Pub Date : 2012-12-01DOI: 10.1109/IEDM.2012.6479041
A. Matsuzawa
This paper reviews and discusses the recent progress of analog and RF circuits design and the future devices interaction, focusing on the millimeter wave RF circuits and ADCs. With the scaling of CMOS technology, fT and fmax are increased. Using an advanced CMOS process and techniques such as the negative capacitance, the gain flattening, the accurate impedance matching using transmission lines, and the injection locking, a 60 GHz CMOS transceiver is realized. It attains 16 Gbps data transmission with the 16 QAM method. A dynamic comparator using a dynamic pre-amplifier with capacitive digital offset voltage compensation realizes a small mismatch voltage, low noise, low power, and low voltage operation without any static current. Flash ADCs and SAR ADCs using dynamic comparators have progressed. The interpolation method can ease the gain requirement for OpAmp in pipelined ADCs. The interconnection structure should be considered to realize low loss transmission lines and high density and large capacitance ratio MOM capacitors.
{"title":"Analog and RF circuits design and future devices interaction","authors":"A. Matsuzawa","doi":"10.1109/IEDM.2012.6479041","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479041","url":null,"abstract":"This paper reviews and discusses the recent progress of analog and RF circuits design and the future devices interaction, focusing on the millimeter wave RF circuits and ADCs. With the scaling of CMOS technology, fT and fmax are increased. Using an advanced CMOS process and techniques such as the negative capacitance, the gain flattening, the accurate impedance matching using transmission lines, and the injection locking, a 60 GHz CMOS transceiver is realized. It attains 16 Gbps data transmission with the 16 QAM method. A dynamic comparator using a dynamic pre-amplifier with capacitive digital offset voltage compensation realizes a small mismatch voltage, low noise, low power, and low voltage operation without any static current. Flash ADCs and SAR ADCs using dynamic comparators have progressed. The interpolation method can ease the gain requirement for OpAmp in pipelined ADCs. The interconnection structure should be considered to realize low loss transmission lines and high density and large capacitance ratio MOM capacitors.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"49 1","pages":"14.3.1-14.3.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90761779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/IEDM.2012.6478989
H. Toshiyoshi, T. Konishi, K. Machida, K. Masu
We have developed a multi-physics simulation platform for microelectromechanical systems (MEMS) on a spice-based circuit simulator (LTspice) and by interpreting the analytical models for electromechanical components such as electrostatic parallel-plate actuator, viscoelastic spring, and mechanical anchor by using behavioral current/voltage sources. The Kernel solver for the mechanical equation of motion (EOM) has been programmed by simply using the integral function of the LTspice mathematic library. Simulation capability has been extended to and tested against the electrostatic digital torsion mirror device integrated with CMOS level shifter circuit.
{"title":"A multi-physics simulation technique for integrated MEMS","authors":"H. Toshiyoshi, T. Konishi, K. Machida, K. Masu","doi":"10.1109/IEDM.2012.6478989","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6478989","url":null,"abstract":"We have developed a multi-physics simulation platform for microelectromechanical systems (MEMS) on a spice-based circuit simulator (LTspice) and by interpreting the analytical models for electromechanical components such as electrostatic parallel-plate actuator, viscoelastic spring, and mechanical anchor by using behavioral current/voltage sources. The Kernel solver for the mechanical equation of motion (EOM) has been programmed by simply using the integral function of the LTspice mathematic library. Simulation capability has been extended to and tested against the electrostatic digital torsion mirror device integrated with CMOS level shifter circuit.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"10 1","pages":"6.3.1-6.3.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90975157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/IEDM.2012.6479130
J. G. Alzate, P. Amiri, P. Upadhyaya, S. Cherepov, Jian Zhu, Mark Lewis, Richard Dorrance, J. Katine, Jürgen Langer, Kosmas Galatsis, D. Markovic, Ilya Krivorotov, Kang L. Wang
We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ~10x reduction in switching energies (compared to STT) with leakage currents <; 105 A/cm2. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.
{"title":"Voltage-induced switching of nanoscale magnetic tunnel junctions","authors":"J. G. Alzate, P. Amiri, P. Upadhyaya, S. Cherepov, Jian Zhu, Mark Lewis, Richard Dorrance, J. Katine, Jürgen Langer, Kosmas Galatsis, D. Markovic, Ilya Krivorotov, Kang L. Wang","doi":"10.1109/IEDM.2012.6479130","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479130","url":null,"abstract":"We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ~10x reduction in switching energies (compared to STT) with leakage currents <; 105 A/cm2. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"133 1","pages":"29.5.1-29.5.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76743201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
On-chip optics in image sensors has played an important role for image sensor pixel shrinkage and image sensor progression on the whole. There are three key functions; light collecting, color filtering and new specific functions, all of which are reviewed with their future trends. For light collecting technologies, 1.12 um pixel FSI (front side illumination) with noble lightpipe, which is suitable for large chief ray angle lenses, is explained.
{"title":"Evolution of optical structure in image sensors","authors":"Nobukazu Teranishi, Hisashi Watanabe, Takehiko Ueda, Naohisa Sengoku","doi":"10.1109/IEDM.2012.6479092","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479092","url":null,"abstract":"On-chip optics in image sensors has played an important role for image sensor pixel shrinkage and image sensor progression on the whole. There are three key functions; light collecting, color filtering and new specific functions, all of which are reviewed with their future trends. For light collecting technologies, 1.12 um pixel FSI (front side illumination) with noble lightpipe, which is suitable for large chief ray angle lenses, is explained.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"22 1 1","pages":"24.1.1-24.1.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78480263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/IEDM.2012.6479161
T. Nogami, C. Penny, A. Madan, C. Parks, J. Li, P. Flaitz, A. Uedono, S. Chiang, M. He, A. Simon, T. Bolom, T. Ryan, F. Ito, C. Christiansen, L. Tai, C. Hu, H. Kim, X. Zhang, K. Tanwar, S. Choi, F. Baumann, R. Davis, J. Kelly, R. Murphy, S. Molis, J. Rowland, P. Dehaven, D. Canaperi, T. Spooner, D. Edelstein
Cu(Mn) alloy seed BEOL studies revealed fundamental insights into Mn segregation and EM enhancement. We found a metallic-state Mn-rich Cu layer under the MnOx layer at the Cu/SiCNH cap interface, and correlated this metallic layer with additional EM enhancement. A carbonyl-based CVD-Co liner film consumed Mn, reducing its segregation and EM benefit, suggesting O-free Co liner films are strategic for Cu-alloy seed extendibility.
{"title":"Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals","authors":"T. Nogami, C. Penny, A. Madan, C. Parks, J. Li, P. Flaitz, A. Uedono, S. Chiang, M. He, A. Simon, T. Bolom, T. Ryan, F. Ito, C. Christiansen, L. Tai, C. Hu, H. Kim, X. Zhang, K. Tanwar, S. Choi, F. Baumann, R. Davis, J. Kelly, R. Murphy, S. Molis, J. Rowland, P. Dehaven, D. Canaperi, T. Spooner, D. Edelstein","doi":"10.1109/IEDM.2012.6479161","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479161","url":null,"abstract":"Cu(Mn) alloy seed BEOL studies revealed fundamental insights into Mn segregation and EM enhancement. We found a metallic-state Mn-rich Cu layer under the MnOx layer at the Cu/SiCNH cap interface, and correlated this metallic layer with additional EM enhancement. A carbonyl-based CVD-Co liner film consumed Mn, reducing its segregation and EM benefit, suggesting O-free Co liner films are strategic for Cu-alloy seed extendibility.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"46 1","pages":"33.7.1-33.7.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74675082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/IEDM.2012.6478990
N. Xu, N. Damrongplasit, H. Takeuchi, R. Stephenson, N. Cody, A. Yiptong, X. Huang, M. Hytha, R. Mears, T. Liu
A detailed simulation and experimental study of MOSFET mobility enhancement and electrostatic integrity improvement achieved by the insertion of oxygen layers within the Si channel region is presented. The applicability of this technology to thin-body MOSFET structures is discussed. Projections indicate that it will be more effective than strain for boosting performance at the 14 nm node.
{"title":"MOSFET performance and scalability enhancement by insertion of oxygen layers","authors":"N. Xu, N. Damrongplasit, H. Takeuchi, R. Stephenson, N. Cody, A. Yiptong, X. Huang, M. Hytha, R. Mears, T. Liu","doi":"10.1109/IEDM.2012.6478990","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6478990","url":null,"abstract":"A detailed simulation and experimental study of MOSFET mobility enhancement and electrostatic integrity improvement achieved by the insertion of oxygen layers within the Si channel region is presented. The applicability of this technology to thin-body MOSFET structures is discussed. Projections indicate that it will be more effective than strain for boosting performance at the 14 nm node.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"1 1","pages":"6.4.1-6.4.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73239715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/IEDM.2012.6478978
Yunfei Gao, Y. Kubo, Chia-Ching Lin, Zhihong Chen, J. Appenzeller
For the first time, a spin relaxation length (λS) of ~5μm is measured in graphene at room temperature - a critical accomplishment considering the recent interest in spin based devices for low power applications. The key to this demonstration lies in the use of few layer graphene. In fact, optimum performance is demonstrated here for ~7-layer graphene. Moreover, a 4x increase of λS is observed at 77K.
{"title":"Optimized spin relaxation length in few layer graphene at room temperature","authors":"Yunfei Gao, Y. Kubo, Chia-Ching Lin, Zhihong Chen, J. Appenzeller","doi":"10.1109/IEDM.2012.6478978","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6478978","url":null,"abstract":"For the first time, a spin relaxation length (λS) of ~5μm is measured in graphene at room temperature - a critical accomplishment considering the recent interest in spin based devices for low power applications. The key to this demonstration lies in the use of few layer graphene. In fact, optimum performance is demonstrated here for ~7-layer graphene. Moreover, a 4x increase of λS is observed at 77K.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"18 1","pages":"4.4.1-4.4.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73702430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/IEDM.2012.6479141
H. Cheng, J. Y. Wu, R. Cheek, S. Raoux, M. BrightSky, D. Garbin, S. Kim, T. Hsu, Y. Zhu, E. Lai, E. Joseph, A. Schrott, S. Lai, A. Ray, H. Lung, C. Lam
Phase change memory (PCRAM) is an ideal embedded memory due to its simple BEOL process and low voltage operation. Industrial and automotive applications of PCRAM, however, have not been realized because of poor high temperature properties of the conventional Ge2Sb2Te5 phase-change material [1-3]. We have previously reported a special GexSbyTez material along the Ge and Sb2Te3 tie line that showed superior high temperature performance. In this work we have further enhanced our previous “golden” material by incorporating nitrogen and engineering the Ge/N concentration. In order to rapidly explore a range of new materials a fast method to test retention behavior by laser melt-quenching is adopted which yields retention data on blanket films consistent with device results. A new material with special Ge/N concentration with excellent high temperature retention is discovered. The new material demonstrated nearly 100% yield in a 256 Mb test chip after 160 °C, 84 hrs baking, with projected 10-year retention at 120 °C. (> 9,000 years at 85 °C.).
{"title":"A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTe z phase change material","authors":"H. Cheng, J. Y. Wu, R. Cheek, S. Raoux, M. BrightSky, D. Garbin, S. Kim, T. Hsu, Y. Zhu, E. Lai, E. Joseph, A. Schrott, S. Lai, A. Ray, H. Lung, C. Lam","doi":"10.1109/IEDM.2012.6479141","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479141","url":null,"abstract":"Phase change memory (PCRAM) is an ideal embedded memory due to its simple BEOL process and low voltage operation. Industrial and automotive applications of PCRAM, however, have not been realized because of poor high temperature properties of the conventional Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase-change material [1-3]. We have previously reported a special Ge<sub>x</sub>Sb<sub>y</sub>Te<sub>z</sub> material along the Ge and Sb<sub>2</sub>Te<sub>3</sub> tie line that showed superior high temperature performance. In this work we have further enhanced our previous “golden” material by incorporating nitrogen and engineering the Ge/N concentration. In order to rapidly explore a range of new materials a fast method to test retention behavior by laser melt-quenching is adopted which yields retention data on blanket films consistent with device results. A new material with special Ge/N concentration with excellent high temperature retention is discovered. The new material demonstrated nearly 100% yield in a 256 Mb test chip after 160 °C, 84 hrs baking, with projected 10-year retention at 120 °C. (> 9,000 years at 85 °C.).","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"22 1","pages":"31.1.1-31.1.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82154720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/IEDM.2012.6478981
D. Shahrjerdi, S. Bedell, A. Khakifirooz, K. Fogel, P. Lauro, K. Cheng, J. Ott, M. Gaynes, D. Sadana
We present, for the first time, mechanically-flexible advanced-node CMOS circuits, including SRAM and ring oscillators, with gate lengths <;30 nm and contacted gate pitch of 100 nm. Our novel layer transfer technique called “controlled spalling” is employed as an incredibly simple, low-cost, and manufacturable approach to separate the finished CMOS circuits from the host silicon substrate. The overall performance of the flexible devices and circuits are carefully examined, demonstrating functional SRAM cells down to VDD=0.6V and ring oscillators with record stage delay of ~16ps, the best reported to date for a flexible circuit.
{"title":"Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology","authors":"D. Shahrjerdi, S. Bedell, A. Khakifirooz, K. Fogel, P. Lauro, K. Cheng, J. Ott, M. Gaynes, D. Sadana","doi":"10.1109/IEDM.2012.6478981","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6478981","url":null,"abstract":"We present, for the first time, mechanically-flexible advanced-node CMOS circuits, including SRAM and ring oscillators, with gate lengths <;30 nm and contacted gate pitch of 100 nm. Our novel layer transfer technique called “controlled spalling” is employed as an incredibly simple, low-cost, and manufacturable approach to separate the finished CMOS circuits from the host silicon substrate. The overall performance of the flexible devices and circuits are carefully examined, demonstrating functional SRAM cells down to VDD=0.6V and ring oscillators with record stage delay of ~16ps, the best reported to date for a flexible circuit.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"17 1","pages":"5.1.1-5.1.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85121565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/IEDM.2012.6479059
G. Fiori, G. Iannaccone
In this work, we investigate through atomistic simulations the possible improvements achievable by using bilayer graphene as FET channel material for radio frequency applications, and the related challenges. Bilayer graphene shows better performance as compared to monolayer graphene in terms of larger output resistance, which in turns is beneficial both for the low frequency voltage gain, and the maximum gain frequency.
{"title":"Insights on radio frequency bilayer graphene FETs","authors":"G. Fiori, G. Iannaccone","doi":"10.1109/IEDM.2012.6479059","DOIUrl":"https://doi.org/10.1109/IEDM.2012.6479059","url":null,"abstract":"In this work, we investigate through atomistic simulations the possible improvements achievable by using bilayer graphene as FET channel material for radio frequency applications, and the related challenges. Bilayer graphene shows better performance as compared to monolayer graphene in terms of larger output resistance, which in turns is beneficial both for the low frequency voltage gain, and the maximum gain frequency.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"8 1","pages":"17.3.1-17.3.4"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85262233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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