Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381035
Yen-Hsun Su, W. Lai, L. Teoh, H. Hong, M. Hon
Gold nanoparticles (Au NPs) have been attracting more attention because they have many color varieties in the visible region based on plasmon resonance, which is due to the collective oscillation of the electrons at the surface of the nanoparticles. We prepared 6 nm Au NPs to modify the surface of the glass substrate. Surface plasmons resonance of Au NPs in toluene is between 500 nm and 600 nm. When Au NPs are modified on the glass substrate, the peak of surface plasmons resonance of Au NPs is shifted. We employed spectral ellipsometry to detect optical properties. Then the characteristics of surface plasmons resonance of Au NPs is determined by reflective index. The performance of surface plasmons resonance of Au NPs on the glass substrate is simulated and shown.
{"title":"How the Optical Properties of Au Nanoparticles are Affected by Surface Plasmon Resonance","authors":"Yen-Hsun Su, W. Lai, L. Teoh, H. Hong, M. Hon","doi":"10.1109/SMELEC.2006.381035","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381035","url":null,"abstract":"Gold nanoparticles (Au NPs) have been attracting more attention because they have many color varieties in the visible region based on plasmon resonance, which is due to the collective oscillation of the electrons at the surface of the nanoparticles. We prepared 6 nm Au NPs to modify the surface of the glass substrate. Surface plasmons resonance of Au NPs in toluene is between 500 nm and 600 nm. When Au NPs are modified on the glass substrate, the peak of surface plasmons resonance of Au NPs is shifted. We employed spectral ellipsometry to detect optical properties. Then the characteristics of surface plasmons resonance of Au NPs is determined by reflective index. The performance of surface plasmons resonance of Au NPs on the glass substrate is simulated and shown.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129865798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381050
S. Elfaki, A. Kareem, A. Mohammed, S. Shaari
In this paper we describe the performance of the Multiplexer/Demultiplexer (MUX/DEMUX) in the Dense Wavelength Division Multiplexer (DWDM) technology based on arrayed waveguide grating (AWG). The accumulated crosstalk in large-scale AWG solved by the cascade-connection of small AWGs. We propose two branches of 64 channels each have two stages of AWG cascaded as second and third stages. We introduce an interleaver filter based on AWG to produce odd and even optical channels (64) as an input to each branch, which relax the system by doubling the space between channels.
{"title":"Crosstalk Enhancement in Multiplexer/Demultiplexer Based Arrayed Wavelength Grating in Dense Wavelength Division Multiplexing","authors":"S. Elfaki, A. Kareem, A. Mohammed, S. Shaari","doi":"10.1109/SMELEC.2006.381050","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381050","url":null,"abstract":"In this paper we describe the performance of the Multiplexer/Demultiplexer (MUX/DEMUX) in the Dense Wavelength Division Multiplexer (DWDM) technology based on arrayed waveguide grating (AWG). The accumulated crosstalk in large-scale AWG solved by the cascade-connection of small AWGs. We propose two branches of 64 channels each have two stages of AWG cascaded as second and third stages. We introduce an interleaver filter based on AWG to produce odd and even optical channels (64) as an input to each branch, which relax the system by doubling the space between channels.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128358309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380684
H. Gharaee, E. Tathesari
High speed electronic systems demand frequency synthesizer of high resolution, wide bandwidth and fast switching speed. The "Flying-Adder" architecture is a frequency and phase synthesis technique that is based on a VCO of multiple delay stages. This Flying-Adder is implemented in Quartus software which its result shows that the highest frequency is about 83 MHz, when VCO oscillates at 5.2 MHz. In some cases, this architecture has a barrier of inherent jitter on the output frequency. In this brief, a new method is proposed for eliminating such jitter problem. This method is caused to achieve exact phase and frequency. This design is implemented in Quartus software with EP1K30QC208-1 device from ACEX IK series. When VCO is running at 0.651-10 MHz high resolution output frequency is achieved.
{"title":"A New High Resolution Frequency and Phase Synthesis Method based on `Flying-Adder' Architecture","authors":"H. Gharaee, E. Tathesari","doi":"10.1109/SMELEC.2006.380684","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380684","url":null,"abstract":"High speed electronic systems demand frequency synthesizer of high resolution, wide bandwidth and fast switching speed. The \"Flying-Adder\" architecture is a frequency and phase synthesis technique that is based on a VCO of multiple delay stages. This Flying-Adder is implemented in Quartus software which its result shows that the highest frequency is about 83 MHz, when VCO oscillates at 5.2 MHz. In some cases, this architecture has a barrier of inherent jitter on the output frequency. In this brief, a new method is proposed for eliminating such jitter problem. This method is caused to achieve exact phase and frequency. This design is implemented in Quartus software with EP1K30QC208-1 device from ACEX IK series. When VCO is running at 0.651-10 MHz high resolution output frequency is achieved.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128629338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380739
Lee Yuan Ping, R. R. Nistala, H. Younan, M. Bhat
In this paper, the dependence of crystallographic orientation in Aluminum thin films grown on different barrier-metal substrate schemes (Ta or Ta/TaN) will be presented. The orientation of Al grains will be shown to have a bearing on the material characteristics, which are important in IC fabrication from the perspective of both the device functionality and reliability. X-ray powder diffraction studies indicate that the films deposited on a single Ta layer are randomly oriented. On the other hand, a Ta/TaN bilayer substrate scheme results in preferred orientation along Al(111). A correlation will be established between the grain orientation and optical reflectivity properties of Al films. Moreover, the optical appearance of bondpads and their bondability are also influenced by the orientation of Al grains.
{"title":"Dependence of Texture in Al Bondpads on Ta/TaN Bilayer Barrier and its Correlation to Optical Reflectivity in 0.13μm IC Technology","authors":"Lee Yuan Ping, R. R. Nistala, H. Younan, M. Bhat","doi":"10.1109/SMELEC.2006.380739","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380739","url":null,"abstract":"In this paper, the dependence of crystallographic orientation in Aluminum thin films grown on different barrier-metal substrate schemes (Ta or Ta/TaN) will be presented. The orientation of Al grains will be shown to have a bearing on the material characteristics, which are important in IC fabrication from the perspective of both the device functionality and reliability. X-ray powder diffraction studies indicate that the films deposited on a single Ta layer are randomly oriented. On the other hand, a Ta/TaN bilayer substrate scheme results in preferred orientation along Al(111). A correlation will be established between the grain orientation and optical reflectivity properties of Al films. Moreover, the optical appearance of bondpads and their bondability are also influenced by the orientation of Al grains.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127033467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381070
M.Y. Hamid, U. Thangamani, P. Vaya
Piezo-resistive metal gauge on rectangular membrane design and its simulation for low pressure application is presented in this paper. Small deflection analytical equations are derived for both simply supported and clamped edge boundary conditions. The design and orientation of grid pattern on rectangular membrane is based on ANSYS simulation results. It is used to find out maximum strain locations to achieve high sensitivity. Maximum of 0.3509 micro strain and maximum resistance change in grid = 90.6271 micro-ohm are achieved for an applied load of ImPa. The sensitivity of the gauge is 0.35 muepsiv/mPa.
{"title":"Simulation of Piezo-Resistive Metal Gauge on Rectangular Membrane for Low Pressure Application","authors":"M.Y. Hamid, U. Thangamani, P. Vaya","doi":"10.1109/SMELEC.2006.381070","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381070","url":null,"abstract":"Piezo-resistive metal gauge on rectangular membrane design and its simulation for low pressure application is presented in this paper. Small deflection analytical equations are derived for both simply supported and clamped edge boundary conditions. The design and orientation of grid pattern on rectangular membrane is based on ANSYS simulation results. It is used to find out maximum strain locations to achieve high sensitivity. Maximum of 0.3509 micro strain and maximum resistance change in grid = 90.6271 micro-ohm are achieved for an applied load of ImPa. The sensitivity of the gauge is 0.35 muepsiv/mPa.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130619617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380762
S. Yaakob, M. Ismail, R. Mohamad, M. Yahya, A. Mat, M. Mokhtar, H. Rashid
This paper presents the evaluation of radio over fibre (ROF) capability with electroabsorption modulator (EAM) as a downlink photodetector (PD) and uplink radio frequency (RF) modulator. The results show that the EAM device has potential to be adopted as the transceiver at the remote antenna unit (RAU) for the system. The 130 m ROF system with biased EAM is capable to obtain a symmetrical WLAN 802.11a data rate of 18 Mbps with laser diode output power of 8.7 dBm.
本文介绍了用电吸收调制器(EAM)作为下行光电探测器(PD)和上行射频调制器对光纤无线电(ROF)性能的评价。结果表明，EAM器件具有作为系统远端天线单元(RAU)收发机的潜力。带有偏置EAM的130 m ROF系统能够在激光二极管输出功率为8.7 dBm的情况下获得18 Mbps的对称WLAN 802.11a数据速率。
{"title":"Adopting Electroabsorption Modulator for the WLAN 802.11a Radio over Fibre System","authors":"S. Yaakob, M. Ismail, R. Mohamad, M. Yahya, A. Mat, M. Mokhtar, H. Rashid","doi":"10.1109/SMELEC.2006.380762","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380762","url":null,"abstract":"This paper presents the evaluation of radio over fibre (ROF) capability with electroabsorption modulator (EAM) as a downlink photodetector (PD) and uplink radio frequency (RF) modulator. The results show that the EAM device has potential to be adopted as the transceiver at the remote antenna unit (RAU) for the system. The 130 m ROF system with biased EAM is capable to obtain a symmetrical WLAN 802.11a data rate of 18 Mbps with laser diode output power of 8.7 dBm.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123510842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381098
Cheong Yew Shun, Ko Bong Sang, M.J. Bin Manaf, K. Ibrahim, Zahid Jamal
The shrinking of contact opening is inevitable, as the technology progresses. The most obvious shrink strategies, wavelength reduction and phase-shifting masks (PSM) offer the most significant improvements to meet these demands, but at a hefty price. By using focus latitude exposure technique (FLEX) it is possible to print down contact hole with reasonable processing latitude using 248 nm wavelength lithography and binary mask. A few parameters were varied to obtain suitable condition. Several feature sizes were printed and measured to get the proper combination of the print bias and focal distances with acceptable process margin. Verification on production wafer is needed for different pitch of feature sizes and fine-tuning on the focal distance for optimum results.
{"title":"Contact Hole Printing in Binary Mask by FLEX Technique","authors":"Cheong Yew Shun, Ko Bong Sang, M.J. Bin Manaf, K. Ibrahim, Zahid Jamal","doi":"10.1109/SMELEC.2006.381098","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381098","url":null,"abstract":"The shrinking of contact opening is inevitable, as the technology progresses. The most obvious shrink strategies, wavelength reduction and phase-shifting masks (PSM) offer the most significant improvements to meet these demands, but at a hefty price. By using focus latitude exposure technique (FLEX) it is possible to print down contact hole with reasonable processing latitude using 248 nm wavelength lithography and binary mask. A few parameters were varied to obtain suitable condition. Several feature sizes were printed and measured to get the proper combination of the print bias and focal distances with acceptable process margin. Verification on production wafer is needed for different pitch of feature sizes and fine-tuning on the focal distance for optimum results.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114218759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381112
H. A. Hamid, M. Abdullah, A. Aziz, N. Al-Hardan, S. A. Rosli
P - type conduction in ZnO thin films was realized by codoping method. ZnO thin films were prepared on silicon (111) substrates by DC magnetron sputtering using pure zinc disk as target and underwent heat treatment at 300degC for 1 hr. Results indicated that the co doped p - type ZnO had the lowest resistivity of 3.412 times 10-3 Omega.cm with a carrier concentration of 1.54 times 1022 cm-3.
用共掺杂的方法实现了ZnO薄膜的P型导电。以纯锌片为靶材，采用直流磁控溅射法在硅(111)衬底上制备ZnO薄膜，并在300℃下热处理1小时。结果表明，共掺杂p型ZnO的电阻率最低，为3.412倍10-3 ω。载流子浓度为1.54 × 1022 Cm -3。
{"title":"Effect of N2 and O2 Anneal Gas Ratio For Low Resistance p - Type ZnO Formation","authors":"H. A. Hamid, M. Abdullah, A. Aziz, N. Al-Hardan, S. A. Rosli","doi":"10.1109/SMELEC.2006.381112","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381112","url":null,"abstract":"P - type conduction in ZnO thin films was realized by codoping method. ZnO thin films were prepared on silicon (111) substrates by DC magnetron sputtering using pure zinc disk as target and underwent heat treatment at 300degC for 1 hr. Results indicated that the co doped p - type ZnO had the lowest resistivity of 3.412 times 10-3 Omega.cm with a carrier concentration of 1.54 times 1022 cm-3.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"27 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132410520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.381065
S. Arshad, M. Salleh, M. Yahaya
A single-layer and multi-layer titanium dioxide (TiO2) coated with dye porphyrin thin films were prepared on Quartz Crystal Microbalance (QCM) using sol-gel dip coating method and were tested for sensing of volatile organic compounds (VOCs). The porphyrin was 2,3,7,8,12,13,17,18-octaethyl- 21H,23H-porphine cobalt (II). The sensing sensitivity was based on the change in the fundamental frequency of the QCM upon exposure towards three vapor samples, namely ethanol, acetone and 2-propanol. It was found that the thin films were sensitive towards all vapors and the sensing sensitivity was affected by the number of film layers. Although the three-layer film exhibited higher frequency response compared with the other films that have small number of layers, the sensing properties of this film are not repeatable and less selective. The performance of the QCM sensor was depended on microstructure of the thin film which was varied through the number layers.
{"title":"The Effect of Surface Microstructure on The Response of Titanium Dioxide Coated with Cobalt-Porphyrin Thin Films Towards Gases in Quartz Crystal Microbalance Sensor","authors":"S. Arshad, M. Salleh, M. Yahaya","doi":"10.1109/SMELEC.2006.381065","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.381065","url":null,"abstract":"A single-layer and multi-layer titanium dioxide (TiO2) coated with dye porphyrin thin films were prepared on Quartz Crystal Microbalance (QCM) using sol-gel dip coating method and were tested for sensing of volatile organic compounds (VOCs). The porphyrin was 2,3,7,8,12,13,17,18-octaethyl- 21H,23H-porphine cobalt (II). The sensing sensitivity was based on the change in the fundamental frequency of the QCM upon exposure towards three vapor samples, namely ethanol, acetone and 2-propanol. It was found that the thin films were sensitive towards all vapors and the sensing sensitivity was affected by the number of film layers. Although the three-layer film exhibited higher frequency response compared with the other films that have small number of layers, the sensing properties of this film are not repeatable and less selective. The performance of the QCM sensor was depended on microstructure of the thin film which was varied through the number layers.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130246965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-11-01DOI: 10.1109/SMELEC.2006.380760
S. I. Yet, E.C. Goh, F. Lim, A. E. Ling, B.C. Lee, Y.K. Ng, W. Sheu
Conventional I-line lithography process utilizes single post-apply bake temperature to unify and simplify the process. As design rule shrinks and mask field size increases, tighter specification is applied on non-critical implant layers, including thick implant resist with thickness typically 4.0 mum and above. Poor uniformity for CD & overlay was observed for thick implant resist layer. Systematic uncorrectable overlay residue was observed from the overlay map. Cross-section analysis shows asymmetric resist profile existed, causing inaccurate signal reading during measurement. Besides, huge amount of resist out-gassing found contaminate the CD-SEM gun tip and causing problem during implant process. In this paper, the problems of thick implant resist layer is analyzed and the process improvement on thick implant resist layer by using higher post-apply bake temperature is introduced. The resist profile changed was checked in detail and the resist removal after implant was verified. As a result, both CD & overlay uniformity was greatly improved. New process with higher post-apply bake condition was fully qualified with comparable wafer yield.
{"title":"Photolithography Process Improvement for Thick Implant Resist Using 120°C Post-Apply Bake","authors":"S. I. Yet, E.C. Goh, F. Lim, A. E. Ling, B.C. Lee, Y.K. Ng, W. Sheu","doi":"10.1109/SMELEC.2006.380760","DOIUrl":"https://doi.org/10.1109/SMELEC.2006.380760","url":null,"abstract":"Conventional I-line lithography process utilizes single post-apply bake temperature to unify and simplify the process. As design rule shrinks and mask field size increases, tighter specification is applied on non-critical implant layers, including thick implant resist with thickness typically 4.0 mum and above. Poor uniformity for CD & overlay was observed for thick implant resist layer. Systematic uncorrectable overlay residue was observed from the overlay map. Cross-section analysis shows asymmetric resist profile existed, causing inaccurate signal reading during measurement. Besides, huge amount of resist out-gassing found contaminate the CD-SEM gun tip and causing problem during implant process. In this paper, the problems of thick implant resist layer is analyzed and the process improvement on thick implant resist layer by using higher post-apply bake temperature is introduced. The resist profile changed was checked in detail and the resist removal after implant was verified. As a result, both CD & overlay uniformity was greatly improved. New process with higher post-apply bake condition was fully qualified with comparable wafer yield.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130261818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：