Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147428
C. L. Griffiths, R. Williams
The growth of crack-free single crystal layers of the insulator LaF/sub 3/ on the
绝缘子LaF/sub 3/上无裂纹单晶层的生长
{"title":"The growth and characterization of epitaxial single crystal LaF/sub 3/ on InP","authors":"C. L. Griffiths, R. Williams","doi":"10.1109/ICIPRM.1991.147428","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147428","url":null,"abstract":"The growth of crack-free single crystal layers of the insulator LaF/sub 3/ on the","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"28 1","pages":"523-526"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84258412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147317
R. Walters, R.L. Statler, G. Summers
I-V curve measurements of high efficiency InP solar cells that were illuminated in a deep level transient spectrometer (DLTS) cryostat which allowed precise control of the cell temperature from 90 to 400 K are discussed. A set of temperature variation coefficients for the photovoltaic parameters consistent over all the cells and a clear characterization of the damage induced in the cells by proton irradiation are described. The radiation induced defects were first measured by DLTS on the actual solar cells, and then I-V measurements were done at 90 K. It is shown that, at this low temperature, the I-V measurement did not induce injection annealing. The measurements were repeated following forward bias injection annealing of the solar cell. The results show the actual DLTS spectrum corresponding to the changes in the solar cell performance.<>
{"title":"Temperature dependence of the electrical characteristics and radiation damage in MOCVD grown n/sup +/p InP solar cells","authors":"R. Walters, R.L. Statler, G. Summers","doi":"10.1109/ICIPRM.1991.147317","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147317","url":null,"abstract":"I-V curve measurements of high efficiency InP solar cells that were illuminated in a deep level transient spectrometer (DLTS) cryostat which allowed precise control of the cell temperature from 90 to 400 K are discussed. A set of temperature variation coefficients for the photovoltaic parameters consistent over all the cells and a clear characterization of the damage induced in the cells by proton irradiation are described. The radiation induced defects were first measured by DLTS on the actual solar cells, and then I-V measurements were done at 90 K. It is shown that, at this low temperature, the I-V measurement did not induce injection annealing. The measurements were repeated following forward bias injection annealing of the solar cell. The results show the actual DLTS spectrum corresponding to the changes in the solar cell performance.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"95 1","pages":"154-158"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85224725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147335
T. I. Ejim
The growth of large diameter twin-free InP single crystals in the
大直径无双晶InP单晶的生长
{"title":"Growth of","authors":"T. I. Ejim","doi":"10.1109/ICIPRM.1991.147335","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147335","url":null,"abstract":"The growth of large diameter twin-free InP single crystals in the","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"196-199"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82095379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147413
R. Leon, M. Kamińska, Z. Liliental-Weber, K. Yu, M. Chandramouli, E. Weber
Results from electrical measurements, as well as lattice site determination, structural, and X-ray energy dispersive studies of Cu doping on InP, are presented. Hall measurements of carrier concentration as a function of inverse temperature show that InP:Cu exhibits semi-insulating behavior after diffusion with Cu at temperatures exceeding 700 degrees C. Similar measurements of carrier concentration and mobility show that samples exhibited properties typical of hopping conductivity when diffused at temperatures below 700 degrees C. Particle induced X-ray emission (PIXE) performed with channeling in the <110>, <100>, and <111> directions shows a random distribution of Cu, which is typically seen when precipitates are present. Transmission electron microscopy (TEM) indicates the presence of numerous small spherical crystalline precipitates in the samples, and microdiffraction and energy dispersion spectroscopy (EDS) analysis indicates that the most probable phase of these precipitates is In/sub x/Cu.<>
{"title":"Semi-insulating behavior of Cu doped InP","authors":"R. Leon, M. Kamińska, Z. Liliental-Weber, K. Yu, M. Chandramouli, E. Weber","doi":"10.1109/ICIPRM.1991.147413","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147413","url":null,"abstract":"Results from electrical measurements, as well as lattice site determination, structural, and X-ray energy dispersive studies of Cu doping on InP, are presented. Hall measurements of carrier concentration as a function of inverse temperature show that InP:Cu exhibits semi-insulating behavior after diffusion with Cu at temperatures exceeding 700 degrees C. Similar measurements of carrier concentration and mobility show that samples exhibited properties typical of hopping conductivity when diffused at temperatures below 700 degrees C. Particle induced X-ray emission (PIXE) performed with channeling in the <110>, <100>, and <111> directions shows a random distribution of Cu, which is typically seen when precipitates are present. Transmission electron microscopy (TEM) indicates the presence of numerous small spherical crystalline precipitates in the samples, and microdiffraction and energy dispersion spectroscopy (EDS) analysis indicates that the most probable phase of these precipitates is In/sub x/Cu.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"59 1","pages":"464-467"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84118506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147454
H. Hasegawa, M. Akazawa, E. Ohue
The growth of a surface passivation structure for In/sub 0.53/Ga/sub 0.47/As that utilizes an ultrathin molecular beam epitaxial (MBE) Si interface control layer (ICL) is discussed. The structure was realized by growing all the layers, including the MBE InGaAs layer, the MBE-Si ICL, and the outer photo-CVD SiO/sub 2/ layer, in a UHV-based system without air exposure. It is shown that by utilizing a suitable surface treatment technique prior to the growth of the Si ICL, the surface passivation technology becomes applicable to air-exposed InGaAs surfaces.<>
{"title":"Passivation technology using an ultrathin Si interface control layer for air-exposed InGaAs surfaces","authors":"H. Hasegawa, M. Akazawa, E. Ohue","doi":"10.1109/ICIPRM.1991.147454","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147454","url":null,"abstract":"The growth of a surface passivation structure for In/sub 0.53/Ga/sub 0.47/As that utilizes an ultrathin molecular beam epitaxial (MBE) Si interface control layer (ICL) is discussed. The structure was realized by growing all the layers, including the MBE InGaAs layer, the MBE-Si ICL, and the outer photo-CVD SiO/sub 2/ layer, in a UHV-based system without air exposure. It is shown that by utilizing a suitable surface treatment technique prior to the growth of the Si ICL, the surface passivation technology becomes applicable to air-exposed InGaAs surfaces.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"101 1","pages":"630-633"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80398911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147433
Z. Shi, R. Wallace, W. Anderson
The formation of ultra-high barrier height ( phi /sub B/=0.96 eV) Schottky contacts to n-InP, without an intentionally grown interfacial oxide, using metal deposition on a substrate cooled to as low as 77 K is discussed. Values of phi /sub B/=0.46-0.52 eV for diodes deposited at room temperature (RT=300 K) agree and give an ideality factor near unity. For diodes deposited at a low temperature (LT) of 77 K, the leakage current density (J/sub 0/) is reduced by more than 6-7 orders of magnitude with respect to the RT diodes. The phi /sub B/ for the LT diodes is increased from 0.48 to 0.96 eV for Pd metal and from 0.51 to 0.85 eV for Au metal, respectively. The conduction mechanisms for the LT and RT diodes are found to be controlled by thermionic-field emission (TFE) and thermionic emission (TE), respectively. It is shown that an alteration of the metal-induced interface states, inhibition of surface segregation of the released In and P atoms, and very uniform metal coverage may be responsible for the distinct differences between the RT and LT diodes.<>
{"title":"High barrier height Schottky diodes on n-InP by low temperature deposition","authors":"Z. Shi, R. Wallace, W. Anderson","doi":"10.1109/ICIPRM.1991.147433","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147433","url":null,"abstract":"The formation of ultra-high barrier height ( phi /sub B/=0.96 eV) Schottky contacts to n-InP, without an intentionally grown interfacial oxide, using metal deposition on a substrate cooled to as low as 77 K is discussed. Values of phi /sub B/=0.46-0.52 eV for diodes deposited at room temperature (RT=300 K) agree and give an ideality factor near unity. For diodes deposited at a low temperature (LT) of 77 K, the leakage current density (J/sub 0/) is reduced by more than 6-7 orders of magnitude with respect to the RT diodes. The phi /sub B/ for the LT diodes is increased from 0.48 to 0.96 eV for Pd metal and from 0.51 to 0.85 eV for Au metal, respectively. The conduction mechanisms for the LT and RT diodes are found to be controlled by thermionic-field emission (TFE) and thermionic emission (TE), respectively. It is shown that an alteration of the metal-induced interface states, inhibition of surface segregation of the released In and P atoms, and very uniform metal coverage may be responsible for the distinct differences between the RT and LT diodes.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"7 1","pages":"539-542"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86621329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147285
G. Hirt, D. Hofmann, F. Mosel, N. Schafer, G. Muller
Nominally undoped semi-insulating InP is prepared reproducibly. The electrical properties of a large series of undoped InP samples, before and after annealing under controlled phosphorus pressure, are presented. Spectroscopic investigations show that iron is incorporated during annealing, but native defects have to be taken into consideration in order to explain the electrical data. Based on a survey of intrinsic defects in InP and on PL measurements of crystals with different stoichiometries, a perspective is given for the growth of undoped semi-insulating InP under controlled phosphorus pressure.<>
{"title":"Annealing and bulk crystal growth of undoped InP under controlled P-pressure: a perspective for the preparation of undoped SI InP?","authors":"G. Hirt, D. Hofmann, F. Mosel, N. Schafer, G. Muller","doi":"10.1109/ICIPRM.1991.147285","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147285","url":null,"abstract":"Nominally undoped semi-insulating InP is prepared reproducibly. The electrical properties of a large series of undoped InP samples, before and after annealing under controlled phosphorus pressure, are presented. Spectroscopic investigations show that iron is incorporated during annealing, but native defects have to be taken into consideration in order to explain the electrical data. Based on a survey of intrinsic defects in InP and on PL measurements of crystals with different stoichiometries, a perspective is given for the growth of undoped semi-insulating InP under controlled phosphorus pressure.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"5 1","pages":"16-19"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87773122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147466
S. Pearton, A. Katz, U. Chakrabarti
A hybrid electron cyclotron resonance (ECR)/radiofrequency (RF) plasma etching system used to study the etching characteristics of InP and InGaAs in CH/sub 4/H/sub 2/-based discharges is described. It was found that the materials retain smooth surface morphologies for microwave powers below 150 W. At higher microwave powers the surface becomes rough due to preferential removal of the group V species. The quality of Au Schottky diode contacts on InP degrades for high-bias etching, but the addition of PCl/sub 3/ to the discharge retards this degradation by providing an overpressure of P. The room-temperature photoluminescence intensity of InP is preserved by the PCl/sub 3/ addition. The use of CH/sub 3/Cl in preference to CH/sub 4/ to increase the etch rate of InGaAs was investigated and this appears to have few advantages since the etch rates are comparable to those with CH/sub 4//H/sub 2/. The degree of polymer deposition during CH/sub 4//H/sub 2/Ar etching on the type of mask used (photoresist, W, or SiO/sub 2/) is discussed.<>
{"title":"Effects of PCl/sub 3/ addition on ECR CH/sub 4//H/sub 2//Ar plasma etching of InP and InGaAs","authors":"S. Pearton, A. Katz, U. Chakrabarti","doi":"10.1109/ICIPRM.1991.147466","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147466","url":null,"abstract":"A hybrid electron cyclotron resonance (ECR)/radiofrequency (RF) plasma etching system used to study the etching characteristics of InP and InGaAs in CH/sub 4/H/sub 2/-based discharges is described. It was found that the materials retain smooth surface morphologies for microwave powers below 150 W. At higher microwave powers the surface becomes rough due to preferential removal of the group V species. The quality of Au Schottky diode contacts on InP degrades for high-bias etching, but the addition of PCl/sub 3/ to the discharge retards this degradation by providing an overpressure of P. The room-temperature photoluminescence intensity of InP is preserved by the PCl/sub 3/ addition. The use of CH/sub 3/Cl in preference to CH/sub 4/ to increase the etch rate of InGaAs was investigated and this appears to have few advantages since the etch rates are comparable to those with CH/sub 4//H/sub 2/. The degree of polymer deposition during CH/sub 4//H/sub 2/Ar etching on the type of mask used (photoresist, W, or SiO/sub 2/) is discussed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"21 1","pages":"252-255"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88026518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147400
U. Feiste, R. Kaiser, G. Mekonnen, C. Schramm, D. Trommer, G. Unterborsch
A comprehensive characterization of an optoelectronic integrated circuit (OEIC) receiver that uses an optical waveguide is given. Bias dependent signal and noise measurements show that the gain-bandwidth product increases from 1.4 GHz at zero bias operation to 2.7 GHz at the optimum bias voltages. The receiver input noise is dominated by the JFET channel noise. Using an equivalent circuit model for the receiver, agreement between the calculated and the measured data was found. From the measured input noise, an optical sensitivity of -29 dBm was evaluated at a bit rate of 576 Mb/s (BER=10/sup -9/).<>
{"title":"RF and noise characterization of a monolithically integrated receiver on InP","authors":"U. Feiste, R. Kaiser, G. Mekonnen, C. Schramm, D. Trommer, G. Unterborsch","doi":"10.1109/ICIPRM.1991.147400","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147400","url":null,"abstract":"A comprehensive characterization of an optoelectronic integrated circuit (OEIC) receiver that uses an optical waveguide is given. Bias dependent signal and noise measurements show that the gain-bandwidth product increases from 1.4 GHz at zero bias operation to 2.7 GHz at the optimum bias voltages. The receiver input noise is dominated by the JFET channel noise. Using an equivalent circuit model for the receiver, agreement between the calculated and the measured data was found. From the measured input noise, an optical sensitivity of -29 dBm was evaluated at a bit rate of 576 Mb/s (BER=10/sup -9/).<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"411-414"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78999135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147346
U. Niggebrugge
The advances towards high-quality dry etching techniques for InP-based materials are reviewed, including recent results on process induced damage. Methods of in situ etch depth control are discussed, and examples of devices advantageously fabricated by dry etching techniques are presented.<>
{"title":"Recent advances in dry etching processes for InP-based materials","authors":"U. Niggebrugge","doi":"10.1109/ICIPRM.1991.147346","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147346","url":null,"abstract":"The advances towards high-quality dry etching techniques for InP-based materials are reviewed, including recent results on process induced damage. Methods of in situ etch depth control are discussed, and examples of devices advantageously fabricated by dry etching techniques are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"17 1","pages":"246-251"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88271907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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