Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409778
G. Fiori, G. Iannaccone
In this work, we discuss the prospects of two-dimensional materials (2DMs) for electronic applications, investigated through multi-scale simulations. Our aim is to assess the ultimate achievable performance of 2DMs in a wide range of applications, such as digital and analog in high-performance transistors, or as transparent electrode in opto-electronics devices.
{"title":"The challenging promise of 2D materials for electronics","authors":"G. Fiori, G. Iannaccone","doi":"10.1109/IEDM.2015.7409778","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409778","url":null,"abstract":"In this work, we discuss the prospects of two-dimensional materials (2DMs) for electronic applications, investigated through multi-scale simulations. Our aim is to assess the ultimate achievable performance of 2DMs in a wide range of applications, such as digital and analog in high-performance transistors, or as transparent electrode in opto-electronics devices.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134153255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409737
Charlotte W. M. Harrison, I. Horne, M. Banach
OTFTs are fundamentally the most flexible transistor technology available, offering a route to truly flexible electronic devices. OTFTs have shown substantial improvements in performance over the past 25 years with further improvements still to come. FlexEnable has demonstrated flexible, full colour OLCDs build on ultra-low cost TAC substrates. FlexEnable has shown that their OTFTs can exceed the performance of a-Si and show good performance under reliability testing.
{"title":"Organic thin film transistors for flexible electronics","authors":"Charlotte W. M. Harrison, I. Horne, M. Banach","doi":"10.1109/IEDM.2015.7409737","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409737","url":null,"abstract":"OTFTs are fundamentally the most flexible transistor technology available, offering a route to truly flexible electronic devices. OTFTs have shown substantial improvements in performance over the past 25 years with further improvements still to come. FlexEnable has demonstrated flexible, full colour OLCDs build on ultra-low cost TAC substrates. FlexEnable has shown that their OTFTs can exceed the performance of a-Si and show good performance under reliability testing.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114411118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409673
K. Nii, M. Yabuuchi, Yoshisato Yokoyama, Y. Ishii, T. Okagaki, M. Morimoto, Y. Tsukamoto, Koji Tanaka, Miki Tanaka, S. Tanaka
We examine appropriate bitcell layouts for two read/write (2RW) 8T dual-port (DP) SRAM in advanced planar/FinFET technologies. 256-kbit 2RW DP SRAM macros with highly symmetrical 8T DP bitcell were designed and fabricated using 16 nm FinFET technology. The read/write assist with wordline overdrive reduces Vmln by 120 mV, achieving successful operation at below 0.5 V.
{"title":"2RW dual-port SRAM design challenges in advanced technology nodes","authors":"K. Nii, M. Yabuuchi, Yoshisato Yokoyama, Y. Ishii, T. Okagaki, M. Morimoto, Y. Tsukamoto, Koji Tanaka, Miki Tanaka, S. Tanaka","doi":"10.1109/IEDM.2015.7409673","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409673","url":null,"abstract":"We examine appropriate bitcell layouts for two read/write (2RW) 8T dual-port (DP) SRAM in advanced planar/FinFET technologies. 256-kbit 2RW DP SRAM macros with highly symmetrical 8T DP bitcell were designed and fabricated using 16 nm FinFET technology. The read/write assist with wordline overdrive reduces Vmln by 120 mV, achieving successful operation at below 0.5 V.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117314408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409652
K. Lee, C. Nagai, J. Bea, T. Fukushima, R. Suresh, X. Wu, T. Tanaka, M. Koyanagi
In order to solve the critical issues of current standard chip-to-wafer (C2W)/wafer-to-wafer (W2W) hybrid bonding technologies, we propose novel reconfigured wafer-to-wafer (W2W) hybrid bonding technology using three types of scaled tiny electrodes with slightly extruded structure and unique adhesive layers for ultra-high density 2.5D/3D integration applications. Especially, we developed a high stacking yield hybrid bonding technology using unique anisotropic conductive film composed of ultra-high density nano-Cu filaments for exascale 2.5D/3D integration. Multi numbers of TEG die with 7mm × 23mm size are simultaneously aligned with high accuracy around 1um by chip self-assembly method and thermal-compression bonding in wafer-level. Totally 3,898,000 of 4,309,200 electrodes with 3um diameter/6um pitch in each TEG chip are well intact-bonded by new hybrid bonding technology using ultra-high density nano-Cu filaments which gives rise to the joining yield of 90%.
{"title":"Novel reconfigured wafer-to-wafer (W2W) hybrid bonding technology using ultra-high density nano-Cu filaments for exascale 2.5D/3D integration","authors":"K. Lee, C. Nagai, J. Bea, T. Fukushima, R. Suresh, X. Wu, T. Tanaka, M. Koyanagi","doi":"10.1109/IEDM.2015.7409652","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409652","url":null,"abstract":"In order to solve the critical issues of current standard chip-to-wafer (C2W)/wafer-to-wafer (W2W) hybrid bonding technologies, we propose novel reconfigured wafer-to-wafer (W2W) hybrid bonding technology using three types of scaled tiny electrodes with slightly extruded structure and unique adhesive layers for ultra-high density 2.5D/3D integration applications. Especially, we developed a high stacking yield hybrid bonding technology using unique anisotropic conductive film composed of ultra-high density nano-Cu filaments for exascale 2.5D/3D integration. Multi numbers of TEG die with 7mm × 23mm size are simultaneously aligned with high accuracy around 1um by chip self-assembly method and thermal-compression bonding in wafer-level. Totally 3,898,000 of 4,309,200 electrodes with 3um diameter/6um pitch in each TEG chip are well intact-bonded by new hybrid bonding technology using ultra-high density nano-Cu filaments which gives rise to the joining yield of 90%.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115140586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409803
C. Scott, A. Parsafar, A. El-Falou, P. Levine, K. Karim
We demonstrate measured X-ray dose efficiency results from a 5.6-μm × 6.25-μm pixel-pitch direct-conversion amorphous selenium/CMOS hybrid X-ray imager. Compared to existing scintillator-based imagers, our approach enables up to 100× gains in DQE at spatial frequencies of 20-60 cycles/mm, which could radically accelerate bioengineering research. The measured MTF is 50% at 32 cycles/mm, corresponding to a 16-μm effective object size. We also demonstrate a MTF model which confirms experimental results with an RMS error of 0.02.
{"title":"High dose efficiency, ultra-high resolution amorphous selenium/CMOS hybrid digital X-ray imager","authors":"C. Scott, A. Parsafar, A. El-Falou, P. Levine, K. Karim","doi":"10.1109/IEDM.2015.7409803","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409803","url":null,"abstract":"We demonstrate measured X-ray dose efficiency results from a 5.6-μm × 6.25-μm pixel-pitch direct-conversion amorphous selenium/CMOS hybrid X-ray imager. Compared to existing scintillator-based imagers, our approach enables up to 100× gains in DQE at spatial frequencies of 20-60 cycles/mm, which could radically accelerate bioengineering research. The measured MTF is 50% at 32 cycles/mm, corresponding to a 16-μm effective object size. We also demonstrate a MTF model which confirms experimental results with an RMS error of 0.02.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"58 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115317856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409708
T. Kachi
Recent progress and developing issues of GaN vertical power devices are reviewed. Quality improvement of GaN substrates activates the research. 2kV level pn diodes and 1.5kV level vertical transistors have been reported recently. However, some issues to be solved still exist to show high ability of GaN.
{"title":"State-of-the-art GaN vertical power devices","authors":"T. Kachi","doi":"10.1109/IEDM.2015.7409708","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409708","url":null,"abstract":"Recent progress and developing issues of GaN vertical power devices are reviewed. Quality improvement of GaN substrates activates the research. 2kV level pn diodes and 1.5kV level vertical transistors have been reported recently. However, some issues to be solved still exist to show high ability of GaN.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124444839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409735
S. Jacob, M. Benwadih, J. Bablet, M. Charbonneau, A. Aliane, A. Plihon, A. Revaux
Organic Large Area Electronics (OLAE) has been identified as a key enabling technology for smart sensing. Moreover, printed electronics brings the flexibility to fulfill these applications. In this paper, the last major results on different printed interfacing Organic Thin Film Transistors (OTFTs) circuits and sensors are presented. An OTFT addressing matrix and organic photodiodes (OPDs) have been integrated in a common process to achieve an image sensor on a flexible plastic substrate.
{"title":"Large area sensing surfaces: Flexible organic printed interfacing circuits and sensors","authors":"S. Jacob, M. Benwadih, J. Bablet, M. Charbonneau, A. Aliane, A. Plihon, A. Revaux","doi":"10.1109/IEDM.2015.7409735","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409735","url":null,"abstract":"Organic Large Area Electronics (OLAE) has been identified as a key enabling technology for smart sensing. Moreover, printed electronics brings the flexibility to fulfill these applications. In this paper, the last major results on different printed interfacing Organic Thin Film Transistors (OTFTs) circuits and sensors are presented. An OTFT addressing matrix and organic photodiodes (OPDs) have been integrated in a common process to achieve an image sensor on a flexible plastic substrate.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124482990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409614
N. Banno, M. Tada, K. Okamoto, N. Iguchi, T. Sakamoto, M. Miyamura, Y. Tsuji, H. Hada, H. Ochi, H. Onodera, M. Hashimoto, T. Sugibayashi
A nonvolatile and compact switch realizing multiple fan-outs of a crossbar switch for programmable logic devices (PLDs) has been newly developed by using two-varistors selected complementary atom switch (2V-1CAS). The two control lines connected to the varistors realize the accurate programming of each cross-point without select transistors. The novel nitrogen-modulated, TiN/a-Si/SiN/a-Si/TiN varistor shows superior nonlinear (NL) characteristic of ~105, which are successfully stacked on the top of CAS with dual-hard mask (DHM) process. The developed 2V-1CAS (18F2) gives a promising switch block (SB) used for energy-efficient, nonvolatile PLDs.
{"title":"A novel two-varistors (a-Si/SiN/a-Si) selected complementary atom switch (2V-1CAS) for nonvolatile crossbar switch with multiple fan-outs","authors":"N. Banno, M. Tada, K. Okamoto, N. Iguchi, T. Sakamoto, M. Miyamura, Y. Tsuji, H. Hada, H. Ochi, H. Onodera, M. Hashimoto, T. Sugibayashi","doi":"10.1109/IEDM.2015.7409614","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409614","url":null,"abstract":"A nonvolatile and compact switch realizing multiple fan-outs of a crossbar switch for programmable logic devices (PLDs) has been newly developed by using two-varistors selected complementary atom switch (2V-1CAS). The two control lines connected to the varistors realize the accurate programming of each cross-point without select transistors. The novel nitrogen-modulated, TiN/a-Si/SiN/a-Si/TiN varistor shows superior nonlinear (NL) characteristic of ~105, which are successfully stacked on the top of CAS with dual-hard mask (DHM) process. The developed 2V-1CAS (18F2) gives a promising switch block (SB) used for energy-efficient, nonvolatile PLDs.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124283642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409650
Z. Wei, K. Eriguchi, S. Muraoka, K. Katayama, R. Yasuhara, K. Kawai, Y. Ikeda, M. Yoshimura, Y. Hayakawa, K. Shimakawa, T. Mikawa, S. Yoneda
A physical analytic formula based on Stochastic Differential Equation was successfully developed to describe intrinsic ReRAM variation. The formula was proved useful for projecting scaled ReRAM memory window and resistance distribution after long-term retention, verified by testing 40 nm 2-Mbit ReRAM. The formula also centered on practical and quantitative filament characterization.
{"title":"Distribution projecting the reliability for 40 nm ReRAM and beyond based on stochastic differential equation","authors":"Z. Wei, K. Eriguchi, S. Muraoka, K. Katayama, R. Yasuhara, K. Kawai, Y. Ikeda, M. Yoshimura, Y. Hayakawa, K. Shimakawa, T. Mikawa, S. Yoneda","doi":"10.1109/IEDM.2015.7409650","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409650","url":null,"abstract":"A physical analytic formula based on Stochastic Differential Equation was successfully developed to describe intrinsic ReRAM variation. The formula was proved useful for projecting scaled ReRAM memory window and resistance distribution after long-term retention, verified by testing 40 nm 2-Mbit ReRAM. The formula also centered on practical and quantitative filament characterization.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128634249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-01DOI: 10.1109/IEDM.2015.7409686
T. Cusati, G. Fiori, A. Gahoi, V. Passi, A. Fortunelli, M. Lemme, G. Iannaccone
In this paper we propose a theoretical and experimental study of the nature of metal-graphene contacts. We use ab-initio simulations and semi-analytical modeling to derive and validate a simple two-parameter model of metal-graphene contacts. Such findings are supported by experimental results for large samples of different types of metal-graphene contacts.
{"title":"Understanding the nature of metal-graphene contacts: A theoretical and experimental study","authors":"T. Cusati, G. Fiori, A. Gahoi, V. Passi, A. Fortunelli, M. Lemme, G. Iannaccone","doi":"10.1109/IEDM.2015.7409686","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409686","url":null,"abstract":"In this paper we propose a theoretical and experimental study of the nature of metal-graphene contacts. We use ab-initio simulations and semi-analytical modeling to derive and validate a simple two-parameter model of metal-graphene contacts. Such findings are supported by experimental results for large samples of different types of metal-graphene contacts.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116042907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：