Pub Date : 2023-01-25DOI: 10.1088/2631-7990/acb626
Seo Ju Kim, Deokyoon Woo, Donguk Kim, Tae-kyeong Lee, Jaeyeob Lee, Wonyoung Lee
Sluggish oxygen reduction reaction (ORR) kinetics are a major obstacle to developing intermediate-temperature solid-oxide fuel cells (IT-SOFCs). In particular, engineering the anion defect concentration at an interface between the cathode and electrolyte is important for facilitating ORR kinetics and hence improving the electrochemical performance. We developed the yttria-stabilized zirconia (YSZ) nanofiber (NF)-based composite cathode, where the oxygen vacancy concentration is controlled by varying the dopant cation (Y2O3) ratio in the YSZ NFs. The composite cathode with the optimized oxygen vacancy concentration exhibits maximum power densities of 2.66 and 1.51 W cm−2 at 700 and 600 °C, respectively, with excellent thermal stability at 700 °C over 500 h under 1.0 A cm−2. Electrochemical impedance spectroscopy and distribution of relaxation time analysis revealed that the high oxygen vacancy concentration in the NF-based scaffold facilitates the charge transfer and incorporation reaction occurred at the interfaces between the cathode and electrolyte. Our results demonstrate the high feasibility and potential of interface engineering for achieving IT-SOFCs with higher performance and stability.
缓慢的氧还原反应(ORR)动力学是发展中温固体氧化物燃料电池(it - sofc)的主要障碍。特别是，在阴极和电解质之间的界面上设计阴离子缺陷浓度对于促进ORR动力学从而提高电化学性能非常重要。我们开发了钇稳定氧化锆(YSZ)纳米纤维(NF)基复合阴极，其中氧空位浓度通过改变YSZ纳米纤维中掺杂阳离子(Y2O3)的比例来控制。优化后的氧空位浓度复合阴极在700℃和600℃时的最大功率密度分别为2.66和1.51 W cm−2，在1.0 A cm−2下，在700℃、500 h内具有优异的热稳定性。电化学阻抗谱和弛豫时间分布分析表明，高氧空位浓度有利于阴极与电解质界面发生电荷转移和掺入反应。我们的研究结果表明，界面工程在实现具有更高性能和稳定性的it - sofc方面具有很高的可行性和潜力。
{"title":"Interface engineering of an electrospun nanofiber-based composite cathode for intermediate-temperature solid oxide fuel cells","authors":"Seo Ju Kim, Deokyoon Woo, Donguk Kim, Tae-kyeong Lee, Jaeyeob Lee, Wonyoung Lee","doi":"10.1088/2631-7990/acb626","DOIUrl":"https://doi.org/10.1088/2631-7990/acb626","url":null,"abstract":"Sluggish oxygen reduction reaction (ORR) kinetics are a major obstacle to developing intermediate-temperature solid-oxide fuel cells (IT-SOFCs). In particular, engineering the anion defect concentration at an interface between the cathode and electrolyte is important for facilitating ORR kinetics and hence improving the electrochemical performance. We developed the yttria-stabilized zirconia (YSZ) nanofiber (NF)-based composite cathode, where the oxygen vacancy concentration is controlled by varying the dopant cation (Y2O3) ratio in the YSZ NFs. The composite cathode with the optimized oxygen vacancy concentration exhibits maximum power densities of 2.66 and 1.51 W cm−2 at 700 and 600 °C, respectively, with excellent thermal stability at 700 °C over 500 h under 1.0 A cm−2. Electrochemical impedance spectroscopy and distribution of relaxation time analysis revealed that the high oxygen vacancy concentration in the NF-based scaffold facilitates the charge transfer and incorporation reaction occurred at the interfaces between the cathode and electrolyte. Our results demonstrate the high feasibility and potential of interface engineering for achieving IT-SOFCs with higher performance and stability.","PeriodicalId":52353,"journal":{"name":"International Journal of Extreme Manufacturing","volume":"72 1","pages":""},"PeriodicalIF":14.7,"publicationDate":"2023-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73661067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-18DOI: 10.1088/2631-7990/acb46d
Hye-mi Kim, Dong-Gyu Kim, Yoon‐Seo Kim, Min-Suk Kim, Jinsin Park
Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide semiconductors has grown. They offer high mobility, low off-current, low process temperature, and wide flexibility for compositions and processes. Unfortunately, depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues, especially for high-resolution displays and highly integrated memory devices. Conventional approaches have limited process flexibility and poor conformality on structured surfaces. Atomic layer deposition (ALD) is an advanced technique which can provide conformal, thickness-controlled, and high-quality thin film deposition. Accordingly, studies on ALD based oxide semiconductors have dramatically increased recently. Even so, the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood, as are many issues related to applications. In this review, to introduce ALD-oxide semiconductors, we provide: (a) a brief summary of the history and importance of ALD-based oxide semiconductors in industry, (b) a discussion of the benefits of ALD for oxide semiconductor deposition (in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering), and (c) an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications. This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications, and the reasons ALD is important to applications of oxide semiconductors.
自从首次报道非晶in - ga - zn - o基薄膜晶体管以来，人们对氧化物半导体的兴趣日益浓厚。它们提供高迁移率、低断流、低工艺温度以及广泛的组合物和工艺灵活性。不幸的是，使用物理气相沉积等传统工艺沉积氧化物半导体会导致问题，特别是对于高分辨率显示器和高度集成的存储设备。传统的方法在结构表面上具有有限的工艺灵活性和较差的一致性。原子层沉积(ALD)是一种先进的技术，可以提供保形、厚度控制和高质量的薄膜沉积。因此，近年来对ALD基氧化物半导体的研究急剧增加。尽管如此，与应用相关的许多问题一样，人们对ald氧化物半导体的薄膜特性与沉积相关的主要变量之间的关系仍然知之甚少。在这篇综述中，我们介绍了ald -氧化物半导体，我们提供:(a)简要总结了基于ALD的氧化物半导体在工业中的历史和重要性，(b)讨论了ALD在氧化物半导体沉积中的好处(垂直分布的原位成分控制/垂直结构工程/化学反应和薄膜性能/绝缘体和界面工程)，以及(c)解释了氧化半导体和ALD在工业应用中的缩放问题。这一综述为研究半导体材料和电子器件应用的研究人员提供了有价值的视角，以及ALD对氧化物半导体应用的重要意义。
{"title":"Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook","authors":"Hye-mi Kim, Dong-Gyu Kim, Yoon‐Seo Kim, Min-Suk Kim, Jinsin Park","doi":"10.1088/2631-7990/acb46d","DOIUrl":"https://doi.org/10.1088/2631-7990/acb46d","url":null,"abstract":"Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide semiconductors has grown. They offer high mobility, low off-current, low process temperature, and wide flexibility for compositions and processes. Unfortunately, depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues, especially for high-resolution displays and highly integrated memory devices. Conventional approaches have limited process flexibility and poor conformality on structured surfaces. Atomic layer deposition (ALD) is an advanced technique which can provide conformal, thickness-controlled, and high-quality thin film deposition. Accordingly, studies on ALD based oxide semiconductors have dramatically increased recently. Even so, the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood, as are many issues related to applications. In this review, to introduce ALD-oxide semiconductors, we provide: (a) a brief summary of the history and importance of ALD-based oxide semiconductors in industry, (b) a discussion of the benefits of ALD for oxide semiconductor deposition (in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering), and (c) an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications. This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications, and the reasons ALD is important to applications of oxide semiconductors.","PeriodicalId":52353,"journal":{"name":"International Journal of Extreme Manufacturing","volume":"1 1","pages":""},"PeriodicalIF":14.7,"publicationDate":"2023-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82007963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-07DOI: 10.1088/2631-7990/acb133
Shota Kawabata, Shi Bai, K. Obata, G. Miyaji, K. Sugioka
Femtosecond laser pulses with GHz burst mode that consist of a series of trains of ultrashort laser pulses with a pulse interval of several hundred picoseconds offer distinct features in material processing that cannot be obtained by the conventional irradiation scheme of femtosecond laser pulses (single-pulse mode). However, most studies using the GHz burst mode femtosecond laser pulses focus on ablation of materials to achieve high-efficiency and high-quality material removal. In this study, we explore the ability of the GHz burst mode femtosecond laser processing to form laser-induced periodic surface structures (LIPSS) on silicon. It is well known that the direction of LIPSS formed by the single-pulse mode with linearly polarized laser pulses is typically perpendicular to the laser polarization direction. In contrast, we find that the GHz burst mode femtosecond laser (wavelength: 1030 nm, intra-pulse duration: 220 fs, intra-pulse interval time (intra-pulse repetition rate): 205 ps (4.88 GHz), burst pulse repetition rate: 200 kHz) creates unique two-dimensional (2D) LIPSS. We regard the formation mechanism of 2D LIPSS as the synergetic contribution of the electromagnetic mechanism and the hydrodynamic mechanism. Specifically, generation of hot spots with highly enhanced electric fields by the localized surface plasmon resonance of subsequent pulses in the bursts within the nanogrooves of one-dimensional LIPSS formed by the preceding pulses creates 2D LIPSS. Additionally, hydrodynamic instability including convection flow determines the final structure of 2D LIPSS.
{"title":"Two-dimensional laser-induced periodic surface structures formed on crystalline silicon by GHz burst mode femtosecond laser pulses","authors":"Shota Kawabata, Shi Bai, K. Obata, G. Miyaji, K. Sugioka","doi":"10.1088/2631-7990/acb133","DOIUrl":"https://doi.org/10.1088/2631-7990/acb133","url":null,"abstract":"Femtosecond laser pulses with GHz burst mode that consist of a series of trains of ultrashort laser pulses with a pulse interval of several hundred picoseconds offer distinct features in material processing that cannot be obtained by the conventional irradiation scheme of femtosecond laser pulses (single-pulse mode). However, most studies using the GHz burst mode femtosecond laser pulses focus on ablation of materials to achieve high-efficiency and high-quality material removal. In this study, we explore the ability of the GHz burst mode femtosecond laser processing to form laser-induced periodic surface structures (LIPSS) on silicon. It is well known that the direction of LIPSS formed by the single-pulse mode with linearly polarized laser pulses is typically perpendicular to the laser polarization direction. In contrast, we find that the GHz burst mode femtosecond laser (wavelength: 1030 nm, intra-pulse duration: 220 fs, intra-pulse interval time (intra-pulse repetition rate): 205 ps (4.88 GHz), burst pulse repetition rate: 200 kHz) creates unique two-dimensional (2D) LIPSS. We regard the formation mechanism of 2D LIPSS as the synergetic contribution of the electromagnetic mechanism and the hydrodynamic mechanism. Specifically, generation of hot spots with highly enhanced electric fields by the localized surface plasmon resonance of subsequent pulses in the bursts within the nanogrooves of one-dimensional LIPSS formed by the preceding pulses creates 2D LIPSS. Additionally, hydrodynamic instability including convection flow determines the final structure of 2D LIPSS.","PeriodicalId":52353,"journal":{"name":"International Journal of Extreme Manufacturing","volume":"7 1","pages":""},"PeriodicalIF":14.7,"publicationDate":"2023-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80141003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-07DOI: 10.1088/2631-7990/acb134
Jinshi Wang, F. Fang, Hao An, Shang-Hua Wu, Huimin Qi, Yuexuan Cai, Guanyu Guo
With the rapid development in advanced industries, such as microelectronics and optics sectors, the functional feature size of devises/components has been decreasing from micro to nanometric, and even ACS for higher performance, smaller volume and lower energy consumption. By this time, a great many quantum structures are proposed, with not only an extreme scale of several or even single atom, but also a nearly ideal lattice structure with no material defect. It is almost no doubt that such structures play critical role in the next generation products, which shows an urgent demand for the ACSM. Laser machining is one of the most important approaches widely used in engineering and scientific research. It is high-efficient and applicable for most kinds of materials. Moreover, the processing scale covers a huge range from millimeters to nanometers, and has already touched the atomic level. Laser–material interaction mechanism, as the foundation of laser machining, determines the machining accuracy and surface quality. It becomes much more sophisticated and dominant with a decrease in processing scale, which is systematically reviewed in this article. In general, the mechanisms of laser-induced material removal are classified into ablation, CE and atomic desorption, with a decrease in the scale from above microns to angstroms. The effects of processing parameters on both fundamental material response and machined surface quality are discussed, as well as theoretical methods to simulate and understand the underlying mechanisms. Examples at nanometric to atomic scale are provided, which demonstrate the capability of laser machining in achieving the ultimate precision and becoming a promising approach to ACSM.
{"title":"Laser machining fundamentals: micro, nano, atomic and close-to-atomic scales","authors":"Jinshi Wang, F. Fang, Hao An, Shang-Hua Wu, Huimin Qi, Yuexuan Cai, Guanyu Guo","doi":"10.1088/2631-7990/acb134","DOIUrl":"https://doi.org/10.1088/2631-7990/acb134","url":null,"abstract":"With the rapid development in advanced industries, such as microelectronics and optics sectors, the functional feature size of devises/components has been decreasing from micro to nanometric, and even ACS for higher performance, smaller volume and lower energy consumption. By this time, a great many quantum structures are proposed, with not only an extreme scale of several or even single atom, but also a nearly ideal lattice structure with no material defect. It is almost no doubt that such structures play critical role in the next generation products, which shows an urgent demand for the ACSM. Laser machining is one of the most important approaches widely used in engineering and scientific research. It is high-efficient and applicable for most kinds of materials. Moreover, the processing scale covers a huge range from millimeters to nanometers, and has already touched the atomic level. Laser–material interaction mechanism, as the foundation of laser machining, determines the machining accuracy and surface quality. It becomes much more sophisticated and dominant with a decrease in processing scale, which is systematically reviewed in this article. In general, the mechanisms of laser-induced material removal are classified into ablation, CE and atomic desorption, with a decrease in the scale from above microns to angstroms. The effects of processing parameters on both fundamental material response and machined surface quality are discussed, as well as theoretical methods to simulate and understand the underlying mechanisms. Examples at nanometric to atomic scale are provided, which demonstrate the capability of laser machining in achieving the ultimate precision and becoming a promising approach to ACSM.","PeriodicalId":52353,"journal":{"name":"International Journal of Extreme Manufacturing","volume":"11 1","pages":""},"PeriodicalIF":14.7,"publicationDate":"2023-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88417467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-29DOI: 10.1088/2631-7990/acaa14
Pierre Balage, John J. Lopez, G. Bonamis, C. Hönninger, I. Manek-Hönninger
We report novel results on top-down percussion drilling in different glasses with femtosecond laser GHz-bursts. Thanks to this particular regime of light–matter interaction, combining non-linear absorption and thermal cumulative effects, we obtained crack-free holes of aspect ratios exceeding 30 in sodalime and 70 in fused silica. The results are discussed in terms of inner wall morphology, aspect ratio and drilling speed.
{"title":"Crack-free high-aspect ratio holes in glasses by top–down percussion drilling with infrared femtosecond laser GHz-bursts","authors":"Pierre Balage, John J. Lopez, G. Bonamis, C. Hönninger, I. Manek-Hönninger","doi":"10.1088/2631-7990/acaa14","DOIUrl":"https://doi.org/10.1088/2631-7990/acaa14","url":null,"abstract":"We report novel results on top-down percussion drilling in different glasses with femtosecond laser GHz-bursts. Thanks to this particular regime of light–matter interaction, combining non-linear absorption and thermal cumulative effects, we obtained crack-free holes of aspect ratios exceeding 30 in sodalime and 70 in fused silica. The results are discussed in terms of inner wall morphology, aspect ratio and drilling speed.","PeriodicalId":52353,"journal":{"name":"International Journal of Extreme Manufacturing","volume":"44 1","pages":""},"PeriodicalIF":14.7,"publicationDate":"2022-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73377344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-15DOI: 10.1088/2631-7990/acabee
F. Monteverde, M. Gaboardi, F. Saraga, Lun Feng, W. Fahrenholtz, G. Hilmas
High-entropy (HE) ultra-high temperature ceramics have the chance to pave the way for future applications propelling technology advantages in the fields of energy conversion and extreme environmental shielding. Among others, HE diborides stand out owing to their intrinsic anisotropic layered structure and ability to withstand ultra-high temperatures. Herein, we employed in-situ high-resolution synchrotron diffraction over a plethora of multicomponent compositions, with four to seven transition metals, with the intent of understanding the thermal lattice expansion following different composition or synthesis process. As a result, we were able to control the average thermal expansion (TE) from 1.3 × 10−6 to 6.9 × 10−6 K−1 depending on the combination of metals, with a variation of in-plane to out-of-plane TE ratio ranging from 1.5 to 2.8.
{"title":"Anisotropic thermal expansion in high-entropy multicomponent AlB2-type diboride solid solutions","authors":"F. Monteverde, M. Gaboardi, F. Saraga, Lun Feng, W. Fahrenholtz, G. Hilmas","doi":"10.1088/2631-7990/acabee","DOIUrl":"https://doi.org/10.1088/2631-7990/acabee","url":null,"abstract":"High-entropy (HE) ultra-high temperature ceramics have the chance to pave the way for future applications propelling technology advantages in the fields of energy conversion and extreme environmental shielding. Among others, HE diborides stand out owing to their intrinsic anisotropic layered structure and ability to withstand ultra-high temperatures. Herein, we employed in-situ high-resolution synchrotron diffraction over a plethora of multicomponent compositions, with four to seven transition metals, with the intent of understanding the thermal lattice expansion following different composition or synthesis process. As a result, we were able to control the average thermal expansion (TE) from 1.3 × 10−6 to 6.9 × 10−6 K−1 depending on the combination of metals, with a variation of in-plane to out-of-plane TE ratio ranging from 1.5 to 2.8.","PeriodicalId":52353,"journal":{"name":"International Journal of Extreme Manufacturing","volume":"76 1","pages":""},"PeriodicalIF":14.7,"publicationDate":"2022-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83296911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-13DOI: 10.1088/2631-7990/acab40
Haizhen Wang, Yingying Chen, Dehui Li
Two-dimensional (2D)/quasi-2D organic-inorganic halide perovskites are regarded as naturally formed multiple quantum wells with inorganic layers isolated by long organic chains, which exhibit layered structure, large exciton binding energy, strong nonlinear optical effect, tunable bandgap via changing the layer number or chemical composition, improved environmental stability, and excellent optoelectronic properties. The extensive choice of long organic chains endows 2D/quasi-2D perovskites with tunable electron-phonon coupling strength, chirality, or ferroelectricity properties. In particular, the layered nature of 2D/quasi-2D perovskites allows us to exfoliate them to thin plates to integrate with other materials to form heterostructures, the fundamental structural units for optoelectronic devices, which would greatly extend the functionalities in view of the diversity of 2D/quasi-2D perovskites. In this paper, the recent achievements of 2D/quasi-2D perovskite-based heterostructures are reviewed. First, the structure and physical properties of 2D/quasi-2D perovskites are introduced. We then discuss the construction and characterizations of 2D/quasi-2D perovskite-based heterostructures and highlight the prominent optical properties of the constructed heterostructures. Further, the potential applications of 2D/quasi-2D perovskite-based heterostructures in photovoltaic devices, light emitting devices, photodetectors/phototransistors, and valleytronic devices are demonstrated. Finally, we summarize the current challenges and propose further research directions in the field of 2D/quasi-2D perovskite-based heterostructures.
{"title":"Two/Quasi-two-dimensional perovskite-based heterostructures: construction, properties and applications","authors":"Haizhen Wang, Yingying Chen, Dehui Li","doi":"10.1088/2631-7990/acab40","DOIUrl":"https://doi.org/10.1088/2631-7990/acab40","url":null,"abstract":"Two-dimensional (2D)/quasi-2D organic-inorganic halide perovskites are regarded as naturally formed multiple quantum wells with inorganic layers isolated by long organic chains, which exhibit layered structure, large exciton binding energy, strong nonlinear optical effect, tunable bandgap via changing the layer number or chemical composition, improved environmental stability, and excellent optoelectronic properties. The extensive choice of long organic chains endows 2D/quasi-2D perovskites with tunable electron-phonon coupling strength, chirality, or ferroelectricity properties. In particular, the layered nature of 2D/quasi-2D perovskites allows us to exfoliate them to thin plates to integrate with other materials to form heterostructures, the fundamental structural units for optoelectronic devices, which would greatly extend the functionalities in view of the diversity of 2D/quasi-2D perovskites. In this paper, the recent achievements of 2D/quasi-2D perovskite-based heterostructures are reviewed. First, the structure and physical properties of 2D/quasi-2D perovskites are introduced. We then discuss the construction and characterizations of 2D/quasi-2D perovskite-based heterostructures and highlight the prominent optical properties of the constructed heterostructures. Further, the potential applications of 2D/quasi-2D perovskite-based heterostructures in photovoltaic devices, light emitting devices, photodetectors/phototransistors, and valleytronic devices are demonstrated. Finally, we summarize the current challenges and propose further research directions in the field of 2D/quasi-2D perovskite-based heterostructures.","PeriodicalId":52353,"journal":{"name":"International Journal of Extreme Manufacturing","volume":"21 1","pages":""},"PeriodicalIF":14.7,"publicationDate":"2022-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88063485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-13DOI: 10.1088/2631-7990/acab3f
Weihai Huang, Jiwang Yan
Brittle materials are widely used for producing important components in the industry of optics, optoelectronics, and semiconductors. Ultraprecision machining of brittle materials with high surface quality and surface integrity helps improve the functional performance and lifespan of the components. According to their hardness, brittle materials can be roughly divided into hard-brittle and soft-brittle. Although there have been some literature reviews for ultraprecision machining of hard-brittle materials, up to date, very few review papers are available that focus on the processing of soft-brittle materials. Due to the ‘soft’ and ‘brittle’ properties, this group of materials has unique machining characteristics. This paper presents a comprehensive overview of recent advances in ultraprecision machining of soft-brittle materials. Critical aspects of machining mechanisms, such as chip formation, surface topography, and subsurface damage for different machining methods, including diamond turning, micro end milling, ultraprecision grinding, and micro/nano burnishing, are compared in terms of tool-workpiece interaction. The effects of tool geometries on the machining characteristics of soft-brittle materials are systematically analyzed, and dominating factors are sorted out. Problems and challenges in the engineering applications are identified, and solutions/guidelines for future R&D are provided.
{"title":"Effect of tool geometry on ultraprecision machining of soft-brittle materials: a comprehensive review","authors":"Weihai Huang, Jiwang Yan","doi":"10.1088/2631-7990/acab3f","DOIUrl":"https://doi.org/10.1088/2631-7990/acab3f","url":null,"abstract":"Brittle materials are widely used for producing important components in the industry of optics, optoelectronics, and semiconductors. Ultraprecision machining of brittle materials with high surface quality and surface integrity helps improve the functional performance and lifespan of the components. According to their hardness, brittle materials can be roughly divided into hard-brittle and soft-brittle. Although there have been some literature reviews for ultraprecision machining of hard-brittle materials, up to date, very few review papers are available that focus on the processing of soft-brittle materials. Due to the ‘soft’ and ‘brittle’ properties, this group of materials has unique machining characteristics. This paper presents a comprehensive overview of recent advances in ultraprecision machining of soft-brittle materials. Critical aspects of machining mechanisms, such as chip formation, surface topography, and subsurface damage for different machining methods, including diamond turning, micro end milling, ultraprecision grinding, and micro/nano burnishing, are compared in terms of tool-workpiece interaction. The effects of tool geometries on the machining characteristics of soft-brittle materials are systematically analyzed, and dominating factors are sorted out. Problems and challenges in the engineering applications are identified, and solutions/guidelines for future R&D are provided.","PeriodicalId":52353,"journal":{"name":"International Journal of Extreme Manufacturing","volume":"37 1","pages":""},"PeriodicalIF":14.7,"publicationDate":"2022-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83096874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-05DOI: 10.1088/2631-7990/aca8da
Wutao Wei, Zi-wei Guo, Jiaqiang Xu, Z. Fang, Jiujun Zhang, Yu Jia, Liwei Mi
The construction of heterojunctions in composite materials to optimize the electronic structures and active sites of energy materials is considered to be the promising strategy for the fabrication of high-performance electrochemical energy devices. In this paper, a one-step, easy processing and cost-effective technique for generating composite materials with heterojunctions was successfully developed. The composite containing Ni3S4, NiS, and N-doped amorphous carbon (abbreviated as Ni3S4/NiS/NC) with multiple heterojunction nanosheets are synthesized via the space-confined effect of molten salt interface of recrystallized NaCl. Several lattice matching forms of Ni3S4 with cubic structure and NiS with hexagonal structure are confirmed by the detailed characterization of heterogeneous interfaces. The C–S bonds are the key factor in realizing the chemical coupling between nickel sulfide and NC and constructing the stable heterojunction. Density functional theory calculations further revealed that the electronic interaction on the heterogeneous interface of Ni3S4/NiS can contribute to high electronic conductivity. The heterogeneous interfaces are identified to be the good electroactive region with excellent electrochemical performance. The synergistic effect of abundant active sites, the enhanced kinetic process and valid interface charge transfer channels of Ni3S4/NiS/NC multiple heterojunction can guarantee high reversible redox activity and high structural stability, resulting in both high specific capacitance and energy/power densities when it is used as the electrode for supercapacitors. This work offers a new avenue for the rational design of the heterojunction materials with improved electrochemical performance through space-confined effect of NaCl.
{"title":"Novel Ni3S4/NiS/NC composite with multiple heterojunctions synthesized through space-confined effect for high-performance supercapacitors","authors":"Wutao Wei, Zi-wei Guo, Jiaqiang Xu, Z. Fang, Jiujun Zhang, Yu Jia, Liwei Mi","doi":"10.1088/2631-7990/aca8da","DOIUrl":"https://doi.org/10.1088/2631-7990/aca8da","url":null,"abstract":"The construction of heterojunctions in composite materials to optimize the electronic structures and active sites of energy materials is considered to be the promising strategy for the fabrication of high-performance electrochemical energy devices. In this paper, a one-step, easy processing and cost-effective technique for generating composite materials with heterojunctions was successfully developed. The composite containing Ni3S4, NiS, and N-doped amorphous carbon (abbreviated as Ni3S4/NiS/NC) with multiple heterojunction nanosheets are synthesized via the space-confined effect of molten salt interface of recrystallized NaCl. Several lattice matching forms of Ni3S4 with cubic structure and NiS with hexagonal structure are confirmed by the detailed characterization of heterogeneous interfaces. The C–S bonds are the key factor in realizing the chemical coupling between nickel sulfide and NC and constructing the stable heterojunction. Density functional theory calculations further revealed that the electronic interaction on the heterogeneous interface of Ni3S4/NiS can contribute to high electronic conductivity. The heterogeneous interfaces are identified to be the good electroactive region with excellent electrochemical performance. The synergistic effect of abundant active sites, the enhanced kinetic process and valid interface charge transfer channels of Ni3S4/NiS/NC multiple heterojunction can guarantee high reversible redox activity and high structural stability, resulting in both high specific capacitance and energy/power densities when it is used as the electrode for supercapacitors. This work offers a new avenue for the rational design of the heterojunction materials with improved electrochemical performance through space-confined effect of NaCl.","PeriodicalId":52353,"journal":{"name":"International Journal of Extreme Manufacturing","volume":"67 1","pages":""},"PeriodicalIF":14.7,"publicationDate":"2022-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75835669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-30DOI: 10.1088/2631-7990/aca79f
É. Audouard, E. Mottay
Bursts of GHz repetition rate pulses involve more ablation mechanisms than single femtosecond pulses. Efficient ablation by GHz laser pulses is a multi-step process, consisting of a first thermal incubation phase, followed by a highly efficient ablation phase. GHz ablation therefore combines thermal and non-thermal ablation mechanisms. With an optimal choice of the burst duration, the ablation efficiency can be highly enhanced. Long bursts, comprising tens of pulses to hundreds of pulses, are needed to take full advantage of the increase in ablation efficiency.
{"title":"High efficiency GHz laser processing with long bursts","authors":"É. Audouard, E. Mottay","doi":"10.1088/2631-7990/aca79f","DOIUrl":"https://doi.org/10.1088/2631-7990/aca79f","url":null,"abstract":"Bursts of GHz repetition rate pulses involve more ablation mechanisms than single femtosecond pulses. Efficient ablation by GHz laser pulses is a multi-step process, consisting of a first thermal incubation phase, followed by a highly efficient ablation phase. GHz ablation therefore combines thermal and non-thermal ablation mechanisms. With an optimal choice of the burst duration, the ablation efficiency can be highly enhanced. Long bursts, comprising tens of pulses to hundreds of pulses, are needed to take full advantage of the increase in ablation efficiency.","PeriodicalId":52353,"journal":{"name":"International Journal of Extreme Manufacturing","volume":"20 1","pages":""},"PeriodicalIF":14.7,"publicationDate":"2022-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77181589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：