Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940000
A. Scheit, T. Lenke, D. Bolze, S. Chiussi, S. Stefanov, P. Gonzalez, T. Schumann, W. Skorupa
The aim of this study is to evaluate the feasibility to integrate excimer laser annealing (ELA) into the process flow to achieve higher doped and ideally box shaped profiles. The recrystallization, dopant distribution, and activation of boron or arsenic shallow implantations in germanium pre-amorphized silicon are investigated by comparing argon fluoride ELA, flash lamp annealing, and spike annealing. As a result the complete amorphous Silicon layer melts with ELA above 400 mJ/cm2 and subsequently recrystallizes taking the silicon substrate as crystal seed (ELA Liquid Phase Epitaxial Regrowth). The implanted dopants are uniformly distributed in the melted region. We achieved four to ten times sharper boron profiles and a dopant activation of up to 4×1020 cm-3 An active arsenic concentration of 1.6×1020 cm-3 was demonstrated.
{"title":"Dopant profile engineering using ArF excimer laser, flash lamp and spike annealing for junction formation","authors":"A. Scheit, T. Lenke, D. Bolze, S. Chiussi, S. Stefanov, P. Gonzalez, T. Schumann, W. Skorupa","doi":"10.1109/IIT.2014.6940000","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940000","url":null,"abstract":"The aim of this study is to evaluate the feasibility to integrate excimer laser annealing (ELA) into the process flow to achieve higher doped and ideally box shaped profiles. The recrystallization, dopant distribution, and activation of boron or arsenic shallow implantations in germanium pre-amorphized silicon are investigated by comparing argon fluoride ELA, flash lamp annealing, and spike annealing. As a result the complete amorphous Silicon layer melts with ELA above 400 mJ/cm2 and subsequently recrystallizes taking the silicon substrate as crystal seed (ELA Liquid Phase Epitaxial Regrowth). The implanted dopants are uniformly distributed in the melted region. We achieved four to ten times sharper boron profiles and a dopant activation of up to 4×1020 cm-3 An active arsenic concentration of 1.6×1020 cm-3 was demonstrated.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"78 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83644595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939980
G. Takaoka, H. Ryuto, M. Takeuchi, Ryou Tsujinaka
Oxygen cluster ion beams and/or monomer ion beams were used to investigate the sputtering and oxidation of solid surfaces such as silicon (Si) and poly-lactic acid (PLA) surfaces. For the oxygen cluster ion irradiation, the sputtered depth increased with increase of the acceleration voltage, and the sputtering yield was much larger than the value for oxygen monomer ion irradiation. Furthermore, for the oxidation process of Si and PLA surfaces, the simultaneous use of oxygen ion beams was more effective than either the cluster ion irradiation or the monomer ion irradiation.
{"title":"Sputtering and chemical modification of solid surfaces using oxygen ion beams","authors":"G. Takaoka, H. Ryuto, M. Takeuchi, Ryou Tsujinaka","doi":"10.1109/IIT.2014.6939980","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939980","url":null,"abstract":"Oxygen cluster ion beams and/or monomer ion beams were used to investigate the sputtering and oxidation of solid surfaces such as silicon (Si) and poly-lactic acid (PLA) surfaces. For the oxygen cluster ion irradiation, the sputtered depth increased with increase of the acceleration voltage, and the sputtering yield was much larger than the value for oxygen monomer ion irradiation. Furthermore, for the oxidation process of Si and PLA surfaces, the simultaneous use of oxygen ion beams was more effective than either the cluster ion irradiation or the monomer ion irradiation.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"24 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82208973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940006
Dawei Xu, Xinhong Cheng, Zhong Jian, Linyan Shen, C. Xia, D. Cao, Li Zheng, Yu Yuehui
A trench gate SOI LDMOS with an oxide trench in the drift region and a trench source plate (TG-LDMOS) is proposed to obtain a high breakdown voltage (BV) and low specific on-resistance (Rsp) simultaneously. The oxide trench extends the drift region in the vertical direction and reshapes the electric field, resulting in reduced cell pitch and Rsp. The trench source plate extends to the buried oxide layer (BOX) further enhances the RESURF effect and also works as a dielectric isolation trench. BV of 111V and Rsp of 0.87mΩ·cm2 are obtained for the TG-LDMOS with 3μm cell pitch. Compared with conventional LDMOS (C-LDMOS), Rsp of the TG-LDMOS decreases by 63.8%, the transconductance(gm) increases by 8.3% and the switching delay decreases by 32% at the same BV. Furthermore, the figure-of-merit (FOM=BV2/Rsp) of the TG-LDMOS equals to 14.6MW/cm2, exhibiting 172.7% improvement than that of C-LDMOS.
{"title":"New Trench gate LDMOS for low power applications","authors":"Dawei Xu, Xinhong Cheng, Zhong Jian, Linyan Shen, C. Xia, D. Cao, Li Zheng, Yu Yuehui","doi":"10.1109/IIT.2014.6940006","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940006","url":null,"abstract":"A trench gate SOI LDMOS with an oxide trench in the drift region and a trench source plate (TG-LDMOS) is proposed to obtain a high breakdown voltage (BV) and low specific on-resistance (R<sub>sp</sub>) simultaneously. The oxide trench extends the drift region in the vertical direction and reshapes the electric field, resulting in reduced cell pitch and R<sub>sp</sub>. The trench source plate extends to the buried oxide layer (BOX) further enhances the RESURF effect and also works as a dielectric isolation trench. BV of 111V and R<sub>sp</sub> of 0.87mΩ·cm<sup>2</sup> are obtained for the TG-LDMOS with 3μm cell pitch. Compared with conventional LDMOS (C-LDMOS), R<sub>sp</sub> of the TG-LDMOS decreases by 63.8%, the transconductance(g<sub>m</sub>) increases by 8.3% and the switching delay decreases by 32% at the same BV. Furthermore, the figure-of-merit (FOM=BV<sup>2</sup>/R<sub>sp</sub>) of the TG-LDMOS equals to 14.6MW/cm<sup>2</sup>, exhibiting 172.7% improvement than that of C-LDMOS.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"20 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85809306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940020
Y. Wang, Shaoyin Chen, Xiaoru Wang, M. Shen
Evolution of CMOS technology has created new opportunities for millisecond annealing beyond the traditional dopant activation and junction formation. Strain enhancement, gate stack property modifications, silicide formation, and contact interface engineering are a few examples. In this paper, we review various applications of millisecond annealing for advanced logic device fabrications. Extendibility to new materials, opportunities and challenges for DRAM applications are also discussed.
{"title":"Millisecond annealing for advanced device fabrications","authors":"Y. Wang, Shaoyin Chen, Xiaoru Wang, M. Shen","doi":"10.1109/IIT.2014.6940020","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940020","url":null,"abstract":"Evolution of CMOS technology has created new opportunities for millisecond annealing beyond the traditional dopant activation and junction formation. Strain enhancement, gate stack property modifications, silicide formation, and contact interface engineering are a few examples. In this paper, we review various applications of millisecond annealing for advanced logic device fabrications. Extendibility to new materials, opportunities and challenges for DRAM applications are also discussed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"80 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84097349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940008
Liping Wang, A. Brown, B. Cheng, A. Asenov
A simulation program, Anadope3D, developed to model ion implantations in FinFETs based on quasi-analytic methods, has been improved to include a set of analytical implantation models based on a Pearson distribution function, which is concise and computationally efficient. This C++ module has been integrated into the GSS atomistic device simulator GARAND, which enables more realistic doping distributions arising from ion implantation to be used for TCAD FinFET simulations. Simulations are performed on an example of an SOI FinFET with physical gate length of 20nm, including statistical simulations with Random Discrete Dopants (RDD). The impact of the realistic 3D doping profile on FinFET performance has been investigated.
{"title":"Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance","authors":"Liping Wang, A. Brown, B. Cheng, A. Asenov","doi":"10.1109/IIT.2014.6940008","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940008","url":null,"abstract":"A simulation program, Anadope3D, developed to model ion implantations in FinFETs based on quasi-analytic methods, has been improved to include a set of analytical implantation models based on a Pearson distribution function, which is concise and computationally efficient. This C++ module has been integrated into the GSS atomistic device simulator GARAND, which enables more realistic doping distributions arising from ion implantation to be used for TCAD FinFET simulations. Simulations are performed on an example of an SOI FinFET with physical gate length of 20nm, including statistical simulations with Random Discrete Dopants (RDD). The impact of the realistic 3D doping profile on FinFET performance has been investigated.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"72 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82393485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940049
J. Liao, Jung-Yi Guo, Yu-Min Lin, J. Hsieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Continuous technology scaling on NAND FLASH results in serious FG poly depletion issue due to Phosphorous out-gassing and degrades the cell reliability. Phosphorous implantation (P-IMP) into in-situ dope poly can improve poly depletion issue, but the FG bending and FG height loss were observed. In this study, we have successfully explored the methods to minimize FG bending and FG height loss issue by adding plasma oxide (PO) as screen oxide and/or changing the rotation times and temperature control of ion implantation. Finally, P-IMP on FG was validated at 36nm NAND FLASH device and shows significantly improvement on FG depletion and cell reliability.
{"title":"Investigation of floating gate depletion effect on NAND FLASH reliability","authors":"J. Liao, Jung-Yi Guo, Yu-Min Lin, J. Hsieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu","doi":"10.1109/IIT.2014.6940049","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940049","url":null,"abstract":"Continuous technology scaling on NAND FLASH results in serious FG poly depletion issue due to Phosphorous out-gassing and degrades the cell reliability. Phosphorous implantation (P-IMP) into in-situ dope poly can improve poly depletion issue, but the FG bending and FG height loss were observed. In this study, we have successfully explored the methods to minimize FG bending and FG height loss issue by adding plasma oxide (PO) as screen oxide and/or changing the rotation times and temperature control of ion implantation. Finally, P-IMP on FG was validated at 36nm NAND FLASH device and shows significantly improvement on FG depletion and cell reliability.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75625906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940033
Y. Kato, D. Kimura, K. Yano, S. Kumakura, Y. Imai, T. Nishiokada, F. Sato, T. Iida
A new concept on magnetic field of plasma production and confinement has been proposed to enhance efficiency of an electron cyclotron resonance (ECR) plasma for broad and dense ion beam source under the low pressure. We make this source a part of new tandem type ion source for the first stage. We are also constructing the large bore second stage for synthesizing, extracting and analyzing ions. Both ECR plasmas are necessary to be available to coexist and to be operated individually with different plasma parameters. In the first stage, we optimize the ion beam current and ion saturation current by a mobile plate tuner. They change by the position of the plate tuner for single and multi-frequencies microwaves. The peak positions of them are close to the position where the microwave mode forms standing wave between the plate tuner and the extractor. We show a new guiding principle, which the number of efficiently azimuthal microwave mode should be selected to fit to that of multipole of comb-shaped magnets. We obtained the excitation of selective modes using new mobile plate tuner to enhance ECR efficiency. Furthermore we first obtained charge state distributions of ion beams extracted from the first stage after constructing the second stage and its beam line.
{"title":"Selective microwave mode excitation and charge state distribution on the first stage of tandem type ECRIS","authors":"Y. Kato, D. Kimura, K. Yano, S. Kumakura, Y. Imai, T. Nishiokada, F. Sato, T. Iida","doi":"10.1109/IIT.2014.6940033","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940033","url":null,"abstract":"A new concept on magnetic field of plasma production and confinement has been proposed to enhance efficiency of an electron cyclotron resonance (ECR) plasma for broad and dense ion beam source under the low pressure. We make this source a part of new tandem type ion source for the first stage. We are also constructing the large bore second stage for synthesizing, extracting and analyzing ions. Both ECR plasmas are necessary to be available to coexist and to be operated individually with different plasma parameters. In the first stage, we optimize the ion beam current and ion saturation current by a mobile plate tuner. They change by the position of the plate tuner for single and multi-frequencies microwaves. The peak positions of them are close to the position where the microwave mode forms standing wave between the plate tuner and the extractor. We show a new guiding principle, which the number of efficiently azimuthal microwave mode should be selected to fit to that of multipole of comb-shaped magnets. We obtained the excitation of selective modes using new mobile plate tuner to enhance ECR efficiency. Furthermore we first obtained charge state distributions of ion beams extracted from the first stage after constructing the second stage and its beam line.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90532647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940059
M. Jelinek, W. Schustereder, J. Laven, H. Schulze, S. Kirnstoetter, M. Rommel, L. Frey
Hydrogen implantation has become an important application in the fabrication of power semiconductor devices. With the product requirement of a well-defined implantation profile, adequate control of the incident beam angle is necessary in order to avoid channeling effects. With respect to the different scan systems of commercial implanters and the crystal alignment of the bulk material the implant tilt and twist angles have to be adapted. We used commercially available <;100>-oriented silicon wafers to examine planar channeling along a {110}-plane for proton energies in the range of 0.5-2.5 MeV. The critical angle as a function of proton energy is determined from photothermal response measurements (TWIN).
{"title":"MeV-proton channeling in crystalline silicon","authors":"M. Jelinek, W. Schustereder, J. Laven, H. Schulze, S. Kirnstoetter, M. Rommel, L. Frey","doi":"10.1109/IIT.2014.6940059","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940059","url":null,"abstract":"Hydrogen implantation has become an important application in the fabrication of power semiconductor devices. With the product requirement of a well-defined implantation profile, adequate control of the incident beam angle is necessary in order to avoid channeling effects. With respect to the different scan systems of commercial implanters and the crystal alignment of the bulk material the implant tilt and twist angles have to be adapted. We used commercially available <;100>-oriented silicon wafers to examine planar channeling along a {110}-plane for proton energies in the range of 0.5-2.5 MeV. The critical angle as a function of proton energy is determined from photothermal response measurements (TWIN).","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"27 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83592847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940022
J. Deluca, S. Satoh, H. Chen, T. Fox, S. Kondratenko, R. Reece
Many IC and CIS manufacturers still rely heavily on batch high energy ion implanters such as the Axcelis HE3 and Paradigm XE systems. Angle control continues to become increasingly important with the scaling of devices and the increasing use of channeled implants to reduce the number of implant steps needed to produce a box-like dopant profile. The use of channeled implants limits the use of batch ion implanters for these applications due to the cone angle effect. The introduction of serial high energy ion implanters to replace the batch implanters has exposed subtle differences in damage characteristics related to the differences in tool architecture. Investigation into second order differences in the damage characteristics of the single wafer and batch implanters have resulted in the development of a new system for modifying the electrostatic scanning of the ion beam on the Purion XE with implications for improvement in damage reduction, low dose stability and utilization of the system's mechanical throughput limit.
{"title":"Damage engineering on Purion XE™ high energy ion implanter","authors":"J. Deluca, S. Satoh, H. Chen, T. Fox, S. Kondratenko, R. Reece","doi":"10.1109/IIT.2014.6940022","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940022","url":null,"abstract":"Many IC and CIS manufacturers still rely heavily on batch high energy ion implanters such as the Axcelis HE3 and Paradigm XE systems. Angle control continues to become increasingly important with the scaling of devices and the increasing use of channeled implants to reduce the number of implant steps needed to produce a box-like dopant profile. The use of channeled implants limits the use of batch ion implanters for these applications due to the cone angle effect. The introduction of serial high energy ion implanters to replace the batch implanters has exposed subtle differences in damage characteristics related to the differences in tool architecture. Investigation into second order differences in the damage characteristics of the single wafer and batch implanters have resulted in the development of a new system for modifying the electrostatic scanning of the ion beam on the Purion XE with implications for improvement in damage reduction, low dose stability and utilization of the system's mechanical throughput limit.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76460963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939962
A. G. Lind, K. Jones, C. Hatem
A range of implant temperatures from 20 to 300C are studied for fixed 20 keV implant energy and 6E14 cm-2 dose Si implants into In0.53Ga0.47As. Hall effect measurements performed on the samples after rapid thermal annealing reveal that Si implant activation is actually maximized for intermediate implant temperatures from 50-110C that are shown to be non-amorphizing. While these results echo the conclusion of previous studies that elevated temperature Si implants into In0.53Ga0.47As show increased activation over implants that are likely amorphizing, it is clear that there is a temperature window from 50-110C where activation is improved with increasing thermal budget for the dose and energy studied. Calculated Si solubilities of up to 1.3E19 cm-3 and sheet resistances as low as 26 ohm/sq are achieved for a 10 keV 5E14 cm-2 Si implant performed at 80C after 750C 5s annealing.
{"title":"Activation and defect dissolution of non-amorphizing, elevated temperature Si+ implants into In0.53Ga0.47As","authors":"A. G. Lind, K. Jones, C. Hatem","doi":"10.1109/IIT.2014.6939962","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939962","url":null,"abstract":"A range of implant temperatures from 20 to 300C are studied for fixed 20 keV implant energy and 6E14 cm-2 dose Si implants into In0.53Ga0.47As. Hall effect measurements performed on the samples after rapid thermal annealing reveal that Si implant activation is actually maximized for intermediate implant temperatures from 50-110C that are shown to be non-amorphizing. While these results echo the conclusion of previous studies that elevated temperature Si implants into In0.53Ga0.47As show increased activation over implants that are likely amorphizing, it is clear that there is a temperature window from 50-110C where activation is improved with increasing thermal budget for the dose and energy studied. Calculated Si solubilities of up to 1.3E19 cm-3 and sheet resistances as low as 26 ohm/sq are achieved for a 10 keV 5E14 cm-2 Si implant performed at 80C after 750C 5s annealing.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"69 3 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79684422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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