Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147309
H. Bach, F. Fidorra
An evaluation of the temperature resolved I-V characteristics in connection with corresponding I-V simulations of homojunction and heterojunction test diodes in the high current regime (>1000 A cm/sup -2/), where the minimization of the additional series resistances for the heterodiode is of crucial importance, is presented. Proper design of layer sequence, composition, and growth provides low series resistance for the heterodiode and high turn-on voltage for the homodiode. A detailed analysis is presented of the intrinsic series resistance of the laser heterodiode, which results from two regions: the transition between the upper p-GaInAs contact and the p-InP cladding layers (also valid for the homojunctions), and the transition between the updoped GaInAsP (1.55 mu m) active and lower n-InP buffer layers. In both isotype junctions the inherent band edge discontinuities for the majority carriers are detrimental at high current densities.<>
在高电流条件下(>1000 A cm/sup -2/)，异质结和异质结测试二极管的相应I-V模拟中，对温度分辨I-V特性进行了评估，其中异质结的附加串联电阻的最小化是至关重要的。适当的层序、组成和生长设计可以为异质二极管提供低串联电阻和高导通电压。详细分析了激光异质二极管的本征串联电阻，该电阻来自两个区域:上层p-GaInAs接触层与p-InP包层之间的过渡(也适用于同质结)，以及上掺杂的GaInAsP (1.55 μ m)有源层与下层n-InP缓冲层之间的过渡。在这两种同型结中，大多数载流子固有的带边缘不连续在高电流密度下是有害的。
{"title":"On the current transport across isotype heterojunctions investigated on InP-based BRS-lasers","authors":"H. Bach, F. Fidorra","doi":"10.1109/ICIPRM.1991.147309","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147309","url":null,"abstract":"An evaluation of the temperature resolved I-V characteristics in connection with corresponding I-V simulations of homojunction and heterojunction test diodes in the high current regime (>1000 A cm/sup -2/), where the minimization of the additional series resistances for the heterodiode is of crucial importance, is presented. Proper design of layer sequence, composition, and growth provides low series resistance for the heterodiode and high turn-on voltage for the homodiode. A detailed analysis is presented of the intrinsic series resistance of the laser heterodiode, which results from two regions: the transition between the upper p-GaInAs contact and the p-InP cladding layers (also valid for the homojunctions), and the transition between the updoped GaInAsP (1.55 mu m) active and lower n-InP buffer layers. In both isotype junctions the inherent band edge discontinuities for the majority carriers are detrimental at high current densities.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"126-129"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90377304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147337
J. Schlafer, E. Meland, R. Lauer, R. Holmstrom, J. Lacourse, C. Su
The intrinsic frequency response and the maximum modulation bandwidths of lasers with extremely large intrinsic resonance frequencies and thus with very high 3 dB modulation bandwidth potential are discussed. It is shown that in the absence of electrical parasitics. the modulation bandwidths approach 50 GHz and that the lasers, characterized by a large differential gain, are capable of achieving very high bandwidths at relatively low operating powers.<>
{"title":"InGaAsP diode lasers with high intrinsic bandwidth","authors":"J. Schlafer, E. Meland, R. Lauer, R. Holmstrom, J. Lacourse, C. Su","doi":"10.1109/ICIPRM.1991.147337","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147337","url":null,"abstract":"The intrinsic frequency response and the maximum modulation bandwidths of lasers with extremely large intrinsic resonance frequencies and thus with very high 3 dB modulation bandwidth potential are discussed. It is shown that in the absence of electrical parasitics. the modulation bandwidths approach 50 GHz and that the lasers, characterized by a large differential gain, are capable of achieving very high bandwidths at relatively low operating powers.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"122 19","pages":"204-207"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91423727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147308
R. Ash, D. Robbins, P. Charles, G. Jones, P. Fell, A. Wood, N. Carr
A laser structure for use at microwave frequencies that has reduced parasitic capacitance and resistance and is suitable for integration with other optoelectronic components is described. The fabrication of two devices is discussed: a 1.3- mu m bulk device with a liquid-phase epitaxy (LPE)-grown active region and an all metalorganic vapor phase epitaxy (MOVPE) 1.55- mu m multiple-quantum-well distributed feedback (DFB) laser. The devices were bonded active side up onto metal carriers for assessment with connections being made using short bond wires to a microstrip line terminated in a 50- Omega load and fed by a shape memory alloy (SMA) launcher. Measurements of light-current characteristics showed threshold currents of 15 mA for 250- mu m-long uncoated lasers and external differential quantum efficiencies up to 25% facet at 25 degrees C for the 1.3- mu m devices. The results of large- and small-signal measurements of the lasers are presented.<>
{"title":"A high speed low capacitance laser structure for integration","authors":"R. Ash, D. Robbins, P. Charles, G. Jones, P. Fell, A. Wood, N. Carr","doi":"10.1109/ICIPRM.1991.147308","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147308","url":null,"abstract":"A laser structure for use at microwave frequencies that has reduced parasitic capacitance and resistance and is suitable for integration with other optoelectronic components is described. The fabrication of two devices is discussed: a 1.3- mu m bulk device with a liquid-phase epitaxy (LPE)-grown active region and an all metalorganic vapor phase epitaxy (MOVPE) 1.55- mu m multiple-quantum-well distributed feedback (DFB) laser. The devices were bonded active side up onto metal carriers for assessment with connections being made using short bond wires to a microstrip line terminated in a 50- Omega load and fed by a shape memory alloy (SMA) launcher. Measurements of light-current characteristics showed threshold currents of 15 mA for 250- mu m-long uncoated lasers and external differential quantum efficiencies up to 25% facet at 25 degrees C for the 1.3- mu m devices. The results of large- and small-signal measurements of the lasers are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"46 1","pages":"122-125"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81043770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147396
C. C. Eugster, T.P.E. Broekaert, J. A. D. Alamo, Clifton G. Fonstad
The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-off (V/sub th/=-0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS/mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations from which the electron channel is confirmed to be the InAs layer.<>
{"title":"An InAlAs/InAs MODFET","authors":"C. C. Eugster, T.P.E. Broekaert, J. A. D. Alamo, Clifton G. Fonstad","doi":"10.1109/ICIPRM.1991.147396","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147396","url":null,"abstract":"The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-off (V/sub th/=-0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS/mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations from which the electron channel is confirmed to be the InAs layer.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"77 1","pages":"385-388"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87437515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147294
A. Ougazzaden, R. Mellet, Y. Gao, E. Rao, A. Mircea
The realization of 1.3- mu m laser devices with active light-emitting layers grown from the alternative phosphorous precursor tertiary butylphosphine (TBP) instead of phosphine is discussed. In addition to better safety, an advantage of TBP is easier achievement of high composition uniformity due to a smaller influence of the growth temperature. The main drawback of TBP is its price, which is much higher than for phosphine.<>
{"title":"Contribution to the growth of InP and InGaAsP optoelectronic device materials by atmospheric- and low-pressure MOVPE using tertiarybutylphosphine","authors":"A. Ougazzaden, R. Mellet, Y. Gao, E. Rao, A. Mircea","doi":"10.1109/ICIPRM.1991.147294","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147294","url":null,"abstract":"The realization of 1.3- mu m laser devices with active light-emitting layers grown from the alternative phosphorous precursor tertiary butylphosphine (TBP) instead of phosphine is discussed. In addition to better safety, an advantage of TBP is easier achievement of high composition uniformity due to a smaller influence of the growth temperature. The main drawback of TBP is its price, which is much higher than for phosphine.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"35 1","pages":"64-67"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90674185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147360
M. Faur, C. Vargas, M. Goradia
The electrochemical current-voltage profiling of p, n, p/sup +/, and n/sup +/ liquid encapsulated Czochralski (LEC) or VGE grown InP substrates. thermally diffused n/sup +/p and p/sup +/n, and epitaxially grown n/sup +/p InP structures using an electrolyte called FAP is described. It found that the FAP electrolyte is inherently superior to previously reported electrolytes (0.5 M HCl and the Pear etch) for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/cm/sup 2/.<>
p, n, p/sup +/和n/sup +/液体封装的chzochralski (LEC)或VGE生长在p衬底的电化学电流-电压谱。本文描述了热扩散的n/sup +/p和p/sup +/n，以及使用一种称为FAP的电解质外延生长的n/sup +/p InP结构。研究发现，在高达0.3 mA/cm/sup /的电流密度下，FAP电解质在执行InP的精确EC-V分析方面，本质上优于先前报道的电解质(0.5 M HCl和Pear蚀刻液)。
{"title":"EC-V profiling of InP","authors":"M. Faur, C. Vargas, M. Goradia","doi":"10.1109/ICIPRM.1991.147360","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147360","url":null,"abstract":"The electrochemical current-voltage profiling of p, n, p/sup +/, and n/sup +/ liquid encapsulated Czochralski (LEC) or VGE grown InP substrates. thermally diffused n/sup +/p and p/sup +/n, and epitaxially grown n/sup +/p InP structures using an electrolyte called FAP is described. It found that the FAP electrolyte is inherently superior to previously reported electrolytes (0.5 M HCl and the Pear etch) for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/cm/sup 2/.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"310-314"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78557675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147449
J. Oshinowo, A. Forchel, D. Grutzmacher, M. Stollenwerk
A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined.<>
{"title":"RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells-the influence of InGaAs cap layers","authors":"J. Oshinowo, A. Forchel, D. Grutzmacher, M. Stollenwerk","doi":"10.1109/ICIPRM.1991.147449","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147449","url":null,"abstract":"A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"179 1","pages":"606-609"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75479008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147461
C. Mansfield, D. Newson, P. Birdsall, J. Quayle
The development of highly uniform diffused InGaAs JFETs for use in vertically integrated optoelectronic integrated circuits (OEICs) is discussed. The devices have been integrated with both PIN diodes and ridge-waveguide lasers. OEIC fabrication and OEIC receiver performance are discussed.<>
{"title":"High performance diffused InGaAs JFETs in OEICs","authors":"C. Mansfield, D. Newson, P. Birdsall, J. Quayle","doi":"10.1109/ICIPRM.1991.147461","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147461","url":null,"abstract":"The development of highly uniform diffused InGaAs JFETs for use in vertically integrated optoelectronic integrated circuits (OEICs) is discussed. The devices have been integrated with both PIN diodes and ridge-waveguide lasers. OEIC fabrication and OEIC receiver performance are discussed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"660-663"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72785627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147339
O. Mikami, Y. Noguchi, H. Yasaka
An approach that broadens the emission spectral width of superluminescent diodes (SLDs) is proposed. The fabrication of 1.3- mu m InGaAsP/InP SLDs incorporating a structure of tandem active layers is described. For this device, the spectral width is broadened over 100 nm, achieving a short coherence length of 9.2 mu m, one-fourth that of conventional 1.3- mu m SLDs.<>
提出了一种提高超发光二极管(SLDs)发射光谱宽度的方法。介绍了采用串联有源层结构的1.3 μ m InGaAsP/InP sld的制备方法。对于该器件，光谱宽度加宽超过100 nm，实现了9.2 μ m的短相干长度，是传统1.3 μ m sld的四分之一。
{"title":"A very wide spectrum superluminescent diode at 1.3 mu m","authors":"O. Mikami, Y. Noguchi, H. Yasaka","doi":"10.1109/ICIPRM.1991.147339","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147339","url":null,"abstract":"An approach that broadens the emission spectral width of superluminescent diodes (SLDs) is proposed. The fabrication of 1.3- mu m InGaAsP/InP SLDs incorporating a structure of tandem active layers is described. For this device, the spectral width is broadened over 100 nm, achieving a short coherence length of 9.2 mu m, one-fourth that of conventional 1.3- mu m SLDs.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"212-215"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73658511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147350
I. Pollentier, P. Demeester, P. van Daele, D. Rondi, G. Glastre, A. Enard, R. Blondeau
The integration of GaAs MESFET circuits with InP components using epitaxial lift-off (ELO) technology is discussed. Specific ELO problems (film-substrate isolation, alignment) and solutions as well as the various ways to integrate MESFETs on InP are described. The fabrication of a long wavelength OEIC, in which a GaAs ELO MESFET is integrated with an InP 2*2 buried waveguide optical switch (fully interconnected oil chip), is presented.<>
讨论了利用外延提升(ELO)技术将GaAs MESFET电路与InP元件集成。描述了特定的ELO问题(薄膜-衬底隔离、对准)和解决方案，以及在InP上集成mesfet的各种方法。提出了一种将GaAs ELO MESFET与inp2 *2埋地波导光开关(全互连油芯片)集成在一起的长波OEIC的制造方法。
{"title":"Fabrication of long wavelength QEICs using GaAs on InP epitaxial lift-off technology","authors":"I. Pollentier, P. Demeester, P. van Daele, D. Rondi, G. Glastre, A. Enard, R. Blondeau","doi":"10.1109/ICIPRM.1991.147350","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147350","url":null,"abstract":"The integration of GaAs MESFET circuits with InP components using epitaxial lift-off (ELO) technology is discussed. Specific ELO problems (film-substrate isolation, alignment) and solutions as well as the various ways to integrate MESFETs on InP are described. The fabrication of a long wavelength OEIC, in which a GaAs ELO MESFET is integrated with an InP 2*2 buried waveguide optical switch (fully interconnected oil chip), is presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"13 1","pages":"268-271"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74018335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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