Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147320
R. Jain, I. Weinberg, D. Flood
The expected performances of n/sup +/p and p/sup +/n indium phosphide solar cells are compared. PC-1D, a quasi-one-dimensional computer program based on solving semiconductor transport equations by a finite-element method, was used to model n/sup +/p and p/sup +/n indium phosphide solar cell structures. The calculations show that the n/sup +/p structure offers a better short-circuit current, but that the p/sup +/n structure offers improved open-circuit voltage and overall gain in cell efficiency. The radiation resistance of p/sup +/n InP cells is compared to that of n/sup +/p cells. It is shown that the conflicting results obtained in experiments indicate the need for a systematic reevaluation of the comparative radiation resistance of the two InP cell configurations.<>
{"title":"Comparison of n/sup +/p and p/sup +/n structures in indium phosphide solar cells","authors":"R. Jain, I. Weinberg, D. Flood","doi":"10.1109/ICIPRM.1991.147320","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147320","url":null,"abstract":"The expected performances of n/sup +/p and p/sup +/n indium phosphide solar cells are compared. PC-1D, a quasi-one-dimensional computer program based on solving semiconductor transport equations by a finite-element method, was used to model n/sup +/p and p/sup +/n indium phosphide solar cell structures. The calculations show that the n/sup +/p structure offers a better short-circuit current, but that the p/sup +/n structure offers improved open-circuit voltage and overall gain in cell efficiency. The radiation resistance of p/sup +/n InP cells is compared to that of n/sup +/p cells. It is shown that the conflicting results obtained in experiments indicate the need for a systematic reevaluation of the comparative radiation resistance of the two InP cell configurations.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"32 1","pages":"168-172"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80301324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147439
P. Krauz, E. Rao, B. Descouts, Y. Gao, H. Thibierge
A study of medium dose Mg implants to achieve shallow p/sup +/ surface layers in Fe doped SI InP is presented. The influence of several parameters, such as the temperature of implants and P co-implant conditions, as well as the post-implant anneals are discussed. It is shown that the out-diffusion of implanted Ma that occurs during rapid thermal annealing (RTA) can be controlled by either InP proximity cap anneals or P co-implants. The undesirable deep in-diffusion can be reduced by performing Mg implants at 200 degrees C or by realizing P co-implants behind the Mg profile. The limitation of Mg solubility in InP is demonstrated to be the principal cause of its low electrical activation. Using the optimized implant and anneal conditions, a maximum of real Mg activation with a high degree of crystal perfection and abrupt shallow p/sup +/ layers in SI InP was achieved.<>
{"title":"Electrical and optical characteristics of Mg implanted semi-insulating InP","authors":"P. Krauz, E. Rao, B. Descouts, Y. Gao, H. Thibierge","doi":"10.1109/ICIPRM.1991.147439","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147439","url":null,"abstract":"A study of medium dose Mg implants to achieve shallow p/sup +/ surface layers in Fe doped SI InP is presented. The influence of several parameters, such as the temperature of implants and P co-implant conditions, as well as the post-implant anneals are discussed. It is shown that the out-diffusion of implanted Ma that occurs during rapid thermal annealing (RTA) can be controlled by either InP proximity cap anneals or P co-implants. The undesirable deep in-diffusion can be reduced by performing Mg implants at 200 degrees C or by realizing P co-implants behind the Mg profile. The limitation of Mg solubility in InP is demonstrated to be the principal cause of its low electrical activation. Using the optimized implant and anneal conditions, a maximum of real Mg activation with a high degree of crystal perfection and abrupt shallow p/sup +/ layers in SI InP was achieved.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"124 1","pages":"563-566"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74287859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147468
B. R. Bennett, J. D. del Alamo
Thin, mismatched epilayers tetragonally distort to form coherent interfaces. Beyond the critical thickness, misfit dislocations relieve strain. The dislocations form in an asymmetric pattern on
薄的，不匹配的脱毛层四方扭曲形成相干界面。在临界厚度之外，错配位错解除了应变。位错形成不对称的模式
{"title":"Orthorhombic distortion of mismatched In/sub x/Ga/sub 1-x/As/InP heterostructures","authors":"B. R. Bennett, J. D. del Alamo","doi":"10.1109/ICIPRM.1991.147468","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147468","url":null,"abstract":"Thin, mismatched epilayers tetragonally distort to form coherent interfaces. Beyond the critical thickness, misfit dislocations relieve strain. The dislocations form in an asymmetric pattern on","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"31 1","pages":"395-398"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73479416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147316
F. Beyette, X. An, S. Feld, M. Hafich, G. Y. Robinson, C. Wilmsen
Techniques for optically controlling the latching capabilities of the light amplifying optical switch (LAOS) are described. It is shown that the latching can be controlled by reducing either the voltage or the current of the latching element. The operation and design of functional blocks that implement set/reset flip flops, gated latches, and inverting logic are discussed.<>
{"title":"InGaAs/InP OEIC's for optical computing","authors":"F. Beyette, X. An, S. Feld, M. Hafich, G. Y. Robinson, C. Wilmsen","doi":"10.1109/ICIPRM.1991.147316","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147316","url":null,"abstract":"Techniques for optically controlling the latching capabilities of the light amplifying optical switch (LAOS) are described. It is shown that the latching can be controlled by reducing either the voltage or the current of the latching element. The operation and design of functional blocks that implement set/reset flip flops, gated latches, and inverting logic are discussed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"33 1","pages":"150-153"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86070708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147450
C. Lauterbach, H. Albrecht, M. Beschorner, R. Gessner, M. Schier
A self-aligned gate recess technology for the fabrication of InAlAs/InGaAs HEMTs is discussed. The applied reactive ion etching (RIE) process has a selectivity for InGaAs over InAlAs of 6:1, allowing a thin InAlAs Schottky barrier layer. The self-aligned Ti/Au metallization is suitable for the reproducible fabrication of gate lengths down to 0.3 mu m, starting with a 1 mu m recess. Realized gate leakage currents of 100 nA at a reverse bias of 5 V show that no degradation of the Schottky barrier occurs due to the process technology. With first HEMTs a transconductance of 400 mS/mm and a cutoff frequency of 22 GHz have been achieved.<>
{"title":"Self-aligned gate recess technology for the fabrication of InAlAs/InGaAs HEMT structures, using InAlAs as an etch-stop layer","authors":"C. Lauterbach, H. Albrecht, M. Beschorner, R. Gessner, M. Schier","doi":"10.1109/ICIPRM.1991.147450","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147450","url":null,"abstract":"A self-aligned gate recess technology for the fabrication of InAlAs/InGaAs HEMTs is discussed. The applied reactive ion etching (RIE) process has a selectivity for InGaAs over InAlAs of 6:1, allowing a thin InAlAs Schottky barrier layer. The self-aligned Ti/Au metallization is suitable for the reproducible fabrication of gate lengths down to 0.3 mu m, starting with a 1 mu m recess. Realized gate leakage currents of 100 nA at a reverse bias of 5 V show that no degradation of the Schottky barrier occurs due to the process technology. With first HEMTs a transconductance of 400 mS/mm and a cutoff frequency of 22 GHz have been achieved.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"49 1","pages":"610-613"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89819343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147399
R. Lai, P. Bhattacharya, D. Pavlidis
The performance characteristics of planar InP-based PIN-MODFET front-end photoreceivers realized by molecular beam epitaxial regrowth are discussed. The full width at half maximum (FWHM) of the temporal response to photoexcitation for the full circuit is shown to be 60 ps, which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3-dB frequency response of the circuit with an effective input load resistance of 33 Omega is 15.0 GHz.<>
{"title":"Monolithically integrated In/sub 0.60/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP photoreceivers with submicron devices","authors":"R. Lai, P. Bhattacharya, D. Pavlidis","doi":"10.1109/ICIPRM.1991.147399","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147399","url":null,"abstract":"The performance characteristics of planar InP-based PIN-MODFET front-end photoreceivers realized by molecular beam epitaxial regrowth are discussed. The full width at half maximum (FWHM) of the temporal response to photoexcitation for the full circuit is shown to be 60 ps, which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3-dB frequency response of the circuit with an effective input load resistance of 33 Omega is 15.0 GHz.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"16 1","pages":"407-410"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91006961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147423
S. Lourdudoss, S. Nilsson, L. Backbom, T. Klinga, O. Kjebon, B. Holmberg
The regrowth of SI-InP:Fe by hydride vapor-phase epitaxy (HVPE) around reactive-ion-etched (RIE) vertical mesas of lasers grown on Zn-doped p-InP substrate is described. The laser performance measurements show that at 20 degrees C, the DC and pulsed power saturation currents are 300 mA and >600 mA, or 20 and >40 times the threshold current, respectively. The characteristic temperature is 63 K. It is inferred that the overall performance can be improved by minimizing the actual series resistance of 5.6 Omega . The regrown SI-InP:Fe is highly current blocking despite its adjacency to InP:Zn substrate.<>
{"title":"Semi-insulating InP:Fe regrowth by hydride VPE around P-InP substrate laser mesas fabricated by reactive ion etching","authors":"S. Lourdudoss, S. Nilsson, L. Backbom, T. Klinga, O. Kjebon, B. Holmberg","doi":"10.1109/ICIPRM.1991.147423","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147423","url":null,"abstract":"The regrowth of SI-InP:Fe by hydride vapor-phase epitaxy (HVPE) around reactive-ion-etched (RIE) vertical mesas of lasers grown on Zn-doped p-InP substrate is described. The laser performance measurements show that at 20 degrees C, the DC and pulsed power saturation currents are 300 mA and >600 mA, or 20 and >40 times the threshold current, respectively. The characteristic temperature is 63 K. It is inferred that the overall performance can be improved by minimizing the actual series resistance of 5.6 Omega . The regrown SI-InP:Fe is highly current blocking despite its adjacency to InP:Zn substrate.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"30 1","pages":"504-506"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81413197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147355
D. Kusumi, Y. Ohkubo, M. Ura, M. Ohmori
An InP/sub x/O/sub y/ film formed by P/sub 2/O/sub 5/ evaporation and annealing below 380 degrees C was applied to enhance the Schottky barrier height for InP diodes and MESFETs. Optimizing the film formation, an InPxO/sub y/ film of less than 10 nm in thickness has been obtained reproducibly. The film and the film/InP interface were evaluated by X-ray photoelectron spectroscopy (XPS) and Auger electron Spectroscopy (AES) analysis. The best Au (1 mm phi )/InP/sub x/O/sub y//InP diode showed barrier height as high as 0.95 eV, an ideality factor of 1.2, and a reverse current of 100 pA at -10 V. Applying the structure of Au-InP/sub x/O/sub y/-InP to the MESFET, a transconductance of 106 mS/mm in the 0.8 mu m gate length FET was demonstrated.<>
{"title":"InP Schottky diodes and MESFETs with enhanced barrier height using InP/sub x/O/sub y/ films","authors":"D. Kusumi, Y. Ohkubo, M. Ura, M. Ohmori","doi":"10.1109/ICIPRM.1991.147355","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147355","url":null,"abstract":"An InP/sub x/O/sub y/ film formed by P/sub 2/O/sub 5/ evaporation and annealing below 380 degrees C was applied to enhance the Schottky barrier height for InP diodes and MESFETs. Optimizing the film formation, an InPxO/sub y/ film of less than 10 nm in thickness has been obtained reproducibly. The film and the film/InP interface were evaluated by X-ray photoelectron spectroscopy (XPS) and Auger electron Spectroscopy (AES) analysis. The best Au (1 mm phi )/InP/sub x/O/sub y//InP diode showed barrier height as high as 0.95 eV, an ideality factor of 1.2, and a reverse current of 100 pA at -10 V. Applying the structure of Au-InP/sub x/O/sub y/-InP to the MESFET, a transconductance of 106 mS/mm in the 0.8 mu m gate length FET was demonstrated.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"298 1","pages":"288-291"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80937588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147354
C. Heedt, P. Gottwald, W. Prost, F. Tegude, H. Kunzel, J. Dickmann, H. Dambkes
The impact of donor layer doping on InGaAs/InAlAs HFETs lattice matched to InP substrates is discussed. Several HFET layers with different donor concentrations and doped and undoped surface layers were grown by MBE. Using optical contact lithography, high performance devices (L/sub G/=0.8 mu m, f/sub max/>120 GHz) were prepared for characterization using DC, RF, Hall, TLM, PL, and photocapacitance measurements. High channel concentrations (n/sub s/>4*10/sup 12/ cm/sup -2/) were achieved at very high doping levels in the donor layer (N/sub D/=1*10/sup 19/ cm/sup -3/) and that surface doping does not improve device performance, but increases the output conductance and limits the range of usable drain bias. RF performance is mainly affected by the gate length of the device.<>
{"title":"Material characterisation of InGaAs/InAlAs heterostructure field effect transistors with heavily doped n-type InAlAs donor layer","authors":"C. Heedt, P. Gottwald, W. Prost, F. Tegude, H. Kunzel, J. Dickmann, H. Dambkes","doi":"10.1109/ICIPRM.1991.147354","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147354","url":null,"abstract":"The impact of donor layer doping on InGaAs/InAlAs HFETs lattice matched to InP substrates is discussed. Several HFET layers with different donor concentrations and doped and undoped surface layers were grown by MBE. Using optical contact lithography, high performance devices (L/sub G/=0.8 mu m, f/sub max/>120 GHz) were prepared for characterization using DC, RF, Hall, TLM, PL, and photocapacitance measurements. High channel concentrations (n/sub s/>4*10/sup 12/ cm/sup -2/) were achieved at very high doping levels in the donor layer (N/sub D/=1*10/sup 19/ cm/sup -3/) and that surface doping does not improve device performance, but increases the output conductance and limits the range of usable drain bias. RF performance is mainly affected by the gate length of the device.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"5 1","pages":"284-287"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78917641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147319
P. Jenkins, G. Landis
A technique for reducing the reflectance of glass-encapsulated InP, which is important for increasing the efficiency of solar cells and photodetectors, is described. The technique produces low-angle grooves on the surface by a maskless anisotropic etch. Light reflected from the low angle grooves is trapped by total internal reflection at the glass/air interface and directed back to the InP surface. Measurements indicating a significant decrease in surface reflection are presented.<>
{"title":"Surface etching for light trapping in encapsulated InP solar cells","authors":"P. Jenkins, G. Landis","doi":"10.1109/ICIPRM.1991.147319","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147319","url":null,"abstract":"A technique for reducing the reflectance of glass-encapsulated InP, which is important for increasing the efficiency of solar cells and photodetectors, is described. The technique produces low-angle grooves on the surface by a maskless anisotropic etch. Light reflected from the low angle grooves is trapped by total internal reflection at the glass/air interface and directed back to the InP surface. Measurements indicating a significant decrease in surface reflection are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"110 1","pages":"164-167"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79607822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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