Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147364
A. Knauer, R. Staske, J. Krausslich, R. Kittner
Precision lattice parameter and photoluminescence measurements of InP substrates and InP/InGaAsP double heterostructures (DHSs) are presented. The measurements show a lattice dilatation in a region with enriched free carrier concentration achieved by using strong n-type doped InP substrates of
{"title":"Influence of lattice parameter variations across n-InP-substrates on a complex of material properties of InP/InGaAsP-DHS","authors":"A. Knauer, R. Staske, J. Krausslich, R. Kittner","doi":"10.1109/ICIPRM.1991.147364","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147364","url":null,"abstract":"Precision lattice parameter and photoluminescence measurements of InP substrates and InP/InGaAsP double heterostructures (DHSs) are presented. The measurements show a lattice dilatation in a region with enriched free carrier concentration achieved by using strong n-type doped InP substrates of","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"99 1","pages":"327-330"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78697533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147388
M. Tutt, G. Ng, D. Pavlidis, J. Mansfield
The effects of thermally stressing submicron In/sub x/Ga/sub 1-x/As/InAlAs/InP (x>or=0.53) HEMTs for storage periods of up to 100 h at 200 degrees C are discussed. DC characteristics are found to degrade. I/sub DSS/ decreased from 299 mA/mm to 182 mA/mm. G/sub m/ decreased from 513 mS/mm to 209 mS/mm. Decreases in microwave performance were also measured. f/sub T/ and f/sub max/ decreased by more than 30% and 20%, respectively. Evidence indicates that changes in the channel/buffer interface and layers manifested by the presence of additional trapping are responsible for this. Measurements of ohmic contacts show an increase from 0.19 Omega -mm to 0.26 Omega -mm. Results of X-ray analysis and Hall characterization are presented.<>
{"title":"Reliability issues of InAlAs/InGaAs high-electron-mobility transistors","authors":"M. Tutt, G. Ng, D. Pavlidis, J. Mansfield","doi":"10.1109/ICIPRM.1991.147388","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147388","url":null,"abstract":"The effects of thermally stressing submicron In/sub x/Ga/sub 1-x/As/InAlAs/InP (x>or=0.53) HEMTs for storage periods of up to 100 h at 200 degrees C are discussed. DC characteristics are found to degrade. I/sub DSS/ decreased from 299 mA/mm to 182 mA/mm. G/sub m/ decreased from 513 mS/mm to 209 mS/mm. Decreases in microwave performance were also measured. f/sub T/ and f/sub max/ decreased by more than 30% and 20%, respectively. Evidence indicates that changes in the channel/buffer interface and layers manifested by the presence of additional trapping are responsible for this. Measurements of ohmic contacts show an increase from 0.19 Omega -mm to 0.26 Omega -mm. Results of X-ray analysis and Hall characterization are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"25 1","pages":"349-352"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83236811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147351
C. Shieh, J. Chi, C. Armiento, P. Haugsjaa, A. Negri, M. Rothman, W.I. Wang
A technique that makes it possible to transfer semiconductor epitaxial films from a lattice-matched growth substrate to a host substrate of a different material is discussed. The transfer of epitaxial films allows materials with different lattice constants to be bonded together without generating a substantial number of defects in regions that are critical to device operation. The thin-film transfer process utilizes metallic solder as an interface between the transferred semiconductor layers and the host substrate. In this transfer process. the film is rigidly supported at all times during transfer, providing the potential for defect-free large-area films. The fabrication of InGaAsP lasers on both GaAs and Si substrates is described. Measurements of the optical characteristics of the lasers show threshold currents comparable to those of conventional lasers.<>
{"title":"A 1.3 mu m InGaAsP ridge waveguide laser on GaAs and silicon substrates thin-film transfer","authors":"C. Shieh, J. Chi, C. Armiento, P. Haugsjaa, A. Negri, M. Rothman, W.I. Wang","doi":"10.1109/ICIPRM.1991.147351","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147351","url":null,"abstract":"A technique that makes it possible to transfer semiconductor epitaxial films from a lattice-matched growth substrate to a host substrate of a different material is discussed. The transfer of epitaxial films allows materials with different lattice constants to be bonded together without generating a substantial number of defects in regions that are critical to device operation. The thin-film transfer process utilizes metallic solder as an interface between the transferred semiconductor layers and the host substrate. In this transfer process. the film is rigidly supported at all times during transfer, providing the potential for defect-free large-area films. The fabrication of InGaAsP lasers on both GaAs and Si substrates is described. Measurements of the optical characteristics of the lasers show threshold currents comparable to those of conventional lasers.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"11 1","pages":"272-275"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85940811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147314
F. Ducroquet, D. Pogány, S. Ababou, G. Guillot, S. Krawczyk, K. Schohe, C. Klingelhofer
Lattice mismatched In/sub x/Ga/sub 1-x/As photodiode arrays used for the detection of up to 1.7 mu m in space applications are discussed. The abnormally high reverse current observed on some diodes is interpreted by the electric field assisted generation process. The role of misfit dislocations in the process seems to be important, as established by the correlation between local lowering of photoluminescence signal and the high reverse current. The detection of one deep level on these photodiodes by admittance spectroscopy measurements is described.<>
{"title":"Electrical characterization of lattice-mismatched In/sub x/Ga/sub 1-x/As photodiode arrays for detection to 1.7 mu m","authors":"F. Ducroquet, D. Pogány, S. Ababou, G. Guillot, S. Krawczyk, K. Schohe, C. Klingelhofer","doi":"10.1109/ICIPRM.1991.147314","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147314","url":null,"abstract":"Lattice mismatched In/sub x/Ga/sub 1-x/As photodiode arrays used for the detection of up to 1.7 mu m in space applications are discussed. The abnormally high reverse current observed on some diodes is interpreted by the electric field assisted generation process. The role of misfit dislocations in the process seems to be important, as established by the correlation between local lowering of photoluminescence signal and the high reverse current. The detection of one deep level on these photodiodes by admittance spectroscopy measurements is described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"142-145"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88617180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147442
P. O'Sullivan, D. Allan, J. Herniman, N. Coyle, R. Young
The fabrication of a monolithic GaAs-on-InP, four channel, variable-bandwidth photoreceiver using seeded mask technology is discussed. The method, which is compatible with atmospheric metalorganic vapor-phase epitaxy (MOVPE) growth, may be applied to lattice matched electronics for other optical components. High-frequency data from fully functional OEICs are reported.<>
{"title":"Horizontal integration fabrication of a GaAs-on-InP opto-electronic integrated circuit (OEIC) using seeded-mask technology: four channel variable bandwidth optical receiver","authors":"P. O'Sullivan, D. Allan, J. Herniman, N. Coyle, R. Young","doi":"10.1109/ICIPRM.1991.147442","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147442","url":null,"abstract":"The fabrication of a monolithic GaAs-on-InP, four channel, variable-bandwidth photoreceiver using seeded mask technology is discussed. The method, which is compatible with atmospheric metalorganic vapor-phase epitaxy (MOVPE) growth, may be applied to lattice matched electronics for other optical components. High-frequency data from fully functional OEICs are reported.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"41 1","pages":"575-578"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73732856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147342
M. Tischler, B. D. Parker, M. Goorsky, P. Mooney
It is shown that superlattices or very thick buffer layers are not necessary to achieve high mobility in InGaAs/InAlAs 2DEG structures. However, an InAlAs buffer is required to prevent the formation of a sheet charge at the back interface of the InGaAs channel when it is grown directly on InP heated in an As flux. It is found that bulk InAlAs is not characterized by persistent photoconductivity (PPC) or carrier freezeout and that the transport properties of the two-dimensional electron gas (2DEG) structures are must less affected by cooling and illumination than comparable AlGaAs/GaAs structures.<>
{"title":"Effect of structural parameters on InGaAs/InAlAs 2DEG characteristics","authors":"M. Tischler, B. D. Parker, M. Goorsky, P. Mooney","doi":"10.1109/ICIPRM.1991.147342","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147342","url":null,"abstract":"It is shown that superlattices or very thick buffer layers are not necessary to achieve high mobility in InGaAs/InAlAs 2DEG structures. However, an InAlAs buffer is required to prevent the formation of a sheet charge at the back interface of the InGaAs channel when it is grown directly on InP heated in an As flux. It is found that bulk InAlAs is not characterized by persistent photoconductivity (PPC) or carrier freezeout and that the transport properties of the two-dimensional electron gas (2DEG) structures are must less affected by cooling and illumination than comparable AlGaAs/GaAs structures.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"85 1","pages":"224-227"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72704301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147401
D. Rømer, H. Albrecht, L. Hoffmann, J. Walter, G. Ebbinghaus
The structure and fabrication of an integrated pin photodiode (PD) and junction field-effect transistor (JFET) are discussed. A 3-dB bandwidth of 5.8 GHz and an external quantum efficiency of 87% for the PD have been achieved using a selective n implantation to reduce the series resistance. The pinch off voltage and drain current of the JFET with a 1.5- mu m gate length have been adjusted with a selective p implantation beneath the channel layer.<>
{"title":"Ion implanted monolithically integrated planar InP/InGaAs/InP:Fe photoreceiver","authors":"D. Rømer, H. Albrecht, L. Hoffmann, J. Walter, G. Ebbinghaus","doi":"10.1109/ICIPRM.1991.147401","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147401","url":null,"abstract":"The structure and fabrication of an integrated pin photodiode (PD) and junction field-effect transistor (JFET) are discussed. A 3-dB bandwidth of 5.8 GHz and an external quantum efficiency of 87% for the PD have been achieved using a selective n implantation to reduce the series resistance. The pinch off voltage and drain current of the JFET with a 1.5- mu m gate length have been adjusted with a selective p implantation beneath the channel layer.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"6 1","pages":"415-418"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73987336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147305
V. Diadiuk, S. Alexander, S. Groves, D. Spears
It is shown that InP-based pin photodiodes can be operated at high frequency with high quantum efficiency over a broad range of wavelengths (0.6-1.6 mu m). Good window layers for high-speed detectors can be made with n/sup ++/ InP for two reasons: the high carrier concentration enables low sheet resistance to be obtained with very thin layers, and the Burstein-Moss effect significantly reduces the absorption coefficient of the layer in the lambda =0.7-0.9 mu m range. This provides a low-resistance cap layer that is highly transparent over the lambda =0.7-1.6 mu m range and is lattice-matched to the InGaAs(P) active layer. At lambda =0.86 mu m, the detectors demonstrate a flat heterodyne response up to 3 GHz, with 3-dB roll-off of 8 GHz and DC quantum efficiency of approximately 80%. Their current-carrying capability makes them attractive for use in systems that require high local-oscillator power. The detectors are well suited for use with all the semiconductor laser sources available the traditional AlGaAs/GaAs and InP/InGaAsP as well as the new, strained-layer, quantum-well InGaAs/AlGaAs/GaAs and InGaAs/InGaP/GaAs lasers.<>
{"title":"High-frequency InP/InGaAs pin photodiodes with efficient response at short wavelengths","authors":"V. Diadiuk, S. Alexander, S. Groves, D. Spears","doi":"10.1109/ICIPRM.1991.147305","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147305","url":null,"abstract":"It is shown that InP-based pin photodiodes can be operated at high frequency with high quantum efficiency over a broad range of wavelengths (0.6-1.6 mu m). Good window layers for high-speed detectors can be made with n/sup ++/ InP for two reasons: the high carrier concentration enables low sheet resistance to be obtained with very thin layers, and the Burstein-Moss effect significantly reduces the absorption coefficient of the layer in the lambda =0.7-0.9 mu m range. This provides a low-resistance cap layer that is highly transparent over the lambda =0.7-1.6 mu m range and is lattice-matched to the InGaAs(P) active layer. At lambda =0.86 mu m, the detectors demonstrate a flat heterodyne response up to 3 GHz, with 3-dB roll-off of 8 GHz and DC quantum efficiency of approximately 80%. Their current-carrying capability makes them attractive for use in systems that require high local-oscillator power. The detectors are well suited for use with all the semiconductor laser sources available the traditional AlGaAs/GaAs and InP/InGaAsP as well as the new, strained-layer, quantum-well InGaAs/AlGaAs/GaAs and InGaAs/InGaP/GaAs lasers.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"41 1","pages":"110-113"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72848818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147462
A. Goltzené, B. Meyer, C. Schwab
The decay of fast-neutron-induced V/sub p/ and P/sub In/ defects during conventional thermal isochronal anneals was monitored using conventional electron paramagnetic resonance. An optimum temperature for the removal of the lattice damage introduced by neutron irradiation in undoped InP is found at 450 degrees C. Annealing at higher temperatures reveals further bulk effects. During heat treatment, pinning of the Fermi level on the P/sub In//sup 0%+/ midgap level is observed.<>
利用常规电子顺磁共振技术监测了在常规热等时退火过程中快中子诱导的V/sub p/和p/ sub In/缺陷的衰变。在450℃时发现了去除未掺杂InP中中子辐照引起的晶格损伤的最佳温度，在更高温度下退火可以进一步显示出体效应。在热处理过程中，观察到费米能级在P/sub /sup 0%+/中隙能级上的钉住
{"title":"Implantation damage in InP: thermal stability effects","authors":"A. Goltzené, B. Meyer, C. Schwab","doi":"10.1109/ICIPRM.1991.147462","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147462","url":null,"abstract":"The decay of fast-neutron-induced V/sub p/ and P/sub In/ defects during conventional thermal isochronal anneals was monitored using conventional electron paramagnetic resonance. An optimum temperature for the removal of the lattice damage introduced by neutron irradiation in undoped InP is found at 450 degrees C. Annealing at higher temperatures reveals further bulk effects. During heat treatment, pinning of the Fermi level on the P/sub In//sup 0%+/ midgap level is observed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"97 24 1","pages":"664-667"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78523545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147411
C. Pickering, N.S. Garawal, D. Lancefield, J. Piel, R. Blunt
Thickness measurements of various three and four layer structures on InP substrates using the non-destructive technique of spectroscopic ellipsometry are discussed. The individual layer thicknesses ranged from 150 AA to 4500 AA, and excellent agreement was found between the values obtained from the ellipsometric model and the values obtained on the same samples from conventional destructive thickness measurements (TEM and selective etching). The sensitivity of the spectroscopic ellipsometry modeling procedure to changes in thickness of the various layers is demonstrated and compared to X-ray diffraction modeling of the same layers.<>
{"title":"Non-destructive thickness measurements of GaInAs, AlInAs, and InP multilayer structures","authors":"C. Pickering, N.S. Garawal, D. Lancefield, J. Piel, R. Blunt","doi":"10.1109/ICIPRM.1991.147411","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147411","url":null,"abstract":"Thickness measurements of various three and four layer structures on InP substrates using the non-destructive technique of spectroscopic ellipsometry are discussed. The individual layer thicknesses ranged from 150 AA to 4500 AA, and excellent agreement was found between the values obtained from the ellipsometric model and the values obtained on the same samples from conventional destructive thickness measurements (TEM and selective etching). The sensitivity of the spectroscopic ellipsometry modeling procedure to changes in thickness of the various layers is demonstrated and compared to X-ray diffraction modeling of the same layers.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"180 1","pages":"456-459"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77336960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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