Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272029
M. Hasanuzzama, S. Islam, L. Tolbert, M.T. Alam
An analytical model for lateral MOSFET that includes the effects of temperature variation in 4H- and 6H-SiC poly-type is presented in this paper. The model includes the effect of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact region resistances. MOSFET device behavior in 4H-SiC is also simulated and compared with 6H-SiC material system.
{"title":"Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)","authors":"M. Hasanuzzama, S. Islam, L. Tolbert, M.T. Alam","doi":"10.1109/ISDRS.2003.1272029","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272029","url":null,"abstract":"An analytical model for lateral MOSFET that includes the effects of temperature variation in 4H- and 6H-SiC poly-type is presented in this paper. The model includes the effect of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact region resistances. MOSFET device behavior in 4H-SiC is also simulated and compared with 6H-SiC material system.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126374757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272022
Y. Zeng, M. White
This paper presents, a physically based inversion layer electron mobility model which takes into account the combined effects of surface roughness and coulomb scattering the two main mechanisms limiting the electron mobility in SiC MOSFETs. The MOSFET was fabricated on an aluminium-implanted surface and the transfer characteristics are analysed, then the corresponding transconductance curves are compared.
{"title":"Electron mobility model for silicon carbide inversion layers","authors":"Y. Zeng, M. White","doi":"10.1109/ISDRS.2003.1272022","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272022","url":null,"abstract":"This paper presents, a physically based inversion layer electron mobility model which takes into account the combined effects of surface roughness and coulomb scattering the two main mechanisms limiting the electron mobility in SiC MOSFETs. The MOSFET was fabricated on an aluminium-implanted surface and the transfer characteristics are analysed, then the corresponding transconductance curves are compared.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"50 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124910446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272222
T. Vo‐Dinh, G. Griffin, A. Wintenberg, D. Stokes, D. Stratis, J. Mobley, R. Maples
Multifunctional biochip (MFB) is a unique system that allows simultaneous detection of multiple biotargets simultaneously. The MFB is an integrated multi-array biochip, which is designed by combining integrated circuit elements, an electro-optics excitation/detection system, and bioreceptor probes into a self-contained and integrated microdevice. The multi-functional capability of MFB is demonstrated using the biochip as both an antibody-based and DNA sensor. The study indicates that the biochip technology provides an important tool to warn of exposure to pathogenic agents for use in human health protection and homeland defense.
{"title":"Multi-functional biochip for biological agent detection","authors":"T. Vo‐Dinh, G. Griffin, A. Wintenberg, D. Stokes, D. Stratis, J. Mobley, R. Maples","doi":"10.1109/ISDRS.2003.1272222","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272222","url":null,"abstract":"Multifunctional biochip (MFB) is a unique system that allows simultaneous detection of multiple biotargets simultaneously. The MFB is an integrated multi-array biochip, which is designed by combining integrated circuit elements, an electro-optics excitation/detection system, and bioreceptor probes into a self-contained and integrated microdevice. The multi-functional capability of MFB is demonstrated using the biochip as both an antibody-based and DNA sensor. The study indicates that the biochip technology provides an important tool to warn of exposure to pathogenic agents for use in human health protection and homeland defense.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124118470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1271976
D. Paul, S. Lynch, P. Townsend, Z. Ikonić, R. Kelsall, P. Harrison, S. Liew, D. Norris, A. Cullis, J. Zhang, H. Gamble, W. Tribe, D. D. Arnone
In this paper, we demonstrated electroluminescence in strain-symmetrised structures with up to 600 active periods. The wafer also demonstrates for the first time growth of a strain symmetrised Si/SiGe superlattice on top of a silicon-on-silicide wafer where the silicide is designed to be a bottom reflector in waveguide cavity. TEM images of the structure demonstrated excellent planarity and uniformity of the active periods.
{"title":"Si/SiGe terahertz quantum cascade emitters","authors":"D. Paul, S. Lynch, P. Townsend, Z. Ikonić, R. Kelsall, P. Harrison, S. Liew, D. Norris, A. Cullis, J. Zhang, H. Gamble, W. Tribe, D. D. Arnone","doi":"10.1109/ISDRS.2003.1271976","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1271976","url":null,"abstract":"In this paper, we demonstrated electroluminescence in strain-symmetrised structures with up to 600 active periods. The wafer also demonstrates for the first time growth of a strain symmetrised Si/SiGe superlattice on top of a silicon-on-silicide wafer where the silicide is designed to be a bottom reflector in waveguide cavity. TEM images of the structure demonstrated excellent planarity and uniformity of the active periods.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122592725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272056
P. Balaraman, K. Roenker
Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb heterojunction bipolar transistors (HBTs). GaAsSb lattice matched to InP has an energy bandgap (0.72 eV) that is similar to that of InGaAs (0.75 eV) so that Sb-based HBTs have been proposed as a replacement for InGaAs-based HBTs. In particular, the conduction band lineup is more favorable at the base-collector, which makes the GaAsSb-based HBTs especially attractive for double heterojunction bipolar transistors (DHBTs) where higher breakdown voltages are desired. In this work, the results of device modeling will be compared initially with recent experimental reports to validate the modeling approach. Subsequently, the design and operation of the devices will be examined to investigate the factors controlling device performance in order to facilitate improvements in device design.
{"title":"Simulation study of InP/GaAsSb double heterojunction bipolar transistors","authors":"P. Balaraman, K. Roenker","doi":"10.1109/ISDRS.2003.1272056","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272056","url":null,"abstract":"Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb heterojunction bipolar transistors (HBTs). GaAsSb lattice matched to InP has an energy bandgap (0.72 eV) that is similar to that of InGaAs (0.75 eV) so that Sb-based HBTs have been proposed as a replacement for InGaAs-based HBTs. In particular, the conduction band lineup is more favorable at the base-collector, which makes the GaAsSb-based HBTs especially attractive for double heterojunction bipolar transistors (DHBTs) where higher breakdown voltages are desired. In this work, the results of device modeling will be compared initially with recent experimental reports to validate the modeling approach. Subsequently, the design and operation of the devices will be examined to investigate the factors controlling device performance in order to facilitate improvements in device design.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121706687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272106
S. Wolf
This paper describes about the discovery of the giant magnetoresistance effect in magnetic multilayers in 1998 and the subsequent development of sensors based on it and the introduction of a new nonvolatile magnetic memory based on a spin dependent tunneling structure that potentially can be a universal replacement for existing semiconductor memories both volatile and nonvolatile. The development of the new field of spin electronics or spintronics is also discussed.
{"title":"A new spin on electronics - spintronics","authors":"S. Wolf","doi":"10.1109/ISDRS.2003.1272106","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272106","url":null,"abstract":"This paper describes about the discovery of the giant magnetoresistance effect in magnetic multilayers in 1998 and the subsequent development of sensors based on it and the introduction of a new nonvolatile magnetic memory based on a spin dependent tunneling structure that potentially can be a universal replacement for existing semiconductor memories both volatile and nonvolatile. The development of the new field of spin electronics or spintronics is also discussed.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124771914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272134
E. Zhao, A. Salman, J. Zhang, N. Subba, J. Chan, A. Marathe, S. Beebe, K. Taylor
In this paper we have discussed various reliability issues in developing cutting edge SOI technologies with ultra-thin gate dielectrics such as DC-HCI (hot carrier injection), TDDB, NBTI, and ESD. Floating body and body tied structures on partially depleted SOI substrate are investigated. The correlation between the AC and DC HCI degradation are compared and found to have a larger voltage scaling factor that can be explained by self-heating. The reliability of the gate dielectric is evaluated by time dependent dielectric breakdown (TDDB). The results imply that the addition of a T-gate shortens gate dielectric lifetime, this is because part of the gate dielectric is biased in accumulation and thus has shorter lifetime. Negative bias temperature instability (NBTI) lifetime improves with higher nitrogen concentration in the GOX but it is found that it can cause more positive charge generation during NBTI stress. Electrostatic discharge (ESD) is the major reliability issue, ESD failure mechanism is thermal runaway that is due to the increased self-heating. A typical protection of the increased self-heating is the lateral diode. Change in design of the lateral diode to floating gate electrode enhanced the charged device model (CDM) protection capability.
{"title":"Reliability challenges of high performance PD SOI CMOS with ultra-thin gate dielectrics","authors":"E. Zhao, A. Salman, J. Zhang, N. Subba, J. Chan, A. Marathe, S. Beebe, K. Taylor","doi":"10.1109/ISDRS.2003.1272134","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272134","url":null,"abstract":"In this paper we have discussed various reliability issues in developing cutting edge SOI technologies with ultra-thin gate dielectrics such as DC-HCI (hot carrier injection), TDDB, NBTI, and ESD. Floating body and body tied structures on partially depleted SOI substrate are investigated. The correlation between the AC and DC HCI degradation are compared and found to have a larger voltage scaling factor that can be explained by self-heating. The reliability of the gate dielectric is evaluated by time dependent dielectric breakdown (TDDB). The results imply that the addition of a T-gate shortens gate dielectric lifetime, this is because part of the gate dielectric is biased in accumulation and thus has shorter lifetime. Negative bias temperature instability (NBTI) lifetime improves with higher nitrogen concentration in the GOX but it is found that it can cause more positive charge generation during NBTI stress. Electrostatic discharge (ESD) is the major reliability issue, ESD failure mechanism is thermal runaway that is due to the increased self-heating. A typical protection of the increased self-heating is the lateral diode. Change in design of the lateral diode to floating gate electrode enhanced the charged device model (CDM) protection capability.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125013594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1272235
Gregory B. Tait, D. B. Ameen
A thin barrier-enhancement region on quantum well InGaAs/InAlAs MSM photodetector is incorporated in between the two-dimensional quantum channel and the three-dimensional metal contact. One-dimensional and uniform strong electric field throughout the transport direction in the quantum channel is obtained by contacting this quantum channel laterally. This region is modeled by a quantum mechanical boundary condition in the numerical carrier transport simulation. Effects of this thin boundary on InGaAs/InAlAs MSM photodetector dark and transient current responses are presented.
{"title":"Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing","authors":"Gregory B. Tait, D. B. Ameen","doi":"10.1109/ISDRS.2003.1272235","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272235","url":null,"abstract":"A thin barrier-enhancement region on quantum well InGaAs/InAlAs MSM photodetector is incorporated in between the two-dimensional quantum channel and the three-dimensional metal contact. One-dimensional and uniform strong electric field throughout the transport direction in the quantum channel is obtained by contacting this quantum channel laterally. This region is modeled by a quantum mechanical boundary condition in the numerical carrier transport simulation. Effects of this thin boundary on InGaAs/InAlAs MSM photodetector dark and transient current responses are presented.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125014219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1271981
S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, S. De Gendt, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao, M. Heyns
In this paper, we study the growth properties of HfO/sub 2/ on Ge by MOCVD, using TDEAH and O/sub 2/ precursors and compare the results to similar layers deposited on silicon substrates. Analysis techniques include ellipsometry, Rutherford Backscattering Spectra (RBS), transmission electron microscopy (TEM),X-ray diffraction (XRD), and time of flight secondary ion mass spectroscopy (TOFSIMS).
{"title":"Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVD","authors":"S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, S. De Gendt, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao, M. Heyns","doi":"10.1109/ISDRS.2003.1271981","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1271981","url":null,"abstract":"In this paper, we study the growth properties of HfO/sub 2/ on Ge by MOCVD, using TDEAH and O/sub 2/ precursors and compare the results to similar layers deposited on silicon substrates. Analysis techniques include ellipsometry, Rutherford Backscattering Spectra (RBS), transmission electron microscopy (TEM),X-ray diffraction (XRD), and time of flight secondary ion mass spectroscopy (TOFSIMS).","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131474050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-12-10DOI: 10.1109/ISDRS.2003.1271993
P. Abele, I. Kallfass, H. Schumacher, M. Zeuner, T. Muller, T. Hackbarth, U. Konig, D. Chrastina, H. von Kanel
Two distributed amplifiers using n-type SiGe MODFETs as active devices and a coplanar waveguide topology on high resistivity silicon substrate were fabricated. Each of the amplifiers consist of six identical stages, one using a cascode transistor configuration and the other a common source transistor configuration. The distributed amplifier in cascode configuration has an increased bandwidth of 40 GHz and a gain of 4 dB with a ripple of /spl plusmn/0.4 dB. The other amplifier has a bandwidth of 32 GHz and a gain of 5.5 dB with a ripple of /spl plusmn/0.8 dB.
{"title":"32 GHz and 40 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs","authors":"P. Abele, I. Kallfass, H. Schumacher, M. Zeuner, T. Muller, T. Hackbarth, U. Konig, D. Chrastina, H. von Kanel","doi":"10.1109/ISDRS.2003.1271993","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1271993","url":null,"abstract":"Two distributed amplifiers using n-type SiGe MODFETs as active devices and a coplanar waveguide topology on high resistivity silicon substrate were fabricated. Each of the amplifiers consist of six identical stages, one using a cascode transistor configuration and the other a common source transistor configuration. The distributed amplifier in cascode configuration has an increased bandwidth of 40 GHz and a gain of 4 dB with a ripple of /spl plusmn/0.4 dB. The other amplifier has a bandwidth of 32 GHz and a gain of 5.5 dB with a ripple of /spl plusmn/0.8 dB.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125467903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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