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VLSI Design, Automation and Test(VLSI-DAT)最新文献

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Design-technology innovations enabling differentiation in emerging applications 设计技术创新使新兴应用差异化
Pub Date : 2015-04-27 DOI: 10.1109/VLSI-DAT.2015.7114560
S. Kengeri
Summary form only given. The rapid evolution of applications in the consumer and mobile space coupled with the emergence of the Internet of Things (IoT) are driving foundries to diversify design-technology solutions. This talk will discuss innovations that are on the horizon to enable differentiation in power, performance, cost, and time-to-volume, while solving the issues with unprecedented integration of “user-experience” functions. Technology innovations in the areas of FDSOI, eNVM, MEMS, RF, Ultra-Low Vmin SRAM, 3D and Design innovations on DVFS, Post-Silicon tuning, Analog optimization will be reviewed.
只提供摘要形式。消费者和移动领域应用的快速发展,加上物联网(IoT)的出现,正推动晶圆代工厂实现设计技术解决方案的多样化。本次演讲将讨论即将出现的创新,以实现功率、性能、成本和批量生产时间的差异化,同时解决前所未有的“用户体验”功能集成问题。在FDSOI、eNVM、MEMS、RF、超低Vmin SRAM、3D和DVFS的设计创新、后硅调谐、模拟优化等领域的技术创新将被回顾。
{"title":"Design-technology innovations enabling differentiation in emerging applications","authors":"S. Kengeri","doi":"10.1109/VLSI-DAT.2015.7114560","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2015.7114560","url":null,"abstract":"Summary form only given. The rapid evolution of applications in the consumer and mobile space coupled with the emergence of the Internet of Things (IoT) are driving foundries to diversify design-technology solutions. This talk will discuss innovations that are on the horizon to enable differentiation in power, performance, cost, and time-to-volume, while solving the issues with unprecedented integration of “user-experience” functions. Technology innovations in the areas of FDSOI, eNVM, MEMS, RF, Ultra-Low Vmin SRAM, 3D and Design innovations on DVFS, Post-Silicon tuning, Analog optimization will be reviewed.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117235452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Constraints and design approaches in analog ICs forlmplantable medical devices 可植入医疗设备模拟集成电路的限制和设计方法
Pub Date : 2015-04-27 DOI: 10.1109/VLSI-DAT.2015.7114545
F. Silveira, J. Oreggioni, Pablo Castro-Lisboa
Active implantable medical devices (AIMDs) are microsystems requiring ultra low energy operation, which is a characteristic increasingly shared by several other applications. On the other hand, AIMDs must comply with several specific constraints imposed by the medical implantable context. This paper first summarizes, from the point of view of the analog IC designer, the state of the art of AIMDs and their specific constraints. Then, some general design techniques for analog ICs for AIMDs are highlighted and an analog front-end for neural devices is presented to illustrate current circuit and architecture approaches.
有源植入式医疗设备(aimd)是需要超低能量操作的微系统,这是其他几种应用日益共享的特征。另一方面,aimd必须遵守医疗植入环境施加的若干具体限制。本文首先从模拟集成电路设计者的角度,总结了aimd的发展现状及其具体限制条件。然后,重点介绍了用于aimd的模拟集成电路的一些一般设计技术,并提出了用于神经器件的模拟前端,以说明当前的电路和架构方法。
{"title":"Constraints and design approaches in analog ICs forlmplantable medical devices","authors":"F. Silveira, J. Oreggioni, Pablo Castro-Lisboa","doi":"10.1109/VLSI-DAT.2015.7114545","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2015.7114545","url":null,"abstract":"Active implantable medical devices (AIMDs) are microsystems requiring ultra low energy operation, which is a characteristic increasingly shared by several other applications. On the other hand, AIMDs must comply with several specific constraints imposed by the medical implantable context. This paper first summarizes, from the point of view of the analog IC designer, the state of the art of AIMDs and their specific constraints. Then, some general design techniques for analog ICs for AIMDs are highlighted and an analog front-end for neural devices is presented to illustrate current circuit and architecture approaches.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116515635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-power gated clock tree optimization for three-dimensional integrated circuits 三维集成电路的低功耗门控时钟树优化
Pub Date : 2015-04-27 DOI: 10.1109/VLSI-DAT.2015.7114530
Yu-Chuan Chen, Chih-Cheng Hsu, Mark Po-Hung Lin
Applying clock gating in three dimensional integrated circuits (3D ICs) is essential for reducing power consumption and improving circuit reliability. However, the previous works only present algorithms for 3D clock tree synthesis. None of them address gated clock tree in 3D ICs for dynamic power reduction. In this paper, we propose the first problem formulation in the literature for 3D gated clock network optimization. We consider both flip-flop switching activities and the timing constraint of enable signal paths at clock gating cells when constructing topological gated clock trees. Based on the topological gated clock trees, a zero-skew 3D clock routing tree is then generated. Experimental results show that, compared with conventional 3D clock tree synthesis, the proposed 3D gated clock tree synthesis can achieve much less power consumption with similar number of TSVs and clock tree wirelength.
在三维集成电路(3D ic)中应用时钟门控对于降低功耗和提高电路可靠性至关重要。然而,以前的工作只提出了三维时钟树合成的算法。他们都没有解决门控时钟树在3D ic动态降低功耗。在本文中,我们提出了文献中第一个三维门控时钟网络优化问题的表述。在构造拓扑门控时钟树时,我们考虑了触发器开关活动和时钟门控单元使能信号路径的时序约束。在拓扑门控时钟树的基础上,生成零偏三维时钟路由树。实验结果表明,与传统的三维时钟树合成方法相比,本文提出的三维门控时钟树合成方法在具有相似的tsv数量和时钟树长度的情况下,功耗更低。
{"title":"Low-power gated clock tree optimization for three-dimensional integrated circuits","authors":"Yu-Chuan Chen, Chih-Cheng Hsu, Mark Po-Hung Lin","doi":"10.1109/VLSI-DAT.2015.7114530","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2015.7114530","url":null,"abstract":"Applying clock gating in three dimensional integrated circuits (3D ICs) is essential for reducing power consumption and improving circuit reliability. However, the previous works only present algorithms for 3D clock tree synthesis. None of them address gated clock tree in 3D ICs for dynamic power reduction. In this paper, we propose the first problem formulation in the literature for 3D gated clock network optimization. We consider both flip-flop switching activities and the timing constraint of enable signal paths at clock gating cells when constructing topological gated clock trees. Based on the topological gated clock trees, a zero-skew 3D clock routing tree is then generated. Experimental results show that, compared with conventional 3D clock tree synthesis, the proposed 3D gated clock tree synthesis can achieve much less power consumption with similar number of TSVs and clock tree wirelength.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133957401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Prospect of embedded non-volatile memory in the smart society 嵌入式非易失性存储器在智能社会中的应用前景
Pub Date : 2015-04-27 DOI: 10.1109/VLSI-TSA.2015.7117541
T. Yamauchi
Embedded Flash (eFlash) is widely accepted by various applications because of reducing overall costs of system development, production and inventory. Continuous evolution of eFlash such as the split-gate charge-trapping memory has satisfied the most stringent quality requirement for automotive applications. Smart society for offering a better quality of life would diversify NV memory until the establishment of emerging memories. Add-on type eFlash with a few additional masks would replace the stand-alone data flash for adaptive tuning and security over the network. Towards the possible convergence of NV-memory in smart society, emerging memories such as ReRAM and STT-MRAM are progressing. Excellent features of smaller rewrite energy with the extending rewrite cycles could contribute to the outstanding energy saving such as normally-off systems.
嵌入式Flash (eFlash)被各种应用广泛接受,因为它降低了系统开发、生产和库存的总体成本。eFlash的不断发展,如分栅电荷捕获存储器,满足了汽车应用最严格的质量要求。为了提供更好的生活质量,智能社会将使NV记忆多样化,直到新兴记忆的建立。带有一些附加掩码的附加类型eFlash将取代独立的数据flash,以实现自适应调优和网络安全性。为了实现nv存储器在智能社会中的融合,ReRAM和STT-MRAM等新兴存储器正在不断发展。更小的重写能量和更长的重写周期的优点,可以有助于突出的节能,如正常关闭系统。
{"title":"Prospect of embedded non-volatile memory in the smart society","authors":"T. Yamauchi","doi":"10.1109/VLSI-TSA.2015.7117541","DOIUrl":"https://doi.org/10.1109/VLSI-TSA.2015.7117541","url":null,"abstract":"Embedded Flash (eFlash) is widely accepted by various applications because of reducing overall costs of system development, production and inventory. Continuous evolution of eFlash such as the split-gate charge-trapping memory has satisfied the most stringent quality requirement for automotive applications. Smart society for offering a better quality of life would diversify NV memory until the establishment of emerging memories. Add-on type eFlash with a few additional masks would replace the stand-alone data flash for adaptive tuning and security over the network. Towards the possible convergence of NV-memory in smart society, emerging memories such as ReRAM and STT-MRAM are progressing. Excellent features of smaller rewrite energy with the extending rewrite cycles could contribute to the outstanding energy saving such as normally-off systems.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133959353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An OFDM-based 29.1Mbps 0.22nJ/bit body channel communication baseband transceiver 基于ofdm的29.1Mbps 0.22nJ/bit主体信道通信基带收发器
Pub Date : 2015-04-27 DOI: 10.1109/VLSI-DAT.2015.7114538
Ping-Yuan Tsai, Yuyuan Chang, S. Hsu, Chen-Yi Lee
This paper proposes an energy-efficient transceiver for body channel communication. 16-QAM OFDM is adopted to enhance the data rate and (2,1,6) convolutional code is integrated to remain the transmission reliability, where the hard-decision Viterbi Decoder gives the coding gain by 2dB. The modulator of the transceiver provides two modes - high speed mode and low power mode. In the low power mode an uneven multi-level LINC architecture is adopted. The average-power based auto gain control is applied in the receiver to ensure the transmission quality under different paste distances and different users. The chip is implemented under 90nm CMOS technology with 5.2 mm2 chip area. The data rate achieves 29.1Mbps with 6.349 mW power dissipation, resulting in 0.22nJ/b bit per energy.
提出了一种高效节能的身体信道通信收发器。采用16-QAM OFDM提高数据速率,并集成(2,1,6)卷积码保持传输可靠性,其中硬判决维特比解码器提供2dB的编码增益。收发器的调制器提供高速模式和低功耗模式两种模式。在低功耗模式下,采用不均匀多级LINC架构。接收机采用基于平均功率的自动增益控制,保证了不同粘贴距离和不同用户下的传输质量。该芯片采用90nm CMOS技术,芯片面积为5.2 mm2。数据速率达到29.1Mbps,功耗为6.349 mW,每能量为0.22nJ/b比特。
{"title":"An OFDM-based 29.1Mbps 0.22nJ/bit body channel communication baseband transceiver","authors":"Ping-Yuan Tsai, Yuyuan Chang, S. Hsu, Chen-Yi Lee","doi":"10.1109/VLSI-DAT.2015.7114538","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2015.7114538","url":null,"abstract":"This paper proposes an energy-efficient transceiver for body channel communication. 16-QAM OFDM is adopted to enhance the data rate and (2,1,6) convolutional code is integrated to remain the transmission reliability, where the hard-decision Viterbi Decoder gives the coding gain by 2dB. The modulator of the transceiver provides two modes - high speed mode and low power mode. In the low power mode an uneven multi-level LINC architecture is adopted. The average-power based auto gain control is applied in the receiver to ensure the transmission quality under different paste distances and different users. The chip is implemented under 90nm CMOS technology with 5.2 mm2 chip area. The data rate achieves 29.1Mbps with 6.349 mW power dissipation, resulting in 0.22nJ/b bit per energy.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131133318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
DC-to-5-GHz variable gain amplifier for high speed DSO 用于高速DSO的dc - 5ghz可变增益放大器
Pub Date : 2015-04-27 DOI: 10.1109/VLSI-DAT.2015.7114522
Yu-Lee Yen, C. Kuo, Ching-Feng Lee, Kevin Chen
This paper presents the design of a variable gain amplifier for the frontend circuitry of 5-GHz high-speed digital storage oscilloscopes. The design challenge includes wide bandwidth and low distortion over the frequency range from dc to 5 GHz. The Cherry-Hooper amplifier configuration is used to tackle the issue. The designed variable gain covers the specified range from -2 to 38 dB. The gain flatness carries out ripples less than 1 dB. To verify our approach, two versions of the amplifier circuits are fabricated. With four cascaded stages, the maximum gain achieves larger than 40 dB. The circuits are designed in 0.35 μm SiGe technology.
本文设计了一种用于5ghz高速数字存储示波器前端电路的可变增益放大器。设计挑战包括在直流到5ghz的频率范围内的宽带宽和低失真。Cherry-Hooper放大器配置用于解决这个问题。所设计的可变增益范围从-2到38db。增益平坦度产生的波纹小于1db。为了验证我们的方法,制作了两个版本的放大器电路。通过4级联,最大增益大于40db。电路采用0.35 μm SiGe工艺设计。
{"title":"DC-to-5-GHz variable gain amplifier for high speed DSO","authors":"Yu-Lee Yen, C. Kuo, Ching-Feng Lee, Kevin Chen","doi":"10.1109/VLSI-DAT.2015.7114522","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2015.7114522","url":null,"abstract":"This paper presents the design of a variable gain amplifier for the frontend circuitry of 5-GHz high-speed digital storage oscilloscopes. The design challenge includes wide bandwidth and low distortion over the frequency range from dc to 5 GHz. The Cherry-Hooper amplifier configuration is used to tackle the issue. The designed variable gain covers the specified range from -2 to 38 dB. The gain flatness carries out ripples less than 1 dB. To verify our approach, two versions of the amplifier circuits are fabricated. With four cascaded stages, the maximum gain achieves larger than 40 dB. The circuits are designed in 0.35 μm SiGe technology.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134278430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A hybrid built-in self-test scheme for DRAMs 一种用于dram的混合内置自检方案
Pub Date : 2015-04-27 DOI: 10.1109/VLSI-DAT.2015.7114502
Chi-Chun Yang, Jin-Fu Li, Yun-Chao Yu, Kuan-Te Wu, Chih-Yen Lo, Chao-Hsun Chen, Jenn-Shiang Lai, D. Kwai, Yung-Fa Chou
This paper proposes a hybrid BIST scheme for DRAMs. The hybrid BIST consists of a microcode-based controller to support the programmability of test algorithms and an FSM-based controller to support the in-field programmability of configuration parameters of the DRAMs. Thus, if the needed test algorithms are out of the test algorithms stored in the microcodes, only metal changing is needed to change the supported test algorithms. Simulation results show that the hybrid BIST only needs about 9553 gates to support march and non-march test algorithms for JEDEC WideIO DRAMs.
本文提出了一种用于dram的混合BIST方案。混合BIST由一个基于微码的控制器和一个基于fsm的控制器组成,前者支持测试算法的可编程性,后者支持dram配置参数的现场可编程性。因此,如果所需的测试算法不在存储在微码中的测试算法中,则只需更改金属即可更改所支持的测试算法。仿真结果表明,该混合BIST仅需要9553个栅极,即可支持JEDEC WideIO dram的行军和非行军测试算法。
{"title":"A hybrid built-in self-test scheme for DRAMs","authors":"Chi-Chun Yang, Jin-Fu Li, Yun-Chao Yu, Kuan-Te Wu, Chih-Yen Lo, Chao-Hsun Chen, Jenn-Shiang Lai, D. Kwai, Yung-Fa Chou","doi":"10.1109/VLSI-DAT.2015.7114502","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2015.7114502","url":null,"abstract":"This paper proposes a hybrid BIST scheme for DRAMs. The hybrid BIST consists of a microcode-based controller to support the programmability of test algorithms and an FSM-based controller to support the in-field programmability of configuration parameters of the DRAMs. Thus, if the needed test algorithms are out of the test algorithms stored in the microcodes, only metal changing is needed to change the supported test algorithms. Simulation results show that the hybrid BIST only needs about 9553 gates to support march and non-march test algorithms for JEDEC WideIO DRAMs.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133514018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A power-aware quad-voltage H.264 encoder chip for wireless panoramic endoscope applications 用于无线全景内窥镜应用的功率感知四电压H.264编码器芯片
Pub Date : 2015-04-27 DOI: 10.1109/VLSI-DAT.2015.7114537
An-Tia Xiao, Shiang-Ren Yang, Yuan-Hsiang Miao, Ching-Hwa Cheng, Jiun-In Guo
Voltage scaling is an efficient way to reduce dynamic power consumption for digital circuits. In this paper, a hierarchical multiple voltage (HMulti-Vdd) technology is proposed to design a power-aware H.264 intra-frame encoder for wireless panoramic endoscope applications. The proposed design adopts quad supply voltages to reduce power consumption without performance degradation. A progressive voltage difference technique is adopted in the proposed design for preventing from the penalty from using level shifters on performance and power consumption. The quad-voltage test chip has been successfully validated and has shown a 40% average reduction of power consumption, as compared to the same design using a single supply voltage.
电压缩放是降低数字电路动态功耗的有效方法。本文提出了一种分层多电压(HMulti-Vdd)技术,用于无线全景内窥镜的H.264帧内编码器的功耗感知设计。本设计采用四电源电压,在不降低性能的前提下降低功耗。为了避免电平移位器对系统性能和功耗的影响,设计中采用了渐进式电压差技术。四电压测试芯片已经成功验证,与使用单一电源电压的相同设计相比,功耗平均降低40%。
{"title":"A power-aware quad-voltage H.264 encoder chip for wireless panoramic endoscope applications","authors":"An-Tia Xiao, Shiang-Ren Yang, Yuan-Hsiang Miao, Ching-Hwa Cheng, Jiun-In Guo","doi":"10.1109/VLSI-DAT.2015.7114537","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2015.7114537","url":null,"abstract":"Voltage scaling is an efficient way to reduce dynamic power consumption for digital circuits. In this paper, a hierarchical multiple voltage (HMulti-Vdd) technology is proposed to design a power-aware H.264 intra-frame encoder for wireless panoramic endoscope applications. The proposed design adopts quad supply voltages to reduce power consumption without performance degradation. A progressive voltage difference technique is adopted in the proposed design for preventing from the penalty from using level shifters on performance and power consumption. The quad-voltage test chip has been successfully validated and has shown a 40% average reduction of power consumption, as compared to the same design using a single supply voltage.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116422789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An addressable UHF EPCGlobal Class1 Gen2 Sensor IC for wireless IOP monitoring on contact lens 用于隐形眼镜无线IOP监测的可寻址UHF EPCGlobal Class1 Gen2传感器IC
Pub Date : 2015-04-27 DOI: 10.1109/VLSI-DAT.2015.7114573
J. Chiou, S. Hsu, Cheng-Kai Kuei, Tsung-Wei Wu
In this paper, an addressable UHF EPCGlobal Class1 Gen2 sensor IC for wireless intraocular pressure (IOP) monitoring on contact lens sensor device is proposed. The proposed sensor IC consists of RFID Analog/RF Front End, capacitive sensor readout circuit, and digital processing unit. RFID Analog/RF front end is used for power management and data transmission. Sensor Readout Circuit will convert the measured capacitor value to digital format for digital processing unit. Digital processing unit is used as processor not only for sensor value processing obtained from the sensor readout circuit, but also for bidirectional communication between RFID reader and sensor IC. This sensor IC architecture combined with specific sensor and corresponding sensor readout circuit can be widely used as noninvasive biomedical sensor devices and systems. Wireless communication and sensor data transmission are implemented with UHF RFID technology, providing much flexibility and can reduce self-developed firmware effort for this architecture in the future.
本文提出了一种可寻址的UHF EPCGlobal Class1 Gen2传感器IC,用于隐形眼镜传感器设备上的无线眼压监测。该传感器IC由RFID模拟/射频前端、电容式传感器读出电路和数字处理单元组成。RFID模拟/射频前端用于电源管理和数据传输。传感器读出电路将测量到的电容值转换为数字格式,供数字处理单元使用。采用数字处理单元作为处理器,不仅可以对传感器读出电路得到的传感器值进行处理,还可以实现RFID读写器与传感器IC之间的双向通信。这种传感器IC架构结合特定的传感器和相应的传感器读出电路,可以广泛应用于无创生物医学传感器器件和系统中。无线通信和传感器数据传输使用超高频RFID技术实现,提供了很大的灵活性,并且可以减少未来为该架构自行开发固件的工作量。
{"title":"An addressable UHF EPCGlobal Class1 Gen2 Sensor IC for wireless IOP monitoring on contact lens","authors":"J. Chiou, S. Hsu, Cheng-Kai Kuei, Tsung-Wei Wu","doi":"10.1109/VLSI-DAT.2015.7114573","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2015.7114573","url":null,"abstract":"In this paper, an addressable UHF EPCGlobal Class1 Gen2 sensor IC for wireless intraocular pressure (IOP) monitoring on contact lens sensor device is proposed. The proposed sensor IC consists of RFID Analog/RF Front End, capacitive sensor readout circuit, and digital processing unit. RFID Analog/RF front end is used for power management and data transmission. Sensor Readout Circuit will convert the measured capacitor value to digital format for digital processing unit. Digital processing unit is used as processor not only for sensor value processing obtained from the sensor readout circuit, but also for bidirectional communication between RFID reader and sensor IC. This sensor IC architecture combined with specific sensor and corresponding sensor readout circuit can be widely used as noninvasive biomedical sensor devices and systems. Wireless communication and sensor data transmission are implemented with UHF RFID technology, providing much flexibility and can reduce self-developed firmware effort for this architecture in the future.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121772575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Dynamic voltage assignment for thermal-constrained task scheduler on 3D multi-core processors 三维多核处理器上热约束任务调度程序的动态电压分配
Pub Date : 2015-04-27 DOI: 10.1109/VLSI-DAT.2015.7114495
Chien-Hui Liao, Yu-Ze Lin, Charles H.-P. Wen
Thermal-constrained task scheduler for throughput optimization on 3D multi-core processors (3D-MCPs) has been studied extensively. Most task scheduler focused on thermal-aware task allocation to reduce hotspots, thereby maximizing throughput under thermal constraints. Rather than focusing on the thermal-aware task allocation as previous work does, this work targets on the voltage assignment. In this paper, dynamic voltage assignment is proposed to pre-emptively assign different voltage levels to cores frequently for reducing temperature increase in 3D-MCPs. Experimental results show that two previous task schedulers integrated with the proposed dynamic voltage assignment can lower hotspot occurrences by 62.31% and 59.09%, and improve throughput by 18.28% and 18.35%, respectively. As a result, task schedulers integrated with the proposed dynamic voltage assignment can be more effective to reduce occurrences of hotspots and optimize throughput for 3D-MCPs under thermal constraints.
三维多核处理器(3D- mcps)吞吐量优化的热约束任务调度程序已经得到了广泛的研究。大多数任务调度器关注热感知任务分配,以减少热点,从而在热约束下最大化吞吐量。与以往的工作不同,这项工作的重点是热感知任务分配,而不是电压分配。本文提出了动态电压分配方法,为减少3d - mcp的温度升高,可以先发制人地频繁地为核心分配不同的电压水平。实验结果表明,集成了动态电压分配方法的前两种任务调度程序,热点发生率分别降低了62.31%和59.09%,吞吐量分别提高了18.28%和18.35%。因此,与所提出的动态电压分配集成的任务调度程序可以更有效地减少热点的发生,并优化热约束下的3d - mcp的吞吐量。
{"title":"Dynamic voltage assignment for thermal-constrained task scheduler on 3D multi-core processors","authors":"Chien-Hui Liao, Yu-Ze Lin, Charles H.-P. Wen","doi":"10.1109/VLSI-DAT.2015.7114495","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2015.7114495","url":null,"abstract":"Thermal-constrained task scheduler for throughput optimization on 3D multi-core processors (3D-MCPs) has been studied extensively. Most task scheduler focused on thermal-aware task allocation to reduce hotspots, thereby maximizing throughput under thermal constraints. Rather than focusing on the thermal-aware task allocation as previous work does, this work targets on the voltage assignment. In this paper, dynamic voltage assignment is proposed to pre-emptively assign different voltage levels to cores frequently for reducing temperature increase in 3D-MCPs. Experimental results show that two previous task schedulers integrated with the proposed dynamic voltage assignment can lower hotspot occurrences by 62.31% and 59.09%, and improve throughput by 18.28% and 18.35%, respectively. As a result, task schedulers integrated with the proposed dynamic voltage assignment can be more effective to reduce occurrences of hotspots and optimize throughput for 3D-MCPs under thermal constraints.","PeriodicalId":369130,"journal":{"name":"VLSI Design, Automation and Test(VLSI-DAT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125885218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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VLSI Design, Automation and Test(VLSI-DAT)
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