Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607801
Aaron T. Ohta, Steven L. Neale, H. Hsu, J. Valley, Ming C. Wu
We report on the parallel manipulation and assembly of nanowires using paired virtual optical tips projected on lateral-field optoelectronic tweezers. Precise position and angular control has been demonstrated on four 80-nm-diameter silver nanowires.
{"title":"Parallel assembly of nanowires using lateral-field optoelectronic tweezers","authors":"Aaron T. Ohta, Steven L. Neale, H. Hsu, J. Valley, Ming C. Wu","doi":"10.1109/OMEMS.2008.4607801","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607801","url":null,"abstract":"We report on the parallel manipulation and assembly of nanowires using paired virtual optical tips projected on lateral-field optoelectronic tweezers. Precise position and angular control has been demonstrated on four 80-nm-diameter silver nanowires.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126648891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607818
K. Vahala
Summary form only given. In this paper, we review recent demonstrations of both mechanical amplification and cooling by radiation pressure forces in micron-scale toroidal resonators and also in silicon cantilever-based resonators. These devices contain high-Q optical modes in coexistence with high-Q mechanical modes.
{"title":"Cooling and amplifying micro-mechanical motion with light","authors":"K. Vahala","doi":"10.1109/OMEMS.2008.4607818","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607818","url":null,"abstract":"Summary form only given. In this paper, we review recent demonstrations of both mechanical amplification and cooling by radiation pressure forces in micron-scale toroidal resonators and also in silicon cantilever-based resonators. These devices contain high-Q optical modes in coexistence with high-Q mechanical modes.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128192838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607837
T. Sandner, M. Wildenhain, T. Klose, H. Schenk, S. Schwarzer, V. Hinkov, H. Hofler, H. Wolfelschneider
We present a system concept for a scanning laser radar employing a newly developed MEMS mirror array. The array solution permits large reception apertures while preserving outstanding reliability, high scanning speed, compact size and small system weight. We show first results using a single-mirror prototype.
{"title":"3D imaging using resonant large-aperture MEMS mirror arrays and laser distance measurement","authors":"T. Sandner, M. Wildenhain, T. Klose, H. Schenk, S. Schwarzer, V. Hinkov, H. Hofler, H. Wolfelschneider","doi":"10.1109/OMEMS.2008.4607837","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607837","url":null,"abstract":"We present a system concept for a scanning laser radar employing a newly developed MEMS mirror array. The array solution permits large reception apertures while preserving outstanding reliability, high scanning speed, compact size and small system weight. We show first results using a single-mirror prototype.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117047887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607833
Y. Ohira, A. Checkovskiy, T. Yamanoi, T. Endo, H. Fujita, H. Toshiyoshi
This paper reports a design and fabrication technique of high-power handling MEMS (micro electro mechanical systems) optical scanner for laser 3D image display application. The MEMS scanner is designed to control the reflection of high-power YAG-laser beam of 5 W (0.5 mW/pulse) by the optomechanical combination of a dielectric-film coated mirror cube and an electrostatic MEMS scanner platform.
{"title":"A high-power handling MEMS optical scanner for display applications","authors":"Y. Ohira, A. Checkovskiy, T. Yamanoi, T. Endo, H. Fujita, H. Toshiyoshi","doi":"10.1109/OMEMS.2008.4607833","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607833","url":null,"abstract":"This paper reports a design and fabrication technique of high-power handling MEMS (micro electro mechanical systems) optical scanner for laser 3D image display application. The MEMS scanner is designed to control the reflection of high-power YAG-laser beam of 5 W (0.5 mW/pulse) by the optomechanical combination of a dielectric-film coated mirror cube and an electrostatic MEMS scanner platform.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"314 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122863999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607890
J. D. Makowski, M. Saarinen, C. Palmstrøm, J. Talghader
This work investigates the effect of the quantum well interface on the photoluminescence (PL) spectrum. The samples consist of an MBE (molecular beam epitaxy) grown InP/InGaAs heterostructure with two sets of a multiquantum well structure (MQW) and a single quantum well (SQW) symmetrically placed around a sacrificial layer. All are attached to a common anchor where the heterostructure is still in its pristine state; only the bottom heterostructure is present in the exposed well region next to the cantilevers. The transfer matrix method yields transition wavelengths for the SQW in the unprocessed buried case and exposed case. The electron states in the MQW structure form a mini band at the top of the quantum well and are not affected by the nature of the interface.
{"title":"Impact of an air barrier on the electron states of etch-released quantum heterostructures","authors":"J. D. Makowski, M. Saarinen, C. Palmstrøm, J. Talghader","doi":"10.1109/OMEMS.2008.4607890","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607890","url":null,"abstract":"This work investigates the effect of the quantum well interface on the photoluminescence (PL) spectrum. The samples consist of an MBE (molecular beam epitaxy) grown InP/InGaAs heterostructure with two sets of a multiquantum well structure (MQW) and a single quantum well (SQW) symmetrically placed around a sacrificial layer. All are attached to a common anchor where the heterostructure is still in its pristine state; only the bottom heterostructure is present in the exposed well region next to the cantilevers. The transfer matrix method yields transition wavelengths for the SQW in the unprocessed buried case and exposed case. The electron states in the MQW structure form a mini band at the top of the quantum well and are not affected by the nature of the interface.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127590643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607841
I. Jung, S.B. Mallick, O. Solgaard
This paper describes large area (500 mum - 500 mum) monolithic 2-D photonic crystals (PC) for applications as high-reflectivity, broad-band mirrors in the near-IR (infra-red) spectrum. These large PC mirrors were patterned using an ASM-L i-line stepper to achieve minimum feature sizes of less than 100 nm. The reflectivity spectrum of the mirrors show that the high reflectivity (>90%) bands can be shifted in wavelength by varying the hole sizes of the photonic crystal to cover the 400 nm near-IR band from 1250 nm-1650 nm.
本文介绍了大面积(500 μ m ~ 500 μ m)单片二维光子晶体(PC)，用于近红外光谱的高反射率、宽带反射镜。这些大型PC反射镜使用ASM-L直线步进器进行图像化，以实现小于100纳米的最小特征尺寸。反射镜的反射率光谱表明，通过改变光子晶体的孔尺寸，高反射率(>90%)波段可以在波长上移位，覆盖1250 nm-1650 nm的400 nm近红外波段。
{"title":"Large-area monolithic photonic crystal mirrors with high reflectivity in the 1250–1650nm band patterned by optical lithography","authors":"I. Jung, S.B. Mallick, O. Solgaard","doi":"10.1109/OMEMS.2008.4607841","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607841","url":null,"abstract":"This paper describes large area (500 mum - 500 mum) monolithic 2-D photonic crystals (PC) for applications as high-reflectivity, broad-band mirrors in the near-IR (infra-red) spectrum. These large PC mirrors were patterned using an ASM-L i-line stepper to achieve minimum feature sizes of less than 100 nm. The reflectivity spectrum of the mirrors show that the high reflectivity (>90%) bands can be shifted in wavelength by varying the hole sizes of the photonic crystal to cover the 400 nm near-IR band from 1250 nm-1650 nm.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121284966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607884
L. Gitelman, Z. Gutman, S. Bar-Lev, S. Stolyarova, Y. Nemirovsky
The novel concept of thermally isolated CMOS-SOI-MEMS transistor serving as IR detector (TMOS) is presented and characterized, showing high potential for thermal imaging, allowing long integration time because of negligible self heating.
{"title":"CMOS-SOI-MEMS transistor (TMOS) for infrared imaging","authors":"L. Gitelman, Z. Gutman, S. Bar-Lev, S. Stolyarova, Y. Nemirovsky","doi":"10.1109/OMEMS.2008.4607884","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607884","url":null,"abstract":"The novel concept of thermally isolated CMOS-SOI-MEMS transistor serving as IR detector (TMOS) is presented and characterized, showing high potential for thermal imaging, allowing long integration time because of negligible self heating.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116235778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607817
S. Waldis, S. Weber, W. Noell, J. Extermann, D. Kiselev, L. Bonacina, J. Wolf, N. D. de Rooij
We are fabricating a bulk-micromachined micromirror device for laser pulse shaping applications on femtosecond time scales. An array of micromirrors is used to individually retard or diminish certain laser frequencies spanning from the UV to the near-infrared. The individual mirrors are fixed by two springs on either side and can be tilted (amplitude modulation) or moved out-of plane (phase modulation) using asymmetrical or symmetrical vertical comb drives, respectively.
{"title":"Large linear micromirror array for UV femtosecond laser pulse shaping","authors":"S. Waldis, S. Weber, W. Noell, J. Extermann, D. Kiselev, L. Bonacina, J. Wolf, N. D. de Rooij","doi":"10.1109/OMEMS.2008.4607817","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607817","url":null,"abstract":"We are fabricating a bulk-micromachined micromirror device for laser pulse shaping applications on femtosecond time scales. An array of micromirrors is used to individually retard or diminish certain laser frequencies spanning from the UV to the near-infrared. The individual mirrors are fixed by two springs on either side and can be tilted (amplitude modulation) or moved out-of plane (phase modulation) using asymmetrical or symmetrical vertical comb drives, respectively.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125731534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607825
D. Dickensheets, H. Herzig, W. Nakagawa, K. Suter, U. Staufer
Sub-wavelength two-dimensional gratings are formed by etching holes into silicon using DRIE followed by thermal oxidation. Smoothly graded effective index blazing is possible using uniform holes on a variable grating pitch, exhibiting minimal etch lag.
{"title":"Nanostructured effective-index micro-optical devices based on blazed 2-D sub-wavelength gratings with uniform features on a variable-pitch","authors":"D. Dickensheets, H. Herzig, W. Nakagawa, K. Suter, U. Staufer","doi":"10.1109/OMEMS.2008.4607825","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607825","url":null,"abstract":"Sub-wavelength two-dimensional gratings are formed by etching holes into silicon using DRIE followed by thermal oxidation. Smoothly graded effective index blazing is possible using uniform holes on a variable grating pitch, exhibiting minimal etch lag.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125753143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-08-26DOI: 10.1109/OMEMS.2008.4607813
Wyatt O. Davis, Randy Sprague, Josh Miller Microvision
A pico-projector based on scanned 3-color laser light has been developed. The scanning element is a dual-axis MEMS scanning mirror that produces WVGA display resolution. The laser light sources are red and blue laser diodes and a second harmonic green laser. Use of a MEMS and laser light sources leads to a small volume and a thickness of 7mm, enabling the use of the projector system as a component embedded into portable consumer electronics.
{"title":"MEMS-based pico projector display","authors":"Wyatt O. Davis, Randy Sprague, Josh Miller Microvision","doi":"10.1109/OMEMS.2008.4607813","DOIUrl":"https://doi.org/10.1109/OMEMS.2008.4607813","url":null,"abstract":"A pico-projector based on scanned 3-color laser light has been developed. The scanning element is a dual-axis MEMS scanning mirror that produces WVGA display resolution. The laser light sources are red and blue laser diodes and a second harmonic green laser. Use of a MEMS and laser light sources leads to a small volume and a thickness of 7mm, enabling the use of the projector system as a component embedded into portable consumer electronics.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128071592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：