Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260949
Sugato Ghosh, S. Chatterjee, A. Kundu, S. Maity, H. Saha
A cantilever type microheater array consisting of four individual isolated microheaters on single die has been designed here for MEMS based gas sensor platform using metal oxide semiconductor for different gas detection through a single sensor die for explosive and toxic gas analysis in the underground manhole. A thin SiO2/Si3N4 cantilever of 250µn X 100µn has been designed here for low power consumption and uniform temperature distribution throughout the entire active area. As the microheaters are isolated from each other, different temperatures may be achieved by applying different voltages in different heaters.
针对基于金属氧化物半导体的MEMS气体传感器平台，设计了一种由4个独立微加热器组成的悬臂式微加热器阵列，通过单个传感器模块对井下爆炸和有毒气体进行检测。在这里设计了250µn X 100µn的薄SiO2/Si3N4悬臂梁，在整个活动区域内具有低功耗和均匀的温度分布。由于微加热器彼此隔离，在不同的加热器上施加不同的电压可以达到不同的温度。
{"title":"Thermal analysis of cantilever MEMS based Low power microheater array for the selective detection of explosive and toxic gases","authors":"Sugato Ghosh, S. Chatterjee, A. Kundu, S. Maity, H. Saha","doi":"10.1109/ISPTS.2012.6260949","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260949","url":null,"abstract":"A cantilever type microheater array consisting of four individual isolated microheaters on single die has been designed here for MEMS based gas sensor platform using metal oxide semiconductor for different gas detection through a single sensor die for explosive and toxic gas analysis in the underground manhole. A thin SiO2/Si3N4 cantilever of 250µn X 100µn has been designed here for low power consumption and uniform temperature distribution throughout the entire active area. As the microheaters are isolated from each other, different temperatures may be achieved by applying different voltages in different heaters.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"3 1","pages":"290-293"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87822575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260966
Roderik Hoppener, Ronald van Olmen, Martin De Moya, Joze Stupar
An overview of the state of the art LTCC process, technology and its applications will be presented. LTCC integrated electronic circuit technology is currently developing rapidly into new areas. Well known for its robustness and suitability for high frequency circuits, LTCC is now developing into new applications such as MEMS sensors and actuators. New possibilities are created by 3D fluidic integration for sensors and micro reactors. With ever increasing requirements for miniaturisation, optimized processing methods have been developed. The new LTCC processing methods enable higher accuracies of the produced parts while facilitating the incorporation of 3D channels in production environments. The higher accuracy methods however also put constraints on the properties of the materials used making it necessary to choose the correct process and material for its application.
{"title":"Overview and innovations in LTCC manufacturing for 3D, sensors and MEMS applications","authors":"Roderik Hoppener, Ronald van Olmen, Martin De Moya, Joze Stupar","doi":"10.1109/ISPTS.2012.6260966","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260966","url":null,"abstract":"An overview of the state of the art LTCC process, technology and its applications will be presented. LTCC integrated electronic circuit technology is currently developing rapidly into new areas. Well known for its robustness and suitability for high frequency circuits, LTCC is now developing into new applications such as MEMS sensors and actuators. New possibilities are created by 3D fluidic integration for sensors and micro reactors. With ever increasing requirements for miniaturisation, optimized processing methods have been developed. The new LTCC processing methods enable higher accuracies of the produced parts while facilitating the incorporation of 3D channels in production environments. The higher accuracy methods however also put constraints on the properties of the materials used making it necessary to choose the correct process and material for its application.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"31 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86924708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260877
P.S Soumya, K. Surabhi, V. Krishnappa, G. Miranda, N. D. Dushyantha
This paper is an attempt to establish a procedure for 2D quantization of a flaw. In this study, Tin (Sn) a regularly occurring flaw in structural Steel is considered. Using COMSOL 4.2, a 2D transient pressure acoustic model is created, which consists of a 70mm×70mm structural Steel plate with four acoustic transceivers 90 degree apart (each providing 5cycles of 1Mhz sequential sinusoidal excitation) placed along its perfectly reflecting boundary. The signals obtained from the transceivers are post processed using FFT techniques and are further processed for image reconstruction. From the statistical analysis the position of the flaw is determined. The mean deviation from the actual central location of the flaw to the predicted location is (1.136mm, 0.979mm).
{"title":"Investigation of acoustic structure interaction for flawed structure","authors":"P.S Soumya, K. Surabhi, V. Krishnappa, G. Miranda, N. D. Dushyantha","doi":"10.1109/ISPTS.2012.6260877","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260877","url":null,"abstract":"This paper is an attempt to establish a procedure for 2D quantization of a flaw. In this study, Tin (Sn) a regularly occurring flaw in structural Steel is considered. Using COMSOL 4.2, a 2D transient pressure acoustic model is created, which consists of a 70mm×70mm structural Steel plate with four acoustic transceivers 90 degree apart (each providing 5cycles of 1Mhz sequential sinusoidal excitation) placed along its perfectly reflecting boundary. The signals obtained from the transceivers are post processed using FFT techniques and are further processed for image reconstruction. From the statistical analysis the position of the flaw is determined. The mean deviation from the actual central location of the flaw to the predicted location is (1.136mm, 0.979mm).","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"22 1","pages":"55-58"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89159180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260892
B. Patnaik, J. Mohod, S. Duttagupta
In a solar photovoltaic (SPV) array [mxn] the solar modules are connected in series and parallel to achieve desired power output. The SPV array performance depends on different parameters such as incident insolation, temperature, array layout, shading etc. Shading due to cloud cover results in Non-Uniform Illumination (NUI STATES- BRIGHT, GREY and DARK). Mismatch in currents and voltages of the modules due to change in one or more parameters leads to loss in output power. Hence real time monitoring of current (I, di/dt) for each solar module and bypass diode in the SPV array is necessary. In addition temperature sensors are required to monitor open-circuit voltage (Voc) fluctuations. Previously, we have demonstrated optimization of an SPV array in BRIGHT and DARK state [1]. However in field testing we have observed an intermediate GREY state as well. The power output can be depressed in a string having multiple state modules in series. In this paper we have proposed a reconfiguration strategy whereby modules are categorized into BRIGHT, GREY, and DARK illumination states. Based on this strategy it has been demonstrated that a reconfigured SPV array will yield maximum power at the highest operating voltage.
{"title":"Distributed multi-sensor network for real time monitoring of illumination states for a reconfigurable solar photovoltaic array","authors":"B. Patnaik, J. Mohod, S. Duttagupta","doi":"10.1109/ISPTS.2012.6260892","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260892","url":null,"abstract":"In a solar photovoltaic (SPV) array [mxn] the solar modules are connected in series and parallel to achieve desired power output. The SPV array performance depends on different parameters such as incident insolation, temperature, array layout, shading etc. Shading due to cloud cover results in Non-Uniform Illumination (NUI STATES- BRIGHT, GREY and DARK). Mismatch in currents and voltages of the modules due to change in one or more parameters leads to loss in output power. Hence real time monitoring of current (I, di/dt) for each solar module and bypass diode in the SPV array is necessary. In addition temperature sensors are required to monitor open-circuit voltage (Voc) fluctuations. Previously, we have demonstrated optimization of an SPV array in BRIGHT and DARK state [1]. However in field testing we have observed an intermediate GREY state as well. The power output can be depressed in a string having multiple state modules in series. In this paper we have proposed a reconfiguration strategy whereby modules are categorized into BRIGHT, GREY, and DARK illumination states. Based on this strategy it has been demonstrated that a reconfigured SPV array will yield maximum power at the highest operating voltage.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"26 1","pages":"106-109"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85429433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260881
S. Premkumar, S. Shinde, H. H. Kumar, D. K. Kharat
Many actuator applications require high resolution, accuracy and fast response time. Piezoelectric multi-layer actuators are used for such applications to manage displacements from nanometer to micrometer range and the response time in microseconds at comparatively low drive voltages. This paper deals with the characterization of lead zirconate titanate (PZT) ceramic multilayer actuators fabricated by tape casting method utilizing impedance analysis and strain measurements. Width mode resonance frequency is predicted using finite element analysis. The electrical impedance spectrums in the frequency range 100 kHz to 250 kHz of PZT multilayers show a small change in resonant behavior. Possible reasons for this change are discussed. Presence of defect in the multi-layer actuator is validated by optical microscopy. The results also show the displacement response at 75V of defect free PZT multilayer actuator.
{"title":"Characterization of PZT multi-layer actuator","authors":"S. Premkumar, S. Shinde, H. H. Kumar, D. K. Kharat","doi":"10.1109/ISPTS.2012.6260881","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260881","url":null,"abstract":"Many actuator applications require high resolution, accuracy and fast response time. Piezoelectric multi-layer actuators are used for such applications to manage displacements from nanometer to micrometer range and the response time in microseconds at comparatively low drive voltages. This paper deals with the characterization of lead zirconate titanate (PZT) ceramic multilayer actuators fabricated by tape casting method utilizing impedance analysis and strain measurements. Width mode resonance frequency is predicted using finite element analysis. The electrical impedance spectrums in the frequency range 100 kHz to 250 kHz of PZT multilayers show a small change in resonant behavior. Possible reasons for this change are discussed. Presence of defect in the multi-layer actuator is validated by optical microscopy. The results also show the displacement response at 75V of defect free PZT multilayer actuator.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"43 1","pages":"67-69"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73806563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260919
C. Prakash
Electroceramics is a class of very important and versatile ceramic materials whose electrical properties are exploited to make devices for a number of advanced applications for civil and military use. These materials include: ferrites, ferroelectrics, piezoelectrics, pyroelectrics, microwave dielectrics etc. Their physical and chemical properties are sensitive to a change in the environment such as temperature, pressure, electric field, magnetic field etc. They form essential component of any smart system. Most of the practical applications are based on bulk ceramics. A material can be tailored by suitable substitutions to get desired characteristics to meet specific requirements. Though the material properties are predominantly governed by composition, processing methodology plays an important role to control material performance and thus optimization of processing parameters become very crucial. Here development of microwave ferrites and dielectrics for phase shifters, prizoelectrics for actuator applications and pyroelectrics for IR detectors are described. Some of the novel material processing techniques shall also be presented.
{"title":"Electroceramics for sensors and actuators","authors":"C. Prakash","doi":"10.1109/ISPTS.2012.6260919","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260919","url":null,"abstract":"Electroceramics is a class of very important and versatile ceramic materials whose electrical properties are exploited to make devices for a number of advanced applications for civil and military use. These materials include: ferrites, ferroelectrics, piezoelectrics, pyroelectrics, microwave dielectrics etc. Their physical and chemical properties are sensitive to a change in the environment such as temperature, pressure, electric field, magnetic field etc. They form essential component of any smart system. Most of the practical applications are based on bulk ceramics. A material can be tailored by suitable substitutions to get desired characteristics to meet specific requirements. Though the material properties are predominantly governed by composition, processing methodology plays an important role to control material performance and thus optimization of processing parameters become very crucial. Here development of microwave ferrites and dielectrics for phase shifters, prizoelectrics for actuator applications and pyroelectrics for IR detectors are described. Some of the novel material processing techniques shall also be presented.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"38 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83487277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260861
P. S. Shewale, M. Uplane
Transparent conducting fluorine-doped tin oxide (FTO) thin films were prepared onto glass at low substrate temperature by an advanced spray pyrolysis technique, with stannic chloride and ammonium fluoride as precursors. The films were grown at different substrate temperatures varied in the range of 250–340°C. The effect of the substrate temperature on the structural, morphological, and hydrogen sulphide (H2S) gas sensing properties of the films has been investigated. XRD studies confirm tetragonal crystal structure of the films and all the films are found to be polycrystalline in nature. The FTO film prepared at 250°C exhibits the maximum sensitivity (∼ 10 %) at 250°C operating temperature. Further, the effect of palladium sensitization on the H2S sensing properties of the 250°C sample has been studied and an enhanced sensing response was obtained.
{"title":"Gas sensing properties of the fluorine-doped tin oxide thin films Prepared by advanced spray pyrolysis","authors":"P. S. Shewale, M. Uplane","doi":"10.1109/ISPTS.2012.6260861","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260861","url":null,"abstract":"Transparent conducting fluorine-doped tin oxide (FTO) thin films were prepared onto glass at low substrate temperature by an advanced spray pyrolysis technique, with stannic chloride and ammonium fluoride as precursors. The films were grown at different substrate temperatures varied in the range of 250–340°C. The effect of the substrate temperature on the structural, morphological, and hydrogen sulphide (H2S) gas sensing properties of the films has been investigated. XRD studies confirm tetragonal crystal structure of the films and all the films are found to be polycrystalline in nature. The FTO film prepared at 250°C exhibits the maximum sensitivity (∼ 10 %) at 250°C operating temperature. Further, the effect of palladium sensitization on the H2S sensing properties of the 250°C sample has been studied and an enhanced sensing response was obtained.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"37 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72679775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260868
P. Das, G. Singh
Copper substituted NiZn ferrite powder of a chemical formula Ni0.5−xCuxZn0.5Fe2O4 (0≤ × ≤0.3) is synthesized by auto combustion process at 350°C followed by the calcination at 600, 900 and 1000°C for 2h. The derived powder shows well distinct total seven peaks of cubic spinel structure with space group Fdℨ̅m. The considerable increments in the lattice constant and the reduction in an average crystallite sizes are observed with increasing the Cu content. At the optimal condition of x = 0.1, the crystallite size as small as 26 nm and the coercivity as high as 158 Oe is obtained in samples calcined at 600°C. The dielectric (έ, ε″, and tanδ) analyses show the frequency sensitive behavior in the low frequency region and the frequency independent characteristics at high frequency side due to the Maxwell-Wagner type of interfacial polarization and also due to hopping of charges between Fe2+ ↔Fe3+. The highest dielectric constant ∼ 48 at 1 kHz and the lowest dielectric loss ∼ 0.06 at 4 MHz are obtained in the studied frequency range, whereas the maximum frequency sensing response ∼ 92% is observed at 4 MHz in same sample.
{"title":"Structural, magnetic and dielectric properties in Cu substituted Ni-Zn ferrite for sensors applications","authors":"P. Das, G. Singh","doi":"10.1109/ISPTS.2012.6260868","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260868","url":null,"abstract":"Copper substituted NiZn ferrite powder of a chemical formula Ni<inf>0.5−x</inf>Cu<inf>x</inf>Zn<inf>0.5</inf>Fe<inf>2</inf>O<inf>4</inf> (0≤ × ≤0.3) is synthesized by auto combustion process at 350°C followed by the calcination at 600, 900 and 1000°C for 2h. The derived powder shows well distinct total seven peaks of cubic spinel structure with space group Fdℨ̅m. The considerable increments in the lattice constant and the reduction in an average crystallite sizes are observed with increasing the Cu content. At the optimal condition of x = 0.1, the crystallite size as small as 26 nm and the coercivity as high as 158 Oe is obtained in samples calcined at 600°C. The dielectric (έ, ε″, and tanδ) analyses show the frequency sensitive behavior in the low frequency region and the frequency independent characteristics at high frequency side due to the Maxwell-Wagner type of interfacial polarization and also due to hopping of charges between Fe<sup>2+</sup> ↔Fe3<sup>+</sup>. The highest dielectric constant ∼ 48 at 1 kHz and the lowest dielectric loss ∼ 0.06 at 4 MHz are obtained in the studied frequency range, whereas the maximum frequency sensing response ∼ 92% is observed at 4 MHz in same sample.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"3 1","pages":"29-32"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74351939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260939
M. Shyamsunder
The industrial world continues to demand greater efficiency and effectiveness from the inspection processes using Nondestructive Evaluation (NDE) techniques. NDE sensors form the heart of any inspection system and could be one of the most important contributor to effective and reliable inspections in the industrial world. One important and frequently adopted approach by researchers in the NDE community is to innovate in the NDE sensors area. The industrial world of engineering structures and components is reasonably complex and extremely broad in terms of materials used, shapes, designs, defects to be detected, operating conditions, etc. The reasons for focusing on the sensors side is multifold; most important being the fact that in the entire system, it is the closest in proximity to the object being inspected and thus can contribute significantly. In addition many of the advances taking place in a host of enabling technologies such as electronics, communication, signal processing, computers, manufacturing, modeling/simulation tools, etc, have accelerated and motivated the design and development of new NDE sensors which can meet today's tough demands.
{"title":"Advances and challenges in NDE sensors","authors":"M. Shyamsunder","doi":"10.1109/ISPTS.2012.6260939","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260939","url":null,"abstract":"The industrial world continues to demand greater efficiency and effectiveness from the inspection processes using Nondestructive Evaluation (NDE) techniques. NDE sensors form the heart of any inspection system and could be one of the most important contributor to effective and reliable inspections in the industrial world. One important and frequently adopted approach by researchers in the NDE community is to innovate in the NDE sensors area. The industrial world of engineering structures and components is reasonably complex and extremely broad in terms of materials used, shapes, designs, defects to be detected, operating conditions, etc. The reasons for focusing on the sensors side is multifold; most important being the fact that in the entire system, it is the closest in proximity to the object being inspected and thus can contribute significantly. In addition many of the advances taking place in a host of enabling technologies such as electronics, communication, signal processing, computers, manufacturing, modeling/simulation tools, etc, have accelerated and motivated the design and development of new NDE sensors which can meet today's tough demands.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"32 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74566555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-03-07DOI: 10.1109/ISPTS.2012.6260954
Sandhya Kulkarni, R. Damle, B. Nagabhushana, Narsimha Parvatikar
The nano-ceramic perovskite oxide Wollastonite (β-CaSiO3) doped with rare earth (RE) ions Eu3+and Sm3+ were synthesized by Low temperature solution combustion method, characterized by Powder XRD (X-ray Diffraction), FTIR(Fourier Transform Infrared Spectroscopy). The XRD studies revealed that there is a phase transition from β- to α-phase on doping with rare earth ions. The FTIR results showed that there is a dramatic stress on the Si-O bonds due to the effect produced by means of A-site vacancies resulted, on substitution of Eu3+ and Sm3+ in Ca2+ site. The particle size was estimated by TEM (Transmission Electron Microscopy), it was compared with the size determined by Scherrer's formula. The SEM (Scanning Electron Microscopy) of β-CaSiO3 shows that it is a porous material containing agglomerated nanoparticles. The dielectric measurements for lower frequencies (102 Hz–106 Hz) were performed for the undoped as well as doped with Eu3+ (3 mole %) and Sm3+(4 mole %). The measurements revealed that the undoped β-CaSiO3 shows high dielectric constant (54) and low dielectric loss (0.03) and low value of dielectric conductivity (of the order of 10–7mho cm) at 1MHz.frequency. However the dielectric constant (66) increased and dielectric loss (0.008) decreased by doping with the rare earth elements of atomic radii smaller than that of Calcium and an unusual observation is that the dielectric constant, dielectric loss and dielectric conductivity become equalized when β-CaSiO3 was doped with 3 mole% Eu3+ and 4 mole% Sm3+.
{"title":"Effect of RE3+ (RE = Eu, Sm) ion doping on dielectric properties of nano-wollastonite synthesized by combustion method","authors":"Sandhya Kulkarni, R. Damle, B. Nagabhushana, Narsimha Parvatikar","doi":"10.1109/ISPTS.2012.6260954","DOIUrl":"https://doi.org/10.1109/ISPTS.2012.6260954","url":null,"abstract":"The nano-ceramic perovskite oxide Wollastonite (β-CaSiO<inf>3</inf>) doped with rare earth (RE) ions Eu<sup>3+</sup>and Sm<sup>3+</sup> were synthesized by Low temperature solution combustion method, characterized by Powder XRD (X-ray Diffraction), FTIR(Fourier Transform Infrared Spectroscopy). The XRD studies revealed that there is a phase transition from β- to α-phase on doping with rare earth ions. The FTIR results showed that there is a dramatic stress on the Si-O bonds due to the effect produced by means of A-site vacancies resulted, on substitution of Eu<sup>3+</sup> and Sm<sup>3+</sup> in Ca2+ site. The particle size was estimated by TEM (Transmission Electron Microscopy), it was compared with the size determined by Scherrer's formula. The SEM (Scanning Electron Microscopy) of β-CaSiO<inf>3</inf> shows that it is a porous material containing agglomerated nanoparticles. The dielectric measurements for lower frequencies (10<sup>2</sup> Hz–10<sup>6</sup> Hz) were performed for the undoped as well as doped with Eu<sup>3+</sup> (3 mole %) and Sm<sup>3+</sup>(4 mole %). The measurements revealed that the undoped β-CaSiO<inf>3</inf> shows high dielectric constant (54) and low dielectric loss (0.03) and low value of dielectric conductivity (of the order of 10–7mho cm) at 1MHz.frequency. However the dielectric constant (66) increased and dielectric loss (0.008) decreased by doping with the rare earth elements of atomic radii smaller than that of Calcium and an unusual observation is that the dielectric constant, dielectric loss and dielectric conductivity become equalized when β-CaSiO<inf>3</inf> was doped with 3 mole% Eu<sup>3+</sup> and 4 mole% Sm<sup>3+</sup>.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"109 1","pages":"305-310"},"PeriodicalIF":0.0,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73679445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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