Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260950
M. Valant
Over the last twenty years, low-temperature co-firing ceramic (LTCC) technology has advanced to such an extent that it now allows the integration of a variety of passive components within the LTCC module. However, to achieve better performance some of them are still mounted as discrete components on the top of the module. An example of this type of component is a capacitor. In principle, no technological or design obstacles exist that would prevent the integration of capacitors into the module. The only problem is a lack of suitable LTCC material that exhibits the proper dielectric characteristics and is compatible with current LTCC materials and technology. Because the NP0-type capacitors represent the largest group of capacitors used with LTCC modules for RF applications we started the development of an NP0-type ceramic layer suitable for direct implementation with existing LTCC production lines. In this talk an example of such development will be presented where the very fundamental research has successfully been upgraded with an applied research and the new functional LTCC layers have been developed. They are characterized by K80, temperature stability, low dielectric loss and cosinterability with commercial low K tapes and silver electrode. The review of all the material properties relevant for the existing LTCC technology shows the possibility of a direct integration of the developed NP0-capacitor layer into the current LTCC modules.
{"title":"New LTCC materials: From fundamental to applied research","authors":"M. Valant","doi":"10.1109/ISPTS.2012.6260950","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260950","url":null,"abstract":"Over the last twenty years, low-temperature co-firing ceramic (LTCC) technology has advanced to such an extent that it now allows the integration of a variety of passive components within the LTCC module. However, to achieve better performance some of them are still mounted as discrete components on the top of the module. An example of this type of component is a capacitor. In principle, no technological or design obstacles exist that would prevent the integration of capacitors into the module. The only problem is a lack of suitable LTCC material that exhibits the proper dielectric characteristics and is compatible with current LTCC materials and technology. Because the NP0-type capacitors represent the largest group of capacitors used with LTCC modules for RF applications we started the development of an NP0-type ceramic layer suitable for direct implementation with existing LTCC production lines. In this talk an example of such development will be presented where the very fundamental research has successfully been upgraded with an applied research and the new functional LTCC layers have been developed. They are characterized by K80, temperature stability, low dielectric loss and cosinterability with commercial low K tapes and silver electrode. The review of all the material properties relevant for the existing LTCC technology shows the possibility of a direct integration of the developed NP0-capacitor layer into the current LTCC modules.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"43 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87565706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260892
B. Patnaik, J. Mohod, S. Duttagupta
In a solar photovoltaic (SPV) array [mxn] the solar modules are connected in series and parallel to achieve desired power output. The SPV array performance depends on different parameters such as incident insolation, temperature, array layout, shading etc. Shading due to cloud cover results in Non-Uniform Illumination (NUI STATES- BRIGHT, GREY and DARK). Mismatch in currents and voltages of the modules due to change in one or more parameters leads to loss in output power. Hence real time monitoring of current (I, di/dt) for each solar module and bypass diode in the SPV array is necessary. In addition temperature sensors are required to monitor open-circuit voltage (Voc) fluctuations. Previously, we have demonstrated optimization of an SPV array in BRIGHT and DARK state [1]. However in field testing we have observed an intermediate GREY state as well. The power output can be depressed in a string having multiple state modules in series. In this paper we have proposed a reconfiguration strategy whereby modules are categorized into BRIGHT, GREY, and DARK illumination states. Based on this strategy it has been demonstrated that a reconfigured SPV array will yield maximum power at the highest operating voltage.
{"title":"Distributed multi-sensor network for real time monitoring of illumination states for a reconfigurable solar photovoltaic array","authors":"B. Patnaik, J. Mohod, S. Duttagupta","doi":"10.1109/ISPTS.2012.6260892","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260892","url":null,"abstract":"In a solar photovoltaic (SPV) array [mxn] the solar modules are connected in series and parallel to achieve desired power output. The SPV array performance depends on different parameters such as incident insolation, temperature, array layout, shading etc. Shading due to cloud cover results in Non-Uniform Illumination (NUI STATES- BRIGHT, GREY and DARK). Mismatch in currents and voltages of the modules due to change in one or more parameters leads to loss in output power. Hence real time monitoring of current (I, di/dt) for each solar module and bypass diode in the SPV array is necessary. In addition temperature sensors are required to monitor open-circuit voltage (Voc) fluctuations. Previously, we have demonstrated optimization of an SPV array in BRIGHT and DARK state [1]. However in field testing we have observed an intermediate GREY state as well. The power output can be depressed in a string having multiple state modules in series. In this paper we have proposed a reconfiguration strategy whereby modules are categorized into BRIGHT, GREY, and DARK illumination states. Based on this strategy it has been demonstrated that a reconfigured SPV array will yield maximum power at the highest operating voltage.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"26 1","pages":"106-109"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85429433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260966
Roderik Hoppener, Ronald van Olmen, Martin De Moya, Joze Stupar
An overview of the state of the art LTCC process, technology and its applications will be presented. LTCC integrated electronic circuit technology is currently developing rapidly into new areas. Well known for its robustness and suitability for high frequency circuits, LTCC is now developing into new applications such as MEMS sensors and actuators. New possibilities are created by 3D fluidic integration for sensors and micro reactors. With ever increasing requirements for miniaturisation, optimized processing methods have been developed. The new LTCC processing methods enable higher accuracies of the produced parts while facilitating the incorporation of 3D channels in production environments. The higher accuracy methods however also put constraints on the properties of the materials used making it necessary to choose the correct process and material for its application.
{"title":"Overview and innovations in LTCC manufacturing for 3D, sensors and MEMS applications","authors":"Roderik Hoppener, Ronald van Olmen, Martin De Moya, Joze Stupar","doi":"10.1109/ISPTS.2012.6260966","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260966","url":null,"abstract":"An overview of the state of the art LTCC process, technology and its applications will be presented. LTCC integrated electronic circuit technology is currently developing rapidly into new areas. Well known for its robustness and suitability for high frequency circuits, LTCC is now developing into new applications such as MEMS sensors and actuators. New possibilities are created by 3D fluidic integration for sensors and micro reactors. With ever increasing requirements for miniaturisation, optimized processing methods have been developed. The new LTCC processing methods enable higher accuracies of the produced parts while facilitating the incorporation of 3D channels in production environments. The higher accuracy methods however also put constraints on the properties of the materials used making it necessary to choose the correct process and material for its application.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"31 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86924708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260959
R. A. Mishra, Narendra B. Raut
The output of transducers which are used in physiological measuring is observed to be nonlinear. This nonlinear characteristic of transducers fails to measure the actual value of physiological parameter like temperature, pulse rate, heart beats, etc. the researcher has developed the body temperature measuring transducer using time base oscillating circuit and thermister as temperature sensing element. The time base circuit, phototransistor and LED are used for designing quick recovery heart beat sensor. The design technique of these transducers, their characteristics and comparisons with existing sensors in similar kind of biomedical instruments is discussed in this paper.
{"title":"Solid state sensors for biomedical instruments","authors":"R. A. Mishra, Narendra B. Raut","doi":"10.1109/ISPTS.2012.6260959","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260959","url":null,"abstract":"The output of transducers which are used in physiological measuring is observed to be nonlinear. This nonlinear characteristic of transducers fails to measure the actual value of physiological parameter like temperature, pulse rate, heart beats, etc. the researcher has developed the body temperature measuring transducer using time base oscillating circuit and thermister as temperature sensing element. The time base circuit, phototransistor and LED are used for designing quick recovery heart beat sensor. The design technique of these transducers, their characteristics and comparisons with existing sensors in similar kind of biomedical instruments is discussed in this paper.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"61 1","pages":"326-329"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76525185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260937
J. Kalambe, R. Patrikar
Recently, an all polymer system based biosensor with integrated optical read-out has been developed. Optical detection techniques are perhaps the most common due to their prevalent use in biology and life sciences. Fluorescence-based detection in Bio-MEMS has been applied to detection of cells within micro-chips, using antibody-based assays. Majority of the detection schemes in microarray and numerous lab-on-a-chip devices and applications utilize optical detection schemes. For size shrinkage, and to reduce the hardware we proposed the new read-out method which utilize the electrical detection method. The paper present design and analysis of microcantilever based biosensor based with electrical read-out method. This method is ideal for the manufacture of low cost disease diagnostic Kits. The sensor structure is designed and simulated using Coventorware software. The corresponding deflection with respect to voltage and stress is analyzed. To solve the fabrication process related issue of the sensor control circuit has been designed and tested using Spartan II-FPGA Kit & PCB. The reliability issues of the sensor are also studied.
{"title":"Microcantilever based biosensor with electrical read-out method","authors":"J. Kalambe, R. Patrikar","doi":"10.1109/ISPTS.2012.6260937","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260937","url":null,"abstract":"Recently, an all polymer system based biosensor with integrated optical read-out has been developed. Optical detection techniques are perhaps the most common due to their prevalent use in biology and life sciences. Fluorescence-based detection in Bio-MEMS has been applied to detection of cells within micro-chips, using antibody-based assays. Majority of the detection schemes in microarray and numerous lab-on-a-chip devices and applications utilize optical detection schemes. For size shrinkage, and to reduce the hardware we proposed the new read-out method which utilize the electrical detection method. The paper present design and analysis of microcantilever based biosensor based with electrical read-out method. This method is ideal for the manufacture of low cost disease diagnostic Kits. The sensor structure is designed and simulated using Coventorware software. The corresponding deflection with respect to voltage and stress is analyzed. To solve the fabrication process related issue of the sensor control circuit has been designed and tested using Spartan II-FPGA Kit & PCB. The reliability issues of the sensor are also studied.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"108 1","pages":"249-252"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75926468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260881
S. Premkumar, S. Shinde, H. H. Kumar, D. K. Kharat
Many actuator applications require high resolution, accuracy and fast response time. Piezoelectric multi-layer actuators are used for such applications to manage displacements from nanometer to micrometer range and the response time in microseconds at comparatively low drive voltages. This paper deals with the characterization of lead zirconate titanate (PZT) ceramic multilayer actuators fabricated by tape casting method utilizing impedance analysis and strain measurements. Width mode resonance frequency is predicted using finite element analysis. The electrical impedance spectrums in the frequency range 100 kHz to 250 kHz of PZT multilayers show a small change in resonant behavior. Possible reasons for this change are discussed. Presence of defect in the multi-layer actuator is validated by optical microscopy. The results also show the displacement response at 75V of defect free PZT multilayer actuator.
{"title":"Characterization of PZT multi-layer actuator","authors":"S. Premkumar, S. Shinde, H. H. Kumar, D. K. Kharat","doi":"10.1109/ISPTS.2012.6260881","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260881","url":null,"abstract":"Many actuator applications require high resolution, accuracy and fast response time. Piezoelectric multi-layer actuators are used for such applications to manage displacements from nanometer to micrometer range and the response time in microseconds at comparatively low drive voltages. This paper deals with the characterization of lead zirconate titanate (PZT) ceramic multilayer actuators fabricated by tape casting method utilizing impedance analysis and strain measurements. Width mode resonance frequency is predicted using finite element analysis. The electrical impedance spectrums in the frequency range 100 kHz to 250 kHz of PZT multilayers show a small change in resonant behavior. Possible reasons for this change are discussed. Presence of defect in the multi-layer actuator is validated by optical microscopy. The results also show the displacement response at 75V of defect free PZT multilayer actuator.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"43 1","pages":"67-69"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73806563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260861
P. S. Shewale, M. Uplane
Transparent conducting fluorine-doped tin oxide (FTO) thin films were prepared onto glass at low substrate temperature by an advanced spray pyrolysis technique, with stannic chloride and ammonium fluoride as precursors. The films were grown at different substrate temperatures varied in the range of 250–340°C. The effect of the substrate temperature on the structural, morphological, and hydrogen sulphide (H2S) gas sensing properties of the films has been investigated. XRD studies confirm tetragonal crystal structure of the films and all the films are found to be polycrystalline in nature. The FTO film prepared at 250°C exhibits the maximum sensitivity (∼ 10 %) at 250°C operating temperature. Further, the effect of palladium sensitization on the H2S sensing properties of the 250°C sample has been studied and an enhanced sensing response was obtained.
{"title":"Gas sensing properties of the fluorine-doped tin oxide thin films Prepared by advanced spray pyrolysis","authors":"P. S. Shewale, M. Uplane","doi":"10.1109/ISPTS.2012.6260861","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260861","url":null,"abstract":"Transparent conducting fluorine-doped tin oxide (FTO) thin films were prepared onto glass at low substrate temperature by an advanced spray pyrolysis technique, with stannic chloride and ammonium fluoride as precursors. The films were grown at different substrate temperatures varied in the range of 250–340°C. The effect of the substrate temperature on the structural, morphological, and hydrogen sulphide (H2S) gas sensing properties of the films has been investigated. XRD studies confirm tetragonal crystal structure of the films and all the films are found to be polycrystalline in nature. The FTO film prepared at 250°C exhibits the maximum sensitivity (∼ 10 %) at 250°C operating temperature. Further, the effect of palladium sensitization on the H2S sensing properties of the 250°C sample has been studied and an enhanced sensing response was obtained.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"37 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72679775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260954
Sandhya Kulkarni, R. Damle, B. Nagabhushana, Narsimha Parvatikar
The nano-ceramic perovskite oxide Wollastonite (β-CaSiO3) doped with rare earth (RE) ions Eu3+and Sm3+ were synthesized by Low temperature solution combustion method, characterized by Powder XRD (X-ray Diffraction), FTIR(Fourier Transform Infrared Spectroscopy). The XRD studies revealed that there is a phase transition from β- to α-phase on doping with rare earth ions. The FTIR results showed that there is a dramatic stress on the Si-O bonds due to the effect produced by means of A-site vacancies resulted, on substitution of Eu3+ and Sm3+ in Ca2+ site. The particle size was estimated by TEM (Transmission Electron Microscopy), it was compared with the size determined by Scherrer's formula. The SEM (Scanning Electron Microscopy) of β-CaSiO3 shows that it is a porous material containing agglomerated nanoparticles. The dielectric measurements for lower frequencies (102 Hz–106 Hz) were performed for the undoped as well as doped with Eu3+ (3 mole %) and Sm3+(4 mole %). The measurements revealed that the undoped β-CaSiO3 shows high dielectric constant (54) and low dielectric loss (0.03) and low value of dielectric conductivity (of the order of 10–7mho cm) at 1MHz.frequency. However the dielectric constant (66) increased and dielectric loss (0.008) decreased by doping with the rare earth elements of atomic radii smaller than that of Calcium and an unusual observation is that the dielectric constant, dielectric loss and dielectric conductivity become equalized when β-CaSiO3 was doped with 3 mole% Eu3+ and 4 mole% Sm3+.
{"title":"Effect of RE3+ (RE = Eu, Sm) ion doping on dielectric properties of nano-wollastonite synthesized by combustion method","authors":"Sandhya Kulkarni, R. Damle, B. Nagabhushana, Narsimha Parvatikar","doi":"10.1109/ISPTS.2012.6260954","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260954","url":null,"abstract":"The nano-ceramic perovskite oxide Wollastonite (β-CaSiO<inf>3</inf>) doped with rare earth (RE) ions Eu<sup>3+</sup>and Sm<sup>3+</sup> were synthesized by Low temperature solution combustion method, characterized by Powder XRD (X-ray Diffraction), FTIR(Fourier Transform Infrared Spectroscopy). The XRD studies revealed that there is a phase transition from β- to α-phase on doping with rare earth ions. The FTIR results showed that there is a dramatic stress on the Si-O bonds due to the effect produced by means of A-site vacancies resulted, on substitution of Eu<sup>3+</sup> and Sm<sup>3+</sup> in Ca2+ site. The particle size was estimated by TEM (Transmission Electron Microscopy), it was compared with the size determined by Scherrer's formula. The SEM (Scanning Electron Microscopy) of β-CaSiO<inf>3</inf> shows that it is a porous material containing agglomerated nanoparticles. The dielectric measurements for lower frequencies (10<sup>2</sup> Hz–10<sup>6</sup> Hz) were performed for the undoped as well as doped with Eu<sup>3+</sup> (3 mole %) and Sm<sup>3+</sup>(4 mole %). The measurements revealed that the undoped β-CaSiO<inf>3</inf> shows high dielectric constant (54) and low dielectric loss (0.03) and low value of dielectric conductivity (of the order of 10–7mho cm) at 1MHz.frequency. However the dielectric constant (66) increased and dielectric loss (0.008) decreased by doping with the rare earth elements of atomic radii smaller than that of Calcium and an unusual observation is that the dielectric constant, dielectric loss and dielectric conductivity become equalized when β-CaSiO<inf>3</inf> was doped with 3 mole% Eu<sup>3+</sup> and 4 mole% Sm<sup>3+</sup>.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"109 1","pages":"305-310"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73679445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260939
M. Shyamsunder
The industrial world continues to demand greater efficiency and effectiveness from the inspection processes using Nondestructive Evaluation (NDE) techniques. NDE sensors form the heart of any inspection system and could be one of the most important contributor to effective and reliable inspections in the industrial world. One important and frequently adopted approach by researchers in the NDE community is to innovate in the NDE sensors area. The industrial world of engineering structures and components is reasonably complex and extremely broad in terms of materials used, shapes, designs, defects to be detected, operating conditions, etc. The reasons for focusing on the sensors side is multifold; most important being the fact that in the entire system, it is the closest in proximity to the object being inspected and thus can contribute significantly. In addition many of the advances taking place in a host of enabling technologies such as electronics, communication, signal processing, computers, manufacturing, modeling/simulation tools, etc, have accelerated and motivated the design and development of new NDE sensors which can meet today's tough demands.
{"title":"Advances and challenges in NDE sensors","authors":"M. Shyamsunder","doi":"10.1109/ISPTS.2012.6260939","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260939","url":null,"abstract":"The industrial world continues to demand greater efficiency and effectiveness from the inspection processes using Nondestructive Evaluation (NDE) techniques. NDE sensors form the heart of any inspection system and could be one of the most important contributor to effective and reliable inspections in the industrial world. One important and frequently adopted approach by researchers in the NDE community is to innovate in the NDE sensors area. The industrial world of engineering structures and components is reasonably complex and extremely broad in terms of materials used, shapes, designs, defects to be detected, operating conditions, etc. The reasons for focusing on the sensors side is multifold; most important being the fact that in the entire system, it is the closest in proximity to the object being inspected and thus can contribute significantly. In addition many of the advances taking place in a host of enabling technologies such as electronics, communication, signal processing, computers, manufacturing, modeling/simulation tools, etc, have accelerated and motivated the design and development of new NDE sensors which can meet today's tough demands.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"32 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74566555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260905
S. Ovhal, P. Thakur
Heterogeneous photocatalysis using nanostructured semiconductors constitute one of the emerging advanced oxidation processes (AOP) for destructive oxidation of organic contaminants in water or air. Water and wastewater treatment is a matter of global concern. With more stringent control measures being imposed to protect the source of fresh water it is imperative for the industries to bring down the concentration of hazardous pollutants in their effluents to the permissible level by adequate treatment. Water reuse and recycle has therefore acquired a great importance as the availability of fresh water will control our economic growth more than anything else, since it is basic need of life and has no substitute. The present day wastewater treatment plant for industries as well as domestic water purifiers are mostly using primary and secondary treatment processes. However, in order to comply with the stringent environmental norms more efficient treatment will be required and addition of tertiary treatment step like heterogeneous photocatalysis which ensure the complete mineralization of pollutants has thus become necessary.TiO2 is the most used photocatalyst because of its high efficiency, nontoxicity, chemical and biological stability, and low cost. Herein we report the photocatalytic applications of prepared rutile Titanium Dioxide Nanoparticles, prepared by reverse microemulsion process using a non-ionic surfactant Triton X-100 as a template at room temperature. The as synthesized TiO2 samples were characterized by XRD, FTIR, BET, SEM and TEM. X-ray diffraction study shows pure rutile TiO2 Nanopatricles. TEM image shows spherical TiO2 Nanoparicles having average size 57 nm. As prepared rutile TiO2 sample were used for the photocatalytic degradations of Methylene Blue Dye, Rhodamine B Dye and p-Nitrophenol. % COD reduction shows 83% degradation for Methylene Blue, 84% for Rhodamine B and 76% for p-Nitrophenol within 150 min only. The photocatalytic reaction shows first order kinetics.
{"title":"Photocatalytic applications of room temperature rutile TiO2 nanoparticles","authors":"S. Ovhal, P. Thakur","doi":"10.1109/ISPTS.2012.6260905","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260905","url":null,"abstract":"Heterogeneous photocatalysis using nanostructured semiconductors constitute one of the emerging advanced oxidation processes (AOP) for destructive oxidation of organic contaminants in water or air. Water and wastewater treatment is a matter of global concern. With more stringent control measures being imposed to protect the source of fresh water it is imperative for the industries to bring down the concentration of hazardous pollutants in their effluents to the permissible level by adequate treatment. Water reuse and recycle has therefore acquired a great importance as the availability of fresh water will control our economic growth more than anything else, since it is basic need of life and has no substitute. The present day wastewater treatment plant for industries as well as domestic water purifiers are mostly using primary and secondary treatment processes. However, in order to comply with the stringent environmental norms more efficient treatment will be required and addition of tertiary treatment step like heterogeneous photocatalysis which ensure the complete mineralization of pollutants has thus become necessary.TiO2 is the most used photocatalyst because of its high efficiency, nontoxicity, chemical and biological stability, and low cost. Herein we report the photocatalytic applications of prepared rutile Titanium Dioxide Nanoparticles, prepared by reverse microemulsion process using a non-ionic surfactant Triton X-100 as a template at room temperature. The as synthesized TiO2 samples were characterized by XRD, FTIR, BET, SEM and TEM. X-ray diffraction study shows pure rutile TiO2 Nanopatricles. TEM image shows spherical TiO2 Nanoparicles having average size 57 nm. As prepared rutile TiO2 sample were used for the photocatalytic degradations of Methylene Blue Dye, Rhodamine B Dye and p-Nitrophenol. % COD reduction shows 83% degradation for Methylene Blue, 84% for Rhodamine B and 76% for p-Nitrophenol within 150 min only. The photocatalytic reaction shows first order kinetics.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"8 1","pages":"149-152"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81574524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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