Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409778
G. Fiori, G. Iannaccone
In this work, we discuss the prospects of two-dimensional materials (2DMs) for electronic applications, investigated through multi-scale simulations. Our aim is to assess the ultimate achievable performance of 2DMs in a wide range of applications, such as digital and analog in high-performance transistors, or as transparent electrode in opto-electronics devices.
{"title":"The challenging promise of 2D materials for electronics","authors":"G. Fiori, G. Iannaccone","doi":"10.1109/IEDM.2015.7409778","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409778","url":null,"abstract":"In this work, we discuss the prospects of two-dimensional materials (2DMs) for electronic applications, investigated through multi-scale simulations. Our aim is to assess the ultimate achievable performance of 2DMs in a wide range of applications, such as digital and analog in high-performance transistors, or as transparent electrode in opto-electronics devices.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134153255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409614
N. Banno, M. Tada, K. Okamoto, N. Iguchi, T. Sakamoto, M. Miyamura, Y. Tsuji, H. Hada, H. Ochi, H. Onodera, M. Hashimoto, T. Sugibayashi
A nonvolatile and compact switch realizing multiple fan-outs of a crossbar switch for programmable logic devices (PLDs) has been newly developed by using two-varistors selected complementary atom switch (2V-1CAS). The two control lines connected to the varistors realize the accurate programming of each cross-point without select transistors. The novel nitrogen-modulated, TiN/a-Si/SiN/a-Si/TiN varistor shows superior nonlinear (NL) characteristic of ~105, which are successfully stacked on the top of CAS with dual-hard mask (DHM) process. The developed 2V-1CAS (18F2) gives a promising switch block (SB) used for energy-efficient, nonvolatile PLDs.
{"title":"A novel two-varistors (a-Si/SiN/a-Si) selected complementary atom switch (2V-1CAS) for nonvolatile crossbar switch with multiple fan-outs","authors":"N. Banno, M. Tada, K. Okamoto, N. Iguchi, T. Sakamoto, M. Miyamura, Y. Tsuji, H. Hada, H. Ochi, H. Onodera, M. Hashimoto, T. Sugibayashi","doi":"10.1109/IEDM.2015.7409614","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409614","url":null,"abstract":"A nonvolatile and compact switch realizing multiple fan-outs of a crossbar switch for programmable logic devices (PLDs) has been newly developed by using two-varistors selected complementary atom switch (2V-1CAS). The two control lines connected to the varistors realize the accurate programming of each cross-point without select transistors. The novel nitrogen-modulated, TiN/a-Si/SiN/a-Si/TiN varistor shows superior nonlinear (NL) characteristic of ~105, which are successfully stacked on the top of CAS with dual-hard mask (DHM) process. The developed 2V-1CAS (18F2) gives a promising switch block (SB) used for energy-efficient, nonvolatile PLDs.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124283642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409800
T. Sakai, H. Seo, T. Takagi, M. Kubota, H. Ohtake, M. Furuta
A color image sensor with three stacked organic photoconductive films (OPFs) and transparent readout circuits for a high-resolution, high-sensitivity, compact color video camera is described. The sensor separates and simultaneously detects the three primary colors. We fabricated test image sensors and confirmed the feasibility of the color video camera with three stacked OPFs.
{"title":"Color image sensor with organic photoconductive films","authors":"T. Sakai, H. Seo, T. Takagi, M. Kubota, H. Ohtake, M. Furuta","doi":"10.1109/IEDM.2015.7409800","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409800","url":null,"abstract":"A color image sensor with three stacked organic photoconductive films (OPFs) and transparent readout circuits for a high-resolution, high-sensitivity, compact color video camera is described. The sensor separates and simultaneously detects the three primary colors. We fabricated test image sensors and confirmed the feasibility of the color video camera with three stacked OPFs.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134560218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409618
K. Parat, C. Dennison
NAND Flash has followed Moore's law of scaling for several generations. With the minimum half-pitch going below 20nm, transition to a 3D NAND cell is required to continue the scaling. This paper describes a floating gate based 3D NAND technology with superior cell characteristics relative to 2D NAND, and CMOS under array for high Gb/mm2 density.
{"title":"A floating gate based 3D NAND technology with CMOS under array","authors":"K. Parat, C. Dennison","doi":"10.1109/IEDM.2015.7409618","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409618","url":null,"abstract":"NAND Flash has followed Moore's law of scaling for several generations. With the minimum half-pitch going below 20nm, transition to a 3D NAND cell is required to continue the scaling. This paper describes a floating gate based 3D NAND technology with superior cell characteristics relative to 2D NAND, and CMOS under array for high Gb/mm2 density.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"34 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132540153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409673
K. Nii, M. Yabuuchi, Yoshisato Yokoyama, Y. Ishii, T. Okagaki, M. Morimoto, Y. Tsukamoto, Koji Tanaka, Miki Tanaka, S. Tanaka
We examine appropriate bitcell layouts for two read/write (2RW) 8T dual-port (DP) SRAM in advanced planar/FinFET technologies. 256-kbit 2RW DP SRAM macros with highly symmetrical 8T DP bitcell were designed and fabricated using 16 nm FinFET technology. The read/write assist with wordline overdrive reduces Vmln by 120 mV, achieving successful operation at below 0.5 V.
{"title":"2RW dual-port SRAM design challenges in advanced technology nodes","authors":"K. Nii, M. Yabuuchi, Yoshisato Yokoyama, Y. Ishii, T. Okagaki, M. Morimoto, Y. Tsukamoto, Koji Tanaka, Miki Tanaka, S. Tanaka","doi":"10.1109/IEDM.2015.7409673","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409673","url":null,"abstract":"We examine appropriate bitcell layouts for two read/write (2RW) 8T dual-port (DP) SRAM in advanced planar/FinFET technologies. 256-kbit 2RW DP SRAM macros with highly symmetrical 8T DP bitcell were designed and fabricated using 16 nm FinFET technology. The read/write assist with wordline overdrive reduces Vmln by 120 mV, achieving successful operation at below 0.5 V.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117314408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409652
K. Lee, C. Nagai, J. Bea, T. Fukushima, R. Suresh, X. Wu, T. Tanaka, M. Koyanagi
In order to solve the critical issues of current standard chip-to-wafer (C2W)/wafer-to-wafer (W2W) hybrid bonding technologies, we propose novel reconfigured wafer-to-wafer (W2W) hybrid bonding technology using three types of scaled tiny electrodes with slightly extruded structure and unique adhesive layers for ultra-high density 2.5D/3D integration applications. Especially, we developed a high stacking yield hybrid bonding technology using unique anisotropic conductive film composed of ultra-high density nano-Cu filaments for exascale 2.5D/3D integration. Multi numbers of TEG die with 7mm × 23mm size are simultaneously aligned with high accuracy around 1um by chip self-assembly method and thermal-compression bonding in wafer-level. Totally 3,898,000 of 4,309,200 electrodes with 3um diameter/6um pitch in each TEG chip are well intact-bonded by new hybrid bonding technology using ultra-high density nano-Cu filaments which gives rise to the joining yield of 90%.
{"title":"Novel reconfigured wafer-to-wafer (W2W) hybrid bonding technology using ultra-high density nano-Cu filaments for exascale 2.5D/3D integration","authors":"K. Lee, C. Nagai, J. Bea, T. Fukushima, R. Suresh, X. Wu, T. Tanaka, M. Koyanagi","doi":"10.1109/IEDM.2015.7409652","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409652","url":null,"abstract":"In order to solve the critical issues of current standard chip-to-wafer (C2W)/wafer-to-wafer (W2W) hybrid bonding technologies, we propose novel reconfigured wafer-to-wafer (W2W) hybrid bonding technology using three types of scaled tiny electrodes with slightly extruded structure and unique adhesive layers for ultra-high density 2.5D/3D integration applications. Especially, we developed a high stacking yield hybrid bonding technology using unique anisotropic conductive film composed of ultra-high density nano-Cu filaments for exascale 2.5D/3D integration. Multi numbers of TEG die with 7mm × 23mm size are simultaneously aligned with high accuracy around 1um by chip self-assembly method and thermal-compression bonding in wafer-level. Totally 3,898,000 of 4,309,200 electrodes with 3um diameter/6um pitch in each TEG chip are well intact-bonded by new hybrid bonding technology using ultra-high density nano-Cu filaments which gives rise to the joining yield of 90%.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115140586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409686
T. Cusati, G. Fiori, A. Gahoi, V. Passi, A. Fortunelli, M. Lemme, G. Iannaccone
In this paper we propose a theoretical and experimental study of the nature of metal-graphene contacts. We use ab-initio simulations and semi-analytical modeling to derive and validate a simple two-parameter model of metal-graphene contacts. Such findings are supported by experimental results for large samples of different types of metal-graphene contacts.
{"title":"Understanding the nature of metal-graphene contacts: A theoretical and experimental study","authors":"T. Cusati, G. Fiori, A. Gahoi, V. Passi, A. Fortunelli, M. Lemme, G. Iannaccone","doi":"10.1109/IEDM.2015.7409686","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409686","url":null,"abstract":"In this paper we propose a theoretical and experimental study of the nature of metal-graphene contacts. We use ab-initio simulations and semi-analytical modeling to derive and validate a simple two-parameter model of metal-graphene contacts. Such findings are supported by experimental results for large samples of different types of metal-graphene contacts.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116042907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409704
K. Goh, K. Tan, S. Yadav, Annie, S. Yoon, G. Liang, X. Gong, Y. Yeo
We report the first demonstration of a novel vertically stacked structure comprising InAs nanowires and GaSb nanowires, enabled by an extremely-thin (sub-150 nm) III-V buffer technology on a Si platform. This led to the realization of InAs n-FETs and GaSb p-FETs based on the stacked InAs or GaSb nanowires (NWs), respectively, employing multiple common modules such as gate stack and contact processes. Decent transfer characteristics with SS of 126 mV/decade and DIBL of 285 mV/V were obtained for the InAs n-FET with a channel length LCH of 20 nm. For the vertically stacked GaSb NW p-FET (LCH of 500 nm), the lowest reported SS of 188 mV/decade and highest ION/IOFF ratio of 3.5 orders were achieved for III-V p-FETs on Si substrate.
{"title":"Gate-all-around CMOS (InAs n-FET and GaSb p-FET) based on vertically-stacked nanowires on a Si platform, enabled by extremely-thin buffer layer technology and common gate stack and contact modules","authors":"K. Goh, K. Tan, S. Yadav, Annie, S. Yoon, G. Liang, X. Gong, Y. Yeo","doi":"10.1109/IEDM.2015.7409704","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409704","url":null,"abstract":"We report the first demonstration of a novel vertically stacked structure comprising InAs nanowires and GaSb nanowires, enabled by an extremely-thin (sub-150 nm) III-V buffer technology on a Si platform. This led to the realization of InAs n-FETs and GaSb p-FETs based on the stacked InAs or GaSb nanowires (NWs), respectively, employing multiple common modules such as gate stack and contact processes. Decent transfer characteristics with SS of 126 mV/decade and DIBL of 285 mV/V were obtained for the InAs n-FET with a channel length LCH of 20 nm. For the vertically stacked GaSb NW p-FET (LCH of 500 nm), the lowest reported SS of 188 mV/decade and highest ION/IOFF ratio of 3.5 orders were achieved for III-V p-FETs on Si substrate.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116552316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409803
C. Scott, A. Parsafar, A. El-Falou, P. Levine, K. Karim
We demonstrate measured X-ray dose efficiency results from a 5.6-μm × 6.25-μm pixel-pitch direct-conversion amorphous selenium/CMOS hybrid X-ray imager. Compared to existing scintillator-based imagers, our approach enables up to 100× gains in DQE at spatial frequencies of 20-60 cycles/mm, which could radically accelerate bioengineering research. The measured MTF is 50% at 32 cycles/mm, corresponding to a 16-μm effective object size. We also demonstrate a MTF model which confirms experimental results with an RMS error of 0.02.
{"title":"High dose efficiency, ultra-high resolution amorphous selenium/CMOS hybrid digital X-ray imager","authors":"C. Scott, A. Parsafar, A. El-Falou, P. Levine, K. Karim","doi":"10.1109/IEDM.2015.7409803","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409803","url":null,"abstract":"We demonstrate measured X-ray dose efficiency results from a 5.6-μm × 6.25-μm pixel-pitch direct-conversion amorphous selenium/CMOS hybrid X-ray imager. Compared to existing scintillator-based imagers, our approach enables up to 100× gains in DQE at spatial frequencies of 20-60 cycles/mm, which could radically accelerate bioengineering research. The measured MTF is 50% at 32 cycles/mm, corresponding to a 16-μm effective object size. We also demonstrate a MTF model which confirms experimental results with an RMS error of 0.02.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"58 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115317856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409698
Cimang Lu, A. Toriumi
This paper reports a gate dielectric film design for reliability-aware as well as scalability conscious gate stacks on Ge. Initially good characteristics of Ge gate stacks do not necessarily guarantee the long-term device reliability. To overcome this big hurdle, we propose a novel concept of the rigidity control in the dielectric films with continuous random network. Ge gate stacks with initially prominent passivation and long term reliability are demonstrated experimentally. This is a new view for achieving the built-in design of gate dielectric film with reliability as well as scalability.
{"title":"Structural coordination of rigidity with flexibility in gate dielectric films for sub-nm EOT Ge gate stack reliability","authors":"Cimang Lu, A. Toriumi","doi":"10.1109/IEDM.2015.7409698","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409698","url":null,"abstract":"This paper reports a gate dielectric film design for reliability-aware as well as scalability conscious gate stacks on Ge. Initially good characteristics of Ge gate stacks do not necessarily guarantee the long-term device reliability. To overcome this big hurdle, we propose a novel concept of the rigidity control in the dielectric films with continuous random network. Ge gate stacks with initially prominent passivation and long term reliability are demonstrated experimentally. This is a new view for achieving the built-in design of gate dielectric film with reliability as well as scalability.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"239 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121145935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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