce the sharp raise of resistance without its mechanically breaking. This result reported here is extremely important for reliability of MWCNT interconnects.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129047620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-03-02DOI: 10.1109/MEMSYS.2015.7051029
K. Sugano, D. Matsui, T. Tsuchiya, O. Tabata
This paper reports an ultrasensitive nanostructure for surface-enhanced Raman spectroscopy (SERS). The gold nanoparticle dimer, which has been reported as the highest Raman enhancing structure, was directionally arrayed on a substrate for the first time. The highest enhancement can be achieved when a particle connection direction of a dimer is matched to polarization direction of incident light. Therefore the huge enhancement can be achieved at all dimers in total. Optimizing the dimer arrangement, 10 pM limit of detection and 0.5 s rapid detection were achieved.
{"title":"Ultrasensitive surface-enhanced Raman spectroscopy using directionally arrayed gold nanoparticle dimers","authors":"K. Sugano, D. Matsui, T. Tsuchiya, O. Tabata","doi":"10.1109/MEMSYS.2015.7051029","DOIUrl":"https://doi.org/10.1109/MEMSYS.2015.7051029","url":null,"abstract":"This paper reports an ultrasensitive nanostructure for surface-enhanced Raman spectroscopy (SERS). The gold nanoparticle dimer, which has been reported as the highest Raman enhancing structure, was directionally arrayed on a substrate for the first time. The highest enhancement can be achieved when a particle connection direction of a dimer is matched to polarization direction of incident light. Therefore the huge enhancement can be achieved at all dimers in total. Optimizing the dimer arrangement, 10 pM limit of detection and 0.5 s rapid detection were achieved.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116797173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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