Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607891
W. Monch, P. Waibel, H. Zappe
Polymer swelling is studied as a novel method for bandgap tuning of photonic crystals (PCs). Crosslinked polymers swell in the presence of solvents, thereby increasing their volume and changing their refractive index. Consequently, the lattice constant and the refractive index of a polymer PC is modified by swelling and leads to a shift of the optical bandgap.We present experimental studies of swelling of one-dimensional PCs and theoretical calculations of swelling of three-dimensional PCs. It is shown that the frequencies of the optical bandgap of a polymer PC is shifted by about 10% when exposed to a solvent-nitrogen gas mixture at 80% of the solvent saturation pressure.
{"title":"Bandgap tuning of photonic crystals by polymer swelling","authors":"W. Monch, P. Waibel, H. Zappe","doi":"10.1109/OMEMS.2008.4607891","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607891","url":null,"abstract":"Polymer swelling is studied as a novel method for bandgap tuning of photonic crystals (PCs). Crosslinked polymers swell in the presence of solvents, thereby increasing their volume and changing their refractive index. Consequently, the lattice constant and the refractive index of a polymer PC is modified by swelling and leads to a shift of the optical bandgap.We present experimental studies of swelling of one-dimensional PCs and theoretical calculations of swelling of three-dimensional PCs. It is shown that the frequencies of the optical bandgap of a polymer PC is shifted by about 10% when exposed to a solvent-nitrogen gas mixture at 80% of the solvent saturation pressure.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114948913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607876
H. Morii, F. Oohira, M. Sasaki, T. Ochi, A. Yuzuriha
A novel conductive pattern forming method on the vertical wall using a resist spray coating and an angled exposure technologies is proposed. This method makes it possible to decrease the chip package size. The spray coating and the angled exposure technologies enable the uniform resist coating and the patterning the resist on the vertical wall of 600 mum height. Then a conductive pattern layers are sputtered and electroless plated. As the result, the conductive patterns of 200 mum width and 300 mum spacing is successfully formed on the vertical walls.
{"title":"Conductive pattern forming method on vertical wall using spray coating and angled exposure technologies","authors":"H. Morii, F. Oohira, M. Sasaki, T. Ochi, A. Yuzuriha","doi":"10.1109/OMEMS.2008.4607876","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607876","url":null,"abstract":"A novel conductive pattern forming method on the vertical wall using a resist spray coating and an angled exposure technologies is proposed. This method makes it possible to decrease the chip package size. The spray coating and the angled exposure technologies enable the uniform resist coating and the patterning the resist on the vertical wall of 600 mum height. Then a conductive pattern layers are sputtered and electroless plated. As the result, the conductive patterns of 200 mum width and 300 mum spacing is successfully formed on the vertical walls.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114730055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607834
V. Milanovic, W. K. Lo
We demonstrate real-time fast-motion tracking of an object in a 3D volume, while obtaining its precise XYZ co-ordinates. Two separate scanning MEMS micromirror sub-systems track the object in a 20 kHz closed-loop. A demonstration system capable of tracking full-speed human hand motion provides position information at up to 5 m distance with 16-bit precision, or < = 20 mum precision on the X and Y axes (up/down, left/right,) and precision on the depth (Z-axis) from 10 mum to 1.5 mm, depending on distance.
{"title":"Fast and high-precision 3D tracking and position measurement with MEMS micromirrors","authors":"V. Milanovic, W. K. Lo","doi":"10.1109/OMEMS.2008.4607834","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607834","url":null,"abstract":"We demonstrate real-time fast-motion tracking of an object in a 3D volume, while obtaining its precise XYZ co-ordinates. Two separate scanning MEMS micromirror sub-systems track the object in a 20 kHz closed-loop. A demonstration system capable of tracking full-speed human hand motion provides position information at up to 5 m distance with 16-bit precision, or < = 20 mum precision on the X and Y axes (up/down, left/right,) and precision on the depth (Z-axis) from 10 mum to 1.5 mm, depending on distance.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122115902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607892
H. Sameshima, M. Wakui, R. Ito, F. Hu, K. Hane
We study the growth of GaN crystal on Si substrate by molecular beam epitaxy (MBE), in order to integrate GaN light source and MEMS monolithically Since the lattice constant of HfN is close to that of GaN (only 0.35% mismatch), the crystal growth of GaN on HfN film is superior. On the other hand, HfO2 film is a good candidate for waveguide, dielectric and sacrificial layer. In this study, HfO2 film is surface-nitrified by a rf nitrogen plasma source of MBE to generate HfN layer. The morphology of the grown GaN crystal was better on the nitrified HfO2 layer. The photoluminescence (PL) efficiency of GaN quantum well grown on the nitrified HfO2 layer was better than that on Si substrate. As a simple hybrid lighting device structure, GaN grating on Si substrate was fabricated and the PL intensity from GaN diffraction grating was measured.
{"title":"Formation of a nitrified hafnium oxide buffer layer on silicon substrate and GaN quantum well crystal growth for GaN-Si hybrid optical MEMS","authors":"H. Sameshima, M. Wakui, R. Ito, F. Hu, K. Hane","doi":"10.1109/OMEMS.2008.4607892","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607892","url":null,"abstract":"We study the growth of GaN crystal on Si substrate by molecular beam epitaxy (MBE), in order to integrate GaN light source and MEMS monolithically Since the lattice constant of HfN is close to that of GaN (only 0.35% mismatch), the crystal growth of GaN on HfN film is superior. On the other hand, HfO2 film is a good candidate for waveguide, dielectric and sacrificial layer. In this study, HfO2 film is surface-nitrified by a rf nitrogen plasma source of MBE to generate HfN layer. The morphology of the grown GaN crystal was better on the nitrified HfO2 layer. The photoluminescence (PL) efficiency of GaN quantum well grown on the nitrified HfO2 layer was better than that on Si substrate. As a simple hybrid lighting device structure, GaN grating on Si substrate was fabricated and the PL intensity from GaN diffraction grating was measured.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124645711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607868
A. Arslan, Ç. Ataman, S. Holmstrom, K. Hedsten, H. Rahmi Seren, H. Urey, P. Enoksson
An electrostatic large clear-aperture in-plane scanner with a novel actuation principle is presented for fast and large stroke scanning applications 9 mum resonant deflection at 11.51 KHz with 100 Vpp excitation is observed.
{"title":"Mechanically coupled comb drive MEMS stages","authors":"A. Arslan, Ç. Ataman, S. Holmstrom, K. Hedsten, H. Rahmi Seren, H. Urey, P. Enoksson","doi":"10.1109/OMEMS.2008.4607868","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607868","url":null,"abstract":"An electrostatic large clear-aperture in-plane scanner with a novel actuation principle is presented for fast and large stroke scanning applications 9 mum resonant deflection at 11.51 KHz with 100 Vpp excitation is observed.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129712457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607860
S. Hung, S. Shiu, C. Chao, Ching-Fuh Lin
In this paper, a novel technique using the homogenized KrF excimer laser reformation is presented as an alternative method for fabricating Si spheres.
本文提出了一种利用均匀化KrF准分子激光重组制备硅球的新方法。
{"title":"Fabrication of sub-micrometer Si spheres with atomic-scale surface smoothness using homogenized KrF excimer laser reformation system","authors":"S. Hung, S. Shiu, C. Chao, Ching-Fuh Lin","doi":"10.1109/OMEMS.2008.4607860","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607860","url":null,"abstract":"In this paper, a novel technique using the homogenized KrF excimer laser reformation is presented as an alternative method for fabricating Si spheres.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125686917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607831
J. Milne, J. Dell, A. Keating, L. Schuler, L. Faraone
Wide spectral tuning from 1620 nm to 2425 nm has been achieved in a MEMS-based tunable Fabry-Perot filter. Fixed-fixed beam actuators were used to extend the tuning beyond the inherent limit of a parallel plate actuator.
{"title":"Widely tunable Fabry-Perot optical filter using fixed-fixed beam actuators","authors":"J. Milne, J. Dell, A. Keating, L. Schuler, L. Faraone","doi":"10.1109/OMEMS.2008.4607831","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607831","url":null,"abstract":"Wide spectral tuning from 1620 nm to 2425 nm has been achieved in a MEMS-based tunable Fabry-Perot filter. Fixed-fixed beam actuators were used to extend the tuning beyond the inherent limit of a parallel plate actuator.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114265358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607863
E. H. Khoo, S. Ho, I. Ahmed, E. Li, Y. Huang
This paper reports on the modeling of the semiconductor photonic devices using 3D DTEQM-FDTD. The model includes the physics of Pauli Exclusion principle, Fermi-Dirac thermalization and state filling to describe the complex electron dynamics in semiconductor media to realize the full potential of FDTD. The carrier intraband and interband transition dynamics, energy band filling and thermal equilibrium are demonstrated in the model. The DTEQM-FDTD model includes the essential physics of complex dynamical media and yet computational efficient. It is applicable to a wide range of atomic and molecular media by applying the appropriate rate equations and energy level structure.
{"title":"3D modeling of photonic devices using dynamic thermal electron quantum medium finite-different time-domain (DTEQM-FDTD) method","authors":"E. H. Khoo, S. Ho, I. Ahmed, E. Li, Y. Huang","doi":"10.1109/OMEMS.2008.4607863","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607863","url":null,"abstract":"This paper reports on the modeling of the semiconductor photonic devices using 3D DTEQM-FDTD. The model includes the physics of Pauli Exclusion principle, Fermi-Dirac thermalization and state filling to describe the complex electron dynamics in semiconductor media to realize the full potential of FDTD. The carrier intraband and interband transition dynamics, energy band filling and thermal equilibrium are demonstrated in the model. The DTEQM-FDTD model includes the essential physics of complex dynamical media and yet computational efficient. It is applicable to a wide range of atomic and molecular media by applying the appropriate rate equations and energy level structure.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123050253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607888
John X.J. Zhang, Kazunori Hoshino, A. Gopal
We fabricated nanoscale light emitting diodes (NANO-LED) at the tip of silicon probes. Simultaneous optical and topographical images were acquired using the probes with the nano-LED in a standard near-field scanning optical microscope.
{"title":"Near-field scanning nanophotonic microscopy","authors":"John X.J. Zhang, Kazunori Hoshino, A. Gopal","doi":"10.1109/OMEMS.2008.4607888","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607888","url":null,"abstract":"We fabricated nanoscale light emitting diodes (NANO-LED) at the tip of silicon probes. Simultaneous optical and topographical images were acquired using the probes with the nano-LED in a standard near-field scanning optical microscope.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"11 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121219103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607850
I. Mitsuishi, Y. Ezoe, M. Koshiishi, M. Mita, Y. Maeda, N. Yamasaki, K. Mitsuda, T. Shirata, T. Hayashi, T. Takano, R. Maeda
X-ray reflectivity of an ultra light-weight X-ray optic using MEMS technologies was measured in two different energies (0.28 keV and 1.49 keV). The obtained reflectivities can be understood by considering the mirror surface structures.
{"title":"Evaluation of X-ray reflectivity of a MEMS X-ray optic","authors":"I. Mitsuishi, Y. Ezoe, M. Koshiishi, M. Mita, Y. Maeda, N. Yamasaki, K. Mitsuda, T. Shirata, T. Hayashi, T. Takano, R. Maeda","doi":"10.1109/OMEMS.2008.4607850","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607850","url":null,"abstract":"X-ray reflectivity of an ultra light-weight X-ray optic using MEMS technologies was measured in two different energies (0.28 keV and 1.49 keV). The obtained reflectivities can be understood by considering the mirror surface structures.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"86 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128855754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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