Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147435
F. Plais, B. Agius, N. Proust, S. Cassette, G. Ravel, M. Puech
The low temperature deposition of SiO/sub 2/ thin films onto InP substrates is discussed. It is shown that the physical and chemical properties of SiO/sub 2/ thin films are stable over a three month period. X-ray photoelectron spectroscopy (XPS) analysis of the chemistry of the SiO/sub 2/-InP interface reveals the presence of an interfacial substrate oxide. The MIS C(V) characteristics exhibit low frequency dispersion and a deep depletion regime, but it is shown that the measurement procedure can significantly affect the fixed charge and interface state density determination.<>
{"title":"Low temperature deposition of SiO/sub 2/ on InP substrates by DECR PECVD","authors":"F. Plais, B. Agius, N. Proust, S. Cassette, G. Ravel, M. Puech","doi":"10.1109/ICIPRM.1991.147435","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147435","url":null,"abstract":"The low temperature deposition of SiO/sub 2/ thin films onto InP substrates is discussed. It is shown that the physical and chemical properties of SiO/sub 2/ thin films are stable over a three month period. X-ray photoelectron spectroscopy (XPS) analysis of the chemistry of the SiO/sub 2/-InP interface reveals the presence of an interfacial substrate oxide. The MIS C(V) characteristics exhibit low frequency dispersion and a deep depletion regime, but it is shown that the measurement procedure can significantly affect the fixed charge and interface state density determination.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"90 1","pages":"547-550"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83568267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147307
L. Aina, M. Mattingly, M. Burgess, J. O'connor, S. Shastry, D. Hill, J. Salerno, A. Davis, J. P. Lorenzo
The growth of high-purity InP on Si and the fabrication of high-speed and high-sensitivity InP/GaInAs heterojunction phototransistors using InP grown on Si by organometallic vapor-phase epitaxy (OMVPE) are described. It is shown that high-quality InP can be grown on Si by optimizing the thickness of a GaAs intermediate layer between the InP and Si. A combination of high speed and high sensitivity can be achieved with small-area InP/GaInAs heterojunction phototransistors grown on Si. High-purity InP-on-Si was grown with an electron mobility as high as 4000 cm/sup 2//V-s at 300 K and 25000 cm/sup 2//V-s at 77 K. The residual concentrations are as low as 6*10/sup 14/ cm/sup -3/. The quality of the material is confirmed by the fabrication of InP/GaInAs heterojunction phototransistors (HPTs) with optical gains of 125 A/W, dark currents as low as 300 pA, and bandwidths of 4.4 GHz.<>
{"title":"Growth of high purity InP and fabrication of high sensitivity InP/GaInAs heterojunction phototransistors on silicon by OMVPE","authors":"L. Aina, M. Mattingly, M. Burgess, J. O'connor, S. Shastry, D. Hill, J. Salerno, A. Davis, J. P. Lorenzo","doi":"10.1109/ICIPRM.1991.147307","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147307","url":null,"abstract":"The growth of high-purity InP on Si and the fabrication of high-speed and high-sensitivity InP/GaInAs heterojunction phototransistors using InP grown on Si by organometallic vapor-phase epitaxy (OMVPE) are described. It is shown that high-quality InP can be grown on Si by optimizing the thickness of a GaAs intermediate layer between the InP and Si. A combination of high speed and high sensitivity can be achieved with small-area InP/GaInAs heterojunction phototransistors grown on Si. High-purity InP-on-Si was grown with an electron mobility as high as 4000 cm/sup 2//V-s at 300 K and 25000 cm/sup 2//V-s at 77 K. The residual concentrations are as low as 6*10/sup 14/ cm/sup -3/. The quality of the material is confirmed by the fabrication of InP/GaInAs heterojunction phototransistors (HPTs) with optical gains of 125 A/W, dark currents as low as 300 pA, and bandwidths of 4.4 GHz.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"30 1","pages":"118-121"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85511623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147455
G. Landis, P. Jenkins, I. Weinberg
An apparatus that measures the minority carrier lifetime in InP is described. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence (PL) decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material was examined. The results show a marked difference in the lifetime on n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime.<>
{"title":"Photoluminescence lifetime measurements in InP wafers","authors":"G. Landis, P. Jenkins, I. Weinberg","doi":"10.1109/ICIPRM.1991.147455","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147455","url":null,"abstract":"An apparatus that measures the minority carrier lifetime in InP is described. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence (PL) decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material was examined. The results show a marked difference in the lifetime on n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"7 1","pages":"636-639"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80800522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147287
T. Gessert, X. Li, T. Coutts, P. W. Phelps, N. Tzafaras
The procedures and results of a project that produced large-area (4-cm/sup 2/) cells using the sputtering process used to form small-area indium tin oxide (ITO)/InP solar cells are described. Although only a small number of the 4-cm/sup 2/ ITO/InP cells (approximately 10 cells total) were fabricated, the efficiency of the best cell compares favorably with the best result reported from a larger production of approximately 1300 2-cm/sup 2/ cells in which the junction was fabricated through a closed-ampoule diffusion process. The average cell efficiency is determined to be 15.5%, with a standard deviation of 0.35%. The highest cell performance obtained is 16.1% AM0 (SERI measurement). Preliminary dark I-V data analysis indicates that the cells demonstrate near-ideal characteristics, with a diode-ideality factor and reverse-saturation current density of 1.02 and 1.1 *10/sup -12/ mAcm/sup -2/, respectively.<>
{"title":"Small-scale production of 4-cm/sup 2/ ITO/InP photovoltaic solar cells","authors":"T. Gessert, X. Li, T. Coutts, P. W. Phelps, N. Tzafaras","doi":"10.1109/ICIPRM.1991.147287","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147287","url":null,"abstract":"The procedures and results of a project that produced large-area (4-cm/sup 2/) cells using the sputtering process used to form small-area indium tin oxide (ITO)/InP solar cells are described. Although only a small number of the 4-cm/sup 2/ ITO/InP cells (approximately 10 cells total) were fabricated, the efficiency of the best cell compares favorably with the best result reported from a larger production of approximately 1300 2-cm/sup 2/ cells in which the junction was fabricated through a closed-ampoule diffusion process. The average cell efficiency is determined to be 15.5%, with a standard deviation of 0.35%. The highest cell performance obtained is 16.1% AM0 (SERI measurement). Preliminary dark I-V data analysis indicates that the cells demonstrate near-ideal characteristics, with a diode-ideality factor and reverse-saturation current density of 1.02 and 1.1 *10/sup -12/ mAcm/sup -2/, respectively.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"77 6 1","pages":"32-35"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78400762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147292
P. Drevinsky, C. E. Caefer, C. Keavney
The detection and characterization of processing- and radiation-induced defects in p-type InP using deep level transient spectroscopy (DLTS) are described. Annealing effects are discussed and initial recovery of critical cell parameters is correlated with anneal of dominant defects. It is shown that DLTS spectra differ for implanted and epitaxial junctions. The implanted diodes do not show the H4 (0.38 eV) level, casting doubt on the Frenkel pair, V/sub p/-P/sub i/, identity assignment. Carrier loss and degradation of V/sub oc/, I/sub sc/, and cell efficiency correlate with the production of dominant hole traps H4 and H3. Observed recovery correlates with anneal of H4 and H3.<>
描述了用深能级瞬态光谱(DLTS)检测和表征p型InP中加工和辐射诱导缺陷的方法。讨论了退火效应，关键胞参数的初始恢复与主要缺陷的退火有关。结果表明，植入结和外延结的dts光谱存在差异。植入的二极管不显示H4 (0.38 eV)水平，对Frenkel对，V/sub p/ p/ sub i/身份分配产生怀疑。载流子损耗、V/sub oc/、I/sub sc/的降解以及电池效率与优势空穴陷阱H4和H3的产生有关。观察到的回收率与H4和H3的退火有关。
{"title":"Processing- and radiation-produced defects in InP solar cells","authors":"P. Drevinsky, C. E. Caefer, C. Keavney","doi":"10.1109/ICIPRM.1991.147292","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147292","url":null,"abstract":"The detection and characterization of processing- and radiation-induced defects in p-type InP using deep level transient spectroscopy (DLTS) are described. Annealing effects are discussed and initial recovery of critical cell parameters is correlated with anneal of dominant defects. It is shown that DLTS spectra differ for implanted and epitaxial junctions. The implanted diodes do not show the H4 (0.38 eV) level, casting doubt on the Frenkel pair, V/sub p/-P/sub i/, identity assignment. Carrier loss and degradation of V/sub oc/, I/sub sc/, and cell efficiency correlate with the production of dominant hole traps H4 and H3. Observed recovery correlates with anneal of H4 and H3.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"49 1","pages":"56-59"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90779228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147362
M. Shahid, F. Simchock
A cost-effective process for growing
一种经济有效的生长过程
{"title":"Cost effective manufacturing of high quality","authors":"M. Shahid, F. Simchock","doi":"10.1109/ICIPRM.1991.147362","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147362","url":null,"abstract":"A cost-effective process for growing","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"319-322"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91330791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147414
K. Streubel, F. Scholz, V. Harle, M. Bode, M. Grundmann, J. Christen, D. Bimberg
GaInAs/InP quantum wells with thicknesses between two and ten monolayers were grown in order to study the interface structures in the vertical and lateral directions. The vertical structures and optical properties are shown to be strongly dependent on the growth interruptions used. The optical transitions are described by a theoretical model of the quantum well, which takes the interfaces into account. The monolayer splitting of very thin quantum wells was used to characterize the interface structures in the lateral plane. Scanning cathodoluminescence (SCL) images provide information on the size and lateral distribution of the growth islands. High resolution transmission electron microscopy (HRTEM) measurements show an internal interface roughness on both sides of the quantum wells.<>
{"title":"Determination of the interface structure of very thin GaInAs/InP quantum wells","authors":"K. Streubel, F. Scholz, V. Harle, M. Bode, M. Grundmann, J. Christen, D. Bimberg","doi":"10.1109/ICIPRM.1991.147414","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147414","url":null,"abstract":"GaInAs/InP quantum wells with thicknesses between two and ten monolayers were grown in order to study the interface structures in the vertical and lateral directions. The vertical structures and optical properties are shown to be strongly dependent on the growth interruptions used. The optical transitions are described by a theoretical model of the quantum well, which takes the interfaces into account. The monolayer splitting of very thin quantum wells was used to characterize the interface structures in the lateral plane. Scanning cathodoluminescence (SCL) images provide information on the size and lateral distribution of the growth islands. High resolution transmission electron microscopy (HRTEM) measurements show an internal interface roughness on both sides of the quantum wells.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"47 1","pages":"468-471"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86748703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147424
J.P. Estrera, W. Duncan, Y. Kao, H. Liu
Results of Fourier transform photoluminescence (FTPL), X-ray diffraction (XRD), micro-Raman spectroscopy, and photoreflectance (PR) nondestructive characterization measurements of In/sub x/Ga/sub 1-x/As grown by molecular beam epitaxy (MBE) on semi-insulating InP:Fe substates are presented. FTPL identified recombination processes at low and room temperature and carrier types of InGaAs films through correlation of 4.2 K and 293 K PL emissions. XRD measurements determine the extent of film relaxation and the composition. The strained nature of the InGaAs films is suggested by the correlation of low temperature PL bandgap energy and XRD composition. GaAs-like LO and TO modes and an InAs-like LO mode are identified by Raman scattering. Room temperature PR and PL bandgap energies show correlation within experimental error.<>
介绍了分子束外延(MBE)在半绝缘InP:Fe基体上生长In/sub x/Ga/sub 1-x/As的傅立叶变换光致发光(FTPL)、x射线衍射(XRD)、微拉曼光谱(microraman)和光反射率(PR)无损表征结果。FTPL通过4.2 K和293 K PL发射的相关性确定了低温和室温下的重组过程和InGaAs薄膜的载流子类型。XRD测定了薄膜松弛的程度和成分。低温PL带隙能与XRD组成的相关性表明了InGaAs薄膜的应变性质。通过拉曼散射确定了类gaas的LO和TO模式以及类inas的LO模式。室温PR和PL带隙能在实验误差范围内具有相关性
{"title":"High precision characterization in In/sub x/Ga/sub 1-x/As on InP","authors":"J.P. Estrera, W. Duncan, Y. Kao, H. Liu","doi":"10.1109/ICIPRM.1991.147424","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147424","url":null,"abstract":"Results of Fourier transform photoluminescence (FTPL), X-ray diffraction (XRD), micro-Raman spectroscopy, and photoreflectance (PR) nondestructive characterization measurements of In/sub x/Ga/sub 1-x/As grown by molecular beam epitaxy (MBE) on semi-insulating InP:Fe substates are presented. FTPL identified recombination processes at low and room temperature and carrier types of InGaAs films through correlation of 4.2 K and 293 K PL emissions. XRD measurements determine the extent of film relaxation and the composition. The strained nature of the InGaAs films is suggested by the correlation of low temperature PL bandgap energy and XRD composition. GaAs-like LO and TO modes and an InAs-like LO mode are identified by Raman scattering. Room temperature PR and PL bandgap energies show correlation within experimental error.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"74 1","pages":"507-510"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86367762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147304
J. Andrews, E. Vangieson, R. Enstrom, J.R. Appert, J. Kirk, N. Carlson
The growth of a distributed feedback (DFB) laser by two steps of organometallic chemical vapor deposition (OMCVD) epitaxy in which the feedback grating is a series of higher index of refraction InGaAsP segments (first growth) completely embedded in lower index InP (second growth) is reported. In the buried grating DFB (BG-DFB) laser, the coupling coefficient (Kl) of the laser optical mode to the feedback grating can be reproducibly and accurately adjusted by changing the thickness of the grating layer or the distance of the grating from the active region. The coupling coefficient can be adjusted over a large range without altering the waveguide parameters of the laser. The duty cycle (ratio of InGaAsP grating segment width to grating period) of the grating can be changed by adjusting the grating etch parameters. This provides another means to optimize the reflectivity and output coupling of second order gratings for grating surface emitter lasers.<>
{"title":"Buried grating distributed feedback laser at lambda =1.51 mu m","authors":"J. Andrews, E. Vangieson, R. Enstrom, J.R. Appert, J. Kirk, N. Carlson","doi":"10.1109/ICIPRM.1991.147304","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147304","url":null,"abstract":"The growth of a distributed feedback (DFB) laser by two steps of organometallic chemical vapor deposition (OMCVD) epitaxy in which the feedback grating is a series of higher index of refraction InGaAsP segments (first growth) completely embedded in lower index InP (second growth) is reported. In the buried grating DFB (BG-DFB) laser, the coupling coefficient (Kl) of the laser optical mode to the feedback grating can be reproducibly and accurately adjusted by changing the thickness of the grating layer or the distance of the grating from the active region. The coupling coefficient can be adjusted over a large range without altering the waveguide parameters of the laser. The duty cycle (ratio of InGaAsP grating segment width to grating period) of the grating can be changed by adjusting the grating etch parameters. This provides another means to optimize the reflectivity and output coupling of second order gratings for grating surface emitter lasers.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"245 1","pages":"106-109"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76981245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147288
C.C. Shen, P. Chang, K. A. Emory
The structure, epitaxial growth, and fabrication of a InP-based two-terminal monolithic tandem solar cell are described. The tandem solar cell consists of a p/n InP upper cell and a 0.95 eV p/n InGaAsP lower cell. A InGaAsP tunnel junction acts as the intercell ohmic contacts for the series connection of the two subcells. Evaluation results showing conversion efficiency as high as 14.8% obtained under 1 sun global AM 1.5 conditions are presented.<>
介绍了一种基于inp的双端单片串联太阳能电池的结构、外延生长和制造方法。串联太阳能电池由p/n InP上电池和0.95 eV p/n InGaAsP下电池组成。InGaAsP隧道结作为两个子单元串联连接的单元间欧姆接触。评价结果表明，在1个太阳全球AM 1.5条件下，转换效率高达14.8%。
{"title":"Two-terminal monolithic InP/InGaAsP tandem solar cells with tunneling intercell ohmic connections","authors":"C.C. Shen, P. Chang, K. A. Emory","doi":"10.1109/ICIPRM.1991.147288","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147288","url":null,"abstract":"The structure, epitaxial growth, and fabrication of a InP-based two-terminal monolithic tandem solar cell are described. The tandem solar cell consists of a p/n InP upper cell and a 0.95 eV p/n InGaAsP lower cell. A InGaAsP tunnel junction acts as the intercell ohmic contacts for the series connection of the two subcells. Evaluation results showing conversion efficiency as high as 14.8% obtained under 1 sun global AM 1.5 conditions are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"32 1","pages":"36-39"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77285529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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