Pub Date : 2021-09-13DOI: 10.23919/empc53418.2021.9584988
D. Seehase, A. Novikov, Jens Kruggel, Fred Lange, M. Nowottnick
Induction soldering is a widely used process for the interconnection of construction parts. This technology allows a local heating process without putting the whole module into the oven, which minimizes the thermal load and thus improves the reliability of the electronic module and at the same time reduces the energy consumption of the soldering process. In this study, the internal heating of solder material is realized by induction losses within a suitable susceptor material. Therefore, a variety of ferromagnetic materials was examined as susceptor materials and different geometries and application methods were investigated. The soldering process is demonstrated at a laboratory induction setup where a controlled reflow soldering profile was applied.
{"title":"Induction Soldering Process with Integrated Susceptors","authors":"D. Seehase, A. Novikov, Jens Kruggel, Fred Lange, M. Nowottnick","doi":"10.23919/empc53418.2021.9584988","DOIUrl":"https://doi.org/10.23919/empc53418.2021.9584988","url":null,"abstract":"Induction soldering is a widely used process for the interconnection of construction parts. This technology allows a local heating process without putting the whole module into the oven, which minimizes the thermal load and thus improves the reliability of the electronic module and at the same time reduces the energy consumption of the soldering process. In this study, the internal heating of solder material is realized by induction losses within a suitable susceptor material. Therefore, a variety of ferromagnetic materials was examined as susceptor materials and different geometries and application methods were investigated. The soldering process is demonstrated at a laboratory induction setup where a controlled reflow soldering profile was applied.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125558840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.23919/empc53418.2021.9584953
Yong Zhang, Chengqun Yu, Fei Yang, Johan Liu
A thin film Gold/Platinum/Titanium (Au/Pt/Ti) - based microheater with pectination construction and a four-point probe was fabricated on a silica substrate. A standard lithography process was used to transfer the circuit pattern onto the substrate, and then Au/Pt/Ti was deposited on the substrate by an evaporator. Standard calibration was carried out at various temperatures, which can be obtained the relationship between the temperature and the resistance of the microheater, the results show that the Au/Pt/Ti-based microheater has a good linear relationship between the temperature and the resistance, indicating the microheater can also be used as a temperature sensor. Furthermore, the effects of different input powers, the geometry, and the thickness of the thin-film metals of the microheater were investigated and discussed. Finally, a finite element model was set up to see the temperature distribution of the microheater after the electric potential is applied.
{"title":"Thermal Analysis of An Au/Pt/Ti-Based Microheater","authors":"Yong Zhang, Chengqun Yu, Fei Yang, Johan Liu","doi":"10.23919/empc53418.2021.9584953","DOIUrl":"https://doi.org/10.23919/empc53418.2021.9584953","url":null,"abstract":"A thin film Gold/Platinum/Titanium (Au/Pt/Ti) - based microheater with pectination construction and a four-point probe was fabricated on a silica substrate. A standard lithography process was used to transfer the circuit pattern onto the substrate, and then Au/Pt/Ti was deposited on the substrate by an evaporator. Standard calibration was carried out at various temperatures, which can be obtained the relationship between the temperature and the resistance of the microheater, the results show that the Au/Pt/Ti-based microheater has a good linear relationship between the temperature and the resistance, indicating the microheater can also be used as a temperature sensor. Furthermore, the effects of different input powers, the geometry, and the thickness of the thin-film metals of the microheater were investigated and discussed. Finally, a finite element model was set up to see the temperature distribution of the microheater after the electric potential is applied.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126112513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.23919/empc53418.2021.9584994
David Weyers, K. Nieweglowski, L. Lorenz, K. Bock
This paper describes simulation, technology- and process development for the manufacturing of single mode polymeric wave guides by photolithography. Simulations for single mode operation in O- and C-band are carried out. Waveguides are directly patterned with UV-photolithography using Ormocere®-material. Fiber to waveguide coupling and nearfield are characterized.
{"title":"Analysis of polymeric singlemode waveguides for inter-system communication","authors":"David Weyers, K. Nieweglowski, L. Lorenz, K. Bock","doi":"10.23919/empc53418.2021.9584994","DOIUrl":"https://doi.org/10.23919/empc53418.2021.9584994","url":null,"abstract":"This paper describes simulation, technology- and process development for the manufacturing of single mode polymeric wave guides by photolithography. Simulations for single mode operation in O- and C-band are carried out. Waveguides are directly patterned with UV-photolithography using Ormocere®-material. Fiber to waveguide coupling and nearfield are characterized.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121559959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.23919/empc53418.2021.9584963
Erick Franieck, M. Fleischmann, O. Hölck, M. Schneider-Ramelow
In the past years, epoxy resin molding compounds (EMCs) have gained in importance as packaging material in the field of electrification due to their very good mechanical and chemical resistance and electrical insulation properties. Forthcoming trends, such as the use of silicon carbide and ceramics, are accelerating developments and are leading to new requirements for encapsulation materials in terms of high temperature resistance and stability. A focus here is on epoxy resin molding compounds with high glass transition temperatures, which as a consequence of the limited manufacturing conditions of electronic components must be cured below their maximum glass transition temperature. As a result, setting-up the ideal curing process to achieve the desired material properties poses quite a challenge, making therefore the study of the cure behavior under process-related conditions a key factor to achieve the desired material properties. The dielectric analysis (DEA) is a powerful measurement technique well suited for in-situ monitoring of EMC curing in the field of direct packaging of electronic parts. However, it possesses one major drawback. The DEA has a systematic temperature dependence that hinders the determination of the cure state as it is usually known from standard offline measurement techniques such as thermomechanical analysis (TMA), or dynamic-scanning-calorimetry (DSC). In this work we present an empirical approach how to compensate the temperature influence of the dielectric analysis (DEA) for a commercially available high glass transition temperature (Tg) (higher $200^{circ}mathrm{C})$ EMC. This proposed normalization method allows to gain information about the cure state of an EMC under near process conditions what would already be a great advantage considering the future trends in electronic packaging technology. In addition, it opens new possibilities on how to expand the application of the DEA, e.g. kinetic cure characterization. The detailed material characterization and understanding can also lead to manufacturing optimization in terms of cost and development such as cycle times optimization and shorter development times.
{"title":"Inline cure monitoring of epoxy resin by dielectric analysis","authors":"Erick Franieck, M. Fleischmann, O. Hölck, M. Schneider-Ramelow","doi":"10.23919/empc53418.2021.9584963","DOIUrl":"https://doi.org/10.23919/empc53418.2021.9584963","url":null,"abstract":"In the past years, epoxy resin molding compounds (EMCs) have gained in importance as packaging material in the field of electrification due to their very good mechanical and chemical resistance and electrical insulation properties. Forthcoming trends, such as the use of silicon carbide and ceramics, are accelerating developments and are leading to new requirements for encapsulation materials in terms of high temperature resistance and stability. A focus here is on epoxy resin molding compounds with high glass transition temperatures, which as a consequence of the limited manufacturing conditions of electronic components must be cured below their maximum glass transition temperature. As a result, setting-up the ideal curing process to achieve the desired material properties poses quite a challenge, making therefore the study of the cure behavior under process-related conditions a key factor to achieve the desired material properties. The dielectric analysis (DEA) is a powerful measurement technique well suited for in-situ monitoring of EMC curing in the field of direct packaging of electronic parts. However, it possesses one major drawback. The DEA has a systematic temperature dependence that hinders the determination of the cure state as it is usually known from standard offline measurement techniques such as thermomechanical analysis (TMA), or dynamic-scanning-calorimetry (DSC). In this work we present an empirical approach how to compensate the temperature influence of the dielectric analysis (DEA) for a commercially available high glass transition temperature (Tg) (higher $200^{circ}mathrm{C})$ EMC. This proposed normalization method allows to gain information about the cure state of an EMC under near process conditions what would already be a great advantage considering the future trends in electronic packaging technology. In addition, it opens new possibilities on how to expand the application of the DEA, e.g. kinetic cure characterization. The detailed material characterization and understanding can also lead to manufacturing optimization in terms of cost and development such as cycle times optimization and shorter development times.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114976593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.23919/empc53418.2021.9584996
D. N. Wright, A. Liberale, A. Vogl, N. Aakvaag, G. Savelli, F. Filhol, R. Hodot
The accuracy of MEMS sensing devices can be greatly increased by controlling the operating temperature. This work is part of a project where the goal is to develop an active thermal control unit (TCU) capable of regulating a packaged MEMS device at 70°C ± 1 °C in the temperature range from -46 °C to 90 °C. To accomplish this, a thermoelectric cooler (TEC) is sandwiched between the MEMS package and a heat sink with a thermal interface material (TIM). An in-house tool has been used to calculate the optimum TEC parameters, ending up with 72 legs of 1 mm x 1 mm x 2 mm dimension (l x w x h). Simulations in COMSOL show that the TEC can reach the target temperature within the required time and power consumption. In this work we have built a full demonstrator using a thermal test chip (TTC) to represent a MEMS. Tests done in a climatic chamber show large performance discrepancies compared to the simulations. The TEC manages to keep the target temperature when the ambient temperature is below 70 °C, but does not manage when the temperature is 90 °C. This is due to the insufficient heat dissipation from the hot side of the TEC.
通过控制工作温度，可以大大提高MEMS传感器件的精度。这项工作是一个项目的一部分，该项目的目标是开发一种主动热控制单元(TCU)，能够在-46°C至90°C的温度范围内，在70°C±1°C下调节封装的MEMS器件。为了实现这一目标，将热电冷却器(TEC)夹在MEMS封装和带有热界面材料(TIM)的散热器之间。使用内部工具计算最佳TEC参数，最终得到72个尺寸为1mm × 1mm × 2mm (1 × w × h)的支腿。COMSOL中的模拟表明，TEC可以在所需的时间和功耗内达到目标温度。在这项工作中，我们使用热测试芯片(TTC)构建了一个完整的演示器来表示MEMS。与模拟相比，在气候室中进行的测试显示出很大的性能差异。当环境温度低于70℃时，TEC能够保持目标温度，但当环境温度高于90℃时，TEC无法保持目标温度。这是由于TEC热侧散热不足造成的。
{"title":"Thermal management of MEMS element with thermoelectric-cooler","authors":"D. N. Wright, A. Liberale, A. Vogl, N. Aakvaag, G. Savelli, F. Filhol, R. Hodot","doi":"10.23919/empc53418.2021.9584996","DOIUrl":"https://doi.org/10.23919/empc53418.2021.9584996","url":null,"abstract":"The accuracy of MEMS sensing devices can be greatly increased by controlling the operating temperature. This work is part of a project where the goal is to develop an active thermal control unit (TCU) capable of regulating a packaged MEMS device at 70°C ± 1 °C in the temperature range from -46 °C to 90 °C. To accomplish this, a thermoelectric cooler (TEC) is sandwiched between the MEMS package and a heat sink with a thermal interface material (TIM). An in-house tool has been used to calculate the optimum TEC parameters, ending up with 72 legs of 1 mm x 1 mm x 2 mm dimension (l x w x h). Simulations in COMSOL show that the TEC can reach the target temperature within the required time and power consumption. In this work we have built a full demonstrator using a thermal test chip (TTC) to represent a MEMS. Tests done in a climatic chamber show large performance discrepancies compared to the simulations. The TEC manages to keep the target temperature when the ambient temperature is below 70 °C, but does not manage when the temperature is 90 °C. This is due to the insufficient heat dissipation from the hot side of the TEC.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132382000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.23919/empc53418.2021.9584972
S. Pickard, Todd G. Johnson, Ken Kuang
Novel copper-diamond materials containing particulate dispersions of diamond within a copper alloy matrix have been produced as ultra high thermal conductivity next-generation rocket nozzle liner materials. Synthesis techniques include hot pressing and spark plasma sintering, which are capable of scale up to full-size production parts. The materials have been evaluated for thermal cycling resistance and ease of manufacturing. The results indicate great promise of these materials and acceptable economics to replace existing state-of the-art monolithic copper alloys such as Gr Cop 84 and NARloyZ in high temperature thermal management applications.
{"title":"Development of High Thermal Conductivity Copper Alloys with Diamond Particle Additions","authors":"S. Pickard, Todd G. Johnson, Ken Kuang","doi":"10.23919/empc53418.2021.9584972","DOIUrl":"https://doi.org/10.23919/empc53418.2021.9584972","url":null,"abstract":"Novel copper-diamond materials containing particulate dispersions of diamond within a copper alloy matrix have been produced as ultra high thermal conductivity next-generation rocket nozzle liner materials. Synthesis techniques include hot pressing and spark plasma sintering, which are capable of scale up to full-size production parts. The materials have been evaluated for thermal cycling resistance and ease of manufacturing. The results indicate great promise of these materials and acceptable economics to replace existing state-of the-art monolithic copper alloys such as Gr Cop 84 and NARloyZ in high temperature thermal management applications.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116820843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.23919/empc53418.2021.9584945
O. Rusanen, Suvi Kela, P. Korhonen, P. Niskala, Tapio Rautiov, Tomi Simula
IMSE (Injection Molded Structural Electronics) solutions are made by integrating and encapsulating printed electronics and standard electronic components within durable 3D injection-molded plastics. Part of the technology development is to ensure that electric components and materials, such as polymer substrates, functional inks, and surface mounting adhesives, form a reliable solution. The technology verification includes stringent reliability testing. The used tests are rapid change of temperature, high temperature ageing and steady-state temperature-humidity. Here we present an additional testing case: 3000 cycles of thermal cycling ($- 30^{circ}mathrm{C}dots$. $80^{circ}mathrm{C})$.
{"title":"Reliable Smart Molded Structures","authors":"O. Rusanen, Suvi Kela, P. Korhonen, P. Niskala, Tapio Rautiov, Tomi Simula","doi":"10.23919/empc53418.2021.9584945","DOIUrl":"https://doi.org/10.23919/empc53418.2021.9584945","url":null,"abstract":"IMSE (Injection Molded Structural Electronics) solutions are made by integrating and encapsulating printed electronics and standard electronic components within durable 3D injection-molded plastics. Part of the technology development is to ensure that electric components and materials, such as polymer substrates, functional inks, and surface mounting adhesives, form a reliable solution. The technology verification includes stringent reliability testing. The used tests are rapid change of temperature, high temperature ageing and steady-state temperature-humidity. Here we present an additional testing case: 3000 cycles of thermal cycling ($- 30^{circ}mathrm{C}dots$. $80^{circ}mathrm{C})$.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134409347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.23919/empc53418.2021.9584949
Serhat Y. Çekiç, Arif Ergen, Alperen Tunç
In this paper, the high-frequency behavior of various bondwire types is explained in terms of diameter and interconnect number up to millimeter-wave frequencies. The inductive effect of several bondwires which are used in high-frequency circuits, was calculated by considering height, angle, and length. After these calculations, 3D models and electromagnetic simulations of these interconnections were realized with a computer-aided design tool. Then, bondwires which have different characteristics, are implemented on alumina transmission lines. Furthermore, S-parameters were measured with a 2-port network analyzer using a probe station. Measured insertion loss and reflection values were compared with 3D electromagnetic simulation results, in order to obtain conceivable interconnection.
{"title":"The Performance Effects of Bondwire Characteristics Up to mmWave Frequencies","authors":"Serhat Y. Çekiç, Arif Ergen, Alperen Tunç","doi":"10.23919/empc53418.2021.9584949","DOIUrl":"https://doi.org/10.23919/empc53418.2021.9584949","url":null,"abstract":"In this paper, the high-frequency behavior of various bondwire types is explained in terms of diameter and interconnect number up to millimeter-wave frequencies. The inductive effect of several bondwires which are used in high-frequency circuits, was calculated by considering height, angle, and length. After these calculations, 3D models and electromagnetic simulations of these interconnections were realized with a computer-aided design tool. Then, bondwires which have different characteristics, are implemented on alumina transmission lines. Furthermore, S-parameters were measured with a 2-port network analyzer using a probe station. Measured insertion loss and reflection values were compared with 3D electromagnetic simulation results, in order to obtain conceivable interconnection.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125878659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.23919/empc53418.2021.9584947
S. Stoukatch, N. André, F. Dupont, Jean-Michel Redouté, D. Flandre
We have developed a straightforward die-level thinning process suitable for Silicon-On-Insulator (SOI) dies. The process has been demonstrated on SOI CMOS die assembled on rigid and flexible PCBs using previously-developed anisotropic conductive adhesive flip-chip method. Unlike standard wafer-level thinning processes, in the demonstrated process the full thickness SOI die is directly mounted on PCB and after that thinned. The demonstrated process is simple and robust; it comprises fewer process steps compared to conventional die thinning process. The ultra-thinning process has no effects on the assembly integrity and device performance.
{"title":"Ultra-Thinned Individual SOI Die ACF FC Bonded on Rigid and Flex PCB","authors":"S. Stoukatch, N. André, F. Dupont, Jean-Michel Redouté, D. Flandre","doi":"10.23919/empc53418.2021.9584947","DOIUrl":"https://doi.org/10.23919/empc53418.2021.9584947","url":null,"abstract":"We have developed a straightforward die-level thinning process suitable for Silicon-On-Insulator (SOI) dies. The process has been demonstrated on SOI CMOS die assembled on rigid and flexible PCBs using previously-developed anisotropic conductive adhesive flip-chip method. Unlike standard wafer-level thinning processes, in the demonstrated process the full thickness SOI die is directly mounted on PCB and after that thinned. The demonstrated process is simple and robust; it comprises fewer process steps compared to conventional die thinning process. The ultra-thinning process has no effects on the assembly integrity and device performance.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128029343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.23919/empc53418.2021.9584967
Sri Krishna Bhogaraju, M. Schmid, H. Kotadia, F. Conti, G. Elger
Highly reliable microparticle sinter paste based on etched brass flakes is developed. A low temperature $(275^{circ}mathrm{C})$, low pressure (10 MPa) and fast (5 min) die-attach process resulting in sintered interconnects with an average shear strength of 60 MPa is realized. The use of polyethylene glycol 600 (PEG600) in the sinter paste formulation allows an in-situ reduction of copper oxide and sintering in an open bond chamber under a constant nitrogen flow with no influence of residual oxygen. Even under high stress thermal shock cycling, the sintered interconnects realized by the etched brass flakes show no drop in shear strength after 1000 cycles. Porosity of the interconnect affects the oxidation with time. In pure Cu flakes, stacking over each other, a preferential growth in (220) grain orientation is observed.
{"title":"Highly reliable die-attach bonding with etched brass flakes","authors":"Sri Krishna Bhogaraju, M. Schmid, H. Kotadia, F. Conti, G. Elger","doi":"10.23919/empc53418.2021.9584967","DOIUrl":"https://doi.org/10.23919/empc53418.2021.9584967","url":null,"abstract":"Highly reliable microparticle sinter paste based on etched brass flakes is developed. A low temperature $(275^{circ}mathrm{C})$, low pressure (10 MPa) and fast (5 min) die-attach process resulting in sintered interconnects with an average shear strength of 60 MPa is realized. The use of polyethylene glycol 600 (PEG600) in the sinter paste formulation allows an in-situ reduction of copper oxide and sintering in an open bond chamber under a constant nitrogen flow with no influence of residual oxygen. Even under high stress thermal shock cycling, the sintered interconnects realized by the etched brass flakes show no drop in shear strength after 1000 cycles. Porosity of the interconnect affects the oxidation with time. In pure Cu flakes, stacking over each other, a preferential growth in (220) grain orientation is observed.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121113182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：