Pub Date : 2024-03-21DOI: 10.1134/s1063739723600450
D. V. Andreev, V. M. Maslovsky, V. V. Andreev
Abstract—
The paper proposes a novel technique of time depend dielectric breakdown for the wafer-level testing of thin dielectric of MIS devices based on concatenation of J-Ramp and Bounded J-Ramp methods. The suggested method enhances the existing method capabilities by introducing measurement injection modes. When DUT is under the measurement mode, the charge injection into the gate dielectric is realized under constant current density Jm at which any significant charge degradation of dielectric is not observed. Introduction of the measurement modes give an opportunity to monitor a change of the charge state of thin gate dielectric during all the test. The suggested test is started similar to Bounded J-Ramp method and then in order to raise the monitoring speed, the value of bounded current Jb could be step wisely increased over certain time intervals which are much longer in time in comparison with J-Ramp method. As a result, the charge injection into the gate dielectric could be implemented under multiple Jb values. This test algorithm gives an opportunity to greatly enhance functional capabilities of the existing test methods and the suggested technique raises speed to test.
{"title":"Technique of Time Depend Dielectric Breakdown for the Wafer-Level Testing of Thin Dielectrics of MIS Devices","authors":"D. V. Andreev, V. M. Maslovsky, V. V. Andreev","doi":"10.1134/s1063739723600450","DOIUrl":"https://doi.org/10.1134/s1063739723600450","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract—</h3><p>The paper proposes a novel technique of time depend dielectric breakdown for the wafer-level testing of thin dielectric of MIS devices based on concatenation of J-Ramp and Bounded J-Ramp methods. The suggested method enhances the existing method capabilities by introducing measurement injection modes. When DUT is under the measurement mode, the charge injection into the gate dielectric is realized under constant current density <i>J</i><sub>m</sub> at which any significant charge degradation of dielectric is not observed. Introduction of the measurement modes give an opportunity to monitor a change of the charge state of thin gate dielectric during all the test. The suggested test is started similar to Bounded J-Ramp method and then in order to raise the monitoring speed, the value of bounded current <i>J</i><sub>b</sub> could be step wisely increased over certain time intervals which are much longer in time in comparison with J-Ramp method. As a result, the charge injection into the gate dielectric could be implemented under multiple <i>J</i><sub>b</sub> values. This test algorithm gives an opportunity to greatly enhance functional capabilities of the existing test methods and the suggested technique raises speed to test.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"55 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600851
A. Rogozhin, A. Miakonkikh, K. Rudenko
Abstract
Ruthenium thin films were deposited by plasma enhanced atomic layer deposition (PEALD) using Ru(EtCp)2 and oxygen plasma on the modified silicon surface and SiO2/Si substrates. The substrate temperature has a significant impact on film growth. The GXRD and SIMS analysis have shown that at the substrate temperature T = 375°C there is a sharp change in the mechanisms of surface reactions, which leads to a change in the film composition from RuO2 at low temperatures to a pure Ru film at higher temperatures. This was confirmed by measurements of the electrical resistivity of Ru-based films. The lowest surface roughness ~1.5 nm was obtained at a film thickness of 29 nm deposited at 375°C on a SiO2/Si-substrate. The measured resistivity of the Ru film was 18–19 μΩ cm. Issues regarding the plasma-chemical etching of ruthenium and the spin-on of a low-k dielectric onto arrays of lines are taken into account.
{"title":"Ruthenium for Subtractive and Semi-Damascene Processes of Interconnects Formation","authors":"A. Rogozhin, A. Miakonkikh, K. Rudenko","doi":"10.1134/s1063739723600851","DOIUrl":"https://doi.org/10.1134/s1063739723600851","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Ruthenium thin films were deposited by plasma enhanced atomic layer deposition (PEALD) using Ru(EtCp)<sub>2</sub> and oxygen plasma on the modified silicon surface and SiO<sub>2</sub>/Si substrates. The substrate temperature has a significant impact on film growth. The GXRD and SIMS analysis have shown that at the substrate temperature <i>T</i> = 375°C there is a sharp change in the mechanisms of surface reactions, which leads to a change in the film composition from RuO<sub>2</sub> at low temperatures to a pure Ru film at higher temperatures. This was confirmed by measurements of the electrical resistivity of Ru-based films. The lowest surface roughness ~1.5 nm was obtained at a film thickness of 29 nm deposited at 375°C on a SiO<sub>2</sub>/Si-substrate. The measured resistivity of the Ru film was 18–19 μΩ cm. Issues regarding the plasma-chemical etching of ruthenium and the spin-on of a low-k dielectric onto arrays of lines are taken into account.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"148 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600577
A. Yu. Chernyavskiy, B. I. Bantysh
Abstract
QAOA (Quantum Approximate Optimization Algorithms) is one of the most promising algorithms of Noisy Intermediate Scale Quantum (NISQ) era. The standard approach to QAOA involves the use of a hybrid quantum-classical optimization, although this approach was not considered as the main one in the original paper on QAOA. Recently, a new approach has emerged based on the hypothesis that optimal circuit parameters (angles) are close for a wide class of problems. However, the search for fixed angles itself remains a challenge with different approaches. We propose one specific method based on the use of a fixed training set and the special metric associated with increasing the probability of a correct answer. We carry out the analysis of the proposed method performance on the unweighted Max-Cut problems and random weighted QUBO (Quadratic Unconstrained Binary Optimization) problems of the special type.
{"title":"A Method to Compute QAOA Fixed Angles","authors":"A. Yu. Chernyavskiy, B. I. Bantysh","doi":"10.1134/s1063739723600577","DOIUrl":"https://doi.org/10.1134/s1063739723600577","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>QAOA (Quantum Approximate Optimization Algorithms) is one of the most promising algorithms of Noisy Intermediate Scale Quantum (NISQ) era. The standard approach to QAOA involves the use of a hybrid quantum-classical optimization, although this approach was not considered as the main one in the original paper on QAOA. Recently, a new approach has emerged based on the hypothesis that optimal circuit parameters (angles) are close for a wide class of problems. However, the search for fixed angles itself remains a challenge with different approaches. We propose one specific method based on the use of a fixed training set and the special metric associated with increasing the probability of a correct answer. We carry out the analysis of the proposed method performance on the unweighted Max-Cut problems and random weighted QUBO (Quadratic Unconstrained Binary Optimization) problems of the special type.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"120 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140197005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s106373972360067x
A. Vasiliev
Abstract
Quantum hashing is one of the techniques that allow to construct space-efficient quantum algorithms and protocols. We present a construction that allows to make it extremely time efficient. Our approach is based on the shallow implementation of the quantum fingerprinting technique but uses additional circuit identities specific to the quantum hash function for the cyclic group. The resulting algorithm is equivalent to the one we have implemented earlier using single-photon states with orbital angular momentum encoding.
{"title":"Constant-Depth Algorithm for Quantum Hashing","authors":"A. Vasiliev","doi":"10.1134/s106373972360067x","DOIUrl":"https://doi.org/10.1134/s106373972360067x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Quantum hashing is one of the techniques that allow to construct space-efficient quantum algorithms and protocols. We present a construction that allows to make it extremely time efficient. Our approach is based on the shallow implementation of the quantum fingerprinting technique but uses additional circuit identities specific to the quantum hash function for the cyclic group. The resulting algorithm is equivalent to the one we have implemented earlier using single-photon states with orbital angular momentum encoding.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"121 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140197000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600437
D. Shaposhnikov, L. Fedichkin
Abstract—
Overview of some recent research advancements in ultracold Rydberg atoms with laser-cooled trapped ions control is presented. We show also an effective way to create multi-q-bit gates on such a system. We demonstrate how to implement a gate similar to C-PHASE and discuss the prospects of atom-ion coupling approach.
{"title":"Hybrid Atom-Ion Quantum Gate Engineering","authors":"D. Shaposhnikov, L. Fedichkin","doi":"10.1134/s1063739723600437","DOIUrl":"https://doi.org/10.1134/s1063739723600437","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract—</h3><p>Overview of some recent research advancements in ultracold Rydberg atoms with laser-cooled trapped ions control is presented. We show also an effective way to create multi-q-bit gates on such a system. We demonstrate how to implement a gate similar to C-PHASE and discuss the prospects of atom-ion coupling approach.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"109 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-21DOI: 10.1134/s1063739723600395
A. V. Timakov, V. I. Shevyakov
Abstract
This research is devoted to the study of the influence of rhenium admixture on the mechanical and conductive properties of tungsten thin films. The results of the study of adhesive films properties are obtained. For pure tungsten, tungsten–rhenium 5% and tungsten–rhenium 20% wires with a thickness of 0.25 μm studies of the structure and elemental analysis at the grain boundary and in the grain itself were carried out. An explanation of the reason for improving the mechanical properties of tungsten thin films when rhenium is added to their composition (“rhenium effect”) is proposed. A study of the mechanical stresses level has been carried out, which corresponds to the theoretically obtained data. The resistivity was measured for pure tungsten films and films with alloying rhenium of 5, 10, 15 and 20%. Films that meet the requirements of industry standards have been obtained.
{"title":"Rhenium Effect in Thin Films and Wires of Tungsten–Rhenium Alloys","authors":"A. V. Timakov, V. I. Shevyakov","doi":"10.1134/s1063739723600395","DOIUrl":"https://doi.org/10.1134/s1063739723600395","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>This research is devoted to the study of the influence of rhenium admixture on the mechanical and conductive properties of tungsten thin films. The results of the study of adhesive films properties are obtained. For pure tungsten, tungsten–rhenium 5% and tungsten–rhenium 20% wires with a thickness of 0.25 μm studies of the structure and elemental analysis at the grain boundary and in the grain itself were carried out. An explanation of the reason for improving the mechanical properties of tungsten thin films when rhenium is added to their composition (“rhenium effect”) is proposed. A study of the mechanical stresses level has been carried out, which corresponds to the theoretically obtained data. The resistivity was measured for pure tungsten films and films with alloying rhenium of 5, 10, 15 and 20%. Films that meet the requirements of industry standards have been obtained.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-05DOI: 10.1134/s1063739723080036
D. P. Radchenko, I. V. Zaporotskova, L. V. Kozhitov, P. A. Zaporotskov, A. V. Popkova, V. G. Kosushkin
Abstract—
At present, the electromagnetic characteristics of various materials, including polymeric materials, are being widely studied with the aim of using them as radio-absorbing coatings in electronics products. One such material is pyrolyzed polyacrylonitrile (PPAN). This article considers a model of electromagnetic wave absorption by PPAN layers with electrical conductivity of 72 and 180 S/m and a layer width of 0.15 to 2 mm, including those containing a metal filler (the so-called PPAN-based metal composite), in the frequency range of 3–50 GHz. The experimental data are compared with the data obtained in the course of simulation in terms of parameters such as the reflection, transmission, and absorption indices. Modeling is done in the software package COMSOL Multiphysics.
{"title":"Simulation of the Radio Absorbing Properties of Pyrolyzed Polyacrylonitrile in the Frequency Range from 3 to 50 GHz","authors":"D. P. Radchenko, I. V. Zaporotskova, L. V. Kozhitov, P. A. Zaporotskov, A. V. Popkova, V. G. Kosushkin","doi":"10.1134/s1063739723080036","DOIUrl":"https://doi.org/10.1134/s1063739723080036","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>—</h3><p>At present, the electromagnetic characteristics of various materials, including polymeric materials, are being widely studied with the aim of using them as radio-absorbing coatings in electronics products. One such material is pyrolyzed polyacrylonitrile (PPAN). This article considers a model of electromagnetic wave absorption by PPAN layers with electrical conductivity of 72 and 180 S/m and a layer width of 0.15 to 2 mm, including those containing a metal filler (the so-called PPAN-based metal composite), in the frequency range of 3–50 GHz. The experimental data are compared with the data obtained in the course of simulation in terms of parameters such as the reflection, transmission, and absorption indices. Modeling is done in the software package COMSOL Multiphysics.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140032992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-05DOI: 10.1134/s1063739723080024
A. Yu. Morozov, K. K. Abgaryan, D. L. Reviznikov
Abstract
The issues of simulation modeling of an analog impulse neural network based on memristive elements in the problem of pattern recognition are studied. Simulation modeling allows us to configure the network at the level of a mathematical model, and subsequently use the obtained parameters directly in the process of operation. The network model is given as a dynamic system, which can consist of tens or hundreds of thousands of ordinary differential equations. Naturally, there is a need for an efficient and parallel implementation of an appropriate simulation model. Open multiprocessing (OpenMP) is used as the technology for parallelizing calculations, since it allows us to easily create multithreaded applications in various programming languages. The efficiency of parallelization is evaluated on the problem of modeling the process of training the network to recognize a set of five images of a size of 128 by 128 pixels, which leads to the solution of about 80 000 differential equations. In this problem, the calculations are accelerated by a factor of over six. According to the experimental data, the operating character of memristors is stochastic, as shown by the scatter in the current-voltage characteristics (VACs) when switching between high-resistance and low-resistance states. To take this feature into account, a memristor model with interval parameters is used, which gives upper and lower limits on the values of interest, and encloses the experimental curves in corridors. When simulating the operation of the entire analog self-learning impulse neural network, in each epoch of training, the parameters of the memristors are set randomly from the selected intervals. This approach makes it possible to dispense with the use of a stochastic mathematical apparatus, thereby further reducing computational costs.
{"title":"Simulation Modeling of an Analog Impulse Neural Network Based on a Memristor Crossbar Using Parallel Computing Technologies","authors":"A. Yu. Morozov, K. K. Abgaryan, D. L. Reviznikov","doi":"10.1134/s1063739723080024","DOIUrl":"https://doi.org/10.1134/s1063739723080024","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The issues of simulation modeling of an analog impulse neural network based on memristive elements in the problem of pattern recognition are studied. Simulation modeling allows us to configure the network at the level of a mathematical model, and subsequently use the obtained parameters directly in the process of operation. The network model is given as a dynamic system, which can consist of tens or hundreds of thousands of ordinary differential equations. Naturally, there is a need for an efficient and parallel implementation of an appropriate simulation model. Open multiprocessing (OpenMP) is used as the technology for parallelizing calculations, since it allows us to easily create multithreaded applications in various programming languages. The efficiency of parallelization is evaluated on the problem of modeling the process of training the network to recognize a set of five images of a size of 128 by 128 pixels, which leads to the solution of about 80 000 differential equations. In this problem, the calculations are accelerated by a factor of over six. According to the experimental data, the operating character of memristors is stochastic, as shown by the scatter in the current-voltage characteristics (VACs) when switching between high-resistance and low-resistance states. To take this feature into account, a memristor model with interval parameters is used, which gives upper and lower limits on the values of interest, and encloses the experimental curves in corridors. When simulating the operation of the entire analog self-learning impulse neural network, in each epoch of training, the parameters of the memristors are set randomly from the selected intervals. This approach makes it possible to dispense with the use of a stochastic mathematical apparatus, thereby further reducing computational costs.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"71 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140032728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-15DOI: 10.1134/s1063739723070028
D. A. Abrameshin, E. D. Pozhidaev, V. S. Saenko, S. R. Tumkovskiy
Abstract
Spacecraft are affected by cosmic plasma electrons, which cause the electrification of their dielectric materials. As a result, electrostatic discharges occur, leading to failures in the operation of onboard radio electronics, reducing the period of the active existence of the spacecraft. The use of composite polymer dielectrics with increased conductivity is a promising method for protecting against the effects of electrostatic discharges. This paper presents the results of modeling the characteristics of a broadband amplifier made on a printed circuit board using a highly conductive composite dielectric. Resistances are added to the model of the ongoing electrical processes that characterize current leakage from the circuit nodes to the zero conductor due to the decrease in the specific volume resistance of the printed circuit board’s material. A computer simulation of a broadband amplifier and an experimental study of its performance in the operating frequency band of 0.5–70 MHz are carried out. It is shown that a change in the bandwidth and gain occurs only when the conductivity becomes higher than 6 × 10–4 Ohm–1 m–1. The results of an experimental study of a broadband amplifier show that the proposed model for accounting for the specific volume resistance of the printed circuit board material adequately describes its characteristics. The fact that even with a conductivity of 10–9 Ohm–1 m–1 electrostatic discharges are excluded indicates the possibility of protecting broadband amplifiers as part of the radio-electronic devices of spacecraft from electrification when using composite dielectrics of increased conductivity.
{"title":"Modeling a Broadband Amplifier on a Printed Circuit Board with an Increased Conductivity Dielectric","authors":"D. A. Abrameshin, E. D. Pozhidaev, V. S. Saenko, S. R. Tumkovskiy","doi":"10.1134/s1063739723070028","DOIUrl":"https://doi.org/10.1134/s1063739723070028","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Spacecraft are affected by cosmic plasma electrons, which cause the electrification of their dielectric materials. As a result, electrostatic discharges occur, leading to failures in the operation of onboard radio electronics, reducing the period of the active existence of the spacecraft. The use of composite polymer dielectrics with increased conductivity is a promising method for protecting against the effects of electrostatic discharges. This paper presents the results of modeling the characteristics of a broadband amplifier made on a printed circuit board using a highly conductive composite dielectric. Resistances are added to the model of the ongoing electrical processes that characterize current leakage from the circuit nodes to the zero conductor due to the decrease in the specific volume resistance of the printed circuit board’s material. A computer simulation of a broadband amplifier and an experimental study of its performance in the operating frequency band of 0.5–70 MHz are carried out. It is shown that a change in the bandwidth and gain occurs only when the conductivity becomes higher than 6 × 10<sup>–4</sup> Ohm<sup>–1</sup> m<sup>–1</sup>. The results of an experimental study of a broadband amplifier show that the proposed model for accounting for the specific volume resistance of the printed circuit board material adequately describes its characteristics. The fact that even with a conductivity of 10<sup>–9</sup> Ohm<sup>–1</sup> m<sup>–1</sup> electrostatic discharges are excluded indicates the possibility of protecting broadband amplifiers as part of the radio-electronic devices of spacecraft from electrification when using composite dielectrics of increased conductivity.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139770907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-15DOI: 10.1134/s106373972307003x
K. A. Alimagadov, S. V. Umnyashkin
Abstract—
Computer vision algorithms are widely used in solving a number of applied problems. The correct operation of such algorithms depends on the photo and video data that they receive at the input, which are subject to the effect of noise; hence, noise suppression is an important stage in low-level digital image processing. In this work, the Wiener filtering of normal white noise with using neural networks in the domain of the discrete wavelet transform is studied. The architecture of the networks and the algorithm developed for their application for filtering in the domain of a discrete wavelet transform are described. The proposed algorithm is tested on the BSDS500 dataset at various noise levels. The filtering quality is evaluated by the calculated signal-to-noise ratio (SNR) and structural similarity index (SSIM) values. The results of processing test images indicate that the developed algorithm is superior in noise reduction quality to most of the other considered filters, including Wiener filtering without the use of neural networks in the domain of the discrete wavelet transform.
{"title":"White Noise Suppression Based on Wiener Filtering Using Neural Network Technologies in the Domain of the Discrete Wavelet Transform","authors":"K. A. Alimagadov, S. V. Umnyashkin","doi":"10.1134/s106373972307003x","DOIUrl":"https://doi.org/10.1134/s106373972307003x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>—</h3><p>Computer vision algorithms are widely used in solving a number of applied problems. The correct operation of such algorithms depends on the photo and video data that they receive at the input, which are subject to the effect of noise; hence, noise suppression is an important stage in low-level digital image processing. In this work, the Wiener filtering of normal white noise with using neural networks in the domain of the discrete wavelet transform is studied. The architecture of the networks and the algorithm developed for their application for filtering in the domain of a discrete wavelet transform are described. The proposed algorithm is tested on the BSDS500 dataset at various noise levels. The filtering quality is evaluated by the calculated signal-to-noise ratio (SNR) and structural similarity index (SSIM) values. The results of processing test images indicate that the developed algorithm is superior in noise reduction quality to most of the other considered filters, including Wiener filtering without the use of neural networks in the domain of the discrete wavelet transform.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139771330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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