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1989 Proceedings of the IEEE Custom Integrated Circuits Conference最新文献

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A no-trimming SLIC two-chip set with coin telephone signaling facilities 一种带有投币电话信号设施的无修边SLIC双芯片装置
Pub Date : 1989-05-15 DOI: 10.1109/CICC.1989.56771
M. Akata, Y. Nagataki, K. Koyabu, K. Mukai, S. Yoshida, I. Ueki
A subscriber line interface circuit (SLIC) two-chip set is presented. It eliminates off-chip function trimming and contains integrated coin telephone set facilities and BORSCHT functions. The set consists of: (a) the subscriber interface LSI, a 320-V dielectrically isolated bipolar LSI with on-chip thin-film resistors and double-layer metal; and (b) the subscriber processor LSI, a 1.6 μm CMOS LSI with oversampling A-D/D-A converters and a microprogrammable digital signal processor. The chip sizes are 5.5 mm×6.06 mm and 6.0 mm×5.7 mm, respectively. With the two-chip set, a SLIC for coin telephone set interface can be established without high-precision filter components or hybrid ICs with their function trimming
提出了一种用户线路接口电路(SLIC)双芯片组。它消除了片外功能修剪,并包含集成的投币电话机设施和BORSCHT功能。该装置包括:(a)用户接口LSI,采用片上薄膜电阻和双层金属的320v介电隔离双极LSI;(b)用户处理器LSI, 1.6 μm CMOS LSI,带过采样a - d /D-A转换器和微可编程数字信号处理器。芯片尺寸分别为5.5 mm×6.06 mm和6.0 mm×5.7 mm。采用双芯片组,无需高精度滤波元件或功能微调的混合集成电路,即可建立投币电话机接口的SLIC
{"title":"A no-trimming SLIC two-chip set with coin telephone signaling facilities","authors":"M. Akata, Y. Nagataki, K. Koyabu, K. Mukai, S. Yoshida, I. Ueki","doi":"10.1109/CICC.1989.56771","DOIUrl":"https://doi.org/10.1109/CICC.1989.56771","url":null,"abstract":"A subscriber line interface circuit (SLIC) two-chip set is presented. It eliminates off-chip function trimming and contains integrated coin telephone set facilities and BORSCHT functions. The set consists of: (a) the subscriber interface LSI, a 320-V dielectrically isolated bipolar LSI with on-chip thin-film resistors and double-layer metal; and (b) the subscriber processor LSI, a 1.6 μm CMOS LSI with oversampling A-D/D-A converters and a microprogrammable digital signal processor. The chip sizes are 5.5 mm×6.06 mm and 6.0 mm×5.7 mm, respectively. With the two-chip set, a SLIC for coin telephone set interface can be established without high-precision filter components or hybrid ICs with their function trimming","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"61 27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121457787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
CHARM: a synthesis tool for high-level chip-architecture planning CHARM:用于高级芯片架构规划的综合工具
Pub Date : 1989-05-15 DOI: 10.1109/CICC.1989.56684
Karl-Heinz Temme
A description is given of CHARM, a chip-architecture planning tool for digital VLSI. From a behavioral description on the algorithmic level, a structural strip-architecture plan is synthesized. It uses a knowledge-based approach that incorporates heuristics and experience from industrial designers into the system. This is done by modeling the various chip-architecture principles using generic objects called schemes, which are instantiated during the design process. Evaluation is done by heuristic quality functions to determine the best-suited architecture. A blackboard architecture is an adequate structure for the prototype expert system. The quality of this expert system heavily depends on the success of the knowledge acquisition from experienced VLSI designers. A simplified design example is given
介绍了数字VLSI芯片结构规划工具CHARM。从算法层面的行为描述出发,综合出了一个结构条形结构方案。它采用了一种基于知识的方法,将工业设计师的启发和经验融入到系统中。这是通过使用称为方案的通用对象对各种芯片架构原则进行建模来实现的,这些通用对象在设计过程中被实例化。评估由启发式质量函数完成,以确定最适合的体系结构。黑板结构是原型专家系统的合适结构。这个专家系统的质量很大程度上取决于从经验丰富的VLSI设计人员那里获得知识的成功。给出了一个简化的设计实例
{"title":"CHARM: a synthesis tool for high-level chip-architecture planning","authors":"Karl-Heinz Temme","doi":"10.1109/CICC.1989.56684","DOIUrl":"https://doi.org/10.1109/CICC.1989.56684","url":null,"abstract":"A description is given of CHARM, a chip-architecture planning tool for digital VLSI. From a behavioral description on the algorithmic level, a structural strip-architecture plan is synthesized. It uses a knowledge-based approach that incorporates heuristics and experience from industrial designers into the system. This is done by modeling the various chip-architecture principles using generic objects called schemes, which are instantiated during the design process. Evaluation is done by heuristic quality functions to determine the best-suited architecture. A blackboard architecture is an adequate structure for the prototype expert system. The quality of this expert system heavily depends on the success of the knowledge acquisition from experienced VLSI designers. A simplified design example is given","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116015939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Modular design of a high performance 32-bit microcontroller 模块化设计的高性能32位微控制器
Pub Date : 1989-05-15 DOI: 10.1109/CICC.1989.56821
Robert Skruhak, M. McDermott, C. Wiseman, M. Taborn, J. J. Vaglica, E. Carter
A 32-bit microcontroller the MC68332 has been fabricated using a macro-module design approach. This permitted early fabrication and evaluation of the modules as the designs were completed. Interface to the modules was achieved by a common bus interface, which was accessible externally for testing
采用宏模块设计方法制作了一个32位微控制器MC68332。这允许在设计完成后对模块进行早期制造和评估。通过公共总线接口实现与模块的接口,该接口可从外部访问以进行测试
{"title":"Modular design of a high performance 32-bit microcontroller","authors":"Robert Skruhak, M. McDermott, C. Wiseman, M. Taborn, J. J. Vaglica, E. Carter","doi":"10.1109/CICC.1989.56821","DOIUrl":"https://doi.org/10.1109/CICC.1989.56821","url":null,"abstract":"A 32-bit microcontroller the MC68332 has been fabricated using a macro-module design approach. This permitted early fabrication and evaluation of the modules as the designs were completed. Interface to the modules was achieved by a common bus interface, which was accessible externally for testing","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"277 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116225813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An approach to understanding evaluation of simulation results as an integrated task 将仿真结果评估理解为一项综合任务的方法
Pub Date : 1989-05-15 DOI: 10.1109/CICC.1989.56750
R. Buschke, K. Lagemann
The significance, requirements, and potential of an integrated tool for the evaluation of simulation results in VLSI design are discussed. Results and solutions developed for a simulation evaluation tool called SIMUEVA are stated and exemplified. Particular aspects considered are proper modeling of simulation result data, a UPN set calculator for extraction of goal-directed excerpts, validation by automatic comparison, inclusion of hardware structure descriptions into the evaluation process, examples of automatic fault location, and interaction of evaluation and other VLSI design tools are stated and exemplified
讨论了在VLSI设计中集成仿真结果评估工具的意义、要求和潜力。为模拟评估工具SIMUEVA开发的结果和解决方案进行了说明和举例说明。具体考虑的方面是仿真结果数据的适当建模,用于提取目标导向摘录的UPN集计算器,通过自动比较进行验证,在评估过程中包含硬件结构描述,自动故障定位示例,以及评估和其他VLSI设计工具的交互
{"title":"An approach to understanding evaluation of simulation results as an integrated task","authors":"R. Buschke, K. Lagemann","doi":"10.1109/CICC.1989.56750","DOIUrl":"https://doi.org/10.1109/CICC.1989.56750","url":null,"abstract":"The significance, requirements, and potential of an integrated tool for the evaluation of simulation results in VLSI design are discussed. Results and solutions developed for a simulation evaluation tool called SIMUEVA are stated and exemplified. Particular aspects considered are proper modeling of simulation result data, a UPN set calculator for extraction of goal-directed excerpts, validation by automatic comparison, inclusion of hardware structure descriptions into the evaluation process, examples of automatic fault location, and interaction of evaluation and other VLSI design tools are stated and exemplified","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"3 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116389710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Design and optimisation of CMOS wideband amplifiers CMOS宽带放大器的设计与优化
Pub Date : 1989-05-15 DOI: 10.1109/CICC.1989.56834
F. Op't Eynde, W. Sansen
Several CMOS amplifier types are compared and optimized for high-frequency applications. Scaling laws are derived for the power consumption as a function of the gain bandwidth, the load capacitance and the second pole. It is shown that minor modifications on existing circuits can save over a factor of two of power consumption. A 3-μm wideband amplifier is presented with 150-MHz gain-bandwidth and 60° phase margin and with 30 mW of power consumption for a load capacitance of 2 pF
几种CMOS放大器类型进行了比较和优化的高频应用。推导了功耗作为增益带宽、负载电容和第二极的函数的标度规律。结果表明,对现有电路进行微小的修改可以节省两倍以上的功耗。提出了一种3 μm宽带放大器,增益带宽为150 mhz,相位裕度为60°,负载电容为2 pF,功耗为30 mW
{"title":"Design and optimisation of CMOS wideband amplifiers","authors":"F. Op't Eynde, W. Sansen","doi":"10.1109/CICC.1989.56834","DOIUrl":"https://doi.org/10.1109/CICC.1989.56834","url":null,"abstract":"Several CMOS amplifier types are compared and optimized for high-frequency applications. Scaling laws are derived for the power consumption as a function of the gain bandwidth, the load capacitance and the second pole. It is shown that minor modifications on existing circuits can save over a factor of two of power consumption. A 3-μm wideband amplifier is presented with 150-MHz gain-bandwidth and 60° phase margin and with 30 mW of power consumption for a load capacitance of 2 pF","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116938708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
An approach to knowledge-based ASIC specification 一种基于知识的ASIC规范方法
Pub Date : 1989-05-15 DOI: 10.1109/CICC.1989.56788
K. Mueller-Glaser, J. Bortolazzi
An approach is described for knowledge-based acquisition and checking of system-specification data using frames and rules. Beside the functional description, electrical, timing, environmental, and test-oriented specification data is captured. The representation of a complete specification in a frame knowledge base provides support and control of essential design and verification steps
介绍了一种利用框架和规则对系统规格数据进行基于知识的获取和校验的方法。除了功能描述之外,还捕获了电气、定时、环境和面向测试的规范数据。在框架知识库中表示完整的规范提供了对基本设计和验证步骤的支持和控制
{"title":"An approach to knowledge-based ASIC specification","authors":"K. Mueller-Glaser, J. Bortolazzi","doi":"10.1109/CICC.1989.56788","DOIUrl":"https://doi.org/10.1109/CICC.1989.56788","url":null,"abstract":"An approach is described for knowledge-based acquisition and checking of system-specification data using frames and rules. Beside the functional description, electrical, timing, environmental, and test-oriented specification data is captured. The representation of a complete specification in a frame knowledge base provides support and control of essential design and verification steps","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115535514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 0.5 μm BiCMOS channelless gate array 一种0.5 μ m的BiCMOS无通道门阵列
Pub Date : 1989-05-15 DOI: 10.1109/CICC.1989.56718
F. Murabayashi, Y. Nishio, H. Maejima, A. Watanabe, S. Shukuri, T. Nishida, K. Shimohigashi
A BiCMOS channelless gate array using 0.5-μm BiCMOS technology is described. To improve the speed and density of the gate array, a novel feedback-type BiCMOS circuit and the channelless architecture were adopted. The plane-type gate array has 54 K cells and can construct a three-input NAND or NOR gate using one of them. The array realizes the high utilization ratio of basic cells using a four-metal-layer wiring technique. If macrocells are used, the density of the chip becomes more than twice that of a plane-type gate array. The gate delay time of 220 ps was simulated using a feedback-type BiCMOS two-input NAND circuit and 0.5-μm BiCMOS devices with a 4-V power supply. This high-performance BiCMOS channelless gate array can be applied to high-speed computers
介绍了一种采用0.5 μm BiCMOS技术的BiCMOS无通道门阵列。为了提高门阵列的速度和密度,采用了一种新型反馈型BiCMOS电路和无信道结构。平面型门阵列具有54个K单元,并且可以使用其中一个单元构建三输入NAND或NOR门。该阵列采用四金属层布线技术,实现了基本单元的高利用率。如果使用宏单元,芯片的密度将是平面型栅极阵列的两倍以上。采用反馈型BiCMOS双输入NAND电路和0.5 μm BiCMOS器件,采用4v电源,模拟了220 ps的栅极延迟时间。这种高性能的BiCMOS无通道门阵列可以应用于高速计算机
{"title":"A 0.5 μm BiCMOS channelless gate array","authors":"F. Murabayashi, Y. Nishio, H. Maejima, A. Watanabe, S. Shukuri, T. Nishida, K. Shimohigashi","doi":"10.1109/CICC.1989.56718","DOIUrl":"https://doi.org/10.1109/CICC.1989.56718","url":null,"abstract":"A BiCMOS channelless gate array using 0.5-μm BiCMOS technology is described. To improve the speed and density of the gate array, a novel feedback-type BiCMOS circuit and the channelless architecture were adopted. The plane-type gate array has 54 K cells and can construct a three-input NAND or NOR gate using one of them. The array realizes the high utilization ratio of basic cells using a four-metal-layer wiring technique. If macrocells are used, the density of the chip becomes more than twice that of a plane-type gate array. The gate delay time of 220 ps was simulated using a feedback-type BiCMOS two-input NAND circuit and 0.5-μm BiCMOS devices with a 4-V power supply. This high-performance BiCMOS channelless gate array can be applied to high-speed computers","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115189382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 10-bit high speed CMOS CAS macrocell 一个10位高速CMOS CAS宏单元
Pub Date : 1989-05-15 DOI: 10.1109/CICC.1989.56703
A. W. Vogt, I. Dedic
A 10-bit 50 M-sample/s digital-to-analog converter has been fabricated in a 3-μm, double-metal, single-polysilicon CMOS process. The architecture of the converter was chosen to minimize the effects of chip gradients, mismatches and transistor parameters, voltage drops in supply tracks, and other nonideal effects. Close attention was paid to the dynamic behavior of the converter to reduce output glitches and code-dependent distortion
采用3 μm双金属单多晶硅CMOS工艺制备了10位50 m采样/s数模转换器。转换器的结构选择是为了最小化芯片梯度、错配和晶体管参数、电源轨道电压降和其他非理想效应的影响。密切关注转换器的动态行为,以减少输出小故障和码相关失真
{"title":"A 10-bit high speed CMOS CAS macrocell","authors":"A. W. Vogt, I. Dedic","doi":"10.1109/CICC.1989.56703","DOIUrl":"https://doi.org/10.1109/CICC.1989.56703","url":null,"abstract":"A 10-bit 50 M-sample/s digital-to-analog converter has been fabricated in a 3-μm, double-metal, single-polysilicon CMOS process. The architecture of the converter was chosen to minimize the effects of chip gradients, mismatches and transistor parameters, voltage drops in supply tracks, and other nonideal effects. Close attention was paid to the dynamic behavior of the converter to reduce output glitches and code-dependent distortion","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114690560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A codec with on-chip digital echo canceller 带有片上数字回波消除器的编解码器
Pub Date : 1989-05-15 DOI: 10.1109/CICC.1989.56770
V. Friedman, J. Khoury, L. J. Loporcaro, M. Theobald, E. Fields, M. Tompsett, V. Gopal, G. L. Lustro, M. Figueroa
A 1.5-μm CMOS codec, using Σ-Δ conversion techniques, which incorporates the hybrid echo cancellation on chip, is described. The echo cancellation is done in two states, using an analog hybrid to reduce the echo level at the input of the A/D converter and a programmable digital balance filter. The limiting effects of the variation of the analog components on the echo cancellation performance of the device are minimized, so that only one set of coefficients per national standard is necessary
描述了一种采用Σ-Δ转换技术的1.5 μm CMOS编解码器,该编解码器集成了片上混合回波抵消技术。回波消除在两种状态下完成,使用模拟混合电路来降低A/D转换器输入端的回波电平和可编程数字平衡滤波器。模拟分量的变化对设备回波消除性能的限制影响被最小化,因此每个国家标准只需要一组系数
{"title":"A codec with on-chip digital echo canceller","authors":"V. Friedman, J. Khoury, L. J. Loporcaro, M. Theobald, E. Fields, M. Tompsett, V. Gopal, G. L. Lustro, M. Figueroa","doi":"10.1109/CICC.1989.56770","DOIUrl":"https://doi.org/10.1109/CICC.1989.56770","url":null,"abstract":"A 1.5-μm CMOS codec, using Σ-Δ conversion techniques, which incorporates the hybrid echo cancellation on chip, is described. The echo cancellation is done in two states, using an analog hybrid to reduce the echo level at the input of the A/D converter and a programmable digital balance filter. The limiting effects of the variation of the analog components on the echo cancellation performance of the device are minimized, so that only one set of coefficients per national standard is necessary","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127203409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Detecting stuck-open faults with stuck-at test sets 用卡在测试集检测卡开故障
Pub Date : 1989-05-15 DOI: 10.1109/CICC.1989.56809
S. Millman, E. McCluskey
Simulations of CMOS combinational circuits have been conducted to determine the relationship between stuck-at and stuck-open fault coverage. The results suggest that node activity is more important to stuck-open fault coverage than test length by itself. Reordering test sets so that node activity is increased resulted in increased stuck-open fault coverage. It is important to note that the reordering of the test sets requires an analysis of fault-free simulations; no fault simulations need to be done. It has been shown that all but some minimum-length test sets can easily achieve the 75% stuck-open fault coverage required by the DoD (US Department of Defense), and pseudorandom tests, which have high measures of node activity, can be expected to have over 90% stuck-open fault coverage
对CMOS组合电路进行了仿真,以确定卡断和卡开故障覆盖率之间的关系。结果表明,节点活动性比测试长度本身对卡断故障覆盖率的影响更大。重新排序测试集,以便增加节点活动,从而增加卡开故障覆盖率。值得注意的是,测试集的重新排序需要对无故障模拟进行分析;不需要进行故障模拟。研究表明,除了一些最小长度的测试集之外,所有测试集都可以很容易地达到DoD(美国国防部)要求的75%的卡开故障覆盖率,而具有高节点活动度量的伪随机测试可以期望具有超过90%的卡开故障覆盖率
{"title":"Detecting stuck-open faults with stuck-at test sets","authors":"S. Millman, E. McCluskey","doi":"10.1109/CICC.1989.56809","DOIUrl":"https://doi.org/10.1109/CICC.1989.56809","url":null,"abstract":"Simulations of CMOS combinational circuits have been conducted to determine the relationship between stuck-at and stuck-open fault coverage. The results suggest that node activity is more important to stuck-open fault coverage than test length by itself. Reordering test sets so that node activity is increased resulted in increased stuck-open fault coverage. It is important to note that the reordering of the test sets requires an analysis of fault-free simulations; no fault simulations need to be done. It has been shown that all but some minimum-length test sets can easily achieve the 75% stuck-open fault coverage required by the DoD (US Department of Defense), and pseudorandom tests, which have high measures of node activity, can be expected to have over 90% stuck-open fault coverage","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127060635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
期刊
1989 Proceedings of the IEEE Custom Integrated Circuits Conference
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