Pub Date : 2024-07-26DOI: 10.1134/s1063739724600183
D. B. Murin, A. Yu. Grazhdyan, I. A. Chesnokov, I. A. Gogulev
Abstract
The influence of the addition of hydrogen on the electrophysical parameters and emission spectra of tetrafluoromethane under conditions of a direct current glow discharge is studied. It is established that the gas temperature changes nonlinearly with an increasing proportion of hydrogen in the plasma-forming mixture. The emission spectra of tetrafluoromethane plasma with hydrogen are obtained and analyzed. It is shown that plasma radiation is represented by atomic and molecular components, and the dependencies of the line radiation intensities on the external conditions of the discharge are determined by the excitation of emitting states during direct electron impacts.
{"title":"Influence of Hydrogen Additive on Electrophysical Parameters and Emission Spectra of Tetrafluoromethane Plasma","authors":"D. B. Murin, A. Yu. Grazhdyan, I. A. Chesnokov, I. A. Gogulev","doi":"10.1134/s1063739724600183","DOIUrl":"https://doi.org/10.1134/s1063739724600183","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The influence of the addition of hydrogen on the electrophysical parameters and emission spectra of tetrafluoromethane under conditions of a direct current glow discharge is studied. It is established that the gas temperature changes nonlinearly with an increasing proportion of hydrogen in the plasma-forming mixture. The emission spectra of tetrafluoromethane plasma with hydrogen are obtained and analyzed. It is shown that plasma radiation is represented by atomic and molecular components, and the dependencies of the line radiation intensities on the external conditions of the discharge are determined by the excitation of emitting states during direct electron impacts.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"38 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141777987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.1134/s1063739724600092
S. M. Asadov
Abstract
Density functional theory (DFT) using the generalized gradient approximation (GGA) made it possible to optimize the crystal structure, calculate the lattice parameters and band structure of ({text{TlM}}{{{text{S}}}_{2}}~)(M = Ga, In) semiconductor compounds with a monoclinic structure (space group (C2{text{/}}c), no. 15). DFT calculations of the structure of compounds were expanded using two exchange-correlation functionals GGA-PBE and GGA + (U) (U is the Coulomb parameter) with a value of (U - J) = 2.1 eV (effective interaction parameter). Thermal diffusion coefficients (({{D}_{alpha }})) of atoms of individual types (α), i.e. atoms of thallium, gallium, indium and sulfur near the melting point of the ({text{TlM}}{{{text{S}}}_{2}}) compound were calculated by the molecular dynamics (MD) method. The ({{D}_{alpha }}) values of ({text{TlM}}{{{text{S}}}_{2}}) atoms were obtained in the local neutrality approximation using the canonical (NVT) MD ensemble. The ({{D}_{alpha }}) values of the atoms were corrected to take into account the root-mean-square displacements of the atoms at a given time and temperature. The dependences ({{D}_{alpha }} = ~f(1{text{/}}T)) of ({text{TlM}}{{{text{S}}}_{2}}) atoms, described by the Arrhenius law, were constructed. The activation energy of atomic diffusion was calculated.
{"title":"Modeling the Diffusion of Atoms in Multicomponent Semiconductors in a Disordered State","authors":"S. M. Asadov","doi":"10.1134/s1063739724600092","DOIUrl":"https://doi.org/10.1134/s1063739724600092","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Density functional theory (DFT) using the generalized gradient approximation (GGA) made it possible to optimize the crystal structure, calculate the lattice parameters and band structure of <span>({text{TlM}}{{{text{S}}}_{2}}~)</span>(M = Ga, In) semiconductor compounds with a monoclinic structure (space group <span>(C2{text{/}}c)</span>, no. 15). DFT calculations of the structure of compounds were expanded using two exchange-correlation functionals GGA-PBE and GGA + <span>(U)</span> (<i>U</i> is the Coulomb parameter) with a value of <span>(U - J)</span> = 2.1 eV (effective interaction parameter). Thermal diffusion coefficients (<span>({{D}_{alpha }})</span>) of atoms of individual types (α), i.e. atoms of thallium, gallium, indium and sulfur near the melting point of the <span>({text{TlM}}{{{text{S}}}_{2}})</span> compound were calculated by the molecular dynamics (MD) method. The <span>({{D}_{alpha }})</span> values of <span>({text{TlM}}{{{text{S}}}_{2}})</span> atoms were obtained in the local neutrality approximation using the canonical <span>(NVT)</span> MD ensemble. The <span>({{D}_{alpha }})</span> values of the atoms were corrected to take into account the root-mean-square displacements of the atoms at a given time and temperature. The dependences <span>({{D}_{alpha }} = ~f(1{text{/}}T))</span> of <span>({text{TlM}}{{{text{S}}}_{2}})</span> atoms, described by the Arrhenius law, were constructed. The activation energy of atomic diffusion was calculated.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141256781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.1134/s1063739724600079
Sunil Kumar Ramanathula, B. Anuradha
Abstract
Through silicon via is the key technology for 3D-Integrated Circuits (3D-ICs) which could vertically stack homogeneous or heterogeneous dies with the high performance and density. To evaluate the electrical characteristics of TSV at high-frequency transmission, the skin effect and surface roughness effect are necessary to be considered. However, these effects would significantly result in TSV equivalent resistance under the high operating frequency. Thus, it is important to investigate the Graphene nanoribbon (GNR) TSV which less skin effect intrinsically. In this work, we analyze the advantage of GNR as TSV compared with conventional filler materials such as copper (Cu), SWCNT, MWCNT, MCB. Further, we also simulate the signal integrity analysis of GNR based TSV, the resistance of MLGNR for different TSV widths and propagation delay and crosstalk induced delay for different TSV heights by using HSPICE simulator. In summary, GNR could be a promising TSV filler material at the high speed future ICs based on our study.
{"title":"Performance Analysis of Graphene Nanoribbon Based through Silicon Vias for 3D-ICs","authors":"Sunil Kumar Ramanathula, B. Anuradha","doi":"10.1134/s1063739724600079","DOIUrl":"https://doi.org/10.1134/s1063739724600079","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Through silicon via is the key technology for 3D-Integrated Circuits (3D-ICs) which could vertically stack homogeneous or heterogeneous dies with the high performance and density. To evaluate the electrical characteristics of TSV at high-frequency transmission, the skin effect and surface roughness effect are necessary to be considered. However, these effects would significantly result in TSV equivalent resistance under the high operating frequency. Thus, it is important to investigate the Graphene nanoribbon (GNR) TSV which less skin effect intrinsically. In this work, we analyze the advantage of GNR as TSV compared with conventional filler materials such as copper (Cu), SWCNT, MWCNT, MCB. Further, we also simulate the signal integrity analysis of GNR based TSV, the resistance of MLGNR for different TSV widths and propagation delay and crosstalk induced delay for different TSV heights by using HSPICE simulator. In summary, GNR could be a promising TSV filler material at the high speed future ICs based on our study.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141256863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.1134/s1063739724600109
A. A. Lomov, B. M. Seredin, S. Yu. Martyushov, A. A. Tatarintsev, V. P. Popov, A. V. Malibashev
Abstract
The results of a study of the structural features and electrical properties of the end-to-end thermomigration (ThM) of the p-channels of Si(Al) in a silicon wafer are presented. Structural studies are carried out using X-ray methods of projection topography, diffraction reflection curves, and scanning electron microscopy (SEM). It is shown that the channel-matrix interface is coherent without the formation of misfit dislocations. The possibility is shown of using an array of the ThM of the p-channels of 15 elements for the formation of a monolithic photoelectric solar module in a Si(111)-based silicon wafer of p-channels 100 µm wide with walls in the plane (left( {1bar {1}0} right)). The monolithic solar module has a conversion efficiency of 13.1%, an open circuit voltage of 8.5 V, and a short circuit current density of 33 mA/cm2.
{"title":"Structural Features and Electrical Properties of Si(Al) Thermomigration Channels for High-Voltage Photoelectric Converters","authors":"A. A. Lomov, B. M. Seredin, S. Yu. Martyushov, A. A. Tatarintsev, V. P. Popov, A. V. Malibashev","doi":"10.1134/s1063739724600109","DOIUrl":"https://doi.org/10.1134/s1063739724600109","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The results of a study of the structural features and electrical properties of the end-to-end thermomigration (ThM) of the <i>p</i>-channels of Si(Al) in a silicon wafer are presented. Structural studies are carried out using X-ray methods of projection topography, diffraction reflection curves, and scanning electron microscopy (SEM). It is shown that the channel-matrix interface is coherent without the formation of misfit dislocations. The possibility is shown of using an array of the ThM of the <i>p</i>-channels of 15 elements for the formation of a monolithic photoelectric solar module in a Si(111)-based silicon wafer of <i>p</i>-channels 100 µm wide with walls in the plane <span>(left( {1bar {1}0} right))</span>. The monolithic solar module has a conversion efficiency of 13.1%, an open circuit voltage of 8.5 V, and a short circuit current density of 33 mA/cm<sup>2</sup>.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141256775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.1134/s1063739724700793
V. S. Klimin, A. Geldash, O. A. Ageev
Abstract
The presented work shows the formation and profiling of nanocrystalline LiNbO3 films obtained by pulsed laser deposition, as well as the influence of the laser pulse repetition rate on the electrical properties, morphology, and growth processes of granular films. The study revealed that the nucleation process in LiNbO3 films can be intentionally altered by increasing the laser pulse repetition rate. When the repetition rate was set to 4 Hz, the resulting film comprised local islands and clusters with a diameter of 118.1 ± 5.9 nm. On the other hand, nanocrystalline films grown at a repetition rate of 10 Hz exhibited a continuous granular structure with a grain diameter of 235 ± 11.75 nm. These findings have the potential to contribute to the advancement of environmentally friendly energy devices utilizing lead-free piezoelectric energy harvesters.
{"title":"Plasma Profiling of LiNbO3 Film for the Formation of Piezoelectric Energy Converters","authors":"V. S. Klimin, A. Geldash, O. A. Ageev","doi":"10.1134/s1063739724700793","DOIUrl":"https://doi.org/10.1134/s1063739724700793","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The presented work shows the formation and profiling of nanocrystalline LiNbO<sub>3</sub> films obtained by pulsed laser deposition, as well as the influence of the laser pulse repetition rate on the electrical properties, morphology, and growth processes of granular films. The study revealed that the nucleation process in LiNbO<sub>3</sub> films can be intentionally altered by increasing the laser pulse repetition rate. When the repetition rate was set to 4 Hz, the resulting film comprised local islands and clusters with a diameter of 118.1 ± 5.9 nm. On the other hand, nanocrystalline films grown at a repetition rate of 10 Hz exhibited a continuous granular structure with a grain diameter of 235 ± 11.75 nm. These findings have the potential to contribute to the advancement of environmentally friendly energy devices utilizing lead-free piezoelectric energy harvesters.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141256875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.1134/s1063739724600134
V. K. Bityukov, A. I. Lavrenov
Abstract
Mathematical models are the base for unified methods of calculating and designing radio-electronic devices. The developed limiting continuous mathematical model of a DC/DC converter built using the SEPIC topology allows us to estimate the range of changes in currents flowing through the windings of the inductors and voltages on the capacitor plates, as well as determine their maximum and minimum values for various converter parameters, such as the power switching frequency key, fill factor, element values, etc. The research results show that the phase coordinates of the mathematical model tend to the real values of the currents and voltages of the converter when the switching frequency of the power switch is more than 200 kHz. A correspondence was established between the calculated values of the ripple ranges and the results obtained during modeling (with changes in the duty cycle and switching frequency of the power switch).
{"title":"Ripple DC/DC Converter Built According to the SEPIC Topology","authors":"V. K. Bityukov, A. I. Lavrenov","doi":"10.1134/s1063739724600134","DOIUrl":"https://doi.org/10.1134/s1063739724600134","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Mathematical models are the base for unified methods of calculating and designing radio-electronic devices. The developed limiting continuous mathematical model of a DC/DC converter built using the SEPIC topology allows us to estimate the range of changes in currents flowing through the windings of the inductors and voltages on the capacitor plates, as well as determine their maximum and minimum values for various converter parameters, such as the power switching frequency key, fill factor, element values, etc. The research results show that the phase coordinates of the mathematical model tend to the real values of the currents and voltages of the converter when the switching frequency of the power switch is more than 200 kHz. A correspondence was established between the calculated values of the ripple ranges and the results obtained during modeling (with changes in the duty cycle and switching frequency of the power switch).</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"7 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141256944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.1134/s1063739724600122
Z. T. Kenzhaev, N. F. Zikrillaev, V. B. Odzhaev, K. A. Ismailov, V. S. Prosolovich, Kh. F. Zikrillaev, S. V. Koveshnikov
Abstract
The research results present the influence of nickel impurities introduced by diffusion into monocrystalline silicon on the characteristics of solar cells (SCs). It is established that doping with nickel atoms makes it possible to increase the lifetime of the MCCs in the material by up to a factor of two and the efficiency of SCs by 20–25%. It is shown that the distribution of nickel clusters in the volume of the material is almost uniform, and their size does not exceed 0.5 μm. The concentration of clusters in the volume is ~1011–1013 cm–3; and in the near-surface layer, ~1013–1015 cm–3. The physical mechanisms of the influence of the bulk and near-surface clusters of nickel atoms on the efficiency of silicon SCs are revealed. It is experimentally established that the decisive role in increasing their efficiency is played by the processes of gettering of recombination-active technological impurities by nickel clusters, occurring in the nickel-enriched front surface region of the SCs.
{"title":"Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell","authors":"Z. T. Kenzhaev, N. F. Zikrillaev, V. B. Odzhaev, K. A. Ismailov, V. S. Prosolovich, Kh. F. Zikrillaev, S. V. Koveshnikov","doi":"10.1134/s1063739724600122","DOIUrl":"https://doi.org/10.1134/s1063739724600122","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The research results present the influence of nickel impurities introduced by diffusion into monocrystalline silicon on the characteristics of solar cells (SCs). It is established that doping with nickel atoms makes it possible to increase the lifetime of the MCCs in the material by up to a factor of two and the efficiency of SCs by 20–25%. It is shown that the distribution of nickel clusters in the volume of the material is almost uniform, and their size does not exceed 0.5 μm. The concentration of clusters in the volume is ~10<sup>11</sup>–10<sup>13</sup> cm<sup>–3</sup>; and in the near-surface layer, ~10<sup>13</sup>–10<sup>15</sup> cm<sup>–3</sup>. The physical mechanisms of the influence of the bulk and near-surface clusters of nickel atoms on the efficiency of silicon SCs are revealed. It is experimentally established that the decisive role in increasing their efficiency is played by the processes of gettering of recombination-active technological impurities by nickel clusters, occurring in the nickel-enriched front surface region of the SCs.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141256876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study delves into the radiation properties of a reconfigurable antenna that integrates both traditional single-channel SPiN diodes and dual-channel compensating SPiN diodes as core elements. The dual-channel SPiN diode compensates for the attenuation of carrier concentration at the midpoint of the intrinsic region, resulting in a carrier concentration exceeding 1018 cm–3. The aim is to explore novel configurations of solid-state plasma antennas that have the potential to significantly improve radiation performance. The reconfigurable antenna is capable of operating in two distinct modes, specifically a low-frequency mode and a high-frequency mode, depending on the conducting state of the diode array. Through graphical analysis, it was observed that two reconfigured modes were successfully achieved, with relative bandwidths exceeding 13%. The incorporation of dual-channel compensating SPiN diodes led to notable performance improvements, as evident from a substantial reduction in the S11 parameter. These enhancements can be attributed to the intensified concentration and more uniform distribution of the solid-state plasma achieved by the dual-channel compensating devices.
{"title":"Investigation of Dual-Channel Compensating Plasma Diode for Reconfigurable Antenna","authors":"Yingying Wang, Yutian Li, Zhanrong Zhou, Xiaofang Shen, Chao Ma, Yang Gao, Yiming Chen","doi":"10.1134/s1063739723600917","DOIUrl":"https://doi.org/10.1134/s1063739723600917","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>This study delves into the radiation properties of a reconfigurable antenna that integrates both traditional single-channel SPiN diodes and dual-channel compensating SPiN diodes as core elements. The dual-channel SPiN diode compensates for the attenuation of carrier concentration at the midpoint of the intrinsic region, resulting in a carrier concentration exceeding 10<sup>18</sup> cm<sup>–3</sup>. The aim is to explore novel configurations of solid-state plasma antennas that have the potential to significantly improve radiation performance. The reconfigurable antenna is capable of operating in two distinct modes, specifically a low-frequency mode and a high-frequency mode, depending on the conducting state of the diode array. Through graphical analysis, it was observed that two reconfigured modes were successfully achieved, with relative bandwidths exceeding 13%. The incorporation of dual-channel compensating SPiN diodes led to notable performance improvements, as evident from a substantial reduction in the S11 parameter. These enhancements can be attributed to the intensified concentration and more uniform distribution of the solid-state plasma achieved by the dual-channel compensating devices.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"35 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141256713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.1134/s1063739724700781
A. S. Koigerov
Abstract
A series of models based on the finite element method (FEM) for analyzing the parameters of surface acoustic waves (SAWs) and devices based on them are described. The computer method for generating models in the COMSOL Multiphysics program is described in a generalized form. The work in three main solvers in the COMSOL environment—the stationary mode, eigenfrequency domain, and frequency domain—is described and graphically illustrated. The properties of Rayleigh waves and leaky SAWs are analyzed. A visualization of a number of characteristics is presented. The analysis of parameters such as the phase velocity of the wave, electromechanical coupling coefficient, and static capacitance of the transducer is considered. The examples consider an equidistant transducer, a transducer with split electrodes, and a unidirectional transducer of the DART type. Methods for analyzing harmonics in SAWs and the waveguide effect are proposed. It is shown that the model is valid for both single-crystal substrates and layered structures. The analysis of the temperature coefficient of the frequency for structures as such TCSAW (temperature-compensated SAW) and I.H.P.SAW (incredible high-performance SAW) is considered. A model for calculating the amplitude-frequency responses of devices is presented. It is shown that the data obtained as a result of the numerical analysis correspond to the experimental data and known published sources.
{"title":"Application of the Finite Element Method for Calculating Parameters of Surface Acoustic Waves and Devices Based on Them","authors":"A. S. Koigerov","doi":"10.1134/s1063739724700781","DOIUrl":"https://doi.org/10.1134/s1063739724700781","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A series of models based on the finite element method (FEM) for analyzing the parameters of surface acoustic waves (SAWs) and devices based on them are described. The computer method for generating models in the COMSOL Multiphysics program is described in a generalized form. The work in three main solvers in the COMSOL environment—the stationary mode, eigenfrequency domain, and frequency domain—is described and graphically illustrated. The properties of Rayleigh waves and leaky SAWs are analyzed. A visualization of a number of characteristics is presented. The analysis of parameters such as the phase velocity of the wave, electromechanical coupling coefficient, and static capacitance of the transducer is considered. The examples consider an equidistant transducer, a transducer with split electrodes, and a unidirectional transducer of the DART type. Methods for analyzing harmonics in SAWs and the waveguide effect are proposed. It is shown that the model is valid for both single-crystal substrates and layered structures. The analysis of the temperature coefficient of the frequency for structures as such TCSAW (temperature-compensated SAW) and I.H.P.SAW (incredible high-performance SAW) is considered. A model for calculating the amplitude-frequency responses of devices is presented. It is shown that the data obtained as a result of the numerical analysis correspond to the experimental data and known published sources.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"118 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141259550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-04DOI: 10.1134/s1063739723600723
Shaimaa Mostafa, Fathy Z. Amer, Mohamed M. ElKhatib, Roaa I. Mubarak
Abstract
The thermometer digital-to-analog converter (DAC) is a distinctive architecture that plays a vital role in converting digital data into corresponding analog signals, the thermometer DAC employs a resistor network where each bit of the digital input corresponds to a unique resistor. It has notable drawbacks that need careful consideration. As the resolution of the DAC increases, the number of required current sources grows exponentially, leading to complex and demanding circuitry. This can escalate power consumption and occupy significant chip area, which is a critical concern in integrated circuit design. Furthermore, the current mismatch between the multiple current sources. Therefore, integrating memristors into DACs paves the way for more compact and efficient designs, reducing system complexity and enhancing reliability. The Voltage ThrEshold Adaptive Memristor (VTEAM) model of memristor is validated by using Virtuoso. In addition, a digital-to-analog converter based on memristor technology is implemented, taking advantage of the memristor’s compact size, minimal power usage, and a voltage threshold that is relatively low. The DAC design being proposed is based on a core DAC cell that consists of two memristors connected in opposing orientations.
{"title":"Memristors Modelling and Simulation for Digital to Analog Converter Circuit","authors":"Shaimaa Mostafa, Fathy Z. Amer, Mohamed M. ElKhatib, Roaa I. Mubarak","doi":"10.1134/s1063739723600723","DOIUrl":"https://doi.org/10.1134/s1063739723600723","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The thermometer digital-to-analog converter (DAC) is a distinctive architecture that plays a vital role in converting digital data into corresponding analog signals, the thermometer DAC employs a resistor network where each bit of the digital input corresponds to a unique resistor. It has notable drawbacks that need careful consideration. As the resolution of the DAC increases, the number of required current sources grows exponentially, leading to complex and demanding circuitry. This can escalate power consumption and occupy significant chip area, which is a critical concern in integrated circuit design. Furthermore, the current mismatch between the multiple current sources. Therefore, integrating memristors into DACs paves the way for more compact and efficient designs, reducing system complexity and enhancing reliability. The Voltage ThrEshold Adaptive Memristor (VTEAM) model of memristor is validated by using Virtuoso. In addition, a digital-to-analog converter based on memristor technology is implemented, taking advantage of the memristor’s compact size, minimal power usage, and a voltage threshold that is relatively low. The DAC design being proposed is based on a core DAC cell that consists of two memristors connected in opposing orientations.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141256783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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