Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147406
S. Loualiche, A. Le Corre, S. Salaun, S. Durel, D. Lecrosnier, C. Guillemot, C. Vaudry, L. Henry
Photoluminescence, Hall effect, and I-V characteristics of heterostructure InP/GaInAs/InP grown by gas source molecular beam epitaxy (MBE) are presented. The structure is chosen as an alternative to AlInAs/GaInAs/AlInAs to avoid the problems related to the presence of aluminum in HEMT structures. An extremely high indium concentration is used in the well to improve its performance. The InAs well degrades above 10 AA thickness. It is shown that the best experimental results are obtained with a 60 AA GaInAs well (82% InAs) with 2% lattice mismatch.<>
{"title":"Influence of the well composition and thickness in the GaInP/InP/GaInAs/InP structure for HEMT","authors":"S. Loualiche, A. Le Corre, S. Salaun, S. Durel, D. Lecrosnier, C. Guillemot, C. Vaudry, L. Henry","doi":"10.1109/ICIPRM.1991.147406","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147406","url":null,"abstract":"Photoluminescence, Hall effect, and I-V characteristics of heterostructure InP/GaInAs/InP grown by gas source molecular beam epitaxy (MBE) are presented. The structure is chosen as an alternative to AlInAs/GaInAs/AlInAs to avoid the problems related to the presence of aluminum in HEMT structures. An extremely high indium concentration is used in the well to improve its performance. The InAs well degrades above 10 AA thickness. It is shown that the best experimental results are obtained with a 60 AA GaInAs well (82% InAs) with 2% lattice mismatch.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"6 1","pages":"434-437"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75667025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147386
C. Yuen, Y. Pao, R. Majidi-Ahy, M. Riaziat, C. Nishimoto
The circuit design and fabrication of monolithic low-noise InP HEMT amplifiers that cover from 5 to beyond 100 GHz are described. The amplifiers use 0.25- mu m and 0.1- mu m InAlAs/InGaAs/InP HEMTs as active devices and on-chip matching and biasing circuits. The device performances for InP HEMTs with various gate geometries and the performance of the developed InP HEMT MMICs are presented.<>
{"title":"Application of InP HEMT devices to millimeter-wave MMICs","authors":"C. Yuen, Y. Pao, R. Majidi-Ahy, M. Riaziat, C. Nishimoto","doi":"10.1109/ICIPRM.1991.147386","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147386","url":null,"abstract":"The circuit design and fabrication of monolithic low-noise InP HEMT amplifiers that cover from 5 to beyond 100 GHz are described. The amplifiers use 0.25- mu m and 0.1- mu m InAlAs/InGaAs/InP HEMTs as active devices and on-chip matching and biasing circuits. The device performances for InP HEMTs with various gate geometries and the performance of the developed InP HEMT MMICs are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"89 1","pages":"336-343"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82333054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147389
H. Iwamura, H. Uenohara, T. Kagawa, M. Naganuma
High quality quantum well structures of InGaAs/InGaAsP and InAlAs/InGaAsP were grown by gas source molecular beam epitaxy (GSMBE). Low-temperature photoluminescence (PL) measurements, transverse electromagnetic (TEM) observation of the cleaved edge, and high-energy electron diffraction (RHEED) patterns obtained during growth of the interface are used to investigate the characteristics of the heterointerface. Multiple quantum well separate confinement heterostructure (MQW-SCH) laser diodes, voltage-controlled bistable laser diodes, and InGaAsP/InAlAs superlattice avalanche photodiodes are discussed as device applications.<>
{"title":"Characteristics and abruptness of InGaAs/InP quantum well and optoelectronic applications of quantum wells grown by GSMBE","authors":"H. Iwamura, H. Uenohara, T. Kagawa, M. Naganuma","doi":"10.1109/ICIPRM.1991.147389","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147389","url":null,"abstract":"High quality quantum well structures of InGaAs/InGaAsP and InAlAs/InGaAsP were grown by gas source molecular beam epitaxy (GSMBE). Low-temperature photoluminescence (PL) measurements, transverse electromagnetic (TEM) observation of the cleaved edge, and high-energy electron diffraction (RHEED) patterns obtained during growth of the interface are used to investigate the characteristics of the heterointerface. Multiple quantum well separate confinement heterostructure (MQW-SCH) laser diodes, voltage-controlled bistable laser diodes, and InGaAsP/InAlAs superlattice avalanche photodiodes are discussed as device applications.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"286 1","pages":"353-358"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75118669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147465
Y. Chan, D. Pavlidis
The design of InAlAs/In/sub x/Ga/sub 1-x/As (x>or=0.53) heterostructure insulated-gate FETs with lattice-matched and strained channel designs are investigated. It is shown that DC (g/sub m/,K) and microwave (f/sub T/, f/sub max/) characteristics were enhanced as the In content was increased to 65% in the InGaAs channel: best performance was mu =12890 cm/sup 2//V-s, gm=438 mS/mm, f/sub T/=27 GHz. Orientation effects indicate a V/sub th/ shift up to -0.128 V and a very small g/sub m/ variation. Enhancement- and depletion-mode HIGFET operation was controlled by an additional selective ion implantation in the channel.<>
{"title":"InAlAs/In/sub x/Ga/sub 1-x/As HIGFETs (x>or=0.53) for E/D FET logic applications","authors":"Y. Chan, D. Pavlidis","doi":"10.1109/ICIPRM.1991.147465","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147465","url":null,"abstract":"The design of InAlAs/In/sub x/Ga/sub 1-x/As (x>or=0.53) heterostructure insulated-gate FETs with lattice-matched and strained channel designs are investigated. It is shown that DC (g/sub m/,K) and microwave (f/sub T/, f/sub max/) characteristics were enhanced as the In content was increased to 65% in the InGaAs channel: best performance was mu =12890 cm/sup 2//V-s, gm=438 mS/mm, f/sub T/=27 GHz. Orientation effects indicate a V/sub th/ shift up to -0.128 V and a very small g/sub m/ variation. Enhancement- and depletion-mode HIGFET operation was controlled by an additional selective ion implantation in the channel.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"86 1","pages":"242-245"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74018575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147427
B. Sartorius, M. Brandstattner
The calibration and optimization of a two-wavelength transmission method for nondestructive thickness mapping of InGaAsP layers are described. In two-wavelength transmission, two beams are focused simultaneously to the same sample point: the absorption beam for which the substrate is transparent and only the layer under investigation is absorbing, and the reference beam that exhibits no absorption but nearly identical parasitic losses. The derivation of the absorption coefficient of the InGaAsP layers from measurements on layers with known thicknesses is discussed. The compensation of parasitic losses, optimized by using a reference wafer without an epitaxial layer during the balancing procedure, is also discussed.<>
{"title":"Optimization and calibration of two-wavelength transmission for absolute thickness measurements of InGaAsP/InP layers","authors":"B. Sartorius, M. Brandstattner","doi":"10.1109/ICIPRM.1991.147427","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147427","url":null,"abstract":"The calibration and optimization of a two-wavelength transmission method for nondestructive thickness mapping of InGaAsP layers are described. In two-wavelength transmission, two beams are focused simultaneously to the same sample point: the absorption beam for which the substrate is transparent and only the layer under investigation is absorbing, and the reference beam that exhibits no absorption but nearly identical parasitic losses. The derivation of the absorption coefficient of the InGaAsP layers from measurements on layers with known thicknesses is discussed. The compensation of parasitic losses, optimized by using a reference wafer without an epitaxial layer during the balancing procedure, is also discussed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"519-522"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74715070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147363
K. Korona, G. Brémond, A. M. Hennel
Deep level transient spectroscopy (DLTS), deep level optical spectroscopy (DLOS), and optical absorption (OA) measurements were performed on Ni diffused p-type InP to find the position of the single acceptor level of Ni in InP and to characterize optically the Ni/sup 3+/ state. DLTS enabled the identification of Ni acceptor levels in InP and the determination of its activation energy and its hole capture cross-section. Using DLOS an optical photoionization cross-section of the Ni/sup 3+/ to Ni/sup 2+/ transition was found.<>
{"title":"Electrical and optical properties of Ni/sup 3+/ in p-type InP","authors":"K. Korona, G. Brémond, A. M. Hennel","doi":"10.1109/ICIPRM.1991.147363","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147363","url":null,"abstract":"Deep level transient spectroscopy (DLTS), deep level optical spectroscopy (DLOS), and optical absorption (OA) measurements were performed on Ni diffused p-type InP to find the position of the single acceptor level of Ni in InP and to characterize optically the Ni/sup 3+/ state. DLTS enabled the identification of Ni acceptor levels in InP and the determination of its activation energy and its hole capture cross-section. Using DLOS an optical photoionization cross-section of the Ni/sup 3+/ to Ni/sup 2+/ transition was found.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"35 1","pages":"323-326"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85614951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147464
G. Glastre, D. Rondi, A. Enard, R. Blondeau
The fabrication and performance characteristics of semiconductor optical amplifiers integrated with passive waveguides are described. Chip gain of >21 dB, a gain ripple of <0.7 dB, and a gain difference of <0.5 dB between TE and TM modes were observed. It is shown that polarization insensitive amplifier/waveguides fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) can provide fiber-to-fiber gains of around 8 dB, high enough to fully compensate for losses generated in directional couplers or a 4*4 matrix, as well as low gain ripple.<>
介绍了无源波导集成半导体光放大器的制作方法和性能特点。芯片增益>21 dB，增益纹波>
{"title":"Polarization insensitive 1.55 mu m semiconductor optical amplifier integrated with passive waveguides made by MOCVD","authors":"G. Glastre, D. Rondi, A. Enard, R. Blondeau","doi":"10.1109/ICIPRM.1991.147464","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147464","url":null,"abstract":"The fabrication and performance characteristics of semiconductor optical amplifiers integrated with passive waveguides are described. Chip gain of >21 dB, a gain ripple of <0.7 dB, and a gain difference of <0.5 dB between TE and TM modes were observed. It is shown that polarization insensitive amplifier/waveguides fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) can provide fiber-to-fiber gains of around 8 dB, high enough to fully compensate for losses generated in directional couplers or a 4*4 matrix, as well as low gain ripple.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"412 1","pages":"672-675"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84884495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147422
F. Vidimari, S. Pellegrino, M. Caldironi, A. Di Paola, R. Chen
The possibility of obtaining semiinsulating buried layers in InP by Co or Fe ion implantation and subsequent epitaxial regrowth is discussed. Electrical characteristics measurements of Fe and Co implanted InP indicate resistivities in excess of 10/sup 7/ Omega -cm critical voltages of 2.5 V, and current densities as low as 20 mA/cm/sup 2/ at critical voltage.<>
{"title":"High resistivity layers in InP obtained by Co or Fe ion implantation and LPE regrowth","authors":"F. Vidimari, S. Pellegrino, M. Caldironi, A. Di Paola, R. Chen","doi":"10.1109/ICIPRM.1991.147422","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147422","url":null,"abstract":"The possibility of obtaining semiinsulating buried layers in InP by Co or Fe ion implantation and subsequent epitaxial regrowth is discussed. Electrical characteristics measurements of Fe and Co implanted InP indicate resistivities in excess of 10/sup 7/ Omega -cm critical voltages of 2.5 V, and current densities as low as 20 mA/cm/sup 2/ at critical voltage.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"29 1","pages":"500-503"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74864946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147421
A. Tabata, T. Benyattou, G. Guillot, Z. Sobiesierski, S. Clark, R. Williams, M. Gendry, G. Hollinger, P. Viktorovitch
The epitaxial growth and characterization of InAs surface quantum wells grown on InP by molecular beam epitaxy (MBE) are discussed. The structural properties of the InAs layers are described. Photoluminescence results are presented. This system shows practically no coupling between the confined states in the InAs quantum well and the InAs surface states.<>
{"title":"Surface InAs/InP quantum wells: epitaxial growth and characterization","authors":"A. Tabata, T. Benyattou, G. Guillot, Z. Sobiesierski, S. Clark, R. Williams, M. Gendry, G. Hollinger, P. Viktorovitch","doi":"10.1109/ICIPRM.1991.147421","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147421","url":null,"abstract":"The epitaxial growth and characterization of InAs surface quantum wells grown on InP by molecular beam epitaxy (MBE) are discussed. The structural properties of the InAs layers are described. Photoluminescence results are presented. This system shows practically no coupling between the confined states in the InAs quantum well and the InAs surface states.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"336 1","pages":"496-499"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76378886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147348
M. V. Rao, R. Nadella, S.M. Gulwadi
High-energy ion implantation in compound semiconductors, an economical alternative to the epitaxial growth technique for fabrication of devices that need thick or buried active layers is discussed. High-energy Si implantations in InP yield buried layers with high carrier concentration and low defect density as long as the implant dose is less than the critical dose that makes the material amorphous. Elevated temperature implants need to be used to extend the critical dose. Compensation of the surface side tail of the implant profile is necessary to obtain the sharp carrier concentration depth profiles that are necessary for many device applications. The Be/P coimplantation is useful for obtaining buried p-type profiles without any broadening caused by Be in-diffusion. The Fe implantation is useful for obtaining high resistance regions in InGaAs.<>
{"title":"Implantation of high-energy Si and Be ions in InP and low-energy transition metal ions in InGaAs","authors":"M. V. Rao, R. Nadella, S.M. Gulwadi","doi":"10.1109/ICIPRM.1991.147348","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147348","url":null,"abstract":"High-energy ion implantation in compound semiconductors, an economical alternative to the epitaxial growth technique for fabrication of devices that need thick or buried active layers is discussed. High-energy Si implantations in InP yield buried layers with high carrier concentration and low defect density as long as the implant dose is less than the critical dose that makes the material amorphous. Elevated temperature implants need to be used to extend the critical dose. Compensation of the surface side tail of the implant profile is necessary to obtain the sharp carrier concentration depth profiles that are necessary for many device applications. The Be/P coimplantation is useful for obtaining buried p-type profiles without any broadening caused by Be in-diffusion. The Fe implantation is useful for obtaining high resistance regions in InGaAs.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"5 1","pages":"260-263"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82343716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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