Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306773
M. Tao, D. Udeshi, S. Agarwal, R. Kolappan, Y. Xu, E. Maldonado, W. Kirk
The Schottky barrier height at a metal/Si interface is ideally determined by the difference between metal work function and Si electron affinity for n-type Si. In reality, interface states between metal and Si pin the interface Fermi level, making the barrier height more or less independent of the ideal barrier height. We demonstrate that, by terminating dangling bonds on n-type Si(100) with a monolayer of Se, interface states are significantly reduced between metal and Si. As a result, low Schottky barriers are obtained for metals with low ideal barrier heights, such as Al and Cr. A negative Schottky barrier is demonstrated between Si and Ti, a metal commonly-used in the semiconductor industry. The negative Schottky barrier is thermally stable up to 400/spl deg/C. For metals with high ideal barrier heights, inconsistency is observed between ideal barrier height and measured barrier height even with Se passivation.
{"title":"Se-passivated Si(100) surface for low and negative Schottky barriers","authors":"M. Tao, D. Udeshi, S. Agarwal, R. Kolappan, Y. Xu, E. Maldonado, W. Kirk","doi":"10.1109/IWJT.2004.1306773","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306773","url":null,"abstract":"The Schottky barrier height at a metal/Si interface is ideally determined by the difference between metal work function and Si electron affinity for n-type Si. In reality, interface states between metal and Si pin the interface Fermi level, making the barrier height more or less independent of the ideal barrier height. We demonstrate that, by terminating dangling bonds on n-type Si(100) with a monolayer of Se, interface states are significantly reduced between metal and Si. As a result, low Schottky barriers are obtained for metals with low ideal barrier heights, such as Al and Cr. A negative Schottky barrier is demonstrated between Si and Ti, a metal commonly-used in the semiconductor industry. The negative Schottky barrier is thermally stable up to 400/spl deg/C. For metals with high ideal barrier heights, inconsistency is observed between ideal barrier height and measured barrier height even with Se passivation.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126354875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306779
O. Nakatsuka, K. Okubo, A. Sakai, S. Zaima, Y. Yasuda
The crystalline structure and electrical properties of an epitaxial Ni silicide film formed in a Ni/Ti/Si system were investigated. The {111} facets at the Ni silicide/Si interface disappears with increasing the annealing temperature. As the result, the film morphology is improved and the sheet resistance of the film is reduced. Pseudomorphic metastable-NiSi/sub 2/ is formed after annealing at 350/spl deg/C, and that transforms to pseudomorphic NiSi/sub 2/ with the CaF/sub 2/-type structure at 650/spl deg/C. The epitaxial NiSi/sub 2/ film after annealing at 850/spl deg/C has the in-plane tensile strain on the Si substrate.
{"title":"Growth mechanism of epitaxial NiSi/sub 2/ layer in the Ni/Ti/Si(001) contact for atomically flat interfaces","authors":"O. Nakatsuka, K. Okubo, A. Sakai, S. Zaima, Y. Yasuda","doi":"10.1109/IWJT.2004.1306779","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306779","url":null,"abstract":"The crystalline structure and electrical properties of an epitaxial Ni silicide film formed in a Ni/Ti/Si system were investigated. The {111} facets at the Ni silicide/Si interface disappears with increasing the annealing temperature. As the result, the film morphology is improved and the sheet resistance of the film is reduced. Pseudomorphic metastable-NiSi/sub 2/ is formed after annealing at 350/spl deg/C, and that transforms to pseudomorphic NiSi/sub 2/ with the CaF/sub 2/-type structure at 650/spl deg/C. The epitaxial NiSi/sub 2/ film after annealing at 850/spl deg/C has the in-plane tensile strain on the Si substrate.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"4 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113980904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306772
D. Chi, R.T.-P. Lee, S. Chua
As the industry approaches sub-100 nm technology nodes, the trend is to replace cobalt silicide with nickel monosilicide (NiSi) since the use of NiSi for contact metallization shows a number of technological advantages, including its line-width independent low resistivity, less Si consumption and low thermal budget for its formation, and compatibility with Si/sub 1-x/Ge/sub x/ substrate technology. However, NiSi has not been considered as a serious candidate until recently mainly due to its poor morphological/thermal stability. Recent studies have shown that the morphological/thermal stability of NiSi can be enhanced substantially through the addition of a small amount of impurities, resulting in much improved silicided shallow junction integrity. In addition to improving the morphological/thermal stability, it has also been demonstrated that the addition of certain impurities, such as Ti, effectively reduces the sensitivity of NiSi formation to surface contaminants (e.g., residual interfacial oxide). This paper will present and discuss the details of these experimental results.
{"title":"Addressing materials and process-integration issues of NiSi silicide process using impurity engineering","authors":"D. Chi, R.T.-P. Lee, S. Chua","doi":"10.1109/IWJT.2004.1306772","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306772","url":null,"abstract":"As the industry approaches sub-100 nm technology nodes, the trend is to replace cobalt silicide with nickel monosilicide (NiSi) since the use of NiSi for contact metallization shows a number of technological advantages, including its line-width independent low resistivity, less Si consumption and low thermal budget for its formation, and compatibility with Si/sub 1-x/Ge/sub x/ substrate technology. However, NiSi has not been considered as a serious candidate until recently mainly due to its poor morphological/thermal stability. Recent studies have shown that the morphological/thermal stability of NiSi can be enhanced substantially through the addition of a small amount of impurities, resulting in much improved silicided shallow junction integrity. In addition to improving the morphological/thermal stability, it has also been demonstrated that the addition of certain impurities, such as Ti, effectively reduces the sensitivity of NiSi formation to surface contaminants (e.g., residual interfacial oxide). This paper will present and discuss the details of these experimental results.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134475937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306850
D.J. Kim, M. Sung, E. Kang, H.S. Chung, E. Nahm, D.J. Lee, J. Lee
In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET" (Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.
{"title":"Lateral trench electrode power MOS including a local doping region for power electronic system","authors":"D.J. Kim, M. Sung, E. Kang, H.S. Chung, E. Nahm, D.J. Lee, J. Lee","doi":"10.1109/IWJT.2004.1306850","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306850","url":null,"abstract":"In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called \"LTEMOSFET\" (Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133543071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306795
D.J. Chen, B. Shen, F. J. Xu, Y. Tao, R. Zhang, Y. Shi, Y.D. Zheng
GaN-rich side of GaN/sub 1-x/P/sub x/ ternary alloys have been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. The Ga 3d and P 2p core level peaks of the GaN/sub 1-x/P/sub x/ films show that P atoms in GaN/sub 1-x/P/sub x/ do partly occupy the N site but also is incorporated as interstitials of GaN/sub 1-x/P/sub x/ by means of X-ray photoelectron spectroscopy. X-ray diffraction spectra show that the (0002) peak of GaN/sub 1-x/P/sub x/ shifts to smaller angle with increasing P composition and the GaN/sub 1-x/P/sub x/ films are still of a typical hexagonal structure. The Raman spectra of GaN/sub 1-x/P/sub x/ films, recorded in backscattering geometry, exhibit four new vibrational modes at 256, 314, 377 and 428 cm/sup -1/ compared with an undoped GaN sample. Those modes are assigned to the so called quasi-local mode induced by P in GaN, disorder-activated scattering and gap modes related to the Ga-P bond vibrations, respectively.
{"title":"Structure properties of GaN/sub 1-x/P/sub x/ ternary alloys grown by metal-organic chemical vapor deposition","authors":"D.J. Chen, B. Shen, F. J. Xu, Y. Tao, R. Zhang, Y. Shi, Y.D. Zheng","doi":"10.1109/IWJT.2004.1306795","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306795","url":null,"abstract":"GaN-rich side of GaN/sub 1-x/P/sub x/ ternary alloys have been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. The Ga 3d and P 2p core level peaks of the GaN/sub 1-x/P/sub x/ films show that P atoms in GaN/sub 1-x/P/sub x/ do partly occupy the N site but also is incorporated as interstitials of GaN/sub 1-x/P/sub x/ by means of X-ray photoelectron spectroscopy. X-ray diffraction spectra show that the (0002) peak of GaN/sub 1-x/P/sub x/ shifts to smaller angle with increasing P composition and the GaN/sub 1-x/P/sub x/ films are still of a typical hexagonal structure. The Raman spectra of GaN/sub 1-x/P/sub x/ films, recorded in backscattering geometry, exhibit four new vibrational modes at 256, 314, 377 and 428 cm/sup -1/ compared with an undoped GaN sample. Those modes are assigned to the so called quasi-local mode induced by P in GaN, disorder-activated scattering and gap modes related to the Ga-P bond vibrations, respectively.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131134753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306800
J. Tsai, S. Chiu, Ying-Cheng Chu, King-Poul Zhu
A functional InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor (HBT) is fabricated and demonstrated. Due to the avalanche multiplication and discontinuous confinement effects for electrons at InGaP/GaAs heterojunction and InGaAs quantum well, an interesting triple-route S-shaped negative-differential-resistance switch is observed under inverted operation mode at room temperature. In addition, the excellent transistor performances including a high current gain of 220 and a low offset voltage of 60 mV are achieved under normal operation mode. Consequently, the excellent switching characteristic and transistor action of the studied HBT provides a promise for amplifier and multiple-valued logic circuit applications.
{"title":"A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor","authors":"J. Tsai, S. Chiu, Ying-Cheng Chu, King-Poul Zhu","doi":"10.1109/IWJT.2004.1306800","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306800","url":null,"abstract":"A functional InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor (HBT) is fabricated and demonstrated. Due to the avalanche multiplication and discontinuous confinement effects for electrons at InGaP/GaAs heterojunction and InGaAs quantum well, an interesting triple-route S-shaped negative-differential-resistance switch is observed under inverted operation mode at room temperature. In addition, the excellent transistor performances including a high current gain of 220 and a low offset voltage of 60 mV are achieved under normal operation mode. Consequently, the excellent switching characteristic and transistor action of the studied HBT provides a promise for amplifier and multiple-valued logic circuit applications.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114853470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306792
Y. Kong, Y.D. Zheng, C. Zhou, Y. Deng, S. Gu, B. Shen, R. Zhang, Y. Shi, P. Han, R. Jiang
Al content in Al/sub x/Ga/sub 1-x/N/GaN double heterostructure (DH) is improved high up to x=1 by using a compressively strained GaN quantum well (QW) layer. By solving the coupled Schrodinger and Poisson equations self-consistently, we investigate the two-dimensional electron gas (2DEG) distributions and sheet densities in Al/sub x/Ga/sub 1-x/N/GaN DHs. Comparing to the 2DEG in Al/sub 0.5/Ga/sub 0.5/N/GaN single heterostructure (SH), the 2DEG sheet density in a comparable AlN/GaN/Al/sub 0.5/Ga/sub 0.5/N DH is nearly doubled from 2.31/spl times/10/sup 13/cm/sup -3/ to 4.47 /spl times/ 10/sup 13/cm/sup -3/, mainly owing to the additional piezoelectric polarization in the GaN QW. It is also shown that 2DEG in the GaN QW is increased with increasing the Al content of the top barrier due to the stronger polarization effect and large conduction band offset at the Al,Ga/sub 1-x/N/GaN interface. Increasing the lower barrier thickness will reduce the 2DEG density in the GaN QW while the 2DEG at the lower Al/sub y/Ga/sub 1-y/N/GaN interface is increased, making the total 2DEG density almost a constant.
{"title":"Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure","authors":"Y. Kong, Y.D. Zheng, C. Zhou, Y. Deng, S. Gu, B. Shen, R. Zhang, Y. Shi, P. Han, R. Jiang","doi":"10.1109/IWJT.2004.1306792","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306792","url":null,"abstract":"Al content in Al/sub x/Ga/sub 1-x/N/GaN double heterostructure (DH) is improved high up to x=1 by using a compressively strained GaN quantum well (QW) layer. By solving the coupled Schrodinger and Poisson equations self-consistently, we investigate the two-dimensional electron gas (2DEG) distributions and sheet densities in Al/sub x/Ga/sub 1-x/N/GaN DHs. Comparing to the 2DEG in Al/sub 0.5/Ga/sub 0.5/N/GaN single heterostructure (SH), the 2DEG sheet density in a comparable AlN/GaN/Al/sub 0.5/Ga/sub 0.5/N DH is nearly doubled from 2.31/spl times/10/sup 13/cm/sup -3/ to 4.47 /spl times/ 10/sup 13/cm/sup -3/, mainly owing to the additional piezoelectric polarization in the GaN QW. It is also shown that 2DEG in the GaN QW is increased with increasing the Al content of the top barrier due to the stronger polarization effect and large conduction band offset at the Al,Ga/sub 1-x/N/GaN interface. Increasing the lower barrier thickness will reduce the 2DEG density in the GaN QW while the 2DEG at the lower Al/sub y/Ga/sub 1-y/N/GaN interface is increased, making the total 2DEG density almost a constant.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117352980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306774
A. Vengurlekar, S. Balasubramanian, S. Ashok, D. Theodore, D. Chi
Nickel silicide is being considered as a replacement for the currently used class of silicides-for contacts to the source, drain and gate regions in CMOS circuits. In this work, the effect of substrate hydrogenation by a hydrogen plasma treatment prior to nickel deposition and silicidation was studied. The sheet resistance of the silicide film was observed to decrease with hydrogenation at silicidation temperatures below 600/spl deg/C. However, defects are seen near the interface at the lower processing temperatures, while at higher temperatures greater in-diffusion of Ni into the hydrogenated Si samples is observed.
{"title":"Effect of silicon substrate hydrogenation treatment on nickel silicide formation","authors":"A. Vengurlekar, S. Balasubramanian, S. Ashok, D. Theodore, D. Chi","doi":"10.1109/IWJT.2004.1306774","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306774","url":null,"abstract":"Nickel silicide is being considered as a replacement for the currently used class of silicides-for contacts to the source, drain and gate regions in CMOS circuits. In this work, the effect of substrate hydrogenation by a hydrogen plasma treatment prior to nickel deposition and silicidation was studied. The sheet resistance of the silicide film was observed to decrease with hydrogenation at silicidation temperatures below 600/spl deg/C. However, defects are seen near the interface at the lower processing temperatures, while at higher temperatures greater in-diffusion of Ni into the hydrogenated Si samples is observed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125072207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306765
M. Jung, E. Seebauer
There has long been suspicion that the strong lamp illumination required for annealing after ion implantation may non-thermally influence the diffusion of dopants . Identification of such effects is difficult in conventional RTA geometries because lamps provide both heating and photostimulation, and because the interpretation of conventional dopant diffusion experiments is impeded by complex dopant-defect interactions. We have circumvented these problems with a new experimental design in which heating and illumination can be decoupled. Data interpretation has been simplified by examining the motion of isotopically labelled /sup 30/Si tracer in an epitaxial /sup 28/Si matrix using SIMS depth profiling. Results show that for n-type Si, self-diffusion rates are increased non-thermally by more than an order of magnitude for modest illumination intensities of 0.7 W/cm/sup 2/. There is no comparable effect for p-type material, however.
{"title":"Measurement of nonthermal illumination-enhanced self-diffusion in silicon","authors":"M. Jung, E. Seebauer","doi":"10.1109/IWJT.2004.1306765","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306765","url":null,"abstract":"There has long been suspicion that the strong lamp illumination required for annealing after ion implantation may non-thermally influence the diffusion of dopants . Identification of such effects is difficult in conventional RTA geometries because lamps provide both heating and photostimulation, and because the interpretation of conventional dopant diffusion experiments is impeded by complex dopant-defect interactions. We have circumvented these problems with a new experimental design in which heating and illumination can be decoupled. Data interpretation has been simplified by examining the motion of isotopically labelled /sup 30/Si tracer in an epitaxial /sup 28/Si matrix using SIMS depth profiling. Results show that for n-type Si, self-diffusion rates are increased non-thermally by more than an order of magnitude for modest illumination intensities of 0.7 W/cm/sup 2/. There is no comparable effect for p-type material, however.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116063168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-03-15DOI: 10.1109/IWJT.2004.1306754
A. Vengurlekar, S. Ashok, D. Theodore
In this work, we report on our study the effect of hydrogen plasma treatment by an ECR plasma on the activation and diffusion of boron in silicon at ultra-shallow depths. Hydrogenated and unhydrogenated samples were implanted with boron, followed by rapid thermal annealing for 20 seconds, at 450, 550, 650 and 850/spl deg/C. Spreading resistance profiling (SRP) was carried out on all the samples to determine the profile of the electrically active boron. It was seen that there was enhanced activation of boron at the lower annealing temperature of 450/spl deg/C. However no significant difference was observed at the higher annealing temperatures. The enhancement in boron activation at lower temperature was attributed to the creation of vacancies in the boron-implanted region, in addition to the lattice-relaxation effect by the presence of atomic hydrogen.
{"title":"Hydrogenation-enhanced low temperature activation of boron in silicon","authors":"A. Vengurlekar, S. Ashok, D. Theodore","doi":"10.1109/IWJT.2004.1306754","DOIUrl":"https://doi.org/10.1109/IWJT.2004.1306754","url":null,"abstract":"In this work, we report on our study the effect of hydrogen plasma treatment by an ECR plasma on the activation and diffusion of boron in silicon at ultra-shallow depths. Hydrogenated and unhydrogenated samples were implanted with boron, followed by rapid thermal annealing for 20 seconds, at 450, 550, 650 and 850/spl deg/C. Spreading resistance profiling (SRP) was carried out on all the samples to determine the profile of the electrically active boron. It was seen that there was enhanced activation of boron at the lower annealing temperature of 450/spl deg/C. However no significant difference was observed at the higher annealing temperatures. The enhancement in boron activation at lower temperature was attributed to the creation of vacancies in the boron-implanted region, in addition to the lattice-relaxation effect by the presence of atomic hydrogen.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121910422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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