Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940004
A. Burenkov, J. Lorenz, Y. Spiegel, F. Torregrosa
Plasma immersion ion implantation from AsH3 plasma into (100) crystalline silicon was performed using the PULSION tool of Ion Beam Services. Ultra-shallow arsenic doping profiles with maximum concentrations in excess of 1×1022 cm-3 and penetration depths below 10 nm at a concentration of 1×1018 cm-3 were obtained. Two simulation models were applied to describe the observed arsenic profiles: the one developed by the authors earlier for BF3 plasma and a new one that accounts for the specifics of AsH3 plasma.
{"title":"Simulation of AsH3 plasma immersion ion implantation into silicon","authors":"A. Burenkov, J. Lorenz, Y. Spiegel, F. Torregrosa","doi":"10.1109/IIT.2014.6940004","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940004","url":null,"abstract":"Plasma immersion ion implantation from AsH<sub>3</sub> plasma into (100) crystalline silicon was performed using the PULSION tool of Ion Beam Services. Ultra-shallow arsenic doping profiles with maximum concentrations in excess of 1×10<sup>22</sup> cm<sup>-3</sup> and penetration depths below 10 nm at a concentration of 1×10<sup>18</sup> cm<sup>-3</sup> were obtained. Two simulation models were applied to describe the observed arsenic profiles: the one developed by the authors earlier for BF<sub>3</sub> plasma and a new one that accounts for the specifics of AsH<sub>3</sub> plasma.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83104026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939956
J. Liu, J. Luo, J. Li, C. Chen, G. L. Wang, T. Chen, T. T. Li, J. Zhong, D. Wu, P. Xu, C. Zhao
The formation of N-type Ge shallow junction is investigated in this work. By combining carbon co-implantation and microwave annealing (MWA) method, the junction depth of 34 nm measured by secondary ion mass spectroscopy (SIMS) as well as sheet resistance of 467 ohm/sq measured by Hall is achieved. Results show that the opitimal carbon implantation energy is 8 keV in that distributed carbon ions at such an energy can effectively trap vacancies and phosphorous into immobile clusters. The recrystallization of amorphous layer after MWA annealing is also studied by both ellipsometry and transmission electron microscopy (TEM).
{"title":"Co-implantation with microwave annealing for phosphorous shallow-junction formation in Germanium","authors":"J. Liu, J. Luo, J. Li, C. Chen, G. L. Wang, T. Chen, T. T. Li, J. Zhong, D. Wu, P. Xu, C. Zhao","doi":"10.1109/IIT.2014.6939956","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939956","url":null,"abstract":"The formation of N-type Ge shallow junction is investigated in this work. By combining carbon co-implantation and microwave annealing (MWA) method, the junction depth of 34 nm measured by secondary ion mass spectroscopy (SIMS) as well as sheet resistance of 467 ohm/sq measured by Hall is achieved. Results show that the opitimal carbon implantation energy is 8 keV in that distributed carbon ions at such an energy can effectively trap vacancies and phosphorous into immobile clusters. The recrystallization of amorphous layer after MWA annealing is also studied by both ellipsometry and transmission electron microscopy (TEM).","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"4 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76010068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940022
J. Deluca, S. Satoh, H. Chen, T. Fox, S. Kondratenko, R. Reece
Many IC and CIS manufacturers still rely heavily on batch high energy ion implanters such as the Axcelis HE3 and Paradigm XE systems. Angle control continues to become increasingly important with the scaling of devices and the increasing use of channeled implants to reduce the number of implant steps needed to produce a box-like dopant profile. The use of channeled implants limits the use of batch ion implanters for these applications due to the cone angle effect. The introduction of serial high energy ion implanters to replace the batch implanters has exposed subtle differences in damage characteristics related to the differences in tool architecture. Investigation into second order differences in the damage characteristics of the single wafer and batch implanters have resulted in the development of a new system for modifying the electrostatic scanning of the ion beam on the Purion XE with implications for improvement in damage reduction, low dose stability and utilization of the system's mechanical throughput limit.
{"title":"Damage engineering on Purion XE™ high energy ion implanter","authors":"J. Deluca, S. Satoh, H. Chen, T. Fox, S. Kondratenko, R. Reece","doi":"10.1109/IIT.2014.6940022","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940022","url":null,"abstract":"Many IC and CIS manufacturers still rely heavily on batch high energy ion implanters such as the Axcelis HE3 and Paradigm XE systems. Angle control continues to become increasingly important with the scaling of devices and the increasing use of channeled implants to reduce the number of implant steps needed to produce a box-like dopant profile. The use of channeled implants limits the use of batch ion implanters for these applications due to the cone angle effect. The introduction of serial high energy ion implanters to replace the batch implanters has exposed subtle differences in damage characteristics related to the differences in tool architecture. Investigation into second order differences in the damage characteristics of the single wafer and batch implanters have resulted in the development of a new system for modifying the electrostatic scanning of the ion beam on the Purion XE with implications for improvement in damage reduction, low dose stability and utilization of the system's mechanical throughput limit.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76460963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940049
J. Liao, Jung-Yi Guo, Yu-Min Lin, J. Hsieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Continuous technology scaling on NAND FLASH results in serious FG poly depletion issue due to Phosphorous out-gassing and degrades the cell reliability. Phosphorous implantation (P-IMP) into in-situ dope poly can improve poly depletion issue, but the FG bending and FG height loss were observed. In this study, we have successfully explored the methods to minimize FG bending and FG height loss issue by adding plasma oxide (PO) as screen oxide and/or changing the rotation times and temperature control of ion implantation. Finally, P-IMP on FG was validated at 36nm NAND FLASH device and shows significantly improvement on FG depletion and cell reliability.
{"title":"Investigation of floating gate depletion effect on NAND FLASH reliability","authors":"J. Liao, Jung-Yi Guo, Yu-Min Lin, J. Hsieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu","doi":"10.1109/IIT.2014.6940049","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940049","url":null,"abstract":"Continuous technology scaling on NAND FLASH results in serious FG poly depletion issue due to Phosphorous out-gassing and degrades the cell reliability. Phosphorous implantation (P-IMP) into in-situ dope poly can improve poly depletion issue, but the FG bending and FG height loss were observed. In this study, we have successfully explored the methods to minimize FG bending and FG height loss issue by adding plasma oxide (PO) as screen oxide and/or changing the rotation times and temperature control of ion implantation. Finally, P-IMP on FG was validated at 36nm NAND FLASH device and shows significantly improvement on FG depletion and cell reliability.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75625906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939972
F. P. Luce, S. Reboh, E. Vilain, F. Madeira, J. Barnes, N. Rochat, T. Salvetat, A. Tauzin, F. Milési, F. Mazen, C. Deguet
The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of VInHx complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.
{"title":"Influence of implantation temperature on the formation of hydrogen-related defects in InP","authors":"F. P. Luce, S. Reboh, E. Vilain, F. Madeira, J. Barnes, N. Rochat, T. Salvetat, A. Tauzin, F. Milési, F. Mazen, C. Deguet","doi":"10.1109/IIT.2014.6939972","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939972","url":null,"abstract":"The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of VInHx complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"99 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74443222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939968
V. Haublein, E. Birnbaum, H. Ryssel, L. Frey, W. Grimm
Polypropylene (PP) films for thin film capacitors were implanted with N, Ar, and Ne, respectively, in order to reduce the water vapor permeability. It is shown that the reduction of the water vapor permeability strongly depends on implantation dose and energy. For doses below 1015 cm-2, the water vapor permeability was not affected, while doses above 1015 cm-2 lead to a significant reduction. For all of the mentioned elements, 10 keV implants lead to a significantly greater reduction than 20 keV implants. The largest reduction of about 96 % was achieved by Ar implantation at 10 keV and a dose of 1015 cm-2. Besides the water vapor permeability analysis, surface analysis, tensile tests, and electric strength measurements of implanted and nonimplanted films were performed and are discussed in the paper.
{"title":"Modification of polypropylene films for thin film capacitors by ion implantation","authors":"V. Haublein, E. Birnbaum, H. Ryssel, L. Frey, W. Grimm","doi":"10.1109/IIT.2014.6939968","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939968","url":null,"abstract":"Polypropylene (PP) films for thin film capacitors were implanted with N, Ar, and Ne, respectively, in order to reduce the water vapor permeability. It is shown that the reduction of the water vapor permeability strongly depends on implantation dose and energy. For doses below 1015 cm-2, the water vapor permeability was not affected, while doses above 1015 cm-2 lead to a significant reduction. For all of the mentioned elements, 10 keV implants lead to a significantly greater reduction than 20 keV implants. The largest reduction of about 96 % was achieved by Ar implantation at 10 keV and a dose of 1015 cm-2. Besides the water vapor permeability analysis, surface analysis, tensile tests, and electric strength measurements of implanted and nonimplanted films were performed and are discussed in the paper.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"43 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78696519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939980
G. Takaoka, H. Ryuto, M. Takeuchi, Ryou Tsujinaka
Oxygen cluster ion beams and/or monomer ion beams were used to investigate the sputtering and oxidation of solid surfaces such as silicon (Si) and poly-lactic acid (PLA) surfaces. For the oxygen cluster ion irradiation, the sputtered depth increased with increase of the acceleration voltage, and the sputtering yield was much larger than the value for oxygen monomer ion irradiation. Furthermore, for the oxidation process of Si and PLA surfaces, the simultaneous use of oxygen ion beams was more effective than either the cluster ion irradiation or the monomer ion irradiation.
{"title":"Sputtering and chemical modification of solid surfaces using oxygen ion beams","authors":"G. Takaoka, H. Ryuto, M. Takeuchi, Ryou Tsujinaka","doi":"10.1109/IIT.2014.6939980","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939980","url":null,"abstract":"Oxygen cluster ion beams and/or monomer ion beams were used to investigate the sputtering and oxidation of solid surfaces such as silicon (Si) and poly-lactic acid (PLA) surfaces. For the oxygen cluster ion irradiation, the sputtered depth increased with increase of the acceleration voltage, and the sputtering yield was much larger than the value for oxygen monomer ion irradiation. Furthermore, for the oxidation process of Si and PLA surfaces, the simultaneous use of oxygen ion beams was more effective than either the cluster ion irradiation or the monomer ion irradiation.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"24 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82208973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940059
M. Jelinek, W. Schustereder, J. Laven, H. Schulze, S. Kirnstoetter, M. Rommel, L. Frey
Hydrogen implantation has become an important application in the fabrication of power semiconductor devices. With the product requirement of a well-defined implantation profile, adequate control of the incident beam angle is necessary in order to avoid channeling effects. With respect to the different scan systems of commercial implanters and the crystal alignment of the bulk material the implant tilt and twist angles have to be adapted. We used commercially available <;100>-oriented silicon wafers to examine planar channeling along a {110}-plane for proton energies in the range of 0.5-2.5 MeV. The critical angle as a function of proton energy is determined from photothermal response measurements (TWIN).
{"title":"MeV-proton channeling in crystalline silicon","authors":"M. Jelinek, W. Schustereder, J. Laven, H. Schulze, S. Kirnstoetter, M. Rommel, L. Frey","doi":"10.1109/IIT.2014.6940059","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940059","url":null,"abstract":"Hydrogen implantation has become an important application in the fabrication of power semiconductor devices. With the product requirement of a well-defined implantation profile, adequate control of the incident beam angle is necessary in order to avoid channeling effects. With respect to the different scan systems of commercial implanters and the crystal alignment of the bulk material the implant tilt and twist angles have to be adapted. We used commercially available <;100>-oriented silicon wafers to examine planar channeling along a {110}-plane for proton energies in the range of 0.5-2.5 MeV. The critical angle as a function of proton energy is determined from photothermal response measurements (TWIN).","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"27 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83592847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940020
Y. Wang, Shaoyin Chen, Xiaoru Wang, M. Shen
Evolution of CMOS technology has created new opportunities for millisecond annealing beyond the traditional dopant activation and junction formation. Strain enhancement, gate stack property modifications, silicide formation, and contact interface engineering are a few examples. In this paper, we review various applications of millisecond annealing for advanced logic device fabrications. Extendibility to new materials, opportunities and challenges for DRAM applications are also discussed.
{"title":"Millisecond annealing for advanced device fabrications","authors":"Y. Wang, Shaoyin Chen, Xiaoru Wang, M. Shen","doi":"10.1109/IIT.2014.6940020","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940020","url":null,"abstract":"Evolution of CMOS technology has created new opportunities for millisecond annealing beyond the traditional dopant activation and junction formation. Strain enhancement, gate stack property modifications, silicide formation, and contact interface engineering are a few examples. In this paper, we review various applications of millisecond annealing for advanced logic device fabrications. Extendibility to new materials, opportunities and challenges for DRAM applications are also discussed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"80 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84097349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940006
Dawei Xu, Xinhong Cheng, Zhong Jian, Linyan Shen, C. Xia, D. Cao, Li Zheng, Yu Yuehui
A trench gate SOI LDMOS with an oxide trench in the drift region and a trench source plate (TG-LDMOS) is proposed to obtain a high breakdown voltage (BV) and low specific on-resistance (Rsp) simultaneously. The oxide trench extends the drift region in the vertical direction and reshapes the electric field, resulting in reduced cell pitch and Rsp. The trench source plate extends to the buried oxide layer (BOX) further enhances the RESURF effect and also works as a dielectric isolation trench. BV of 111V and Rsp of 0.87mΩ·cm2 are obtained for the TG-LDMOS with 3μm cell pitch. Compared with conventional LDMOS (C-LDMOS), Rsp of the TG-LDMOS decreases by 63.8%, the transconductance(gm) increases by 8.3% and the switching delay decreases by 32% at the same BV. Furthermore, the figure-of-merit (FOM=BV2/Rsp) of the TG-LDMOS equals to 14.6MW/cm2, exhibiting 172.7% improvement than that of C-LDMOS.
{"title":"New Trench gate LDMOS for low power applications","authors":"Dawei Xu, Xinhong Cheng, Zhong Jian, Linyan Shen, C. Xia, D. Cao, Li Zheng, Yu Yuehui","doi":"10.1109/IIT.2014.6940006","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940006","url":null,"abstract":"A trench gate SOI LDMOS with an oxide trench in the drift region and a trench source plate (TG-LDMOS) is proposed to obtain a high breakdown voltage (BV) and low specific on-resistance (R<sub>sp</sub>) simultaneously. The oxide trench extends the drift region in the vertical direction and reshapes the electric field, resulting in reduced cell pitch and R<sub>sp</sub>. The trench source plate extends to the buried oxide layer (BOX) further enhances the RESURF effect and also works as a dielectric isolation trench. BV of 111V and R<sub>sp</sub> of 0.87mΩ·cm<sup>2</sup> are obtained for the TG-LDMOS with 3μm cell pitch. Compared with conventional LDMOS (C-LDMOS), R<sub>sp</sub> of the TG-LDMOS decreases by 63.8%, the transconductance(g<sub>m</sub>) increases by 8.3% and the switching delay decreases by 32% at the same BV. Furthermore, the figure-of-merit (FOM=BV<sup>2</sup>/R<sub>sp</sub>) of the TG-LDMOS equals to 14.6MW/cm<sup>2</sup>, exhibiting 172.7% improvement than that of C-LDMOS.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"20 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85809306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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