Pub Date : 2026-02-01Epub Date: 2025-11-21DOI: 10.1016/j.micrna.2025.208479
Jacob Wekalao , Zaid Ahmed Shamsan , Trupti Kamani , Shobhit K. Patel
Precise detection and continuous monitoring of glucose concentrations in aqueous solutions are essential across biomedical, food processing, and pharmaceutical industries. The research gives an in-depth analysis of a metasurface-based glucose sensor utilizing COMSOL Multiphysics software. The proposed sensor architecture incorporates a hybrid metasurface combining graphene, silver, and gold to achieve enhanced sensing capabilities. Numerical simulations demonstrate that the sensor exhibits a sensitivity of 559.441 GHzRIU−1, a detection limit of 0.293 RIU, and a Figure of Merit (FOM) of 0.486 RIU−1. To augment the sensor's predictive capabilities, a decision tree regression algorithm is implemented for absorption value estimation. The machine learning model demonstrates R2 values ranging from 97 % to 100 % across all test cases, indicating robust correlation between predicted and experimental absorption values. These results suggest that the integration of metasurface design principles with machine learning approaches offers promising potential for high-performance glucose sensing applications.
{"title":"Smart graphene metasurface biosensor: Machine learning-assisted optimization for glucose detection","authors":"Jacob Wekalao , Zaid Ahmed Shamsan , Trupti Kamani , Shobhit K. Patel","doi":"10.1016/j.micrna.2025.208479","DOIUrl":"10.1016/j.micrna.2025.208479","url":null,"abstract":"<div><div>Precise detection and continuous monitoring of glucose concentrations in aqueous solutions are essential across biomedical, food processing, and pharmaceutical industries. The research gives an in-depth analysis of a metasurface-based glucose sensor utilizing COMSOL Multiphysics software. The proposed sensor architecture incorporates a hybrid metasurface combining graphene, silver, and gold to achieve enhanced sensing capabilities. Numerical simulations demonstrate that the sensor exhibits a sensitivity of 559.441 GHzRIU<sup>−1</sup>, a detection limit of 0.293 RIU, and a Figure of Merit (FOM) of 0.486 RIU<sup>−1</sup>. To augment the sensor's predictive capabilities, a decision tree regression algorithm is implemented for absorption value estimation. The machine learning model demonstrates R<sup>2</sup> values ranging from 97 % to 100 % across all test cases, indicating robust correlation between predicted and experimental absorption values. These results suggest that the integration of metasurface design principles with machine learning approaches offers promising potential for high-performance glucose sensing applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"210 ","pages":"Article 208479"},"PeriodicalIF":3.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145624433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-11-21DOI: 10.1016/j.micrna.2025.208467
A. Daniszewska , K. Żerańska , J. Jamroz , K. Filak-Mędoń , M. Maciałowicz , M. Ojrzyńska , M. Zdrojek
This study presents a sustainable, safe, and controlled method for the scalable production of graphene nanoplatelets (GNPs) using high-pressure homogenization (HPH) in an eco-friendly and human-safe solvent system. The process enables efficient exfoliation and progressive homogenization of natural graphite without requiring aggressive chemical treatments, toxic reagents, or extensive centrifugation. Unlike many conventional approaches, the method ensures nearly 100% utilization of input material, eliminating yield losses and enabling direct application of the entire product. The resulting GNPs exhibit high structural uniformity and quality, confirmed through comprehensive characterization techniques including Raman spectroscopy, X-ray diffraction, atomic force microscopy, and UV–Vis spectroscopy, supported by robust statistical analysis. Process parameters can be optimized to tailor the properties of the GNPs for specific applications. The produced GNPs were implemented in fabricating flexible thin films exhibiting sheet resistance down to 0.1 kΩ/sq and electromagnetic interference (EMI) shielding effectiveness close to 10 dB (for 27 μm thick film). These properties highlight the method's potential for graphene-based materials in flexible electronics, coatings, and EMI shielding applications, in line with circular economy principles such as the 5R strategy.
本研究提出了一种可持续、安全、可控的方法，利用高压均质（HPH）在生态友好且对人体安全的溶剂系统中大规模生产石墨烯纳米片（GNPs）。该工艺能够有效地剥离和逐渐均质天然石墨，而不需要积极的化学处理，有毒试剂，或广泛的离心。与许多传统方法不同，该方法确保了几乎100%的投入材料利用率，消除了产量损失，并使整个产品能够直接应用。通过拉曼光谱、x射线衍射、原子力显微镜和紫外可见光谱等综合表征技术，以及稳健的统计分析，证实了所得GNPs具有较高的结构均匀性和质量。可以优化工艺参数，以定制GNPs的特定应用特性。制备的GNPs可用于制造柔性薄膜，其片电阻低至0.1 kΩ/sq，电磁干扰（EMI）屏蔽效能接近10 dB （27 μm厚薄膜）。这些特性突出了该方法在柔性电子、涂料和EMI屏蔽应用中石墨烯基材料的潜力，符合循环经济原则，如5R战略。
{"title":"High-pressure homogenization of graphene nanoplatelets for flexible thin film applications","authors":"A. Daniszewska , K. Żerańska , J. Jamroz , K. Filak-Mędoń , M. Maciałowicz , M. Ojrzyńska , M. Zdrojek","doi":"10.1016/j.micrna.2025.208467","DOIUrl":"10.1016/j.micrna.2025.208467","url":null,"abstract":"<div><div>This study presents a sustainable, safe, and controlled method for the scalable production of graphene nanoplatelets (GNPs) using high-pressure homogenization (HPH) in an eco-friendly and human-safe solvent system. The process enables efficient exfoliation and progressive homogenization of natural graphite without requiring aggressive chemical treatments, toxic reagents, or extensive centrifugation. Unlike many conventional approaches, the method ensures nearly 100% utilization of input material, eliminating yield losses and enabling direct application of the entire product. The resulting GNPs exhibit high structural uniformity and quality, confirmed through comprehensive characterization techniques including Raman spectroscopy, X-ray diffraction, atomic force microscopy, and UV–Vis spectroscopy, supported by robust statistical analysis. Process parameters can be optimized to tailor the properties of the GNPs for specific applications. The produced GNPs were implemented in fabricating flexible thin films exhibiting sheet resistance down to 0.1 kΩ/sq and electromagnetic interference (EMI) shielding effectiveness close to 10 dB (for 27 μm thick film). These properties highlight the method's potential for graphene-based materials in flexible electronics, coatings, and EMI shielding applications, in line with circular economy principles such as the 5R strategy.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"210 ","pages":"Article 208467"},"PeriodicalIF":3.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145624445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-11-19DOI: 10.1016/j.micrna.2025.208475
Yang Zhang , Jingjing Wang , Ziyu Wan , Song Guo , Weibin Chen , Haiyang Zhang , Chaorong Li , Hualin Ding
The widespread application of ZnO-based surface-enhanced Raman scattering (SERS) substrates is limited by their inherently low sensitivity and non-uniform signal distribution, necessitating effective modification strategies such as elemental doping and heterojunction construction. Herein, a high-performance SERS substrate composed of Mg2+-doped ZnO micro/nanostructures decorated with Ag nanoparticles (n%Mg–ZnO/Ag MNSs) is designed and synthesized. Through defect engineering and structural modulation, the proposed substrate synergistically combines semiconductor defect-mediated chemical enhancement with Ag nanoparticle-induced electromagnetic enhancement. The optimized 5%Mg–ZnO/Ag MNSs substrate with a Mg2+ doping ratio of 0.05 demonstrates excellent SERS activity, exhibiting a 2.2-fold enhancement in signal intensity compared to the undoped ZnO/Ag system and a 31.4-fold increase relative to Ag nanoparticles. This substrate enables ultrasensitive detection of rhodamine 6G with a detection limit as low as 10−10 M, high signal reproducibility (RSD = 4.01%), and a broad linear response (R2 = 0.997) over a concentration range of 10−6 to 10−10 M. These results highlight the synergistic effect between defect engineering and plasmonic enhancement in semiconductor–metal hybrid systems, providing a promising approach for the development of reliable and quantitative SERS platforms for trace-level analyte detection.
{"title":"Doping engineering in ZnO/Ag composite micro/nanostructures for enhanced SERS performance","authors":"Yang Zhang , Jingjing Wang , Ziyu Wan , Song Guo , Weibin Chen , Haiyang Zhang , Chaorong Li , Hualin Ding","doi":"10.1016/j.micrna.2025.208475","DOIUrl":"10.1016/j.micrna.2025.208475","url":null,"abstract":"<div><div>The widespread application of ZnO-based surface-enhanced Raman scattering (SERS) substrates is limited by their inherently low sensitivity and non-uniform signal distribution, necessitating effective modification strategies such as elemental doping and heterojunction construction. Herein, a high-performance SERS substrate composed of Mg<sup>2+</sup>-doped ZnO micro/nanostructures decorated with Ag nanoparticles (n%Mg–ZnO/Ag MNSs) is designed and synthesized. Through defect engineering and structural modulation, the proposed substrate synergistically combines semiconductor defect-mediated chemical enhancement with Ag nanoparticle-induced electromagnetic enhancement. The optimized 5%Mg–ZnO/Ag MNSs substrate with a Mg<sup>2+</sup> doping ratio of 0.05 demonstrates excellent SERS activity, exhibiting a 2.2-fold enhancement in signal intensity compared to the undoped ZnO/Ag system and a 31.4-fold increase relative to Ag nanoparticles. This substrate enables ultrasensitive detection of rhodamine 6G with a detection limit as low as 10<sup>−10</sup> M, high signal reproducibility (RSD = 4.01%), and a broad linear response (R<sup>2</sup> = 0.997) over a concentration range of 10<sup>−6</sup> to 10<sup>−10</sup> M. These results highlight the synergistic effect between defect engineering and plasmonic enhancement in semiconductor–metal hybrid systems, providing a promising approach for the development of reliable and quantitative SERS platforms for trace-level analyte detection.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"210 ","pages":"Article 208475"},"PeriodicalIF":3.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145580219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bimetallic sulfides have emerged as highly efficient photocatalysts for environmental remediation owing to their narrow band gaps, enhanced charge transport and superior stability compared with single-metal sulfides. The synergistic interaction of two metal cations enables tunable band structures, abundant active sites and improved light-harvesting ability. When coupled into heterojunction architectures, these materials exhibit accelerated charge separation, suppressed electron–hole recombination and remarkable photocatalytic activity under visible light. Recent advancements have demonstrated precise control over morphology, interfacial connection and band alignment through diverse synthetic strategies, for example, hydrothermal, solvothermal, co-precipitation, ultrasonication and in-situ growth approaches, leading to significant improvements in the degradation of antibiotics and other persistent pollutants. This review provides a critical overview of progress in the design of bimetallic sulfide heterojunctions, their photocatalytic mechanisms and their applications in wastewater treatment. In addition, the challenges of photocorrosion, secondary pollution, scalability and lack of real-water testing are highlighted. Finally, future opportunities are outlined to guide the development of robust bimetallic sulfide heterojunctions for practical and sustainable environmental remediation.
{"title":"Current advancements in bimetallic sulfides based heterojunctions towards photocatalytic environmental remediation","authors":"Sahil Rana , Pooja Dhiman , Akshay Verma , Tongtong Wang , Gaurav Sharma","doi":"10.1016/j.micrna.2025.208461","DOIUrl":"10.1016/j.micrna.2025.208461","url":null,"abstract":"<div><div>Bimetallic sulfides have emerged as highly efficient photocatalysts for environmental remediation owing to their narrow band gaps, enhanced charge transport and superior stability compared with single-metal sulfides. The synergistic interaction of two metal cations enables tunable band structures, abundant active sites and improved light-harvesting ability. When coupled into heterojunction architectures, these materials exhibit accelerated charge separation, suppressed electron–hole recombination and remarkable photocatalytic activity under visible light. Recent advancements have demonstrated precise control over morphology, interfacial connection and band alignment through diverse synthetic strategies, for example, hydrothermal, solvothermal, co-precipitation, ultrasonication and in-situ growth approaches, leading to significant improvements in the degradation of antibiotics and other persistent pollutants. This review provides a critical overview of progress in the design of bimetallic sulfide heterojunctions, their photocatalytic mechanisms and their applications in wastewater treatment. In addition, the challenges of photocorrosion, secondary pollution, scalability and lack of real-water testing are highlighted. Finally, future opportunities are outlined to guide the development of robust bimetallic sulfide heterojunctions for practical and sustainable environmental remediation.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"210 ","pages":"Article 208461"},"PeriodicalIF":3.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145580223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-11-29DOI: 10.1016/j.micrna.2025.208505
Olamide A. Akintayo , Maymounah N. Alharthi , Olubusayo F. Oladejo , Muhydeen A. Ibraheem , Maruf M. Popoola , Walilou Buremoh , Saheed A. Adewinbi , Bidini A. Taleatu
A Co3O4/V2O5 bilayer heterostructure was successfully fabricated on ITO/glass substrates via sequential electrodeposition and comprehensively evaluated for its structural, vibrational, and optoelectronic properties toward ultraviolet (UV) photodetection. SEM analysis revealed a morphological transformation from the granular V2O5 and densely packed Co3O4 textures to a uniform, compact nanostructured network in the Co3O4/V2O5 heterostructure, indicating enhanced interfacial adhesion and surface coverage. Elemental mapping confirmed a homogeneous distribution of V, Co, and O elements without phase segregation. XRD patterns verified the coexistence of orthorhombic V2O5 and cubic Co3O4 phases, exhibiting interfacial strain-induced peak shifts, suppression of the (301) plane of V2O5, and broadened diffraction peaks, signifying improved crystalline coherence and structural coupling. Raman spectra further validated the phase purity and distinct vibrational features of both oxides. UV–visible absorption spectra displayed modulated band transitions, while Tauc's plots revealed tunable optical bandgaps ranging from 2.35 to 2.59 eV, depending on material composition and heterostructure formation. The fabricated UV photodetector demonstrated excellent photoresponse characteristics, including high responsivity and strong detectivity, attributed to efficient charge separation and transport at the heterostructure Co3O4/V2O5 interface. These findings establish the Co3O4/V2O5 heterostructure as a promising and scalable oxide-based platform for high-performance UV photodetectors and related optoelectronic applications.
{"title":"Electrochemical preparation of Co3O4/V2O5 nanostructured bilayer on ITO/glass for high-response UV photodetector: Structural evolution and optoelectronic characterization","authors":"Olamide A. Akintayo , Maymounah N. Alharthi , Olubusayo F. Oladejo , Muhydeen A. Ibraheem , Maruf M. Popoola , Walilou Buremoh , Saheed A. Adewinbi , Bidini A. Taleatu","doi":"10.1016/j.micrna.2025.208505","DOIUrl":"10.1016/j.micrna.2025.208505","url":null,"abstract":"<div><div>A Co<sub>3</sub>O<sub>4</sub>/V<sub>2</sub>O<sub>5</sub> bilayer heterostructure was successfully fabricated on ITO/glass substrates via sequential electrodeposition and comprehensively evaluated for its structural, vibrational, and optoelectronic properties toward ultraviolet (UV) photodetection. SEM analysis revealed a morphological transformation from the granular V<sub>2</sub>O<sub>5</sub> and densely packed Co<sub>3</sub>O<sub>4</sub> textures to a uniform, compact nanostructured network in the Co<sub>3</sub>O<sub>4</sub>/V<sub>2</sub>O<sub>5</sub> heterostructure, indicating enhanced interfacial adhesion and surface coverage. Elemental mapping confirmed a homogeneous distribution of V, Co, and O elements without phase segregation. XRD patterns verified the coexistence of orthorhombic V<sub>2</sub>O<sub>5</sub> and cubic Co<sub>3</sub>O<sub>4</sub> phases, exhibiting interfacial strain-induced peak shifts, suppression of the (301) plane of V<sub>2</sub>O<sub>5</sub>, and broadened diffraction peaks, signifying improved crystalline coherence and structural coupling. Raman spectra further validated the phase purity and distinct vibrational features of both oxides. UV–visible absorption spectra displayed modulated band transitions, while Tauc's plots revealed tunable optical bandgaps ranging from 2.35 to 2.59 eV, depending on material composition and heterostructure formation. The fabricated UV photodetector demonstrated excellent photoresponse characteristics, including high responsivity and strong detectivity, attributed to efficient charge separation and transport at the heterostructure Co<sub>3</sub>O<sub>4</sub>/V<sub>2</sub>O<sub>5</sub> interface. These findings establish the Co<sub>3</sub>O<sub>4</sub>/V<sub>2</sub>O<sub>5</sub> heterostructure as a promising and scalable oxide-based platform for high-performance UV photodetectors and related optoelectronic applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"210 ","pages":"Article 208505"},"PeriodicalIF":3.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145694114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Despite the favorable material properties of tetrahedrite, thin-film solar cells based on it exhibit low efficiencies (<1.5 %) due to significant optical and recombination energy losses. In this work, the influence of these losses on the photovoltaic parameters of solar cells with n-CdS(ZnO, ZnMgO)/p-Cu12Sb4S13 heterojunctions and n-ITO front conductive contacts was analyzed. The n-ZnO window layer demonstrated superior spectral transparency (T = 93.3 %). Optical and recombination losses were found to decrease Jsc of such devices by 20–41 %. The optimized design of the n-ZnMgO/p-Cu12Sb4S13 solar cell (dZMO = 25 nm, dITO = 100 nm), with an acceptor concentration in the absorbing layer of Na = 1016 cm−3, achieved the highest values of Jsc (∼22.7 mA/cm2) and power conversion efficiency η (∼19.9 %), due to enhanced band alignment with the p-Cu12Sb4S13 layer and reduced recombination losses. Based on these findings, practical recommendations are provided for the fabrication of high-efficiency solar cells utilizing a Cu12Sb4S13 absorbing layer.
{"title":"Impact of optical and recombination losses on the photovoltaic parameters of thin-film solar cells with n-CdS(ZnO, ZnMgO)/p-Cu12Sb4S13 heterojunctions","authors":"Artem Zabuha , Oleksandr Dobrozhan , Dmytro Velykodnyi , Anatoliy Opanasyuk","doi":"10.1016/j.micrna.2025.208482","DOIUrl":"10.1016/j.micrna.2025.208482","url":null,"abstract":"<div><div>Despite the favorable material properties of tetrahedrite, thin-film solar cells based on it exhibit low efficiencies (<1.5 %) due to significant optical and recombination energy losses. In this work, the influence of these losses on the photovoltaic parameters of solar cells with <em>n</em>-CdS(ZnO, ZnMgO)/<em>p</em>-Cu<sub>12</sub>Sb<sub>4</sub>S<sub>13</sub> heterojunctions and <em>n</em>-ITO front conductive contacts was analyzed. The <em>n</em>-ZnO window layer demonstrated superior spectral transparency (<em>T</em> = 93.3 %). Optical and recombination losses were found to decrease <em>J</em><sub>sc</sub> of such devices by 20–41 %. The optimized design of the <em>n</em>-ZnMgO/<em>p</em>-Cu<sub>12</sub>Sb<sub>4</sub>S<sub>13</sub> solar cell (<em>d</em><sub>ZMO</sub> = 25 nm, <em>d</em><sub>ITO</sub> = 100 nm), with an acceptor concentration in the absorbing layer of <em>N</em><sub>a</sub> = 10<sup>16</sup> cm<sup>−3</sup>, achieved the highest values of <em>J</em><sub>sc</sub> (∼22.7 mA/cm<sup>2</sup>) and power conversion efficiency <em>η</em> (∼19.9 %), due to enhanced band alignment with the <em>p</em>-Cu<sub>12</sub>Sb<sub>4</sub>S<sub>13</sub> layer and reduced recombination losses. Based on these findings, practical recommendations are provided for the fabrication of high-efficiency solar cells utilizing a Cu<sub>12</sub>Sb<sub>4</sub>S<sub>13</sub> absorbing layer.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"210 ","pages":"Article 208482"},"PeriodicalIF":3.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145624434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-11-26DOI: 10.1016/j.micrna.2025.208489
Rendani J. Mudau , Allen T. Gordon , Yakubu Adekunle Alli , Zelalem Urgessa , Jaco Olivier , Adeniyi S. Ogunlaja
Designing photocatalysts that drive CO2 reduction with high selectivity toward multi-electron products remains a major challenge. Here, we report a novel heterojunction composed of Zn/Fe/O-doped CdS and TiO2 for CO2 photoreduction with the help of simulated sunlight. Cation doping strategically tunes the CdS band structure, introduces shallow trap states, and enhances light absorption. Advanced characterizations (HR-TEM, XPS, UV–Vis DRS, BET) confirm the formation of well-defined heterointerfaces, successful dopant incorporation, and defect states critical for charge transfer. The photocatalyst, (Zn, Fe, O)S/TiO2 (ZnFe2O4–CdS/TiO2) exhibited the highest activity, producing 5.7 μmol g−1·h−1 of CO and 6.0 μmol g−1·h−1 of CH3OH, which represents 1.8-fold and 1.7-fold increase in CO and CH3OH yield compared to CdS/TiO2 heterojunction, respectively. Photoluminescence analysis demonstrated that the enhanced performance of (Zn, Fe, O)S/TiO2 or (ZnFe2O4–CdS/TiO2) is attributed to improved photogenerated carrier separation from heterojunction construction. This work establishes a versatile strategy for dopant–defect cooperative engineering, offering a pathway toward solar-to-chemical energy conversion with unprecedented methanol selectivity.
{"title":"Construction of Zn/Fe co-doped CdS/TiO2 S-scheme heterojunction for enhanced photocatalytic CO2 reduction under visible light","authors":"Rendani J. Mudau , Allen T. Gordon , Yakubu Adekunle Alli , Zelalem Urgessa , Jaco Olivier , Adeniyi S. Ogunlaja","doi":"10.1016/j.micrna.2025.208489","DOIUrl":"10.1016/j.micrna.2025.208489","url":null,"abstract":"<div><div>Designing photocatalysts that drive CO<sub>2</sub> reduction with high selectivity toward multi-electron products remains a major challenge. Here, we report a novel heterojunction composed of Zn/Fe/O-doped CdS and TiO<sub>2</sub> for CO<sub>2</sub> photoreduction with the help of simulated sunlight. Cation doping strategically tunes the CdS band structure, introduces shallow trap states, and enhances light absorption. Advanced characterizations (HR-TEM, XPS, UV–Vis DRS, BET) confirm the formation of well-defined heterointerfaces, successful dopant incorporation, and defect states critical for charge transfer. The photocatalyst, (Zn, Fe, O)S/TiO<sub>2</sub> (ZnFe<sub>2</sub>O<sub>4</sub>–CdS/TiO<sub>2</sub>) exhibited the highest activity, producing 5.7 μmol g<sup>−1</sup>·h<sup>−1</sup> of CO and 6.0 μmol g<sup>−1</sup>·h<sup>−1</sup> of CH<sub>3</sub>OH, which represents 1.8-fold and 1.7-fold increase in CO and CH<sub>3</sub>OH yield compared to CdS/TiO<sub>2</sub> heterojunction, respectively. Photoluminescence analysis demonstrated that the enhanced performance of (Zn, Fe, O)S/TiO<sub>2</sub> or (ZnFe<sub>2</sub>O<sub>4</sub>–CdS/TiO<sub>2</sub>) is attributed to improved photogenerated carrier separation from heterojunction construction. This work establishes a versatile strategy for dopant–defect cooperative engineering, offering a pathway toward solar-to-chemical energy conversion with unprecedented methanol selectivity.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"210 ","pages":"Article 208489"},"PeriodicalIF":3.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145624438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-11-20DOI: 10.1016/j.micrna.2025.208477
Mudasir A. Khanday , Farooq A. Khanday
This work presents the design and demonstration of a novel Impact Ionization MOSFET (I-MOS) as a Leaky Integrate-and-Fire (LIF) neuron for neuromorphic computing applications. The device leverages the impact ionization phenomenon and employs InGaAs, a III-V compound semiconductor characterized by a low bandgap, high electron mobility, and reduced effective mass. These material properties facilitate sharp switching behavior at reduced breakdown voltages, which is essential for energy-efficient spiking. The proposed neuron achieves an energy consumption of 40.8 fJ per spike, the lowest energy consumption reported for I-MOS neurons in the literature. A detailed analysis of the spike frequency response as a function of input current, membrane capacitance, and duty cycle is carried out. The influence of device geometry and biasing conditions on the neuron's performance is also systematically examined. To validate the computational capability, a three-layer spiking neural network (SNN) based on the proposed neuron is implemented using Python, achieving a signal classification accuracy of 84.26 %. These results establish the sharp-switching InGaAs I-MOS neuron as a promising biomimetic building block for next-generation energy-efficient neuromorphic systems.
{"title":"Low-voltage I-MOS neuron with biomimetic switching dynamics for neuromorphic systems","authors":"Mudasir A. Khanday , Farooq A. Khanday","doi":"10.1016/j.micrna.2025.208477","DOIUrl":"10.1016/j.micrna.2025.208477","url":null,"abstract":"<div><div>This work presents the design and demonstration of a novel Impact Ionization MOSFET (I-MOS) as a Leaky Integrate-and-Fire (LIF) neuron for neuromorphic computing applications. The device leverages the impact ionization phenomenon and employs InGaAs, a III-V compound semiconductor characterized by a low bandgap, high electron mobility, and reduced effective mass. These material properties facilitate sharp switching behavior at reduced breakdown voltages, which is essential for energy-efficient spiking. The proposed neuron achieves an energy consumption of 40.8 fJ per spike, the lowest energy consumption reported for I-MOS neurons in the literature. A detailed analysis of the spike frequency response as a function of input current, membrane capacitance, and duty cycle is carried out. The influence of device geometry and biasing conditions on the neuron's performance is also systematically examined. To validate the computational capability, a three-layer spiking neural network (SNN) based on the proposed neuron is implemented using Python, achieving a signal classification accuracy of 84.26 %. These results establish the sharp-switching InGaAs I-MOS neuron as a promising biomimetic building block for next-generation energy-efficient neuromorphic systems.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"210 ","pages":"Article 208477"},"PeriodicalIF":3.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145624536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-11-19DOI: 10.1016/j.micrna.2025.208473
Man Li , Yifan Huang , Wei Xiao , Mingxiang Wang , Yeye Guo , Dongli Zhang , Huaisheng Wang , Chen Shen , Ding Gong
A novel doping-based source/drain extension structure is introduced in three-dimensional field-effect transistors (3-D FETs), namely silicon-on-insulator (SOI) FinFETs and gate-all-around (GAA) FETs. Detailed TCAD simulation including the quantum mechanical effects demonstrates that compared to conventional devices with lightly doped drain (LDD) extensions of the same footprint, the proposed devices exhibit superior suppression of short-channel effects (SCEs), with higher on-state current (Ion), switching ratio (ION/IOFF), lower subthreshold swing (SS), and drain-induced barrier lowering (DIBL) achieved. In terms of intrinsic gain (Av), the proposed FinFET achieves a peak gain of 27.5 dB, significantly higher than the 22.2 dB of the LDD counterpart. The proposed GAAFET reaches a maximum value of 28.5 dB, compared to 19.8 dB for the LDD GAAFET. Such performance advantages demonstrate the potential of the proposed devices in both digital and analog circuit applications. Fabrication process to form the GAAFETs with the novel source/drain extensions is also discussed based on the bottom-up approach.
{"title":"Performance enhancement in 3D transistors: A TCAD simulation-based study of FinFETs and GAAFETs with novel source-drain extensions","authors":"Man Li , Yifan Huang , Wei Xiao , Mingxiang Wang , Yeye Guo , Dongli Zhang , Huaisheng Wang , Chen Shen , Ding Gong","doi":"10.1016/j.micrna.2025.208473","DOIUrl":"10.1016/j.micrna.2025.208473","url":null,"abstract":"<div><div>A novel doping-based source/drain extension structure is introduced in three-dimensional field-effect transistors (3-D FETs), namely silicon-on-insulator (SOI) FinFETs and gate-all-around (GAA) FETs. Detailed TCAD simulation including the quantum mechanical effects demonstrates that compared to conventional devices with lightly doped drain (LDD) extensions of the same footprint, the proposed devices exhibit superior suppression of short-channel effects (SCEs), with higher on-state current (<em>I</em><sub>on</sub>), switching ratio (<em>I</em><sub>ON</sub>/<em>I</em><sub>OFF</sub>), lower subthreshold swing (SS), and drain-induced barrier lowering (DIBL) achieved. In terms of intrinsic gain (<em>A</em><sub>v</sub>), the proposed FinFET achieves a peak gain of 27.5 dB, significantly higher than the 22.2 dB of the LDD counterpart. The proposed GAAFET reaches a maximum value of 28.5 dB, compared to 19.8 dB for the LDD GAAFET. Such performance advantages demonstrate the potential of the proposed devices in both digital and analog circuit applications. Fabrication process to form the GAAFETs with the novel source/drain extensions is also discussed based on the bottom-up approach.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"210 ","pages":"Article 208473"},"PeriodicalIF":3.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145580221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-01Epub Date: 2025-12-01DOI: 10.1016/j.micrna.2025.208511
Changxu Liu, Jiadong Chang, Hongjun Ren, Jiaming Zhang, Wenzhuo Li, Qiyi Zhao, Lu Li
Heterojunctions of two-dimensional materials provide a new way for the development of flexible electronics because of the exceptional flexibility and high carrier mobility. In this paper, the elasticity, electronic structures and optical dielectric properties of heterojunctions composed of graphene and monolayer Janus MXY (M = Hf, Zr; X, YS, Se) are investigated systematically. The result indicates that heterojunctions show the potentials to outperform conventional materials in terms of mechanical stability, and efficient optical response. It is worth noting that the heterojunctions of graphene and ZrSSe have an excellent sunlight absorption up to 2.41 × 106 cm−1. The photon fluxes can reach up to 9.8 mA cm−2. After forming the heterojunctions with Janus materials, the bandgap of graphene significantly increases, reaching up to 0.3088 eV. Moreover, the electric conductivity, optical response and mechanical properties have been enhanced based on fabricating the heterojunctions. This study not only deepens the understanding of the electronic, optoelectronic and mechanical properties of heterojunctions of graphene and Janus materials, but also offers theoretical guidance for the development of optoelectronic devices based on Janus materials.
{"title":"Extraordinary flexibility and sunlight absorption of Janus heterojunctions MXY/graphene (M=Hf, Zr; X, YS, Se)","authors":"Changxu Liu, Jiadong Chang, Hongjun Ren, Jiaming Zhang, Wenzhuo Li, Qiyi Zhao, Lu Li","doi":"10.1016/j.micrna.2025.208511","DOIUrl":"10.1016/j.micrna.2025.208511","url":null,"abstract":"<div><div>Heterojunctions of two-dimensional materials provide a new way for the development of flexible electronics because of the exceptional flexibility and high carrier mobility. In this paper, the elasticity, electronic structures and optical dielectric properties of heterojunctions composed of graphene and monolayer Janus MXY (M = Hf, Zr; X, Y<img>S, Se) are investigated systematically. The result indicates that heterojunctions show the potentials to outperform conventional materials in terms of mechanical stability, and efficient optical response. It is worth noting that the heterojunctions of graphene and ZrSSe have an excellent sunlight absorption up to 2.41 × 10<sup>6</sup> cm<sup>−1</sup>. The photon fluxes can reach up to 9.8 mA cm<sup>−2</sup>. After forming the heterojunctions with Janus materials, the bandgap of graphene significantly increases, reaching up to 0.3088 eV. Moreover, the electric conductivity, optical response and mechanical properties have been enhanced based on fabricating the heterojunctions. This study not only deepens the understanding of the electronic, optoelectronic and mechanical properties of heterojunctions of graphene and Janus materials, but also offers theoretical guidance for the development of optoelectronic devices based on Janus materials.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"210 ","pages":"Article 208511"},"PeriodicalIF":3.0,"publicationDate":"2026-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145693971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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