Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147408
D. Spear, W. Lee, A. Smith, P. Dawe, M. Geear, S. Bland
The fabrication and performance characteristics of a linear 16-element InGaAs/InP PIN photodetector array suitable for 1.3-1.6 mu m wavelength applications are described. The detector design relies on a grown pn junction for the diode and avoids producing exposed InGaAs junctions, which are difficult to passivate. The array fabrication procedure is fully compatible with future monolithic integration with InP-based electronics. A satisfactory yield of good arrays has been obtained. Optical crosstalk measurements were performed at DC and RF with the array mounted in a grating demultiplexer.<>
{"title":"16-element grown-junction InGaAs/InP PIN photodetector arrays on 2\" diameter InP substrates","authors":"D. Spear, W. Lee, A. Smith, P. Dawe, M. Geear, S. Bland","doi":"10.1109/ICIPRM.1991.147408","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147408","url":null,"abstract":"The fabrication and performance characteristics of a linear 16-element InGaAs/InP PIN photodetector array suitable for 1.3-1.6 mu m wavelength applications are described. The detector design relies on a grown pn junction for the diode and avoids producing exposed InGaAs junctions, which are difficult to passivate. The array fabrication procedure is fully compatible with future monolithic integration with InP-based electronics. A satisfactory yield of good arrays has been obtained. Optical crosstalk measurements were performed at DC and RF with the array mounted in a grating demultiplexer.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"4 1","pages":"444-446"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82142489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147402
E. Kuhn, C. Hache, D. Kaiser, G. Laube, P. Speier, F. Tegude, K. Wunstel
The monolithic integration of a double heterostructure bipolar transistor (DHBT) with a 1.3- mu m semi-insulating buried heterostructure (SI-BH) laser realized with InP/InGaAs(P) is discussed. The integration is based on a SI-BH laser with laterally grown SI-InP current blocking layers and an invertible DHBT with underlying SI-InP. For the growth process of the SI-InP as well as the DHBT-layers, a selective, planarizing metalorganic vapor-phase epitaxy (MOVPE) process is used. For nonoptimized devices, large signal operation up to 600 Mb/s and 5 mW optical power per facet has been demonstrated. The DC and RF characteristics of the transmitter are presented.<>
{"title":"Monolithic integrated laser DHBT OEICs for optical fibre communication","authors":"E. Kuhn, C. Hache, D. Kaiser, G. Laube, P. Speier, F. Tegude, K. Wunstel","doi":"10.1109/ICIPRM.1991.147402","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147402","url":null,"abstract":"The monolithic integration of a double heterostructure bipolar transistor (DHBT) with a 1.3- mu m semi-insulating buried heterostructure (SI-BH) laser realized with InP/InGaAs(P) is discussed. The integration is based on a SI-BH laser with laterally grown SI-InP current blocking layers and an invertible DHBT with underlying SI-InP. For the growth process of the SI-InP as well as the DHBT-layers, a selective, planarizing metalorganic vapor-phase epitaxy (MOVPE) process is used. For nonoptimized devices, large signal operation up to 600 Mb/s and 5 mW optical power per facet has been demonstrated. The DC and RF characteristics of the transmitter are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"16 1","pages":"419-422"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80761262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147446
J. Marsh, S. Bradshaw, A. Bryce, R. Gwilliam, R. Glew
The use of fluorine and boron to disorder two material systems for use at 1.5 mu m, GaInAs/AlGaInAs and GaInAs/GaInAsP, both lattice-matched to InP, is discussed. Three structures are investigated: two GaInAsP multiple quantum well (MQW) structures, a separate confinement heterostructure (SCH) and a graded index structure (GRIN), and an AlGaInAs MQW structure. It is shown that the P-quaternary disorders without any implants at annealing temperatures above 500 degrees C, and the Al-quaternary is stable up to annealing temperatures of 650 degrees C. At annealing temperatures of 600 degrees C for the P and 650 degrees C for the Al quaternary. boron causes some intermixing, probably due to the damage caused by implantation. A significant blue shift was achieved in material implanted with fluorine while, under the same annealing conditions, the control samples remained unchanged.<>
{"title":"Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP (MQW waveguides)","authors":"J. Marsh, S. Bradshaw, A. Bryce, R. Gwilliam, R. Glew","doi":"10.1109/ICIPRM.1991.147446","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147446","url":null,"abstract":"The use of fluorine and boron to disorder two material systems for use at 1.5 mu m, GaInAs/AlGaInAs and GaInAs/GaInAsP, both lattice-matched to InP, is discussed. Three structures are investigated: two GaInAsP multiple quantum well (MQW) structures, a separate confinement heterostructure (SCH) and a graded index structure (GRIN), and an AlGaInAs MQW structure. It is shown that the P-quaternary disorders without any implants at annealing temperatures above 500 degrees C, and the Al-quaternary is stable up to annealing temperatures of 650 degrees C. At annealing temperatures of 600 degrees C for the P and 650 degrees C for the Al quaternary. boron causes some intermixing, probably due to the damage caused by implantation. A significant blue shift was achieved in material implanted with fluorine while, under the same annealing conditions, the control samples remained unchanged.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"2 1","pages":"592-595"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81911263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147333
M. Mohrle, D. Grutzmacher, M. Rosenzweig, H. Duser
Measurements of the threshold current densities of 1.35 mu m InGaAs/InGaAsP MQW separate-confinement laser structures are presented. It is shown that the lowest values for the threshold current density can be obtained with barrier thicknesses between 10 and 15 nm. The extrapolated threshold current densities of the investigated structures varied between 780 and 1120 A-cm/sup -2/. depending on the number of wells. The characteristic temperature T/sub 0/ of the laser structures was about 60 K.<>
{"title":"Laser properties of 1.35 mu m InGaAs/InGaAsP-separate-confinement-multi-quantum-well-structures","authors":"M. Mohrle, D. Grutzmacher, M. Rosenzweig, H. Duser","doi":"10.1109/ICIPRM.1991.147333","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147333","url":null,"abstract":"Measurements of the threshold current densities of 1.35 mu m InGaAs/InGaAsP MQW separate-confinement laser structures are presented. It is shown that the lowest values for the threshold current density can be obtained with barrier thicknesses between 10 and 15 nm. The extrapolated threshold current densities of the investigated structures varied between 780 and 1120 A-cm/sup -2/. depending on the number of wells. The characteristic temperature T/sub 0/ of the laser structures was about 60 K.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"35 1","pages":"188-191"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78632188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147436
N. Proust, M. Petitjean, J. Perrin
The preparation of high quality silicon nitride films by direct photolysis of NH/sub 3/-SiH/sub 4/ at low temperature and their deposition onto InP substrates are discussed. The atomic composition of the films is determined by nuclear analysis. In order to optimise bulk and interface properties quasi-static I(V) and C(V) characteristics measurements were performed on MIS diodes at 1 MHz. At 250 degrees C, a critical field of 4 MV/cm and a resistivity of 6*10/sup 15/ Omega -cm are observed. For annealed samples. a density of states of 4*10/sup 11/ cm/sup -2/ eV/sup -1/ is determined by Terman analysis. The fabrication of a preliminary InP depletion mode MISFET without a recess and N/sup +/ contact layer is described.<>
{"title":"Silicon nitride deposited by direct photolysis of NH/sub 3/ and SiH/sub 4/ at 185 nm and its application to InP MISFETs","authors":"N. Proust, M. Petitjean, J. Perrin","doi":"10.1109/ICIPRM.1991.147436","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147436","url":null,"abstract":"The preparation of high quality silicon nitride films by direct photolysis of NH/sub 3/-SiH/sub 4/ at low temperature and their deposition onto InP substrates are discussed. The atomic composition of the films is determined by nuclear analysis. In order to optimise bulk and interface properties quasi-static I(V) and C(V) characteristics measurements were performed on MIS diodes at 1 MHz. At 250 degrees C, a critical field of 4 MV/cm and a resistivity of 6*10/sup 15/ Omega -cm are observed. For annealed samples. a density of states of 4*10/sup 11/ cm/sup -2/ eV/sup -1/ is determined by Terman analysis. The fabrication of a preliminary InP depletion mode MISFET without a recess and N/sup +/ contact layer is described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"98 1","pages":"551-554"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79186752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147343
B. Jalali, R. Nottenburg, M. Banu, R. Montgomery, A. Levi, M. Panish, A. Cho
An overview of the InGaAs heterostructure bipolar transistor (HBT) technology for applications in high speed electronics is presented. Properties of both Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As and InP-In/sub 0.53/Ga/sub 0.47/As heterostructure systems, important for integrated circuit applications are discussed. Examples of high speed and low power integrated circuits that are relevant for lightwave communication technology are described.<>
{"title":"High speed InGaAs HBT devices and circuits","authors":"B. Jalali, R. Nottenburg, M. Banu, R. Montgomery, A. Levi, M. Panish, A. Cho","doi":"10.1109/ICIPRM.1991.147343","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147343","url":null,"abstract":"An overview of the InGaAs heterostructure bipolar transistor (HBT) technology for applications in high speed electronics is presented. Properties of both Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As and InP-In/sub 0.53/Ga/sub 0.47/As heterostructure systems, important for integrated circuit applications are discussed. Examples of high speed and low power integrated circuits that are relevant for lightwave communication technology are described.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"228-233"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72741943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147341
R. Gessner, M. Beschorner, M. Druminski
The growth of (Al)GaInAs/Al(Ga)InAs structures of high quality for laser devices using metalorganic vapor-phase epitaxy (MOVPE) at atmospheric pressure is described. SeH/sub 2/ and DEZn have been used as the dopant precursors. Se is an appropriate dopant for the n-type confinement layers of lasers, showing a distinctly higher electrical activation in AlInAs than Si. Zn is superior to Mg as a dopant for the p-type confinement layers of lasers as its apparent diffusion coefficient is about one order of magnitude lower than that of Mg in AlInAs. Broad-area double-heterostructure (DH) lasers (device length=800 mu m) operating at 1.66 mu m and 1.55 mu m are shown to have I/sub th/ values as low as 2.3 kA cm/sup 2/ and 1.5 kA/cm/sup 2/, respectively. With broad-area separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers (device length=800 mu m) emitting at 1.524 mu m, threshold current densities as low is 0.92 kA/cm/sup 2/ can be achieved.<>
{"title":"Very low threshold current density (Al)GaInAs/Al(Ga)InAs laser structures grown by atmospheric pressure MOVPE","authors":"R. Gessner, M. Beschorner, M. Druminski","doi":"10.1109/ICIPRM.1991.147341","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147341","url":null,"abstract":"The growth of (Al)GaInAs/Al(Ga)InAs structures of high quality for laser devices using metalorganic vapor-phase epitaxy (MOVPE) at atmospheric pressure is described. SeH/sub 2/ and DEZn have been used as the dopant precursors. Se is an appropriate dopant for the n-type confinement layers of lasers, showing a distinctly higher electrical activation in AlInAs than Si. Zn is superior to Mg as a dopant for the p-type confinement layers of lasers as its apparent diffusion coefficient is about one order of magnitude lower than that of Mg in AlInAs. Broad-area double-heterostructure (DH) lasers (device length=800 mu m) operating at 1.66 mu m and 1.55 mu m are shown to have I/sub th/ values as low as 2.3 kA cm/sup 2/ and 1.5 kA/cm/sup 2/, respectively. With broad-area separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers (device length=800 mu m) emitting at 1.524 mu m, threshold current densities as low is 0.92 kA/cm/sup 2/ can be achieved.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"220-223"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74871037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147443
N. Yasuoka, T. Sanada, H. Hamaguchi, M. Makiuchi, T. Mikawa, A. Kuramata, O. Wada, R. Deri
The structure and characteristics of a monolithic coherent receiver with an integrated waveguide coupler and a balanced pair of lateral PIN photodiodes are described. The lateral PIN photodiode is shown to have an improved structure and exhibits a 3-dB bandwidth of 2 GHz. Heterodyne detection at 1.8 GHz with this monolithic receiver is discussed.<>
{"title":"High-speed monolithic coherent optical receiver with a waveguide coupler and lateral PIN photodiodes integrated on a InP substrate","authors":"N. Yasuoka, T. Sanada, H. Hamaguchi, M. Makiuchi, T. Mikawa, A. Kuramata, O. Wada, R. Deri","doi":"10.1109/ICIPRM.1991.147443","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147443","url":null,"abstract":"The structure and characteristics of a monolithic coherent receiver with an integrated waveguide coupler and a balanced pair of lateral PIN photodiodes are described. The lateral PIN photodiode is shown to have an improved structure and exhibits a 3-dB bandwidth of 2 GHz. Heterodyne detection at 1.8 GHz with this monolithic receiver is discussed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"20 1","pages":"580-583"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90614054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147344
M. Ohkubo, A. Iketani, T. Ijichi, T. Kikuta
The fabrication of InGaAs/InP double-heterojunction bipolar transistors (D-HBTs) grown by metal organic chemical vapor deposition (MOCVD) is described. With graded-InGaAsP layers inserted between the p/sup +/ InGaAs base and n/sup -/ InP collector, the current gain of D-HBTs with graded layers was found to be about twice as large as that of D-HBTs without graded layers, and the dependence of collector current on collector/emitter voltage was smaller than without graded layers. The current gain was measured up to 2300 with 25*25 mu m/sup 2/ emitter area at a collector current density of 1*10/sup 4/ A/cm/sup 2/.<>
{"title":"InGaAs/InP double-heterojunction bipolar transistors with graded-InGaAsP between InGaAs base and InP collector grown by metal organic chemical vapor deposition","authors":"M. Ohkubo, A. Iketani, T. Ijichi, T. Kikuta","doi":"10.1109/ICIPRM.1991.147344","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147344","url":null,"abstract":"The fabrication of InGaAs/InP double-heterojunction bipolar transistors (D-HBTs) grown by metal organic chemical vapor deposition (MOCVD) is described. With graded-InGaAsP layers inserted between the p/sup +/ InGaAs base and n/sup -/ InP collector, the current gain of D-HBTs with graded layers was found to be about twice as large as that of D-HBTs without graded layers, and the dependence of collector current on collector/emitter voltage was smaller than without graded layers. The current gain was measured up to 2300 with 25*25 mu m/sup 2/ emitter area at a collector current density of 1*10/sup 4/ A/cm/sup 2/.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"28 1","pages":"234-237"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90722092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147453
T. Sugino, H. Yamamoto, T. Yamada, H. Ninomiya, Y. Sakamoto, K. Matsuda, J. Shirafuji
Effects of H/sub 2/ and PH/sub 3/ plasma treatment of the InP surface on the Schottky barrier junction characteristics are discussed. Au/n-InP Schottky junctions with barrier heights as high as 0.7 eV were achieved by surface treatment with H/sub 2/ and PH/sub 3/ plasma. It is shown that this enhancement of the barrier height is partly due to weakening of the surface Fermi level pinning and partly due to the forming of a thin oxide film or a thin P layer. Deep levels at 0.21 and 0.51 eV below the conduction band are generated at and near the surface of InP during H/sub 2/ plasma treatment. These traps are not observed in the case of PH/sub 3/ plasma treatment.<>
{"title":"Characteristics of Schottky junctions on H/sub 2-/ and PH/sub 3-/plasma treated InP","authors":"T. Sugino, H. Yamamoto, T. Yamada, H. Ninomiya, Y. Sakamoto, K. Matsuda, J. Shirafuji","doi":"10.1109/ICIPRM.1991.147453","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147453","url":null,"abstract":"Effects of H/sub 2/ and PH/sub 3/ plasma treatment of the InP surface on the Schottky barrier junction characteristics are discussed. Au/n-InP Schottky junctions with barrier heights as high as 0.7 eV were achieved by surface treatment with H/sub 2/ and PH/sub 3/ plasma. It is shown that this enhancement of the barrier height is partly due to weakening of the surface Fermi level pinning and partly due to the forming of a thin oxide film or a thin P layer. Deep levels at 0.21 and 0.51 eV below the conduction band are generated at and near the surface of InP during H/sub 2/ plasma treatment. These traps are not observed in the case of PH/sub 3/ plasma treatment.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"178 1","pages":"626-629"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85549451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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