Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147331
P. Speier
Work being done within the RACE program, a major European Community action aimed at integrated broadband telecommunications, under the Advanced Quantum Well Lasers for Multigigabit Transmission Systems (AQUA) project, is discussed. Two main objectives of the AQUA project are outlined: the realization of ultra-high-speed lasers and ultra-high-speed optoelectronic devices, and the realization of advanced devices based on quantum well (QW) materials. Results are presented concerning: the epitaxial growth of QW materials in the InGaAsP and InGaAlAs system lattice matched to InP: the development of high speed laser structures with reduced parasitics; the realization of QW distributed feedback (DFB) lasers, demonstrating the expected performance enhancement due to QW effects: and the system related tests of such devices.<>
{"title":"Long wavelength quantum well lasers: synopsis of the RACE AQUA project on high speed MQW-DFB lasers","authors":"P. Speier","doi":"10.1109/ICIPRM.1991.147331","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147331","url":null,"abstract":"Work being done within the RACE program, a major European Community action aimed at integrated broadband telecommunications, under the Advanced Quantum Well Lasers for Multigigabit Transmission Systems (AQUA) project, is discussed. Two main objectives of the AQUA project are outlined: the realization of ultra-high-speed lasers and ultra-high-speed optoelectronic devices, and the realization of advanced devices based on quantum well (QW) materials. Results are presented concerning: the epitaxial growth of QW materials in the InGaAsP and InGaAlAs system lattice matched to InP: the development of high speed laser structures with reduced parasitics; the realization of QW distributed feedback (DFB) lasers, demonstrating the expected performance enhancement due to QW effects: and the system related tests of such devices.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"123 1-2","pages":"178-183"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91489740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147359
M. Faur, C. Goradia, M. Goradia, I. Weinberg
Cd diffusion and Zn diffusion into n-InP:S (N/sub D/ =3.5*10/sup 16/ and 4.5*10/sup 17/ cm/sup -3/) were performed by a closed ampoule technique at diffusion temperatures from 500 to 600 degrees C by using either high-purity Cd and Zn or Cd/sub 3/P/sub 2/ and Zn/sub 3/P/sub 2/. The Czochralski LEC grown substrates with etch pit densities (EPDs) from 3*10/sup 4/ to 7*10/sup 4/ cm/sup -2/ were used. Diffusions were performed through either bare surfaces or using SiO/sub 2/ (50-100 AA thick) and phosphorus-rich anodic and chemical oxides (25-50 AA thick) as cap layers. Specular surfaces have been obtained after Cd diffusion from Cd/sub 3/P/sub 2/ through P-rich oxide cap layers with a very low surface dislocation density which goes through a minimum of 400-800 cm/sup -2/ at the diffusion temperature of 560 degrees C. AM0 250 degrees C V/sub oc/ values as high as 860 mV from solar cells made on these structures are reported.<>
{"title":"High quality thermally diffused p/sup +/-n InP structures","authors":"M. Faur, C. Goradia, M. Goradia, I. Weinberg","doi":"10.1109/ICIPRM.1991.147359","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147359","url":null,"abstract":"Cd diffusion and Zn diffusion into n-InP:S (N/sub D/ =3.5*10/sup 16/ and 4.5*10/sup 17/ cm/sup -3/) were performed by a closed ampoule technique at diffusion temperatures from 500 to 600 degrees C by using either high-purity Cd and Zn or Cd/sub 3/P/sub 2/ and Zn/sub 3/P/sub 2/. The Czochralski LEC grown substrates with etch pit densities (EPDs) from 3*10/sup 4/ to 7*10/sup 4/ cm/sup -2/ were used. Diffusions were performed through either bare surfaces or using SiO/sub 2/ (50-100 AA thick) and phosphorus-rich anodic and chemical oxides (25-50 AA thick) as cap layers. Specular surfaces have been obtained after Cd diffusion from Cd/sub 3/P/sub 2/ through P-rich oxide cap layers with a very low surface dislocation density which goes through a minimum of 400-800 cm/sup -2/ at the diffusion temperature of 560 degrees C. AM0 250 degrees C V/sub oc/ values as high as 860 mV from solar cells made on these structures are reported.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"304-309"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85561847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147298
M. di Forte-Poisson, C. Brylinski, J. Favre, J. Portal, D. Lavielle
Experimental results obtained from secondary ion mass spectroscopy (SIMS) and low temperature Hall and Shubnikov de Haas measurements (SdH) of in situ planar doped low pressure metalorganic chemical vapor deposition (LP-MOCVD) grown InP epilayers with various Si doses (from 3*10/sup 11/ cm/sup -2/ to 7*10/sup 13/ cm/sup -2/) are presented. Transport measurements give evidence of quantum confinement of the electronic gas in the layers. The electronic density of the delta -doped layers is shown to saturate at n/sub s/=6*10/sup 12/ cm/sup -2/, depending on silicon doses. A comparison of design parameters (silicon doses) with both measured and calculated electronic subband properties is made for each epilayer. The transport properties of lightly Si delta -doped InP layers, under optical excitation at 4.2 K, are described.<>
{"title":"Characterization of Si- delta doped InP grown by low pressure chemical vapor deposition","authors":"M. di Forte-Poisson, C. Brylinski, J. Favre, J. Portal, D. Lavielle","doi":"10.1109/ICIPRM.1991.147298","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147298","url":null,"abstract":"Experimental results obtained from secondary ion mass spectroscopy (SIMS) and low temperature Hall and Shubnikov de Haas measurements (SdH) of in situ planar doped low pressure metalorganic chemical vapor deposition (LP-MOCVD) grown InP epilayers with various Si doses (from 3*10/sup 11/ cm/sup -2/ to 7*10/sup 13/ cm/sup -2/) are presented. Transport measurements give evidence of quantum confinement of the electronic gas in the layers. The electronic density of the delta -doped layers is shown to saturate at n/sub s/=6*10/sup 12/ cm/sup -2/, depending on silicon doses. A comparison of design parameters (silicon doses) with both measured and calculated electronic subband properties is made for each epilayer. The transport properties of lightly Si delta -doped InP layers, under optical excitation at 4.2 K, are described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"145 1","pages":"80-84"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73450614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147459
K. Imanishi, T. Ishikawa, M. Higuchi, K. Kondo, T. Katakami, S. Kuroda
It is shown that extremely uniform epitaxial growth of AlInAs/InGaAs selectively doped heterostructures can be achieved on 3-in InP substrates using an In-solder-free holder. The variation in the electron mobility and sheet electron density over a 3-in wafer is within +or-1%. The standard deviation of threshold voltage for HEMTs fabricated on the epitaxial wafer is 26 mV for a threshold voltage of -0.80 V. The uniformity obtained is acceptable for LSI fabrication.<>
{"title":"Uniform MBE growth of N-AlInAs/InGaAs heterostructures on 3-inch InP substrates and HEMT fabrication","authors":"K. Imanishi, T. Ishikawa, M. Higuchi, K. Kondo, T. Katakami, S. Kuroda","doi":"10.1109/ICIPRM.1991.147459","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147459","url":null,"abstract":"It is shown that extremely uniform epitaxial growth of AlInAs/InGaAs selectively doped heterostructures can be achieved on 3-in InP substrates using an In-solder-free holder. The variation in the electron mobility and sheet electron density over a 3-in wafer is within +or-1%. The standard deviation of threshold voltage for HEMTs fabricated on the epitaxial wafer is 26 mV for a threshold voltage of -0.80 V. The uniformity obtained is acceptable for LSI fabrication.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"18 1","pages":"652-655"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88830518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147431
Z. Shi, W. Anderson
Nearly ideal Schottky contacts were realized on n-InP by oxide-free surface cleaning techniques. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the metal-semiconductor (MS) diodes are presented for the temperature range of 100 to 300 K. The current transport mechanism is found to be dominated by thermionic emission (TE) rather than thermionic field emission (TFE) theory. The ideality factor, n, is nearly constant in the temperature range of 150 to 300 K. The superior behavior of the diodes, such as ideal electrical characteristics, n values of around 1.01, and linear 1/C/sup 2/-V plots, is attributed to the preservation of the surface integrity and the reduction of the interface states.<>
{"title":"Nearly ideal Schottky contacts of n-InP","authors":"Z. Shi, W. Anderson","doi":"10.1109/ICIPRM.1991.147431","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147431","url":null,"abstract":"Nearly ideal Schottky contacts were realized on n-InP by oxide-free surface cleaning techniques. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the metal-semiconductor (MS) diodes are presented for the temperature range of 100 to 300 K. The current transport mechanism is found to be dominated by thermionic emission (TE) rather than thermionic field emission (TFE) theory. The ideality factor, n, is nearly constant in the temperature range of 150 to 300 K. The superior behavior of the diodes, such as ideal electrical characteristics, n values of around 1.01, and linear 1/C/sup 2/-V plots, is attributed to the preservation of the surface integrity and the reduction of the interface states.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"30 1","pages":"535-538"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85939421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147444
F. Zamkotsian, F. Poingt, L. Le Gouezigou, F. Gaborit, J. Provost, C. Artigue, J. Benoit
The realization of standard heterojunction and multiple quantum well (MQW) 1.55- mu m lasers in the GaInAsP system grown by gas source molecular beam epitaxy (GSMBE) on [110] InP is discussed. It is shown that high-performance transmitters suitable for the polarization scrambling scheme can be achieved by integrating, on the same substrate, lasers and efficient polarization modulators.<>
{"title":"1.55 mu m laser on [110] InP by GSMBE","authors":"F. Zamkotsian, F. Poingt, L. Le Gouezigou, F. Gaborit, J. Provost, C. Artigue, J. Benoit","doi":"10.1109/ICIPRM.1991.147444","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147444","url":null,"abstract":"The realization of standard heterojunction and multiple quantum well (MQW) 1.55- mu m lasers in the GaInAsP system grown by gas source molecular beam epitaxy (GSMBE) on [110] InP is discussed. It is shown that high-performance transmitters suitable for the polarization scrambling scheme can be achieved by integrating, on the same substrate, lasers and efficient polarization modulators.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"23 1","pages":"584-587"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86038179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147357
E. Kohn, J. Dickmann
The RF behavior of InP-based HEMT structures was evaluated using a feedback correlation. No evidence was found that the deep quantum well InAlAs/InGaAs/InAlAs configuration adds to improved feedback behavior through additional confinement of hot carriers. The model does show that a drift region with a large aspect ratio can develop, which can be traversed by electrons with overshoot velocity leading to high f/sub max//f/sub T/ ratios at high f/sub T/ in the devices. It is concluded that in the design of millimeter-wave InP-based HEMTs, the structural aspect ratio and the aspect ratio of the drift region at the bias region of operation have to be optimized to take maximum advantage of a long drift region combined with a high transit overshoot velocity in the device.<>
{"title":"Carrier confinement and feed-back correlation in InAlAs/InGaAs HEMTs on InP substrate","authors":"E. Kohn, J. Dickmann","doi":"10.1109/ICIPRM.1991.147357","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147357","url":null,"abstract":"The RF behavior of InP-based HEMT structures was evaluated using a feedback correlation. No evidence was found that the deep quantum well InAlAs/InGaAs/InAlAs configuration adds to improved feedback behavior through additional confinement of hot carriers. The model does show that a drift region with a large aspect ratio can develop, which can be traversed by electrons with overshoot velocity leading to high f/sub max//f/sub T/ ratios at high f/sub T/ in the devices. It is concluded that in the design of millimeter-wave InP-based HEMTs, the structural aspect ratio and the aspect ratio of the drift region at the bias region of operation have to be optimized to take maximum advantage of a long drift region combined with a high transit overshoot velocity in the device.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"39 1","pages":"296-299"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81213204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147420
M. Hopkinson, P. Claxton, J. David, G. Hill, M. Reddy, M. Pate
The growth of InAs/InP strained quantum well structures with well thicknesses of 5 to 70 AA by solid source molecular beam epitaxy (MBE) is discussed. Photoluminescence has been observed from these structures over the wavelength range 1.0 to approximately=2.1 mu m, at 10 K. Multiquantum-well p-i-n diodes are characterized for optoelectronic applications from 1.0 to 2.0 mu m. Preliminary studies of InAs-channel MODFET devices are presented.<>
{"title":"High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy","authors":"M. Hopkinson, P. Claxton, J. David, G. Hill, M. Reddy, M. Pate","doi":"10.1109/ICIPRM.1991.147420","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147420","url":null,"abstract":"The growth of InAs/InP strained quantum well structures with well thicknesses of 5 to 70 AA by solid source molecular beam epitaxy (MBE) is discussed. Photoluminescence has been observed from these structures over the wavelength range 1.0 to approximately=2.1 mu m, at 10 K. Multiquantum-well p-i-n diodes are characterized for optoelectronic applications from 1.0 to 2.0 mu m. Preliminary studies of InAs-channel MODFET devices are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"5 2 1","pages":"492-495"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85115754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147448
M. Tischler, B. D. Parker, J. DeGelormo, T. Jackson, F. Cardone, M. Goorsky
The effects of uncapped rapid thermal annealing in an AsH/sub 3/ ambient on the thermal stability of InGaAs/InAlAs two dimensional electron gas (2DEG) structures are discussed. It is shown that the rapid thermal annealing results in the formation of a parasitic charge near the back of the InGaAs channel. The annealing does not result in large changes in the heterostructure or the intentional dopant position.<>
{"title":"Thermal stability of MBE-grown Si-doped InGaAs/InAlAs heterostructures","authors":"M. Tischler, B. D. Parker, J. DeGelormo, T. Jackson, F. Cardone, M. Goorsky","doi":"10.1109/ICIPRM.1991.147448","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147448","url":null,"abstract":"The effects of uncapped rapid thermal annealing in an AsH/sub 3/ ambient on the thermal stability of InGaAs/InAlAs two dimensional electron gas (2DEG) structures are discussed. It is shown that the rapid thermal annealing results in the formation of a parasitic charge near the back of the InGaAs channel. The annealing does not result in large changes in the heterostructure or the intentional dopant position.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"85 1","pages":"602-605"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89732316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147302
E. Rao, A. Ougazzaden, Y. Gao, H. Thibierge, A. Pougnet, A. Mircea, E. Lugagne-Delpond, P. Voisin
The photoluminescence (PL) properties of InGaAs-InGaAsP multiquantum well (MQW) structures for laser devices emitting in the approximately 1.55 mu m wavelength region are discussed. Different PL techniques, such as spectral analysis for studying interface quality, spatially and spectrally resolved cartography measurements for recording peak intensity distributions, and large-area topography for defect detection, have been applied to monitor the properties of as-grown and processed structures. After establishing the good quality of the as-grown structures, it is shown that the second epitaxial growth sequence or re-growth for realizing laser devices is a crucial processing step and that its optimization should take into consideration the doping level of Zn impurity.<>
{"title":"Photoluminescence investigation of InGaAs-InGaAsP multiquantum wells for laser devices","authors":"E. Rao, A. Ougazzaden, Y. Gao, H. Thibierge, A. Pougnet, A. Mircea, E. Lugagne-Delpond, P. Voisin","doi":"10.1109/ICIPRM.1991.147302","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147302","url":null,"abstract":"The photoluminescence (PL) properties of InGaAs-InGaAsP multiquantum well (MQW) structures for laser devices emitting in the approximately 1.55 mu m wavelength region are discussed. Different PL techniques, such as spectral analysis for studying interface quality, spatially and spectrally resolved cartography measurements for recording peak intensity distributions, and large-area topography for defect detection, have been applied to monitor the properties of as-grown and processed structures. After establishing the good quality of the as-grown structures, it is shown that the second epitaxial growth sequence or re-growth for realizing laser devices is a crucial processing step and that its optimization should take into consideration the doping level of Zn impurity.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"111 1","pages":"97-100"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80666866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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