Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147331
P. Speier
Work being done within the RACE program, a major European Community action aimed at integrated broadband telecommunications, under the Advanced Quantum Well Lasers for Multigigabit Transmission Systems (AQUA) project, is discussed. Two main objectives of the AQUA project are outlined: the realization of ultra-high-speed lasers and ultra-high-speed optoelectronic devices, and the realization of advanced devices based on quantum well (QW) materials. Results are presented concerning: the epitaxial growth of QW materials in the InGaAsP and InGaAlAs system lattice matched to InP: the development of high speed laser structures with reduced parasitics; the realization of QW distributed feedback (DFB) lasers, demonstrating the expected performance enhancement due to QW effects: and the system related tests of such devices.<>
{"title":"Long wavelength quantum well lasers: synopsis of the RACE AQUA project on high speed MQW-DFB lasers","authors":"P. Speier","doi":"10.1109/ICIPRM.1991.147331","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147331","url":null,"abstract":"Work being done within the RACE program, a major European Community action aimed at integrated broadband telecommunications, under the Advanced Quantum Well Lasers for Multigigabit Transmission Systems (AQUA) project, is discussed. Two main objectives of the AQUA project are outlined: the realization of ultra-high-speed lasers and ultra-high-speed optoelectronic devices, and the realization of advanced devices based on quantum well (QW) materials. Results are presented concerning: the epitaxial growth of QW materials in the InGaAsP and InGaAlAs system lattice matched to InP: the development of high speed laser structures with reduced parasitics; the realization of QW distributed feedback (DFB) lasers, demonstrating the expected performance enhancement due to QW effects: and the system related tests of such devices.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"123 1-2","pages":"178-183"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91489740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147359
M. Faur, C. Goradia, M. Goradia, I. Weinberg
Cd diffusion and Zn diffusion into n-InP:S (N/sub D/ =3.5*10/sup 16/ and 4.5*10/sup 17/ cm/sup -3/) were performed by a closed ampoule technique at diffusion temperatures from 500 to 600 degrees C by using either high-purity Cd and Zn or Cd/sub 3/P/sub 2/ and Zn/sub 3/P/sub 2/. The Czochralski LEC grown substrates with etch pit densities (EPDs) from 3*10/sup 4/ to 7*10/sup 4/ cm/sup -2/ were used. Diffusions were performed through either bare surfaces or using SiO/sub 2/ (50-100 AA thick) and phosphorus-rich anodic and chemical oxides (25-50 AA thick) as cap layers. Specular surfaces have been obtained after Cd diffusion from Cd/sub 3/P/sub 2/ through P-rich oxide cap layers with a very low surface dislocation density which goes through a minimum of 400-800 cm/sup -2/ at the diffusion temperature of 560 degrees C. AM0 250 degrees C V/sub oc/ values as high as 860 mV from solar cells made on these structures are reported.<>
{"title":"High quality thermally diffused p/sup +/-n InP structures","authors":"M. Faur, C. Goradia, M. Goradia, I. Weinberg","doi":"10.1109/ICIPRM.1991.147359","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147359","url":null,"abstract":"Cd diffusion and Zn diffusion into n-InP:S (N/sub D/ =3.5*10/sup 16/ and 4.5*10/sup 17/ cm/sup -3/) were performed by a closed ampoule technique at diffusion temperatures from 500 to 600 degrees C by using either high-purity Cd and Zn or Cd/sub 3/P/sub 2/ and Zn/sub 3/P/sub 2/. The Czochralski LEC grown substrates with etch pit densities (EPDs) from 3*10/sup 4/ to 7*10/sup 4/ cm/sup -2/ were used. Diffusions were performed through either bare surfaces or using SiO/sub 2/ (50-100 AA thick) and phosphorus-rich anodic and chemical oxides (25-50 AA thick) as cap layers. Specular surfaces have been obtained after Cd diffusion from Cd/sub 3/P/sub 2/ through P-rich oxide cap layers with a very low surface dislocation density which goes through a minimum of 400-800 cm/sup -2/ at the diffusion temperature of 560 degrees C. AM0 250 degrees C V/sub oc/ values as high as 860 mV from solar cells made on these structures are reported.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"304-309"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85561847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147298
M. di Forte-Poisson, C. Brylinski, J. Favre, J. Portal, D. Lavielle
Experimental results obtained from secondary ion mass spectroscopy (SIMS) and low temperature Hall and Shubnikov de Haas measurements (SdH) of in situ planar doped low pressure metalorganic chemical vapor deposition (LP-MOCVD) grown InP epilayers with various Si doses (from 3*10/sup 11/ cm/sup -2/ to 7*10/sup 13/ cm/sup -2/) are presented. Transport measurements give evidence of quantum confinement of the electronic gas in the layers. The electronic density of the delta -doped layers is shown to saturate at n/sub s/=6*10/sup 12/ cm/sup -2/, depending on silicon doses. A comparison of design parameters (silicon doses) with both measured and calculated electronic subband properties is made for each epilayer. The transport properties of lightly Si delta -doped InP layers, under optical excitation at 4.2 K, are described.<>
{"title":"Characterization of Si- delta doped InP grown by low pressure chemical vapor deposition","authors":"M. di Forte-Poisson, C. Brylinski, J. Favre, J. Portal, D. Lavielle","doi":"10.1109/ICIPRM.1991.147298","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147298","url":null,"abstract":"Experimental results obtained from secondary ion mass spectroscopy (SIMS) and low temperature Hall and Shubnikov de Haas measurements (SdH) of in situ planar doped low pressure metalorganic chemical vapor deposition (LP-MOCVD) grown InP epilayers with various Si doses (from 3*10/sup 11/ cm/sup -2/ to 7*10/sup 13/ cm/sup -2/) are presented. Transport measurements give evidence of quantum confinement of the electronic gas in the layers. The electronic density of the delta -doped layers is shown to saturate at n/sub s/=6*10/sup 12/ cm/sup -2/, depending on silicon doses. A comparison of design parameters (silicon doses) with both measured and calculated electronic subband properties is made for each epilayer. The transport properties of lightly Si delta -doped InP layers, under optical excitation at 4.2 K, are described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"145 1","pages":"80-84"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73450614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147341
R. Gessner, M. Beschorner, M. Druminski
The growth of (Al)GaInAs/Al(Ga)InAs structures of high quality for laser devices using metalorganic vapor-phase epitaxy (MOVPE) at atmospheric pressure is described. SeH/sub 2/ and DEZn have been used as the dopant precursors. Se is an appropriate dopant for the n-type confinement layers of lasers, showing a distinctly higher electrical activation in AlInAs than Si. Zn is superior to Mg as a dopant for the p-type confinement layers of lasers as its apparent diffusion coefficient is about one order of magnitude lower than that of Mg in AlInAs. Broad-area double-heterostructure (DH) lasers (device length=800 mu m) operating at 1.66 mu m and 1.55 mu m are shown to have I/sub th/ values as low as 2.3 kA cm/sup 2/ and 1.5 kA/cm/sup 2/, respectively. With broad-area separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers (device length=800 mu m) emitting at 1.524 mu m, threshold current densities as low is 0.92 kA/cm/sup 2/ can be achieved.<>
{"title":"Very low threshold current density (Al)GaInAs/Al(Ga)InAs laser structures grown by atmospheric pressure MOVPE","authors":"R. Gessner, M. Beschorner, M. Druminski","doi":"10.1109/ICIPRM.1991.147341","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147341","url":null,"abstract":"The growth of (Al)GaInAs/Al(Ga)InAs structures of high quality for laser devices using metalorganic vapor-phase epitaxy (MOVPE) at atmospheric pressure is described. SeH/sub 2/ and DEZn have been used as the dopant precursors. Se is an appropriate dopant for the n-type confinement layers of lasers, showing a distinctly higher electrical activation in AlInAs than Si. Zn is superior to Mg as a dopant for the p-type confinement layers of lasers as its apparent diffusion coefficient is about one order of magnitude lower than that of Mg in AlInAs. Broad-area double-heterostructure (DH) lasers (device length=800 mu m) operating at 1.66 mu m and 1.55 mu m are shown to have I/sub th/ values as low as 2.3 kA cm/sup 2/ and 1.5 kA/cm/sup 2/, respectively. With broad-area separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers (device length=800 mu m) emitting at 1.524 mu m, threshold current densities as low is 0.92 kA/cm/sup 2/ can be achieved.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"220-223"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74871037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147343
B. Jalali, R. Nottenburg, M. Banu, R. Montgomery, A. Levi, M. Panish, A. Cho
An overview of the InGaAs heterostructure bipolar transistor (HBT) technology for applications in high speed electronics is presented. Properties of both Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As and InP-In/sub 0.53/Ga/sub 0.47/As heterostructure systems, important for integrated circuit applications are discussed. Examples of high speed and low power integrated circuits that are relevant for lightwave communication technology are described.<>
{"title":"High speed InGaAs HBT devices and circuits","authors":"B. Jalali, R. Nottenburg, M. Banu, R. Montgomery, A. Levi, M. Panish, A. Cho","doi":"10.1109/ICIPRM.1991.147343","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147343","url":null,"abstract":"An overview of the InGaAs heterostructure bipolar transistor (HBT) technology for applications in high speed electronics is presented. Properties of both Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As and InP-In/sub 0.53/Ga/sub 0.47/As heterostructure systems, important for integrated circuit applications are discussed. Examples of high speed and low power integrated circuits that are relevant for lightwave communication technology are described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"228-233"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72741943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147446
J. Marsh, S. Bradshaw, A. Bryce, R. Gwilliam, R. Glew
The use of fluorine and boron to disorder two material systems for use at 1.5 mu m, GaInAs/AlGaInAs and GaInAs/GaInAsP, both lattice-matched to InP, is discussed. Three structures are investigated: two GaInAsP multiple quantum well (MQW) structures, a separate confinement heterostructure (SCH) and a graded index structure (GRIN), and an AlGaInAs MQW structure. It is shown that the P-quaternary disorders without any implants at annealing temperatures above 500 degrees C, and the Al-quaternary is stable up to annealing temperatures of 650 degrees C. At annealing temperatures of 600 degrees C for the P and 650 degrees C for the Al quaternary. boron causes some intermixing, probably due to the damage caused by implantation. A significant blue shift was achieved in material implanted with fluorine while, under the same annealing conditions, the control samples remained unchanged.<>
{"title":"Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP (MQW waveguides)","authors":"J. Marsh, S. Bradshaw, A. Bryce, R. Gwilliam, R. Glew","doi":"10.1109/ICIPRM.1991.147446","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147446","url":null,"abstract":"The use of fluorine and boron to disorder two material systems for use at 1.5 mu m, GaInAs/AlGaInAs and GaInAs/GaInAsP, both lattice-matched to InP, is discussed. Three structures are investigated: two GaInAsP multiple quantum well (MQW) structures, a separate confinement heterostructure (SCH) and a graded index structure (GRIN), and an AlGaInAs MQW structure. It is shown that the P-quaternary disorders without any implants at annealing temperatures above 500 degrees C, and the Al-quaternary is stable up to annealing temperatures of 650 degrees C. At annealing temperatures of 600 degrees C for the P and 650 degrees C for the Al quaternary. boron causes some intermixing, probably due to the damage caused by implantation. A significant blue shift was achieved in material implanted with fluorine while, under the same annealing conditions, the control samples remained unchanged.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"2 1","pages":"592-595"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81911263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147459
K. Imanishi, T. Ishikawa, M. Higuchi, K. Kondo, T. Katakami, S. Kuroda
It is shown that extremely uniform epitaxial growth of AlInAs/InGaAs selectively doped heterostructures can be achieved on 3-in InP substrates using an In-solder-free holder. The variation in the electron mobility and sheet electron density over a 3-in wafer is within +or-1%. The standard deviation of threshold voltage for HEMTs fabricated on the epitaxial wafer is 26 mV for a threshold voltage of -0.80 V. The uniformity obtained is acceptable for LSI fabrication.<>
{"title":"Uniform MBE growth of N-AlInAs/InGaAs heterostructures on 3-inch InP substrates and HEMT fabrication","authors":"K. Imanishi, T. Ishikawa, M. Higuchi, K. Kondo, T. Katakami, S. Kuroda","doi":"10.1109/ICIPRM.1991.147459","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147459","url":null,"abstract":"It is shown that extremely uniform epitaxial growth of AlInAs/InGaAs selectively doped heterostructures can be achieved on 3-in InP substrates using an In-solder-free holder. The variation in the electron mobility and sheet electron density over a 3-in wafer is within +or-1%. The standard deviation of threshold voltage for HEMTs fabricated on the epitaxial wafer is 26 mV for a threshold voltage of -0.80 V. The uniformity obtained is acceptable for LSI fabrication.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"18 1","pages":"652-655"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88830518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147420
M. Hopkinson, P. Claxton, J. David, G. Hill, M. Reddy, M. Pate
The growth of InAs/InP strained quantum well structures with well thicknesses of 5 to 70 AA by solid source molecular beam epitaxy (MBE) is discussed. Photoluminescence has been observed from these structures over the wavelength range 1.0 to approximately=2.1 mu m, at 10 K. Multiquantum-well p-i-n diodes are characterized for optoelectronic applications from 1.0 to 2.0 mu m. Preliminary studies of InAs-channel MODFET devices are presented.<>
{"title":"High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy","authors":"M. Hopkinson, P. Claxton, J. David, G. Hill, M. Reddy, M. Pate","doi":"10.1109/ICIPRM.1991.147420","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147420","url":null,"abstract":"The growth of InAs/InP strained quantum well structures with well thicknesses of 5 to 70 AA by solid source molecular beam epitaxy (MBE) is discussed. Photoluminescence has been observed from these structures over the wavelength range 1.0 to approximately=2.1 mu m, at 10 K. Multiquantum-well p-i-n diodes are characterized for optoelectronic applications from 1.0 to 2.0 mu m. Preliminary studies of InAs-channel MODFET devices are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"5 2 1","pages":"492-495"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85115754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147431
Z. Shi, W. Anderson
Nearly ideal Schottky contacts were realized on n-InP by oxide-free surface cleaning techniques. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the metal-semiconductor (MS) diodes are presented for the temperature range of 100 to 300 K. The current transport mechanism is found to be dominated by thermionic emission (TE) rather than thermionic field emission (TFE) theory. The ideality factor, n, is nearly constant in the temperature range of 150 to 300 K. The superior behavior of the diodes, such as ideal electrical characteristics, n values of around 1.01, and linear 1/C/sup 2/-V plots, is attributed to the preservation of the surface integrity and the reduction of the interface states.<>
{"title":"Nearly ideal Schottky contacts of n-InP","authors":"Z. Shi, W. Anderson","doi":"10.1109/ICIPRM.1991.147431","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147431","url":null,"abstract":"Nearly ideal Schottky contacts were realized on n-InP by oxide-free surface cleaning techniques. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the metal-semiconductor (MS) diodes are presented for the temperature range of 100 to 300 K. The current transport mechanism is found to be dominated by thermionic emission (TE) rather than thermionic field emission (TFE) theory. The ideality factor, n, is nearly constant in the temperature range of 150 to 300 K. The superior behavior of the diodes, such as ideal electrical characteristics, n values of around 1.01, and linear 1/C/sup 2/-V plots, is attributed to the preservation of the surface integrity and the reduction of the interface states.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"30 1","pages":"535-538"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85939421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147444
F. Zamkotsian, F. Poingt, L. Le Gouezigou, F. Gaborit, J. Provost, C. Artigue, J. Benoit
The realization of standard heterojunction and multiple quantum well (MQW) 1.55- mu m lasers in the GaInAsP system grown by gas source molecular beam epitaxy (GSMBE) on [110] InP is discussed. It is shown that high-performance transmitters suitable for the polarization scrambling scheme can be achieved by integrating, on the same substrate, lasers and efficient polarization modulators.<>
{"title":"1.55 mu m laser on [110] InP by GSMBE","authors":"F. Zamkotsian, F. Poingt, L. Le Gouezigou, F. Gaborit, J. Provost, C. Artigue, J. Benoit","doi":"10.1109/ICIPRM.1991.147444","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147444","url":null,"abstract":"The realization of standard heterojunction and multiple quantum well (MQW) 1.55- mu m lasers in the GaInAsP system grown by gas source molecular beam epitaxy (GSMBE) on [110] InP is discussed. It is shown that high-performance transmitters suitable for the polarization scrambling scheme can be achieved by integrating, on the same substrate, lasers and efficient polarization modulators.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"23 1","pages":"584-587"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86038179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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