Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306759
W. Cho, C. Ahn, K. Im, Jong-Heon Yang, Jihun Oh, I. Baek, Seongjae Lee
A novel plasma doping technique for fabricating a nano-scale silicon-on-insulator (SOI) MOSFETs have been investigated. The S/D extensions of the tri-gate structure. SOI n-MOSFETs were formed by using elevated temperature plasma doping method. The activation annealing after plasma doping was excluded to minimize the diffusion of dopants, which resulted in laterally abrupt S/D junction. We obtained low damage shallow junctions and sheet resistance of 920 /spl Omega/ //spl square/ by the elevated temperature plasma doping of 527/spl deg/C. A tri-gate structure SOT n-MOSFET with a gate length of Sub-50 nm was successfully fabricated and revealed suppressed short channel effects.
{"title":"Elevated temperature plasma doping technology for sub-50 nm SOI n-MOSFETs","authors":"W. Cho, C. Ahn, K. Im, Jong-Heon Yang, Jihun Oh, I. Baek, Seongjae Lee","doi":"10.1109/IWJT.2004.1306759","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306759","url":null,"abstract":"A novel plasma doping technique for fabricating a nano-scale silicon-on-insulator (SOI) MOSFETs have been investigated. The S/D extensions of the tri-gate structure. SOI n-MOSFETs were formed by using elevated temperature plasma doping method. The activation annealing after plasma doping was excluded to minimize the diffusion of dopants, which resulted in laterally abrupt S/D junction. We obtained low damage shallow junctions and sheet resistance of 920 /spl Omega/ //spl square/ by the elevated temperature plasma doping of 527/spl deg/C. A tri-gate structure SOT n-MOSFET with a gate length of Sub-50 nm was successfully fabricated and revealed suppressed short channel effects.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122360557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306750
S. Umisedo, N. Hamamoto, S. Sakai, M. Tanjyo, N. Nagai, M. Naito
Advanced sub-micron device fabrication with the Ultra Shallow Junction requires below 1 keV Boron doping. Modem ion implanters which have a capability of ion mass analysis, energy contaminants elimination, and implant angle control have been developed for precisely controlled ion implantation. However, it is well known that as the energy goes down the beam diverges due to the space charge effect, which results in the loss of the beam current and the angle deviation of each ion. It is expected to overcome this effect by using a molecular ion beam, such as decaborane (B/sub 10/H/sub 14/). This paper presents Nissin's latest low energy Boron implantation technology using decaborane molecule, which is developed vigorously as a promising future implantation technology.
{"title":"Low energy implantation technology with decaborane molecular ion beam","authors":"S. Umisedo, N. Hamamoto, S. Sakai, M. Tanjyo, N. Nagai, M. Naito","doi":"10.1109/IWJT.2004.1306750","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306750","url":null,"abstract":"Advanced sub-micron device fabrication with the Ultra Shallow Junction requires below 1 keV Boron doping. Modem ion implanters which have a capability of ion mass analysis, energy contaminants elimination, and implant angle control have been developed for precisely controlled ion implantation. However, it is well known that as the energy goes down the beam diverges due to the space charge effect, which results in the loss of the beam current and the angle deviation of each ion. It is expected to overcome this effect by using a molecular ion beam, such as decaborane (B/sub 10/H/sub 14/). This paper presents Nissin's latest low energy Boron implantation technology using decaborane molecule, which is developed vigorously as a promising future implantation technology.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122381896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306847
Wang Minsheng, Wei Rongshan, Deng Ning, C. Peiyi
In our experiments, vertical aligned superlattices of multiple self-assembled Ge island layers separated by Si spacer layers on Si(100) substrates have been grown by ultra high vacuum chemical vapor deposition system (UHV/CVD). The photoluminescence of material was excited with 500nm laser and measured at 10 K, the PL peaks representing Ge islands and Si wetting layers were observed at 825 and 1010 mev respectively. Based on this material, samples of quantum dot infrared photo-detectors (QDIP), with p-i-n junctions, were fabricated. The responsivity of the detectors was measured with various semiconductor light-emitting diodes and semiconductor lasers. At room temperature and at -3V applied bias, for samples with 245 /spl times/ 245 /spl mu/m/sup 2/ large window and dark current I/sub d//spl sim/10/sup -9/A, the maximum photocurrent responsivity of 0.52 A/W at 774 nm was found, and 0.043mA/W at 1.31 /spl mu/m. Higher responsivities can be obtained with a waveguide geometry and optimization of the whole structure, such as thickness of layers and type of doping.
{"title":"Ge quantum dot infrared photo-detector","authors":"Wang Minsheng, Wei Rongshan, Deng Ning, C. Peiyi","doi":"10.1109/IWJT.2004.1306847","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306847","url":null,"abstract":"In our experiments, vertical aligned superlattices of multiple self-assembled Ge island layers separated by Si spacer layers on Si(100) substrates have been grown by ultra high vacuum chemical vapor deposition system (UHV/CVD). The photoluminescence of material was excited with 500nm laser and measured at 10 K, the PL peaks representing Ge islands and Si wetting layers were observed at 825 and 1010 mev respectively. Based on this material, samples of quantum dot infrared photo-detectors (QDIP), with p-i-n junctions, were fabricated. The responsivity of the detectors was measured with various semiconductor light-emitting diodes and semiconductor lasers. At room temperature and at -3V applied bias, for samples with 245 /spl times/ 245 /spl mu/m/sup 2/ large window and dark current I/sub d//spl sim/10/sup -9/A, the maximum photocurrent responsivity of 0.52 A/W at 774 nm was found, and 0.043mA/W at 1.31 /spl mu/m. Higher responsivities can be obtained with a waveguide geometry and optimization of the whole structure, such as thickness of layers and type of doping.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114904481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306764
E. Seebauer
There is increasing evidence that surface proximity effects must be incorporated into models for transient enhanced diffusion (TED). The present work examines the previously unrecognized influence that near-surface band bending can have on dopant profiles. Experiments employ the optical technique of photoreflectance to show that band bending exists at the Si-SiO/sub 2/ interface just after implantation. The effects of such band bending are investigated numerically using a simulator whose rate parameters have been developed from literature data using Maximum Likelihood (ML) estimation together with multivariate statistics to quantify accuracy. The resulting simulator yields excellent fits of SIMS profiles with no freely adjustable parameters, and shows that band bending transforms interfaces into reflectors of charged interstitials (i.e., no flux), even if the interface would otherwise serve as a good sink for these defects. This transformation deepens the junction significantly and also induces the pileup of dopant very close to the interface.
{"title":"Surface control of interstitial behavior for improved ultrashallow junction formation","authors":"E. Seebauer","doi":"10.1109/IWJT.2004.1306764","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306764","url":null,"abstract":"There is increasing evidence that surface proximity effects must be incorporated into models for transient enhanced diffusion (TED). The present work examines the previously unrecognized influence that near-surface band bending can have on dopant profiles. Experiments employ the optical technique of photoreflectance to show that band bending exists at the Si-SiO/sub 2/ interface just after implantation. The effects of such band bending are investigated numerically using a simulator whose rate parameters have been developed from literature data using Maximum Likelihood (ML) estimation together with multivariate statistics to quantify accuracy. The resulting simulator yields excellent fits of SIMS profiles with no freely adjustable parameters, and shows that band bending transforms interfaces into reflectors of charged interstitials (i.e., no flux), even if the interface would otherwise serve as a good sink for these defects. This transformation deepens the junction significantly and also induces the pileup of dopant very close to the interface.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130316305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306748
K. Suguro, T. Ito, K. Matsuo, T. Iinuma, K. Nishinohara
This paper presents ultra shallow junction with low resistance in 45-65nm technology node. Rapid thermal annealing is required to form ultra-shallow, low sheet resistance and lower dislocation density for satisfying the pn junction leakage specification of mobile LSIs. In order to minimize the annealing time at high temperatures, various kinds of ultra-rapid thermal annealing technology such as advanced spike RTA, laser annealing, SPE, flash lamp annealing are compared. Issues of this technology are simultaneously accomplishing ultrashallow Xj, lower sheet resistance and lower crystal damage density for fabricating advanced MOSFETs. By optimizing various process conditions, we can successfully obtain ultra shallow p+/n and n+/p junction of less than 10 nm. In this paper, we overview the prospects for ultra-rapid thermal process for advanced CMOSFETs.
{"title":"Overview of the prospects of ultra-rapid thermal process for advanced CMOSFETs","authors":"K. Suguro, T. Ito, K. Matsuo, T. Iinuma, K. Nishinohara","doi":"10.1109/IWJT.2004.1306748","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306748","url":null,"abstract":"This paper presents ultra shallow junction with low resistance in 45-65nm technology node. Rapid thermal annealing is required to form ultra-shallow, low sheet resistance and lower dislocation density for satisfying the pn junction leakage specification of mobile LSIs. In order to minimize the annealing time at high temperatures, various kinds of ultra-rapid thermal annealing technology such as advanced spike RTA, laser annealing, SPE, flash lamp annealing are compared. Issues of this technology are simultaneously accomplishing ultrashallow Xj, lower sheet resistance and lower crystal damage density for fabricating advanced MOSFETs. By optimizing various process conditions, we can successfully obtain ultra shallow p+/n and n+/p junction of less than 10 nm. In this paper, we overview the prospects for ultra-rapid thermal process for advanced CMOSFETs.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123515496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306851
Ma Li, G. Yong
Novel structure to realize an ideal ohmic contact with the n/sup +/ region substituted by p/sup +/-n/sup +/ mosaic structure for the p/sup +/(SiGe)-n/sup -/-n/sup +/ hetero-junction switching power diodes is proposed. The reverse recovery characteristics of p/sup +/(SiGe)-n/sup -/-n/sup +/ diodes utilizing an ideal ohmic contact are much more improved but not notably sacrificing the forward voltage drop. there are about two thirds shorter in the reverse recovery time and a half shorter in peak reverse current than conventional p/sup +/(SiGe)-n/sup -/-n/sup +/ diodes, furthermore, far lower leakage current is exhibited. The new kind of high-speed and soft p/sup +/(SiGe)-n/sup -/-n/sup +/ diode is easily incorporated into monolithic combination with transistors, and is useful for various power applications. These improvements are achieved without resorting lifetime killing and thus the devices can be easily integrated into power ICs.
{"title":"A novel SiGe/Si hetero-junction power diode utilizing an ideal ohmic contact","authors":"Ma Li, G. Yong","doi":"10.1109/IWJT.2004.1306851","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306851","url":null,"abstract":"Novel structure to realize an ideal ohmic contact with the n/sup +/ region substituted by p/sup +/-n/sup +/ mosaic structure for the p/sup +/(SiGe)-n/sup -/-n/sup +/ hetero-junction switching power diodes is proposed. The reverse recovery characteristics of p/sup +/(SiGe)-n/sup -/-n/sup +/ diodes utilizing an ideal ohmic contact are much more improved but not notably sacrificing the forward voltage drop. there are about two thirds shorter in the reverse recovery time and a half shorter in peak reverse current than conventional p/sup +/(SiGe)-n/sup -/-n/sup +/ diodes, furthermore, far lower leakage current is exhibited. The new kind of high-speed and soft p/sup +/(SiGe)-n/sup -/-n/sup +/ diode is easily incorporated into monolithic combination with transistors, and is useful for various power applications. These improvements are achieved without resorting lifetime killing and thus the devices can be easily integrated into power ICs.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114793407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306751
A. Pouydebasque, B. Dumont, R. El Farhanel, F. Boeuf, A. Muller, A. Hafimaoui, T. Skotnicki
We present in this paper a detailed analysis of the electrical behavior of NMOS transistors where the source/drain extensions (SDE) were doped either by As, Xe pre-amorphizing implant (PAI) + As, Sb or Xe PAI + Sb. The Sb splits show better threshold voltage characteristics in comparison with As: delayed Vt rolldown, reduced Short Channel Effect (SCE) and Drain Induced Barrier Lowering (DIBL). Moreover, the I/sub on//I/sub off/ trade-off analysis reveals that more than 10% improvement in the performance can be obtained with Sb compared to the As reference that is due to a reduction in the access resistance R/sub access/. This makes Sb a very promising candidate for N-type Ultra-Shallow Junctions (USJ) for future CMOS generations. Xe PAI induces excellent sub-threshold characteristics due to the lowering of the junction depth Xj; however the I/sub on/ is dramatically reduced in this case because of much higher R/sub access/.
本文详细分析了源极/漏极扩展(SDE)掺杂As、Xe预非晶植入物(PAI) + As、Sb或Xe PAI + Sb的NMOS晶体管的电学行为。与As相比，Sb的劈裂表现出更好的阈值电压特性:延迟Vt降、减少短通道效应(SCE)和漏极诱导势垒降低(DIBL)。此外，I/sub on//I/sub off/权衡分析表明，与As参考相比，Sb可以获得10%以上的性能提高，这是由于访问电阻R/sub access/的降低。这使得Sb成为未来几代CMOS中n型超浅结(USJ)的非常有前途的候选者。由于结深Xj的降低，xpai产生了优异的亚阈值特性;然而，在这种情况下，由于更高的R/sub访问，/上的I/sub显着减少。
{"title":"A study of antimony or arsenic implanted extensions with or without xenon pre-amorphization","authors":"A. Pouydebasque, B. Dumont, R. El Farhanel, F. Boeuf, A. Muller, A. Hafimaoui, T. Skotnicki","doi":"10.1109/IWJT.2004.1306751","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306751","url":null,"abstract":"We present in this paper a detailed analysis of the electrical behavior of NMOS transistors where the source/drain extensions (SDE) were doped either by As, Xe pre-amorphizing implant (PAI) + As, Sb or Xe PAI + Sb. The Sb splits show better threshold voltage characteristics in comparison with As: delayed Vt rolldown, reduced Short Channel Effect (SCE) and Drain Induced Barrier Lowering (DIBL). Moreover, the I/sub on//I/sub off/ trade-off analysis reveals that more than 10% improvement in the performance can be obtained with Sb compared to the As reference that is due to a reduction in the access resistance R/sub access/. This makes Sb a very promising candidate for N-type Ultra-Shallow Junctions (USJ) for future CMOS generations. Xe PAI induces excellent sub-threshold characteristics due to the lowering of the junction depth Xj; however the I/sub on/ is dramatically reduced in this case because of much higher R/sub access/.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133282291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306836
H. Pu, Zhiming Chen, Xianfeng Feng, B. Ma, Liucheng Li
The novel near infrared light-activated Darlington heterojunction transistor power switch made of SiC has been proposed, in which SiCGe/SiC pn is employed to produce a base current by means of optical illumination. By using two-dimensional numerical simulation MEDICI, the SiCGe/SiC photodetector can be triggered by a near infer-red laser beam if the composition parameters of the Sil-x-yCxGey have been chosen properly. Performance of the near Infrared light-activated power switch was simulated, which has shown that the light-activated device has very good switching characteristics at 0.85/spl mu/m for optical intensity of 1.0 Watt/cm2. Based on our simulation results, the distribution of current density predicts that the auxiliary transistor is turned on at first by a low density of photocurrent and then the main transistor is turned on. The collector current of the device in the on-state is concentrated in a region underneath the main emitter.
提出了一种新型的近红外光激活的碳化硅达林顿异质结晶体管功率开关，该开关采用SiCGe/SiC pn通过光学照明产生基极电流。通过二维数值模拟MEDICI，在选取合适的si -x- ycxgey组成参数的情况下，可以用近红激光束触发SiCGe/SiC光电探测器。对近红外光激活功率开关的性能进行了仿真，结果表明，当光强为1.0 w /cm2时，光激活器件在0.85/spl mu/m时具有很好的开关特性。根据模拟结果，电流密度的分布预示着辅助晶体管首先被低密度的光电流导通，然后主晶体管导通。导通状态下装置的集电极电流集中在主发射极下方的区域。
{"title":"Simulation of a near infrared light-activated 4H-SiC Darlington transistor switches","authors":"H. Pu, Zhiming Chen, Xianfeng Feng, B. Ma, Liucheng Li","doi":"10.1109/IWJT.2004.1306836","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306836","url":null,"abstract":"The novel near infrared light-activated Darlington heterojunction transistor power switch made of SiC has been proposed, in which SiCGe/SiC pn is employed to produce a base current by means of optical illumination. By using two-dimensional numerical simulation MEDICI, the SiCGe/SiC photodetector can be triggered by a near infer-red laser beam if the composition parameters of the Sil-x-yCxGey have been chosen properly. Performance of the near Infrared light-activated power switch was simulated, which has shown that the light-activated device has very good switching characteristics at 0.85/spl mu/m for optical intensity of 1.0 Watt/cm2. Based on our simulation results, the distribution of current density predicts that the auxiliary transistor is turned on at first by a low density of photocurrent and then the main transistor is turned on. The collector current of the device in the on-state is concentrated in a region underneath the main emitter.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114299560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306788
H.M. Zhou, B. Shen, D.J. Chen, N. Tang, T.S. Chen, G. Jiao, L. Ru, R. Zhang, Y. Shi, Y.D. Zheng
The ohmic contacts of Ti/Al/Ni/Au and Ti/Al/Pt/Au multi-layer on unintentionally-doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures have been investigated. The specific contact resistivities of 1.26/spl times/10/sup -6/ /spl Omega//spl middot/cm/sup 2/ for Ti/Al/Ni/Au contact and 1.97 /spl times/ 10/sup -5/ /spl Omega//spl middot/cm/sup 2/ for Ti/Al/Pt/Au contact were obtained. It is found that the Pt element in Ti/Al/Pt/Au multi-layer influent the diffusion of Al atom into the Au layer, which results in the higher contact resistivity of Ti/Al/Pt/Au contact than that of Ti/Al/Ni/Au one. The formation of excellent ohmic contact on the Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures is attributed to the existing of a compatible barrier between the metal electrode and the carrier channel at the Al/sub 0.22/Ga/sub 0.78/N/GaN hetero-interface. The width of the barrier depends on the annealing temperature and duration.
{"title":"Ti/Al/Ni/Au and Ti/Al/Pt/Au multi-layer ohmic contacts on Al/sub x/Ga/sub 1-x/N/GaN heterostructures","authors":"H.M. Zhou, B. Shen, D.J. Chen, N. Tang, T.S. Chen, G. Jiao, L. Ru, R. Zhang, Y. Shi, Y.D. Zheng","doi":"10.1109/IWJT.2004.1306788","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306788","url":null,"abstract":"The ohmic contacts of Ti/Al/Ni/Au and Ti/Al/Pt/Au multi-layer on unintentionally-doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures have been investigated. The specific contact resistivities of 1.26/spl times/10/sup -6/ /spl Omega//spl middot/cm/sup 2/ for Ti/Al/Ni/Au contact and 1.97 /spl times/ 10/sup -5/ /spl Omega//spl middot/cm/sup 2/ for Ti/Al/Pt/Au contact were obtained. It is found that the Pt element in Ti/Al/Pt/Au multi-layer influent the diffusion of Al atom into the Au layer, which results in the higher contact resistivity of Ti/Al/Pt/Au contact than that of Ti/Al/Ni/Au one. The formation of excellent ohmic contact on the Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures is attributed to the existing of a compatible barrier between the metal electrode and the carrier channel at the Al/sub 0.22/Ga/sub 0.78/N/GaN hetero-interface. The width of the barrier depends on the annealing temperature and duration.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125285068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306794
J. Lu, B. Shen, N. Tang, D.J. Chen, R. Zhang, Y. Shi, Y.D. Zheng
The weak-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al/sub 0.22/Ga/sub 0.78/N/GaN single quantum well has been investigated through the magnetoresistance measurements. The elastic scattering time /spl tau//sub e/, dephasing time /spl tau//sub /spl phi// and spin-orbit(s-o) scattering time /spl tau//sub so/ at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the anti-weak localization is observed clearly, which is due to the strong spin-orbit interaction. The spin-orbit effect dominates the quantum correction of the conductivity in the upper subband. The intersubband scattering becomes stronger with increasing temperature.
{"title":"Anti-weak localization of the two dimensional electron gas in modulation-doped Al/sub x/Ga/sub 1-x/N/GaN single quantum well","authors":"J. Lu, B. Shen, N. Tang, D.J. Chen, R. Zhang, Y. Shi, Y.D. Zheng","doi":"10.1109/IWJT.2004.1306794","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306794","url":null,"abstract":"The weak-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al/sub 0.22/Ga/sub 0.78/N/GaN single quantum well has been investigated through the magnetoresistance measurements. The elastic scattering time /spl tau//sub e/, dephasing time /spl tau//sub /spl phi// and spin-orbit(s-o) scattering time /spl tau//sub so/ at various temperatures are obtained. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the anti-weak localization is observed clearly, which is due to the strong spin-orbit interaction. The spin-orbit effect dominates the quantum correction of the conductivity in the upper subband. The intersubband scattering becomes stronger with increasing temperature.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127263385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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