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2012 Symposium on VLSI Circuits (VLSIC)最新文献

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An all 0.5V, 1Mbps, 315MHz OOK transceiver with 38-µW career-frequency-free intermittent sampling receiver and 52-µW class-F transmitter in 40-nm CMOS 全0.5V, 1Mbps, 315MHz OOK收发器,38µW无职业频率间歇采样接收器和52µW 40 nm CMOS f类发射器
Pub Date : 2012-06-13 DOI: 10.1109/VLSIC.2012.6243778
Akira Saito, Kentaro Honda, Y. Zheng, S. Iguchi, Kazunori Watanabe, T. Sakurai, M. Takamiya
An all 0.5V, 1Mbps, 315MHz OOK transceiver in 40-nm CMOS for body area networks is developed. Both a 38-pJ/bit career-frequency-free intermittent sampling receiver with -55dBm sensitivity and a 52-pJ/bit class-F transmitter with -21dBm output power achieve the lowest energy in the published transceivers for wireless sensor networks.
开发了一种用于体域网络的全0.5V, 1Mbps, 315MHz的40nm CMOS OOK收发器。在已发布的无线传感器网络收发器中,灵敏度为-55dBm的38-pJ/bit无职业频率间歇采样接收器和输出功率为-21dBm的52-pJ/bit f类发射器都实现了最低能量。
{"title":"An all 0.5V, 1Mbps, 315MHz OOK transceiver with 38-µW career-frequency-free intermittent sampling receiver and 52-µW class-F transmitter in 40-nm CMOS","authors":"Akira Saito, Kentaro Honda, Y. Zheng, S. Iguchi, Kazunori Watanabe, T. Sakurai, M. Takamiya","doi":"10.1109/VLSIC.2012.6243778","DOIUrl":"https://doi.org/10.1109/VLSIC.2012.6243778","url":null,"abstract":"An all 0.5V, 1Mbps, 315MHz OOK transceiver in 40-nm CMOS for body area networks is developed. Both a 38-pJ/bit career-frequency-free intermittent sampling receiver with -55dBm sensitivity and a 52-pJ/bit class-F transmitter with -21dBm output power achieve the lowest energy in the published transceivers for wireless sensor networks.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"37 1","pages":"38-39"},"PeriodicalIF":0.0,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85807429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
4×12 Gb/s 0.96 pJ/b/lane analog-IIR crosstalk cancellation and signal reutilization receiver for single-ended I/Os in 65 nm CMOS 4×12 Gb/s 0.96 pJ/b/lane模拟- iir串扰对消和信号复用接收器,用于65nm CMOS单端I/ o
Pub Date : 2012-06-13 DOI: 10.1109/VLSIC.2012.6243829
Taehyoun Oh, R. Harjani
A crosstalk cancellation and signal reutilization (XTCR) algorithm implemented with analog-IIR networks dramatically improves signal integrity across 4 closely-spaced single-ended PCB traces. The prototype XTCR design implemented in 65 nm CMOS improves the measured average horizontal and vertical-eye openings of the 4 channels by 37.5% and 26.4% at 10-8 BER, while consuming only 0.96 pJ/b/lane.
通过模拟iir网络实现的串扰消除和信号再利用(XTCR)算法显着提高了4个紧密间隔的单端PCB走线的信号完整性。在65 nm CMOS中实现的XTCR原型设计在10-8 BER下将4通道的平均水平和垂直眼开口分别提高了37.5%和26.4%,而功耗仅为0.96 pJ/b/lane。
{"title":"4×12 Gb/s 0.96 pJ/b/lane analog-IIR crosstalk cancellation and signal reutilization receiver for single-ended I/Os in 65 nm CMOS","authors":"Taehyoun Oh, R. Harjani","doi":"10.1109/VLSIC.2012.6243829","DOIUrl":"https://doi.org/10.1109/VLSIC.2012.6243829","url":null,"abstract":"A crosstalk cancellation and signal reutilization (XTCR) algorithm implemented with analog-IIR networks dramatically improves signal integrity across 4 closely-spaced single-ended PCB traces. The prototype XTCR design implemented in 65 nm CMOS improves the measured average horizontal and vertical-eye openings of the 4 channels by 37.5% and 26.4% at 10-8 BER, while consuming only 0.96 pJ/b/lane.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"1 1","pages":"140-141"},"PeriodicalIF":0.0,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81754866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Technology innovations for smart cities 智慧城市的技术创新
Pub Date : 2012-06-13 DOI: 10.1109/VLSIC.2012.6243763
Akira Maeda
New technologies are required in smart city applications, such as sensing, highly parallel processing, and mobile broadband communication. In this paper, it is pointed out that integration of information and control system technologies will be a key driver for smart cities, because these systems with quite different system characteristics should be integrated to realize sophisticated social infrastructure systems. Our approach will be explained with several project examples to describe the challenges and future trend of technology development.
智慧城市的应用需要新的技术,如传感、高度并行处理和移动宽带通信。本文指出,信息和控制系统技术的集成将成为智慧城市的关键驱动力,因为这些具有完全不同系统特征的系统需要集成以实现复杂的社会基础设施系统。我们将用几个项目实例来解释我们的方法,以描述技术发展的挑战和未来趋势。
{"title":"Technology innovations for smart cities","authors":"Akira Maeda","doi":"10.1109/VLSIC.2012.6243763","DOIUrl":"https://doi.org/10.1109/VLSIC.2012.6243763","url":null,"abstract":"New technologies are required in smart city applications, such as sensing, highly parallel processing, and mobile broadband communication. In this paper, it is pointed out that integration of information and control system technologies will be a key driver for smart cities, because these systems with quite different system characteristics should be integrated to realize sophisticated social infrastructure systems. Our approach will be explained with several project examples to describe the challenges and future trend of technology development.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"40 1","pages":"6-9"},"PeriodicalIF":0.0,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79168019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A standard cell compatible bidirectional repeater with thyristor assist 标准单元兼容双向中继器与晶闸管辅助
Pub Date : 2012-06-13 DOI: 10.1109/VLSIC.2012.6243846
Sudhir K. Satpathy, D. Sylvester, D. Blaauw
A thyristor-assisted standard cell compatible self-timed bidirectional repeater with no configuration overhead enables 8mm interconnects to achieve 37% higher speed at 20% lower energy over conventional repeaters in 65nm CMOS at 1.0V. Bidirectional operation without the need for configuration logic removes the need for clocking, yielding up to 14× higher energy efficiency at low data switching activity.
晶闸管辅助标准单元兼容自定时双向中继器,无配置开销,8mm互连实现比传统的1.0V 65nm CMOS中继器高37%的速度和低20%的能量。无需配置逻辑的双向操作消除了对时钟的需求,在低数据交换活动下产生高达14倍的高能效。
{"title":"A standard cell compatible bidirectional repeater with thyristor assist","authors":"Sudhir K. Satpathy, D. Sylvester, D. Blaauw","doi":"10.1109/VLSIC.2012.6243846","DOIUrl":"https://doi.org/10.1109/VLSIC.2012.6243846","url":null,"abstract":"A thyristor-assisted standard cell compatible self-timed bidirectional repeater with no configuration overhead enables 8mm interconnects to achieve 37% higher speed at 20% lower energy over conventional repeaters in 65nm CMOS at 1.0V. Bidirectional operation without the need for configuration logic removes the need for clocking, yielding up to 14× higher energy efficiency at low data switching activity.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"64 1","pages":"174-175"},"PeriodicalIF":0.0,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73832449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 2.8GHz 128-entry × 152b 3-read/2-write multi-precision floating-point register file and shuffler in 32nm CMOS 基于32nm CMOS的2.8GHz 128入口× 152b 3读2写多精度浮点寄存器文件和shuffle
Pub Date : 2012-06-13 DOI: 10.1109/VLSIC.2012.6243818
S. Hsu, A. Agarwal, M. Anders, Himanshu Kaul, S. Mathew, F. Sheikh, R. Krishnamurthy, S. Borkar
A 128-entry × 152b 3-read/2-write ported multi-precision floating-point register file/shuffler with measured 2.8GHz operation is fabricated in 1.05V, 32nm CMOS. Single-precision (24b-mantissa), 2-way 12b or 4-way 6b reduced mantissa precision modes, certainty tracking bits, mode-dependent gating, area-efficient windowing using 1R/1W cells, and ultra-low-voltage read/write circuits enable 350mV-1.2V wide dynamic voltage range with measured peak energy-efficiency of 751GOPS/W at 400mV, 4-way 6b-mode (22.3× higher than 1.05V single-precision mode) and 19% area reduction over single-precision 3R/2W implementations.
在1.05V, 32nm CMOS上,制作了一个128位× 152b 3读2写多精度浮点寄存器文件/shuffle,测量工作频率为2.8GHz。单精度(24b-尾数),2路12b或4路6b减小尾数精度模式,确定跟踪位,模式相关门控,使用1R/1W电池的面积高效窗口,以及超低电压读/写电路,使350mV-1.2V宽动态电压范围具有测量的峰值能量效率751GOPS/W在400mV, 4路6b模式(比1.05V单精度模式高22.3倍)和19%的面积比单精度3R/2W实现。
{"title":"A 2.8GHz 128-entry × 152b 3-read/2-write multi-precision floating-point register file and shuffler in 32nm CMOS","authors":"S. Hsu, A. Agarwal, M. Anders, Himanshu Kaul, S. Mathew, F. Sheikh, R. Krishnamurthy, S. Borkar","doi":"10.1109/VLSIC.2012.6243818","DOIUrl":"https://doi.org/10.1109/VLSIC.2012.6243818","url":null,"abstract":"A 128-entry × 152b 3-read/2-write ported multi-precision floating-point register file/shuffler with measured 2.8GHz operation is fabricated in 1.05V, 32nm CMOS. Single-precision (24b-mantissa), 2-way 12b or 4-way 6b reduced mantissa precision modes, certainty tracking bits, mode-dependent gating, area-efficient windowing using 1R/1W cells, and ultra-low-voltage read/write circuits enable 350mV-1.2V wide dynamic voltage range with measured peak energy-efficiency of 751GOPS/W at 400mV, 4-way 6b-mode (22.3× higher than 1.05V single-precision mode) and 19% area reduction over single-precision 3R/2W implementations.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"278 1","pages":"118-119"},"PeriodicalIF":0.0,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83428208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A 0.45-V input on-chip gate boosted (OGB) buck converter in 40-nm CMOS with more than 90% efficiency in load range from 2µW to 50µW 一种0.45 v输入片上栅极升压(OGB) 40纳米CMOS降压变换器,在2µW至50µW负载范围内效率超过90%
Pub Date : 2012-06-13 DOI: 10.1109/VLSIC.2012.6243856
Xin Zhang, Po-Hung Chen, Y. Ryu, K. Ishida, Yasuyuki Okuma, Kazunori Watanabe, T. Sakurai, M. Takamiya
A 0.45-V input, 0.4-V output on-chip gate boosted (OGB) buck converter with clock gated digital PWM controller in 40-nm CMOS achieved the highest efficiency to date with the output power less than 40μW. A linear delay trimming by a logarithmic stress voltage (LSV) scheme to compensate for the die-to-die delay variations of a delay line in the PWM controller with good controllability is also proposed.
采用时钟门控数字PWM控制器的片上栅极升压(OGB)降压变换器采用40纳米CMOS工艺,输入0.45 v,输出0.4 v,实现了迄今为止的最高效率,输出功率小于40μW。本文还提出了一种利用对数应力电压(LSV)来补偿延迟线模间延迟变化的线性延迟修整方案,该方案具有良好的可控性。
{"title":"A 0.45-V input on-chip gate boosted (OGB) buck converter in 40-nm CMOS with more than 90% efficiency in load range from 2µW to 50µW","authors":"Xin Zhang, Po-Hung Chen, Y. Ryu, K. Ishida, Yasuyuki Okuma, Kazunori Watanabe, T. Sakurai, M. Takamiya","doi":"10.1109/VLSIC.2012.6243856","DOIUrl":"https://doi.org/10.1109/VLSIC.2012.6243856","url":null,"abstract":"A 0.45-V input, 0.4-V output on-chip gate boosted (OGB) buck converter with clock gated digital PWM controller in 40-nm CMOS achieved the highest efficiency to date with the output power less than 40μW. A linear delay trimming by a logarithmic stress voltage (LSV) scheme to compensate for the die-to-die delay variations of a delay line in the PWM controller with good controllability is also proposed.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"44 1","pages":"194-195"},"PeriodicalIF":0.0,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80151595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
A 21.5mW 10+Gb/s mm-Wave phased-array transmitter in 65nm CMOS 21.5mW 10+Gb/s毫米波相控阵发射机65nm CMOS
Pub Date : 2012-06-13 DOI: 10.1109/VLSIC.2012.6243785
Lingkai Kong, E. Alon
This paper presents a 65nm mm-wave transmitter efficiently supporting QPSK modulation and phased array functionality with a proposed oscillator modulation technique. The design delivers an average output power of 1mW at 10Gb/s and 0.8mW at 14Gb/s while consuming 21.5mA DC current from a 1V supply. At 10Gb/s, an overall transmitter efficiency of 4.65% is achieved, representing ~1.8X improvement over prior art [1].
本文提出了一种65nm毫米波发射机,有效地支持QPSK调制和相控阵功能,并提出了振荡器调制技术。该设计在10Gb/s时平均输出功率为1mW,在14Gb/s时平均输出功率为0.8mW,同时从1V电源消耗21.5mA直流电流。在10Gb/s时,实现了4.65%的总体发射机效率,比现有技术[1]提高了1.8倍。
{"title":"A 21.5mW 10+Gb/s mm-Wave phased-array transmitter in 65nm CMOS","authors":"Lingkai Kong, E. Alon","doi":"10.1109/VLSIC.2012.6243785","DOIUrl":"https://doi.org/10.1109/VLSIC.2012.6243785","url":null,"abstract":"This paper presents a 65nm mm-wave transmitter efficiently supporting QPSK modulation and phased array functionality with a proposed oscillator modulation technique. The design delivers an average output power of 1mW at 10Gb/s and 0.8mW at 14Gb/s while consuming 21.5mA DC current from a 1V supply. At 10Gb/s, an overall transmitter efficiency of 4.65% is achieved, representing ~1.8X improvement over prior art [1].","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"13 1","pages":"52-53"},"PeriodicalIF":0.0,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73451055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A wide common-mode fully-adaptive multi-standard 12.5Gb/s backplane transceiver in 28nm CMOS 采用28nm CMOS的宽共模全自适应多标准12.5Gb/s背板收发器
Pub Date : 2012-06-13 DOI: 10.1109/VLSIC.2012.6243811
J. Savoj, K. Hsieh, P. Upadhyaya, F. An, Ade Bekele, S. Chen, Xuewen Jiang, K. Lai, Chi Fung Poon, Aman Sewani, D. Turker, Karthik Venna, Zhaoyin Daniel Wu, Bruce Xu, E. Alon, Ken Chang
This paper describes the design of a fully-adaptive backplane transceiver embedded in a state-of-the-art, low-leakage, 28nm CMOS FPGA. The receive AFE utilizes a three-stage CTLE to provide selective frequency boost for long-tail ISI cancellation. A 5-tap speculative DFE removes the immediate post-cursor ISI. Both CTLE and DFE are fully adaptive using sign-sign LMS algorithm. A novel clocking technique uses wideband LC and ring oscillators for reliable clocking from 0.6-12.5Gb/s operation. The transmitter utilizes a 3-tap FIR and provides flexibility for supply and ground referenced operation. The transceiver achieves BER <; 10-15 over a 33dB-loss backplane at 12.5Gb/s and over channels with 10G-KR characteristics at 10.3125Gb/s.
本文介绍了一种全自适应背板收发器的设计,该收发器嵌入在最先进的低漏28nm CMOS FPGA中。接收AFE采用三级CTLE为长尾ISI消除提供选择性频率提升。一个5个抽头的推测DFE删除了直接的后游标ISI。CTLE和DFE均采用符号-符号LMS算法实现完全自适应。一种新颖的时钟技术,利用宽带LC和环形振荡器实现0.6-12.5Gb/s的可靠时钟。变送器采用3分接FIR,为供电和接地参考操作提供了灵活性。收发器BER <;在12.5Gb/s的33db损耗背板上和在10.3125Gb/s的10G-KR信道上传输10-15。
{"title":"A wide common-mode fully-adaptive multi-standard 12.5Gb/s backplane transceiver in 28nm CMOS","authors":"J. Savoj, K. Hsieh, P. Upadhyaya, F. An, Ade Bekele, S. Chen, Xuewen Jiang, K. Lai, Chi Fung Poon, Aman Sewani, D. Turker, Karthik Venna, Zhaoyin Daniel Wu, Bruce Xu, E. Alon, Ken Chang","doi":"10.1109/VLSIC.2012.6243811","DOIUrl":"https://doi.org/10.1109/VLSIC.2012.6243811","url":null,"abstract":"This paper describes the design of a fully-adaptive backplane transceiver embedded in a state-of-the-art, low-leakage, 28nm CMOS FPGA. The receive AFE utilizes a three-stage CTLE to provide selective frequency boost for long-tail ISI cancellation. A 5-tap speculative DFE removes the immediate post-cursor ISI. Both CTLE and DFE are fully adaptive using sign-sign LMS algorithm. A novel clocking technique uses wideband LC and ring oscillators for reliable clocking from 0.6-12.5Gb/s operation. The transmitter utilizes a 3-tap FIR and provides flexibility for supply and ground referenced operation. The transceiver achieves BER <; 10-15 over a 33dB-loss backplane at 12.5Gb/s and over channels with 10G-KR characteristics at 10.3125Gb/s.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"4 1","pages":"104-105"},"PeriodicalIF":0.0,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73862377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
A 1.6-mm2 38-mW 1.5-Gb/s LDPC decoder enabled by refresh-free embedded DRAM 采用免刷新嵌入式DRAM实现的1.6 mm2 38mw 1.5 gb /s LDPC解码器
Pub Date : 2012-06-13 DOI: 10.1109/VLSIC.2012.6243816
Youn Sung Park, D. Blaauw, D. Sylvester, Zhengya Zhang
Memory dominates the power consumption of high-throughput LDPC decoders. A 700 MHz refresh-free embedded DRAM (eDRAM) is designed as a low-power memory to retain data for the required access window. 321-kb eDRAM arrays are integrated in a 1.6 mm2, 65nm LDPC decoder suitable for IEEE 802.11ad. The LDPC decoder consumes 38 mW for a 1.5 Gb/s throughput at 90 MHz and 10 decoding iterations, and it achieves up to 9 Gb/s at 540 MHz.
内存在高吞吐量LDPC解码器的功耗中占主导地位。700mhz免刷新嵌入式DRAM (eDRAM)设计为低功耗存储器,为所需的访问窗口保留数据。321kb的eDRAM阵列集成在1.6 mm2、65nm LDPC解码器中,适用于IEEE 802.11ad。LDPC解码器在90 MHz和10次解码迭代时的吞吐量为1.5 Gb/s,功耗为38 mW,在540 MHz时可达到9gb /s。
{"title":"A 1.6-mm2 38-mW 1.5-Gb/s LDPC decoder enabled by refresh-free embedded DRAM","authors":"Youn Sung Park, D. Blaauw, D. Sylvester, Zhengya Zhang","doi":"10.1109/VLSIC.2012.6243816","DOIUrl":"https://doi.org/10.1109/VLSIC.2012.6243816","url":null,"abstract":"Memory dominates the power consumption of high-throughput LDPC decoders. A 700 MHz refresh-free embedded DRAM (eDRAM) is designed as a low-power memory to retain data for the required access window. 321-kb eDRAM arrays are integrated in a 1.6 mm2, 65nm LDPC decoder suitable for IEEE 802.11ad. The LDPC decoder consumes 38 mW for a 1.5 Gb/s throughput at 90 MHz and 10 decoding iterations, and it achieves up to 9 Gb/s at 540 MHz.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"32 1","pages":"114-115"},"PeriodicalIF":0.0,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74640723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
A 34fJ 10b 500 MS/s partial-interleaving pipelined SAR ADC 34fj10b 500 MS/s部分交错流水线SAR ADC
Pub Date : 2012-06-13 DOI: 10.1109/VLSIC.2012.6243804
Yan Zhu, Chi-Hang Chan, Sai-Weng Sin, U. Seng-Pan, R. Martins
A 10b 500MS/s ADC is presented that shares a full-speed SAR at front-end and interleaves the pipelined residue amplification with shared opamp and 2nd-stage SAR ADCs, which achieves high speed, low power and compact area. The prototype ADC in 65nm CMOS achieves a mean SNDR of 55.4dB with 8.2mW power dissipation at 1.2V. The active die area including the offset calibrations is 0.046mm2.
提出了一种10b 500MS/s的ADC,该ADC前端共享一个高速SAR,并与共享运放和二级SAR ADC相交叉,实现了高速、低功耗和小面积。该原型ADC采用65nm CMOS,在1.2V电压下,平均SNDR为55.4dB,功耗为8.2mW。包括偏置校准在内的活动模具面积为0.046mm2。
{"title":"A 34fJ 10b 500 MS/s partial-interleaving pipelined SAR ADC","authors":"Yan Zhu, Chi-Hang Chan, Sai-Weng Sin, U. Seng-Pan, R. Martins","doi":"10.1109/VLSIC.2012.6243804","DOIUrl":"https://doi.org/10.1109/VLSIC.2012.6243804","url":null,"abstract":"A 10b 500MS/s ADC is presented that shares a full-speed SAR at front-end and interleaves the pipelined residue amplification with shared opamp and 2nd-stage SAR ADCs, which achieves high speed, low power and compact area. The prototype ADC in 65nm CMOS achieves a mean SNDR of 55.4dB with 8.2mW power dissipation at 1.2V. The active die area including the offset calibrations is 0.046mm2.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"95 1","pages":"90-91"},"PeriodicalIF":0.0,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73559669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
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2012 Symposium on VLSI Circuits (VLSIC)
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