Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147300
S. Yoneyama, M. Yoshimura, M. Tahahashi, K. Katayama, K. Takemoto, H. Okuda
The growth of high quality Fe-doped InP epitaxial layers by the chloride vapor phase epitaxy (VPE) method using N/sub 2/ as a carrier gas instead of conventional H/sub 2/ in the Fe source region is described. It is shown that Fe doping was achieved by introducing FeCl/sub 2/ to the growth region, bypassing the In source region. Reactor growth conditions have been optimized for a 2" phi wafer by examining the relationship between growth conditions and the distributions of resistivities and photoluminescence (PL) intensities. Excellent resistivity and thickness uniformity have been obtained by changing the distance between the gas mixing position and InP substrate and precisely controlling the growth temperature. About 92% of the area of the 2" phi wafer showed resistivities between 5*10/sup 7/ and 5*10/sup 8/ Omega -cm, and the maximum thickness deviation from the average of 2.7 mu m was within 2%.<>
{"title":"Highly uniform 2\" phi Fe-doped InP epitaxial layer grown by N/sub 2/ carrier gas mixed chloride vapor phase epitaxy","authors":"S. Yoneyama, M. Yoshimura, M. Tahahashi, K. Katayama, K. Takemoto, H. Okuda","doi":"10.1109/ICIPRM.1991.147300","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147300","url":null,"abstract":"The growth of high quality Fe-doped InP epitaxial layers by the chloride vapor phase epitaxy (VPE) method using N/sub 2/ as a carrier gas instead of conventional H/sub 2/ in the Fe source region is described. It is shown that Fe doping was achieved by introducing FeCl/sub 2/ to the growth region, bypassing the In source region. Reactor growth conditions have been optimized for a 2\" phi wafer by examining the relationship between growth conditions and the distributions of resistivities and photoluminescence (PL) intensities. Excellent resistivity and thickness uniformity have been obtained by changing the distance between the gas mixing position and InP substrate and precisely controlling the growth temperature. About 92% of the area of the 2\" phi wafer showed resistivities between 5*10/sup 7/ and 5*10/sup 8/ Omega -cm, and the maximum thickness deviation from the average of 2.7 mu m was within 2%.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"44 1","pages":"89-92"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85783026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147434
N. Proust, M. Petitjean, S. Cassette, A. Huber, C. Grattepain, F. Plais, B. Agius, J. Perrin
SiNH and SiOH have been deposited on InP by ultraviolet chemical vapor deposition (UVCVD), distributed electronic cyclotronic resonance (DECR) plasma-enhanced chemical vapor deposition (PECVD), and pulsed 13.56 MHz PECVD at 250 degrees C. A comparison between deposition techniques is presented in terms of interface composition (XPS), defect creation in InP (ETOCAPS), and secondary ion mass spectrometry (SIMS) profiles on metal-insulator-silicon diodes.<>
{"title":"InP/insulator interface properties: a comparison between UVCVD, DECR PECVD and 13.56 MHz PECVD","authors":"N. Proust, M. Petitjean, S. Cassette, A. Huber, C. Grattepain, F. Plais, B. Agius, J. Perrin","doi":"10.1109/ICIPRM.1991.147434","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147434","url":null,"abstract":"SiNH and SiOH have been deposited on InP by ultraviolet chemical vapor deposition (UVCVD), distributed electronic cyclotronic resonance (DECR) plasma-enhanced chemical vapor deposition (PECVD), and pulsed 13.56 MHz PECVD at 250 degrees C. A comparison between deposition techniques is presented in terms of interface composition (XPS), defect creation in InP (ETOCAPS), and secondary ion mass spectrometry (SIMS) profiles on metal-insulator-silicon diodes.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"5 1","pages":"543-546"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85936951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147286
T. Coutts, M. Wanlass, T. Gessert, X. Li, J. Ward
Progress in the development of solar cells based on InP and its lower-energy-gap, lattice-matched family of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ alloys is reviewed. The applications and performance of indium tin oxide (ITO)InP cells, monolithic tandem cells based on InP/Ga/sub 0.47/In/sub 0.53/As, mechanically stacked cells using GaAs/Ga/sub 0.25/In/sub 0.75/As/sub 0.54/P/sub 0.46/, and InP shallow-homojunction cells grown heteroepitaxially on lower-cost substrates are described. It is concluded that ITO/InP cells have reached a satisfactory efficiency level for 1-sun cells and are competitive with diffused-junction cells; mechanically stacked tandem concentrator cells have reached efficiencies that make them competitive with all other solar cells; monolithically grown tandem concentrator cells for space applications have the potential for significant improvements in efficiency; and heteroepitaxially grown InP homojunction cells hold considerable potential for space applications.<>
{"title":"Progress in InP-based solar cells","authors":"T. Coutts, M. Wanlass, T. Gessert, X. Li, J. Ward","doi":"10.1109/ICIPRM.1991.147286","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147286","url":null,"abstract":"Progress in the development of solar cells based on InP and its lower-energy-gap, lattice-matched family of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ alloys is reviewed. The applications and performance of indium tin oxide (ITO)InP cells, monolithic tandem cells based on InP/Ga/sub 0.47/In/sub 0.53/As, mechanically stacked cells using GaAs/Ga/sub 0.25/In/sub 0.75/As/sub 0.54/P/sub 0.46/, and InP shallow-homojunction cells grown heteroepitaxially on lower-cost substrates are described. It is concluded that ITO/InP cells have reached a satisfactory efficiency level for 1-sun cells and are competitive with diffused-junction cells; mechanically stacked tandem concentrator cells have reached efficiencies that make them competitive with all other solar cells; monolithically grown tandem concentrator cells for space applications have the potential for significant improvements in efficiency; and heteroepitaxially grown InP homojunction cells hold considerable potential for space applications.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"52 1","pages":"20-31"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88444100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147361
X. Liu, S. Ye, B. Yang, J. Jiao, J. Zhao
Electrical and optical characterizations of Ga-doped and Sb-doped InP crystal are presented. It is shown that doping with isoelectronic impurities, such as Ga or Sb, does not affect the electrical properties of InP crystal, dilute solid solutions are formed by doping InP with isoelectronic impurities, and native defects in InP can be reduced by doping with Sb.<>
{"title":"Electrical and optical characterizations of Ga-doped or Sb-doped InP crystal","authors":"X. Liu, S. Ye, B. Yang, J. Jiao, J. Zhao","doi":"10.1109/ICIPRM.1991.147361","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147361","url":null,"abstract":"Electrical and optical characterizations of Ga-doped and Sb-doped InP crystal are presented. It is shown that doping with isoelectronic impurities, such as Ga or Sb, does not affect the electrical properties of InP crystal, dilute solid solutions are formed by doping InP with isoelectronic impurities, and native defects in InP can be reduced by doping with Sb.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"23 1","pages":"315-318"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82813838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147290
J. Zibin, K. Rakennus, K. Tappura, G. Zhang, J. Lammasniemi, H. Asonen
The application of the gas-source molecular beam epitaxy technique to the growth of InP homojunction solar cells is discussed. Cells of various emitter thicknesses as well as with a graded emitter were grown. Attempts to improve on the blue response of the 200 AA non-graded emitter solar cell by growing 100 AA and graded 200 AA emitter cells were unsuccessful; the blue responses for all three cells were nearly identical. The spectral response of the >
{"title":"InP homojunction solar cells grown by gas-source molecular beam epitaxy","authors":"J. Zibin, K. Rakennus, K. Tappura, G. Zhang, J. Lammasniemi, H. Asonen","doi":"10.1109/ICIPRM.1991.147290","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147290","url":null,"abstract":"The application of the gas-source molecular beam epitaxy technique to the growth of InP homojunction solar cells is discussed. Cells of various emitter thicknesses as well as with a graded emitter were grown. Attempts to improve on the blue response of the 200 AA non-graded emitter solar cell by growing 100 AA and graded 200 AA emitter cells were unsuccessful; the blue responses for all three cells were nearly identical. The spectral response of the <or=200 AA emitter cells was found to vary greatly in time before SiN/sub x/ antireflection coating deposition and was restored after SiN/sub x/ deposition.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"8 1","pages":"48-51"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90812601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147407
M. Erman
Generic guided wave InP space-switching structures are discussed: directional couplers, total internal reflection switches, and digital optical switches. The technology of InP device fabrication and etching is outlined.<>
{"title":"Photonic devices for optical switching: from technology to systems","authors":"M. Erman","doi":"10.1109/ICIPRM.1991.147407","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147407","url":null,"abstract":"Generic guided wave InP space-switching structures are discussed: directional couplers, total internal reflection switches, and digital optical switches. The technology of InP device fabrication and etching is outlined.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"46 1","pages":"438-443"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91074457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147353
H. Kurita, A. Yokohata, A. Kodama, K. Suga, S. Kato, M. Ohmori
The I-V characteristics and RF performances of W-band InP Gunn diodes with linearly graded doping profiles are presented. Measurements performed on a fabricated diode indicate all output power of 135 mW with 3.0% efficiency at 90 GHz and output power of 117 mW with 2.7% at 94 GHz. The efficiencies are about 1.5 times larger than the best efficiency obtained for flat diodes.<>
{"title":"W-band InP Gunn diodes with optimized linearly graded profiles","authors":"H. Kurita, A. Yokohata, A. Kodama, K. Suga, S. Kato, M. Ohmori","doi":"10.1109/ICIPRM.1991.147353","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147353","url":null,"abstract":"The I-V characteristics and RF performances of W-band InP Gunn diodes with linearly graded doping profiles are presented. Measurements performed on a fabricated diode indicate all output power of 135 mW with 3.0% efficiency at 90 GHz and output power of 117 mW with 2.7% at 94 GHz. The efficiencies are about 1.5 times larger than the best efficiency obtained for flat diodes.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"274 1","pages":"280-283"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79993160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147415
I. Moerman, G. Coudenys, P. Demeester, J. Crawley
Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has been paid to obtaining a good morphology. The H/sub 2/S and DEZ doping of InP, InGaAs, and 1.3- mu m and 1.55- mu m quaternaries and the dependence of S and Zn doping on pressure and substrate orientation are discussed.<>
{"title":"Characterization of InP/InGaAs/InGaAsP using atmospheric and low pressure MOVPE","authors":"I. Moerman, G. Coudenys, P. Demeester, J. Crawley","doi":"10.1109/ICIPRM.1991.147415","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147415","url":null,"abstract":"Growth results and characterization of undoped and doped InP, InGaAs, and InGaAsP grown using both low pressure and atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE) are presented. The optimization of the growth parameters for undoped InP and InGaAs is described. Special attention has been paid to obtaining a good morphology. The H/sub 2/S and DEZ doping of InP, InGaAs, and 1.3- mu m and 1.55- mu m quaternaries and the dependence of S and Zn doping on pressure and substrate orientation are discussed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"472-475"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89155958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147318
R. Walters, S. Messenger, G. Summers
A study of proton irradiated InP junctions is described. Results are presented that show that the deep level transient spectroscopy (DLTS) spectra produced by 1 MeV electrons and 3 MeV protons in InP mesa diodes made using metalorganic chemical vapor deposition (MOCVD) are essentially the same. The results also show that there are some differences in the annealing behavior of the defects, especially following minority carrier injection at low temperatures.<>
{"title":"DLTS study of proton and electron irradiated n/sup +/p InP MOCVD mesa diodes (solar cells)","authors":"R. Walters, S. Messenger, G. Summers","doi":"10.1109/ICIPRM.1991.147318","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147318","url":null,"abstract":"A study of proton irradiated InP junctions is described. Results are presented that show that the deep level transient spectroscopy (DLTS) spectra produced by 1 MeV electrons and 3 MeV protons in InP mesa diodes made using metalorganic chemical vapor deposition (MOCVD) are essentially the same. The results also show that there are some differences in the annealing behavior of the defects, especially following minority carrier injection at low temperatures.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"43 1","pages":"159-163"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86739222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147438
V. Montgomery, D.G. Kimpton, J. Swanson
In/sub 0.53/Ga/sub 0.47/As (IGA)-SiO/sub 2/ interfaces are prepared by downstream plasma-enhanced chemical-vapor deposition (PECVD), which avoids exposing the semiconductor surface to the bombardment of the exciting plasma. The natural state of n- and p-type In/sub 0.53/Ga/sub 0.47/As in contact with SiO/sub 2/ prepared by downstream PECVD is electron accumulation. In the case of n-type material, hole accumulation is achieved with negative insulator fields, but for p-MIS structures, Fermi level pinning occurs at 0.41 eV from the valence band edge. Hole accumulation could not be established. The quiescent electron accumulated state of the p-type surface causes surface leakage in junctions that are passivated with this material.<>
{"title":"Silica layers formed on In/sub 0.53/Ga/sub 0.47/As by downstream PECVD","authors":"V. Montgomery, D.G. Kimpton, J. Swanson","doi":"10.1109/ICIPRM.1991.147438","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147438","url":null,"abstract":"In/sub 0.53/Ga/sub 0.47/As (IGA)-SiO/sub 2/ interfaces are prepared by downstream plasma-enhanced chemical-vapor deposition (PECVD), which avoids exposing the semiconductor surface to the bombardment of the exciting plasma. The natural state of n- and p-type In/sub 0.53/Ga/sub 0.47/As in contact with SiO/sub 2/ prepared by downstream PECVD is electron accumulation. In the case of n-type material, hole accumulation is achieved with negative insulator fields, but for p-MIS structures, Fermi level pinning occurs at 0.41 eV from the valence band edge. Hole accumulation could not be established. The quiescent electron accumulated state of the p-type surface causes surface leakage in junctions that are passivated with this material.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"92 1","pages":"559-562"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80486120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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