Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306784
Guang-Wei Wang, G. Ru, X. Qu, Bingzong Li
The Schottky junction Co/p-poly-SiGe was formed by deposition of Co on p-poly-SiGe thin film through ion beam sputtering (IBS) technique. Inhomogeneity of the Co/p-poly-SiGe contact was studied by I-V-T method in a wide temperature range. The parameters of the Schottky structure can be extracted from the thermionic emission model precisely. Our results show that both the Schottky barrier height and ideality factor are strongly temperature dependent and weakly bias dependent. It is ascribed to the spatial inhomogeneity of the Co/p-poly-SiGe interface. And it may be helpful to can explain some observed deviations from the ideal metal-semiconductor contact mode.
{"title":"The inhomogeneity of Co/p-poly-Si/sub 0.84/Ge/sub 0.16/ Schottky contact","authors":"Guang-Wei Wang, G. Ru, X. Qu, Bingzong Li","doi":"10.1109/IWJT.2004.1306784","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306784","url":null,"abstract":"The Schottky junction Co/p-poly-SiGe was formed by deposition of Co on p-poly-SiGe thin film through ion beam sputtering (IBS) technique. Inhomogeneity of the Co/p-poly-SiGe contact was studied by I-V-T method in a wide temperature range. The parameters of the Schottky structure can be extracted from the thermionic emission model precisely. Our results show that both the Schottky barrier height and ideality factor are strongly temperature dependent and weakly bias dependent. It is ascribed to the spatial inhomogeneity of the Co/p-poly-SiGe interface. And it may be helpful to can explain some observed deviations from the ideal metal-semiconductor contact mode.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122944659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306767
J. Maul, U. Ehrke
This paper reports on routine SIMS applications in SiGe EPI and on Oxynitride process control including the quality control of the SIMS data itself. As an example an advanced SIMS protocol will be discussed for nm-thin high-k layer metrology. This protocol is based on low energy oxygen beam analysis, which provides improved quantification of the N distribution. We will present a new method, which allows accurate location of the interface position and measurement of the SiON layer thickness under this protocol. SiON production process variations have been investigated and will be reported as well.
{"title":"Characterization of thin layers in shallow junction technology by quadrupole SIMS","authors":"J. Maul, U. Ehrke","doi":"10.1109/IWJT.2004.1306767","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306767","url":null,"abstract":"This paper reports on routine SIMS applications in SiGe EPI and on Oxynitride process control including the quality control of the SIMS data itself. As an example an advanced SIMS protocol will be discussed for nm-thin high-k layer metrology. This protocol is based on low energy oxygen beam analysis, which provides improved quantification of the N distribution. We will present a new method, which allows accurate location of the interface position and measurement of the SiON layer thickness under this protocol. SiON production process variations have been investigated and will be reported as well.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132649138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306791
Ma Long, Wang Yan, Yu Zhiping, Tian Li-lin
AlGaN/GaN HEMTs, also referred to MODFETs, have been a subject of intense recent investigation and have emerged as attractive candidates for high voltage, high-power operation at microwave frequencies for its high peak electron velocity, saturation velocity, saturation velocity, thermal stability and breakdown fields properties. In this paper, we take account of spontaneous and piezoelectric polarization effect at the hetero-interface in AlGaN/GaN HEMT device and one-dimensional Poisson-Schrodinger equations using nonuniform mesh are solved self-consistently, from which the AlGaN/GaN heterostructure conduction band and the 2DEG density are investigated. The dependences of 2DEG characteristics on the Al mole fraction, the thickness of each layer, the donor concentration and the gate voltage are investigated through simulation, respectively. The influence of spacer layer width on the 2DEG density is calculated for the first time.
{"title":"Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT","authors":"Ma Long, Wang Yan, Yu Zhiping, Tian Li-lin","doi":"10.1109/IWJT.2004.1306791","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306791","url":null,"abstract":"AlGaN/GaN HEMTs, also referred to MODFETs, have been a subject of intense recent investigation and have emerged as attractive candidates for high voltage, high-power operation at microwave frequencies for its high peak electron velocity, saturation velocity, saturation velocity, thermal stability and breakdown fields properties. In this paper, we take account of spontaneous and piezoelectric polarization effect at the hetero-interface in AlGaN/GaN HEMT device and one-dimensional Poisson-Schrodinger equations using nonuniform mesh are solved self-consistently, from which the AlGaN/GaN heterostructure conduction band and the 2DEG density are investigated. The dependences of 2DEG characteristics on the Al mole fraction, the thickness of each layer, the donor concentration and the gate voltage are investigated through simulation, respectively. The influence of spacer layer width on the 2DEG density is calculated for the first time.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"48 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116374392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306863
Jinyu Zhang, Shi Xiaokang, K. Suzuki, H. Oka
A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulation into amorphous Silicon material. The injection ion is split two virtual ions during each nuclear scattering with target atom. The virtual ions have different energy and weight which is different from other splitting scheme. The high energy virtual ion still runs but the rest position of the low energy virtual ion can be acquired by a pre-calculated database called LERPD (Low Energy Rest Position Database). About 3 orders statistic enhancement can be acquired compared with that of no splitting algorithm in almost the same CPU time.
针对非晶硅材料中MC (Monte Carlo)离子注入模拟，提出了一种新的分裂算法MC- aipa。注入离子在每次与目标原子的核散射过程中分裂成两个虚离子。虚离子具有不同的能量和质量，这与其他分裂方案不同。高能虚离子仍然运行，但低能虚离子的静止位置可以通过预先计算的数据库LERPD (low energy rest position database)获得。在几乎相同的CPU时间内，与不分割算法相比，统计量提高了约3个数量级。
{"title":"Monte Carlo amorphous ion implantation possibility algorithm","authors":"Jinyu Zhang, Shi Xiaokang, K. Suzuki, H. Oka","doi":"10.1109/IWJT.2004.1306863","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306863","url":null,"abstract":"A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulation into amorphous Silicon material. The injection ion is split two virtual ions during each nuclear scattering with target atom. The virtual ions have different energy and weight which is different from other splitting scheme. The high energy virtual ion still runs but the rest position of the low energy virtual ion can be acquired by a pre-calculated database called LERPD (Low Energy Rest Position Database). About 3 orders statistic enhancement can be acquired compared with that of no splitting algorithm in almost the same CPU time.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121132436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306747
Y. Nanishi
This paper reviews potential and present status of AlGaN/GaN HFETs. High potential of these devices for high-power and high-frequency operation are explained from the physical properties of GaN and AlGaN/GaN hetero-structures. Present status of theses device performances are briefly introduced. Over 150 W operation at 2 GHz and 3.2 W operation at 30 GHz has been already achieved so far, verifying high-potential of this :material system. Issues for further improvements of these device performances as well as issues for production level technology are discussed.
{"title":"Recent development of nitride semiconductor electronic devices for next generation wireless communications","authors":"Y. Nanishi","doi":"10.1109/IWJT.2004.1306747","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306747","url":null,"abstract":"This paper reviews potential and present status of AlGaN/GaN HFETs. High potential of these devices for high-power and high-frequency operation are explained from the physical properties of GaN and AlGaN/GaN hetero-structures. Present status of theses device performances are briefly introduced. Over 150 W operation at 2 GHz and 3.2 W operation at 30 GHz has been already achieved so far, verifying high-potential of this :material system. Issues for further improvements of these device performances as well as issues for production level technology are discussed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126822807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306798
J. Tsai, S. Chiu, Ying-Cheng Chu, King-Poul Zhu
A high-performance InGaP/InGaAs/GaAs p-channel pseudomorphic modulation-doped field effect transistor based on p/sup +/-GaAs/n/sup +/-InGaP/p-InGaP camel-like gate structure is demonstrated. Due to the p-n depletion of the camel-like gate and the presence of relatively large /spl Delta/Ev at InGaP/InGaAs heterostructure, an extremely large gate turn-on voltage than 2 V is measured. For a 1/spl times/100 /spl mu/m/sup 2/ device, the experimental results show a maximum saturation current density of -345 mA/mm and a widely broad gate voltage swing than 4 V with 80 % maximum transconductance. Furthermore, the f/sub T/ and f/sub max/ values are 3.1 and 4.8 GHz, respectively.
{"title":"Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor","authors":"J. Tsai, S. Chiu, Ying-Cheng Chu, King-Poul Zhu","doi":"10.1109/IWJT.2004.1306798","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306798","url":null,"abstract":"A high-performance InGaP/InGaAs/GaAs p-channel pseudomorphic modulation-doped field effect transistor based on p/sup +/-GaAs/n/sup +/-InGaP/p-InGaP camel-like gate structure is demonstrated. Due to the p-n depletion of the camel-like gate and the presence of relatively large /spl Delta/Ev at InGaP/InGaAs heterostructure, an extremely large gate turn-on voltage than 2 V is measured. For a 1/spl times/100 /spl mu/m/sup 2/ device, the experimental results show a maximum saturation current density of -345 mA/mm and a widely broad gate voltage swing than 4 V with 80 % maximum transconductance. Furthermore, the f/sub T/ and f/sub max/ values are 3.1 and 4.8 GHz, respectively.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122325955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306846
Rongkan Liu, D. Liu, U. Koenig, A. Gruhle, Jing Zhang, Kaicheng Li, Luncai Liu, H. Kibbel, U. Zeiler, Yukui Liu, Shiliu Xu, G. Hu
In this paper, a SiGe HBT was described, which was based on a unique process technology. To characterize the SiGe HBT, HP8510C network analyzer, HP83650A synthetic signal sources, HP8517b S parameter measuring systems etc. have been used for radio frequency performances. The measurements showed the satisfactory results. The SiGe HBT cutoff frequency f/sub T/ is 108GHz, and the maximum oscillation frequency f/sub Max/ is 157GHz.
{"title":"Research for SiGe HBT","authors":"Rongkan Liu, D. Liu, U. Koenig, A. Gruhle, Jing Zhang, Kaicheng Li, Luncai Liu, H. Kibbel, U. Zeiler, Yukui Liu, Shiliu Xu, G. Hu","doi":"10.1109/IWJT.2004.1306846","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306846","url":null,"abstract":"In this paper, a SiGe HBT was described, which was based on a unique process technology. To characterize the SiGe HBT, HP8510C network analyzer, HP83650A synthetic signal sources, HP8517b S parameter measuring systems etc. have been used for radio frequency performances. The measurements showed the satisfactory results. The SiGe HBT cutoff frequency f/sub T/ is 108GHz, and the maximum oscillation frequency f/sub Max/ is 157GHz.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133051967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306782
Shiyang Zhu, G. Ru, X. Qu, R. Van Meirhaeghe, S. Forment, Bingzong Li
Ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2//n-Si(100) contacts with different x value were formed by solid phase reaction of Co/Ni bilayer and substrate Si. Their Schottky barrier properties were studied using the current voltage-temperature (I-V-T) measurements range from 100 to 300K. The I-V-T curves show three typical types, which can be related to the barrier height inhomogeneity. A clean trend is found that the barrier height inhomogeneity increases with increasing the annealing temperature. Ni incorporation reduces not only the silicidation temperature, but also the temperature at which the contact becomes inhomogeneity.
{"title":"I-V-T studies on ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2//n-Si Schottky contacts","authors":"Shiyang Zhu, G. Ru, X. Qu, R. Van Meirhaeghe, S. Forment, Bingzong Li","doi":"10.1109/IWJT.2004.1306782","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306782","url":null,"abstract":"Ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2//n-Si(100) contacts with different x value were formed by solid phase reaction of Co/Ni bilayer and substrate Si. Their Schottky barrier properties were studied using the current voltage-temperature (I-V-T) measurements range from 100 to 300K. The I-V-T curves show three typical types, which can be related to the barrier height inhomogeneity. A clean trend is found that the barrier height inhomogeneity increases with increasing the annealing temperature. Ni incorporation reduces not only the silicidation temperature, but also the temperature at which the contact becomes inhomogeneity.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131837585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306749
B. Cho, D. Poon, L. Tan, M. Bhat, A. See
Advantages of multiple-pulse Laser Thermal Annealing (LTA) with a moderate energy fluence on preamorphized silicon are described. Re-distribution of laser annealed boron junction during subsequent RTA is also studied. A method to optimize the multiple-pulse LTA condition is proposed. It is also demonstrated that Hall analysis can be used as a quick evaluation tool of the integrity of the junctions.
{"title":"Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization","authors":"B. Cho, D. Poon, L. Tan, M. Bhat, A. See","doi":"10.1109/IWJT.2004.1306749","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306749","url":null,"abstract":"Advantages of multiple-pulse Laser Thermal Annealing (LTA) with a moderate energy fluence on preamorphized silicon are described. Re-distribution of laser annealed boron junction during subsequent RTA is also studied. A method to optimize the multiple-pulse LTA condition is proposed. It is also demonstrated that Hall analysis can be used as a quick evaluation tool of the integrity of the junctions.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134205953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306756
J. Hautala, J. Borland, M. Tabat, W. Skinner
We report for the first time results on infusion doping of boron for ultra shallow junctions (USJ). Using B/sub 2/H/sub 6/ or BF/sub 3/ source gas, the resulting USJ boron dopant profile measured by SIMS shows no evidence of channeling with extreme abruptness of <2.5nm/decade for a 12 nm shallow junction. Infusion doping shows a power log to the 1/3 relationship between energy to junction depth in contrast to the traditional linear fit observed with ion implantation due to nuclear stopping power effects. Boron surface doping levels of 1-2E22/cm/sup 3/ for 2E16/cm/sup 2/ doses were achieved. Dopant activation using low temperature furnace annealing from 450/spl deg/C to 950/spl deg/C were compared using standard 4PP and non-penetrating elastic material 4PP for sheet resistance measurements,on these USJ structures. Also, electrically active dopant profiling was conducted using spreading resistance profile (SRP) for USJ junction depth (Xj) comparison to SIMS. Use of amorphizing implantation resulted in lower Rs values after low temperature SPE annealing.
{"title":"Infusion doping for USJ formation","authors":"J. Hautala, J. Borland, M. Tabat, W. Skinner","doi":"10.1109/IWJT.2004.1306756","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306756","url":null,"abstract":"We report for the first time results on infusion doping of boron for ultra shallow junctions (USJ). Using B/sub 2/H/sub 6/ or BF/sub 3/ source gas, the resulting USJ boron dopant profile measured by SIMS shows no evidence of channeling with extreme abruptness of <2.5nm/decade for a 12 nm shallow junction. Infusion doping shows a power log to the 1/3 relationship between energy to junction depth in contrast to the traditional linear fit observed with ion implantation due to nuclear stopping power effects. Boron surface doping levels of 1-2E22/cm/sup 3/ for 2E16/cm/sup 2/ doses were achieved. Dopant activation using low temperature furnace annealing from 450/spl deg/C to 950/spl deg/C were compared using standard 4PP and non-penetrating elastic material 4PP for sheet resistance measurements,on these USJ structures. Also, electrically active dopant profiling was conducted using spreading resistance profile (SRP) for USJ junction depth (Xj) comparison to SIMS. Use of amorphizing implantation resulted in lower Rs values after low temperature SPE annealing.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123715552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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