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2011 IEEE Radio Frequency Integrated Circuits Symposium最新文献

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Towards cognitive built-in-self-test (BIST) for reconfigurable on-chip applications, and contact-less measurement 面向可重构芯片上应用的认知内置自检(BIST)和非接触式测量
Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940716
S. Wane, M. Ranaivoniarivo, B. Elkassir, C. Kelma, P. Gamand
This paper introduces the concept of cognitive wireless BIST system for reconfigurability of on-chip function blocks, towards contactless measurement and characterization of high frequency integrated systems. Proposed feasibility studies of cognitive BIST cover characterization of chip-to-chip noise interferences as function of wireless coupling-path attributes (wireless separation distance between emitter and receiver chips, injected power levels, Charge-Pump-Current). Study of BIST for reconfigurability of on-chip functions is conducted based on design of programmable automatic amplitude control (ALC) of PLL reference oscillators. Impacts of BIST circuits on system performances are evaluated based on simulation analysis and experimental verifications.
本文介绍了基于片上功能块可重构性的认知无线BIST系统的概念,旨在实现高频集成系统的非接触式测量和表征。提出的认知BIST可行性研究涵盖了芯片间噪声干扰作为无线耦合路径属性(发射器和接收器芯片之间的无线分离距离、注入功率水平、电荷-泵电流)函数的表征。在锁相环参考振荡器可编程自动幅度控制(ALC)设计的基础上,对片上函数可重构性的BIST进行了研究。在仿真分析和实验验证的基础上,评估了BIST电路对系统性能的影响。
{"title":"Towards cognitive built-in-self-test (BIST) for reconfigurable on-chip applications, and contact-less measurement","authors":"S. Wane, M. Ranaivoniarivo, B. Elkassir, C. Kelma, P. Gamand","doi":"10.1109/RFIC.2011.5940716","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940716","url":null,"abstract":"This paper introduces the concept of cognitive wireless BIST system for reconfigurability of on-chip function blocks, towards contactless measurement and characterization of high frequency integrated systems. Proposed feasibility studies of cognitive BIST cover characterization of chip-to-chip noise interferences as function of wireless coupling-path attributes (wireless separation distance between emitter and receiver chips, injected power levels, Charge-Pump-Current). Study of BIST for reconfigurability of on-chip functions is conducted based on design of programmable automatic amplitude control (ALC) of PLL reference oscillators. Impacts of BIST circuits on system performances are evaluated based on simulation analysis and experimental verifications.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131392065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 23 µA RF-powered transmitter for biomedical applications 用于生物医学应用的23µA射频发射机
Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940711
Fan Zhang, Matthew A. Stoneback, B. Otis
We propose a new tag architecture that employs an active transmitter to decouple the frequencies used for power and data telemetry. Receiving power at 918 MHz and transmitting data at 306 MHz eliminates the “self-jamming” problem presented to RFID readers, reducing the complexity of reader design. This scheme allows remote placement of the data receiver and extends the data transmission range. Our transmitter uses subharmonic injection-locking to avoid power hungry LO generation circuitry while eliminating the need for quartz crystals. The tag prototype was fabricated using a 0.13 µm CMOS process, occupying 0.3 mm2 active area. With an on-off keying (OOK) data rate of 4 Mbps, the 23 µA transmitter with an output power of −33 dBm achieves an energy efficiency of 10 pJ/bit, the best reported to date for such systems.
我们提出了一种新的标签架构,该架构采用有源发射器来解耦用于电力和数据遥测的频率。接收功率为918 MHz,传输数据为306 MHz,消除了RFID读写器的“自干扰”问题,降低了读写器设计的复杂性。该方案允许远程放置数据接收器并扩展数据传输范围。我们的发射机使用次谐波注入锁定,以避免耗电的LO产生电路,同时消除了对石英晶体的需求。该标签原型采用0.13 μ m CMOS工艺制作,占用0.3 mm2的有源面积。在开关键控(OOK)数据速率为4 Mbps的情况下,输出功率为- 33 dBm的23 μ A发射机实现了10 pJ/bit的能量效率,这是迄今为止此类系统中报道的最佳能效。
{"title":"A 23 µA RF-powered transmitter for biomedical applications","authors":"Fan Zhang, Matthew A. Stoneback, B. Otis","doi":"10.1109/RFIC.2011.5940711","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940711","url":null,"abstract":"We propose a new tag architecture that employs an active transmitter to decouple the frequencies used for power and data telemetry. Receiving power at 918 MHz and transmitting data at 306 MHz eliminates the “self-jamming” problem presented to RFID readers, reducing the complexity of reader design. This scheme allows remote placement of the data receiver and extends the data transmission range. Our transmitter uses subharmonic injection-locking to avoid power hungry LO generation circuitry while eliminating the need for quartz crystals. The tag prototype was fabricated using a 0.13 µm CMOS process, occupying 0.3 mm2 active area. With an on-off keying (OOK) data rate of 4 Mbps, the 23 µA transmitter with an output power of −33 dBm achieves an energy efficiency of 10 pJ/bit, the best reported to date for such systems.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114966216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Process compensated low power LO divider chain with asynchronous odd integer 50% duty cycle CML dividers 采用异步奇整数50%占空比CML分频器的过程补偿低功耗分频链
Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940659
Edward P. Coleman, S. Chakraborty, Walter A. Budziak, Theodore R. Blank, P. T. Røine
This paper illustrates the design of a process compensated bias for asynchronous CML dividers for a low power, high performance LO divide chain operating at 4Ghz of input RF frequency. The divider chain provides division by 4,8,12,16,20, and 24. It provides a differential CML level signal for the in-loop modulated transmitter, and 25% duty cycle non-overlapping rail to rail waveforms for I/Q receiver for driving passive mixer. Asynchronous dividers have been used to realize divide by 3 and 5 with 50% duty cycle, quadrature outputs. All the CML dividers use a process compensated bias to compensate for load resistor variation and tail current variation using dual analog feedback loops. Frabricated in 180nm CMOS technology, the divider chain operate over industrial temperature range (−40 to 90°C), and provide outputs in 138–960Mhz range, consuming 2.2mA from 1.8V regulated supply at the highest output frequency.
本文介绍了一种用于异步CML分频器的过程补偿偏置设计,用于工作在4Ghz输入射频频率下的低功耗、高性能的LO分频链。除法链提供4、8、12、16、20和24的除法。它为环内调制发射机提供差分CML电平信号,为驱动无源混频器的I/Q接收器提供25%占空比非重叠轨对轨波形。采用异步分频器实现了除3和除5的占空比为50%的正交输出。所有的CML分压器都使用过程补偿偏置来补偿负载电阻的变化和使用双模拟反馈回路的尾电流变化。分压器链采用180nm CMOS技术制造,可在工业温度范围(- 40至90°C)内工作,并提供138-960Mhz范围内的输出,在最高输出频率下,从1.8V稳压电源消耗2.2mA。
{"title":"Process compensated low power LO divider chain with asynchronous odd integer 50% duty cycle CML dividers","authors":"Edward P. Coleman, S. Chakraborty, Walter A. Budziak, Theodore R. Blank, P. T. Røine","doi":"10.1109/RFIC.2011.5940659","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940659","url":null,"abstract":"This paper illustrates the design of a process compensated bias for asynchronous CML dividers for a low power, high performance LO divide chain operating at 4Ghz of input RF frequency. The divider chain provides division by 4,8,12,16,20, and 24. It provides a differential CML level signal for the in-loop modulated transmitter, and 25% duty cycle non-overlapping rail to rail waveforms for I/Q receiver for driving passive mixer. Asynchronous dividers have been used to realize divide by 3 and 5 with 50% duty cycle, quadrature outputs. All the CML dividers use a process compensated bias to compensate for load resistor variation and tail current variation using dual analog feedback loops. Frabricated in 180nm CMOS technology, the divider chain operate over industrial temperature range (−40 to 90°C), and provide outputs in 138–960Mhz range, consuming 2.2mA from 1.8V regulated supply at the highest output frequency.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115054748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A unified model for on-chip CPWs with various types of ground shields 具有不同类型地屏蔽的片上cpw的统一模型
Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940663
Hongrui Wang, Dajie Zeng, Dongxu Yang, Li Zhang, Lei Zhang, Yan Wang, H. Qian, Zhiping Yu
Coplanar waveguides (CPW) are promising candidates for high quality passive devices in millimeter-wave frequency bands. In this paper, CPW transmission lines with and without ground shields have been designed and fabricated on 65nm CMOS technology. A physical-based model is proposed to describe the frequency-dependent per-unit-length L, C, R, and G parameters. Started from a standard CPW structure, influences of different kinds of ground shields have been analyzed and included into the general model. The accuracy of the model is confirmed by experimental results.
共面波导(CPW)是毫米波频段高质量无源器件的理想选择。本文在65nm CMOS技术上设计并制作了带地屏蔽和不带地屏蔽的CPW传输线。提出了一种基于物理的模型来描述频率相关的单位长度L、C、R和G参数。从标准CPW结构出发,分析了不同类型地屏蔽的影响,并将其纳入一般模型。实验结果证实了模型的准确性。
{"title":"A unified model for on-chip CPWs with various types of ground shields","authors":"Hongrui Wang, Dajie Zeng, Dongxu Yang, Li Zhang, Lei Zhang, Yan Wang, H. Qian, Zhiping Yu","doi":"10.1109/RFIC.2011.5940663","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940663","url":null,"abstract":"Coplanar waveguides (CPW) are promising candidates for high quality passive devices in millimeter-wave frequency bands. In this paper, CPW transmission lines with and without ground shields have been designed and fabricated on 65nm CMOS technology. A physical-based model is proposed to describe the frequency-dependent per-unit-length L, C, R, and G parameters. Started from a standard CPW structure, influences of different kinds of ground shields have been analyzed and included into the general model. The accuracy of the model is confirmed by experimental results.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122677672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS 一种w波段电流组合功率放大器,Psat为14.8dBm,最大PAE为9.4%
Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940619
Zhiwei Xu, Q. Gu, Mau-Chung Frank Chang
We present a 101–117GHz power amplifier (PA) using two way current power combiner in 65nm bulk CMOS. It delivers up to 14.8dBm saturated output power with over 14dB power gain and better than 9.4% power added efficiency (PAE), which also achieves better than 11.6dBm output P1dB. The PA features three stage transformer coupled differential architecture with integrated input and output baluns. To ensure the stability and improve efficiency, the PA first two stages adopt cascode structure and the last stage utilizes common source structure. A current power combiner is employed to combine the power from two separate PAs. The entire PA core occupies 0.106 mm2 chip area and dissipates about 200mW.
我们提出了一种采用双向电流合成器的101-117GHz功率放大器(PA)。它提供高达14.8dBm的饱和输出功率,功率增益超过14dB,功率附加效率(PAE)优于9.4%,也优于11.6dBm的输出P1dB。PA采用三级变压器耦合差分结构,集成输入和输出平衡。为了保证稳定性和提高效率,PA前两级采用级联码结构,最后一级采用共源结构。电流功率合并器用于将来自两个独立pa的功率组合在一起。整个PA芯的芯片面积为0.106 mm2,功耗约200mW。
{"title":"A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS","authors":"Zhiwei Xu, Q. Gu, Mau-Chung Frank Chang","doi":"10.1109/RFIC.2011.5940619","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940619","url":null,"abstract":"We present a 101–117GHz power amplifier (PA) using two way current power combiner in 65nm bulk CMOS. It delivers up to 14.8dBm saturated output power with over 14dB power gain and better than 9.4% power added efficiency (PAE), which also achieves better than 11.6dBm output P1dB. The PA features three stage transformer coupled differential architecture with integrated input and output baluns. To ensure the stability and improve efficiency, the PA first two stages adopt cascode structure and the last stage utilizes common source structure. A current power combiner is employed to combine the power from two separate PAs. The entire PA core occupies 0.106 mm2 chip area and dissipates about 200mW.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"23 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125085077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
A 100-3000MHz, up/ down-convert, +29dBm IIP3, 13dB NF, active mixer with integrated fractional-N PLL and VCO 100-3000MHz,上/下转换,+29dBm IIP3, 13dB NF,集成分数n锁相环和压控振荡器的有源混频器
Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940651
Iliana Fujimori-Chen, B. Walker, Roxann Broughton-Blanchard, E. Balboni
This paper presents a broadband, high-dynamic range, active mixer with integrated PLL and VCO. The synthesizer uses a programmable integer-n/fractional-n PLL to generate an LO signal with an in-band phase noise FOM of −223 dBc/Hz/Hz. The 100–3000MHz active mixer can be configured for up or down conversion. The mixer's linearity can be boosted from +25dBm to +29dBm by increasing the bias current, and optimized for a wide range of input frequencies through a variable capacitor setting. Designed in Si-Ge 0.25µm BiCMOS, the entire chip occupies 5.84mm2 and consumes 250mA from a 5V supply.
本文提出了一种集成锁相环和压控振荡器的宽带、高动态范围有源混频器。合成器采用可编程整数/分数n锁相环产生带内相位噪声FOM为- 223 dBc/Hz/Hz的LO信号。100-3000MHz有源混频器可配置为向上或向下转换。通过增加偏置电流,混合器的线性度可以从+25dBm提升到+29dBm,并通过可变电容设置优化了宽范围的输入频率。采用Si-Ge 0.25µm BiCMOS设计,整个芯片占地5.84mm2, 5V电源消耗250mA。
{"title":"A 100-3000MHz, up/ down-convert, +29dBm IIP3, 13dB NF, active mixer with integrated fractional-N PLL and VCO","authors":"Iliana Fujimori-Chen, B. Walker, Roxann Broughton-Blanchard, E. Balboni","doi":"10.1109/RFIC.2011.5940651","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940651","url":null,"abstract":"This paper presents a broadband, high-dynamic range, active mixer with integrated PLL and VCO. The synthesizer uses a programmable integer-n/fractional-n PLL to generate an LO signal with an in-band phase noise FOM of −223 dBc/Hz/Hz. The 100–3000MHz active mixer can be configured for up or down conversion. The mixer's linearity can be boosted from +25dBm to +29dBm by increasing the bias current, and optimized for a wide range of input frequencies through a variable capacitor setting. Designed in Si-Ge 0.25µm BiCMOS, the entire chip occupies 5.84mm2 and consumes 250mA from a 5V supply.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123342887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 1900MHz-band GSM-based clock-harvesting receiver with −87dBm sensitivity 1900mhz频段基于gsm的时钟采集接收机,灵敏度为- 87dBm
Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940630
Jonathan K. Brown, D. Wentzloff
A 0.13µm CMOS clock-harvesting receiver is presented which extracts a 21Hz clock embedded within the GSM standard for the wake-up of a wireless sensor network. In active mode, the receiver achieves −87dBm sensitivity with 57µs of jitter at the output while consuming 126µW. The receiver is optimized for heavy duty-cycling with a sleep-mode power consumption of only 81pW.
提出了一种0.13 μ m CMOS时钟采集接收器,该接收器提取嵌入GSM标准的21Hz时钟,用于无线传感器网络的唤醒。在主动模式下,接收器达到−87dBm灵敏度,输出抖动为57µs,功耗为126µW。该接收器针对重占空比进行了优化,睡眠模式功耗仅为81pW。
{"title":"A 1900MHz-band GSM-based clock-harvesting receiver with −87dBm sensitivity","authors":"Jonathan K. Brown, D. Wentzloff","doi":"10.1109/RFIC.2011.5940630","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940630","url":null,"abstract":"A 0.13µm CMOS clock-harvesting receiver is presented which extracts a 21Hz clock embedded within the GSM standard for the wake-up of a wireless sensor network. In active mode, the receiver achieves −87dBm sensitivity with 57µs of jitter at the output while consuming 126µW. The receiver is optimized for heavy duty-cycling with a sleep-mode power consumption of only 81pW.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123390596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Millimeter-wave modeling of isolated MOS substrate network through gate-bulk measurements 通过栅极体测量的隔离MOS衬底网络的毫米波建模
Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940662
B. Dormieu, C. Charbuillet, F. Danneville, N. Kauffmann, P. Scheer
This paper presents a novel methodology for the extraction of the substrate network components in n-MOS isolated devices, based on original “Gate-Bulk” structures. Since the main model acceptance criteria is here the frequency dependency, a large part is devoted to accurately model distributed effects in the p-well and the deep n-well layers up to 80 GHz. The main structures are completed with intermediate structures which give a better understanding of the substrate distribution effects.
本文提出了一种基于原始“栅极体”结构提取n-MOS隔离器件中衬底网络元件的新方法。由于这里的主要模型接受标准是频率依赖性,因此很大一部分用于精确地模拟p-井和深n-井层中高达80 GHz的分布效应。主结构由中间结构组成,可以更好地理解衬底分布效应。
{"title":"Millimeter-wave modeling of isolated MOS substrate network through gate-bulk measurements","authors":"B. Dormieu, C. Charbuillet, F. Danneville, N. Kauffmann, P. Scheer","doi":"10.1109/RFIC.2011.5940662","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940662","url":null,"abstract":"This paper presents a novel methodology for the extraction of the substrate network components in n-MOS isolated devices, based on original “Gate-Bulk” structures. Since the main model acceptance criteria is here the frequency dependency, a large part is devoted to accurately model distributed effects in the p-well and the deep n-well layers up to 80 GHz. The main structures are completed with intermediate structures which give a better understanding of the substrate distribution effects.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127687857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 25MHz–6.44GHz LC-VCO using a 5-port inductor for multi-band frequency generation 25MHz-6.44GHz LC-VCO,采用5端口电感,用于多频段频率产生
Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940681
W. Deng, K. Okada, A. Matsuzawa
This paper proposes a wide tuning range VCO for multi-band frequency generation. The wide band oscillator consists of a dual-mode LC-VCO using a 5-port inductor, and a divider chain. The proposed 5-port inductor provides two different inductances, which could support two resonances in a compact chip area. Thus, for LC-VCO, two operation modes are obtained to increase the tuning range. The experimental results achieve 25MHz-to-6.44GHz of continuous tuning range with a FoMT of −209 dBc/Hz.
提出了一种用于多频段频率产生的宽调谐范围压控振荡器。宽带振荡器由使用5端口电感器的双模LC-VCO和分频链组成。所提出的5端口电感提供两种不同的电感,这可以支持两个共振在一个紧凑的芯片区域。因此,对于LC-VCO,获得了两种工作模式,以增加调谐范围。实验结果实现了25mhz ~ 6.44 ghz的连续调谐范围,fmt为−209 dBc/Hz。
{"title":"A 25MHz–6.44GHz LC-VCO using a 5-port inductor for multi-band frequency generation","authors":"W. Deng, K. Okada, A. Matsuzawa","doi":"10.1109/RFIC.2011.5940681","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940681","url":null,"abstract":"This paper proposes a wide tuning range VCO for multi-band frequency generation. The wide band oscillator consists of a dual-mode LC-VCO using a 5-port inductor, and a divider chain. The proposed 5-port inductor provides two different inductances, which could support two resonances in a compact chip area. Thus, for LC-VCO, two operation modes are obtained to increase the tuning range. The experimental results achieve 25MHz-to-6.44GHz of continuous tuning range with a FoMT of −209 dBc/Hz.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127891807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A 90GHz pulsed-transmitter with near-field/far-field energy cancellation using a dual-loop antenna 90GHz脉冲发射机,近场/远场能量抵消,采用双环天线
Pub Date : 2011-06-05 DOI: 10.1109/RFIC.2011.5940672
A. Arbabian, Shinwon Kang, Steven Callender, B. Afshar, Jun-Chau Chien, A. Niknejad
A reflective, dual-loop, switching antenna utilizing near-field/far-field energy cancellation is integrated in a 90 GHz pulsed transmitter (TX). The TX features high ON/OFF ratio, good antenna efficiency and PRF up to 3.45GHz. It achieves TX power of 10dBm with 18dB of power tuning. The pulse width is tunable between 46ps to 310ps and initial bistatic measurements distinguish 4 reflectors across a 6cm region signifying progress towards the development of a diagnostic medical imager in silicon.
利用近场/远场能量抵消的反射、双环、开关天线集成在90 GHz脉冲发射机(TX)中。TX具有高开/关比,良好的天线效率,PRF高达3.45GHz。它实现了10dBm的TX功率和18dB的功率调谐。脉冲宽度在46ps到310ps之间可调,最初的双基地测量在6厘米的区域内区分了4个反射器,这标志着硅诊断医学成像仪的发展取得了进展。
{"title":"A 90GHz pulsed-transmitter with near-field/far-field energy cancellation using a dual-loop antenna","authors":"A. Arbabian, Shinwon Kang, Steven Callender, B. Afshar, Jun-Chau Chien, A. Niknejad","doi":"10.1109/RFIC.2011.5940672","DOIUrl":"https://doi.org/10.1109/RFIC.2011.5940672","url":null,"abstract":"A reflective, dual-loop, switching antenna utilizing near-field/far-field energy cancellation is integrated in a 90 GHz pulsed transmitter (TX). The TX features high ON/OFF ratio, good antenna efficiency and PRF up to 3.45GHz. It achieves TX power of 10dBm with 18dB of power tuning. The pulse width is tunable between 46ps to 310ps and initial bistatic measurements distinguish 4 reflectors across a 6cm region signifying progress towards the development of a diagnostic medical imager in silicon.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126543980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
期刊
2011 IEEE Radio Frequency Integrated Circuits Symposium
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