Pub Date : 2024-03-21DOI: 10.1134/s1063739723600632
K. B. Koksharov, Yu. I. Bogdanov, N. A. Bogdanova, Yu. A. Kuznetsov, V. F. Lukichev
Abstract
This work is a continuation of our research [1], aimed at developing methods for high-precision control of multilevel quantum systems (qudits). This study presents a method for precision quantum measurements of such systems using fuzzy quantum measurements. The developed method is used for precision reconstruction of quantum states under conditions of significant influence of amplitude and phase relaxation. The protocols of quantum measurements based on mutually unbiased bases of various dimensions are considered. The accuracy characteristics of sets of random states uniformly distributed with respect to the Haar measure are studied. A study was made of the dependence of the accuracy loss function on the parameters of phase and amplitude relaxation. It is shown that the results of the performed numerical experiments are in good agreement with the analytical results obtained on the basis of the universal distribution of accuracy losses using fuzzy measurement protocols.
{"title":"High-Precision Quantum Measurements of Qudits Taking into Account the Influence of Amplitude and Phase Relaxation","authors":"K. B. Koksharov, Yu. I. Bogdanov, N. A. Bogdanova, Yu. A. Kuznetsov, V. F. Lukichev","doi":"10.1134/s1063739723600632","DOIUrl":"https://doi.org/10.1134/s1063739723600632","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>This work is a continuation of our research [1], aimed at developing methods for high-precision control of multilevel quantum systems (qudits). This study presents a method for precision quantum measurements of such systems using fuzzy quantum measurements. The developed method is used for precision reconstruction of quantum states under conditions of significant influence of amplitude and phase relaxation. The protocols of quantum measurements based on mutually unbiased bases of various dimensions are considered. The accuracy characteristics of sets of random states uniformly distributed with respect to the Haar measure are studied. A study was made of the dependence of the accuracy loss function on the parameters of phase and amplitude relaxation. It is shown that the results of the performed numerical experiments are in good agreement with the analytical results obtained on the basis of the universal distribution of accuracy losses using fuzzy measurement protocols.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600413
I. D. Kopchinskii, V. V. Shorokhov
Abstract
Keldysh nonequilibrium diagram technique is used for a detailed description of electron transport through a system of tightly bound spatially separated localized states. Particular attention is paid to the predictive ability of the effective theory, for which the number of free parameters in the second-quantized Hamiltonian is reduced. The employed formalism in a variant of tight-binding model rigorously treats multi-electron tunneling effects and the discreteness of the energy spectra in low-dimensional structures. The model is also extended with Coulomb interaction of moderate strength. Proposed algorithm for calculating electric currents and occupation numbers of localized states in presence of weak Coulomb repulsion is implemented in software and tested on a model system of two consecutive three-level quantum dots. Electron transfer proceeds both sequentially between the dots and in parallel within each quantum dot. The calculated IV-curve and current stability diagram are intuitively explained using coordination energy diagrams. The model qualitatively reproduces typical effects in interference-based nanoelectronics: resonant tunneling, negative differential resistance, population inversion in a multi-level system. The impact of moderate Coulomb correlations on current stability diagram is examined. This demonstrates the capability of extended tight-binding model to incorporate weak Coulomb interaction into the description of electronic transport via discrete quantum states.
摘要 凯尔迪什非平衡图技术用于详细描述电子通过紧密结合的空间分离局部态系统的传输。研究特别关注有效理论的预测能力，因为有效理论减少了第二量子化哈密顿自由参数的数量。在紧束缚模型的变体中采用的形式主义严格处理了多电子隧道效应和低维结构中能谱的离散性。该模型还扩展了中等强度的库仑相互作用。提出的计算弱库仑斥力情况下局部态的电流和占据数的算法已在软件中实现，并在两个连续的三量级量子点模型系统上进行了测试。电子转移既在量子点之间顺序进行，也在每个量子点内部并行进行。计算出的 IV 曲线和电流稳定图可以用配位能图直观地解释。该模型定性地再现了基于干涉的纳米电子学中的典型效应：共振隧穿、负微分电阻、多级系统中的种群反转。研究了适度库仑相关性对电流稳定性图的影响。这证明了扩展的紧密结合模型有能力将弱库仑相互作用纳入通过离散量子态进行的电子传输描述中。
{"title":"Nonequilibrium Diagram Technique Applied to the Electronic Transport via Tightly Bound Localized States","authors":"I. D. Kopchinskii, V. V. Shorokhov","doi":"10.1134/s1063739723600413","DOIUrl":"https://doi.org/10.1134/s1063739723600413","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Keldysh nonequilibrium diagram technique is used for a detailed description of electron transport through a system of tightly bound spatially separated localized states. Particular attention is paid to the predictive ability of the effective theory, for which the number of free parameters in the second-quantized Hamiltonian is reduced. The employed formalism in a variant of tight-binding model rigorously treats multi-electron tunneling effects and the discreteness of the energy spectra in low-dimensional structures. The model is also extended with Coulomb interaction of moderate strength. Proposed algorithm for calculating electric currents and occupation numbers of localized states in presence of weak Coulomb repulsion is implemented in software and tested on a model system of two consecutive three-level quantum dots. Electron transfer proceeds both sequentially between the dots and in parallel within each quantum dot. The calculated IV-curve and current stability diagram are intuitively explained using coordination energy diagrams. The model qualitatively reproduces typical effects in interference-based nanoelectronics: resonant tunneling, negative differential resistance, population inversion in a multi-level system. The impact of moderate Coulomb correlations on current stability diagram is examined. This demonstrates the capability of extended tight-binding model to incorporate weak Coulomb interaction into the description of electronic transport via discrete quantum states.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600309
R. V. Selyukov, V. V. Naumov
Abstract
AlN films are prepared by reactive magnetron sputtering at a floating potential and at the bias –15 V on the substrate. It is found that ion-assisted deposition facilitates the formation of fiber texture AlN (104). This result can be explained by generation of compressive stress in films due to ion bombardment and preferred orientation (104) is favored for stressed films minimizing the elastic strain energy. Ion-assisted deposition provides dense and large-grained structure of AlN films due to high adatom mobility.
{"title":"Ion-Assisted Magnetron Deposition of AlN Films","authors":"R. V. Selyukov, V. V. Naumov","doi":"10.1134/s1063739723600309","DOIUrl":"https://doi.org/10.1134/s1063739723600309","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>AlN films are prepared by reactive magnetron sputtering at a floating potential and at the bias –15 V on the substrate. It is found that ion-assisted deposition facilitates the formation of fiber texture AlN (104). This result can be explained by generation of compressive stress in films due to ion bombardment and preferred orientation (104) is favored for stressed films minimizing the elastic strain energy. Ion-assisted deposition provides dense and large-grained structure of AlN films due to high adatom mobility.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140205715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600310
V. S. Gornostay-Polsky, V. I. Shevyakov
Abstract—
This paper examines the features of the metallization unit of a power transistor with a vertical channel. It consists of alternating layers based on depth and includes titanium, titanium nitride and tungsten. Thick-film aluminum wiring is placed on the surface of the silicon substrate. Based on Auger spectroscopy and analysis of transmission electron diffraction patterns, it was revealed that a titanium dislicide film in the C54 phase is formed using low-temperature heat treatment and subsequent high-temperature annealing. It is shown that the introduction of special cyclic plasma treatment after deposition of a layer of titanium nitride using the metal-organic chemical vapor deposition method (MOCVD) made it possible to reduce the resistance of the films and reduce the level of mechanical stress. It has been shown that the addition of rhenium, titanium and nitrogen in the range of 5–10 at % allows you to reduce the mechanical stress of the tungsten layer by 3–5 times. Depending on the method of deposition of tungsten (magnetron or chemical), we have proposed two design options for this unit. A method for forming aluminum wiring based on thick-film aluminum using a sacrificial layer of titanium nitride is proposed. The proposed solutions provide the opportunity to improve the electrical and mechanical properties of the metallization unit of MIS transistor structures with a vertical channel.
摘要--本文探讨了垂直沟道功率晶体管金属化单元的特点。它由基于深度的交替层组成，包括钛、氮化钛和钨。厚膜铝线被置于硅衬底表面。根据奥杰光谱学和透射电子衍射图分析，发现通过低温热处理和随后的高温退火形成了 C54 相的二菱锰化钛薄膜。研究表明，在使用金属有机化学气相沉积法（MOCVD）沉积一层氮化钛后，引入特殊的循环等离子体处理，可以降低薄膜的电阻和机械应力水平。研究表明，铼、钛和氮的添加量在 5-10% 的范围内，可将钨层的机械应力降低 3-5 倍。根据钨的沉积方法（磁控或化学），我们为该装置提出了两种设计方案。在厚膜铝的基础上，我们提出了一种利用氮化钛牺牲层形成铝布线的方法。所提出的解决方案为改善具有垂直通道的 MIS 晶体管结构金属化单元的电气和机械性能提供了机会。
{"title":"Investigation of the Features of Metallization Formation for N-MOS Transistor Structures with a Vertical Channel","authors":"V. S. Gornostay-Polsky, V. I. Shevyakov","doi":"10.1134/s1063739723600310","DOIUrl":"https://doi.org/10.1134/s1063739723600310","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract—</h3><p>This paper examines the features of the metallization unit of a power transistor with a vertical channel. It consists of alternating layers based on depth and includes titanium, titanium nitride and tungsten. Thick-film aluminum wiring is placed on the surface of the silicon substrate. Based on Auger spectroscopy and analysis of transmission electron diffraction patterns, it was revealed that a titanium dislicide film in the C<sub>54</sub> phase is formed using low-temperature heat treatment and subsequent high-temperature annealing. It is shown that the introduction of special cyclic plasma treatment after deposition of a layer of titanium nitride using the metal-organic chemical vapor deposition method (MOCVD) made it possible to reduce the resistance of the films and reduce the level of mechanical stress. It has been shown that the addition of rhenium, titanium and nitrogen in the range of 5–10 at % allows you to reduce the mechanical stress of the tungsten layer by 3–5 times. Depending on the method of deposition of tungsten (magnetron or chemical), we have proposed two design options for this unit. A method for forming aluminum wiring based on thick-film aluminum using a sacrificial layer of titanium nitride is proposed. The proposed solutions provide the opportunity to improve the electrical and mechanical properties of the metallization unit of MIS transistor structures with a vertical channel.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600784
V. Petruhanov, A. Pechen
Abstract
In this work, we review several results on development and application of incoherent version of GRAPE (Gradient Ascent Pulse Engineering) approach to optimization for open quantum systems driven by both coherent and incoherent controls. In the incoherent control approach, the environment serves as a control together with coherent field, and decoherence rates become generally time-dependent. For a qubit, explicit analytic expressions for evolution of the density matrix were obtained by solving a cubic equation via Cardano method. We discuss applications of incoherent GRAPE method (inGRAPE) to high fidelity gate generation for open one- and two-qubit systems and surprising properties of the underlying control landscapes, forming two groups — smooth single peak landscapes for Hadamard, C-NOT and C-Z gates, and more complicated with two peaks for T (or π/8) gate. For a qutrit, a formulation of the environment-assisted incoherent control with time-dependent decoherence rates is provided.
{"title":"Incoherent GRAPE for Optimization of Quantum Systems with Environmentally Assisted Control","authors":"V. Petruhanov, A. Pechen","doi":"10.1134/s1063739723600784","DOIUrl":"https://doi.org/10.1134/s1063739723600784","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this work, we review several results on development and application of incoherent version of GRAPE (Gradient Ascent Pulse Engineering) approach to optimization for open quantum systems driven by both coherent and incoherent controls. In the incoherent control approach, the environment serves as a control together with coherent field, and decoherence rates become generally time-dependent. For a qubit, explicit analytic expressions for evolution of the density matrix were obtained by solving a cubic equation via Cardano method. We discuss applications of incoherent GRAPE method (inGRAPE) to high fidelity gate generation for open one- and two-qubit systems and surprising properties of the underlying control landscapes, forming two groups — smooth single peak landscapes for Hadamard, C-NOT and C-Z gates, and more complicated with two peaks for T (or π/8) gate. For a qutrit, a formulation of the environment-assisted incoherent control with time-dependent decoherence rates is provided.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600140
V. P. Kudrya
Abstract
Using argon as an actinometric atom requires knowledge of its electron excitation kinetics. In turn, this kinetics is largely determined by electron impact excitation cross-sections as well as quenching rate constants for the argon metastable levels. Unfortunately, the published experimental data for these cross-sections differ both in their magnitude and in the type of energy dependence. We have shown that if we exclude the first point from the 2004 data sets, then the cross sections normalized at the 20 eV point can be fairly well approximated by well-known fitting formulas.
摘要将氩作为动量原子需要了解其电子激发动力学。反过来，这种动力学在很大程度上取决于电子碰撞激发截面以及氩态可变水平的淬灭速率常数。遗憾的是，已公布的这些截面的实验数据在其大小和能量依赖类型上都存在差异。我们已经证明，如果我们从 2004 年的数据集中排除第一个点，那么在 20 eV 点归一化的横截面可以通过著名的拟合公式得到相当好的近似值。
{"title":"Some Properties of Argon as an Actinometric Atom. I. Metastable Levels Excitation","authors":"V. P. Kudrya","doi":"10.1134/s1063739723600140","DOIUrl":"https://doi.org/10.1134/s1063739723600140","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Using argon as an actinometric atom requires knowledge of its electron excitation kinetics. In turn, this kinetics is largely determined by electron impact excitation cross-sections as well as quenching rate constants for the argon metastable levels. Unfortunately, the published experimental data for these cross-sections differ both in their magnitude and in the type of energy dependence. We have shown that if we exclude the first point from the 2004 data sets, then the cross sections normalized at the 20 eV point can be fairly well approximated by well-known fitting formulas.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600498
E. A. Dedkov, V. L. Kurochkin, V. N. Chizhevsky, M. V. Lahmitski, S. Ya. Kilin, R. A. Shakhovoy
Abstract
We present a new view at simulating the VCSEL spectrum based on stochastic version of the widely used SFM model [1]. In comparison to the existing results [2], our method provides not only wavelengths and relative linewidths of lasing spikes but also the full spectrum. We show that it captures all known features such as polarization switching [3], four-wave-mixing (FWM) spike [4], and relaxation oscillations [5].
{"title":"Simulation of the Polarization-Resolved Spectra of VCSEL","authors":"E. A. Dedkov, V. L. Kurochkin, V. N. Chizhevsky, M. V. Lahmitski, S. Ya. Kilin, R. A. Shakhovoy","doi":"10.1134/s1063739723600498","DOIUrl":"https://doi.org/10.1134/s1063739723600498","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We present a new view at simulating the VCSEL spectrum based on stochastic version of the widely used SFM model [1]. In comparison to the existing results [2], our method provides not only wavelengths and relative linewidths of lasing spikes but also the full spectrum. We show that it captures all known features such as polarization switching [3], four-wave-mixing (FWM) spike [4], and relaxation oscillations [5].</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"115 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600681
V. Petukhov, N. Struchkov, V. Nevolin
Abstract
In this work we show a setup and optimized process of ultrasonic spray and electrostatic-assisted deposition of photoresist onto silicon substrates with deep etched areas. Drop size reduction at applied electric field is shown. The deposition of FP-3515 photoresist is conducted at a temperature of 45°C and provides good photoresist transfer and good film cleanness and quality. Deposition and drying of the photoresist layer is conducted simultaneously which implies uniform drying of the film and, thus, absence of mechanical strain. Another advantage is a possibility to create multi-layer coatings without partial dissolution of previously deposited layer. Deposited photoresist layer forms conformal film at edges and walls of deep etched silicon substrate. Maskless laser lithography has been conducted successfully that proved process practical suitability.
{"title":"Electrostatic-Assisted Ultrasonic Spray-Coating for Nanotechnology Applications","authors":"V. Petukhov, N. Struchkov, V. Nevolin","doi":"10.1134/s1063739723600681","DOIUrl":"https://doi.org/10.1134/s1063739723600681","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this work we show a setup and optimized process of ultrasonic spray and electrostatic-assisted deposition of photoresist onto silicon substrates with deep etched areas. Drop size reduction at applied electric field is shown. The deposition of FP-3515 photoresist is conducted at a temperature of 45°C and provides good photoresist transfer and good film cleanness and quality. Deposition and drying of the photoresist layer is conducted simultaneously which implies uniform drying of the film and, thus, absence of mechanical strain. Another advantage is a possibility to create multi-layer coatings without partial dissolution of previously deposited layer. Deposited photoresist layer forms conformal film at edges and walls of deep etched silicon substrate. Maskless laser lithography has been conducted successfully that proved process practical suitability.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600528
D. S. Seregin, A. S. Vishnevskiy, D. A. Vorotyntsev, P. A. Mokrushev, K. A. Vorotilov
Abstract
In this work, the effects of solvent type and surfactant (porogen) on the properties of porous methyl-modified spin-on films were investigated. A qualitative assessment of the defectivity of the formed films was carried out. The refractive index, dielectric permittivity, and porosimetric properties of the films were analyzed using the method of spectral ellipsometry, frequency dependence of capacitance analysis, and porosimetry. It was found that the film properties depend more strongly on the surfactant type than on the solvent type. The highest porosity value is obtained with the use of nonionic surfactant Brij® 76, which has a higher molecular weight. At the same time, at lower molecular weight, the ionic surfactant CTAB provides comparable porosity. Despite the high porosity, samples from film-forming solutions containing CTAB do not exhibit a lower dielectric constant, which is presumably due to their hydrophilicity or porogen residue. The lowest value of the dielectric constant k ≈ 2.1 is typical for films made from film-forming solutions containing Brij® 76. The application of other porogens allows us to obtain a k value ~2.3–2.4.
摘要 在这项工作中，研究了溶剂类型和表面活性剂（致孔剂）对多孔甲基改性旋涂薄膜性能的影响。对所形成薄膜的缺陷性进行了定性评估。使用光谱椭偏仪、频率相关电容分析和孔隙度量法分析了薄膜的折射率、介电常数和孔隙度量特性。结果发现，薄膜特性与表面活性剂类型的关系比与溶剂类型的关系更为密切。使用分子量较高的非离子表面活性剂 Brij® 76 可获得最高的孔隙率值。同时，离子型表面活性剂 CTAB 的分子量较低，其孔隙率也与之相当。尽管孔隙率很高，但含有 CTAB 的成膜溶液样品并没有表现出较低的介电常数，这可能是由于其亲水性或孔源残留物造成的。介电常数 k ≈ 2.1 的最低值是由含有 Brij® 76 的成膜溶液制成的薄膜的典型值。使用其他致孔剂可使 k 值达到 ~2.3-2.4。
{"title":"Effect of Surfactant and Solvent on the Pore Structure of Organosilica Glass Film","authors":"D. S. Seregin, A. S. Vishnevskiy, D. A. Vorotyntsev, P. A. Mokrushev, K. A. Vorotilov","doi":"10.1134/s1063739723600528","DOIUrl":"https://doi.org/10.1134/s1063739723600528","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this work, the effects of solvent type and surfactant (porogen) on the properties of porous methyl-modified spin-on films were investigated. A qualitative assessment of the defectivity of the formed films was carried out. The refractive index, dielectric permittivity, and porosimetric properties of the films were analyzed using the method of spectral ellipsometry, frequency dependence of capacitance analysis, and porosimetry. It was found that the film properties depend more strongly on the surfactant type than on the solvent type. The highest porosity value is obtained with the use of nonionic surfactant Brij<sup>®</sup> 76, which has a higher molecular weight. At the same time, at lower molecular weight, the ionic surfactant CTAB provides comparable porosity. Despite the high porosity, samples from film-forming solutions containing CTAB do not exhibit a lower dielectric constant, which is presumably due to their hydrophilicity or porogen residue. The lowest value of the dielectric constant <i>k</i> ≈ 2.1 is typical for films made from film-forming solutions containing Brij<sup>®</sup> 76. The application of other porogens allows us to obtain a <i>k</i> value ~2.3–2.4.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600851
A. Rogozhin, A. Miakonkikh, K. Rudenko
Abstract
Ruthenium thin films were deposited by plasma enhanced atomic layer deposition (PEALD) using Ru(EtCp)2 and oxygen plasma on the modified silicon surface and SiO2/Si substrates. The substrate temperature has a significant impact on film growth. The GXRD and SIMS analysis have shown that at the substrate temperature T = 375°C there is a sharp change in the mechanisms of surface reactions, which leads to a change in the film composition from RuO2 at low temperatures to a pure Ru film at higher temperatures. This was confirmed by measurements of the electrical resistivity of Ru-based films. The lowest surface roughness ~1.5 nm was obtained at a film thickness of 29 nm deposited at 375°C on a SiO2/Si-substrate. The measured resistivity of the Ru film was 18–19 μΩ cm. Issues regarding the plasma-chemical etching of ruthenium and the spin-on of a low-k dielectric onto arrays of lines are taken into account.
{"title":"Ruthenium for Subtractive and Semi-Damascene Processes of Interconnects Formation","authors":"A. Rogozhin, A. Miakonkikh, K. Rudenko","doi":"10.1134/s1063739723600851","DOIUrl":"https://doi.org/10.1134/s1063739723600851","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Ruthenium thin films were deposited by plasma enhanced atomic layer deposition (PEALD) using Ru(EtCp)<sub>2</sub> and oxygen plasma on the modified silicon surface and SiO<sub>2</sub>/Si substrates. The substrate temperature has a significant impact on film growth. The GXRD and SIMS analysis have shown that at the substrate temperature <i>T</i> = 375°C there is a sharp change in the mechanisms of surface reactions, which leads to a change in the film composition from RuO<sub>2</sub> at low temperatures to a pure Ru film at higher temperatures. This was confirmed by measurements of the electrical resistivity of Ru-based films. The lowest surface roughness ~1.5 nm was obtained at a film thickness of 29 nm deposited at 375°C on a SiO<sub>2</sub>/Si-substrate. The measured resistivity of the Ru film was 18–19 μΩ cm. Issues regarding the plasma-chemical etching of ruthenium and the spin-on of a low-k dielectric onto arrays of lines are taken into account.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"148 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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