Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147333
M. Mohrle, D. Grutzmacher, M. Rosenzweig, H. Duser
Measurements of the threshold current densities of 1.35 mu m InGaAs/InGaAsP MQW separate-confinement laser structures are presented. It is shown that the lowest values for the threshold current density can be obtained with barrier thicknesses between 10 and 15 nm. The extrapolated threshold current densities of the investigated structures varied between 780 and 1120 A-cm/sup -2/. depending on the number of wells. The characteristic temperature T/sub 0/ of the laser structures was about 60 K.<>
{"title":"Laser properties of 1.35 mu m InGaAs/InGaAsP-separate-confinement-multi-quantum-well-structures","authors":"M. Mohrle, D. Grutzmacher, M. Rosenzweig, H. Duser","doi":"10.1109/ICIPRM.1991.147333","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147333","url":null,"abstract":"Measurements of the threshold current densities of 1.35 mu m InGaAs/InGaAsP MQW separate-confinement laser structures are presented. It is shown that the lowest values for the threshold current density can be obtained with barrier thicknesses between 10 and 15 nm. The extrapolated threshold current densities of the investigated structures varied between 780 and 1120 A-cm/sup -2/. depending on the number of wells. The characteristic temperature T/sub 0/ of the laser structures was about 60 K.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"35 1","pages":"188-191"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78632188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147357
E. Kohn, J. Dickmann
The RF behavior of InP-based HEMT structures was evaluated using a feedback correlation. No evidence was found that the deep quantum well InAlAs/InGaAs/InAlAs configuration adds to improved feedback behavior through additional confinement of hot carriers. The model does show that a drift region with a large aspect ratio can develop, which can be traversed by electrons with overshoot velocity leading to high f/sub max//f/sub T/ ratios at high f/sub T/ in the devices. It is concluded that in the design of millimeter-wave InP-based HEMTs, the structural aspect ratio and the aspect ratio of the drift region at the bias region of operation have to be optimized to take maximum advantage of a long drift region combined with a high transit overshoot velocity in the device.<>
{"title":"Carrier confinement and feed-back correlation in InAlAs/InGaAs HEMTs on InP substrate","authors":"E. Kohn, J. Dickmann","doi":"10.1109/ICIPRM.1991.147357","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147357","url":null,"abstract":"The RF behavior of InP-based HEMT structures was evaluated using a feedback correlation. No evidence was found that the deep quantum well InAlAs/InGaAs/InAlAs configuration adds to improved feedback behavior through additional confinement of hot carriers. The model does show that a drift region with a large aspect ratio can develop, which can be traversed by electrons with overshoot velocity leading to high f/sub max//f/sub T/ ratios at high f/sub T/ in the devices. It is concluded that in the design of millimeter-wave InP-based HEMTs, the structural aspect ratio and the aspect ratio of the drift region at the bias region of operation have to be optimized to take maximum advantage of a long drift region combined with a high transit overshoot velocity in the device.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"39 1","pages":"296-299"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81213204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147436
N. Proust, M. Petitjean, J. Perrin
The preparation of high quality silicon nitride films by direct photolysis of NH/sub 3/-SiH/sub 4/ at low temperature and their deposition onto InP substrates are discussed. The atomic composition of the films is determined by nuclear analysis. In order to optimise bulk and interface properties quasi-static I(V) and C(V) characteristics measurements were performed on MIS diodes at 1 MHz. At 250 degrees C, a critical field of 4 MV/cm and a resistivity of 6*10/sup 15/ Omega -cm are observed. For annealed samples. a density of states of 4*10/sup 11/ cm/sup -2/ eV/sup -1/ is determined by Terman analysis. The fabrication of a preliminary InP depletion mode MISFET without a recess and N/sup +/ contact layer is described.<>
{"title":"Silicon nitride deposited by direct photolysis of NH/sub 3/ and SiH/sub 4/ at 185 nm and its application to InP MISFETs","authors":"N. Proust, M. Petitjean, J. Perrin","doi":"10.1109/ICIPRM.1991.147436","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147436","url":null,"abstract":"The preparation of high quality silicon nitride films by direct photolysis of NH/sub 3/-SiH/sub 4/ at low temperature and their deposition onto InP substrates are discussed. The atomic composition of the films is determined by nuclear analysis. In order to optimise bulk and interface properties quasi-static I(V) and C(V) characteristics measurements were performed on MIS diodes at 1 MHz. At 250 degrees C, a critical field of 4 MV/cm and a resistivity of 6*10/sup 15/ Omega -cm are observed. For annealed samples. a density of states of 4*10/sup 11/ cm/sup -2/ eV/sup -1/ is determined by Terman analysis. The fabrication of a preliminary InP depletion mode MISFET without a recess and N/sup +/ contact layer is described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"98 1","pages":"551-554"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79186752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147448
M. Tischler, B. D. Parker, J. DeGelormo, T. Jackson, F. Cardone, M. Goorsky
The effects of uncapped rapid thermal annealing in an AsH/sub 3/ ambient on the thermal stability of InGaAs/InAlAs two dimensional electron gas (2DEG) structures are discussed. It is shown that the rapid thermal annealing results in the formation of a parasitic charge near the back of the InGaAs channel. The annealing does not result in large changes in the heterostructure or the intentional dopant position.<>
{"title":"Thermal stability of MBE-grown Si-doped InGaAs/InAlAs heterostructures","authors":"M. Tischler, B. D. Parker, J. DeGelormo, T. Jackson, F. Cardone, M. Goorsky","doi":"10.1109/ICIPRM.1991.147448","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147448","url":null,"abstract":"The effects of uncapped rapid thermal annealing in an AsH/sub 3/ ambient on the thermal stability of InGaAs/InAlAs two dimensional electron gas (2DEG) structures are discussed. It is shown that the rapid thermal annealing results in the formation of a parasitic charge near the back of the InGaAs channel. The annealing does not result in large changes in the heterostructure or the intentional dopant position.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"85 1","pages":"602-605"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89732316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147408
D. Spear, W. Lee, A. Smith, P. Dawe, M. Geear, S. Bland
The fabrication and performance characteristics of a linear 16-element InGaAs/InP PIN photodetector array suitable for 1.3-1.6 mu m wavelength applications are described. The detector design relies on a grown pn junction for the diode and avoids producing exposed InGaAs junctions, which are difficult to passivate. The array fabrication procedure is fully compatible with future monolithic integration with InP-based electronics. A satisfactory yield of good arrays has been obtained. Optical crosstalk measurements were performed at DC and RF with the array mounted in a grating demultiplexer.<>
{"title":"16-element grown-junction InGaAs/InP PIN photodetector arrays on 2\" diameter InP substrates","authors":"D. Spear, W. Lee, A. Smith, P. Dawe, M. Geear, S. Bland","doi":"10.1109/ICIPRM.1991.147408","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147408","url":null,"abstract":"The fabrication and performance characteristics of a linear 16-element InGaAs/InP PIN photodetector array suitable for 1.3-1.6 mu m wavelength applications are described. The detector design relies on a grown pn junction for the diode and avoids producing exposed InGaAs junctions, which are difficult to passivate. The array fabrication procedure is fully compatible with future monolithic integration with InP-based electronics. A satisfactory yield of good arrays has been obtained. Optical crosstalk measurements were performed at DC and RF with the array mounted in a grating demultiplexer.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"4 1","pages":"444-446"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82142489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147302
E. Rao, A. Ougazzaden, Y. Gao, H. Thibierge, A. Pougnet, A. Mircea, E. Lugagne-Delpond, P. Voisin
The photoluminescence (PL) properties of InGaAs-InGaAsP multiquantum well (MQW) structures for laser devices emitting in the approximately 1.55 mu m wavelength region are discussed. Different PL techniques, such as spectral analysis for studying interface quality, spatially and spectrally resolved cartography measurements for recording peak intensity distributions, and large-area topography for defect detection, have been applied to monitor the properties of as-grown and processed structures. After establishing the good quality of the as-grown structures, it is shown that the second epitaxial growth sequence or re-growth for realizing laser devices is a crucial processing step and that its optimization should take into consideration the doping level of Zn impurity.<>
{"title":"Photoluminescence investigation of InGaAs-InGaAsP multiquantum wells for laser devices","authors":"E. Rao, A. Ougazzaden, Y. Gao, H. Thibierge, A. Pougnet, A. Mircea, E. Lugagne-Delpond, P. Voisin","doi":"10.1109/ICIPRM.1991.147302","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147302","url":null,"abstract":"The photoluminescence (PL) properties of InGaAs-InGaAsP multiquantum well (MQW) structures for laser devices emitting in the approximately 1.55 mu m wavelength region are discussed. Different PL techniques, such as spectral analysis for studying interface quality, spatially and spectrally resolved cartography measurements for recording peak intensity distributions, and large-area topography for defect detection, have been applied to monitor the properties of as-grown and processed structures. After establishing the good quality of the as-grown structures, it is shown that the second epitaxial growth sequence or re-growth for realizing laser devices is a crucial processing step and that its optimization should take into consideration the doping level of Zn impurity.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"111 1","pages":"97-100"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80666866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147402
E. Kuhn, C. Hache, D. Kaiser, G. Laube, P. Speier, F. Tegude, K. Wunstel
The monolithic integration of a double heterostructure bipolar transistor (DHBT) with a 1.3- mu m semi-insulating buried heterostructure (SI-BH) laser realized with InP/InGaAs(P) is discussed. The integration is based on a SI-BH laser with laterally grown SI-InP current blocking layers and an invertible DHBT with underlying SI-InP. For the growth process of the SI-InP as well as the DHBT-layers, a selective, planarizing metalorganic vapor-phase epitaxy (MOVPE) process is used. For nonoptimized devices, large signal operation up to 600 Mb/s and 5 mW optical power per facet has been demonstrated. The DC and RF characteristics of the transmitter are presented.<>
{"title":"Monolithic integrated laser DHBT OEICs for optical fibre communication","authors":"E. Kuhn, C. Hache, D. Kaiser, G. Laube, P. Speier, F. Tegude, K. Wunstel","doi":"10.1109/ICIPRM.1991.147402","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147402","url":null,"abstract":"The monolithic integration of a double heterostructure bipolar transistor (DHBT) with a 1.3- mu m semi-insulating buried heterostructure (SI-BH) laser realized with InP/InGaAs(P) is discussed. The integration is based on a SI-BH laser with laterally grown SI-InP current blocking layers and an invertible DHBT with underlying SI-InP. For the growth process of the SI-InP as well as the DHBT-layers, a selective, planarizing metalorganic vapor-phase epitaxy (MOVPE) process is used. For nonoptimized devices, large signal operation up to 600 Mb/s and 5 mW optical power per facet has been demonstrated. The DC and RF characteristics of the transmitter are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"16 1","pages":"419-422"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80761262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147443
N. Yasuoka, T. Sanada, H. Hamaguchi, M. Makiuchi, T. Mikawa, A. Kuramata, O. Wada, R. Deri
The structure and characteristics of a monolithic coherent receiver with an integrated waveguide coupler and a balanced pair of lateral PIN photodiodes are described. The lateral PIN photodiode is shown to have an improved structure and exhibits a 3-dB bandwidth of 2 GHz. Heterodyne detection at 1.8 GHz with this monolithic receiver is discussed.<>
{"title":"High-speed monolithic coherent optical receiver with a waveguide coupler and lateral PIN photodiodes integrated on a InP substrate","authors":"N. Yasuoka, T. Sanada, H. Hamaguchi, M. Makiuchi, T. Mikawa, A. Kuramata, O. Wada, R. Deri","doi":"10.1109/ICIPRM.1991.147443","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147443","url":null,"abstract":"The structure and characteristics of a monolithic coherent receiver with an integrated waveguide coupler and a balanced pair of lateral PIN photodiodes are described. The lateral PIN photodiode is shown to have an improved structure and exhibits a 3-dB bandwidth of 2 GHz. Heterodyne detection at 1.8 GHz with this monolithic receiver is discussed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"20 1","pages":"580-583"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90614054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147344
M. Ohkubo, A. Iketani, T. Ijichi, T. Kikuta
The fabrication of InGaAs/InP double-heterojunction bipolar transistors (D-HBTs) grown by metal organic chemical vapor deposition (MOCVD) is described. With graded-InGaAsP layers inserted between the p/sup +/ InGaAs base and n/sup -/ InP collector, the current gain of D-HBTs with graded layers was found to be about twice as large as that of D-HBTs without graded layers, and the dependence of collector current on collector/emitter voltage was smaller than without graded layers. The current gain was measured up to 2300 with 25*25 mu m/sup 2/ emitter area at a collector current density of 1*10/sup 4/ A/cm/sup 2/.<>
{"title":"InGaAs/InP double-heterojunction bipolar transistors with graded-InGaAsP between InGaAs base and InP collector grown by metal organic chemical vapor deposition","authors":"M. Ohkubo, A. Iketani, T. Ijichi, T. Kikuta","doi":"10.1109/ICIPRM.1991.147344","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147344","url":null,"abstract":"The fabrication of InGaAs/InP double-heterojunction bipolar transistors (D-HBTs) grown by metal organic chemical vapor deposition (MOCVD) is described. With graded-InGaAsP layers inserted between the p/sup +/ InGaAs base and n/sup -/ InP collector, the current gain of D-HBTs with graded layers was found to be about twice as large as that of D-HBTs without graded layers, and the dependence of collector current on collector/emitter voltage was smaller than without graded layers. The current gain was measured up to 2300 with 25*25 mu m/sup 2/ emitter area at a collector current density of 1*10/sup 4/ A/cm/sup 2/.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"28 1","pages":"234-237"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90722092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147453
T. Sugino, H. Yamamoto, T. Yamada, H. Ninomiya, Y. Sakamoto, K. Matsuda, J. Shirafuji
Effects of H/sub 2/ and PH/sub 3/ plasma treatment of the InP surface on the Schottky barrier junction characteristics are discussed. Au/n-InP Schottky junctions with barrier heights as high as 0.7 eV were achieved by surface treatment with H/sub 2/ and PH/sub 3/ plasma. It is shown that this enhancement of the barrier height is partly due to weakening of the surface Fermi level pinning and partly due to the forming of a thin oxide film or a thin P layer. Deep levels at 0.21 and 0.51 eV below the conduction band are generated at and near the surface of InP during H/sub 2/ plasma treatment. These traps are not observed in the case of PH/sub 3/ plasma treatment.<>
{"title":"Characteristics of Schottky junctions on H/sub 2-/ and PH/sub 3-/plasma treated InP","authors":"T. Sugino, H. Yamamoto, T. Yamada, H. Ninomiya, Y. Sakamoto, K. Matsuda, J. Shirafuji","doi":"10.1109/ICIPRM.1991.147453","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147453","url":null,"abstract":"Effects of H/sub 2/ and PH/sub 3/ plasma treatment of the InP surface on the Schottky barrier junction characteristics are discussed. Au/n-InP Schottky junctions with barrier heights as high as 0.7 eV were achieved by surface treatment with H/sub 2/ and PH/sub 3/ plasma. It is shown that this enhancement of the barrier height is partly due to weakening of the surface Fermi level pinning and partly due to the forming of a thin oxide film or a thin P layer. Deep levels at 0.21 and 0.51 eV below the conduction band are generated at and near the surface of InP during H/sub 2/ plasma treatment. These traps are not observed in the case of PH/sub 3/ plasma treatment.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"178 1","pages":"626-629"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85549451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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