Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257027
S. Gupta, J. Kulkarni, S. Datta, K. Roy
We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier loweringlthinning (DIBLlT) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.
{"title":"Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in OFF current","authors":"S. Gupta, J. Kulkarni, S. Datta, K. Roy","doi":"10.1109/DRC.2012.6257027","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257027","url":null,"abstract":"We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier loweringlthinning (DIBLlT) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"5 1","pages":"55-56"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81987412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257025
Ting Liu, S. Wagner, J. Sturm
Highly stable a-Si TFTs reported recently with extremely long operating lifetimes under DC gate bias are attractive for analog drivers of the OLEDs in AMOLED displays. At room temperature, the time for the DC saturation current to drop to 50% is predicted to be 100 to 1,000 years. However, the lifetimes were extrapolated with a stretched-exponential model for defect creation in a-Si, based on only month-long room temperature tests. In this study, we present a two-stage threshold voltage shift model for lifetime prediction from temperature dependent measurements. We find that (i) a “unified stretched exponential fit” models the drain current degradation from 60°C to 140°; and (ii) there is a second instability mechanism that initially dominates up to hours or days at low temperatures, so that tests conducted only at room temperature may not predict lifetime accurately.
{"title":"Two-stage model for lifetime prediction of highly stable amorphous-silicon thin-film transistors under low-gate field","authors":"Ting Liu, S. Wagner, J. Sturm","doi":"10.1109/DRC.2012.6257025","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257025","url":null,"abstract":"Highly stable a-Si TFTs reported recently with extremely long operating lifetimes under DC gate bias are attractive for analog drivers of the OLEDs in AMOLED displays. At room temperature, the time for the DC saturation current to drop to 50% is predicted to be 100 to 1,000 years. However, the lifetimes were extrapolated with a stretched-exponential model for defect creation in a-Si, based on only month-long room temperature tests. In this study, we present a two-stage threshold voltage shift model for lifetime prediction from temperature dependent measurements. We find that (i) a “unified stretched exponential fit” models the drain current degradation from 60°C to 140°; and (ii) there is a second instability mechanism that initially dominates up to hours or days at low temperatures, so that tests conducted only at room temperature may not predict lifetime accurately.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"35 1","pages":"245-246"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86625041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257013
M. Shatalov, Wenhong Sun, A. Lunev, Xuhong Hu, A. Dobrinsky, Y. Bilenko, Jinwei Yang, M. Shur, R. Gaska, C. Moe, G. Garrett, M. Wraback
III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) offer smaller size, wider choice of peak emission wavelengths, lower power consumption and reduced cost compared to mercury vapor lamps and other UV light sources. Increasing efficiency of DUV LEDs accelerates their applications in bio-agent detection, analytical instrumentation, phototherapy, disinfection, biotechnology and sensing. We report on 278 nm DUV LEDs with external quantum efficiency exceeding 10 % achieved by improvements of material quality and light extraction.
{"title":"278 nm deep ultraviolet LEDs with 11% external quantum efficiency","authors":"M. Shatalov, Wenhong Sun, A. Lunev, Xuhong Hu, A. Dobrinsky, Y. Bilenko, Jinwei Yang, M. Shur, R. Gaska, C. Moe, G. Garrett, M. Wraback","doi":"10.1109/DRC.2012.6257013","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257013","url":null,"abstract":"III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) offer smaller size, wider choice of peak emission wavelengths, lower power consumption and reduced cost compared to mercury vapor lamps and other UV light sources. Increasing efficiency of DUV LEDs accelerates their applications in bio-agent detection, analytical instrumentation, phototherapy, disinfection, biotechnology and sensing. We report on 278 nm DUV LEDs with external quantum efficiency exceeding 10 % achieved by improvements of material quality and light extraction.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"16 1","pages":"255-256"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77706377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257028
M. Lemme, S. Vaziri, A. D. Smith, M. Ostling
The future manufacturability of graphene devices depends on the availability of large-scale graphene fabrication methods. While chemical vapor deposition and epitaxy from silicon carbide both promise scalability, they are not (yet) fully compatible with silicon technology. Direct growth of graphene on insulating substrates would be a major step, but is still at a very early stage [1]. This has implications on potential entry points of graphene as an add-on to mainstream silicon technology, which will be discussed in the talk.
{"title":"Alternative graphene devices: beyond field effect transistors","authors":"M. Lemme, S. Vaziri, A. D. Smith, M. Ostling","doi":"10.1109/DRC.2012.6257028","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257028","url":null,"abstract":"The future manufacturability of graphene devices depends on the availability of large-scale graphene fabrication methods. While chemical vapor deposition and epitaxy from silicon carbide both promise scalability, they are not (yet) fully compatible with silicon technology. Direct growth of graphene on insulating substrates would be a major step, but is still at a very early stage [1]. This has implications on potential entry points of graphene as an add-on to mainstream silicon technology, which will be discussed in the talk.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"70 1","pages":"24a-24b"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74668218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256983
A. Talukdar, M. Qazi, G. Koley
Summary form only given.We report, for the first time, an ultra high gauge factor of more than 3500 observed using AlGaN/GaN Heterostructure Field Effect Transistor (HFET) embedded GaN piezoresistive microcantilever. In addition, the deflection transduction signal from the HFET was utilized to determine dynamic bending as well as AC frequency response of the cantilever. Finally, the piezoresistive microcantilver was used to detect very small acoustic pressure waves generated by a piezo chip oscillated at sub nm amplitude at the resonance frequency of the cantilever positioned 1 cm away, highlighting the utility of these cantilevers as highly sensitive ultrasonic transducers. FET embedded microcantilevers are ideal for developing integrated electronic detection platform for biological and chemical analytes. GaN microcantilever with integrated AlGaN/GaN HFET deflection transducer offers very high mechanical, thermal, and chemical stability, in addition to extraordinary deflection sensitivity due to its strong piezoelectric properties. The piezoelectric property of III-V Nitrides causes a highly mobile (>;1500 cm2/Vs) two dimensional electron gas (2DEG) to form at the AlGaN/GaN interface, which gets strongly affected by the deflection induced strain. In addition, the electron mobility also changes due to the change in effective mass. The combined changes in 2DEG and mobility offer very high deflection sensitivity, verified through COMSOL finite element simulations and experimental observations. The effect of mechanical strain caused by microcantilever bending on the 2DEG and the AlGaN/GaN HFET characteristics has been reported experimentally [1] and theoretically [2] earlier, but this for the first time we have obtained such a high Gauge Factor. Microcantilevers were fabricated using III-V Nitride layers on Si(111). The layer structure consisted of i-GaN (2 nm)/ AlGaN (17.5 nm, 26% Al)/i-GaN (1 μm)/Transition layer (1.1 μm)/Si (111) substrate (500 μm). Fig. 1 (a) shows the SEM image of the fabricated device with the HFET shown in the inset. The HFET was fabricated with initial 200 nm mesa etching, followed by Ti(20 nm)/Al(100 nm)/Ti(45 nm)/Au(55 nm) metal stack deposition and rapid thermal annealing for ohmic contact formation. For gate contact, Ni(25 nm)/Au(375 nm) Schottky barrier was used. The fabricated microcantilever dimension is 350×50×2 μm. The GaN cantilever pattern was etched down using Ch based inductively coupled plasma etch process. Fig. 1 (b) shows the schematics of the experimental setup using our wire bonded device (shown as inset in Fig. 2) and Nanopositioner's (PI-611 Z). Fig. 2 shows the Id-V d characteristics of one of our best devices for different gate bias. In Fig. 3 the static bending performance is shown where the drain current is found to change by 6.3 % in magnitude, which gives a gauge factor of 3532. Both the downward and upward bending of cantilever exhibited similar changes. The movement of the nanopositioner was contr
{"title":"Highly sensitive III–V nitride based piezoresistive microcantilever using embedded AlGaN/GaN HFET as ultrasonic detector","authors":"A. Talukdar, M. Qazi, G. Koley","doi":"10.1109/DRC.2012.6256983","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256983","url":null,"abstract":"Summary form only given.We report, for the first time, an ultra high gauge factor of more than 3500 observed using AlGaN/GaN Heterostructure Field Effect Transistor (HFET) embedded GaN piezoresistive microcantilever. In addition, the deflection transduction signal from the HFET was utilized to determine dynamic bending as well as AC frequency response of the cantilever. Finally, the piezoresistive microcantilver was used to detect very small acoustic pressure waves generated by a piezo chip oscillated at sub nm amplitude at the resonance frequency of the cantilever positioned 1 cm away, highlighting the utility of these cantilevers as highly sensitive ultrasonic transducers. FET embedded microcantilevers are ideal for developing integrated electronic detection platform for biological and chemical analytes. GaN microcantilever with integrated AlGaN/GaN HFET deflection transducer offers very high mechanical, thermal, and chemical stability, in addition to extraordinary deflection sensitivity due to its strong piezoelectric properties. The piezoelectric property of III-V Nitrides causes a highly mobile (>;1500 cm2/Vs) two dimensional electron gas (2DEG) to form at the AlGaN/GaN interface, which gets strongly affected by the deflection induced strain. In addition, the electron mobility also changes due to the change in effective mass. The combined changes in 2DEG and mobility offer very high deflection sensitivity, verified through COMSOL finite element simulations and experimental observations. The effect of mechanical strain caused by microcantilever bending on the 2DEG and the AlGaN/GaN HFET characteristics has been reported experimentally [1] and theoretically [2] earlier, but this for the first time we have obtained such a high Gauge Factor. Microcantilevers were fabricated using III-V Nitride layers on Si(111). The layer structure consisted of i-GaN (2 nm)/ AlGaN (17.5 nm, 26% Al)/i-GaN (1 μm)/Transition layer (1.1 μm)/Si (111) substrate (500 μm). Fig. 1 (a) shows the SEM image of the fabricated device with the HFET shown in the inset. The HFET was fabricated with initial 200 nm mesa etching, followed by Ti(20 nm)/Al(100 nm)/Ti(45 nm)/Au(55 nm) metal stack deposition and rapid thermal annealing for ohmic contact formation. For gate contact, Ni(25 nm)/Au(375 nm) Schottky barrier was used. The fabricated microcantilever dimension is 350×50×2 μm. The GaN cantilever pattern was etched down using Ch based inductively coupled plasma etch process. Fig. 1 (b) shows the schematics of the experimental setup using our wire bonded device (shown as inset in Fig. 2) and Nanopositioner's (PI-611 Z). Fig. 2 shows the Id-V d characteristics of one of our best devices for different gate bias. In Fig. 3 the static bending performance is shown where the drain current is found to change by 6.3 % in magnitude, which gives a gauge factor of 3532. Both the downward and upward bending of cantilever exhibited similar changes. The movement of the nanopositioner was contr","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"1 1","pages":"19-20"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82947284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256960
S. Bhave
Opto-mechanical systems offer one of the most sensitive methods for detecting mechanical motion using shifts in the optical resonance frequency of the optomechanical resonator. Presently, these systems are used for measuring mechanical thermal noise displacement or mechanical motion actuated by optical forces. Meanwhile, electrostatic capacitive actuation and detection is the main transduction scheme used in RF MEMS resonators. The use of electrostatics is convenient as it allows direct integration with electronics used for processing the RF signals. In this presentation, the author will introduce a method for actuating an opto-mechanical resonator using electrostatic forces and sensing of mechanical motion by using the optical intensity modulation at the output of an optomechanical resonator, integrated into a monolithic system fabricated on a silicon-on-insulator (SOI) platform. The author will discuss new applications enabled by this hybrid system including opto-acoustic oscillators and opto-mechanical accelerometers.
{"title":"Silicon monolithic MEMS + photonic systems","authors":"S. Bhave","doi":"10.1109/DRC.2012.6256960","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256960","url":null,"abstract":"Opto-mechanical systems offer one of the most sensitive methods for detecting mechanical motion using shifts in the optical resonance frequency of the optomechanical resonator. Presently, these systems are used for measuring mechanical thermal noise displacement or mechanical motion actuated by optical forces. Meanwhile, electrostatic capacitive actuation and detection is the main transduction scheme used in RF MEMS resonators. The use of electrostatics is convenient as it allows direct integration with electronics used for processing the RF signals. In this presentation, the author will introduce a method for actuating an opto-mechanical resonator using electrostatic forces and sensing of mechanical motion by using the optical intensity modulation at the output of an optomechanical resonator, integrated into a monolithic system fabricated on a silicon-on-insulator (SOI) platform. The author will discuss new applications enabled by this hybrid system including opto-acoustic oscillators and opto-mechanical accelerometers.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"29 1","pages":"17-18"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83731519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6257026
A. Itsuno, J. Phillips, S. Velicu
HgCdTe-based infrared (IR) detectors remain the front-runner for high performance IR focal plane array (FPA) applications due to their favorable material and optical properties. While state-of-the-art HgCdTe p-n junction technology such as the double layer planar heterostructure (DLPH) devices can achieve near theoretical performance in the mid-wave and long-wave infrared (MWIR, LWIR) spectral ranges, the cryogenic cooling requirements to suppress dark current are still much greater than desired. HgCdTe material growth by molecular beam epitaxy (MBE) provides the accurate control over alloy composition and doping required to achieve future detector architectures that may serve to reduce dark current for enhanced operation. However, controllable in situ p-type doping of HgCdTe by MBE is still problematic. As a potential solution to address these issues, we propose a unipolar, type-I barrier-integrated HgCdTe nBn IR detector based on similar principles to the type-II nBn structure used in III-V materials [1] with the intent that it may serve as a basis for advanced HgCdTe-based architectures for reduced cooling requirements.
{"title":"Unipolar barrier-integrated HgCdTe infrared detectors","authors":"A. Itsuno, J. Phillips, S. Velicu","doi":"10.1109/DRC.2012.6257026","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257026","url":null,"abstract":"HgCdTe-based infrared (IR) detectors remain the front-runner for high performance IR focal plane array (FPA) applications due to their favorable material and optical properties. While state-of-the-art HgCdTe p-n junction technology such as the double layer planar heterostructure (DLPH) devices can achieve near theoretical performance in the mid-wave and long-wave infrared (MWIR, LWIR) spectral ranges, the cryogenic cooling requirements to suppress dark current are still much greater than desired. HgCdTe material growth by molecular beam epitaxy (MBE) provides the accurate control over alloy composition and doping required to achieve future detector architectures that may serve to reduce dark current for enhanced operation. However, controllable in situ p-type doping of HgCdTe by MBE is still problematic. As a potential solution to address these issues, we propose a unipolar, type-I barrier-integrated HgCdTe nBn IR detector based on similar principles to the type-II nBn structure used in III-V materials [1] with the intent that it may serve as a basis for advanced HgCdTe-based architectures for reduced cooling requirements.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"23 1","pages":"257-258"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90820474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256942
I. Young
This paper describes a methodology for benchmarking beyond CMOS exploratory devices for computation using metrics that can provide insights about the device fundamental operation. A more detailed investigation of circuits based upon two beyond-CMOS devices is given in the paper. First tunneling FET (TFET) circuits are compared to low power CMOS circuits. Then the All-Spin Logic device (ASLD) is described and a spin circuit theory based simulator is used to show the functional transient operation of an all spin logic circuit.
{"title":"Mapping a path to the beyond-CMOS technology for computation","authors":"I. Young","doi":"10.1109/DRC.2012.6256942","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256942","url":null,"abstract":"This paper describes a methodology for benchmarking beyond CMOS exploratory devices for computation using metrics that can provide insights about the device fundamental operation. A more detailed investigation of circuits based upon two beyond-CMOS devices is given in the paper. First tunneling FET (TFET) circuits are compared to low power CMOS circuits. Then the All-Spin Logic device (ASLD) is described and a spin circuit theory based simulator is used to show the functional transient operation of an all spin logic circuit.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"30 1","pages":"3-6"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91317271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256933
E. Harvard, J. Shealy
In conclusion, we present an AIGaN/GaN HEMT which exhibits a high off-state breakdown voltage with small features and without a field plate, while maintaining high bandwidth. High voltage load line mapping of these devices at 2 GHz is in progress.
{"title":"440 V AlSiN-passivated AlGaN/GaN high electron mobility transistor with 40 GHz bandwidth","authors":"E. Harvard, J. Shealy","doi":"10.1109/DRC.2012.6256933","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256933","url":null,"abstract":"In conclusion, we present an AIGaN/GaN HEMT which exhibits a high off-state breakdown voltage with small features and without a field plate, while maintaining high bandwidth. High voltage load line mapping of these devices at 2 GHz is in progress.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"14 1","pages":"75-76"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87798139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256971
M. Ueda, Y. Kaneko, Y. Nishitani, T. Morie, E. Fujii
A simple synaptic device with a spike-timing-dependent synaptic plasticity (STDP) learning function is a key device that can realize a brain-like processor. STDP is a learning mechanism of synapses in mammalian brains [1]. A memristor [2, 3] is a promising candidate for synaptic devices. However, since the conventional memristor is a two-terminal electric element and the signal magnitude at learning exceeds the processing, it is difficult to realize STDP learning by simultaneously processing the signal. We proposed a unique three-terminal memristor using a ferroelectric thin film [4]. Its three-terminal device structure enables the STDP function without disturbing the signal processing between neurons (Fig. 1). This all oxide memristor (OxiM) has a ferroelectric gate field-effect transistor structure (Fig. 2). Since the polarization of Pb(Zr,Ti)O3 film is changed by applying gate voltage (VG), the channel conductance at the ZnO / Pr(Zr,Ti)O3 interface can be modulated (Fig. 3). Memorized conductance can be maintained without fluctuation [4]. In addition, ferroelectric polarization can be modulated by changing the height and the width of the applied voltage pulse to the gate electrode. Fig. 4 shows the conduction change after applying pulse voltages.
{"title":"Biologically-inspired learning device using three-terminal ferroelectric memristor","authors":"M. Ueda, Y. Kaneko, Y. Nishitani, T. Morie, E. Fujii","doi":"10.1109/DRC.2012.6256971","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256971","url":null,"abstract":"A simple synaptic device with a spike-timing-dependent synaptic plasticity (STDP) learning function is a key device that can realize a brain-like processor. STDP is a learning mechanism of synapses in mammalian brains [1]. A memristor [2, 3] is a promising candidate for synaptic devices. However, since the conventional memristor is a two-terminal electric element and the signal magnitude at learning exceeds the processing, it is difficult to realize STDP learning by simultaneously processing the signal. We proposed a unique three-terminal memristor using a ferroelectric thin film [4]. Its three-terminal device structure enables the STDP function without disturbing the signal processing between neurons (Fig. 1). This all oxide memristor (OxiM) has a ferroelectric gate field-effect transistor structure (Fig. 2). Since the polarization of Pb(Zr,Ti)O3 film is changed by applying gate voltage (VG), the channel conductance at the ZnO / Pr(Zr,Ti)O3 interface can be modulated (Fig. 3). Memorized conductance can be maintained without fluctuation [4]. In addition, ferroelectric polarization can be modulated by changing the height and the width of the applied voltage pulse to the gate electrode. Fig. 4 shows the conduction change after applying pulse voltages.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"31 1","pages":"275-276"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90250491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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