Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939956
J. Liu, J. Luo, J. Li, C. Chen, G. L. Wang, T. Chen, T. T. Li, J. Zhong, D. Wu, P. Xu, C. Zhao
The formation of N-type Ge shallow junction is investigated in this work. By combining carbon co-implantation and microwave annealing (MWA) method, the junction depth of 34 nm measured by secondary ion mass spectroscopy (SIMS) as well as sheet resistance of 467 ohm/sq measured by Hall is achieved. Results show that the opitimal carbon implantation energy is 8 keV in that distributed carbon ions at such an energy can effectively trap vacancies and phosphorous into immobile clusters. The recrystallization of amorphous layer after MWA annealing is also studied by both ellipsometry and transmission electron microscopy (TEM).
{"title":"Co-implantation with microwave annealing for phosphorous shallow-junction formation in Germanium","authors":"J. Liu, J. Luo, J. Li, C. Chen, G. L. Wang, T. Chen, T. T. Li, J. Zhong, D. Wu, P. Xu, C. Zhao","doi":"10.1109/IIT.2014.6939956","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939956","url":null,"abstract":"The formation of N-type Ge shallow junction is investigated in this work. By combining carbon co-implantation and microwave annealing (MWA) method, the junction depth of 34 nm measured by secondary ion mass spectroscopy (SIMS) as well as sheet resistance of 467 ohm/sq measured by Hall is achieved. Results show that the opitimal carbon implantation energy is 8 keV in that distributed carbon ions at such an energy can effectively trap vacancies and phosphorous into immobile clusters. The recrystallization of amorphous layer after MWA annealing is also studied by both ellipsometry and transmission electron microscopy (TEM).","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"4 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76010068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939968
V. Haublein, E. Birnbaum, H. Ryssel, L. Frey, W. Grimm
Polypropylene (PP) films for thin film capacitors were implanted with N, Ar, and Ne, respectively, in order to reduce the water vapor permeability. It is shown that the reduction of the water vapor permeability strongly depends on implantation dose and energy. For doses below 1015 cm-2, the water vapor permeability was not affected, while doses above 1015 cm-2 lead to a significant reduction. For all of the mentioned elements, 10 keV implants lead to a significantly greater reduction than 20 keV implants. The largest reduction of about 96 % was achieved by Ar implantation at 10 keV and a dose of 1015 cm-2. Besides the water vapor permeability analysis, surface analysis, tensile tests, and electric strength measurements of implanted and nonimplanted films were performed and are discussed in the paper.
{"title":"Modification of polypropylene films for thin film capacitors by ion implantation","authors":"V. Haublein, E. Birnbaum, H. Ryssel, L. Frey, W. Grimm","doi":"10.1109/IIT.2014.6939968","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939968","url":null,"abstract":"Polypropylene (PP) films for thin film capacitors were implanted with N, Ar, and Ne, respectively, in order to reduce the water vapor permeability. It is shown that the reduction of the water vapor permeability strongly depends on implantation dose and energy. For doses below 1015 cm-2, the water vapor permeability was not affected, while doses above 1015 cm-2 lead to a significant reduction. For all of the mentioned elements, 10 keV implants lead to a significantly greater reduction than 20 keV implants. The largest reduction of about 96 % was achieved by Ar implantation at 10 keV and a dose of 1015 cm-2. Besides the water vapor permeability analysis, surface analysis, tensile tests, and electric strength measurements of implanted and nonimplanted films were performed and are discussed in the paper.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"43 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78696519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940011
K.-A. Bui-T Meura, F. Torregrosa, A. Robbes, Seo-Youn Choi, A. Merkulov, M. Moret, J. Duchaine, N. Horiguchi, Letian Li, C. Mitterbauer
FinFETs have emerged as a novel transistor architecture for 22nm technology and beyond thanks to good electrostatic control and scalability [1,2]. However, the change from planar to FinFET device architectures challenges the junction formation and the characterization. Fin sidewall doping and doping damages control are critical in scaled FinFETs [3,4,5] but both are difficult to achieve with conventional beamline ion implantation. As an alternative technique, Plasma Immersion Ion implantation (PIII) has shown promising results [6,7]. New characterization techniques such as SIMS through fins, SSRM, atom probe tomography, are needed [8,9,10] to complement standard sheet resistance and SIMS measurements to evaluate sidewall dopants. In this paper we present Low energy Electron X-Ray Emission Spectrometry (LEXES) and SIMS through fins for the characterization of arsenic implants in FinFETs by PIII. STEM-EDX has been used to double check SIMS average data at the fin's scale. The complementarity of these techniques will be presented and excellent conformal fin doping capability of the PULSION® tool is demonstrated.
{"title":"Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX","authors":"K.-A. Bui-T Meura, F. Torregrosa, A. Robbes, Seo-Youn Choi, A. Merkulov, M. Moret, J. Duchaine, N. Horiguchi, Letian Li, C. Mitterbauer","doi":"10.1109/IIT.2014.6940011","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940011","url":null,"abstract":"FinFETs have emerged as a novel transistor architecture for 22nm technology and beyond thanks to good electrostatic control and scalability [1,2]. However, the change from planar to FinFET device architectures challenges the junction formation and the characterization. Fin sidewall doping and doping damages control are critical in scaled FinFETs [3,4,5] but both are difficult to achieve with conventional beamline ion implantation. As an alternative technique, Plasma Immersion Ion implantation (PIII) has shown promising results [6,7]. New characterization techniques such as SIMS through fins, SSRM, atom probe tomography, are needed [8,9,10] to complement standard sheet resistance and SIMS measurements to evaluate sidewall dopants. In this paper we present Low energy Electron X-Ray Emission Spectrometry (LEXES) and SIMS through fins for the characterization of arsenic implants in FinFETs by PIII. STEM-EDX has been used to double check SIMS average data at the fin's scale. The complementarity of these techniques will be presented and excellent conformal fin doping capability of the PULSION® tool is demonstrated.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73076424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939972
F. P. Luce, S. Reboh, E. Vilain, F. Madeira, J. Barnes, N. Rochat, T. Salvetat, A. Tauzin, F. Milési, F. Mazen, C. Deguet
The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of VInHx complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.
{"title":"Influence of implantation temperature on the formation of hydrogen-related defects in InP","authors":"F. P. Luce, S. Reboh, E. Vilain, F. Madeira, J. Barnes, N. Rochat, T. Salvetat, A. Tauzin, F. Milési, F. Mazen, C. Deguet","doi":"10.1109/IIT.2014.6939972","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939972","url":null,"abstract":"The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of VInHx complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"99 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74443222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939954
S. Sharma, W. Aderhold, K. Raman Sharma, A. Mayur
Scaling of semiconductor devices over past decades has been made possible by continuous innovations in materials engineering as well as device integration and geometries. Thermal processing has been an enabler for manufacturing advanced devices, both as a unit process and in concert with other key technologies like ion implantation, epitaxy, and film deposition. This paper reviews the evolution of annealing technology with a special consideration to thermodynamics, kinetics and integration thermal budgets. Equipment and process innovations to meet ever-changing material and device fabrication requirements are presented.
{"title":"Thermal processing for continued scaling of semiconductor devices","authors":"S. Sharma, W. Aderhold, K. Raman Sharma, A. Mayur","doi":"10.1109/IIT.2014.6939954","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939954","url":null,"abstract":"Scaling of semiconductor devices over past decades has been made possible by continuous innovations in materials engineering as well as device integration and geometries. Thermal processing has been an enabler for manufacturing advanced devices, both as a unit process and in concert with other key technologies like ion implantation, epitaxy, and film deposition. This paper reviews the evolution of annealing technology with a special consideration to thermodynamics, kinetics and integration thermal budgets. Equipment and process innovations to meet ever-changing material and device fabrication requirements are presented.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"1 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90696872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940014
G. Margutti, Diego Martirani Paolillo, Marco De Biase, L. Latessa, M. Barozzi, E. Demenev, L. Rubin, C. Spaggiari
In the last years a lot of effort has been directed in order to reduce ion implantation damage, which can be detrimental for silicon device performances. Implantation's dose rate and temperature were found to be two important factors to modulate residual damage left in silicon after anneal. In this work high dose rate, low temperature, high dose arsenic and boron implantations are compared to the corresponding low dose rate, room temperature processes in terms of silicon lattice defectiveness and dopant distribution, before and after anneal is performed. The considered implant processes are the one typically used to form a source/drain region in a CMOS process flow in the submicron technology node. A spike anneal process was applied to activate the dopant. Low temperature, high dose rate implantations have found to be effective in reducing silicon extended defects with a negligible effect on the profile of the activated dopant. Experimental set up, results and possible explanation will be reported and discussed in the paper.
{"title":"Silicon defects characterization for low temperature ion implantation and spike anneal processes","authors":"G. Margutti, Diego Martirani Paolillo, Marco De Biase, L. Latessa, M. Barozzi, E. Demenev, L. Rubin, C. Spaggiari","doi":"10.1109/IIT.2014.6940014","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940014","url":null,"abstract":"In the last years a lot of effort has been directed in order to reduce ion implantation damage, which can be detrimental for silicon device performances. Implantation's dose rate and temperature were found to be two important factors to modulate residual damage left in silicon after anneal. In this work high dose rate, low temperature, high dose arsenic and boron implantations are compared to the corresponding low dose rate, room temperature processes in terms of silicon lattice defectiveness and dopant distribution, before and after anneal is performed. The considered implant processes are the one typically used to form a source/drain region in a CMOS process flow in the submicron technology node. A spike anneal process was applied to activate the dopant. Low temperature, high dose rate implantations have found to be effective in reducing silicon extended defects with a negligible effect on the profile of the activated dopant. Experimental set up, results and possible explanation will be reported and discussed in the paper.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"85 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73555470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939966
H. Levinson, T. Brunner
Among the challenges with which lithographers are currently grappling, the issues of line-edge roughness (LER) and non-linear overlay errors intersect the concerns of ion implantation and thermal process engineers. LER, and the associated metric for contact holes, local critical dimension uniformity (LCDU), must be small to meet the requirements of advanced nodes. Photon shot-noise-induced LER and LCDU diminution, which can benefit from high resist exposure doses, must be balanced with exposure tool throughput requirements for meeting cost targets for Moore's Law. Because very small improvements in LER and LCDU can require substantial increases in resist exposure doses, post-lithographic techniques for reducing LER and LCDU can have sizable salutary impact on overall wafer costs. The impact of LER on circuit performance depends on the spatial frequencies comprising the LER, and the criticality of particular ranges of spatial frequencies may shift as a consequence of transitions to new types of devices. LER can be reduced post-lithographically by using charged particle beams. Non-linear wafer distortions, which can result from thermal processes and the etching of high-stress films, are problematic for overlay control. Correction of non-linear overlay errors requires the use of a large number of alignment sites and overlay measurements, again resulting in a trade-off between process control and wafer cost. The impact of these distortions on overlay can be predicted quantitatively by measurements of out-of-plane wafer warp. Such measurements can be used to develop processes with intrinsically low distortion and for maintaining process control in manufacturing.
{"title":"Ion beams, thermal processes and lithographic challenges","authors":"H. Levinson, T. Brunner","doi":"10.1109/IIT.2014.6939966","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939966","url":null,"abstract":"Among the challenges with which lithographers are currently grappling, the issues of line-edge roughness (LER) and non-linear overlay errors intersect the concerns of ion implantation and thermal process engineers. LER, and the associated metric for contact holes, local critical dimension uniformity (LCDU), must be small to meet the requirements of advanced nodes. Photon shot-noise-induced LER and LCDU diminution, which can benefit from high resist exposure doses, must be balanced with exposure tool throughput requirements for meeting cost targets for Moore's Law. Because very small improvements in LER and LCDU can require substantial increases in resist exposure doses, post-lithographic techniques for reducing LER and LCDU can have sizable salutary impact on overall wafer costs. The impact of LER on circuit performance depends on the spatial frequencies comprising the LER, and the criticality of particular ranges of spatial frequencies may shift as a consequence of transitions to new types of devices. LER can be reduced post-lithographically by using charged particle beams. Non-linear wafer distortions, which can result from thermal processes and the etching of high-stress films, are problematic for overlay control. Correction of non-linear overlay errors requires the use of a large number of alignment sites and overlay measurements, again resulting in a trade-off between process control and wafer cost. The impact of these distortions on overlay can be predicted quantitatively by measurements of out-of-plane wafer warp. Such measurements can be used to develop processes with intrinsically low distortion and for maintaining process control in manufacturing.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"40 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77689770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940053
S. Simingalam, P. Wijewarnasuriya, M. V. Rao
Arsenic ion-implantation is a standard device processing step to create selective area p+-HgCdTe (MCT) regions in planar devices. One of the issues associated with the ion-implantation process is the significant structural damage to the MCT epilayer. These structural defects limit the performance of diodes via significant tunneling reverse-bias dark currents. After ion-implantation, a high temperature annealing step is required to activate the implant (arsenic) by moving it into the tellurium sublattice and also to heal the lattice damage caused by the implantation process. In this study, we have used thermal cycle annealing (TCA) to decrease ion implantation damage. In TCA, we rapidly heat and cool an MCT sample, which provides an additional degree of freedom that is not obtainable with conventional annealing. We have successfully performed TCA for dislocation defect reduction in in-situ indium-doped MCT with limited inter-diffusion between the absorber layer and cadmium rich cap layer. We also investigated the application of TCA to arsenic ion-implanted MCT. Defects were studied using scanning electron microscopy (SEM) after subjecting the samples to Benson etching to decorate the defects. Mercury-deficient and tellurium-saturated overpressure anneals were performed in an attempt to increase mercury vacancy concentrations and, thereby, increase dislocation climb. Such anneals significantly increased the etch pit density (EPD) in both ion-implanted and un-implanted MCT. By cycle annealing, we have also shown EPD reduction in arsenic ion-implanted, long bar shaped MCT mesas formed on CdTe/Si substrates.
{"title":"Thermal cycle annealing and its application to arsenic-ion implanted HgCdTe","authors":"S. Simingalam, P. Wijewarnasuriya, M. V. Rao","doi":"10.1109/IIT.2014.6940053","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940053","url":null,"abstract":"Arsenic ion-implantation is a standard device processing step to create selective area p+-HgCdTe (MCT) regions in planar devices. One of the issues associated with the ion-implantation process is the significant structural damage to the MCT epilayer. These structural defects limit the performance of diodes via significant tunneling reverse-bias dark currents. After ion-implantation, a high temperature annealing step is required to activate the implant (arsenic) by moving it into the tellurium sublattice and also to heal the lattice damage caused by the implantation process. In this study, we have used thermal cycle annealing (TCA) to decrease ion implantation damage. In TCA, we rapidly heat and cool an MCT sample, which provides an additional degree of freedom that is not obtainable with conventional annealing. We have successfully performed TCA for dislocation defect reduction in in-situ indium-doped MCT with limited inter-diffusion between the absorber layer and cadmium rich cap layer. We also investigated the application of TCA to arsenic ion-implanted MCT. Defects were studied using scanning electron microscopy (SEM) after subjecting the samples to Benson etching to decorate the defects. Mercury-deficient and tellurium-saturated overpressure anneals were performed in an attempt to increase mercury vacancy concentrations and, thereby, increase dislocation climb. Such anneals significantly increased the etch pit density (EPD) in both ion-implanted and un-implanted MCT. By cycle annealing, we have also shown EPD reduction in arsenic ion-implanted, long bar shaped MCT mesas formed on CdTe/Si substrates.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89378761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940051
J. Moon, W. Bahng, I. Kang, Sang Cheol Kim, N. Kim
The charge build up in gate oxide and the field effective mobility of 4H-SiC Lateral Double Implanted Metal-Oxide-Semiconductor Field-Effect Transistors (DIMOSFETs) have been evaluated for its dependence on the Post-Oxidation Annealing (POA) time in a nitric oxide gas ambient. NO nitrided oxide for 3 hours significantly reduces the interface trap density near the conduction band and effective oxide charge density, resulting in a decrease of oxide trapped charge in gate oxide during Fowler-Nordheim injection as compared with that of NO POA for 1-2 hours. A high field effect mobility of 11.8 cm2/Vs was successfully achieved in Lateral DIMOSFETs with NO POA for 3 hours. The electrical properties of metal-oxide semiconductor devices fabricated using these oxides are discussed in terms of the oxide's chemical composition.
{"title":"Investigation of charge build-up in NO nitrided gate oxide on 4H-SiC during Fowler-Nordheim injection and fabrication of 4H-SiC Lateral Double-Implanted MOSFETs","authors":"J. Moon, W. Bahng, I. Kang, Sang Cheol Kim, N. Kim","doi":"10.1109/IIT.2014.6940051","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940051","url":null,"abstract":"The charge build up in gate oxide and the field effective mobility of 4H-SiC Lateral Double Implanted Metal-Oxide-Semiconductor Field-Effect Transistors (DIMOSFETs) have been evaluated for its dependence on the Post-Oxidation Annealing (POA) time in a nitric oxide gas ambient. NO nitrided oxide for 3 hours significantly reduces the interface trap density near the conduction band and effective oxide charge density, resulting in a decrease of oxide trapped charge in gate oxide during Fowler-Nordheim injection as compared with that of NO POA for 1-2 hours. A high field effect mobility of 11.8 cm2/Vs was successfully achieved in Lateral DIMOSFETs with NO POA for 3 hours. The electrical properties of metal-oxide semiconductor devices fabricated using these oxides are discussed in terms of the oxide's chemical composition.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"54 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83158575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939986
Ying Tang, Jim Dunn, S. Bishop, Danny Elzer, J. Sweeney, T. Morel, S. Courault, G. Horellou, Marc Biossat
Carbon implant has become one of the major co-implant steps in the fabrication of advanced semiconductor devices due to its proven effectiveness in controlling and reducing Transient Enhanced Diffusion (TED) in ultra-shallow junction formation. Carbon dioxide (CO2) is still widely used as the feed gas for carbon implantation. However, it is well known that the high concentration of oxygen from CO2 causes many problems, including oxidation of the implant arc chamber components, which leads to rapid performance degradation of the source. Phosphine (PH3) is often used as a dilution gas to minimize the oxidation effect from CO2. However, its use usually results in a reduction of the C+ beam current, thereby negatively impacting the tool's productivity. In this paper, carbon monoxide (CO) is presented as an alternative carbon doping gas replacing CO2 or CO2 with PH3 dilution (referred to as CO2/PH3 throughout this paper). CO is shown to exhibit distinct performance improvements compared to CO2/PH3 on the Applied Materials VIISta HCS high current implanter. Significant improvement in C+ beam current and source life with CO gas is noted.
{"title":"Carbon implantation performance improvement by using carbon monoxide (CO) gas on applied materials VIISta HCS implanter","authors":"Ying Tang, Jim Dunn, S. Bishop, Danny Elzer, J. Sweeney, T. Morel, S. Courault, G. Horellou, Marc Biossat","doi":"10.1109/IIT.2014.6939986","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939986","url":null,"abstract":"Carbon implant has become one of the major co-implant steps in the fabrication of advanced semiconductor devices due to its proven effectiveness in controlling and reducing Transient Enhanced Diffusion (TED) in ultra-shallow junction formation. Carbon dioxide (CO<sub>2</sub>) is still widely used as the feed gas for carbon implantation. However, it is well known that the high concentration of oxygen from CO<sub>2</sub> causes many problems, including oxidation of the implant arc chamber components, which leads to rapid performance degradation of the source. Phosphine (PH<sub>3</sub>) is often used as a dilution gas to minimize the oxidation effect from CO<sub>2</sub>. However, its use usually results in a reduction of the C<sup>+</sup> beam current, thereby negatively impacting the tool's productivity. In this paper, carbon monoxide (CO) is presented as an alternative carbon doping gas replacing CO<sub>2</sub> or CO<sub>2</sub> with PH<sub>3</sub> dilution (referred to as CO<sub>2</sub>/PH<sub>3</sub> throughout this paper). CO is shown to exhibit distinct performance improvements compared to CO<sub>2</sub>/PH<sub>3</sub> on the Applied Materials VIISta HCS high current implanter. Significant improvement in C<sup>+</sup> beam current and source life with CO gas is noted.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"16 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83396495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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