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Applying the high-k dielectric materials in vertical multilayer graphene nanoribbon (V-MLGNR) based interconnect for improving transmission performance 在基于垂直多层石墨烯纳米带(V-MLGNR)的互联中应用高介电材料以提高传输性能
IF 2.7 Q2 PHYSICS, CONDENSED MATTER Pub Date : 2024-07-04 DOI: 10.1016/j.micrna.2024.207926
Peng Xu , Huan Huang , Fa Zou , Lei Xie

In order to solve the electrical performance limitations of horizontal multilayer graphene nanoribbon (H-MLGNR) based interconnect, a new geometric structure of vertical multilayer graphene nanoribbon (V-MLGNR) based interconnect is proposed in this paper. A numerical model for H-MLGNR and V-MLGNR based interconnects is established to investigate the performance in time and frequency domain, where the high-k dielectric materials (HKDM) are introduced for improving their transmission performance. The computation results demonstrate that the delay time for H-MLGNR and V-MLGNR based interconnects with embedded BaTiO3–Ni case can be reduced over 89.601 % and 93.723 % in comparison to the original H-MLGNR and V-MLGNR based interconnects, respectively. The corresponding 3-dB bandwidth for them can be expanded over 1.928 and 2.957 times, respectively. Moreover, it is manifested that the delay time of V-MLGNR based interconnect for the original, embedding the HfO2, TiO2, SrTiO3, BaTiO3, 6.0 vol% BaTiO3–Ni and 12.0 vol% BaTiO3–Ni cases can be reduced over 11.644 %, 13.269 %, 16.851 %, 22.311 %, 27.589 %, 33.608 % and 46.556 % as compared with the conventional H-MLGNR based interconnect, respectively. Meanwhile the corresponding 3-dB bandwidth of the former for the original, embedding the HfO2, TiO2, SrTiO3, BaTiO3, 6.0 vol% BaTiO3–Ni and 12.0 vol% BaTiO3–Ni cases can be enhanced over 1.113, 1.126, 1.155, 1.207, 1.266, 1.366 and 1.737 times as compared with the latter, respectively. In addition, the signal integrity of the proposed V-MLGNR based interconnects with embedded HKDM is greater than H-MLGNR based interconnects, while the power consumption of the former is slightly higher than the latter. Therefore, the proposed new interconnect structure concerning the V-MLGNR with embedded HKDM would be rewarding to enhance transmission performance of interconnect system in VLIS circuits.

为了解决基于水平多层石墨烯纳米带(H-MLGNR)互连的电气性能限制,本文提出了一种基于垂直多层石墨烯纳米带(V-MLGNR)互连的新型几何结构。本文建立了基于 H-MLGNR 和 V-MLGNR 互连的数值模型,以研究其在时域和频域的性能,其中引入了高介电材料 (HKDM) 以改善其传输性能。计算结果表明,与原始的 H-MLGNR 和 V-MLGNR 互连相比,嵌入 BaTiO-Ni 的 H-MLGNR 和 V-MLGNR 互连的延迟时间分别缩短了 89.601 % 和 93.723 %。相应的 3-dB 带宽分别扩大了 1.928 倍和 2.957 倍。此外,基于 V-MLGNR 的互联线路的延迟时间表现为原始线路、嵌入 HfO、TiO、SrTiO、BaTiO、6.0 vol% BaTiO-Ni 和 12.与基于 H-MLGNR 的传统互连相比,嵌入 HfO、TiO、SrTiO、BaTiO、6.0 vol% BaTiO-Ni 和 12.0 vol% BaTiO-Ni 的情况可分别减少 11.644 %、13.269 %、16.851 %、22.311 %、27.589 %、33.608 % 和 46.556 %。同时,与后者相比,前者在原始、嵌入 HfO、TiO、SrTiO、BaTiO、6.0 vol% BaTiO-Ni 和 12.0 vol% BaTiO-Ni 情况下的相应 3-dB 带宽分别提高了 1.113、1.126、1.155、1.207、1.266、1.366 和 1.737 倍。此外,基于嵌入式 HKDM 的拟议 V-MLGNR 互连的信号完整性高于基于 H-MLGNR 的互连,而前者的功耗略高于后者。因此,所提出的带有嵌入式 HKDM 的 V-MLGNR 新型互连结构将有助于提高 VLIS 电路中互连系统的传输性能。
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引用次数: 0
Noise and sensitivity analysis of the dielectric modulated reconfigurable SiNW-SBT for biosensor applications 用于生物传感器应用的介电调制可重构 SiNW-SBT 的噪声和灵敏度分析
IF 2.7 Q2 PHYSICS, CONDENSED MATTER Pub Date : 2024-07-01 DOI: 10.1016/j.micrna.2024.207923
Anil Kumar, Sumit Kale

For the first time, we reported the noise and sensitivity analysis of the Dielectric Modulated Reconfigurable Silicon Nanowire-based Schottky Barrier Transistor (DMR SiNW-SBT) for biosensor applications. To validate the simulation, we present experimental calibration of the DMR SiNW-SBT biosensor. The biomolecules having different dielectric constants and charge densities are immobilized in the cavity region under the control gate. These biomolecules modulate the Schottky junction width at the source channel interface and enhance the drain current of the biosensor. The simulation results indicate that the proposed device ION and VTH sensitivity improved by 54.65 % and 85.71 %, respectively, with the state-of-the-art biosensors. Noise analysis shows that the NFmin decreased by 190.32 % and offers a low source impedance of 70Ω, which minimizes signal loss and distortion. Additionally, we investigate the linearity parameters that outperformed the FET-based biosensors. The gm3 experiences a reduction of 123.21 %, while the VIP3 sees an increase of 7.87 % and the IIP3 shows a rise of 7.21 %. Furthermore, we have conducted device optimization by varying the cavity length and thickness. We also outline potential fabrication steps for the DMR SiNW-SBT biosensor. Thus, results show that the proposed biosensor emerges as a promising candidate for advanced biosensing applications with high sensitivity, enhanced linearity, and robust noise resilience.

我们首次报道了用于生物传感器应用的介质调制可重构硅纳米线肖特基势垒晶体管(DMR SiNW-SBT)的噪声和灵敏度分析。为了验证模拟结果,我们对 DMR SiNW-SBT 生物传感器进行了实验校准。具有不同介电常数和电荷密度的生物分子被固定在控制栅极下的空腔区域。这些生物分子可调节源通道接口的肖特基结宽度,并增强生物传感器的漏极电流。仿真结果表明,与最先进的生物传感器相比,拟议器件的 ION 和 VTH 灵敏度分别提高了 54.65% 和 85.71%。噪声分析表明,NFmin 降低了 190.32%,并提供了 70Ω 的低源阻抗,从而最大限度地减少了信号损失和失真。此外,我们还对线性参数进行了研究,结果表明其性能优于基于 FET 的生物传感器。gm3 下降了 123.21%,VIP3 上升了 7.87%,IIP3 上升了 7.21%。此外,我们还通过改变空腔长度和厚度对器件进行了优化。我们还概述了 DMR SiNW-SBT 生物传感器的潜在制造步骤。因此,研究结果表明,所提出的生物传感器具有灵敏度高、线性度强、抗噪声能力强等优点,是先进生物传感应用的理想候选器件。
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引用次数: 0
The role of process and geometrical parameters of gate stack Inverted-T shape junction less FET at 20 nm technology node 20 纳米技术节点下栅极堆叠反 T 型结少 FET 的工艺和几何参数作用
IF 2.7 Q2 PHYSICS, CONDENSED MATTER Pub Date : 2024-06-25 DOI: 10.1016/j.micrna.2024.207924
Sameeksha Munjal, Neelam Rup Prakash, Jasbir Kaur, Komal

In the present era, FET devices are seamlessly integrated with complex circuits that can be used to realize chips capable of operating at a significantly higher speed. These designed devices can meet the requisite of circuits used in designing mobile phones, tablets and laptops, thereby enhancing the overall performance. The present work focuses on designing of gate stack inverted-T junctionless FET at 20 nm technology node. Both static and low frequency characteristics of device such as threshold voltage (VTh), transconductance (gm), on (ION) & off (IOFF) state currents, as well as its high-frequency characteristics like total gate capacitance (Cgg), cut-off frequency (fT), maximum oscillation frequency (fmax) and gain bandwidth product (GBW) are methodically demonstrated with alterations in the device process and geometrical variations. The parameters such as height of fin, width of fin and work function are varied to study their impact. The SS, DIBL, ION/IOFF (current switching ratio) and VTh, for 20 nm gate length are observed as 67.94 mV/dec, 34.32 mV/V, 108, 0.32 V, respectively. The fmax is determined to be in the THz range and has early voltage of approximately 6.12V. Additionally, the effect of temperature is also studied by varying it in the range of 250 K–450 K. Analysis and virtual modelling of device is carried out using Visual TCAD. In addition, p-channel transistor is designed along with the n-channel configuration to investigate the device performance for CMOS based circuits. The noise margin and average delay of the inverter circuit are observed to be 0.37 V and 36.7 ps respectively.

在当今时代,场效应晶体管器件与复杂电路无缝集成,可用于实现运行速度更高的芯片。这些设计的器件可以满足设计手机、平板电脑和笔记本电脑时对电路的要求,从而提高整体性能。本研究的重点是在 20 纳米技术节点上设计栅极堆叠倒 T 无结 FET。通过改变器件工艺和几何变化,有条不紊地展示了器件的静态和低频特性,如阈值电压(VTh)、跨导(gm)、导通(ION)和关断(IOFF)状态电流,以及高频特性,如总栅极电容(Cgg)、截止频率(fT)、最大振荡频率(fmax)和增益带宽积(GBW)。通过改变鳍片高度、鳍片宽度和功函数等参数来研究它们的影响。对于 20 nm 栅极长度,观察到的 SS、DIBL、ION/IOFF(电流开关比)和 VTh 分别为 67.94 mV/dec、34.32 mV/V、108 和 0.32 V。fmax 被确定在太赫兹范围内,早期电压约为 6.12V。此外,还通过在 250 K-450 K 范围内改变温度研究了温度的影响,并使用 Visual TCAD 对器件进行了分析和虚拟建模。此外,还设计了 p 沟道晶体管和 n 沟道配置,以研究基于 CMOS 电路的器件性能。逆变器电路的噪声裕度和平均延迟分别为 0.37 V 和 36.7 ps。
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引用次数: 0
Improved Ga2O3 films on variously oriented Si substrates with Al2O3 or HfO2 buffer layer via atomic layer deposition 通过原子层沉积在带有 Al2O3 或 HfO2 缓冲层的不同取向硅基底上制备改良型 Ga2O3 薄膜
IF 2.7 Q2 PHYSICS, CONDENSED MATTER Pub Date : 2024-06-25 DOI: 10.1016/j.micrna.2024.207925
Xiangtai Liu, Jiayang Wang, Zhitian Xu, Shaoqing Wang, Yifan Jia, Qin Lu, Zhan Wang, Yunhe Guan, Lijun Li, Haifeng Chen

Ga2O3 is an ultrawide-band-gap semiconductor with excellent properties and promising applications in the electronic and optoelectronics. For acting as the substrate for heteroepitaxial Ga2O3 films, Si has the advantages of wafer-level size, cheap price and nice compatibility whereas also perform the disadvantage of large thermal mismatch. In this paper, the apparent flower-like defects are exhibited on the macroscopic surfaces of annealed Ga2O3 films deposited on (100), (110) and (111) oriented Si substrates by atomic layer deposition (ALD) method. The reason is ascribed to the different thermal expansion coefficients between Ga2O3 and Si induced compressive and tensile stresses. The Al2O3 or HfO2 buffer layer intercalated between Ga2O3 films and Si substrates via successive ALD process suppress the flower-like defects effectively while the surface roughnesses are low to be 1.290 nm and 2.393 nm, respectively. XRD spectra demonstrate that buffer layer indeed relieves the stress of Ga2O3 films on Si substrates while the amorphous Al2O3 has better influence than the polycrystalline HfO2. The results are helpful to the improvement of growth quality and device property of Ga2O3.

Ga2O3 是一种超宽带隙半导体,具有优异的性能,在电子和光电子领域有着广阔的应用前景。硅作为异质外延 Ga2O3 薄膜的衬底,具有晶圆级尺寸、价格便宜、兼容性好等优点,但也存在热失配大的缺点。本文采用原子层沉积(ALD)方法,在(100)、(110)和(111)取向硅衬底上沉积的退火 Ga2O3 薄膜的宏观表面出现了明显的花状缺陷。其原因是 Ga2O3 和硅之间不同的热膨胀系数引起了压应力和拉应力。通过连续的 ALD 工艺,在 Ga2O3 薄膜和硅基底之间夹杂的 Al2O3 或 HfO2 缓冲层有效地抑制了花状缺陷,而表面粗糙度分别低至 1.290 nm 和 2.393 nm。XRD 光谱表明,缓冲层确实缓解了硅衬底上 Ga2O3 薄膜的应力,而非晶 Al2O3 比多晶 HfO2 有更好的影响。这些结果有助于提高 Ga2O3 的生长质量和器件性能。
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引用次数: 0
High quality factor and unity circular dichroism enabled by dielectric-Weyl semimetal-dielectric stack 介电-韦尔半金属-介电叠层实现高品质因数和统一圆二色性
IF 2.7 Q2 PHYSICS, CONDENSED MATTER Pub Date : 2024-06-21 DOI: 10.1016/j.micrna.2024.207916
Ye Yang , Sicheng Xu , Liming Qian , Gaige Zheng

A mid-infrared (mid-IR) chiral absorber based on multilayer films of silicon (Si)/Weyl semimetal (WSM)/Si is proposed and numerically studied. The proposal exhibits high quality factor circular dichroism (CD) with different absorptance properties for right-hand circular polarization (RCP) and left-hand circular polarization (LCP) light. The absorption characteristics have been explored with the generalized 4 × 4 transfer matrix algorithm, and the effects of structural parameters on the circularly polarized (CP) absorptance are systematically investigated. The circular polarization efficiency (η) and CD are defined as crucial parameters for quantifying the chirality response. The results prove that the chiral absorber exhibits extraordinary efficiencies of 1 and 0 for LCP and RCP light at a wavelength of 11.5 μm, respectively. Thus a maximum CD in absorption of unity with a resonant quality factor (Q-factor) of 295 can be obtained. The performance of dual-band chiral responses can be engineered via the thickness of each layer. Moreover, it is identified that the design results in angle-independent performance, which is essential trait for an efficient chiral absorber.

本文提出了一种基于硅(Si)/韦尔半金属(WSM)/硅多层薄膜的中红外(mid-IR)手性吸收器,并对其进行了数值研究。该方案对右旋圆偏振光(RCP)和左旋圆偏振光(LCP)具有不同的吸收特性,表现出高品质因数圆二色性(CD)。利用广义 4 × 4 转移矩阵算法探索了吸收特性,并系统地研究了结构参数对圆偏振(CP)吸收率的影响。圆偏振效率 (η) 和 CD 被定义为量化手性响应的关键参数。结果证明,在 11.5 μm 波长处,手性吸收器对 LCP 和 RCP 光的效率分别为 1 和 0。因此,吸收的最大 CD 值为 1,谐振品质因数(Q 因子)为 295。双波段手性响应的性能可以通过各层的厚度来设计。此外,该设计还具有与角度无关的性能,而这正是高效手性吸收器的基本特征。
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引用次数: 0
Adsorption mechanisms of heavy metal atoms As, Pb, and Zn on thermally activated palygorskite Si–O/Mg–O (200) surfaces: A first-principles calculations 重金属原子 As、Pb 和 Zn 在热活化堇青石 Si-O/Mg-O (200) 表面上的吸附机理:第一原理计算
IF 2.7 Q2 PHYSICS, CONDENSED MATTER Pub Date : 2024-06-21 DOI: 10.1016/j.micrna.2024.207917
Jian Zhao , Li-Min Zheng , Wei Gao , Yu-Xiong Dong , Ya-Jing Zhao , Man-Chao He

Heavy metal pollution on air, water, and soil is an issue of increasing global concern. Adsorption is widely recognized as one of the most effective methods for removing heavy metal pollution. The adsorption mechanisms of As (Arsenic), Pb (Lead), and Zn (Zinc) atoms on thermally activated palygorskite Si–O (200) and Mg–O (200) surfaces were investigated using first-principles calculations based on DFT. The coverage dependence of the adsorption configurations and energies on the most stable adsorption sites was also analyzed. The bridge site was found to be the most stable adsorption site for As and Pb on the Si–O (200) surface, while the adsorption energy of Zn was < 0.1 eV on the surface. The adsorption capacity order of the surface was As > Pb ≫ Zn. On the Mg–O (200) surface, the hollow site was the most stable site for three heavy metal atoms. The adsorption energies of them gradually decreased with increasing coverage, thus indicating the lower stability of surface adsorption due to the repulsion of neighboring heavy metal atoms. The adsorption capacity of the Mg–O (200) surface followed the order of As > Pb > Zn. Further exploration was performed on the changes in structure and electronic properties within the adsorption process by studying the lattice relaxation, Bader charge, and electronic density of states (DOS) of the thermally activated palygorskite (200)/heavy metal atoms system.

空气、水和土壤中的重金属污染是全球日益关注的问题。吸附被公认为是去除重金属污染最有效的方法之一。本文采用基于 DFT 的第一性原理计算,研究了 As(砷)、Pb(铅)和 Zn(锌)原子在热激活的堇青石 Si-O (200) 和 Mg-O (200) 表面上的吸附机理。此外,还分析了最稳定吸附位点的吸附构型和能量的覆盖依赖性。结果发现,桥位点是 As 和 Pb 在 Si-O (200) 表面上最稳定的吸附位点,而 Zn 在该表面上的吸附能小于 0.1 eV。表面的吸附容量顺序为 As > Pb ≫ Zn。在 Mg-O (200) 表面,空心位点是三种重金属原子最稳定的位点。随着覆盖率的增加,它们的吸附能逐渐降低,这表明由于相邻重金属原子的排斥作用,表面吸附的稳定性较低。Mg-O (200) 表面的吸附容量依次为 As > Pb > Zn。通过研究热活化钙钛矿(200)/重金属原子体系的晶格弛豫、Bader 电荷和电子状态密度(DOS),进一步探讨了吸附过程中结构和电子特性的变化。
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引用次数: 0
GaN/Sc2CF2 heterostructure photodetector with exceptional polarization sensitivity 具有超强偏振灵敏度的氮化镓/Sc2CF2 异质结构光探测器
IF 2.7 Q2 PHYSICS, CONDENSED MATTER Pub Date : 2024-06-21 DOI: 10.1016/j.micrna.2024.207922
Zhen Cui , Guoqing Zhang , Shuang Zhang , Lu Wang

This paper employs first-principles methods to compute the stability, electrical properties, and optical properties of the GaN/Sc2CF2 heterostructure and investigates its photoelectric effect by constructing a photodetector device. The GaN/Sc2CF2 heterostructure has been found to be an indirect bandgap semiconductor with a bandgap value of 1.836 eV, and its substantial stability has been determined through phonon spectrum and molecular dynamics calculations. A charge transfer occurs in the GaN/Sc2CF2 heterostructure, resulting in the formation of an internal electric field directed from the Sc2CF2 layer to the GaN layer. Compared to single-layer GaN and Sc2CF2, the GaN/Sc2CF2 heterostructure has a wider absorption spectrum and enhanced light absorption in the visible light range. For the GaN/Sc2CF2 photodetector, it exhibits high photocurrent and extinction ratio, demonstrating favorable photoresponse characteristics, and it is more sensitive to changes in the polarization angle along the armchair direction. This research provides theoretical basis and research ideas for the photogalvanic detection capability of GaN/Sc2CF2 van der Waals heterostructures, offering a promising candidate material for photodetectors.

本文采用第一原理方法计算了 GaN/Sc2CF2 异质结构的稳定性、电学性质和光学性质,并通过构建光电探测器件研究了其光电效应。研究发现 GaN/Sc2CF2 异质结构是一种间接带隙半导体,其带隙值为 1.836 eV,并通过声子谱和分子动力学计算确定了它的实质稳定性。GaN/Sc2CF2 异质结构中会发生电荷转移,从而形成从 Sc2CF2 层指向 GaN 层的内部电场。与单层 GaN 和 Sc2CF2 相比,GaN/Sc2CF2 异质结构的吸收光谱更宽,在可见光范围内的光吸收能力更强。对于 GaN/Sc2CF2 光电探测器来说,它具有很高的光电流和消光比,表现出良好的光响应特性,而且对沿扶手方向的偏振角变化更为敏感。该研究为 GaN/Sc2CF2 范德华异质结构的光电探测能力提供了理论基础和研究思路,为光电探测器提供了一种前景广阔的候选材料。
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引用次数: 0
Facile synthesis of porous Au-decorated SnO2 microflowers with abundant oxygen vacancies for trace VOCs detection 轻松合成具有丰富氧空位的多孔金装饰二氧化锡微流子,用于痕量挥发性有机化合物检测
IF 2.7 Q2 PHYSICS, CONDENSED MATTER Pub Date : 2024-06-20 DOI: 10.1016/j.micrna.2024.207921
Haibo Ren , Hui Pan , Ge Song , Jiarui Huang , Sang Woo Joo

Hierarchical Au-decorated SnO2 (Au@SnO2) microflowers with a porous structure were successfully synthesized. The preparation process involves in a hydrothermal method, calcination treatment, as well as modification. The hierarchical structure consisted of a large number of porous, uniform nanosheets. Excellent gas-sensing performances were demonstrated by the gas sensors fabricated using Au@SnO2 microflowers, for detecting volatile organic compounds (VOCs). In particular, for the accurate and fast detection of formaldehyde, the 2%Au-decorated SnO2 microflowers sensors showed a strong sensing response (76.5) for formaldehyde (100 ppm) at 140 °C, approximately three times higher than that (28.2) observed for the pure porous SnO2 microflowers. The response and recovery times (10 s/16 s) were shorter than those (12 s/25 s) of the pure SnO2, respectively. The detection limit for the 2%Au@SnO2 sensor was 19.03 ppb. The sensing mechanism of Au@SnO2 sensors was also investigated. Favorable porous 3-dimensional structure, high catalytic activity, and electron sensitization effect of Au nanoparticles (NPs) improved the gas-sensing performance. Furthermore, the catalytic activity of Au NPs was maximized due to their uniform distribution on the surface of each porous SnO2 nanosheet. The Au-decorated SnO2 microflowers sensors have great potential for the accurate, fast, and highly sensitive response detection of formaldehyde gas.

成功合成了具有多孔结构的分层金装饰二氧化锡(Au@SnO2)微流体。制备过程包括水热法、煅烧处理和改性。这种分层结构由大量多孔、均匀的纳米片组成。利用 Au@SnO2 微流体制作的气体传感器具有优异的气体传感性能,可用于检测挥发性有机化合物(VOC)。特别是在准确而快速地检测甲醛方面,2%金装饰的二氧化锡微流体传感器在140 °C时对甲醛(100 ppm)显示出很强的传感响应(76.5),比纯多孔二氧化锡微流体的传感响应(28.2)高出约三倍。响应时间和恢复时间(10 秒/16 秒)分别比纯二氧化锡的响应时间和恢复时间(12 秒/25 秒)短。2%Au@SnO2 传感器的检测限为 19.03 ppb。此外,还研究了 Au@SnO2 传感器的传感机制。金纳米颗粒(NPs)的多孔三维结构、高催化活性和电子敏化效应提高了气体传感性能。此外,由于金纳米粒子均匀地分布在每个多孔二氧化锡纳米片的表面,它们的催化活性得到了最大程度的发挥。金装饰的二氧化锡微流传感器在准确、快速、高灵敏度地检测甲醛气体方面具有巨大潜力。
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引用次数: 0
Iron nanowire/carbon microsphere composite flexible fabric strain sensor for human motion monitoring 用于人体运动监测的铁纳米线/碳微球复合柔性织物应变传感器
IF 2.7 Q2 PHYSICS, CONDENSED MATTER Pub Date : 2024-06-20 DOI: 10.1016/j.micrna.2024.207920
Xinya Zeng , Yingang Gui , Jiarui Yang , Gongyu Jin , Xueru Wang , Hua Huang

People pay more and more attention to sports and health, especially the goal of sports recovery and scientific sports is more and more clear. In order to avoid human injury caused by unreasonable sports, it is necessary to carry out real-time detection of human motion state. In this paper, the motion state of human body was taken as the test object, a flexible strain sensitive material combining iron nanowires and carbon microspheres was proposed, and polyester fabric was introduced as the sensor substrate to construct a sandwich structure flexible fabric strain sensor. Then a mechanical test platform was built to carry out mechanical property testing and practical application verification research. The mechanical test results show that the iron nanowires/carbon microspheres flexible fabric strain sensor has good linearity, the response time is 42 ms, and the hysteresis error is approximately 8.7 %. Finally, the flexible fabric strain sensor is fixed on the part of the human body that needs to be detected, and the electrical signal curve of the response is output by the electrochemical workstation. Through the analysis of the response curve, it can be seen that the iron nanowires/carbon microspheres flexible fabric strain sensor prepared in this paper has great potential in human movement health monitoring.

人们对运动和健康越来越重视,尤其是运动康复和科学运动的目标越来越明确。为了避免不合理运动对人体造成伤害,有必要对人体运动状态进行实时检测。本文以人体运动状态为测试对象,提出了一种铁纳米线与碳微球相结合的柔性应变敏感材料,并引入涤纶织物作为传感器基底,构建了一种三明治结构的柔性织物应变传感器。然后搭建了力学测试平台,开展力学性能测试和实际应用验证研究。力学测试结果表明,铁纳米线/碳微球柔性织物应变传感器具有良好的线性度,响应时间为 42 ms,滞后误差约为 8.7 %。最后,将柔性织物应变传感器固定在人体需要检测的部位,由电化学工作站输出响应的电信号曲线。通过对响应曲线的分析,可以看出本文制备的铁纳米线/碳微球柔性织物应变传感器在人体运动健康监测方面具有很大的潜力。
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引用次数: 0
AlN/GaN Superlattice band structure calculation Using Empirical Tight Binding Model 利用经验紧密结合模型计算氮化铝/氮化镓超晶格带结构
IF 2.7 Q2 PHYSICS, CONDENSED MATTER Pub Date : 2024-06-20 DOI: 10.1016/j.micrna.2024.207919
Saeid Sarkhoshan, Mohammad Azim Karami

AlN/GaN superlattices are studied using the empirical tight-binding method (ETBM) with sp3 approximation. The model includes first-nearest-neighbor orbital interactions and accounts for the strain effect by modifying the ETBM parameters based on variations in bond lengths and angles. According to the authors knowledge, this study marks the first application of ETBM to determine the full band structure of AlN/GaN superlattices. On average, the ETBM band gaps resulting from this work are 7.48 % closer to the experimental data in comparison with Kronig-Penney outputs. In addition to the high accuracy of the model, the presented model is easier to implement compared to the density functional theory model.

使用经验紧密结合法 (ETBM) 和 sp3 近似值对 AlN/GaN 超晶格进行了研究。该模型包括第一近邻轨道相互作用,并根据键长和键角的变化修改 ETBM 参数,以考虑应变效应。据作者所知,这项研究标志着首次应用 ETBM 确定 AlN/GaN 超晶格的完整带结构。与 Kronig-Penney 输出相比,这项工作得出的 ETBM 带隙平均与实验数据接近 7.48%。与密度泛函理论模型相比,该模型除了精度高之外,还更容易实现。
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Micro and Nanostructures
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