Pub Date : 2024-05-04DOI: 10.1134/s1063739723600231
D. V. Nefedov, N. O. Shabunin, D. N. Bratashov
Abstract
The influence of current activation by the breakdown of the electric pulse on changes in the surface morphology and emission characteristics of a field emission (FE) cathode made based on carbon films obtained by deposition in a microwave gas discharge plasma is studied. The current activation of these films is carried out by applying microsecond voltage pulses until an electrical breakdown occurred. It is shown that during the activation, the morphology of the film surface in the breakdown region changes with the formation of a microsized emitting structure, which significantly improves the FE characteristics of the cathodes based on carbon films.
摘要 研究了电脉冲击穿电流活化对基于在微波气体放电等离子体中沉积获得的碳薄膜制成的场发射（FE）阴极的表面形态和发射特性变化的影响。这些薄膜的电流活化是通过施加微秒级电压脉冲进行的，直到发生电击穿。结果表明，在活化过程中，击穿区域的薄膜表面形态发生了变化，形成了微小的发射结构，从而显著改善了基于碳薄膜的阴极的 FE 特性。
{"title":"Structuring of the Surface of Thin Carbon Films during Activation by Microsecond Current Pulses","authors":"D. V. Nefedov, N. O. Shabunin, D. N. Bratashov","doi":"10.1134/s1063739723600231","DOIUrl":"https://doi.org/10.1134/s1063739723600231","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The influence of current activation by the breakdown of the electric pulse on changes in the surface morphology and emission characteristics of a field emission (FE) cathode made based on carbon films obtained by deposition in a microwave gas discharge plasma is studied. The current activation of these films is carried out by applying microsecond voltage pulses until an electrical breakdown occurred. It is shown that during the activation, the morphology of the film surface in the breakdown region changes with the formation of a microsized emitting structure, which significantly improves the FE characteristics of the cathodes based on carbon films.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"115 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-04DOI: 10.1134/s1063739723600334
O. L. Golikov, I. Yu. Zabavichev, A. S. Ivanov, S. V. Obolensky, E. S. Obolenskaya, D. G. Paveliev, A. A. Potekhin, A. S. Puzanov, E. A. Tarasova, S. V. Khazanova
Abstract
A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity region, which makes it possible to implement not only amplification but also the generation and multiplication of high-frequency oscillations.
{"title":"Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter","authors":"O. L. Golikov, I. Yu. Zabavichev, A. S. Ivanov, S. V. Obolensky, E. S. Obolenskaya, D. G. Paveliev, A. A. Potekhin, A. S. Puzanov, E. A. Tarasova, S. V. Khazanova","doi":"10.1134/s1063739723600334","DOIUrl":"https://doi.org/10.1134/s1063739723600334","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A set of transfer and output current–voltage characteristics of a bipolar transistor with a short-period superlattice in the emitter region are calculated. It is shown that the presence of a superlattice in the transistor structure leads to the formation of a negative differential conductivity region, which makes it possible to implement not only amplification but also the generation and multiplication of high-frequency oscillations.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140884523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-04DOI: 10.1134/s1063739723600127
M. M. Asadov, S. O. Mammadova, S. N. Mustafaeva, S. S. Huseynova, V. F. Lukichev
Abstract
The T–x phase diagram of the quasi-binary system ({text{L}}{{{text{i}}}_{2}}{text{O}}- {text{Ti}}{{{text{O}}}_{2}}) was refined and the isothermal cross section of the ternary ({text{Li}}- {text{Ti}}- {text{O}}) system at 298 K was constructed. The equilibrium phase regions of ({text{Li}}- {text{Ti}}- {text{O}}) in the solid state are determined with the participation of boundary binary oxides and four intermediate ternary compounds ({text{L}}{{{text{i}}}_{4}}{text{Ti}}{{{text{O}}}_{4}}), ({text{L}}{{{text{i}}}_{2}}{text{Ti}}{{{text{O}}}_{3}}), ({text{L}}{{{text{i}}}_{4}}{text{T}}{{{text{i}}}_{5}}{{{text{O}}}_{{12}}}) and ({text{L}}{{{text{i}}}_{2}}{text{T}}{{{text{i}}}_{3}}{{{text{O}}}_{7}}). Using the density functional theory (DFT LSDA) method, the formation energies (({{Delta }_{f}}E)) of the indicated ternary compounds of the ({text{L}}{{{text{i}}}_{2}}{text{O}}- {text{Ti}}{{{text{O}}}_{2}}) system were calculated and the dependence of ({{Delta }_{f}}E) on the composition was plotted. Ab initio modeling of supercells based on M-doped (left( {{text{M }} = {text{ Zr}},{text{ Nb}}} right)) anode material based on the ({text{L}}{{{text{i}}}_{4}}{text{T}}{{{text{i}}}_{5}}{{{text{O}}}_{{12}}}) (({text{LTO}})) compound with a monoclinic structure (m) was carried out. It has been shown that partial substitution of cations and oxygen in the ({text{m}}- {text{LTO}}- {text{M}}) structure increases the efficiency of a lithium-ion battery (({text{LIB}})) both by stabilizing the structure and by increasing the diffusion rate of ({text{L}}{{{text{i}}}^{ + }}). Due to the contribution of d-orbitals (({text{Z}}{{{text{r}}}^{{4 + }}},,4{text{d}},)({text{N}}{{{text{b}}}^{{3 + }}}) 4d orbitals) to the exchange energy, partial polarization of electronic states occurs and the electronic conductivity of ({text{m}}- {text{LTO}}- {text{M}}) increases. The formation of oxygen vacancies in the ({text{m}}- {text{LTO}}- {text{M}}) crystal lattice, as in binary oxides, can create donor levels and improve the transport of ({text{L}}{{{text{i}}}^{ + }}) and electrons. M-doping of the ({text{m}}- {text{LTO}}) structure by replacing cations, in particular lithium, with Zr or Nb atoms noticeably reduces the band gap (({{E}_{{text{g}}}})) of ({text{m}}- {text{LTO}}- {text{M}}) supercells. In this case, in the ({text{m}}- {text{LTO}}- {text{M}}) band structure, the Fermi level shifts to the conduction band and the band gap narrows. Decreasing the ({{E}_{{text{g}}}}) value increases the electronic and lithium-ion conductivity of ({text{m}}- {text{LTO}}- {text{M}}) supercells
摘要 完善了准二元体系({text{L}}{{text{i}}}_{2}}{text{O}}- {text{Ti}}{{text{O}}}_{2}})的T-x相图，并构建了三元({text{Li}}- {text{Ti}}-{text{O}}})体系在298 K下的等温截面。在边界二元氧化物和四种中间三元化合物 ({{L}}{{text{i}}_{4}}{text{Ti}}{{{text{O}}} 的参与下，确定了 ({{L}}{{text{i}}_{4}}{text{Ti}}{{{text{O}}}_{4}}) 在固态下的平衡相区、({text{L}}{{{text{i}}}_{2}}{text{Ti}}{{{text{O}}}_{3}}),({text{L}}{{{text{i}}}_{4}}{text{T}}{{{text{i}}}_{5}}{{{text{O}}}_{{12}}}) and ({text{L}}{{{text{i}}}_{2}}{text{T}}{{{text{i}}}_{3}}{{{text{O}}}_{7}}).使用密度泛函理论（DFT LSDA）方法、({text{L}}{{text{i}}}_{2}}{text{O}}-{text{Ti}}{{text{O}}}_{2}})体系的三元化合物的形成能(({{Delta }_{f}}E))，并绘制了({{Delta }_{f}}E)对组成的依赖关系图。基于掺杂 M 的超级电池的 Ab initio 建模（{{text{M }} = {text{ Zr}}、({text{L}}{{text{i}}}_{4}}{text{T}}{{text{i}}}_{5}}{{{text{O}}}}_{12}}}})化合物的单斜结构（m）为基础的正极材料进行了 Ab initio 建模。研究表明，在({text{m}}- {text{LTO}}- {text{M}})结构中部分取代阳离子和氧可以通过稳定结构和提高({text{L}}{{text{i}}}^{ + }})的扩散速率来提高锂离子电池（({text{LIB}})）的效率。由于 d 轨道（({text{Z}}{{text{r}}^{4 + }}},4{text{d}},) ({text{N}}{{text{b}}^{3 + }}}) 4d 轨道）对交换能的贡献、电子态发生部分极化，({text{m}}- {text{LTO}}- {text{M}})的电子传导性增加。与二元氧化物一样，在（{{m}}- {{LTO}}- {{M}}）晶格中形成的氧空位可以产生供体水平，改善（{L}}{{i}}^{ + }}）和电子的传输。通过用锆原子或铌原子取代阳离子，特别是锂原子，对({text{m}}- {text{LTO}})结构进行M掺杂，可以明显降低({text{m}}- {text{LTO}}-{text{M}})超级电池的带隙（({{E}_{text{g}}}})）。在这种情况下，在({/text{m}}- {text{LTO}}- {/text{M}}/)带状结构中，费米级向导带移动，带隙变窄。降低({{E}_{text/{g}}}}/)值可以提高({text{m}}- {text{LTO}}- {text{M}}/)超级电池的电子和锂离子电导率。
{"title":"Modeling of the Electronic Properties of M-Doped Supercells Li4Ti5O12–M (М = Zr, Nb) with a Monoclinic Structure for Lithium-Ion Batteries","authors":"M. M. Asadov, S. O. Mammadova, S. N. Mustafaeva, S. S. Huseynova, V. F. Lukichev","doi":"10.1134/s1063739723600127","DOIUrl":"https://doi.org/10.1134/s1063739723600127","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The T–<i>x</i> phase diagram of the quasi-binary system <span>({text{L}}{{{text{i}}}_{2}}{text{O}}- {text{Ti}}{{{text{O}}}_{2}})</span> was refined and the isothermal cross section of the ternary <span>({text{Li}}- {text{Ti}}- {text{O}})</span> system at 298 K was constructed. The equilibrium phase regions of <span>({text{Li}}- {text{Ti}}- {text{O}})</span> in the solid state are determined with the participation of boundary binary oxides and four intermediate ternary compounds <span>({text{L}}{{{text{i}}}_{4}}{text{Ti}}{{{text{O}}}_{4}})</span>, <span>({text{L}}{{{text{i}}}_{2}}{text{Ti}}{{{text{O}}}_{3}})</span>, <span>({text{L}}{{{text{i}}}_{4}}{text{T}}{{{text{i}}}_{5}}{{{text{O}}}_{{12}}})</span> and <span>({text{L}}{{{text{i}}}_{2}}{text{T}}{{{text{i}}}_{3}}{{{text{O}}}_{7}})</span>. Using the density functional theory (DFT LSDA) method, the formation energies <span>(({{Delta }_{f}}E))</span> of the indicated ternary compounds of the <span>({text{L}}{{{text{i}}}_{2}}{text{O}}- {text{Ti}}{{{text{O}}}_{2}})</span> system were calculated and the dependence of <span>({{Delta }_{f}}E)</span> on the composition was plotted. Ab initio modeling of supercells based on M-doped <span>(left( {{text{M }} = {text{ Zr}},{text{ Nb}}} right))</span> anode material based on the <span>({text{L}}{{{text{i}}}_{4}}{text{T}}{{{text{i}}}_{5}}{{{text{O}}}_{{12}}})</span> (<span>({text{LTO}})</span>) compound with a monoclinic structure (m) was carried out. It has been shown that partial substitution of cations and oxygen in the <span>({text{m}}- {text{LTO}}- {text{M}})</span> structure increases the efficiency of a lithium-ion battery (<span>({text{LIB}})</span>) both by stabilizing the structure and by increasing the diffusion rate of <span>({text{L}}{{{text{i}}}^{ + }})</span>. Due to the contribution of d-orbitals (<span>({text{Z}}{{{text{r}}}^{{4 + }}},,4{text{d}},)</span> <span>({text{N}}{{{text{b}}}^{{3 + }}})</span> 4d orbitals) to the exchange energy, partial polarization of electronic states occurs and the electronic conductivity of <span>({text{m}}- {text{LTO}}- {text{M}})</span> increases. The formation of oxygen vacancies in the <span>({text{m}}- {text{LTO}}- {text{M}})</span> crystal lattice, as in binary oxides, can create donor levels and improve the transport of <span>({text{L}}{{{text{i}}}^{ + }})</span> and electrons. M-doping of the <span>({text{m}}- {text{LTO}})</span> structure by replacing cations, in particular lithium, with Zr or Nb atoms noticeably reduces the band gap (<span>({{E}_{{text{g}}}})</span>) of <span>({text{m}}- {text{LTO}}- {text{M}})</span> supercells. In this case, in the <span>({text{m}}- {text{LTO}}- {text{M}})</span> band structure, the Fermi level shifts to the conduction band and the band gap narrows. Decreasing the <span>({{E}_{{text{g}}}})</span> value increases the electronic and lithium-ion conductivity of <span>({text{m}}- {text{LTO}}- {text{M}})</span> supercells","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"38 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140884387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600292
S. S. Evstafyev, V. K. Samoylikov, D. V. Vertyanov
Abstract—
In a previous study, the authors demonstrated the steps necessary to determine the performance characteristics of a micromechanical mirror element. The mirror is made up of two bimorph structures consisting of aluminum and silicon dioxide, with a reflective element coated in aluminum attached to movable beams. By applying voltage to electrical heating elements within the beams, the structure can be manipulated due to uneven expansion of the materials. In this study, finite element analysis software is used to simulate the mirror and compare the results with analytical methods. The importance of accurate parameter calculation in designing micromechanical devices is emphasized. The study shows that the deflection sweep, overheating values, and heating/cooling times of the mirror beams align with previously calculated analytical expressions and experimental results. This suggests that the analytical method described in previous studies can be applied to designing micromechanical devices that rely on thermal principles and require precise temperature control for optimal performance. Also the package characteristics are considered and guidelines for it are given with consideration to mirror performance.
{"title":"Modeling of Heat Transfer for a Three-Dimensional Microelectromechanical Mirror Element with Consideration of Its Packaging Features","authors":"S. S. Evstafyev, V. K. Samoylikov, D. V. Vertyanov","doi":"10.1134/s1063739723600292","DOIUrl":"https://doi.org/10.1134/s1063739723600292","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>—</h3><p>In a previous study, the authors demonstrated the steps necessary to determine the performance characteristics of a micromechanical mirror element. The mirror is made up of two bimorph structures consisting of aluminum and silicon dioxide, with a reflective element coated in aluminum attached to movable beams. By applying voltage to electrical heating elements within the beams, the structure can be manipulated due to uneven expansion of the materials. In this study, finite element analysis software is used to simulate the mirror and compare the results with analytical methods. The importance of accurate parameter calculation in designing micromechanical devices is emphasized. The study shows that the deflection sweep, overheating values, and heating/cooling times of the mirror beams align with previously calculated analytical expressions and experimental results. This suggests that the analytical method described in previous studies can be applied to designing micromechanical devices that rely on thermal principles and require precise temperature control for optimal performance. Also the package characteristics are considered and guidelines for it are given with consideration to mirror performance.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140196767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s106373972360019x
Z. T. Azamatov, V. E. Gaponov, A. A. Jeenbekov, A. B. Bakhromov
Abstract
Currently, one of the rapidly developing optical methods is the digital version of shear interferometry (shearography). The advantages of the method are: contactless method of obtaining data; low dependence on the shape and surface of the material being studied; determination of gradients of movements of surface points, manifested in the form of anomalies in the pattern of interference fringes, which are associated with areas of deformation. Experiments were carried out to obtain shearograms using a Michelson interferometer. An optical scheme for forming an image shift was tested. A scheme of a compact speckle interferometer for digital shearography has been proposed and implemented. A software algorithm for obtaining shearograms has been implemented. The device was tested to determine out-of-plane deformations on samples such as a round thin membrane. Experiments were carried out to detect defects in welds as zones with nonuniform deformation.
{"title":"Digital Shearograph for Detecting Defect in Materials","authors":"Z. T. Azamatov, V. E. Gaponov, A. A. Jeenbekov, A. B. Bakhromov","doi":"10.1134/s106373972360019x","DOIUrl":"https://doi.org/10.1134/s106373972360019x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Currently, one of the rapidly developing optical methods is the digital version of shear interferometry (shearography). The advantages of the method are: contactless method of obtaining data; low dependence on the shape and surface of the material being studied; determination of gradients of movements of surface points, manifested in the form of anomalies in the pattern of interference fringes, which are associated with areas of deformation. Experiments were carried out to obtain shearograms using a Michelson interferometer. An optical scheme for forming an image shift was tested. A scheme of a compact speckle interferometer for digital shearography has been proposed and implemented. A software algorithm for obtaining shearograms has been implemented. The device was tested to determine out-of-plane deformations on samples such as a round thin membrane. Experiments were carried out to detect defects in welds as zones with nonuniform deformation.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"156 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140196927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600516
R. Aliasgari Renani, O. A. Soltanovich, M. A. Knyazev, S. V. Koveshnikov
Abstract
Silicon oxide based and aluminum gated MOS structures fabricated on n-type silicon are investigated after irradiation with low energy electrons in scanning electron microscope. The thermally stimulated current (TSC) technique in the temperature range from 80 K to 320 K revealed a number of the electron beam induced charge traps. With the help of the capacitance-voltage method, the traps revealed by the TSC were identified by their location (within dielectric, semiconductor or at the interface) and by their nature (trap for electrons or for holes).
摘要 在扫描电子显微镜下，研究了用低能量电子辐照在 n 型硅上制作的氧化硅基和铝栅 MOS 结构。热激励电流（TSC）技术在 80 K 至 320 K 的温度范围内揭示了一些电子束诱导的电荷陷阱。在电容-电压法的帮助下，通过位置（介质、半导体或界面）和性质（电子或空穴陷阱）确定了热刺激电流技术所揭示的陷阱。
{"title":"Investigation of Low Energy Electron Irradiated SiO2 Based MOS Devices by Capacitance-Voltage and Thermally Stimulated Current Techniques","authors":"R. Aliasgari Renani, O. A. Soltanovich, M. A. Knyazev, S. V. Koveshnikov","doi":"10.1134/s1063739723600516","DOIUrl":"https://doi.org/10.1134/s1063739723600516","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Silicon oxide based and aluminum gated MOS structures fabricated on n-type silicon are investigated after irradiation with low energy electrons in scanning electron microscope. The thermally stimulated current (TSC) technique in the temperature range from 80 K to 320 K revealed a number of the electron beam induced charge traps. With the help of the capacitance-voltage method, the traps revealed by the TSC were identified by their location (within dielectric, semiconductor or at the interface) and by their nature (trap for electrons or for holes).</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600358
V. P. Kudrya
Abstract
Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures.
{"title":"Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching","authors":"V. P. Kudrya","doi":"10.1134/s1063739723600358","DOIUrl":"https://doi.org/10.1134/s1063739723600358","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600504
A. A. Semenov, A. M. Satanin
Abstract
The generation of a periodic sequence of electromagnetic pulses by an array of Josephson qubits imbedded in a superconducting resonator and coupled to the resonator strip by means of capacitors and inductors (electro-dipole and magneto-dipole interaction) is studied. It is shown that in a single-mode approximation, the system of qubits is described by a generalized Rabi–Dicke model. In the case of a dense chain of qubits and a large mode population, the quasi-classical approximation is used to describe the electromagnetic field and collective excitations of qubits (Maxwell–Bloch equations). It is shown that this system can generate electric and magnetic solitons, as well as their mixtures. It is found that in the case of symmetric coupling of qubits with a resonator, dense and stable sequences (trains) of solitons are generated.
{"title":"Generator of Electromagnetic Pulses by an Array of Josephson Qubits with Hybrid Coupling to a Resonator","authors":"A. A. Semenov, A. M. Satanin","doi":"10.1134/s1063739723600504","DOIUrl":"https://doi.org/10.1134/s1063739723600504","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The generation of a periodic sequence of electromagnetic pulses by an array of Josephson qubits imbedded in a superconducting resonator and coupled to the resonator strip by means of capacitors and inductors (electro-dipole and magneto-dipole interaction) is studied. It is shown that in a single-mode approximation, the system of qubits is described by a generalized Rabi–Dicke model. In the case of a dense chain of qubits and a large mode population, the quasi-classical approximation is used to describe the electromagnetic field and collective excitations of qubits (Maxwell–Bloch equations). It is shown that this system can generate electric and magnetic solitons, as well as their mixtures. It is found that in the case of symmetric coupling of qubits with a resonator, dense and stable sequences (trains) of solitons are generated.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"54 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600553
I. D. Lazarev, A. N. Pyrkov
Abstract
In the last decade, different theoretical methods for entanglement generation between distant BEC qubits (macroscopic cold atomic ensembles) were proposed. However, experimental realization of such states is still challenging beside some special cases. The most theoretically investigated entangled states between macroscopic BECs are nonmaximally entangled states obtained with (SzSz) entangling Hamiltonian. With the use of such states, the protocols for quantum teleportation, remote state preporation and many others were developed for macroscopic qubits on the basis of BECs. Here we show that it is possible to obtain such states with the use of the bosonic analog of (XY) Hamiltonian and the methods of quantum optimal control. We compare performance of this scheme in the meaning of fidelity and entanglement for different drift and control Hamiltonians. We use the well-established QuTip open python library for all calculations.
{"title":"Generation of Nonmaximally Entangled States between BECs with Quantum Optimal Control Methods","authors":"I. D. Lazarev, A. N. Pyrkov","doi":"10.1134/s1063739723600553","DOIUrl":"https://doi.org/10.1134/s1063739723600553","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In the last decade, different theoretical methods for entanglement generation between distant BEC qubits (macroscopic cold atomic ensembles) were proposed. However, experimental realization of such states is still challenging beside some special cases. The most theoretically investigated entangled states between macroscopic BECs are nonmaximally entangled states obtained with <span>(SzSz)</span> entangling Hamiltonian. With the use of such states, the protocols for quantum teleportation, remote state preporation and many others were developed for macroscopic qubits on the basis of BECs. Here we show that it is possible to obtain such states with the use of the bosonic analog of <span>(XY)</span> Hamiltonian and the methods of quantum optimal control. We compare performance of this scheme in the meaning of fidelity and entanglement for different drift and control Hamiltonians. We use the well-established QuTip open python library for all calculations.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600164
E. Ivchenko, A. Chernov, A. Khmelev, V. Kurochkin
Abstract
Satellite-based quantum communication is a promising technology for the secure worldwide sharing of data because quantum states are conveyed across free-space links with significantly less attenuation than optical fiber. However, the restricted communication time and dynamic parameter changes limit the secret key length, and to maximize the possible final key, an effective division of satellite-to-ground quantum communication at intervals must be chosen. Here, we present an original blockwise analysis for maximizing secret key length using the signal-to-noise ratio obtained after the frequency synchronization procedure. To validate our method, we perform an experimental simulation of the quantum key distribution protocol between the Micius satellite and the 600 mm aperture ground station with additional random channel breaks. As a result, the proposed blockwise method leads to an increase in the final key length compared to processing the full amount of noisy data.
{"title":"Blockwise Maximization of the Secret Key with Signal Breaks in Satellite-Based Quantum Key Distribution","authors":"E. Ivchenko, A. Chernov, A. Khmelev, V. Kurochkin","doi":"10.1134/s1063739723600164","DOIUrl":"https://doi.org/10.1134/s1063739723600164","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Satellite-based quantum communication is a promising technology for the secure worldwide sharing of data because quantum states are conveyed across free-space links with significantly less attenuation than optical fiber. However, the restricted communication time and dynamic parameter changes limit the secret key length, and to maximize the possible final key, an effective division of satellite-to-ground quantum communication at intervals must be chosen. Here, we present an original blockwise analysis for maximizing secret key length using the signal-to-noise ratio obtained after the frequency synchronization procedure. To validate our method, we perform an experimental simulation of the quantum key distribution protocol between the Micius satellite and the 600 mm aperture ground station with additional random channel breaks. As a result, the proposed blockwise method leads to an increase in the final key length compared to processing the full amount of noisy data.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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